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fairchild power bjt datasheet

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Abstract: rectifier becomes essential building block for greater efficiency and higher power density in switching power supplies. It is popular in applications from high-end servers to laptop adapters. This application note shows potential failure modes of power MOSFETs and solutions for synchronous rectification in flyback topology. An enhanced FRFET®, power MOSFET with fast recovery body diode, provides , Modes Most of today's power MOSFETs have a vertical DMOS structure. In this structure, many parasitic ... Original
datasheet

5 pages,
151.25 Kb

synchronous rectifier pn junction diode structure NPN Power BJT 100v Drive Base BJT AN-9065 transistor bjt BJT Gate Drive circuit fairchild power bjt AN-9065 abstract
datasheet frame
Abstract: Maximum Power Dissipation ©2012 Fairchild Semiconductor Corporation FDMA1430JP FDMA1430JP Rev.C 5 , FDMA1430JP FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP FDMA1430JP -30 V, -2.9 A, 90 m , typical (Note 3) RoHS Compliant November 2012 Integrated P-Channel PowerTrench® MOSFET and BJT , in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch , Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature ... Original
datasheet

8 pages,
215.72 Kb

fairchild power bjt FDMA1430JP FDMA1430JP abstract
datasheet frame
Abstract: FDMA1430JP FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP FDMA1430JP -30 V, -2.9 A, 90 m , typical (Note 3) RoHS Compliant March 2013 Integrated P-Channel PowerTrench® MOSFET and BJT , in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch , Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Power Dissipation TA = 25°C TA = 25°C Operating and Storage Junction Temperature Range (Note 1a) (Note ... Original
datasheet

8 pages,
201.96 Kb

FDMA1430JP BJT with V-I characteristics fairchild power bjt FDMA1430JP abstract
datasheet frame
Abstract: ) where P2 is the power dissipation in BJT, Q1. IE is the emitter current of Q1, which is the actual LED , multiplying the power dissipated in BJT by the sum of the thermal resistances of BJT from junction to , power dissipation for BJT at TA = +30癈. If the power dissipation in BJT is considerably higher, BJT , added at the input to the device, or in series with LED, to reduce the power dissipation in the BJT , EV kit can dissipate large amounts of power. Operate this EV kit with care to avoid possible ... Original
datasheet

5 pages,
112.65 Kb

fairchild power bjt datasheet Drive Base BJT MAX16803 MAX16803ATE MJD31CTF npn power BJT transistor j5 Power bjt j3 bjt input output bjt npn transistor BJT Driver bjt specifications fairchild power bjt MAX16803EVKIT MAX16803EVKIT MAX16803EVKIT abstract
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Abstract: Min. 40 10 5 2 Typ. Max. 10 200 30 15 5 1.5 Units µA mA V V MHz V µs ©2000 Fairchild Semiconductor , ], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2000 Fairchild , 80 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 10000 60 10 IB2 = -IA , [ C], CASE TEMPERATURE Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD5702 KSD5702 Package Demensions ... Original
datasheet

7 pages,
104.97 Kb

power BJT 1500v fairchild power bjt crt horizontal deflection circuit KSD5702 KSD5702 abstract
datasheet frame
Abstract: Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea , condition of the power device. Since the turn-off characteristics of the BJT are affected by the base driver's condition, power switching losses are further reduced if the power BJT is operated under optimal , base driving part Q2 of the high voltage power BJT. This part is akin to a fly-back converter and is , the Power BJT Using high voltage power transistors for horizontal deflection output requires the ... Original
datasheet

19 pages,
157.82 Kb

zvs flyback driver fairchild power bjt datasheet crt flyback transformer KSD5072 KSD5702 power bjt POWER BJTs Drive Base BJT KDS5072 fairchild power bjt AN9009 TRANSISTORS BJT list BJT isolated Base Drive circuit AN9009 abstract
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Abstract: less possibility of triggering parasitic BJT. Therefore, new power MOSFETs with improved body diode , Abstract The trend in power converters is towards increasing power densities. To achieve this goal, it is necessary to reduce power losses, overall system size, and weight by increasing the switching frequency. High reliability is also very important for today's switched-mode power supplies (SMPS). The , the efficiency as well as reduce the size of the application. It also reduces the stress on power ... Original
datasheet

