NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: rectifier becomes essential building block for greater efficiency and higher power density in switching power supplies. It is popular in applications from high-end servers to laptop adapters. This application note shows potential failure modes of power MOSFETs and solutions for synchronous rectification in flyback topology. An enhanced FRFET®, power MOSFET with fast recovery body diode, provides , Modes Most of today's power MOSFETs have a vertical DMOS structure. In this structure, many parasitic ... | Original |
5 pages, |
pn junction diode structure Drive Base BJT transistor bjt BJT Gate Drive circuit fairchild power bjt AN-9065 AN-9065 abstract |
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| Abstract: ) where P2 is the power dissipation in BJT, Q1. IE is the emitter current of Q1, which is the actual LED , multiplying the power dissipated in BJT by the sum of the thermal resistances of BJT from junction to , power dissipation for BJT at TA = +30癈. If the power dissipation in BJT is considerably higher, BJT , added at the input to the device, or in series with LED, to reduce the power dissipation in the BJT , EV kit can dissipate large amounts of power. Operate this EV kit with care to avoid possible ... | Original |
5 pages, |
Drive Base BJT fairchild power bjt datasheet MAX16803 MAX16803ATE MJD31CTF npn power BJT transistor j5 Power bjt input output bjt npn transistor j3 bjt bjt specifications BJT Driver fairchild power bjt MAX16803EVKIT MAX16803EVKIT MAX16803EVKIT abstract |
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| Abstract: Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea , condition of the power device. Since the turn-off characteristics of the BJT are affected by the base driver's condition, power switching losses are further reduced if the power BJT is operated under optimal , base driving part Q2 of the high voltage power BJT. This part is akin to a fly-back converter and is , the Power BJT Using high voltage power transistors for horizontal deflection output requires the ... | Original |
19 pages, |
zvs flyback driver fairchild power bjt datasheet crt flyback transformer KDS5072 KSD5072 KSD5702 power bjt POWER BJTs Drive Base BJT fairchild power bjt BJT isolated Base Drive circuit AN9009 TRANSISTORS BJT list AN9009 abstract |
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| Abstract: less possibility of triggering parasitic BJT. Therefore, new power MOSFETs with improved body diode , Abstract The trend in power converters is towards increasing power densities. To achieve this goal, it is necessary to reduce power losses, overall system size, and weight by increasing the switching frequency. High reliability is also very important for today's switched-mode power supplies (SMPS). The , the efficiency as well as reduce the size of the application. It also reduces the stress on power ... | Original |
12 pages, |
fqa28n50f Full-bridge series resonant converter ZVT full bridge for welding FDP20N50F smps resonant llc LLC resonant converters FDPF13N50FT AN-7536 high frequency bjt smps resonant llc full bridge double resonant converter FDPF10N50FT AN-9067 AN-9067 abstract |
