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ICL7136CM44Z Intersil Corporation 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery; MQFP44, PDIP40; Temp Range: 0° to 70° visit Intersil Buy
ICL7136CM44ZT Intersil Corporation 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery; MQFP44, PDIP40; Temp Range: 0° to 70° visit Intersil Buy
ICL7136CPLZ Intersil Corporation 3 1/2 Digit LCD/LED, Low Power Display, A/D Converters with Overrange Recovery; MQFP44, PDIP40; Temp Range: 0° to 70° visit Intersil Buy
TPS61166DSKR Texas Instruments White LED Driver w/ Integrated Power Diode and Fast Burst Dimming Mode 10-SON -40 to 85 visit Texas Instruments
TPS61166DSKT Texas Instruments White LED Driver w/ Integrated Power Diode and Fast Burst Dimming Mode 10-SON -40 to 85 visit Texas Instruments Buy
ARF29-6921G Texas Instruments 500 mW OEM TRX with Rx clock recovery function visit Texas Instruments

fast recovery diode 400v 5A

Catalog Datasheet MFG & Type PDF Document Tags

High-Rel Discrete Semiconductors

Abstract: fast recovery diode 1000v 10A , SC3BJ1F, SC3BJ2F, SC3BJ4F, SC3BJ6F Fast recovery 3-phase full-wave bridge, 50V - 400V, 5A SC3BJ05FF , =2.1A USC1304, USC1305, USC1306 Superfast axial rectifier, 200V - 400V, Io=5.0A 2T2KF Fast recovery , - 600V, 70A SCAS05F, SCAS1F, SCAS2F, SCAS4F Fast recovery 1-phase full-wave bridge, 50V - 400V , SCBAR05F, SCBAR1F, SCBAR2F, SCBAR4F Fast recovery 1-phase full-wave bridge, 50V - 400V, 50A SCBAR05FF , , SC3BA1F, SC3BA2F, SC3BA4F Fast recovery 3-phase full-wave bridge, 50V - 400V, 15A SC3BA05FF
Semtech
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High-Rel Discrete Semiconductors fast recovery diode 1000v 10A fast recovery diode 400v 5A fast recovery diode 600v 5A 150a 400v diode bridge IN4954 1N5415 1N5420 1N5550 1N5554 1N5614 1N5616

Diode 400V 5A

Abstract: lm1083 10V / 150mA 5A 15 12V / 2A 5A 20 12V / 2A V / 0mA V / 0mA 3A 20 200 4V / 750mA 3A 20 , 200 4V / 750mA 0.5A 40 120 10V / 150mA 0.5A 40 120 10V / 150mA 5A 15 75 12V / 2A 5A 15 75 12V / 2A 5A 15 75 12V / 2A 0.5A 40 120 10V / 150mA 1A 40 5V / 200mA 0.75A 20 5V / 10mA 5A 20 90 15V / 2A 5A 20 90 15V / 2A 5A 30 90 15V / 2A 0.25A 40 120 10V / 150mA , 2.5A 2.5A 2.5A 2.5A 2.5A 5A 4A 4A 15A 15A 15A 15A 15A 15A 15A 15A 15A 15A 15A 15A
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2C444 Diode 400V 5A lm1083 transistor 2n1208 bc109 spice BZY55C IRF9024 2C415 2C425 2C746 2N1131L 2N1132

D45E60

Abstract: IDP45E60 Fast Switching Emitter Fast Switching Diode Controlled Diode Product Summary VRRM , Controlled technology â'¢ Fast recovery â'¢ Soft switching â'¢ Low reverse recovery charge â'¢ Low , . Dynamic Characteristics t rr Reverse recovery time ns V R=400V, IF=45A, diF/dt=1000A/μs, Tj=25°C - 140 - V R=400V, IF=45A, diF/dt=1000A/μs, Tj=125°C - 185 - V R=400V, IF , recovery charge nC V R=400V, IF=45A, diF/dt=1000A/μs, Tj=25°C - 1400 - V R=400V, IF
Infineon Technologies
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D45E60 PG-TO220-2 IEC61249-2-21

D45E60

Abstract: INFINEON D45E60 IDP45E60 Fast Switching Diode Product Summary Features VRRM · Low reverse recovery charge 45 A 1.5 V T jmax · Soft switching V VF · Fast recovery 600 IF , rr Reverse recovery time ns V R=400V, IF=45A, diF/dt=1000A/s, Tj=25°C - 140 - V , , diF/dt=1000A/s, T j=150°C - 29 - Q rr Reverse recovery charge nC V R=400V, IF , Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125
Infineon Technologies
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INFINEON D45E60 DIODE 1000a if45a 1000A diode switching DIODE 1000A PG-TO220-2-2