12 pages,
1480.18 Kb

FQPF*11n50cf bjt 200 Ampere LLC resonant converters FDPF13N50FT high frequency bjt fql40n50f AN-7536 smps resonant llc full bridge double resonant converter FDPF10N50FT smps resonant llc LLC resonant transformer fdpf10n50 AN-9067 AN-9067 abstract
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Abstract: TEMPERATURE Figure 20. Power Derating © 2013 Fairchild Semiconductor Corporation FJBE2150D FJBE2150D Rev. 1.0.0 7 , (1) Description The FJBE2150D FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBCTM configuration in applications such as: power supplies, motor drivers, smart grid, or ignition switches. The power switch is designed to operate up to 1250 volts and up to 3 amps, while , driven using off-theshelf power supply controllers or drivers. The ESBCTM MOSFET is a low-voltage ... Original
datasheet

13 pages,
665.27 Kb

ignition drivers FDC655 fairchild power bjt FJBE2150D FJBE2150D abstract
datasheet frame
Abstract: TEMPERATURE Figure 20. Power Derating © 2012 Fairchild Semiconductor Corporation FJP2160D FJP2160D Rev. A0 6 , Transistor Applications · High Voltage and High Speed Power Switch Application · Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM) · Smart Meter, Smart Breakers, HV Industrial Power Supplies · Motor Driver and Ignition Driver Description The FJP2160D FJP2160D is a low-cost, high performance power switch , : power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate ... Original
datasheet

12 pages,
698.91 Kb

input output bjt npn transistor ESBC C 1008 y transistor cascode mosfet switching fjp2160d fairchild power bjt FJP2160D FJP2160D abstract
datasheet frame
Abstract: F J Fairchild BJT Package X: SOT-323 (3pin) YF: SOT-563F (6pin) Z: SOT-623F (3pin) S: SOP-8 , ) SOT-563F Camera Strobe Transistors Part Number FJN965 FJN965 FJU1615 FJU1615# FJN5471 FJN5471 * #Power BJT *In , * #Power BJT *In Development Package BVCBO(V) IC(A) hFE Application TO-92 I-PAK TO-92 , -50 0.1 22/22 FJX4004R FJX4004R SOT-323 FJX4005R FJX4005R F J Fairchild BJT Package X: SOT-323 , Summary Space saving packages: SOT-323, SOT-563F and SOT-623F Newly developed Fairchild solutions ... Original
datasheet

