NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: , 30 GHz 25 30 20 20 10 10 15 20 PAE (%) 40 15 Pout (dBm) 30 25 Pin (dBm) 0.25-um mmW pHEMT 2MI Efficiency Tuned Load 600-um FET @ 6 Volts, 30 GHz 25 30 , Volts, 15 mA 3.0 NFmin (dB) 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 Frequency (GHz , systems. 26 to 35 GHz Medium Power Amplifier TGA1073A-SCC TGA1073A-SCC: This medium-power amplifier provides 25 dBm , for high-power and low-noise applications through 50 GHz. Passives include 2 thick-metal interconnect ... | Original |
6 pages, |
TGA4502-EPU FET differential amplifier circuit fet differential amplifier schematic Ka-band 10 ghz driver amplifier TGA1073A TGA1073A-SCC TGA4501-EPU TGA1171-SCC ka-band mixer pHEMT transistor fet ft 30 GHZ datasheet abstract |
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| Abstract: Process Data Sheet 0.25-um mmW pHEMT 3MI Power Tuned Load 600-um FET @ 6 Volts, 30 GHz 25 30 , ) 0.25-um mmW pHEMT 3MI Efficiency Tuned Load 600-um FET @ 6 Volts, 30 GHz 25 30 20 20 10 , -1 V Ft (peak) 55 GHz density MIM capacitors 510 240 pF/mm 300 1200 , 0.25-um mmW pHEMT 3MI Minimum Noise Figure 200-um FET @ 3 Volts, 15 mA 3.0 NFmin (dB) 2.5 2.0 , Available Gain/Stable Gain (MAG/MSG) 600-um FET @ 6 Volts, 60 mA 1.4 25 MAG/MSG (dB) 1 15 0.8 ... | Original |
6 pages, |
TGC1452-EPU TGC1430F-EPU TGA4510-EPU pHEMT Microwave power GaAs FET data datasheet abstract |
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| Abstract: 2.5 fT = 7 GHz 5 40 150 125 MR fT = 10 GHz 2.9 1.5 VHFUHF , 85 ( 1) 125 03 fT = 10 GHz VHFUHF 5 25 85 ( 1) 125 04 fT = 12 GHz VHFUHF 6 40 85 ( 1) 125 08 fT = 6 GHz 2.5 30 85 ( 1) 125 , 550 MHz *: 2011/1 SCJ0004R SCJ0004R () (Ta = 25°C) TO-92 125 08 fT = 6 GHz , 60 150 P8 fT = 25 GHz 3 10 30 150 P1 fT = 25 GHz UHFSHF 1.2 35 ... | Original |
14 pages, |
3SK292 TIM5867-15UL MT3S111P MT4S301U MT4S24U rfm03u3ct TA4032FT TA4029TU TIM6472-30UL tb7601tu MT4S301T MT4S300U TGI8596 tim4450 SCJ0004R SCJ0004R abstract |
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| Abstract: : Hewlett-Packard's state-of-the-art 10 GHz fT 25 GHz fMAX silicon bipolar process is also used to manufacture the , HP-25: This process results from enhancements to Hewlett-Packard's high speed digital silicon processes, to make it suitable for microwave applications. It has a nominal fT of 25 GHz. MESFET , high speed analog integrated circuits. Material and processing enhancements raise the nominal fT of this process to above 15 GHz. Design flexibility is enhanced through the addition of second metal ... | Original |
2 pages, |
in 3003 TRANSISTOR base band bpsk modulator chip HMMC-1002 HMMC-2007 HMMC-2027 HP-25 HPMX-3003 HPMX-5001 HPMX-5002 9x-series HMMC-2006 HP-25 abstract |