d45e60

Abstract: IDP45E60 IDP45E60 Fast Switching EmCon Diode Feature · 600 V EmCon technology · Fast recovery · Soft , , unless otherwise specified Parameter Dynamic Characteristics Reverse recovery time V R=400V, IF=45A, diF , =150°C Reverse recovery charge V R=400V, IF=45A, diF/dt=1000A/us, Tj=25°C V R=400V, IF =45A, diF/dt=1000A/us, T j=125°C V R=400V, IF =45A, diF/dt=1000A/us, T j=150°C Reverse recovery softness factor V R=400V , . reverse recovery time trr = f (diF/dt) parameter: V R = 400V, T j = 125°C 450 6 Typ. reverse recovery
Infineon Technologies
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Q67040-S4469

d45e60

Abstract: IDP45E60 IDP45E60 Fast Switching EmCon Diode Product Summary Feature VRRM · Low reverse recovery charge A 1.5 V T jmax · Soft switching 45 VF · Fast recovery V IF , Reverse recovery time ns t rr V R=400V, IF=45A, diF/dt=1000A/us, Tj=25°C - 140 - V R=400V , , diF/dt=1000A/us, T j=150°C - 29 - Reverse recovery charge nC Q rr V R=400V, IF , V R=400V, IF=45A, diF/dt=1000A/us, Tj=150°C - 4.4 - Reverse recovery softness factor
Infineon Technologies
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7008

D45E60

Abstract: RR350 IDB45E60 Fast Switching EmCon Diode Product Summary Feature VRRM · Low reverse recovery charge 45 A 1.5 V T jmax · Soft switching V VF · Fast recovery 600 , Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=45A, diF/dt=1000A/us, Tj=25°C - 140 - V R=400V, IF=45A, diF/dt=1000A/us, Tj=125°C - , Reverse recovery charge nC Q rr V R=400V, IF=45A, diF/dt=1000A/us, Tj=25°C - 1400 - V
Infineon Technologies
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Q67040-S4375 RR350 P-TO220-3

d45e60

Abstract: INFINEON D45E60 IDB45E60 Fast Switching EmCon Diode Product Summary Feature VRRM · Low reverse recovery charge 45 A 1.5 V T jmax · Soft switching V VF · Fast recovery 600 , Reverse recovery time ns t rr V R=400V, IF=45A, diF/dt=1000A/us, Tj=25°C - 140 - V R=400V , , diF/dt=1000A/us, T j=150°C - 29 - Reverse recovery charge nC Q rr V R=400V, IF , V R=400V, IF=45A, diF/dt=1000A/us, Tj=150°C - 4.4 - Reverse recovery softness factor
Infineon Technologies
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PG-TO263-3-2 smd 0.5 400v
Abstract: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 · · · · · Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time ­ trr , DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 ELECTRICAL CHARACTERISTICS (Per Diode, TC = 25 , and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (Per Diode, TC= 25 , Junction Temperature 400V 400V 400V 130A 20A 200A -65 to +200°C +200°C THERMAL PROPERTIES Symbol Semelab
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Abstract: technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C â'¢ â'¢ â'¢ â'¢ â , Low EMI Very soft, fast recovery anti-parallel Emitter Controlled HE diode Qualified according to , j = 25°C , - 121 - ns Diode reverse recovery charge Qrr V R =40 0 V, I F =7 5A , Qrr V R =40 0 V, I F =7 5A, - 5.8 - ÂuC Diode peak reverse recovery current Irrm , recovery charge as a function of diode current slope (VR = 400V, IF = 75A, Dynamic test circuit in Infineon Technologies
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IKW75N60T PG-TO-247-3 K75T60
Abstract: IDB45E60 Fast Switching Emitter Controlled Diode Fast Switching EmCon Diode Product Summary , Emitter Controlled technology 600V EmCon technology â'¢ Fast recovery 2 â'¢ Soft switching â'¢ Low reverse recovery charge 1 â'¢ Low forward voltage 3 â'¢ 175°C operating temperature , =1000A/Âus, T j=150°C - 29 - Reverse recovery charge nC Q rr V R=400V, IF=45A, diF/dt , R=400V, IF=45A, diF/dt=1000A/Âus, Tj=150°C - 4.4 - Reverse recovery softness factor Infineon Technologies
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PG-TO263-3

