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LTM4600DCM#PBF Linear Technology IC DC/DC UMODULE 10A 104-LGA visit Linear Technology - Now Part of Analog Devices
LT1581CT7#06PBF Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature: Commercial visit Linear Technology - Now Part of Analog Devices
LT1581CT7-2.5#06PBF Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices
LT1581CT7#PBF Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTM4600IV#2DHPBF Linear Technology LTM4600 - 10A High Efficiency DC/DC µModule; Package: LGA; Pins: 104; Temperature: Industrial visit Linear Technology - Now Part of Analog Devices
LT1581CT7-2.5 Linear Technology LT1581 - 10A, Very Low Dropout Regulator; Package: TO-220; Pins: 7; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

fet 500v 10A

Catalog Datasheet MFG & Type PDF Document Tags

IRF9210

Abstract: darlington NPN 600V 8a transistor IRF730 USE IRF730 FET, 400V, 0.55R, 10A, 125W, N-CH, TO-220 USE IRF740 USE IRF740 USE IRF740 FET, 500V, 3.OR, 2.5A, 50W, N-CH, TO-220 USE IRF820 USE IRF820 USE IRF820 FET, 500V, 1.5R, 4.5A, 75W, N-CH, TO-220 USE IRF830 USE IRF830 USE IRF830 FET, 500V, 0.85R, 8.0A, 125W, N-CH, TO-220 USE IRF840 USE IRF840 USE IRF840 , , 0.55R, 5.5A, 40W, N-CH, TO-220F USE IRFS740 USE IRFS740 USE IRFS740 FET, 500V, 1,5R, 3.0A, 35W, N-CH, T0-220F USE IRFS830 USE IRFS830 USE IRFS830 FET, 500V, 0.85R, 4.5A, 40W, N-CH, TO-220F USE IRFS840 USE IRFS840
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KSH117-1 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088

fet 500v 10A

Abstract: 130NC are downloaded as Acrobat PDF files. Fet Products PRODUCT IRFM360 IRFM360-JQR-B Polarity N-Channel , downloaded as Acrobat PDF files. Fet Products PRODUCT IRFM044 IRFM044-JQR-B Polarity N-Channel N-Channel , downloaded as Acrobat PDF files. Fet Products PRODUCT IRFM054 IRFM054-JQR-B Polarity N-Channel N-Channel , downloaded as Acrobat PDF files. Fet Products PRODUCT IRFM240 IRFM240-JQR-B Polarity N-Channel N-Channel , as Acrobat PDF files. Fet Products PRODUCT IRFM340 IRFM340-JQR-B Polarity N-Channel N-Channel
Semelab
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fet 500v 10A 130NC IRFY912 IRFY9120 IRFY9120C IRFY9120C-JQR-B IRFY9120-JQR-B
Abstract: 3) RFV10N50BE 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs A g s 1995 uut Features Package â'¢ 10A,500V â'¢ JEDEC STYLE 5 LEAD TO-247 rDS(ON) = 0 .4 8 0 Q , . Control FET Gate Source V o lta g e , . Control FET Avalanche Current. Control FET Single Pulse Avalanche R a tin g . -
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V10N50BE

IFRZ44

Abstract: IRFZ43 SSH10N70 FET, 700V, 1.2R, 10A, 150W, N-CH, TO-3P USE SSH10N70 SSH10N70A FET, 500V, 0.35R, 20A, 150W, N-CH , IRF740 IRF741 IRF742 1RF743 FET, 400V, 0.55R, 10A, 125W, N-CH, T0-220 USE IRF740 USE IRF740 USE IRF740 IRF820 IRF821 IRF822 IRF823 FET, 500V, 3.0R, 2.5A, 50W, N-CH, T0-220 USE IRF820 USE IRF820 USE IRF820 IRF830 IRF831 IRF832 IRF833 FET, 500V, 1.5R, 4.5A, 75W, N-CH, T0-220 USE IRF830 USE IRF830 USE IRF830 IRF840 IRF841 IRF842 IRF843 FET, 500V, 0.85R, 8.0A, 125W, N-CH, T0-220 USE
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IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT Transistor mc7812ct 2N4400 2N4402 2NS088 2NS551 2N6S15 IRF510