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| Abstract: TEMPERATURE Figure 20. Power Derating © 2012 Fairchild Semiconductor Corporation FJP2160D FJP2160D Rev. A0 6 , Transistor Applications · High Voltage and High Speed Power Switch Application · Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM) · Smart Meter, Smart Breakers, HV Industrial Power Supplies · Motor Driver and Ignition Driver Description The FJP2160D FJP2160D is a low-cost, high performance power switch , : power supplies, motor drivers, Smart Grid, or ignition switches. The power switch is designed to operate ... | Original |
12 pages, |
C 1008 y transistor cascode mosfet switching fjp2160d fairchild power bjt FJP2160D FJP2160D abstract |
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| Abstract: F J Fairchild BJT Package X: SOT-323 (3pin) YF: SOT-563F (6pin) Z: SOT-623F (3pin) S: SOP-8 , ) SOT-563F Camera Strobe Transistors Part Number FJN965 FJN965 FJU1615 FJU1615# FJN5471 FJN5471 * #Power BJT *In , * #Power BJT *In Development Package BVCBO(V) IC(A) hFE Application TO-92 I-PAK TO-92 , -50 0.1 22/22 FJX4004R FJX4004R SOT-323 FJX4005R FJX4005R F J Fairchild BJT Package X: SOT-323 , Summary Space saving packages: SOT-323, SOT-563F and SOT-623F Newly developed Fairchild solutions ... | Original |
4 pages, |
FJX1182 FJX2222A FJX2907A FJX3001R FJX3906 FJX733 FJX945 SOT-323 SOT 213 rom 2716 FJZ945 FJZ733 FJYF2906 fairchild LED TO-92 ROM SOT datasheet abstract |
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| Abstract: ) Fairchild - FQB34P10 FQB34P10 TrenchPTM P-Channel Power MOSFETs NEW TRENCH P-CHANNEL POWER MOSFETS -50V TO -150V -150V , NEW PRO D U CT B RIEF Introducing P-Channel Power MOSFETs next generation p-channel power mosfets -50v to -600v SEPTEMBER 2008 OVERVIEW IXYS has reinforced its P-Channel Power MOSFET , efficient in the industry. The TrenchPTM P-Channel Power MOSFET family targets low voltage applications , thermal efficiencies. The PolarPTM P-Channel Power MOSFET family targets applications requiring much ... | Original |
6 pages, |
IXTP18P10T IXTP28P06 FQB34P10 P-Channel MOSFET 600v 200V AUTOMOTIVE MOSFET p channel mosfet 100v IXTT16P60P IXTR90P20P ixtr48p20p fairchild power bjt datasheet IXTA36P15P 014 IR MOSFET Transistor IXTA76P10T datasheet abstract |
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| Abstract: www.fairchildsemi.com Prototype Report High Power Factor LED Ballast using FSFR2100 FSFR2100 Fairchild , FSFR2100 FSFR2100 Fairchild Power Switch (FPSTM) for Resonant Half-Bridge Converter 9 5.5 FOD2741 FOD2741 Optically , the FSFR2100 FSFR2100 Fairchild Power Switch (FPS). The input voltage range is 90 265 VRMS and there are six , frequency in order to get a high power factor. The DC/DC converter is based on the Fairchild Power Switch , Rev. 1 21/07/08 www.fairchildsemi.com 5.4 FSFR2100 FSFR2100 Fairchild Power Switch (FPSTM) for Resonant ... | Original |
16 pages, |
R910A T4A 250V EFD30H FAN7529 FAN6961 transistor c914 FS91 SG6859 FSFR2100 LED 450V 47UF SG6858TZ EFD20-8 IC-95 D206 fairchild power bjt datasheet FSFR2100 FAN7529 FSFR2100 abstract |
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| Abstract: make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It's a functional integration of Power MOSFET and BJT devices in monolithic form. It combines the best attributes , loss and low switching loss. The main advantages of IGBT over a Power MOSFET and a BJT are: 1. It has , of a Power MOSFET and superior to that of a BJT. The collector current tailing due to the minority , similarities, the operation of an IGBT is closer to that of a power BJT than a power MOSFET. It is due to the ... | Original |
