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ISL97901CRZ-TK Intersil Corporation RGB Buck-Boost Four-Channel LED Driver with Color Sequencing and Automatic White Balance; QFN28; Temp Range: 0° to 70° visit Intersil Buy
ISL97901CRZ Intersil Corporation RGB Buck-Boost Four-Channel LED Driver with Color Sequencing and Automatic White Balance; QFN28; Temp Range: 0° to 70° visit Intersil Buy
ISL97901CRZ-T Intersil Corporation RGB Buck-Boost Four-Channel LED Driver with Color Sequencing and Automatic White Balance; QFN28; Temp Range: 0° to 70° visit Intersil Buy
ISL97901CRZ-T7A Intersil Corporation RGB Buck-Boost Four-Channel LED Driver with Color Sequencing and Automatic White Balance; QFN28; Temp Range: 0° to 70° visit Intersil Buy
LMH6526SPX/NOPB Texas Instruments Four-Channel Laser Diode Driver with Dual Output 28-UQFN -40 to 85 visit Texas Instruments
LMH6525SP/NOPB Texas Instruments Four-Channel Laser Diode Driver with Dual Output 28-UQFN -40 to 85 visit Texas Instruments Buy

four-layer diode

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four-layer diode

Abstract: A CLIPPER CIRCUIT APPLICATIONS (Figure 15). Stairstep Generator­A CLD is used to optimize the performance of a four-layer diode , breakdown voltage of the fourlayer diode. Another stairstep generator (Figure 17, page 144) uses bipolar , with a CLD and zener diode (Figure 10b). 141 Typical Applications (Continued) Collector , Applications Two-Step Battery Charger­A pair of CLDs, along with a zener diode, provides for an excellent , low voltage reference designed with a zener diode. A low noise capacitor across R will further
Central Semiconductor
Original

A CLIPPER CIRCUIT APPLICATIONS

Abstract: four-layer diode Figure 15. Di D2 Stairstep Generator-A CLD is used to optimize the per formance of a four-layer diode stairstep generator (Figure 16). The CLD allows the use of input pulses only a few volts above the breakdown voltage of the four-layer diode. Another stairstep generator (Figure 17, page 21) uses bipolar , zener diode (Figure 10b). 'c c 2 3 'c c OUT IN OUT I Figure 10. DC Coupling 151 , diode, provides for an excellent two-step battery charger, as shown in Figure 20. + V o-d3 o D o d
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noise diode generator

Abstract: A CLIPPER CIRCUIT APPLICATIONS Figure 15. Di D2 Stairstep Generator - A CLD is used to optimize the per formance of a four-layer diode stairstep generator (Figure 16). The CLD allows the use of input pulses only a few volts above the breakdown voltage of the four-layer diode. Another stairstep generator (Figure 17, page 21) uses bipolar , replacing the coupling resistors R2 and Ra with a CLD and zener diode (Figure 10b). v cc v cc Figure 10 , Two-Step Battery Charger - A pair of CLDs, along with a zener diode, provides for an excellent two-step
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squarewave generator

Abstract: four-layer diode Generator- A CLD is used to optimize the per formance of a four-layer diode stairstep generator (Figure 16 , four-layer diode. Another stairstep generator (Figure 17, page 21) uses bipolar transistors and a CLD. This , zener diode (Figure 10b). v cc v cc Figure 10. DC Coupling 151 Centrar Collector Load , Two-Step Battery Charger-A pair of CLDs, along with a zener diode, provides for an excellent two-step , zener diode. A low noise capacitor across R will further reduce noise. Figure 21. Low Voltage/Low
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shockley diode

Abstract: opto triac TRIACs. All of these devices originate from the four-layer diode (also known as the Shockley diode). The four-layer diode is represented in figure 5 symbolically, and more importantly, functionally , -May-08 18131 (a) (b) (c) (d) Fig. 4 - Four-Layer Diode (Shockley Diode) For technical questions
Vishay Semiconductors
Original

four-layer diode

Abstract: transistor 2N4983 electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed
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four-layer diode

Abstract: MM74C901 . Currents of 5 mA or greater from a CMOS input clamp diode can cause four-layer diode action on the CMOS , normally can pull more negative than ground, the conventional CMOS input diode clamp from input to ground , clamped at one diode drop (-0.6V), all the current that flows comes from the PMOS negative supply. For , diode from inputs to VCC only. This single diode provides adequate static discharge protection and, at , without the diode, both the high power dissipation and latch up problems are eliminated. To demonstrate
Fairchild Semiconductor
Original

four-layer diode

Abstract: MM74C greater from a CMOS input clamp diode can cause four-layer diode action on the CMOS device This at best , overcome this problem the MM74C903 and MM74C904 have been designed with a clamp diode from inputs to VCC only This single diode provides adequate static discharge protection and at the same time allows voltages of up to b 17V on any input Since there is essentially no current without the diode both the , the conventional CMOS input diode clamp from input to ground poses problems The least of these is
National Semiconductor
Original
MM74C MM54C901 MM74C901 MM54C904 MB-18 four-layer diode four layer diode p-mos ttl C1995 MM54C

