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Part : FDB6030L Supplier : Fairchild Semiconductor Manufacturer : Rochester Electronics Stock : 22,487 Best Price : $0.54 Price Each : $0.67
Part : FDB6030L Supplier : Fairchild Semiconductor Manufacturer : Chip1Stop Stock : 3,200 Best Price : $0.8094 Price Each : $0.8094
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fdb6030L Datasheet

Part Manufacturer Description PDF Type
FDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effec Original
FDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original
FDB6030L Fairchild Semiconductor N channel logic level enhancement mode field effect transistor Original
FDB6030L Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan
FDB6030L_NL Fairchild Semiconductor N-Channel Logic Level PowerTrench MOSFET Original

fdb6030L

Catalog Datasheet MFG & Type PDF Document Tags

FDP6030L

Abstract: FDB6030L FDP6030L/FDB6030L N-Channel Logic Level PowerTrench® MOSFET General Description Features , Marking Device Reel Size Tape width Quantity FDB6030L FDB6030L 13'' 24mm 800 , FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L August 2003 Symbol TA = 25°C unless otherwise , Cycle < 2.0% FDP6030L/FDB6030L Rev E(W) FDP6030L/FDB6030L Electrical Characteristics FDP6030L/FDB6030L Typical Characteristics 1.8 180 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE
Fairchild Semiconductor
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FDP6030L FDP6030L/FDB6030L

FDB6030L

Abstract: FDP6030L FDP6030L/FDB6030L 30V N-Channel PowerTrench® MOSFET General Description Features These , Size Tape width Quantity FDB6030L FDB6030L 13'' 24mm 800 units FDP6030L FDP6030L Tube n/a 45 ©2002 Fairchild Semiconductor Corporation FDP6030L/FDB6030L Rev D(W) FDP6030L/FDB6030L April 2002 Symbol T A = 25°C unless otherwise noted Parameter , to 75A. 2. Pulse Test: Pulse Width < 300us, Duty Cycle < 2.0% FDP6030L/FDB6030L Rev D(W
Fairchild Semiconductor
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NDP6030L/NDB6030L

FDB6030L

Abstract: capacitor 1500MF 6.3v 10 Q1 3 FDB6030L G N D P 1 0 4 IFB VFB 5 RSENSE VOUT + 2 G N D P 1 1 L2 R3 1 3 Q1 FDB6030L COUT D2 U1 RC5051 C5 0.1uF Rev. 1.0.0 , RSENSE 5.8mW, Constantin Wire Resistor 10 SS32 1 D1 3A Schottky Diode 11 FDB6030L , FDP6030L/ FDB6030L 13.5 mW 20 mW IRL3103 $$ $0.40-$0.45 FDP6035L/ FDB6035L 11 mW , Case Temp1 Upper MOSFET PD Option 3 Option 4 FDB7030L FDB6030L FDB6030L FDB603AL
Fairchild Semiconductor
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6MV1500GX capacitor 1500MF 6.3v FDP7030L FDP6035L DC-DC converters 10W Klamath 10KW 10MV1200GX 1/10W 300MH AB00000003

50n03

Abstract: 6030L FDB6030L BVdss(V) Id = 250(xA 36.2 37.3 34.0 Id = 250(xA 39.8 38.6 Vth(V) Id = 250^A 1.57 1.82 1.56 , Parameters - Gate Charge Parameter Condition GFB70N03 HUF76139P3 FDB7030BL Condition GFB50N03 FDB6030L , Capacitance Parameter Condition GFB70N03 HUF76139P3 FDB7030BL GFB50N03 FDB6030L Condition GFB70N03 HUF76139P3 FDB7030BL GFB50N03 FDB6030L Ciss (pF) Coss (pF) Vds = 15V Crss (pF) 3133 2553 2180 , GFB70N03 HUF76139P3 FDB7030BL GFB50N03 FDB6030L Roja (°C/W) 54 47 51.5 56.5 51 RaJA (°C/W) Condition: 99
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OCR Scan
70N03 50n03 6030L 70N03 P transistor Comparison Tables HIP6303
Abstract: =4.5 V. Improved replacement for NDP6030L/FDB6030L. Lower gate charge ( 46 nC Max.). Lower CRSS (175 pF , FAIRCHILD SEM ICONDUCTO R m November 1997 PR E LIM IN A R Y FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor G eneral Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density , otherwise noted FDP6Û30L 30 ±20 52 156 75 0.5 -65 to 175 W W /'C ^C FDB6030L Units V V A Parameter -
OCR Scan
NDP6030L/FDB6030L

