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four-layer diode

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Abstract: (Figure 15). Stairstep Generator­A CLD is used to optimize the performance of a four-layer diode , breakdown voltage of the fourlayer diode. Another stairstep generator (Figure 17, page 144) uses bipolar , with a CLD and zener diode (Figure 10b). 141 Typical Applications (Continued) Collector , Applications Two-Step Battery Charger­A pair of CLDs, along with a zener diode, provides for an excellent , low voltage reference designed with a zener diode. A low noise capacitor across R will further Central Semiconductor
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CCL0035 CCL0130 CCL0750 A CLIPPER CIRCUIT APPLICATIONS noise diode generator squarewave generator notes Zener Diode B triangle wave application note SWITCHING TRANSISTOR 144
Abstract: Figure 15. Di D2 Stairstep Generator-A CLD is used to optimize the per formance of a four-layer diode stairstep generator (Figure 16). The CLD allows the use of input pulses only a few volts above the breakdown voltage of the four-layer diode. Another stairstep generator (Figure 17, page 21) uses bipolar , zener diode (Figure 10b). 'c c 2 3 'c c OUT IN OUT I Figure 10. DC Coupling 151 , diode, provides for an excellent two-step battery charger, as shown in Figure 20. + V o-d3 o D o d -
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Abstract: Figure 15. Di D2 Stairstep Generator - A CLD is used to optimize the per formance of a four-layer diode stairstep generator (Figure 16). The CLD allows the use of input pulses only a few volts above the breakdown voltage of the four-layer diode. Another stairstep generator (Figure 17, page 21) uses bipolar , replacing the coupling resistors R2 and Ra with a CLD and zener diode (Figure 10b). v cc v cc Figure 10 , Two-Step Battery Charger - A pair of CLDs, along with a zener diode, provides for an excellent two-step -
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Abstract: Generator- A CLD is used to optimize the per formance of a four-layer diode stairstep generator (Figure 16 , four-layer diode. Another stairstep generator (Figure 17, page 21) uses bipolar transistors and a CLD. This , zener diode (Figure 10b). v cc v cc Figure 10. DC Coupling 151 Centrar Collector Load , Two-Step Battery Charger-A pair of CLDs, along with a zener diode, provides for an excellent two-step , zener diode. A low noise capacitor across R will further reduce noise. Figure 21. Low Voltage/Low -
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squarewave generator
Abstract: TRIACs. All of these devices originate from the four-layer diode (also known as the Shockley diode). The four-layer diode is represented in figure 5 symbolically, and more importantly, functionally , -May-08 18131 (a) (b) (c) (d) Fig. 4 - Four-Layer Diode (Shockley Diode) For technical questions Vishay Semiconductors
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shockley diode opto triac shockley diode application diode shockley optotriac shockley H11C5 H11C4 H11C6 IL400 TLP560G
Abstract: electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed -
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D13V1 D13V3 2N4988 2N4990 2N4983 2N4985 transistor 2N4983 2N4992 2N4991 D13V2 B13V4 2N4989
Abstract: . Currents of 5 mA or greater from a CMOS input clamp diode can cause four-layer diode action on the CMOS , normally can pull more negative than ground, the conventional CMOS input diode clamp from input to ground , clamped at one diode drop (-0.6V), all the current that flows comes from the PMOS negative supply. For , diode from inputs to VCC only. This single diode provides adequate static discharge protection and, at , without the diode, both the high power dissipation and latch up problems are eliminated. To demonstrate Fairchild Semiconductor
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MM74C901 MM74C903 MM74C904 four layer diode mm74c MM54C901 MM54C/MM74C MM54C901/ MM54C904/MM74C904
Abstract: greater from a CMOS input clamp diode can cause four-layer diode action on the CMOS device This at best , overcome this problem the MM74C903 and MM74C904 have been designed with a clamp diode from inputs to VCC only This single diode provides adequate static discharge protection and at the same time allows voltages of up to b 17V on any input Since there is essentially no current without the diode both the , the conventional CMOS input diode clamp from input to ground poses problems The least of these is National Semiconductor
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MM54C904 MB-18 C1995 p-mos ttl MM54C
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , symmetrical negative resistance diode. All electrical limits shown apply in either direction of current flow -
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2N2646 2n2646 equivalent 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 THYRISTOR A2f 2N489-494 2N2646-47 2N489-94 2N1671 2H21S0
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , Circuit 2) Turn-off Time (See Circuit 3) *This device is a symmetrical negative resistance diode. All -
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triac phase control EQUIVALENT 2N1671 2N602B SBS thyristor 3n84 2N4987 2N2647 2N6027 2N602 INI4993
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead -
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2N4986 general electric C22B CIRCUITS BY USING 2N6027 GE C22B scs thyristor ge motor capacitor cross reference S-2N4983 2N4963
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , approximating those of an "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C -
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SUS-2N4989 20 amp 800 volt triac 3N81 D5K2 9019 transistor 3N85 047/1F GEC32U J2N2647
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , a symmetrical negative resistance diode. Ail electrical limits shown apply in either direction of , the flow of gate current respectively. Electrical requirements of D1 and D2 are easily met. Any diode , of the SBS. The General Electric 6RS5GC1UAJ1 (common cathode) dual diode makes an excellent choice -
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SC40B GE TRIAC SC40B transistor 2n4992 2N4992 equivalent triac 9012 Thyristor 40V 120A
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , those of an "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C -
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2N4984 2N2646 cross reference GE SCR cross reference SUS 2N4984 3N82 2N4991 "cross reference" I2N2647
Abstract: SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at , NEXT STAGE. IF IT IS ON. THE DIODE WILL CONDUCT TRIGGERING THE NEXT STAGE. JUST PRIOR TO THE SHIFT -
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2N327 RCA SCR 2n IN4I48 40v neon lamp AC SCS bias 2N4993 2N499 2N27W 2N27I4 2N28ES 2NM46
Abstract: four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature -
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SUS-2N4986 IN5059 SUS 2N4987 2N4987-90 equivalent transistor of 2n6027 2N4987 equivalent
Abstract: SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS is a bilateral version of the forward -
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IN4148 anode cathode eto thyristor thyristor igc TRANSISTOR BO 344 thyristor eto SCR thyristor test
Abstract: SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS is a bilateral version of the forward -
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SCR nomenclature, General electric scr 6A n4148 GE 2N4992 NPN Monolithic Transistor Pair 3N83 IN4I46 500PPS
Abstract: SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS is a bilateral version of the forward -
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transistor 3N83 PNP Monolithic Transistor Pair nixie display nixie tubes NE-81 13N83
Abstract: may initiate turn on of the parasitic SCR type four-layer diode bipolar device. See Figure 12A , MAX RL FIGURE 12B. SIMPLIFIED DIAGRAM OF CMOS FOUR-LAYER DIODE STRUCTURE FIGURE 12. NMOS , the AC/ACT devices are sensitive to voltage levels. The only input current is the reverse diode , that it is the aluminum traces and not the diode junctions that are the limiting circuit elements. 5 , interface equivalent circuit are clamped to within one diode drop of VCC and ground, thereby reducing EMl Harris Semiconductor
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AN6525 AC/ACT CMOS family characteristics Difference between LS, HC, HCT devices 74 Series IC Manual plotter HARRIS PACKAGE LOGIC FCT CD54/74ACTXXX-S CD54/74ACXXX-S CD74AC00EX CD74ACT00EX
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