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Part : FLU10XM Supplier : Sumitomo Electric Manufacturer : Component Distributors Stock : 43 Best Price : - Price Each : -
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flu10 Datasheet

Part Manufacturer Description PDF Type
FLU10XM Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLU10XM-E1 Fujitsu FET: P Channel: ID 0.45 A Original
FLU10ZM Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLU10ZM-E1 Fujitsu Original

flu10

Catalog Datasheet MFG & Type PDF Document Tags

FLL105

Abstract: FLL55 FLU17 % · FLL171 FLC161 FLC103 FLK202 FLK102 c o R106 30 FLU10 · · FLL101 FLC091
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FLL300-1 FLL200-1 FLL300-2 FLL200-3 FLL200-2 FLL120 FLL105 FLL55

FMC141401-02

Abstract: fujitsu gaas marking code FLC103WG FLK022WG FLK052WG C053 C103 K022 K052 Case Style "WG" FLU10XM FLU17XM FLU35XM Y U " Case
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FMC141401-02 fujitsu gaas marking code Fujitsu K022 FUJITSU L101 FSX52WF fujitsu x51 MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

BPW14A

Abstract: BPW14 4.5 PF Switching characteristics Vs - 5 V, /c - 5 mA, flu=100 Q, Xp«= 950 nm, see test circuit
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BPW14 BPW13 BPW14A BPW14C bpw14b BPW 14 A IAL66 JEDECT018 2/I127
Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES â'¢ High Output Power: P1dB=29.5dBm (Typ , ) Package â'¢ Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & , (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High , -48.5 .886 -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Fujitsu
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FCSI0598M200

FLL57MK

Abstract: ELM7785-60F FLU35ZME1 FLU17XM FLU17ZME1 FLU10XM FLU10ZME1 SMT Devices 1 0.1 1.0 Applications: 1.5 LTE/WCDMA , 42.5 42.5 42.5 44.5 44.5 44.5 45.5 48 49.0 *2 Specifications Part Number FLU10XM FLU10ZME1 FLU17XM
Sumitomo Electric
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FLL57MK FLL357ME ELM7785-60F fll600iq-2 fll177 fll57 FLK027WG FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLL300IL-1 FLL200IB-1 FLL300IL-2

FLU10XM

Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , . Any lot failure shall be 100% retested. Edition 1.3 October 2004 1 FLU10XM L-Band Medium & , Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic
Eudyna Devices
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MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor GaAs L / S Band Medium Power HJ FET (See-A part # for Pb-free) Fujitsu FLU10XM NE651R479A Closest
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MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545

FLU10XM

Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , failure shall be 100% retested. Edition 1.2 July 1999 1 FLU10XM L-Band Medium & High Power , (dBm) Total Power Dissipation (W) 5 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 , Download S-Parameters, click here 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM"
Fujitsu
Original
Abstract: FLU10XM L-Band Medium & High Power GaAs FETs FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , Compression Point Data Sheets 152 1998 Microwave Databook FLU10XM L-Band Medium & High Power , FLU10XM L-Band Medium & High Power GaAs FETs +j50 +j25 +j100 0.5 GHz 1 S11 S22 +90¡ S21 S12 , Sheets 154 1998 Microwave Databook FLU10XM L-Band Medium & High Power GaAs FETs Case Style Fujitsu
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U10XM

FLU10XM

Abstract: ^^^^^^^^ FLU10XM _ L-Band Medium & High Power GaAs FET FEATURES â'¢ High Output Power: P1dB , (SMT) Package â'¢ Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base , % retested. Edition 1.2 July 1999 FUJITSU FLU10XM L-Band Medium & High Power GaAs F ET POWER DERATING , " * * * * * * 'ladd 8 10 12 14 16 18 Input Power (dBm) 50 40 30 20 10 TD T3 CO P" Fujfrsu FLU10XM , FLU10XM L-Band Medium & High Power GaAs F ET Case Style "XM" Metal-Ceramic Hermetic Package (0.150
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FLU10