15 pages, |
UPS basics Drive Base BJT IGBT SCHEMATIC input output bjt npn transistor IXSH30N60B2 IXYS Corporation 30N60B2D1 fairchild power bjt datasheet power BJT PNP SCHEMATIC servo dc IGBTS IGBT PNP TRANSISTORS BJT with low gate voltage transistor igbt IXAN0063 IXAN0063 abstract |
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| Abstract: in the news Fairchild captures #1 Worldwide Market Position in Power Transistors . . . Page 1 , power transistors. Fairchild increased its 2001 power transistor revenues by more than 42% over the , global power transistor market. Fairchild announced the results from the report at the Bear Stearns 13th Annual Technology Conference in New York. "Fairchild's focus on power solutions for multimarket , , represent the largest segment of Fairchild's power products mix accounting for 46% of overall revenues. ... | Original |
15 pages, |
induction cooker 30V 20A power p MOSFET 1 kw schematic induction heating induction cooker schematic AC to DC converter 12v a inverter welding machine circuit board alternator rectifier diode 50a SCHEMATIC IGNITION WITH IGBTS Converter for Induction Heating fairchild power bjt datasheet dc-dc driver schematic DIP ic datasheet abstract |
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| * Power Discrete BJT Electrical Circuit Model * * Product: KSA1381 KSA1381 KSA1381 KSA1381 * Package: TO-126 * CRT Display, Video Output *- .MODEL KSA1381 KSA1381 KSA1381 KSA1381 pnp + IS = 2.7544E-13 7544E-13 7544E-13 7544E-13 + BF = 134 + BR = 0.092 + ISE = 9.0546E-14 0546E-14 0546E-14 0546E-14 + NE = 1.5 + ISC = 5.24807E-13 24807E-13 24807E-13 24807E-13 + NC = 2 *- * Creation: May-09-2007 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/ksa1381_rev1.lib |
Fairchild | 22/10/2012 | 0.89 Kb | LIB | ksa1381_rev1.lib |
| * Power Discrete BJT Electrical Parameters * * Product: FJD5553 FJD5553 FJD5553 FJD5553 * Package: DPAK * High Voltage Switch Mode Application *- .MODEL FJD5553 FJD5553 FJD5553 FJD5553 NPN + IS=8.010E-12 010E-12 010E-12 010E-12 BF=200.09 VAF=600 + IKF=0.24325 ISE=4.2538E-09 2538E-09 2538E-09 2538E-09 NE=2.0 + BR=1.64499 VAR=100 IKR=0.08102 + ISC=9 .65 *- * Creation: Nov.-01-2007 Rev: 0.0 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/fjd5553.lib |
Fairchild | 22/10/2012 | 0.87 Kb | LIB | fjd5553.lib |
| * Power Discrete BJT Electrical Circuit Model * * Product: MMBTH10 MMBTH10 MMBTH10 MMBTH10 * Package: SOT-23 * NPN RF Transistor .model MMBTH10 MMBTH10 MMBTH10 MMBTH10 npn + IS=69.28e-18 XTI=3 EG=1.11 VAF=100 + BF=308.6 NE=1.197 ISE=69.28e-18 IKF=22.83e-3 + XTB=1.5 BR=1.11 NC=2 IKR=0 + RC=4 CJC=1.042e-12 MJC=0 -2004 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/mmbth10.lib |
Fairchild | 22/10/2012 | 0.64 Kb | LIB | mmbth10.lib |
| * Power Discrete BJT Electrical Parameters * * Product: MJE340 MJE340 MJE340 MJE340 * Package: TO-126 * High Voltage General Purpose Applications *- .MODEL MJE340 MJE340 MJE340 MJE340 NPN + IS=8.010E-13 010E-13 010E-13 010E-13 + BF=123.09 + VAF=100 + IKF=1.0825 + ISE=4.0538E-11 0538E-11 0538E-11 0538E-11 + NE=1.5 + BR=0.00419 + VAR=100 + IKR=0.05102 + ISC=1.4644E-10 4644E-10 4644E-10 4644E-10 + NC=2.0 + RE=0.0098 + RC=2.015 + RB=0 -08-2007 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/mje340.lib |