MCH215A101JK

Abstract: C1213 . The FDB6030L MOSFETs recommended above for the low-side MOSFETs have a body diode forward voltage of , Signal Diode 6.2V +5%, 1W Zener Diode 8A, 35V Schottky Diode FDB7030L FDB6030L Fairchild , 1 D2 D3 20V, 1/2A Schottky Diode 8A, 35V Schottky Diode FDB6030L Fairchild 3 Q1
Fairchild Semiconductor
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AB-18 AN-53 MCH215A101JK MCH212F104ZP MBRD835L C1213 aluminum capacitor C1521 ceramic capacitor 100nF 500MH EXC-ELDR35V 16MV820GX

sanyo 1500uF 16V capacitor

Abstract: c911 .1uF R11 R2 RT 3K 19 BOOT VID1 VID2 VID3 VID4 COMP C14 1uF Q3 FDB6030L , Q4 FDB6030L 10 13 R13 C3 390pF C17­22 6 x 1500uF LGATE C4 6.8nF .1uF D1 , Q3­4 Fairchild FDB6030L 2 N-Channel MOSFET R1 Any 1 10 R2 Any 1
Fairchild Semiconductor
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RC5055 RC5055M sanyo 1500uF 16V capacitor c911 C-1722 dc voltage regulator circuit using SCR 15000uf SANYO 1500uF 16V 100KH DS30005055

26AVG

Abstract: LD26 PAIRCHII-D M ICDNDUCTQ R t m April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These , Drain Current - Continuous - Pulsed FDP6030L 30 ±20 52 156 75 0.5 -65 to 175 FDB6030L Units V V
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OCR Scan
26AVG LD26 P6030L

fdb fairchild

Abstract: FDB6030L RCHILD MICQNDUCTDR tm April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are , FDB6030L Units ^dss Drain-Source Voltage 30 V ^gss Gate-Source Voltage - Continuous ±20 V "d Drain
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OCR Scan
fdb fairchild

S1230

Abstract: FDB6030L April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , ±20 V ID Drain Current - Continuous 52 A - Pulsed FDB6030L Units 156 TJ
Fairchild Semiconductor
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S1230

10mm ldr

Abstract: 20mm ldr FDB6030L L1 10uH R2 4.7 D2 MBRB1545CT R1 3.3V 0.01 C4, C5 2 x 1500uF 6 5 65-5032-03 , -263AB Schottky Rectifier 1 Q1 Fairchild FDB6030L TO-263AB N-Channel MOSFET 1 U1
Fairchild Semiconductor
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RC5032 RC5032M 10mm ldr 20mm ldr LDR 10mm 2512 resistor 1N5817 200KH DS30005032

C-1722

Abstract: transistor c911 BOOT VID1 VID2 VID3 VID4 COMP C14 1uF Q3 FDB6030L 18 6 C13 1uF C15 1uF , RC5055 9 L2 PHASE 20K C16 .1uF R15 7.5K +Vo 1.3uH Q4 FDB6030L 10 13 , Q2 Motoraola 2N6394 1 SCR Q3­4 Fairchild FDB6030L 2 N-Channel MOSFET R1
Fairchild Semiconductor
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transistor c911 6MV270GX MBRS320 NDB4050 mosfet B 1566 C1722 RC5055G

FDB6030L

Abstract: FDP6030L April 1998 FDP6030L / FDB6030L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly , ±20 V ID Drain Current - Continuous 52 A - Pulsed FDB6030L Units 156 TJ
Fairchild Semiconductor
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R1378

Abstract: FDB6030L VID1 VID2 VID3 VID4 COMP R10 30K R14 C20 12 C30 1uF Q3 FDB6030L UGATE R13 , FDB6030L 10 13 R5 C10 390pF D1 MBRS320 4.7 21 C4, C7, C11, C12, C22, C23 1500uF , MBRS320 DO-214AB Schottky Rectifier, 10A, 15V Q3, Q4 2 Fairchild FDB6030L TO
Fairchild Semiconductor
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R1378 SR 0805 X7R capacitor 2T602 resistor 220 1W T50 scr

intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: 845 MOTHERBOARD CIRCUIT diagram . L2 Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 , Inductor L2 Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 , FDP6030L or FDB6030L 2 N-Channel MOSFET (TO-220 or TO-263) RDS(ON) = 20m @ VGS = 4.5V See Note , ~ 2m Q1-2 Fairchild FDP6030L or FDB6030L 2 N-Channel MOSFET (TO-220 or TO-263) RDS(ON , example, Figure 6 shows the typical characteristic of the DC-DC converter circuit with an FDB6030L
Fairchild Semiconductor
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RC5052 RC5052M intel 845 MOTHERBOARD pcb CIRCUIT diagram 845 MOTHERBOARD CIRCUIT diagram INTEL 845 MOTHERBOARD CIRCUIT diagram PC MOTHERBOARD intel 845 circuit diagram PC 845 MOTHERBOARD CIRCUIT diagram ecuv1h104zfx DS30005052