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| Abstract: TOSHIBA MICROWAVE SEMICONDUCTOR TECHNICAL DATA MICROWAVE POWER GaAs FET TIM 1414-7-252 FEATURES : a HIGH POWER P1dB = 38.OdBm at 13.75 GHz to 14.5 GHz BROAD BAND INTERNALLY MATCHED â- HIGH GAIN GidB = 6.0 dB at 13.75 GHz to 14.5 GHz HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS (Ta = 25°C) CHARACTERISTICS SYMBOL CONDITION UNIT MIN. TYP. MAX. Output Power at 1dB Compression Point PidB VDS = 9 V f = 13.75-14.5 GHz dBm 37.0 38.0 - Power Gain at 1dB Compression Point GidB dB 5.0 6.0 ... | OCR Scan |
4 pages, |
TIM1414-7-252 datasheet abstract |
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| Abstract: ) = 26.0 dBm TYP. @ VCE = 3.6 V, f = 1.8 GHz, Pin = 15 dBm C = 60% UHS0-HV fT = 25 GHz 4 M04 , PU10008JJ02V0DS PU10008JJ02V0DS 2SC5754 2SC5754 vs. MAGMSG vs. 35 25 |S21e|2 (dB) MAG (dB) MSG (dB) fT (GHz) VCE = 3 V f = 0.5 GHz 20 15 10 5 0 1 10 100 30 MSG MAG 25 20 15 10 , 5 0 15 10 25 300 VCE = 3.2 V, f = 2.4 GHz ICq = 20 mA, 1/2 Duty 250 Pout , R57 16 dBm 2SC5753 2SC5753 1 00 9Z 25 dBm 2SC5754 2SC5754 35 dBm NE5520379A NE5520379A (MOS FET ... | Original |
14 pages, |
2SC5434 2SC5509 2SC5753 2SC5754 2SC5754-T2 DCS1800 GSM1800 NE5520379A TRANSISTOR R57 datasheet abstract |
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| Abstract: noise amplifiers operating in the 2-16 GHz frequency range. This GaAs FET device has a nominal 0.3 , 8.0 GHz f = 12.0 GHz f = 14.0 GHz dB dB dB 1.0 1.2 1.4 1.4 Ga Gain @ NFo: Vos = 2.5 V, Ids = 15 - 30 , f = 12.0 GHz dB 8.5 gm Transconductance: Vds = 2.5 V, Vgs = 0 V mmho 25 55 loss Saturated , V». !DS AND MAXIMUM STABLE GAIN va. FREQUENCY Vol> = 2.5 V, 1=12.0 GHz vDs = 2.5 V, l03 = 20 mA , AVANTEK INC ©AVANTEK EDE D imnbb OGQbSHb 5 ATF-13136 ATF-13136 2-16 GHz Low Noise Gallium Arsenide F ET ... | OCR Scan |
2 pages, |
Avantek, Inc 2-18 GHz Low Noise Gallium Arsenide FET ATF-13136-TR1 avantek atf-13136 ATF13136 ATF-13136 ATF-13136 abstract |
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| Abstract: , supports low-noise highgain GHz operation 2in1 FET Off through SW FET 0.5-umDP-BiCMOS process fT , , cellular, PHS, RF/IF amp., and VCO 22 fT =10GHz 2SC5623 2SC5623 2SC5624 2SC5624 fT (GHz) Emitter length High fT silicon bipolar transistor Application High fT 27 GHz High|S21| 17dB Low Noise Figure , be expanded and improved Type No. Package 9 New 2SC5623 2SC5623 CMPAK-4 fT = 27 GHz, PG = 19 dB, NF = 1.8 dB (f =1.8 GHz) 2SC5624 2SC5624 CMPAK-4 fT = 28 GHz, PG = 18 dB, NF = 1.2 dB (f =1.8 ... | Original |
17 pages, |
