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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

f36 transistor

Catalog Datasheet MFG & Type PDF Document Tags

NJ450

Abstract: D45 TRANSISTOR Databook.fxp 1/13/99 2:09 PM Page F-36 F-36 01/99 NJ450 Process Silicon Junction Field-Effect Transistor ¥ LOW R(on) Switch ¥ Low-Noise, High Gain Amplifier S-D Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts G 10 mA +150°C ­ 65°C to +175°C Devices in this Databook based on the NJ450 Process. S-D , /13/99 2:09 PM Page F-37 F-37 01/99 NJ450 Process Silicon Junction Field-Effect Transistor
InterFET
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2SK363 IFN146 IFN147 IFN363 J110A D45 TRANSISTOR f36 transistor J108
Abstract: â y/ } rtf, wrr=r< £7 Ã' whmmmmmv Mm PA2 Series W/TIP-29C (TO-220) TRANSISTOR i , DESCRIPTION OF CURVES A. N.C. Horiz.Device Only Mounted to G-10. B. N.C. Horlz. & Vert. With Dissipator. C. 200 FPM w/Diss. D. 500 FPM w/Diss. E. 1000 FPM w/Dlss. 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 POWER , -29C (TO-220) TRANSISTOR r B 1 / 1 / t /c D f / / / A E , -220 3.0 PB1-3U PB1-3CB PB1-3B PB1-3 F-36 or MS9 3.0 Note: See page I* for other finishes. 2-5 -
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T0-126 T0-127 T0-220

PB13B

Abstract: pb1l PA2 Series PA2.1U w/TIP-29C (TO-220) TRANSISTOR 'I/AI:BI;-';'-t,.£Q Gl10 ~ 100 ~ 71 90 w ~ 0 1 / D. 500 FPM w/Diss. 7t7r7I E. 1000 FPM w/Diss. 2 3 4 5 6 7 8 9 10111213 Ordering Information ~ IERC PART NO. 31 .L Unpfated (7.87) r 1415 POWER DISSIPATED (WATTS) Resistance Case to Sink is 0.9.1.1 °C/W w , (1082) Undrllled One 1O-126, 1O-127 or TO-220 One or two 1O-126, 1O-127 or 1O-220 F-36 or MS9
IERC
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PB13B pb1l

f36 marking transistor

Abstract: MBT5550 M O T O R O L A SC -CXSTRS/R F36 3 6 7 2 54 MOTOROLA M A XIM U M RATINGS Rating Collector-Emltter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Sym bol VCEO VcBO vebo Tb DE | b 3 b 7 2 5 4 OOflEDSO 3 96D 8 2 0 5 0 D SC , Tj/ Tstq 417 150 HIGH VOLTAGE TRANSISTOR N PN SILICON ·FR-5 = 1.0 x 0.75 x 0.62 in
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MBT5550 f36 marking transistor 2n5550 sot23 mmbt5551 BT5550 MMBT5551 2N5550 MMBT5550
Abstract: HIGH SPEED LOAD/STRAIN METERS AND PROCESS/VOLTMETERS DUAL DIFFERENTIAL INPUTS AVAILABLE DP7600 725 $ Model DP7600 shown smaller than actual size with Model LC105 Load Cell ($295), see page F-36 Model Shown MADE IN USA ß 1,000 Readings Per Second Maximum ß 5-Digit Display , contacts. (Isolated transistor outputs not available when relays are installed.) Limit #1 and Limit #2 , Outputs: Four isolated open collector transistor outputs rated 30 Vdc maximum. Will sink up to 50 mA Omega Engineering
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RS-232 RS-485

transistor BC 567

Abstract: transistor BC 339 AO5404E N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5404E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5404E and AO5404EL are electrically identical. VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS , #18;+#29;
Alpha & Omega Semiconductor
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transistor BC 567 transistor BC 339 ED-7 SC89-3L 56555E 5655E 192956C 565555E

transistor smd f36

Abstract: 10UF PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Cree's CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , Performance Typical EVM and Efficiency of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz F=3.6 GHz
Cree
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transistor smd f36 10UF 33UF CGH35015-TB CGH35015 tRANSISTOR 2.7 3.1 3.5 GHZ cw CGH3501 CGH35015F-TB

transistor BC 567

Abstract: transistor BC 568 AO5804E Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AO5804E/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. AO5804E and AO5804EL are electrically identical. VDS (V) = 20V ID = 0.5 A (VGS = 4.5V) RDS ,
Alpha & Omega Semiconductor
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transistor BC 568 5E55 SC-89-6 AE91D 3D6943 D91A3 091CE2

ATC600S100JW

Abstract: ATC600S100J RoHS Compliant 3.4-3.8 GHz 10 W Power PHEMT Advanced Datasheet Oct. 10, 2005 MAAP-003438-010PP0 Package PFQN-16 Lead Features · This RF Power transistor is an unmatched GaAs PHEMT which exhibits high gain and linearity performance in a lead-free 3mm 16-lead PQFN surface mount plastic package , basestation applications · Contains thermally-coupled reference transistor to allow simple current mirror , 170 mA f=3.6 GHz, 8.5 P/A 3GPP W-CDMA 8 s = 0.946 /_ -169.0°, 8 L= 0.885 /_ 179.5° -20 -30
M/A-COM
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ATC600S100JW ATC600S100J m 53206 MCR10EZHF49R9 ATC600S10 ECD-G0ER709
Abstract: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed , makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , Performance Typical EVM and Efficiency of CGH35015F in Broadband Amplifier Circuit at 3.6 GHz F=3.6 GHz , not source and load pull of the transistor itself. CGH35015F-TB Demonstration Amplifier Circuit Cree
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35015S
Abstract: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28 V, GaN HEMT for WiMAX Creeâ'™s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed , makes the CGH35015 ideal for 3.3-3.9 GHz WiMAX and BWA amplifier applications. The transistor is , Broadband Amplifier Circuit at 3.6 GHz F=3.6 GHz, 802.16-2004 OFDM, P/A=9.8 dB WiMax EVM & Eff. vs. Pout , the CGH35015F-TB demonstration circuit and are not source and load pull of the transistor itself Cree
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48v to 230v inverters circuit diagram

