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fairchild power bjt datasheet

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fairchild power bjt

Abstract: bjt specifications the design. Datasheet contains specifications on a product that is discontinued by Fairchild , FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP -30 V, -2.9 A, 90 m , typical (Note 3) RoHS Compliant November 2012 Integrated P-Channel PowerTrench® MOSFET and BJT , in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch , Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Power
Fairchild Semiconductor
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fairchild power bjt bjt specifications

BJT with V-I characteristics

Abstract: fairchild power bjt the design. Datasheet contains specifications on a product that is discontinued by Fairchild , FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP -30 V, -2.9 A, 90 m , typical (Note 3) RoHS Compliant March 2013 Integrated P-Channel PowerTrench® MOSFET and BJT , in cellular handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch , Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Power
Fairchild Semiconductor
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BJT with V-I characteristics BJT characteristics
Abstract: Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any , specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference , Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ Features General , handset and other ultra-portable applications. It features a 50 V NPN BJT and a 30 V P-ch Trench MOSFET , Emitter-Base Voltage 10 V IC Collector Current 100 mA PC Collector Power Dissipation Fairchild Semiconductor
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crt horizontal deflection circuit

Abstract: flyback transformer FBT 18 Horizontal Deflection Circuit and its High Voltage BJT Selection Guide-Line Dr. In-Hwan Oh Fairchild Korea , condition of the power device. Since the turn-off characteristics of the BJT are affected by the base driver's condition, power switching losses are further reduced if the power BJT is operated under optimal , base driving part Q2 of the high voltage power BJT. This part is akin to a fly-back converter and is , the Power BJT Using high voltage power transistors for horizontal deflection output requires the
Fairchild Semiconductor
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AN9009 crt horizontal deflection circuit flyback transformer FBT 18 BJT isolated Base Drive circuit TRANSISTORS BJT list KDS5072
Abstract: . Power Supply Voltage Regulator Figure 6. Low-Voltage Auxiliary Regulator © 2014 Fairchild , De-Rating Figure 26. Application #5: 3.3 V Power Supply Thermal Calculation © 2014 Fairchild , Featured Fairchild Product: FHR1200 Direct questions or comments about this evaluation board to: â'Worldwide Direct Supportâ' Fairchild Semiconductor.com © 2014 Fairchild Semiconductor Corporation , . 36 © 2014 Fairchild Semiconductor Corporation 2 FEBFHR1200_SPG01A â'¢ Rev. 1.0.0 List Fairchild Semiconductor
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crt horizontal deflection circuit

Abstract: transistor 9009 notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor , contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet , . 40 10 5 2 Typ. Max. 10 200 30 15 5 1.5 Units µA mA V V MHz V µs ©2000 Fairchild Semiconductor , ], COLLECTOR-EMITTER VOLTAGE Figure 5. Switching Time Figure 6. Safe Operating Area ©2000 Fairchild , 80 70 IC[A], COLLECTOR CURRENT PC[W], POWER DISSIPATION 10000 60 10 IB2 = -IA
Fairchild Semiconductor
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KSD5702 transistor 9009 power BJT 1500v KSD5702TBTU KSD5702YDTBTU AN-9009

all mosfet equivalent book

Abstract: free all transistor equivalent book . And currently, Fairchild produces QFET series using planar technology and low voltage power trench , July, 2000 AN9010 MOSFET Basics By K.S.Oh CONTENTS 1. History of Power MOSFETs , . 35 16) Total Power Dissipation, Linear Derating Factor , . 36 Rev D, July 2000 1 The Bipolar Power Transistor (BPT), as a switching device for power applications, had a few disadvantages. This led to the development of the power MOSFET (Metal Oxide
Fairchild Semiconductor
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all mosfet equivalent book free all transistor equivalent book free transistor equivalent book power bjt advantages and disadvantages vmosfet Drive Base BJT

all mosfet equivalent book

Abstract: P-Channel Depletion Mosfets November 2,1999 AN9010 MOSFET Basics April 1999 R & D 2 Group Fairchild Korea Semiconductor CONTENTS 1. History of Power MOSFETs , . 37 16) Total Power Dissipation, Linear Derating Factor , . 38 Rev C, November 1999 1 The Bipolar Power Transistor as a switching device for a power application had few disadvantages and this led to the development of the power MOSFET ( Metal Oxide
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P-Channel Depletion Mosfets n mosfet depletion 600V fairchild power bjt datasheet MOSFET 800V 10A P-Channel Depletion Mode Field Effect Transistor MOSFET N-CH 200V

P-Channel IGBT

Abstract: PTIGBT 600V 10A was later than its competitors for a power semiconductor company. However, Fairchild Semiconductor was , and 1500V ultra-fast IGBT for 220V power IH applications in 1995. In 1996, Fairchild Semiconductor , ) is inferior to that of the power MOSFETs, but it is superior to that of the BJT. The collector , . 3-1. Advantages, Disadvantages and Characteristics Comparison with BJT and MOSFET , (insulated gate bipolar transistor), power MOSFETs were used in medium or low voltage applications which
Fairchild Semiconductor
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P-Channel IGBT PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 N-Channel jfet 100V depletion

calculation of IGBT snubber

Abstract: RCD snubber IGBT, constructed by adding the P+ layer, has the characteristics of the power transistor (BJT), which , , while IGBT has the advantage over power BJT, which has limitations in high frequency applications due , turn-off c. Gate drive power requirement C. Gate drive layout considerations a. Effect of gate line inductance on the induced turn-on b. Power source stabilizing capacitor c. Isolation problem d. Wiring , , IGBT is easier to drive, and it combines the advantages of MOSFET's faster switching speed and power
Fairchild Semiconductor
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RCD snubber arc welder inverter spot welder circuit diagram full bridge arc welder ARC WELDER RC VOLTAGE CLAMP snubber circuit
Abstract: Figure 20. Power Derating © 2013 Fairchild Semiconductor Corporation FJPF2145 Rev. 1.0.0 , improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to , product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only , FJPF2145 ESBCâ"¢ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description VCS(ON) 2A The FJPF2145 is a low-cost, high-performance power switch designed to provide the best Fairchild Semiconductor
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c 945 TRANSISTOR equivalent

