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Part : FDB6030L Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 22,487 Best Price : $0.54 Price Each : $0.67
Part : FDB6030L Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 3,200 Best Price : $0.8195 Price Each : $0.8195
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fdb6030L Datasheet

Part Manufacturer Description PDF Type
FDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effec Original
FDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
FDB6030L Fairchild Semiconductor N channel logic level enhancement mode field effect transistor Original
FDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
FDB6030L_NL Fairchild Semiconductor N-Channel Logic Level PowerTrench MOSFET Original

fdb6030L

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: FDP6030L/FDB6030L N-Channel Logic Level PowerTrench® MOSFET General Description Features , Marking Device Reel Size Tape width Quantity FDB6030L FDB6030L 13'' 24mm 800 , FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L August 2003 Symbol TA = 25°C unless otherwise , Cycle < 2.0% FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L Electrical Characteristics FDP6030L/FDB6030L Typical Characteristics 1.8 180 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE Fairchild Semiconductor
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FDP6030L FDP6030L/FDB6030L
Abstract: FDP6030L/FDB6030L 30V N-Channel PowerTrench® MOSFET General Description Features These , Size Tape width Quantity FDB6030L FDB6030L 13'' 24mm 800 units FDP6030L FDP6030L Tube n/a 45 ©2002 Fairchild Semiconductor Corporation FDP6030L/FDB6030L Rev D(W) FDP6030L/FDB6030L April 2002 Symbol T A = 25°C unless otherwise noted Parameter , to 75A. 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0% FDP6030L/FDB6030L Rev D(W Fairchild Semiconductor
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NDP6030L/NDB6030L
Abstract: 10 Q1 3 FDB6030L G N D P 1 0 4 IFB VFB 5 RSENSE VOUT + 2 G N D P 1 1 L2 R3 1 3 Q1 FDB6030L COUT D2 U1 RC5051 C5 0.1uF Rev. 1.0.0 , RSENSE 5.8mW, Constantin Wire Resistor 10 SS32 1 D1 3A Schottky Diode 11 FDB6030L , FDP6030L/ FDB6030L 13.5 mW 20 mW IRL3103 $$ $0.40-$0.45 FDP6035L/ FDB6035L 11 mW , Case Temp1 Upper MOSFET PD Option 3 Option 4 FDB7030L FDB6030L FDB6030L FDB603AL Fairchild Semiconductor
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6MV1500GX capacitor 1500MF 6.3v FDP7030L 10KW Klamath FDP603AL FDP6035L 10MV1200GX 1/10W 300MH AB00000003
Abstract: FDB6030L BVdss(V) Id = 250(xA 36.2 37.3 34.0 Id = 250(xA 39.8 38.6 Vth(V) Id = 250^A 1.57 1.82 1.56 , Parameters - Gate Charge Parameter Condition GFB70N03 HUF76139P3 FDB7030BL Condition GFB50N03 FDB6030L , Capacitance Parameter Condition GFB70N03 HUF76139P3 FDB7030BL GFB50N03 FDB6030L Condition GFB70N03 HUF76139P3 FDB7030BL GFB50N03 FDB6030L Ciss (pF) Coss (pF) Vds = 15V Crss (pF) 3133 2553 2180 , GFB70N03 HUF76139P3 FDB7030BL GFB50N03 FDB6030L Roja (°C/W) 54 47 51.5 56.5 51 RaJA (°C/W) Condition: 99 -
OCR Scan
70N03 50n03 6030L 70N03 P transistor Comparison Tables HIP6303
Abstract: =4.5 V. Improved replacement for NDP6030L/FDB6030L. Lower gate charge ( 46 nC Max.). Lower CRSS (175 pF , FAIRCHILD SEM ICONDUCTO R m November 1997 PR E LIM IN A R Y FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density , otherwise noted FDP6Û30L 30 ±20 52 156 75 0.5 -65 to 175 W W /'C ^C FDB6030L Units V V A Parameter -
