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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (Figure 15). Stairstep GeneratorA CLD is used to optimize the performance of a four-layer diode , breakdown voltage of the fourlayer diode. Another stairstep generator (Figure 17, page 144) uses bipolar , with a CLD and zener diode (Figure 10b). 141 Typical Applications (Continued) Collector , Applications Two-Step Battery ChargerA pair of CLDs, along with a zener diode, provides for an excellent , low voltage reference designed with a zener diode. A low noise capacitor across R will further ... | Original |
7 pages, |
Power supply AC to DC zener diode balancing resistors CCL0035 CCL0130 CCL0750 sawtooth wave generator noise diode noise diode generator Zener Diode high frequency applications SWITCHING TRANSISTOR 144 triangle wave application note Zener Diode B datasheet abstract |
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| Abstract: electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed ... | OCR Scan |
1 pages, |
D13V RA3A D13V3 D13V2 2N4988 2n4989 2N4985 2N4983 2N4991 2N4990 D13V1 2N4992 transistor 2N4983 four-layer diode datasheet abstract |
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| Abstract: , which include DIACs, SCRs, and TRIACs. All of these devices originate from the four-layer diode (also known as the Shockley diode). The four-layer diode is represented in figure 5 symbolically, and more , : 80053 Rev. 1.4, 06-May-08 18131 (a) (b) (c) (d) Fig. 4 - Four-Layer Diode (Shockley Diode) For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com 991 ... | Original |
7 pages, |
OPTOCOUPLER thyristor Optocoupler with triac PHOTO SCR OPTOCOUPLER photo thyristor microwave oven magnetron triac driver opto parallel triacs Thyristor Shockley magnetron tube Optocoupler with triac circuits four-layer diode optotriac IL4218 datasheet abstract |
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| Abstract: greater from a CMOS input clamp diode can cause four-layer diode action on the CMOS device This at best , overcome this problem the MM74C903 MM74C903 and MM74C904 MM74C904 have been designed with a clamp diode from inputs to VCC only This single diode provides adequate static discharge protection and at the same time allows voltages of up to b 17V on any input Since there is essentially no current without the diode both the , the conventional CMOS input diode clamp from input to ground poses problems The least of these is ... | Original |
2 pages, |
p-mos ttl four layer diode MM54C901 MM54C904 C1995 MM74C901 MM74C903 MM74C904 MM74C four-layer diode MM54C MM54C abstract |
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| Abstract: Currents of 5 mA or greater from a CMOS input clamp diode can cause four-layer diode action on the CMOS , normally can pull more negative than ground, the conventional CMOS input diode clamp from input to ground , clamped at one diode drop (-0.6V), all the current that flows comes from the PMOS negative supply. For , diode from inputs to VCC only. This single diode provides adequate static discharge protection and, at , without the diode, both the high power dissipation and latch up problems are eliminated. To demonstrate ... | Original |
4 pages, |
MM74C904 MM74C903 MM74C901 mm74c MM54C901 four-layer diode MM54C/MM74C MM54C901/ MM54C904/MM74C904 MM74C903/MM74C904 MM54C/MM74C abstract |
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| Abstract: those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical , threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and , "4-layer diode." SILICON BILATERAL SWITCH (SBS)-low voltage triac trigger, two silicon unilateral switches , (See Circuit 3) *This device is a symmetrical negative resistance diode. All electrical limits shown ... | OCR Scan |
6 pages, |
3N83 equivalent transistor of 2n6027 scs thyristor transistors equivalent 9012 2N602B 2n6116 SBS thyristor PUT 2N2646 low voltage scr 2N2646 Silicon unilateral switch 2N4983 2N4985 2N489-494 2N2646-47 2N489-494 abstract |
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| Abstract: those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical , threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and , "4-layer diode." SILICON BILATERAL SWITCH (SBS)-low voltage triac trigger, two silicon unilateral switches , diode. All electrical limits shown apply in either direction of current flow. Min. 6 Typ. ±.02 3.5 ... | OCR Scan |
6 pages, |