smps with uc3842 and tl431

Abstract: mc34063 step down with mosfet =0.31V) FRED - fast Diode, soft recovery Ultra-fast Power Rectifier Cont. Mode Step Down 2-10A upto 40V , , 1-240A (L: Vf=0.31V) FRED - Diode fast, soft recovery Ultra-fast Power Rectifier Cont. Mode Step Down , 500V 20A - TO247 Mosfet 500V 34A Max247 Turboswitch A - Ultra Fast Diode soft recovery Level Shifter , , E2Prom, PWM-Timer, etc. Fast Mosfet Max220 / TO247 / TO220/ ISOWATT218 8A, 2x300V Hyperfast Diode / Low recovery current Turboswitch Series - very fast, soft recovery Current Mode PWM Controller Enhanced PWM
STMicroelectronics
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smps with uc3842 and tl431 mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a BF3510TV BHA/K3012TV 600CW AVS08 L6560/A
Abstract: DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 â'¢ â'¢ â'¢ â'¢ â'¢ Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time â'" trr , DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 ELECTRICAL CHARACTERISTICS (Per Diode, TC = 25 , RATINGS (Per Diode, TC= 25°C unless otherwise stated) VRRM VRWM VR IFRM IF(AV) IFSM TSTG TJ (1 , Current Storage Temperature Range Maximum Operating Junction Temperature 400V 400V 400V 130A 20A Semelab
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Abstract: with soft, fast recovery anti-parallel EmCon HE diode Features â'¢ Very low VCE(sat) 1.5 V (typ.) â , . Diode reverse recovery time trr T j =1 7 ° C - 200 - ns Diode reverse recovery , . Typical reverse recovery time as a function of diode current slope (VR=400V, IF=10A, Dynamic test , of fall of reverse recovery current as a function of diode current slope (VR=400V, IF , recovery anti-parallel EmCon HE diode 1 â'¢ Qualified according to JEDEC for target applications â Infineon Technologies
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IKA10N60T PG-TO-220-3-31 K10T60

fast recovery diode 400v 5A

Abstract: BYV34-400MN2 DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 · · · · · Dual Fast Rectifiers with Common Cathode Very Low Reverse Recovery Time ­ trr , Number 9720 Issue 1 Page 1 of 2 DUAL FAST RECOVERY RECTIFIER DIODE BYV34-400MN2 ELECTRICAL , and High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (Per Diode, TC= 25 , Range Maximum Operating Junction Temperature 400V 400V 400V TBD 20A TBD -65 to +200°C +200°C
Semelab
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power Diode 400V 20A
Abstract: technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: ï'· Very low , '· Very soft, fast recovery anti-parallel Emitter Controlled HE diode ï'· Qualified according to JEDEC1 , ,0m J 0A 5A 1 0A E ts * due to diode recovery E ts * d u e to d io de re c ov e ry , reverse recovery current as a function of diode current slope (VR = 400V, IF = 10A, Dynamic test , L , C f rom Fig. E Energy losses include â'tailâ' and diode reverse recovery. ns mJ Infineon Technologies
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PG-TO220-3
Abstract: â'¢ Easier To Drive â'¢ TO-247 or Surface Mount D3PAK Package â'¢ FAST RECOVERY BODY DIODE , = 400V 5 V = "¦ 700 I J L = 100ÂuH Eon E ON includes diode reverse , , RG = "¦ Turn-on Switching Energy ns 225 VDD = 400V, VGS = 15V 90 INDUCTIVE , , RG = "¦ ÂuJ 110 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS , (VGS = 0V, IS = -21A) 1.3 Volts dv/ Peak Diode Recovery 15 V/ns dt dv/ 5 dt Advanced Power Technology
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APT6029BFLL APT6029SFLL
Abstract: technology with soft, fast recovery anti-parallel EmCon HE diode C â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ â , . Diode reverse recovery time trr T j =1 7 ° C - 140 - ns Diode reverse recovery , . Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 15A, Dynamic , diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V, IF , coefficient in VCE(sat) Low EMI Pb-free lead plating; RoHS compliant Very soft, fast recovery anti-parallel Infineon Technologies
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IKP15N60T PG-TO-220-3-1 K15T60
Abstract: Dissipation â'¢ Easier To Drive â'¢ TO-247 or Surface Mount D3PAK Package â'¢ FAST RECOVERY BODY DIODE , = 400V = 17A J L = 100ÂuH EON includes diode reverse recovery. 0 0 D T = 125Â , Reverse Transfer Capacitance Qg MAX VDD = 400V, VGS = 15V ID = 17A, RG = "¦ ÂuJ 50 , dv/ Peak Diode Recovery dt dv/ dt t rr Reverse Recovery Charge (IS = -17A, di/dt = , diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the Advanced Power Technology
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APT6038BFLL APT6038SFLL
Abstract: technology with soft, fast recovery anti-parallel Emitter Controlled HE diode Features: ï'· Very low , '· Low EMI ï'· Low Gate Charge ï'· Very soft, fast recovery anti-parallel Emitter Controlled HE diode , ,4 mJ E on* 0,2 mJ 0,0 mJ 0 ,0m J 0A 5A 1 0A E ts * due to diode recovery , recovery time as a function of diode current slope (VR=400V, IF=10A, Dynamic test circuit in Figure E , . Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 10A, Dynamic Infineon Technologies
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IKP10N60T PG-TO-220-3
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