TH 2190 mosfet isolated

Abstract: TH 2190 mosfet 100 µA VIN=5V, V+=500V RDS(ON) Drain-to-Source On Resistance - 2.2 2.7 ID=1.0A, VDD=15V ID=1.0A, VDD=15V, TJ=150°C VFM Diode Forward Voltage Drop - 5.5 - - 0.87 1.0 - 0.76 - Units Conditions V IF=1.0A IF=1.0A, TJ=150°C Recommended , Applications 3 Phase Inverter HIC 2A, 500V Description International Rectifier's IRAM336-025SB is a , @ TC=25°C Maximum Peak Current (tp
International Rectifier
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AN-1049 TH 2190 mosfet isolated TH 2190 mosfet DN 98-2a, application note AN-1044 AN-1044 marking R1E PD-97277 IRAM136-025SB

V10N50BE

Abstract: AN7254 RFV10N50BE S E M I C O N D U C T O R 10A, 500V, Fast Switching N-Channel Enhancement-Mode Power MOSFETs August 1995 Features Package · 10A, 500V JEDEC STYLE 5 LEAD TO-247 · rDS , = 400V, ID = 10A, RL = 40 VDS = 25V, VGS = 0V, f = 1MHz Control FET Specifications LIMITS , VGS Control FET Gate Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS Control FET Avalanche
Harris Semiconductor
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AN7254 AN7260 ISO9000 1-800-4-HARRIS

S 170 MOSFET TRANSISTOR

Abstract: 600v 20a IGBT RDS-ON IGBT · 250V 1000V MOSFET IGBT IGBT MOSFET · 80% 500V MOSFET 400V , 13 N FET FET N MOSFET FET - 10 Q1 Q2 MOSFET DS00898A_CN 6 , Microchip Technology Inc. AN898 11 IC IC FET/IGBT Q2 Q1 / VBIAS D1 Cboot Q2 Q1 , Microchip Technology Inc. MOSFET IGBT MOSFET IGBT / 500V 20A 600V 20A MOSFET IGBT , VGS ID = 250 µA IDSS - - - - - 25 250 µA VDS = 500V VGS = 0V VDS = 400V
Microchip Technology
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S 170 MOSFET TRANSISTOR 600v 20a IGBT igbt 400V 20A MOSFET 1000v 30a igbt 500V 15A mosfet 600V 20A
Abstract: RLOAD = 1.0â' IOUT, 4A/DIV 3 IOUT, 0.5A/DIV 3 VIN, 5V/DIV 4 4 CH1 5.00V CH2 5.00V M 20.0␮s CH3 120mV CH1 5.00V CH3 50.0mV TPC 10. Fast Current-Limit Response B W CH2 5.00V M 50.0␮s CH1 CH4 5.00V VFAULT 2.2V TPC 13. Switch Turn-On Time VON T VFAULT , MAIN FET IN (2.7V TO 5.5V) OUT MIRROR AMPLIFIER MIRROR FET ON 22␮F 0.1␮F SET , 16-Lead QSOP Package: θJA = 50°C/W, θJC = 10°C/W ORDERING GUIDE Model Temperature Range Analog Devices
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ADM869L RQ-16 C01037 MO-137AB

12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM

Abstract: 300w subwoofer amplifier PCB layout BBM setting. Tripath recommends using an R of 10 when the gate charge (Qg) of the output FET is less , information on output FET selection as well as Tripath application notes "FETs ­ Selection and Efficiency , leads, as close as possible to the FET. Only Schottky diodes should be used here due to t eir very low , FET drivers on the TA0102A. This supply must track the Vsneg rail, and so, for simplicity, this , MUR120 200V L1 11.3UH 10A 10% 2 2 LED1 3 R5 33 1W 5% NS D2 MUR120 200V
Tripath Technology
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12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM 300w subwoofer amplifier PCB layout subwoofer PREAMP circuit diagram 150w subwoofer amplifier circuit diagram 300W subwoofer CIRCUIT DIAGRAM SCHEMATIC 300w power amplifier stereo EB-TA0102 J356-ND 24AWG 18AWG