OCR Scan
NDP6030L/FDB6030L
Abstract: . The FDB6030L MOSFETs recommended above for the low-side MOSFETs have a body diode forward voltage of , Signal Diode 6.2V +5%, 1W Zener Diode 8A, 35V Schottky Diode FDB7030L FDB6030L Fairchild , 1 D2 D3 20V, 1/2A Schottky Diode 8A, 35V Schottky Diode FDB6030L Fairchild 3 Q1 Fairchild Semiconductor
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AB-18 AN-53 MCH215A101JK MCH212F104ZP MBRD835L C1213 aluminum capacitor C1521 ceramic capacitor 100nF 500MH EXC-ELDR35V 16MV820GX
Abstract: .1uF R11 R2 RT 3K 19 BOOT VID1 VID2 VID3 VID4 COMP C14 1uF Q3 FDB6030L , Q4 FDB6030L 10 13 R13 C3 390pF C17­22 6 x 1500uF LGATE C4 6.8nF .1uF D1 , Q3­4 Fairchild FDB6030L 2 N-Channel MOSFET R1 Any 1 10 R2 Any 1 Fairchild Semiconductor
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RC5055 RC5055M sanyo 1500uF 16V capacitor c911 C-1722 15000uf SANYO 1500uF 16V 100KH DS30005055
Abstract: PAIRCHII-D M ICDNDUCTQ R t m April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These , Drain Current - Continuous - Pulsed FDP6030L 30 ±20 52 156 75 0.5 -65 to 175 FDB6030L Units V V -
OCR Scan
26AVG LD26 P6030L
Abstract: RCHILD MICQNDUCTDR tm April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are , FDB6030L Units ^dss Drain-Source Voltage 30 V ^gss Gate-Source Voltage - Continuous ±20 V "d Drain -
OCR Scan
fdb fairchild
Abstract: April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , ±20 V ID Drain Current - Continuous 52 A - Pulsed FDB6030L Units 156 TJ Fairchild Semiconductor
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S1230
Abstract: FDB6030L L1 10uH R2 4.7 D2 MBRB1545CT R1 3.3V 0.01 C4, C5 2 x 1500uF 6 5 65-5032-03 , -263AB Schottky Rectifier 1 Q1 Fairchild FDB6030L TO-263AB N-Channel MOSFET 1 U1 Fairchild Semiconductor
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RC5032 RC5032M 10mm ldr 20mm ldr 2512 resistor LDR 10mm capacitor 1200uf 16v 200KH DS30005032
Abstract: BOOT VID1 VID2 VID3 VID4 COMP C14 1uF Q3 FDB6030L 18 6 C13 1uF C15 1uF , RC5055 9 L2 PHASE 20K C16 .1uF R15 7.5K +Vo 1.3uH Q4 FDB6030L 10 13 , Q2 Motoraola 2N6394 1 SCR Q3­4 Fairchild FDB6030L 2 N-Channel MOSFET R1 Fairchild Semiconductor
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NDB4050 mosfet B 1566 MBRS320 C1722 6MV270GX transistor c911 RC5055G
Abstract: April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , ±20 V ID Drain Current - Continuous 52 A - Pulsed FDB6030L Units 156 TJ Fairchild Semiconductor
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Abstract: VID1 VID2 VID3 VID4 COMP R10 30K R14 C20 12 C30 1uF Q3 FDB6030L UGATE R13 , FDB6030L 10 13 R5 C10 390pF D1 MBRS320 4.7 21 C4, C7, C11, C12, C22, C23 1500uF , MBRS320 DO-214AB Schottky Rectifier, 10A, 15V Q3, Q4 2 Fairchild FDB6030L TO Fairchild Semiconductor
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R1378 SR 0805 X7R capacitor resistor 220 1W 2T602 T50 scr
Abstract: . L2 Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 , Inductor L2 Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 , FDP6030L or FDB6030L 2 N-Channel MOSFET (TO-220 or TO-263) RDS(ON) = 20m @ VGS = 4.5V See Note , ~ 2m Q1-2 Fairchild FDP6030L or FDB6030L 2 N-Channel MOSFET (TO-220 or TO-263) RDS(ON , example, Figure 6 shows the typical characteristic of the DC-DC converter circuit with an FDB6030L Fairchild Semiconductor
