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fll120mk Datasheet

Part Manufacturer Description PDF Type
FLL120MK Eudyna Devices L-Band Medium & High Power GaAs FET Original
FLL120MK-E1 Fujitsu FET: P Channel: ID 6 A Original

fll120mk

Catalog Datasheet MFG & Type PDF Document Tags

100OB

Abstract: FLL120MK FLL120MK _ L-Band Medium & High Power GaAs FET FEATURES â'¢ High Output Power: P1dB = 40.0dBm , â'¢ Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically , FUJITSU FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , _ * * 20 22 24 26 28 30 32 Input Power (dBm) 60 40 20 0 T3 T3 CO P" Fujfrsu FLL120MK L-Band Medium & , 107.3 Fujfrsu FLL120MK L-Band Medium & High Power GaAs FET Case Style "MK" Metal-Ceramic Hermetic
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100OB FLL120 fujitsu gaas fet FCSI0598M200

L-Band

Abstract: FLL120MK L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = 40.0dBm , Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide , Point Edition 1.2 October 2004 1 FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING , (mA) 60 40 20 0 2 FLL120MK L-Band Medium & High Power GaAs FET +j50 +j100 +j25 4.5 4.0 , 174.0 168.3 158.9 145.1 128.0 107.3 3 FLL120MK L-Band Medium & High Power GaAs FET Case Style
Eudyna Devices
Original
L-Band
Abstract: FLL120MK L-Band Medium & High Power GaAs FET FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ High Output , Reliability Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically , July 1999 G.C.P.: Gain Compression Point 1 FLL120MK L-Band Medium & High Power GaAs FET , ) 0 Output Power (dBm) Total Power Dissipation (W) 50 FLL120MK L-Band Medium & High Power , here 3 FLL120MK L-Band Medium & High Power GaAs FET 2.5 Min. (0.098) Case Style "MK" Fujitsu
Original

FLL120MK

Abstract: Eudyna Devices FLL120MK L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to , Point 1 FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , FLL120MK L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5 , FLL120MK L-Band Medium & High Power GaAs FET 2.5 Min. (0.098) Case Style "MK" Metal-Ceramic
Eudyna Devices
Original
Eudyna Devices

FLL120MK

Abstract: FLL120 FLL120MK L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to , 1 FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , FLL120MK L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5 , S-Parameters, click here 3 FLL120MK L-Band Medium & High Power GaAs FET 2.5 Min. (0.098) Case
Fujitsu
Original

fll120mk

Abstract: FLL120 FLL120MK L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Hermetically Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to , 1 FLL120MK L-Band Medium & High Power GaAs FET POWER DERATING CURVE DRAIN CURRENT vs , FLL120MK L-Band Medium & High Power GaAs FET S11 S22 +j50 S21 S12 +90° +j100 +j25 0.5 , S-Parameters, click here 3 FLL120MK L-Band Medium & High Power GaAs FET 2.5 Min. (0.098) Case
Eudyna Devices
Original

fll120mk

Abstract: FLL120MK L-Band Medium & High Power GaAs FET FEATURES · · · · · High Output Power: P1dB = , Sealed Package DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide , .: Gain Compression Point Edition 1.1 July 1999 1 FLL120MK L-Band Medium & High Power GaAs FET , Drain Current (mA) 60 40 20 0 2 FLL120MK L-Band Medium & High Power GaAs FET S11 S22 +j100 , 176.5 174.0 168.3 158.9 145.1 128.0 107.3 3 FLL120MK L-Band Medium & High Power GaAs FET Case
Fujitsu
Original

FLL120mk

Abstract: FLL120MK Item Drain-Source Voltage Gate-Source Voltage L-Bcuid Medium & High Power GaAs FETs ABSOLUTE MAXIMUM RATING (A m bient Tem perature Ta=25°C) Symbol Vd S vgs Condition Rating 15 -5 Unit V V Total Power Dissipation Storage Temperature Channel Temperature Pt Tstg Tch Tc = 25°C 37.5 -65 to +175 175 w °c °c Fujitsu recommends the following conditions for the reliable , Data Sheets L-tìand Medium & High Power GaAs FETs FLL120MK FREQUENCY (MHZ) S11 MAG ANG
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FSX52WF

