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Part Manufacturer Description Datasheet BUY
ISL6146AFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146DFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146CFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146AFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

fet ft 25 GHZ

Catalog Datasheet MFG & Type PDF Document Tags

transistor C5080

Abstract: transistor 2SC458 E (sat) 18 mV typ (at 30 mA) Ron 0.5 Q typ 2. Video Grade fT (GHz) Under 1.2 1.2 to 2.5 Amp , fT = 6 G Hz fT = 9 GHz fT = 9 G Hz 2SC5139 2SC5247 fT = 11 GHz f T = 13.5 GHz fT = 6 G Hz fT = 9 GHz fT = 9 GHz 2SC5137 fT = 10 GHz fT= 10.5 GHz 2SC5139 2SC5246 2SC5247 fT = 11 GHz fT = 12.5 GHz (5 mA) fT = 13.5 GHz G a A sF E T 2SC4537 2SC4901 2SC4593 2SC5051/(2SC4995) 2SC5139 fT = 6 GHz fT = 9 GHz fT = 9 GHz fT = 11 GHz HITACHI 15 Products at a Glance by Application
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C5137 C5140 C5246 C4965 C5247 A1052 transistor C5080 transistor 2SC458 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 3SK228 3SK239A 3SK309 3SK186 3SK295 3SK194

HAT1058C

Abstract: HAT2106G -6) CMPAK-6 HITACHI SMALL SIGNAL TRANSISTOR Gain Bandwidth Process fT (GHz) High-Frequency Bipolar , 2SC5700 LNA, buffer 2SC5812 fT (GHz) |S21| (dB) NF (dB) Package 13.5 (5 V/20 mA) 17.6 , Frequency (GHz) 0.8-1.5 1.5-2 VCO buffer VCO OSC Main Characteristics (typ) 2-4 fT , Current MPAK Gain band width Product fT (GHz) 15 2SC5773 10 2SC5772 5 0 1 10 20 50 , 80 fT (GHz) 8.5 10.8 Vce/Ic v /mA 5/20 5/50 Main characteristics |S21| Vce/Ic/f (dB
Hitachi Semiconductor
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HAT1062G HAT1058C HAT2106G HAT1068C HAT3016G Hitachi MOSFET SON3024 HAT1073S HAT1063M SON3024-8 ADE-A08-003Q

TGI7785-120L

Abstract: TA4029TU 2.5 fT = 7 GHz 5 40 150 125 MR fT = 10 GHz 2.9 1.5 VHFUHF , 85 ( 1) 125 03 fT = 10 GHz VHFUHF 5 25 85 ( 1) 125 04 fT = 12 GHz VHFUHF 6 40 85 ( 1) 125 08 fT = 6 GHz 2.5 30 85 ( 1) 125 , 550 MHz *: 2011/1 SCJ0004R () (Ta = 25°C) TO-92 125 08 fT = 6 GHz , 60 150 P8 fT = 25 GHz 3 10 30 150 P1 fT = 25 GHz UHFSHF 1.2 35
Toshiba
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TIM5867-15UL TIM6472-30UL TGI7785-120L TA4029TU MT3S11CT MT4S300T TA4029CTC MT4S300U 2SC2714 2SC5064 2SC5084 2SC5089 2SC5106 2SC5109

RFM70U12D

Abstract: 2SC3136 fT = 10 GHz VHFUHF 2.5 Q R VHFUHF 5 40 150 125 MR fT = 10 GHz , 5 15 85 ( 1) 125 03 fT = 10 GHz VHFUHF 5 25 85 ( 1) 125 04 , 85 ( 1) 125 09 fT = 7 GHz 2.5 30 85 ( 1) 125 0H fT = 11 GHz 5 , = 25°C) IC PC Tj (mA) (mW) (°C) 2.1 20 100 150 P8 fT = 24 GHz , 23 GHz 3 20 100 150 P8 fT = 25 GHz 3 10 100 150 P1 fT = 25 GHz
Toshiba
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MT3S106 2SC3136 2SC1923 RFM70U12D rfm03u3ct MT3S111 MT3S111P SCJ0004N 2SC2715 2SC2716 2SC3123 2SC5094 MT3S03A

small signal audio FET

Abstract: 3SK238 process BICMIC/BB FET series, low distortion, and low noise 0.5-µmDP-BiCMOS process fT 22GHz/5V Bip , Photos of Die fT=10GHz (LE=0.8 µm) Technical trend fT (GHz) 2SC5623 2SC5624 Gain Bandwidth , Application WS 2SC5545 MPAK-4 Wide-bandwidth amp. OK Characteristics High fT 12.6 GHz The fT-Ic , package lineup will be expanded and improved Type No. Package Main spec. fT = 27 GHz, PG = 19 dB, NF = 1.8 dB (f =1.8 GHz) fT = 28 GHz, PG = 18 dB, NF = 1.2 dB (f =1.8 GHz) New 2SC5623 CMPAK
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small signal audio FET 3SK238 g1 smd transistor BB303 low noise transistor cross dual transistor 6 pin SMD 327 2SK3290 2SK3287 2SK3288 2SK3289 2SK3378 2SK3348