Abstract: fujitsu gaas fet L-band FLU10ZM L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ.) High , FLU10ZM is a GaAs FET designed for base station and CPE applications. This is a new product series using , 2003 1 FLU10ZM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power , FLU10ZM L-Band Medium & High Power GaAs FET S-PARAMETER +50 j 10 25 50 +10j 1.0 +2 50j , -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 FLU10ZM L-Band Medium & High
Fujitsu
Original
fujitsu gaas fet L-band fujitsu flu pae100 FCSI0202M200
Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , October 2004 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN , ) 40 FLU10XM L-Band Medium & High Power GaAs FET S11 S22 +j100 0.5 GHz 1 +j50 +j25 +90° , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic Eudyna Devices
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IAO5 Sharp

Abstract: free transistor equivalent book 2sc FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB
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IAO5 Sharp free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Q60103- ACY32

FLC301XP

Abstract: FLC301XP equivalent MK MK IB IB IB IL IL IL IP WG WF WG WF MH MH MG Frequency Band ·FLU10XM ·FLU17XM ·FLU35XM
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FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D

FLL55

Abstract: FLL101ME FLU10ZME1 L-Band Medium & High Power GaAs FET FEATURES High Output Power: P1dB=29.5dBm(typ , FLU10ZME1 is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This , FLU10ZME1 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 8 Total Power Dissipation [W , 2 P ow e r Adde d Efficie ncy [%] 32 FLU10ZME1 L-Band Medium & High Power GaAs FET , -52.39 -78.22 -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 FLU10ZME1 L-Band
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fll300ip-2 FLC253MH-6 FLL200IB-2 FLL200IB-3 FLL300IL-3 FLL300IP-2 FLC053W FLC091W
Abstract: FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station applications in , FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE 5 Total Power Dissipation (W) 4 3 2 1 , hadd (%) 40 FLU10XM L-Band Medium & High Power GaAs FET +j50 +j25 +j100 0.5 GHz 1 S11 S22 , -164.5 3 FLU10XM L-Band Medium & High Power GaAs FET Case Style "XM" Metal-Ceramic Hermetic Sumitomo Electric
Original
Abstract: recovery time (JF = /R = 10 mA; recovery to 1 mA) Reverse recovery time (/F = 10 mA; l/H = 6 V; flu=100Q Fujitsu
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BAY63

Abstract: BAW75 FLU10XM L-Band Medium & High Power GaAs FET FEATURES · High Output Power: P1dB=29.5dBm (Typ.) · , Tape and Reel Available DESCRIPTION The FLU10XM is a GaAs FET designed for base station , 1999 1 FLU10XM L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , ) 2 18 add (%) 0 Output Power (dBm) Total Power Dissipation (W) 5 FLU10XM , -48.5 .886 -164.5 Download S-Parameters, click here 3 FLU10XM L-Band Medium & High
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BAY60 BAW75 BAY63 Q60201-Y

FLU10XM

Abstract: FLU10 FLU10ZM FEATURES High Output Power: P1dB=29.5dBm(typ.) High Gain: G1dB=13.0dB(typ.) Low Cost , FLU10ZM is a GaAs FET designed for base station and CPE application up to a 3.0GHz frequency range. This , : Based on EIAJ ED-4701 C-111A (C=100pF,R=1.5k) Edition 1.2 Jan 2004 1 FLU10ZM L-Band Medium & , ow e r Adde d Efficie ncy [%] 30 80 FLU10ZM L-Band Medium & High Power GaAs FET , ANG -52.39 -78.22 -91.11 -101.36 -114.34 -128.63 -153.74 179.95 161.06 146.70 3 FLU10ZM L-Band
Eudyna Devices
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Abstract: FLU17 % · FLL171 FLC161 FLC103 FLK202 FLK102 c o R106 30 FLU10 · · FLL101 FLC091 Eudyna Devices
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