Abstract: fujitsu "application notes" GHz FSX51WF FSX52WF FLL351ME FLL120MK P1dB = 39.5 dBm c) 16 Watt f = 1.5 GHz , (FLL300IL-3) FSX51WF FLL101ME FLL105MK FLL120MK FLL300IL-X P1 dB = 44.0 dBm e) 31.5 Watt f , FLL105MK FLL120MK FLL200IB-X P1dB = 45.0 dBm O) o FLL300IL-X FSX51WF f) 50 Watt f = 0.9 GHz (FLL300IL-1) f = 1.8 GHz (FLL300IL-2) f = 2.6 GHz (FLL300IL-3) FLL101ME FLL120MK P1dB = 47.0 dBm O) o FUPSU , CIRCUIT INPUT 8 r =9.7 t=0.65 Units: mm OUTPUT 10) FLL120MK APPLICATION f=2.3 GHz MATCHING
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fujitsu "application notes" FMC141401-02 NF037 FLL101 fll171 FMC1414P1-02 FHC40LG FHX04LG FHX05LG FHX06LG FHX14LG FLL171ME

FLL55

Abstract: FLL101ME FLL101ME FLL171ME FLL351ME FLL55MK FLL120MK FLL200IB-1* FLL200IB-2* FLL200IB-3* FLL300IL-1 FLL300IL
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FLU10XM FLL55 flu10 fll300ip-2 FLC253MH-6 FLU17XM FLU35XM FLL300IP-2 FLC053W FLC091W

FLL57MK

Abstract: ELM7785-60F Power [W] 10 Discrete FETs Discrete FETs FLL120MK FLL57MK FLL357ME FLL177ME FLL107ME FLU35XM , FLU17ZME1 FLU35XM FLU35ZME1 FLL107ME FLL177ME FLL357ME FLL57MK FLL120MK FLL200IB-1 FLL200IB-2 FLL200IB
Sumitomo Electric
Original
ELM7785-60F fll600iq-2 fll177 fll57 FLK027WG FLL400IP2 FLL810IQ-4C FLL600IQ-2 FLL400IP-2 FLU10ZME1 FLL810I
Abstract: L-Band Medium & High Power GaAs FETs FEATURES · · · · · High Output Power: P-idg = 40.0dBm (Typ.) High Gain: G-j^B = 10.0dB (Typ.) High PAE: riadd = 40% (Typ.) Proven Reliability Hermetically Sealed Package F L L120M K fU ÎIT S U * DESCRIPTION The FLL120MK is a Power GaAs FET that is specifically designed to provide high power at L-Band frequencies with gain, linearity and efficiency superior to that of silicon devices. The performance in multitone environments for Class AB operation make -
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FLL120M LL120M

FMC141401-02

Abstract: fujitsu gaas marking code "MH" FLL55MK FLL105MK FLL120MK FLL55 FLL105 FLL120 Case Style "MK" FLC091WF FLC161WF FLK012WF
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fujitsu gaas marking code Fujitsu K022 FLL300-2 FUJITSU L101 fujitsu x51 FLL300-1 MC181901 FMC2122LN-03 FMC2122C6-03 FMC2122P1-02 FMC2122P5-01 FMC2223LN-03

FLC301XP

Abstract: FLC301XP equivalent FSX52X/WF FSU01LG FLU10XM FLU17XM FLU35XM FLL101ME FLL171ME FLL351ME FLL55MK FLL105MK FLL120MK FLL200IB
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FLC301XP FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D

Avago 9886

Abstract: XFRV MWE6IC9100NR1 FLL120MK BAS 40 BAS 40 BAS 70 BBY51-02W Modelithics Part # PIN-MIM-0603-001 PIN-MIM-VARP
MODELITHICS
Original
Avago 9886 XFRV Rohm Diodes BFP949 SKD-ONS-ST23-001 NE3210

MRF947T1 equivalent

Abstract: MRF947T1 equivalent transistor Closest equivalent GaAs L / S Band Medium Power MESFET Fujitsu FLL120MK NE650103M-A Closest
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Original
MRF947T1 equivalent MRF947T1 equivalent transistor NJ1006 BFP320 MGF4919G fujitsu gaas fet fhx76lp 2SA1977 2SA1978 2SC2351 2SC3355 2SC3357 2SC3545