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RC5052 RC5052M 845 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram PC 845 MOTHERBOARD CIRCUIT diagram ecuv1h104zfx ECU-V1H104ZFX FDB6030L 1 N-Channel MOSFET DS30005052
Abstract: Q1 Fairchild FDP6030L or FDB6030L 1 N-Channel MOSFET (TO-220 or TO-263) f^DS(ON) = , Any 1 1,3pH, 20A Inductor DCR ~ 2 m Q Q1 Fairchild FDP6030L or FDB6030L 1 , . Q1-2 Fairchild FDP6030L or FDB6030L 2 N-Channel MOSFET (TO-220 or TO-263) ^D S (O N , example, Figure 5 shows the typical characteristic of the DC-DC converter circuit with an FDB6030L -
OCR Scan
DIODE 25PH 200 RC5057 RC5057M DS30005057
Abstract: Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 , FDB6030L 1 N-Channel MOSFET (TO-220 or TO-263) RDS(ON) = 20m @ VGS = 4.5V See Note 2. Q2 , Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1-2 Fairchild FDP6030L or FDB6030L 2 , circuit with an FDB6030L high-side MOSFET (RDS = 20m maximum at 25°C * 1.25 at 75°C = 25m) and a 8.2K RS Fairchild Semiconductor
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PC 845 MOTHERBOARD VOLTAGE diagram 624K Fairchild 1N4148
Abstract: FDB6030L Fairchild FDP7030BL or FDB7030BL Any Any Any Any Any Fairchild RC5057M Quantity 1 2 3 * * 1 , 10MV1200GX Sanyo 6MV1500GX Fairchild MBRD835L Fairchild 1N4148 Any Any Fairchild FDP6030L or FDB6030L , Fairchild FDP6030L or FDB6030L Any Any Any Any Any N/A Fairchild RC5057M Quantity 1 2 3 3 8 1 Optional 1 2 , an example, Figure 5 shows the typical characteristic of the DC-DC converter circuit with an FDB6030L Fairchild Semiconductor
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1M4148 PC 845 MOTHERBOARD CIRCUIT diagram PC
Abstract: Sanyo 10MV1200GX Sanyo 6MV1500GX Fairchild MBRD835L Any Any Fairchild FDP6030L or FDB6030L Fairchild , 6MV1500GX Fairchild MBRD835L Any Any Fairchild FDP6030L or FDB6030L Fairchild FDP7030BL or FDB7030BL Any Any , 6MV1500GX Fairchild MBRS320 Any Any Fairchild FDP6030L or FDB6030L Any Any Any Any N/A Fairchild RC5057M 1 1 , typical characteristic of the DC-DC converter circuit with an FDB6030L high-side MOSFET (RDS = 20m maximum Fairchild Semiconductor
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845 intel chipset motherboard circuit capacitor 100nf 50v philips Power MOSFET Selection Guide
Abstract: Fairchild FDP6030L or FDB6030L 1 N-Channel MOSFET (TO-220 or TO-263) RDS(ON) = 20m @ VGS = 4.5V , 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 N-Channel MOSFET (TO , Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1-2 Fairchild FDP6030L or FDB6030L 2 , FDB6030L high-side MOSFET (RDS = 20m maximum at 25°C * 1.25 at 75°C = 25m) and a 8.2K R5. 3.5 ESR = Fairchild Semiconductor
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Abstract: DO-214AB TO-263AB TO-220 2 3 Optional MBRS320 FDB6030L 2N6394 Schottky Rectifier, 3A , D1 Q1, Q2 Fairchild Fairchild MBRS320 FDB6030L Radial 10mmx20mm Wound Toroid , Table Manufacturer and Part # Fairchild FDP6030L Fairchild FDB6030L Fairchild FDP7030BL Fairchild Semiconductor
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flyback PCB layout sony 161A SONY sony flyback AN57 S320 NDB60 RC5052/RC5057
Abstract: unless otherw se note Parameter FDP6030L D rain C u rre n t - C o n tin u o u s FDB6030L -
OCR Scan
kd 998
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