RF TRANSISTOR 10GHZ datasheets of ic 1408 3SK318 fet ft 20 GHZ 2SC5628 2SC4784F SMD TRANSISTOR fet smd transistor 2Q TRANSISTOR SMD mos fet specifications of ic 1408 A08 smd transistor lg tv electronic diagram BB304M datasheet abstract |
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| Abstract: Tuned Load 1000-um FET @ 9 Volts, 10 GHz 50 25 40 20 30 15 20 10 15 20 , Load 1000-um FET @ 9 Volts, 10 GHz 50 25 40 20 30 15 20 10 15 20 PAE (% , 375 mS/mm Vbd -21 V Vp -1 V Ft (peak) 60 GHz density MIM , FET @ 9 Volts, 75 mA 1.4 25 MAG/MSG (dB) 1 15 0.8 10 0.6 0.4 5 Stability , This process is optimized for high-power applications through 20 GHz. The process demonstrates ... | Original |
6 pages, |
fet ft 20 GHZ 640 t fet datasheet abstract |
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| Abstract: SPDT Si Tr. (fT = 25 GHz) SiGe HBT - - - PG2009TB PG2009TB PG2010TB PG2010TB - - Tr. - , 2SC5508 2SC5508 (NE662M04 NE662M04) - Si Tr. (fT = 25 GHz) - - - - PA8xx PC8128TB PC8128TB PC8151TB PC8151TB , fT = 25 GHz Tr. 6 - - - PA8xx - Tr. - - PC8106TB PC8106TB PC2763TB PC2763TB , Tr. Si Tr. (fT = 25 GHz) Tr. 2SC5507 2SC5507 2SC5508 2SC5508 NESG2021M05/M16 NESG2021M05/M16 NESG2031M05/M16 NESG2031M05/M16 , (NE662M04 NE662M04) PB1007K PB1007K GaAs HJ-FET SiGe Tr. SiGe:C MMIC Si MMIC Si Tr. (fT = 25 GHz ... | Original |
42 pages, |
PG2009TB PC3219GV 2SC5006 PC8236T6N PG2179TB 2SC3357/NE85634 NESG240033 PC3217GV NE3512 NE3517S03 2sc3357 NE3514 NE5510279A NESG2101 datasheet abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| Applications Voltage (V) Current (mA) Frequency (MHz) PKG fT (GHz) NE3210S01 NE3210S01 NE3210S01 NE3210S01 DBS Converter,LNA,HJ-FET 2 10 4000-18000 S01 - NE32484A NE32484A NE32484A NE32484A DBS Converter,HJ-FET 2 10 12000 84A - NE32584C NE32584C NE32584C NE32584C DBS Converter,HJ-FET 2 10 12000 84C - NE325S01 NE325S01 NE325S01 NE325S01 DBS Converter,LNA,HJ-FET 2 10 12000 S01 - NE33284A NE33284A NE33284A NE33284A DBS Converter,HJ-FET 2 10 4000 84A - NE334S01 NE334S01 NE334S01 NE334S01 DBS Converter,HJ-FET 2 15 4000 www.datasheetarchive.com/files/nec/search/dbs-conv.html |
NEC | 17/11/1999 | 12.18 Kb | HTML | dbs-conv.html |
| 5/5 2.7/5 10GHz ft 10GHz ft 10.5 10 /mA Frequency Range/GHz Gain/dB 1 @ 2GHz P1dB/dBm 1 @ 2GHz OIP3/dBm @ 2 www.datasheetarchive.com/files/agilent/files/applications/radio_app.html |
Agilent | 24/10/2003 | 46.9 Kb | HTML | radio_app.html |
| Device List / PDC / Part Number Applications Voltage (V) Current (mA) Frequency (MHz) PKG fT (GHz) 2SC5015 2SC5015 2SC5015 2SC5015 (NE68518 NE68518 NE68518 NE68518 Mobile Comm.,GPS,PDC,PHS,LNA,HJ-FET 2 5 800-3000 18 - NE38018 NE38018 NE38018 NE38018 Mobile Comm.,GPS,PDC,LNA,HJ-FET -960 6MM - uPG2106TB uPG2106TB uPG2106TB uPG2106TB Mobile Comm.,PDC,AGC Amp.,Driver Amp. 3 25 889-960 6SMM - uPG2110TB uPG2110TB uPG2110TB uPG2110TB Mobile Comm.,PDC,AGC Amp.,Driver Amp. 3 25 1429-1453 6SMM - 20 www.datasheetarchive.com/files/nec/search/pdc.html |