ic isl 887

Abstract: 2SC5508 SPDT Si Tr. (fT = 25 GHz) SiGe HBT - - - PG2009TB PG2010TB - - Tr. - , 2SC5508 (NE662M04) - Si Tr. (fT = 25 GHz) - - - - PA8xx PC8128TB PC8151TB , fT = 25 GHz Tr. 6 - - - PA8xx - Tr. - - PC8106TB PC2763TB , . Si Tr. (fT = 25 GHz) Tr. 2SC5507 2SC5508 NESG2021M05/M16 NESG2031M05/M16 NESG3031M05/M14 , (NE662M04) PB1007K GaAs HJ-FET SiGe Tr. SiGe:C MMIC Si MMIC Si Tr. (fT = 25 GHz
Renesas Electronics
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NESG2031M05 ic isl 887 NE3514 SW SPDT NE3515S02 PG2179 NE5510279A NESG2031M16 NE55410GR NEM090303M-28 NEM090603M-28 NEM090853P-28

diode BB102

Abstract: RF TRANSISTOR 10GHZ low noise , supports low-noise highgain GHz operation 2in1 FET Off through SW FET 0.5-µmDP-BiCMOS process fT , 2SC5623 2SC5624 fT (GHz) Emitter length High fT silicon bipolar transistor Application High fT 27 GHz High|S21| 17dB Low Noise Figure and High Gain at 1.8GHz. NF=1.2dB, PG=16dB Typ (VCE , = 27 GHz, PG = 19 dB, NF = 1.8 dB (f =1.8 GHz) 2SC5624 CMPAK-4 fT = 28 GHz, PG = 18 dB, NF = , 10.0 5V, 5mA 2SC5246 2SC5080 fT(GHz) 2SC4994 2SC4926 2SC5050 2SC5545 SMPAK
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diode BB102 RF TRANSISTOR 10GHZ low noise Tv tuner Diagram LG RF VCO 9GHZ 10GHZ Transistor GaAs FET Low Noise NF 1.6dB 2SC4784F ADE-A08-003G

HITACHI SMD TRANSISTORS

Abstract: small signal audio FET NF=1.4dB BB101 to 305 BB501 BIC701 Off through SW FET 0.5-µmDP-BiCMOS process fT 22GHz/5V , (voltage control oscillator) (fT=3 to 13.5 GHz) SET TOP Box High-fT 27-GHz product was developed DBS , Photos of Die fT =10GHz (LE=0.8 µm) Technical trend fT (GHz) 2SC5623 2SC5624 Gain Bandwidth , MPAK-4 Wide-bandwidth amp. OK Characteristics High fT 12.6 GHz The f T-Ic characteristics are extended , will be expanded and improved Type No. Package Main spec. fT = 27 GHz, PG = 19 dB, NF = 1.8 dB
Hitachi Semiconductor
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HITACHI SMD TRANSISTORS hitachi small signal Small Signal Digital Transistors BB304 smd 015 BB405 equivalent 2SK3349 2SJ574 2SJ575 2SJ576 2SJ586 2SJ587

RF1119

Abstract: TZA3036 mA; f = 2.4 GHz VCE = 2 V; I C = 25 mA; f = 5.8 GHz VCE = 2 V; I C = 25 mA; f = 12 GHz fT (GHz , bra510 100 (33) 7th generation fT (GHz) (27) (26) (32) (25) (31) (30) 10 , SOT343F RF SOT343R 11 SiGeC 2 GHz 20dB 2 GHz 1.2dB 25 GHz 95 fF 1.4 LNB 1 LNA , 12 GHz PLL GaAs LNA 5V LNB 1.0 dB LNA 12 GHz 110-GHz fT SiGeC 13 dB 2.1 PLL , 1.8 GHz 0.4 dB 5.8 GHz 0.67 dB 1.8 GHz 27.8 dB 18 GHz fT > 100 GHz fMAX > 150 GHz SOT343F
NXP Semiconductors
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TFF1003HN TZA3036 UAF4000TS RF1119 lnb ku BF862 AM LNA UAA 1006 ic lnb BGU7003 BGU7004 BGU7005 TFF1006HN CGY888C