2n2646 equivalent

Abstract: 2N4991 four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , symmetrical negative resistance diode. All electrical limits shown apply in either direction of current flow
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2N2646 2N4991 2n2646 equivalent 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N489-494 2N2646-47 2N489-94 2N1671 2H21S0

2n2646 equivalent

Abstract: 2N2646 four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , Circuit 2) Turn-off Time (See Circuit 3) *This device is a symmetrical negative resistance diode. All
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triac phase control EQUIVALENT 2N1671 2N602B SBS thyristor 2N4987 3n84 2N2647 2N6027 2N602 INI4993

2N4983

Abstract: transistor 2N4983 four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature coefficient. A gate lead
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2N4983 2N4986 transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 GE C22B scs thyristor S-2N4983 2N4963

2N2646 equivalent

Abstract: SUS-2N4989 four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , approximating those of an "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C
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2N4988 SUS-2N4989 20 amp 800 volt triac 3N81 D5K2 2N4985 047/1F 2N4989 GEC32U J2N2647

GE TRIAC SC40B

Abstract: 2n4992 four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , a symmetrical negative resistance diode. Ail electrical limits shown apply in either direction of , the flow of gate current respectively. Electrical requirements of D1 and D2 are easily met. Any diode , of the SBS. The General Electric 6RS5GC1UAJ1 (common cathode) dual diode makes an excellent choice
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SC40B GE TRIAC SC40B 2n4992 transistor 2n4992 2N4992 equivalent triac 9012 2N4992

2N4985

Abstract: 2N2646 cross reference four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , those of an "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C
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2N4984 2N2646 cross reference GE SCR cross reference SUS 2N4984 GE SCR 1000 AMP 2N4991 "cross reference" I2N2647

3N84

Abstract: 2N4988 SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at , NEXT STAGE. IF IT IS ON. THE DIODE WILL CONDUCT TRIGGERING THE NEXT STAGE. JUST PRIOR TO THE SHIFT
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2N4990 2N327 RCA SCR 2n 3N85 IN4I48 40v neon lamp unijunction transistor 2N499 2N27W 2N27I4 2N28ES 2NM46

2n2646 equivalent

Abstract: IN5059 four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02 , fixed low voltage threshold, low cost, high performance "4-layer diode." SILICON BILATERAL SWITCH (SBS , "ideal" four layer diode. The device is designed to switch at 8 volts with a 0.02%/°C temperature
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SUS-2N4986 IN5059 SUS 2N4987 2N4987-90 2N4987 equivalent ge motor capacitor cross reference

3N81

Abstract: IN4148 anode cathode SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS is a bilateral version of the forward
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IN4148 anode cathode eto thyristor thyristor igc TRANSISTOR BO 344 SCR thyristor test IR SCR 16 RC 100A

3n84

Abstract: SCR nomenclature, General electric SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS is a bilateral version of the forward
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SCR nomenclature, General electric scr 6A 2N4993 GE 2N4992 9019 transistor 3N83 IN4I46 500PPS

3N83

Abstract: 3N84 SILICON UNILATERAL AND BILATERAL SWITCHES (SUS, SBS) The General Electric SUS is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approximating those of an "ideal" four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of 0.02%/°'C. A gate lead is provided to eliminate rate effect, obtain triggering at lower voltages, and to obtain transient-free waveforms. The SBS is a bilateral version of the forward
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transistor 3N83 pin configuration NPN transistor 9012 PNP pin configuration NPN transistor 9012 npn transistor pnp 12V 1A Continuous Current Peak PNP Monolithic Transistor Pair nixie display NE-81 13N83

AC/ACT CMOS family characteristics

Abstract: AN6525 may initiate turn on of the parasitic SCR type four-layer diode bipolar device. See Figure 12A , MAX RL FIGURE 12B. SIMPLIFIED DIAGRAM OF CMOS FOUR-LAYER DIODE STRUCTURE FIGURE 12. NMOS , the AC/ACT devices are sensitive to voltage levels. The only input current is the reverse diode , that it is the aluminum traces and not the diode junctions that are the limiting circuit elements. 5 , interface equivalent circuit are clamped to within one diode drop of VCC and ground, thereby reducing EMl
Harris Semiconductor
Original
AC/ACT CMOS family characteristics AN6525 Difference between LS, HC, HCT devices 74 Series IC Manual plotter HARRIS PACKAGE LOGIC FCT CD54/74ACTXXX-S CD54/74ACXXX-S CD74AC00EX CD74ACT00EX
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