NEC | 17/11/1999 | 9.65 Kb | HTML | pdc.html |
| Applications Voltage (V) Current (mA) Frequency (MHz) PKG fT (GHz) 2SC1927 2SC1927 2SC1927 2SC1927 (NE73440B NE73440B NE73440B NE73440B ,Bip. Tr. 8 7 2000 micro-X 8.5 2SC3663 2SC3663 2SC3663 2SC3663 General Purpose,Bip. Tr. 1 0.25 .0 2SC4187 2SC4187 2SC4187 2SC4187 (NE68330 NE68330 NE68330 NE68330) General Purpose,Bip. Tr. 1 0.25 1000 3SMM 4.0 2SC4225 2SC4225 2SC4225 2SC4225 ,Buffer Amp.,Bip. Tr. 2 2 2000 4TSMM 25.0 2SC5508 2SC5508 2SC5508 2SC5508 (NE662M04 NE662M04 NE662M04 NE662M04) VCO,Buffer Amp.,Bip. Tr. 2 5 2000 4TSMM 25.0 2SC5509 2SC5509 2SC5509 2SC5509 (NE663M04 NE663M04 NE663M04 NE663M04) VCO,Buffer Amp.,Bip. Tr. 2 www.datasheetarchive.com/files/nec/search/all.html |
NEC | 17/11/1999 | 166.99 Kb | HTML | all.html |
| Push-Pull Transistors *AN595/D AN595/D AN595/D AN595/D 25 Watt and 10 Watt VHF Marine Band Transmitters AN721/D AN721/D AN721/D AN721/D Crystal Oscillator EB77/D EB77/D EB77/D EB77/D A 60 Watt, 225-400MHz Amplifier - 2N6439 2N6439 2N6439 2N6439 EB79/D EB79/D EB79/D EB79/D Pulsed fT, a Technique for Accurately Measuring the Gain Bandwidth Product EB89/D EB89/D EB89/D EB89/D A 1 Watt, 2.3GHz Uses Splitting/ Combining Techniques EB104/D EB104/D EB104/D EB104/D Get 600 Watts RF from Four Power FETs EB107/D EB107/D EB107/D EB107/D -Signal Transistors, FETs and Diodes Device Data DL413/D DL413/D DL413/D DL413/D Radio, RF and Video Applications Manual DL414/D DL414/D DL414/D DL414/D www.datasheetarchive.com/files/motorola/design-n/lit/html/br135a/rf.htm |
Motorola | 25/11/1996 | 4.95 Kb | HTM | rf.htm |
| Applications Voltage (V) Current (mA) Frequency (MHz) PKG fT (GHz) 2SC1927 2SC1927 2SC1927 2SC1927 (NE73440B NE73440B NE73440B NE73440B ,Bip. Tr. 8 7 2000 micro-X 8.5 2SC3663 2SC3663 2SC3663 2SC3663 General Purpose,Bip. Tr. 1 0.25 .0 2SC4187 2SC4187 2SC4187 2SC4187 (NE68330 NE68330 NE68330 NE68330) General Purpose,Bip. Tr. 1 0.25 1000 3SMM 4.0 2SC4225 2SC4225 2SC4225 2SC4225 ,Buffer Amp.,Bip. Tr. 2 2 2000 4TSMM 25.0 2SC5508 2SC5508 2SC5508 2SC5508 (NE662M04 NE662M04 NE662M04 NE662M04) VCO,Buffer Amp.,Bip. Tr. 2 5 2000 4TSMM 25.0 2SC5509 2SC5509 2SC5509 2SC5509 (NE663M04 NE663M04 NE663M04 NE663M04) VCO,Buffer Amp.,Bip. Tr. 2 www.datasheetarchive.com/files/nec/search/discrete.html |
NEC | 17/11/1999 | 104.92 Kb | HTML | discrete.html |