RFM70U12D

Abstract: 2SC3136 fT = 8 GHz VHFUHF 10 40 150 125 D fT = 10 GHz VHFUHF 2.5 2SC380TM , ) 125 03 fT = 10 GHz VHFUHF 5 25 85 ( 1) 125 04 fT = 12 GHz , 09 fT = 7 GHz 2.5 30 85 ( 1) 125 0H fT = 11 GHz 5 60 85 ( 1 , VHFUHF 3 10 30 150 P7 fT = 23 GHz UHFSHF 3 20 60 150 P8 fT = 25 GHz 3 10 30 150 P1 fT = 25 GHz UHFSHF 4 35 100 150 P2 fT =
Toshiba
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TGI8596-50 RFM70 TA4029 TA4032FT 2SK403 tim0910-4 SCJ0004O MT3S04A 2SC941TM 2SC5092 2SC5087R 2SC5087
Abstract: 5IDSS 30 25 P-1 dB Power at 1 dB Compression 12 GHz v DS = 8 V IDS =-6IDSS nD Drain Efficiency V DS = 8V ]DS =-6lDSS ft V DS =4V !DS = -51DSS 12 GHz 450 mW/mm 20 56 % 15 25 , 3V b s = 5 'DSS 8 GHz - 13.5 9.0 17 dB ft VDS =3V tos = '5IDSS GHz 2. Process HI2 , v ds dB +85*C = 3 V I d s =-2Id s s Ga ft Associated Gain at Fmjn dB +25°C V , building was designed and constructed to support up to 34,000 sq. ft. of m odular Class 100 semiconductor -
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MIL-STD-883 2010B MIL-883

1658 NEC

Abstract: SW SPDT Discrete Tr. 2SC5508 Si Bipolar Tr. (fT = 25 GHz) HJ-FET NE34018 NE38018 Low Noise GaAs FET , Tr. Type Name 2SC5508 Feature Si Bipolar Tr. (fT = 25 GHz) 2SC5761 SiGe Tr. HJ-FET , device list Block LNA Function Discrete Tr. Type Name 2SC5508 Feature fT = 25 GHz Tr , . 2SC5507 2SC5508 Si Bipolar Tr. (fT = 25 GHz) 1st Down-converter + 2nd Down-converter + OP , Si Bipolar Tr. (fT = 25 GHz) 2SC5509 D/C Si Bipolar Tr. (fT = 17 GHz) NESG2021M05
NEC
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NE52418 1658 NEC FRS transceiver SW-SPDT upc8112tb 2SC5288 discrete LNA D PX10020EJ08V0PF PG2022TB PG2024TQ

LNA ku-band

Abstract: ku-band pll lnb - 2.5 0.8- 6 10GHz ft 10GHz ft 21.5 21.5 15.1 17 19 10.5 10.4 1.8 9.8 1.9 13.4 1 to 8 , -41532 AT-32032 5/5 2.7/5 10 GHz ft 10 GHz ft 10.5 10.4 7 7.5 - 1.5 1.25 Si BJT , -32032 2.7/5 2.7/5 10 GHz ft 10 GHz ft 8.5 9 6.5 8 Recommended Parts in Bold. Notes: 1 , 10GHz ft 6 8 MiniPak SOT323/363/23/143 MiniPak SOT323/363/23 - 2.5 Si BJT, SOT323 , Si MMIC, SOT363 VCO AT-41532 AT-32032 5/5 2.7/5 10 GHz ft 10 GHz ft 10.5 10.4 7
Agilent Technologies
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ATF-58143 ATF-54143 LNA ku-band ku-band pll lnb microwave transmitter 10GHz AT-64020 micro-X ceramic Package lna fet 900-1700MHz MGA-53543 MGA-52543 ATF-531P8 MGA-82563

FET K161

Abstract: Transistor C2216 *2MT4S102U *2MT4S102T *2MT4S104U *2MT4S104T fT = 25 GHz NF (Typ.) 1 * : SiGe 2 , V f = 2 GHz 1.4 (dB) 0 1 NF fT (GHz) 35 Ta = 25°C *: 1.2 MT4S100T , PC Cob 2 S21e (Typ.) fT (Typ.) Cre VCE (pF) IC (GHz) (V) (mA , ] VCEO IC PC hFE tr (V) Q1 fT Typ. VCE 5 (mA) (mW) 25 , tr (V) Q1 fT Typ. VCE 5 (mA) (mW) 25 MT6L62AE 100 IC NF Typ. VCE
Toshiba
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FET K161 Transistor C2216 Transistor k161 k192a k161 jfet Transistor C2668 050106DAD1 2SC382TM 2SC2114 2SK2497 2SC384 2SC2115