500w subwoofer amplifier circuit diagram

Abstract: 500w audio amplifier circuit diagram using an R of 10 when the gate charge (Qg) of the output FET is less than 70nC and G 5.6 when the Qg , evaluation board are ST STW38NB20 MOSFETs. The TA0103A data sheet contains information on output FET , to the FET. Only Schottky diodes should be used here due to t eir very low forward voltage drop and , to provide the voltage rail for the low side FET drivers on the TA0103A. This supply must track the , 1W 5% V5 D1 MUR120 200V L1 11.3UH 10A 10% 2 2 LED1 3 R5 5.6 1W 5
Tripath Technology
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EB-TA0103 500w subwoofer amplifier circuit diagram 500w audio amplifier circuit diagram 500w power amplifier pcb diagram schematic diagram inverter 500w USING MOSFET schematic diagram PC Power supply 500w 500w audio power amplifier circuit diagram J151-ND J152-ND
Abstract: switching power supply. - Rectifier bridge - Ultrafast platinum output diode - 500V .1â"¦ Max. FET , Capacitance Ciss Gate Resistor RG Junction Temperature Thermal Resistance FET Tj Rthjc , Voltage D5 Tj Rthjc Conditions1 VDS = 500V, VGS = 0V 7720-X -1 -2 -3 IDS = 28A, VGS = , ,-3 VR = 600V, t = 150°C -1,-2,-3 IF = 1.0A, di/dt = 100A/µs -1,-2,-3 IF = 25A, di/dt = 100A , Filter 25A 10â"¦ Dotted Line denotes â'" BI Model 7720 and associated pins. Pin 1: AC 1 Pin 2 -
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BUZ45B

Abstract: TA17435 BUZ45B Semiconductor Data Sheet 10A, 500V, 0.500 Ohm, N-Channel Power MOSFET October 1998 File Number 2259.1 Features · 10A, 500V [ /Title This is an N-Channel enhancement mode , transistors requiring high speed and low gate drive power. (10A, · Linear Transfer Characteristics This type can be operated directly from integrated circuits. 500V, · High Input Impedance 0.500 Formerly , . FET) G /Author () S /Keywords (Harris SemiPackaging conducJEDEC TO-204AA tor, NChannel Power
Harris Semiconductor
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BUZ45 TA17435 BUZ-45B 500V N-Channel MOSFET ID 29A transistor BUZ45

fet 500v 10A

Abstract: E67349 TLP3110 LED+MOS FET TLP3110 : mm TLP3110 MOS FET MOS FET 350mA , 1.2 IOFF =10A 0.2 mA 2 2009-02-12 TLP3110 (Ta = 25°C) CS VS = 500V, R.H. < 60% = VS = 0, f = 1MHz RS 0.8 pF , TLP3110 I F Ta I ON Ta 60 400 MOS FET I ON (mA) I F (mA) 50 40 30 20 10 , VF I ON (mA) MOS FET I F (mA) 1 0.1 0.6 0.9 1.2 1.5 IF =
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E67349 1500V UL1577 11-5H1

fet 500v 10A

Abstract: CVR6 TLP3111 LED+MOS FET TLP3111 : mm TLP3111 MOS FET MOS FET · , ION= 100mA 4 mA ION= 100mA, IF= 5mA 12 20 IOFF= 10A 0.2 , = 500V, R.H. 60% VS= 0, f= 1MHz 0.8 pF 5×10 AC1 10 10 , Ta I ON Ta 60 150 MOS FET I ON (mA) I F (mA) 50 40 30 20 10 0 -20 0 , (mA) MOS FET I F (mA) 1 100 I ON VON 10 0.1 0.6 0.9 1.2
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CVR6

11-5B2

Abstract: EN60065SS TLP224G TLP224G : mm TLP224G MOS FET 4 DIP MOS FET FCCPart68 · (1a ) · : 350V() · LED : 3mA() · : 120mA() · : 150~300mA · : 35() · : 2500Vrms() · SEMKO : SS EN60065SS EN60950 · BSI : BS EN60065 , 1 3 mA IFC IOFF= 10A 0.1 0.4 mA ILIM IF=5mA, VDD=5V, t , VS= 0, f= 1MHz VS= 500V,R.H.60% 5×10 AC1 10 10 14 BVS AC1
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11-5B2 2500V EN60950-1
Abstract: 30MHz 0,05% Max 5ppm/°C 10ppmMax 500^V Max 2.5pV/°C 50pAMax 40pAMax 1pA/°C 100dB 94dB The LT1102 is the first fast FET input instrumentation am­ plifier offered in the low cost, space , input bias and offset currents, 200/A/ offset volt­ age. Unlike other FET input instrumentation , currents do not double with every 10°C rise in temperature. Indeed, at 70°C ambient temperature the -
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LT11Q2