Fairchild | 22/10/2012 | 0.67 Kb | LIB | mje340.lib |
| * Power Discrete BJT Electrical Circuit Model * * Product: MJE350 MJE350 MJE350 MJE350 * Package: TO-126 * High Voltage General Purpose Applications *- .MODEL MJE350 MJE350 MJE350 MJE350 pnp + IS = 2.7544E-13 7544E-13 7544E-13 7544E-13 + BF = 128 + BR = 0.0362 + ISE = 1.9546E-12 9546E-12 9546E-12 9546E-12 + NE = 1.5 + ISC = 5.24807E-12 24807E-12 24807E-12 24807E-12 + NC = 2 *- * Creation: May-09-2007 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/mje350.lib |
Fairchild | 22/10/2012 | 0.91 Kb | LIB | mje350.lib |
| * Power Discrete BJT Electrical Circuit Model * * Product: BCX17 BCX17 BCX17 BCX17 * General Purpose Amplifier and SOT-23 package .model BCX17 BCX17 BCX17 BCX17 pnp ( + Is=70.49f Xti=3 Eg=1.11 Vaf=50.09 Bf=168.5 + Ise=76.72f Ne=1.777 Ikf=1.402 Nk=.4715 Xtb=1.5 + Br=12.07 Isc=3.655p Nc=1.693 Ikr=8.675 Rc=.309 + Cjc=923p Mjc=.3454 Vjc=54.04u Fc=.5 =10 ) * Creation : Oct.-13-2003 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/bcx17.lib |
Fairchild | 22/10/2012 | 0.58 Kb | LIB | bcx17.lib |
| * Power Discrete BJT Electrical Parameters * * Product: FJD5555 FJD5555 FJD5555 FJD5555 * Package: DPAK * High Voltage Switch Mode Application *- .MODEL FJD5555 FJD5555 FJD5555 FJD5555 NPN + IS=8.010E-12 010E-12 010E-12 010E-12 BF=130.09 VAF=600 + IKF=0.24325 ISE=5.2538E-09 2538E-09 2538E-09 2538E-09 NE=2.0 + BR=1.24499 VAR=100 IKR=0.08102 + ISC=9 .65 *- * Creation: Nov.-01-2007 Rev: 0.0 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/fjd5555.lib |
Fairchild | 22/10/2012 | 0.87 Kb | LIB | fjd5555.lib |
| * Power Discrete BJT Electrical Parameters * * Product: FJA4213 FJA4213 FJA4213 FJA4213 * Package: TO-3P * Audio Power Amplifier (Complement to FJA4313 FJA4313 FJA4313 FJA4313) *- .subckt FJA4213 FJA4213 FJA4213 FJA4213 1 2 3 q1 1 2 3 F4213 F4213 F4213 F4213 .model F4213 F4213 F4213 F4213 PNP + IS=1.30E-10 30E-10 30E-10 30E-10 BF=91.42 VAF EG=0.76 + XTB=2.68 .ends FJL4213 FJL4213 FJL4213 FJL4213 * Power Discrete Bipolar Thermal *- * Creation: Oct.-29-2007 Rev: 0.0 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/fja4213.lib |
Fairchild | 22/10/2012 | 1.31 Kb | LIB | fja4213.lib |
| * Power Discrete BJT Electrical Parameters * * Product: FJL4215 FJL4215 FJL4215 FJL4215 * Package: TO-264 * Audio Power Amplifier (Complement to FJL4315 FJL4315 FJL4315 FJL4315) *- .subckt FJL4215 FJL4215 FJL4215 FJL4215 1 2 3 q1 1 2 3 F4215 F4215 F4215 F4215 .model F4215 F4215 F4215 F4215 PNP + IS=1.30E-10 30E-10 30E-10 30E-10 BF=91.42 VAF EG=0.76 + XTB=2.68 .ends FJL4215 FJL4215 FJL4215 FJL4215 * Power Discrete Bipolar Thermal *- * Creation: Oct.-29-2007 Rev: 1.0 * Fairchild Semiconductor www.datasheetarchive.com/files/fairchild/simulation-models/fjl4215.lib |
Fairchild | 22/10/2012 | 1.31 Kb | LIB | fjl4215.lib |
| * Power Discrete BJT Electrical Circuit Model * * Product: KSA1241 KSA1241 KSA1241 KSA1241 * Power Amplifier Applications and I-PACK * Complement to KSC3076 KSC3076 KSC3076 KSC3076 .MODEL KSA1241 KSA1241 KSA1241 KSA1241 pnp ( + IS = 2.754229E-13 754229E-13 754229E-13 754229E-13 BF = 129.2 NF = 1 + BR = 10.64 NR = 0.971 ISE = 2.29087E-13 29087E-13 29087E-13 29087E-13 + NE = 1.5 ISC = 2.290868E 290868E 290868E 290868E ) * * Creation : Nov.-05-2002 * Fairchild Semiconductor in S.Korea www.datasheetarchive.com/files/fairchild/pdfs/models actual/ksa1241.mod |
Fairchild | 22/08/2003 | 1.1 Kb | MOD | ksa1241.mod |