Prospects for a BiCFET III-V HBT Process

Abstract: kopin Beta_max Ref (Ohms) Cjc (fF) @0V Cje (fF) @0V fT (GHz) @ 0.25 mA/μm2 & 1.5V MSG/MAG (dB) @ 900 MHz , sub-threshold â'bumpâ' in the current. This is most likely due to the gate Schottky landing 30 25 ft, A ft, B ft, C 20 Cut-off Frequency (GHz) demonstrated pFETs on different wafers from the same , ) are routinely available in silicon processes such as BiCMOS. While complementary III-V FET processes have been demonstrated [1,2], the only complementary HBT/FET demonstrations were [3,4] with the only
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Prospects for a BiCFET III-V HBT Process kopin

UAA 1006

Abstract: UXA23465 ) bra510 100 (33) 7 th generation fT (GHz) (27) (26) (32) (25) (31) (30) 10 , BFG425W BFG424F BFG480W SOT343F BFU725F 2 GHz 20 dB 2 GHz 1.2 dB 25 GHz 95 fF RF 10 , BFG410W BFG410W BGA2003 6 RF BFU725F SiGeC (fT >100 GHz / fMAX >150 GHz) SOT343F NPN , dB 1.8 GHz 27.8 dB / 18 GHz 10 dB 22 RF (fT >100 GHz / fMAX >150 GHz) SOT343F NPN , SOT343 SOT343 SOT343F SOT343 SOT343 SOT343F = RF 10 FT (GHz) 1 1.6 2.3 2.8 4 4 5
NXP Semiconductors
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TEF6860HL UXA23465 UXA23476 UAF3000 UXA23466 UAF4000 TEF6862HL

2SK2396

Abstract: PC2763 1002500 LINS = 0.55 dB, ISL = 25 dB, Pin(1 dB) = 32 dBm MIN.@f = 1 GHz µPG138GV SPDT 0 , 26 2900 GP = 15 dB, NF = 6.5 dB, Po = 10 dBm@f = 1 GHz µPC2709T 5 25 2300 GP = 23 dB, NF = 5 dB, Po = 11.5 dBm@f = 1 GHz µPC2709TB 5 25 2300 GP = 23 dB , 5 25 2700 GP = 23 dB, NF = 6 dB, Po = 6.5 dBm@f = 1 GHz µPC2776TB BS 5 25 , 0.001 (MHz) 9000 9000 9000 9000 fT = 9 GHz fT = 9 GHz fT = 9 GHz fT = 9 GHz 14 µPA101 µPA102
NEC
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PC2763 PC3210 PC2711 2SK2396 pc1658 ne27283 2SC3545 2SC3357 X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA

AWS01

Abstract: aft-186 covering the full 6 to 18 GHz frequency band. IIP PHEMT GaAs FET devices and rugged hybrid construction , otherwise noted) Key: +25°C +100 C ' -54°C g a in GAIN 10 12 14 16 Frequency, GHz , What mL'HÆ HEWLETT PACKARD Avantek Products General Purpose GaAs FET Amplifier Series 6 to 18 GHz Technical Data AFT 186 X XX U S eries F eatu res · L ow C o st · E x c e lle n t N o ise F , com pensation and selected gain levels. Perform ance is guaranteed at 25°C. This series consists of
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AWS01 aft-186

pin diode gamma detector

Abstract: Tuning Varactors . 97 GaAs FET SWITCHES & ATTENTUATORS SPST SWITCHES DC-2.5 GHz MATCHED. 102 SPDT SWITCHES DC-2.5 GHz REFLECTIVE. 104 DC-2.5 GHz HIGH POWER POSITIVE CONTROL. 106 DC-3 GHz REFLECTIVE. 108 0.7-2 GHz MATCHED WITH INTEGRAL DRIVER. 110 DC-2.5 GHz MATCHED , .15 DIVERSITY SWITCHES DC-2 GHz HIGH POWER (4 VOLTAGE
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pin diode gamma detector Tuning Varactors GaAs p-i-n diodes RF limiter PIN diode Microwave zero bias detector diodes 10 GHz gunn diode MA4T645XX MA4T644XX MA4T6365XX

M 16100 39 2 1019

Abstract: 1S121 Characteristics (25°C) Test condition: f = 4 GHz, vds= iov, id*=yjd* Part No. HWC27NC HWC30NC HWC34NC NC , 9.5 9.0 3-8 HEXAWAVE Hexawave, Inc. L-Band Power GaAs FET Chip Description The , Characteristics (25°c) Test condition: f=2.4GHz, vds=iov, id ^ m s GidB (Typ.) dB 18.5 15 0 14.5 14.0 13.5 , HSXAWAVS Hexawave, Inc. HWC27NC C-Band Power FET Non-Via Hole Chip Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VD S =10V, lD S =200mA GHz 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50
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M 16100 39 2 1019 1S121 IN 5406 F24G HWL26YC HWL26NC HWL27NC HWL30NC HWL34NC
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