| Applications Voltage (V) Current (mA) Frequency (MHz) PKG fT (GHz) 2SC1927 2SC1927 2SC1927 2SC1927 (NE73440B NE73440B NE73440B NE73440B ,Bip. Tr. 8 7 2000 micro-X 8.5 2SC3663 2SC3663 2SC3663 2SC3663 General Purpose,Bip. Tr. 1 0.25 .0 2SC4187 2SC4187 2SC4187 2SC4187 (NE68330 NE68330 NE68330 NE68330) General Purpose,Bip. Tr. 1 0.25 1000 3SMM 4.0 2SC4225 2SC4225 2SC4225 2SC4225 3 2000 6SMM 14.0 NE321000 NE321000 NE321000 NE321000 General Purpose,HJ-FET 2 10 4000-18000 Chip - NE32400 NE32400 NE32400 NE32400 General Purpose,HJ-FET 2 10 12000 Chip - NE32500 NE32500 NE32500 NE32500 www.datasheetarchive.com/files/nec/search/general.html |
NEC | 17/11/1999 | 56.88 Kb | HTML | general.html |
| Applications Voltage (V) Current (mA) Frequency (MHz) PKG fT (GHz) 2SC5015 2SC5015 2SC5015 2SC5015 (NE68518 NE68518 NE68518 NE68518 3 2000 3TU SMM 10.0 NE34018 NE34018 NE34018 NE34018 Mobile Comm.,GPS,PDC,PHS,LNA,HJ-FET 2 5 800-3000 18 - NE38018 NE38018 NE38018 NE38018 Mobile Comm.,GPS,PDC,LNA,HJ-FET 2 5 800-3000 18 :7 Q1:2000, Q2:1000 6TUSMM - uPB1502GR uPB1502GR uPB1502GR uPB1502GR Mobile Comm.,1.7GHz,64/65,128/129,Prescaler 3 6.7 500-1700 8SOP - uPB1502GR uPB1502GR uPB1502GR uPB1502GR(1) Mobile Comm.,2.0GHz,64 www.datasheetarchive.com/files/nec/search/mobile.html |
NEC | 17/11/1999 | 41.96 Kb | HTML | mobile.html |
| + transceiver 1995-05-25 FT 18 Frame Transfer CCD Image Sensor 1999-11-22 FT17N / FT17P 2/3 inch dual PNP switching transistor 1997-06-19 2N4124 2N4124 2N4124 2N4124 NPN general purpose transistor 1997-03-25 2N4126 2N4126 2N4126 2N4126 PNP general purpose transistor 1997-03-25 2N5087 2N5087 2N5087 2N5087 PNP general purpose transistor 1997-07-02 2N5088 2N5088 2N5088 2N5088 NPN 1995-06-16 74ALVT162344 74ALVT162344 74ALVT162344 74ALVT162344 2.5 V / 3.3 V 1-to-4 address driver with 30 Ohm termination resistors (3-State) 1998-06-30 74ALVT162731 74ALVT162731 74ALVT162731 74ALVT162731 2.5V/3.3V 1-to-4 address register/driver with 30 Ohm termination www.datasheetarchive.com/files/philips/discontinued/prunedlist-v2.html |
Philips | 16/06/2005 | 481.52 Kb | HTML | prunedlist-v2.html |
| -voltage transistors (2-7-97 ) BF689K BF689K BF689K BF689K: NPN 2 GHz wideband transistor (1-9-95 ) BF763 BF763 BF763 BF763: NPN 2 GHz wideband transistor (1-9-95 ) BF997 BF997 BF997 BF997: N-channel dual-gate MOS-FET (1-4-91 ) BFG17A BFG17A BFG17A BFG17A: NPN 3 GHz wideband transistor (12-9-95 ) BFG197 BFG197 BFG197 BFG197; BFG197/X BFG197/X BFG197/X BFG197/X; BFG197/XR BFG197/XR BFG197/XR BFG197/XR: NPN 7 GHz wideband transistor (13-9-95 ) BFG67W BFG67W BFG67W BFG67W; BFG67W/X BFG67W/X BFG67W/X BFG67W/X; BFG67W/XR BFG67W/XR BFG67W/XR BFG67W/XR: NPN 8 GHz wideband (25-3-97 ) 2N4126 2N4126 2N4126 2N4126: PNP general purpose transistor (25-3-97 ) 2N5087 2N5087 2N5087 2N5087 www.datasheetarchive.com/files/philips/discontinued/prunedlist-v1.html |
Philips | 14/02/2002 | 372.71 Kb | HTML | prunedlist-v1.html |