Abstract: 300v dc 230v ac inverter (Option) , Transistor output (2 points): RUN, FAR, FDT, OL, LU, TL, etc. Relay output (1 point , and stops. · The digital inputs can directly connect to source type output (PNP transistor output , current: 0.5mA) · The digital inputs can directly connect to source type output (PNP transistor output , and stops. · The digital inputs can directly connect to source type output (PNP transistor output , current: 0.5mA) · The digital inputs can directly connect to source type output (PNP transistor output
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48v to 230v inverters circuit diagram 300v dc 230v ac inverter overcurrent inverter protection single phase 400V, DC -230V, AC INVERTER 3 phase, 415v and 45 kw motor ELCB 3 phase CONNECTION DIAGRAM RS485 50/60H R133R750W DBR105R90W DBR210R150W DBR50R220W
Abstract: PRELIMINARY CGH35015F 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH35015F is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015F ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , Amplifier Circuit at 3.6 GHz F=3.6 GHz, 802.16-2004 OFDM, P/A=9.8 dB WiMax EVM & Eff. vs. Pout at 3.6GHz Cree
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Abstract: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , Amplifier Circuit at 3.6 GHz F=3.6 GHz, 802.16-2004 OFDM, P/A=9.8 dB WiMax EVM & Eff. vs. Pout at 3.6GHz Cree
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Abstract: PRELIMINARY CGH35015 15 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX Creeâ'™s CGH35015 is a gallium nitride (GaN) high electron mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, which makes the CGH35015 ideal for 3.3-3.9GHz WiMAX and BWA amplifier applications. The transistor is , Performance Typical EVM and Efficiency of CGH35015 in Broadband Amplifier Circuit at 3.6 GHz F=3.6 GHz Cree
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35015P

BU206

Abstract: BU205 [ATOROLA SC iXSTRS/R F36 3 6 7 2 5 4 , MOTOROLA SC (XSTRS/R F) 96D Dlf|b3b7S54 flObbO T 80660 D T - 3 S If MOTOROLA TECHNICAL DATA SEMICONDUCTOR BU204 BU205 ; ÄiSül ) ( » .* > i g i i í » t á : i 8 l H H ' t , 2JS AM PERE HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTORS 1300 AND 1500 V O LTS 36 W ATTS . . . specifically designed for use , voltage loading must also be taken into account. If the base of the output transistor is driven by a very
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BU206
Abstract: high gain of the LDMOS power transistor. LDMOS also has a better temperature stability than bipolar , 2002 2004 Year 2006 2008 2010 Figure 4: Gain improvement at f=3.6 GHz for the , generations. The gate length has been dramatically reduced to increase the gain of the transistor via an , high current densities during operation. The degradation is measured for a transistor at bias , overview of preferred transistor technologies for design-ins in the year 2008 as a function of power and NXP Semiconductors
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IEDM2006

diagram of LED matrix using 4017

Abstract: 4017-DECADE COUNTER 2N2905/PNP transistor stage is connected as an emitter follower which 1 av 18 2007-11-08 07:21 , transistor which then supplies 2 or more amps to the 12 volt lamp. The voltage across the PNP transistor , idle on a single output. The 2N3055 power transistor operates as a switch and drops very little , /Bill_Bowden/page5.htm#clock.gif Menu Two Transistor LED Flasher 5 av 18 2007-11-08 07:21 http , waveform is generated at pin 1 of the LM1458 IC and buffered with an emitter follower transistor stage
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diagram of LED matrix using 4017 4017-DECADE COUNTER ic 4017 decade counter datasheet ic 4017 IRFZ44 mosfet IRFZ44 mosfet for square wave inverter CD4516 74HC138 74HCT138 74HC14 74HCT14 2N3053

4017 COUNTER IC

Abstract: ic 4017 decade counter 2N2905/PNP transistor stage is connected as an emitter follower 1 av 18 2007-12-30 07:11 http , supplies about 80 mA of current to the base of the 2N3055 NPN power transistor which then supplies 2 or more amps to the 12 volt lamp. The voltage across the PNP transistor will be about 7 volts when it is , power transistor operates as a switch and drops very little voltage (less than 0.5) when conducting, and , :// Menu Two Transistor LED Flasher 5 av 18 2007-12-30 07
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4017 COUNTER IC ic 4017 decade counter ic 4017 PIN DIAGRAM power inverter schematic diagram irfz44 4017 decade counter with 10 decoded outputs IC 4017 decoder ic 1N4001 2N2219A

PLC ELEVATOR CONTROL

Abstract: plc based automatic car parking system control terminals: Digital input (9 points), transistor output (4 points) and relay contact output (1 , Jogging operation · Running status signal Transistor output (4 points) or key, FWD or REV , transistor output Analog output (1 point) : Output frequency, output current, output torque, etc , ) (FWD/REV, IL, VL/LU, TL) · Transistor output terminal condition · Er7 (Output phase loss error , (+24V, maximum 100mA) 12 JAGUAR VXM Symbol Analog output Pulse Output Transistor
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PLC ELEVATOR CONTROL plc based automatic car parking system imo jaguar inverters 750 vxm user manual 30KW Inverter Diagram imo jaguar inverters 750 800 kva inverter diagrams VXM160K VXM132K VXM200K VXM220K VXM280K VXM315K
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