Abstract: FDC655 125 150 175 200 T [ C], CASE TEMPERATURE Figure 20. Power Derating © 2013 Fairchild , without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor , specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference , (1) Description The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBCTM configuration in applications such as: power supplies, motor drivers, smart grid, or
Fairchild Semiconductor
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c 945 TRANSISTOR equivalent ignition drivers
Abstract: TEMPERATURE Figure 20. Power Derating © 2013 Fairchild Semiconductor Corporation FJBE2150D Rev. 1.0.1 , the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I66 © Fairchild Semiconductor , (ON) IC 0.131 V 0.5 A The FJBE2150D is a low-cost, high-performance power switch designed to be used in an ESBCâ"¢ configuration in applications such as: power supplies, motor drivers Fairchild Semiconductor
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Abstract: changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild , contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for , FJP2145 ESBCâ"¢ Rated NPN Power Transistor ESBC Features (FDC655 MOSFET) Description VCS(ON) 2A The FJP2145 is a low-cost, high-performance power switch designed to provide the best performance when used in an ESBCâ"¢ configuration in applications such as: power supplies, motor drivers Fairchild Semiconductor
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fairchild power bjt

Abstract: fjp2160d the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I61 © Fairchild Semiconductor , Transistor Applications · High Voltage and High Speed Power Switch Application · Emitter-Switched Bipolar/MOSFET Cascode Application (ESBCTM) · Smart Meter, Smart Breakers, HV Industrial Power Supplies · Motor Driver and Ignition Driver Description The FJP2160D is a low-cost, high performance power switch
Fairchild Semiconductor
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fdc6551 cascode mosfet switching ESBC J2160D j2160 C 1008 y transistor 150KH
Abstract: Figure 20. Power Derating © 2012 Fairchild Semiconductor Corporation FJP2160D Rev. A0 , improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to , product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only , is a low-cost, high performance power switch designed to provide the best performance when used in an ESBCTM configuration in applications such as: power supplies, motor drivers, Smart Grid, or Fairchild Semiconductor
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1600V

d 42030 transistor

Abstract: AN-7505 TEMPERATURE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation Figure 6. Power , *POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES , time without notice in order to improve design. This datasheet contains final specifications. Fairchild , datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The , the Performance of the ML6440 (332 K) Jul 19, 2002 AN-4111: AN-4111 Fairchild Power Switch Single Chip
Fairchild Semiconductor
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FAN6800 d 42030 transistor AN-7505 220v ac to 48v dc smps AN3008 Fairchild AN-7528 BUT11/11A BUT11 BUT11A AN-9019 AN-140 AN-4101

pt 4115 led driver

Abstract: an7527 ® VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO , design. This datasheet contains specifications on a product that has been discontinued by Fairchild , (493 K) Jul 19, 2002 AN-4103: AN-4103 A Fairchild Power Switch (SPS) Based Switched Mode Power Supply , Motherboards (143 K) Jul 19, 2002 AN-4116: AN-4116 A Fairchild Power Switch (SPS) based on Switched Mode Power , ) Jul 19, 2002 AN-4108: AN-4108 A Fairchild Power Switch based on Switched Mode Power Supply for CRT
Fairchild Semiconductor
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pt 4115 led driver an7527 AN-7527 AN-7501 an5043 AN-7502 BUT12/12A BUT12 BUT12A 54TYP AN-822 AN-881

IXAN0063

Abstract: IGBT THEORY AND APPLICATIONS make use of the advantages of both Power MOSFET and BJT, the IGBT has been introduced. It's a functional integration of Power MOSFET and BJT devices in monolithic form. It combines the best attributes , loss and low switching loss. The main advantages of IGBT over a Power MOSFET and a BJT are: 1. It has , of a Power MOSFET and superior to that of a BJT. The collector current tailing due to the minority , similarities, the operation of an IGBT is closer to that of a power BJT than a power MOSFET. It is due to the
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IXAN0063 IGBT THEORY AND APPLICATIONS MOSFET IGBT THEORY AND APPLICATIONS schematic diagram UPS IGBT transistor igbt Mohan power electronics converters applications a 2001I

ka3525 12v to 230v inverters circuit diagrams

Abstract: smps circuit diagram 450w .3 Fairchild Power Switch (FPSTM , mode power supplies. Whether your design is 1W or 1200W, Fairchild's solutions help achieve increased , sink size, Green Fairchild Power Switch (FPS) that offers state-of-the-art stand-by power supporting , Fairchild Power Switch Output Rectifier or MOSFET Optocoupler Programmable output voltages , ) Optically Isolated Error Amplifier Fairchild Power Switch (FPS) · Green FPS reduces power consumption
Fairchild Semiconductor
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ka3525 12v to 230v inverters circuit diagrams smps circuit diagram 450w KA3525 KA3525 inverter FSD210 dip-8 KA3525A E-171 18F-A 247TM
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