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fairchild power bjt datasheet

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Abstract: the design. Datasheet contains specifications on a product that is discontinued by Fairchild , FDMA1430JP FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP FDMA1430JP -30 V, -2.9 A, 90 m , typical (Note 3) RoHS Compliant November 2012 Integrated P-Channel PowerTrench® MOSFET and BJT , in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch , Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Power ... Fairchild Semiconductor
Original
datasheet

8 pages,
215.72 Kb

bjt specifications fairchild power bjt FDMA1430JP TEXT
datasheet frame
Abstract: the design. Datasheet contains specifications on a product that is discontinued by Fairchild , FDMA1430JP FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP FDMA1430JP -30 V, -2.9 A, 90 m , typical (Note 3) RoHS Compliant March 2013 Integrated P-Channel PowerTrench® MOSFET and BJT , in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch , Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Power ... Fairchild Semiconductor
Original
datasheet

8 pages,
201.96 Kb

FDMA1430JP bjt specifications BJT characteristics BJT with V-I characteristics fairchild power bjt TEXT
datasheet frame
Abstract: Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any , specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference , Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General , handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET , Emitter-Base Voltage 10 V IC Collector Current 100 mA PC Collector Power Dissipation ... Fairchild Semiconductor
Original
datasheet

8 pages,
327.21 Kb

TEXT
datasheet frame
Abstract: Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea , condition of the power device. Since the turn-off characteristics of the BJT are affected by the base driver's condition, power switching losses are further reduced if the power BJT is operated under optimal , base driving part Q2 of the high voltage power BJT. This part is akin to a fly-back converter and is , the Power BJT Using high voltage power transistors for horizontal deflection output requires the ... Fairchild Semiconductor
Original
datasheet

19 pages,
157.82 Kb

zvs flyback driver fairchild power bjt datasheet fly back transformer monitor crt flyback transformer KSD5072 KSD5702 power bjt Drive Base BJT KDS5072 POWER BJTs fairchild power bjt AN9009 AN9009 TRANSISTORS BJT list BJT isolated Base Drive circuit flyback transformer FBT 18 crt horizontal deflection circuit TEXT
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Abstract: . Power Supply Voltage Regulator Figure 6. Low-Voltage Auxiliary Regulator © 2014 Fairchild , De-Rating Figure 26. Application #5: 3.3 V Power Supply Thermal Calculation © 2014 Fairchild , Featured Fairchild Product: FHR1200 FHR1200 Direct questions or comments about this evaluation board to: “Worldwide Direct Support” Fairchild Semiconductor.com © 2014 Fairchild Semiconductor Corporation , . 36 © 2014 Fairchild Semiconductor Corporation 2 FEBFHR1200 FEBFHR1200_SPG01A SPG01A • Rev. 1.0.0 List ... Fairchild Semiconductor
Original
datasheet

39 pages,
7456.2 Kb

FEBFHR1200 SPG01A TEXT
datasheet frame
Abstract: notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor , contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet , . 40 10 5 2 Typ. Max. 10 200 30 15 5 1.5 Units uA mA V V MHz V us ©2000 Fairchild Semiconductor , ], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2000 Fairchild , 80 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 10000 60 10 IB2 = -IA ... Fairchild Semiconductor
Original
datasheet

7 pages,
104.97 Kb

power BJT 1500v fairchild power bjt AN9009 transistor 9009 crt horizontal deflection circuit KSD5702 TEXT
datasheet frame
Abstract: . And currently, Fairchild produces QFET series using planar technology and low voltage power trench , July, 2000 AN9010 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs , . 35 16) Total Power Dissipation, Linear Derating Factor , . 36 Rev D, July 2000 1 The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power MOSFET (Metal Oxide ... Fairchild Semiconductor
Original
datasheet

37 pages,
348.92 Kb

n Power mosfet depletion FQP10N20 Drive Base BJT BJT isolated Base Drive circuit vmosfet AN9010 power bjt advantages and disadvantages free transistor equivalent book free all transistor equivalent book all mosfet equivalent book TEXT
datasheet frame
Abstract: November 2,1999 AN9010 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs , . 37 16) Total Power Dissipation, Linear Derating Factor , . 38 Rev C, November 1999 1 The Bipolar Power Transistor as a switching device for a power application had few disadvantages and this led to the development of the power MOSFET ( Metal Oxide ... Original
datasheet

36 pages,
371.82 Kb

depletion mode power mosfet Drive Base BJT list of n channel power mosfet depletion fet 600V depletion MOSFET DMOSFET P-Channel Depletion Mode FET list of P channel power mosfet N-Channel jfet 200V depletion MOSFET N-CH 200V vmosfet n Power mosfet depletion AN9010 fairchild power bjt datasheet AN9010 MOSFET 800V 10A AN9010 free all transistor equivalent book AN9010 n mosfet depletion 600V AN9010 free transistor equivalent book AN9010 P-Channel Depletion Mosfets AN9010 all mosfet equivalent book AN9010 AN9010 AN9010 TEXT
datasheet frame
Abstract: was later than its competitors for a power semiconductor company. However, Fairchild Semiconductor was , and 1500V ultra-fast IGBT for 220V power IH applications in 1995. In 1996, Fairchild Semiconductor , ) is inferior to that of the power MOSFETs, but it is superior to that of the BJT. The collector , . 3-1. Advantages, Disadvantages and Characteristics Comparison with BJT and MOSFET , (insulated gate bipolar transistor), power MOSFETs were used in medium or low voltage applications which ... Fairchild Semiconductor
Original
datasheet

29 pages,
874.79 Kb

vtom vertical pnp bjt Trench MOSFET Termination Structure thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion mosfet 8A 900V TO-220 calculation of IGBT snubber RUF resistor PTIGBT 600V 10A P-Channel IGBT TEXT
datasheet frame
Abstract: IGBT, constructed by adding the P+ layer, has the characteristics of the power transistor (BJT), which , , while IGBT has the advantage over power BJT, which has limitations in high frequency applications due , turn-off c. Gate drive power requirement C. Gate drive layout considerations a. Effect of gate line inductance on the induced turn-on b. Power source stabilizing capacitor c. Isolation problem d. Wiring , , IGBT is easier to drive, and it combines the advantages of MOSFET's faster switching speed and power ... Fairchild Semiconductor
Original
datasheet

25 pages,
378.43 Kb

high frequency welder circuit diagram RCD snubber mosfet design chopper transformer FOR UPS DC MOTOR SPEED CONTROL USING IGBT igbt failure IGBT snubber IGBT PNP RC snubber thyristor design arc welder circuit snubber CIRCUITS mosfet RC snubber ac motor pwm INVERTER welder RC VOLTAGE CLAMP snubber circuit full bridge arc welder spot welder circuit diagram arc welder inverter P-Channel IGBT RCD snubber calculation of IGBT snubber TEXT
datasheet frame

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