4 pages,
223.66 Kb

FJX2222A FJX2907A FJX3001R FJX3904 FJX733 FJX945 FJYF2906 SOT-323 SOT 213 rom 2716 fairchild LED TO-92 FJZ945 FJZ733 ROM SOT bjt 522 datasheet abstract
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* Power Discrete BJT Electrical Circuit Model * * Product: FJV4103R FJV4103R FJV4103R FJV4103R * Package: SOT-23 * Switching Application(Bias Resistor Built-in) .subckt FJV4103R FJV4103R FJV4103R FJV4103R 1 2 3 Q1 1 4 3 FSC R1 4 2 22k R2 4 3 22k .model FSC pnp + IS = 4.364229E-14 364229E-14 364229E-14 364229E-14 BF = 138 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 NE = 2 VAF = 45.5 + IKF 7.96E-10 96E-10 96E-10 96E-10 .ends * Creation : Sep.-24-2004 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjv4103r.lib
Fairchild 22/10/2012 0.86 Kb LIB fjv4103r.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJX4003R FJX4003R FJX4003R FJX4003R * Package: SOT-323 * Switching Application(Bias Resistor Built-in) .subckt FJX4003R FJX4003R FJX4003R FJX4003R 1 2 3 Q1 1 4 3 FSC R1 4 2 22k R2 4 3 22k .model FSC pnp + IS = 4.364229E-14 364229E-14 364229E-14 364229E-14 BF = 138 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 NE = 2 VAF = 45.5 + IKF 7.96E-10 96E-10 96E-10 96E-10 .ends * Creation : Sep.-24-2004 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjx4003r.lib
Fairchild 22/10/2012 0.86 Kb LIB fjx4003r.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJN3303R FJN3303R FJN3303R FJN3303R * Package: TO-92 * Switching Application(Bias Resistor Built-in) .subckt FJN3303R FJN3303R FJN3303R FJN3303R 1 2 3 Q1 1 4 3 FSC R1 4 2 22k R2 4 3 22k .MODEL FSC npn + IS = 3.264229E-14 264229E-14 264229E-14 264229E-14 BF = 290 NF = 1 + ISE = * Creation : Dec.-13-2003 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjn3303r.lib
Fairchild 22/10/2012 1 Kb LIB fjn3303r.lib
* Power Discrete BJT Electrical Parameters * * Product: FJD5553 FJD5553 FJD5553 FJD5553 * Package: DPAK * High Voltage Switch Mode Application *- .MODEL FJD5553 FJD5553 FJD5553 FJD5553 NPN + IS=8.010E-12 010E-12 010E-12 010E-12 BF=200.09 VAF=600 + IKF=0.24325 ISE=4.2538E-09 2538E-09 2538E-09 2538E-09 NE=2.0 + BR=1.64499 VAR=100 IKR=0.08102 + ISC=9.4644E-08 4644E-08 4644E-08 4644E-08 *- * Creation: Nov.-01-2007 Rev: 0.0 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjd5553.lib
Fairchild 22/10/2012 0.87 Kb LIB fjd5553.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJV3103R FJV3103R FJV3103R FJV3103R * Package: SOT-23 * Switching Application(Bias Resistor Built-in) .subckt FJV3103R FJV3103R FJV3103R FJV3103R 1 2 3 Q1 1 4 3 FSC R1 4 2 22k R2 4 3 22k .MODEL FSC npn + IS = 3.264229E-14 264229E-14 264229E-14 264229E-14 BF = 290 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 * Creation : Sep.-24-2004 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjv3103r.lib
Fairchild 22/10/2012 0.98 Kb LIB fjv3103r.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJV3101R FJV3101R FJV3101R FJV3101R * Package: SOT-23 * Switching Application(Bias Resistor Built-in) .subckt FJV3101R FJV3101R FJV3101R FJV3101R 1 2 3 Q1 1 4 3 FSC R1 4 2 4.7k R2 4 3 4.7k .model FSC npn + IS = 3.264229E-14 264229E-14 264229E-14 264229E-14 BF = 380 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 NE = 2 VAF = 103.7 + IKF * Creation : Sep.-24-2004 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjv3101r.lib
Fairchild 22/10/2012 0.86 Kb LIB fjv3101r.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJV4101R FJV4101R FJV4101R FJV4101R * Package: SOT-23 * Switching Application(Bias Resistor Built-in) .subckt FJV4101R FJV4101R FJV4101R FJV4101R 1 2 3 Q1 1 4 3 FSC R1 4 2 4.7k R2 4 3 4.7k .model FSC pnp + IS = 4.364229E-14 364229E-14 364229E-14 364229E-14 BF = 118 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 NE = 2 VAF = 70.57 + IKF 7.96E-10 96E-10 96E-10 96E-10 .ends * Creation : Sep.-24-2004 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjv4101r.lib
Fairchild 22/10/2012 0.86 Kb LIB fjv4101r.lib
* Power Discrete BJT Electrical Circuit Model * * Product: BCX17 BCX17 BCX17 BCX17 * General Purpose Amplifier and SOT-23 package .model BCX17 BCX17 BCX17 BCX17 pnp ( + Is=70.49f Xti=3 Eg=1.11 Vaf=50.09 Bf=168.5 + Ise=76.72f Ne=1.777 Ikf=1.402 Nk=.4715 Xtb=1.5 + Br=12.07 Isc=3.655p Nc=1.693 Ikr=8.675 Rc=.309 + Cjc=923p Mjc=.3454 Vjc=54.04u Fc=.5 ) * Creation : Oct.-13-2003 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/bcx17.lib
Fairchild 22/10/2012 0.58 Kb LIB bcx17.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJN4301R FJN4301R FJN4301R FJN4301R * Package: TO-92 * Switching Application(Bias Resistor Built-in) .subckt FJN4301R FJN4301R FJN4301R FJN4301R 1 2 3 Q1 1 4 3 FSC R1 4 2 4.7k R2 4 3 4.7k .model FSC pnp + IS = 4.364229E-14 364229E-14 364229E-14 364229E-14 BF = 118 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 NE = 2 VAF = 70.57 + = 7.96E-10 96E-10 96E-10 96E-10 .ends * Creation : Dec.-13-2003 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjn4301r.lib
Fairchild 22/10/2012 0.89 Kb LIB fjn4301r.lib
* Power Discrete BJT Electrical Circuit Model * * Product: FJN4302R FJN4302R FJN4302R FJN4302R * Package: TO-92 * Switching Application(Bias Resistor Built-in) .subckt FJN4302R FJN4302R FJN4302R FJN4302R 1 2 3 Q1 1 4 3 FSC R1 4 2 10k R2 4 3 10k .model FSC pnp + IS = 4.364229E-14 364229E-14 364229E-14 364229E-14 BF = 127 NF = 1 + ISE = 1.89087E-14 89087E-14 89087E-14 89087E-14 NE = 2 VAF = 55.5 + = 7.96E-10 96E-10 96E-10 96E-10 .ends * Creation : Dec.-13-2003 * Fairchild Semiconductor
www.datasheetarchive.com/files/fairchild/simulation-models/fjn4302r.lib
Fairchild 22/10/2012 0.88 Kb LIB fjn4302r.lib