ACK34

Abstract: FET differential amplifier circuit ANALOG DEVICES Fast Settling, Wideband, 100mA Output, FET Amplifiers MODELS 50 & 51 FEATURES , are ultra fast, wideband differential FET amplifiers, designed for applications requiring fast , product, slew rate of 500V//JS and output current of ±100mA from dc to 8MHz. Model 51 is also available , '¢ Slew Rate, Noninverting 400V/ps, min * 300V//is, min * Slew Rate, Inverting 500V//is, min â'¢ 400V , ±2mV * INPUT BIAS CURRENT Initial., ® +25°C 0, 0-2 nA max * vs. Temperature Double/+10°C vs. Supply
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ACK34 FET differential amplifier circuit AD 51A 51a Potentiometer weigh amplifier 50J/K 100MH AC1034

diode 400V 4A

Abstract: isolators 415v -11 / MBA-22 Ue 690V Ith 10A MCA-10 / MCA-01 Ue 690V Ith 10A MCAH-10 / MCAH-01 Ue 690V Ith 25A , ) Ue 690V Ith 10A Contacts 45 Please enlarge on your new range of ultra-compact contactors , -11 / MRA-22 Ue 690V Ith 10A I am also interested in (please tick) MC-E220 VG-MC/250 MC10-MC40 , LEDs & 7 segment displays OCMOS FET photocouplers PCB Terminal blocks Nature of business , 230VkW 380/400V kW 500V kW 660/690V kW Auxillary contacts Coil AC operated See reverse for
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diode 400V 4A isolators 415v star delta plc plc scada and hmi relay 5a 250v ac 30v dc DC MOTOR 12-24v MC10-S MC14-S MC18-S MC22-S MC24-S MC32-S

motor driver full bridge 10A 100V

Abstract: 12V 20A brushless motor T E C H N O L O G Y (800) 546-APEX (800) 546-2739 PRELIMINARY FEATURES · 10V TO 500V , to 85°C 500V 16V 40A 20A TDB ­0.3V to Vcc +0.3 ­.03V tp 5.35V 300°C 150°C ­65 to 150 , EFFICIANCY, 10A SWITCHING FREQUENCY CURRENT, continuous, BC10 CURRENT, peak, BC10 CURRENT, continuous , Source of the N-rail FET in half bridge 1 Source of the N-rail FET in half bridge 2 Source of the N-rail FET in half bridge 3 Commutation sensor input 1 Commutation sensor input 2 Commutation sensor
Apex Microtechnology
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motor driver full bridge 10A 100V 12V 20A brushless motor DC SERVO MOTOR closed loop pwm speed control 12v DC SERVO MOTOR CONTROL circuit motor driver full bridge 10A motor driver full bridge 20A BC10/BC20 BC10/BC20U

PWM DRIVE control 100V 20A

Abstract: DC SERVO MOTOR closed loop pwm speed control ://WWW.APEXMICROTECH.COM (800) 546-APEX (800) 546-2739 PRELIMINARY FEATURES · 10V TO 500V MOTOR SUPPLY AT 20 A , prodlit@apexmicrotech.com BC10/BC20 BC10 ABSOLUTE MAXIMUM RATINGS SPECIFICATIONS BC20 500V 16V 40A 20A TDB ­0.3V , EFFICIANCY, 10A SWITCHING FREQUENCY CURRENT, continuous, BC10 CURRENT, peak, BC10 CURRENT, continuous, BC20 , the N-rail FET in half bridge 1 Source of the N-rail FET in half bridge 2 Source of the N-rail FET in , current condition. HCMOS 1 enables power FET operation The PWM frequency may be lowered by installing a
Apex Microtechnology
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PWM DRIVE control 100V 20A BC10 PWM H bridge servo motor controller BC20 automatic change over circuit diagram of 2 motors H BRIDGE MOTOR DRIVING circuit diagram
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