DIODE 25PH 200

Abstract: Q1 Fairchild FDP6030L or FDB6030L 1 N-Channel MOSFET (TO-220 or TO-263) f^DS(ON) = , Any 1 1,3pH, 20A Inductor DCR ~ 2 m Q Q1 Fairchild FDP6030L or FDB6030L 1 , . Q1-2 Fairchild FDP6030L or FDB6030L 2 N-Channel MOSFET (TO-220 or TO-263) ^D S (O N , example, Figure 5 shows the typical characteristic of the DC-DC converter circuit with an FDB6030L
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OCR Scan
DIODE 25PH 200 RC5057 RC5057M DS30005057

845 MOTHERBOARD CIRCUIT diagram

Abstract: intel 845 MOTHERBOARD pcb CIRCUIT diagram Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 , FDB6030L 1 N-Channel MOSFET (TO-220 or TO-263) RDS(ON) = 20m @ VGS = 4.5V See Note 2. Q2 , Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1-2 Fairchild FDP6030L or FDB6030L 2 , circuit with an FDB6030L high-side MOSFET (RDS = 20m maximum at 25°C * 1.25 at 75°C = 25m) and a 8.2K RS
Fairchild Semiconductor
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PC 845 MOTHERBOARD VOLTAGE diagram FDB6030L 1 N-Channel MOSFET Fairchild 1N4148 624K

intel 845 MOTHERBOARD pcb CIRCUIT diagram

Abstract: PC 845 MOTHERBOARD CIRCUIT diagram FDB6030L Fairchild FDP7030BL or FDB7030BL Any Any Any Any Any Fairchild RC5057M Quantity 1 2 3 * * 1 , 10MV1200GX Sanyo 6MV1500GX Fairchild MBRD835L Fairchild 1N4148 Any Any Fairchild FDP6030L or FDB6030L , Fairchild FDP6030L or FDB6030L Any Any Any Any Any N/A Fairchild RC5057M Quantity 1 2 3 3 8 1 Optional 1 2 , an example, Figure 5 shows the typical characteristic of the DC-DC converter circuit with an FDB6030L
Fairchild Semiconductor
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1M4148 PC 845 MOTHERBOARD CIRCUIT diagram PC

capacitor 100nf 50v

Abstract: 845 intel chipset motherboard circuit Sanyo 10MV1200GX Sanyo 6MV1500GX Fairchild MBRD835L Any Any Fairchild FDP6030L or FDB6030L Fairchild , 6MV1500GX Fairchild MBRD835L Any Any Fairchild FDP6030L or FDB6030L Fairchild FDP7030BL or FDB7030BL Any Any , 6MV1500GX Fairchild MBRS320 Any Any Fairchild FDP6030L or FDB6030L Any Any Any Any N/A Fairchild RC5057M 1 1 , typical characteristic of the DC-DC converter circuit with an FDB6030L high-side MOSFET (RDS = 20m maximum
Fairchild Semiconductor
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capacitor 100nf 50v 845 intel chipset motherboard circuit philips Power MOSFET Selection Guide

RC5057M

Abstract: ECU-V1H104ZFX Fairchild FDP6030L or FDB6030L 1 N-Channel MOSFET (TO-220 or TO-263) RDS(ON) = 20m @ VGS = 4.5V , 1.3uH, 20A Inductor DCR ~ 2m Q1 Fairchild FDP6030L or FDB6030L 1 N-Channel MOSFET (TO , Any 1 1.3uH, 20A Inductor DCR ~ 2m Q1-2 Fairchild FDP6030L or FDB6030L 2 , FDB6030L high-side MOSFET (RDS = 20m maximum at 25°C * 1.25 at 75°C = 25m) and a 8.2K R5. 3.5 ESR =
Fairchild Semiconductor
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ECU-V1H104ZFX

flyback PCB layout sony

Abstract: sony flyback DO-214AB TO-263AB TO-220 2 3 Optional MBRS320 FDB6030L 2N6394 Schottky Rectifier, 3A , D1 Q1, Q2 Fairchild Fairchild MBRS320 FDB6030L Radial 10mmx20mm Wound Toroid , Table Manufacturer and Part # Fairchild FDP6030L Fairchild FDB6030L Fairchild FDP7030BL
Fairchild Semiconductor
Original
flyback PCB layout sony sony flyback 161A SONY NDB60 AN57 S320 RC5052/RC5057

kd 998

Abstract: unless otherw se note Parameter FDP6030L D rain C u rre n t - C o n tin u o u s FDB6030L
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OCR Scan
kd 998
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