"Programmable Unijunction Transistor" 2N1671 2n2646 equivalent 2N2647 2N4983 2n4987 2N6027 2N602B SUS 2N4987 EQUIVALENT 2N1671 SBS thyristor 3n81 four-layer diode 2N489-494 2N2646-47 2N489-494 abstract |
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| Abstract: those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical , threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and , "4-layer diode." SILICON BILATERAL SWITCH (SBS)-low voltage triac trigger, two silicon unilateral switches , Pulse Amplitude (See Circuit 3) Vo 3.5 V *This device is a symmetrical negative resistance diode. Ail , the flow of gate current respectively. Electrical requirements of D1 and D2 are easily met. Any diode ... | OCR Scan |
6 pages, |
2n4987 2N2647 2N2646..47 2n2646 equivalent 2N2646 3N81 scr firing circuit ac regulator EQUIVALENT 2N1671 GE TRIAC SC40B low voltage scr SCR firing inverter circuit 2N4985 thyristor firing circuits 2N4991 2N489-494 2N2646-47 2N489-494 abstract |
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| Abstract: those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical , threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and , "4-layer diode." SILICON BILATERAL SWITCH (SBS)-low voltage triac trigger, two silicon unilateral switches , diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead ... | OCR Scan |
6 pages, |
GE SCR 1000 AMP 2N2646-47 iran 2N1671 SUS GE 2N4987 2N6027 2N2646 2N4989 2N4992 2N602B 2n6116 3n84 SCR 2N2646 EQUIVALENT 2N1671 2N489-494 2N2646-47 2N489-494 abstract |
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| Abstract: those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical , threshold and four-layer switch devices. Each of these devices can be used as a power thyristor trigger, and , "4-layer diode." SILICON BILATERAL SWITCH (SBS)-low voltage triac trigger, two silicon unilateral switches , approximating those of an "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C ... | OCR Scan |
6 pages, |
SUS-2N4989 2N1671 2N2646 2N2647 2N4983 2N4985 2n4987 2n4989 2N6027 2N602B four-layer diode equivalent 2n2646 3N83 EQUIVALENT 2N1671 2N4988 2N489-494 2N2646-47 2N489-494 abstract |
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| . As shown in Figure 15, the SCR is a four layer device, npnp from top to bottom (or cathode to anode control SCRs have tq ratings of several hundred ms. Like with the pn diode, as the temperature packages, and how to mount them. Most high power products (SCRs, and diodes in both discrete and module . Figure 22. Mounting Hockey Puk SCRs and Diodes Figure 23. Isolation System for Standard TO-220 www.datasheetarchive.com/files/international-rectifier/docs/wcd00009/wcd009b4.htm |
International Rectifier | 06/10/1998 | 15.65 Kb | HTM | wcd009b4.htm |
| . As shown in Figure 15, the SCR is a four layer device, npnp from top to bottom (or cathode to anode Product Line HEXFET Power MOSFETs Integrated Circuits IGBTs Diodes SCR Relays Pow IR train control SCRs have tq ratings of several hundred ms. Like with the pn diode, as the temperature packages, and how to mount them. Most high power products (SCRs, and diodes in both discrete and module and Diodes Basic Circuit Theory Basic Semiconductor Theory Device Cross Section www.datasheetarchive.com/files/international-rectifier/technical-info/guide/device.html |
International Rectifier | 24/07/2000 | 20.45 Kb | HTML | device.html |
| Package Thermal Resistance, Junction to Ambient - Four layer (2s2p) board, nat- ural convection RθMA 30 printed circuit board (Four layer [2s2p] board, natural con- vection). °C/W BGA Package Thermal Resistance values. The diode drop voltage is a function of current and varies approximately 0.4 to 0.8 volts over www.datasheetarchive.com/download/23307443-484153ZC/mpc555um.zip (appg.pdf) |
Motorola | 16/02/2000 | 5718.84 Kb | ZIP | mpc555um.zip |
| Da ta B oo k The Programmable Logic Data Book Click anywhere on this page to continue Success made simple 1996 On behalf of the employees of Xilinx, our sales representatives, our distributors, and our manufacturing partners, welcome to our 1996 Data Book, and thank you for your interest in Xilinx products and services. As the inventor of Field Programmable Gate Array technology and the world's leading supplier of programmable logic, we would like to pledge our continuing comm www.datasheetarchive.com/download/90212243-999460ZC/dbookold.zip (DBOOKOLD.PDF) |
Xilinx | 07/09/1996 | 10340.01 Kb | ZIP | dbookold.zip |