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OPA2137EA/250G4 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP visit Texas Instruments
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eudyna GaAs FET Amplifier

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eudyna GaAs FET Amplifier

Abstract: Eudyna Devices FLL2400IU-2C L-Band High Power GaAs FET FEATURES · · · · Push-Pull Configuration High , . DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that offers ease of , dB - 0.45 0.65 °C/W FLL2400IU-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER , Frequency (GHz) 2 44 46 48 FLL2400IU-2C L-Band High Power GaAs FET S-PARAMETERS VDS = , push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier
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eudyna GaAs FET Amplifier Eudyna Devices

FLL1500IU-2C

Abstract: eudyna GaAs FET Amplifier calculated Push-Pull S-Parameter amplifier designs. 3 FLL1500IU-2C L-Band High Power GaAs FET Case , FLL1500IU-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull design that , +175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs , -2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER -25 -30 -35 VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA
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FLL1200IU-3

Abstract: FLL1200IU-3 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design , CASE STYLE: IU Edition 1.5 October 2004 1 FLL1200IU-3 L-Band High Power GaAs FET OUTPUT , ) Total Power Dissipation (mW) 200 FLL1200IU-3 L-Band High Power GaAs FET IMD vs. OUTPUT POWER , FLL1200IU-3 L-Band High Power GaAs FET Case Style "IU" 23.9±0.25 (0.941) 3 0.1 (0.004
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FLL1500IU-2C

Abstract: FLL1500 FLL1500IU-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull , Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs , Power GaAs FET ACPR vs. OUTPUT POWER VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA Single Signal , 44 add (%) -25 IMD vs. OUTPUT POWER -35 FLL1500IU-2C L-Band High Power GaAs FET
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FLL1500 imt 901

FLL800IQ-2C

Abstract: fll800 FLL800IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull , % - 0.8 1.1 °C/W FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER , VDS = 12V IDS = 2.0A Wide Band Tuned FLL800IQ-2C L-Band High Power GaAs FET S-PARAMETERS , . 3 FLL800IQ-2C L-Band High Power GaAs FET Case Style "IQ" ­0.2 24.0 20.4 ­0.2 2
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fll800

FLL810IQ-3C

Abstract: FLL810IQ-3C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull , 11.5 15.0 A - 0.8 1.1 °C/W FLL810IQ-3C L-Band High Power GaAs FET IMD & IDS , f1 = 2.61GHz add (%) 50 VDS = 12V IDS = 5A FLL810IQ-3C L-Band High Power GaAs FET , push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier
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L-Band

Abstract: FLL810IQ-4C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration High Power , Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design which , Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , Pin = 43.0dBm 8.5 - Channel to Case - 1 FLL810IQ-4C L-Band High Power GaAs FET , -4C L-Band High Power GaAs FET S-PARAMETERS VDS = 12V, IDS = 2500mA S21 S12 MAG ANG MAG ANG 1.973 1.880
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L-Band

Eudyna Devices power amplifiers

Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , FLL400IP-2 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 120 OUTPUT POWER & add vs , 20dBm 25dBm Frequency (GHz) 2 add (%) FLL400IP-2 L-Band Medium & High Power GaAs FET IMD , Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 22±0.2 (0.866) 18.6±0.2 , A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs
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Eudyna Devices power amplifiers

fll120

Abstract: FLL1200IU-3 FLL1200IU-3 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , AB operation. DESCRIPTION The FLL1200IU-3 is a 120 Watt GaAs FET that employs a push-pull design , Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs , CASE STYLE: IU Edition 1.5 October 2004 1 FLL1200IU-3 L-Band High Power GaAs FET OUTPUT , ) Total Power Dissipation (mW) 200 FLL1200IU-3 L-Band High Power GaAs FET IMD vs. OUTPUT POWER
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fll120

842 FET

Abstract: L-Band FLL600IQ-2 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers , Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , Point Edition 1.8 October 2004 1 FLL600IQ-2 L-Band High Power GaAs FET POWER DERATING CURVE , FLL600IQ-2 L-Band High Power GaAs FET IMD vs. OUTPUT POWER -28 -32 -36 -40 -44 -48 -52 -56 -60 26 VDS =
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842 FET

FLL810IQ-4C

Abstract: FLL810IQ-4C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull , Power GaAs FET OUTPUT POWER vs. FREQUENCY IMD & IDS(RF) vs. TOTAL OUTPUT POWER -24 50 , ) VDS = 12V, IDS(DC) = 5A FLL810IQ-4C L-Band High Power GaAs FET FREQUENCY (MHZ) 2500 2600 , push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier
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FLL810IQ-3C

Abstract: Eudyna Devices FLL810IQ-3C L-Band High Power GaAs FET FEATURES · · · · · · Push-Pull Configuration , . Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull , Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The drain-source , 11.5 15.0 A - 0.8 1.1 °C/W FLL810IQ-3C L-Band High Power GaAs FET IMD & IDS , f1 = 2.61GHz add (%) 50 VDS = 12V IDS = 5A FLL810IQ-3C L-Band High Power GaAs FET
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eudyna fet

Eudyna Devices power amplifiers

Abstract: FLL600IQ-2 amplifier designs. 3 FLL600IQ-2 L-Band High Power GaAs FET 1 2.0 (0.079) ±0.15 4 5 , FLL600IQ-2 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design , .: Gain Compression Point 1 FLL600IQ-2 L-Band High Power GaAs FET OUTPUT POWER & add vs. INPUT , VDS = 12V IDS = 4.0A f = 1.96GHz FLL600IQ-2 L-Band High Power GaAs FET IMD vs. OUTPUT POWER
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FLL800IQ-2C

Abstract: 601 121 FLL800IQ-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL800IQ-2C is a 80 Watt GaAs FET that employs a push-pull , °C Eudyna recommends the following conditions for the reliable operation of GaAs FETs: 1. The , % - 0.8 1.1 °C/W FLL800IQ-2C L-Band High Power GaAs FET ACPR vs. OUTPUT POWER , VDS = 12V IDS = 2.0A Wide Band Tuned FLL800IQ-2C L-Band High Power GaAs FET S-PARAMETERS
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601 121

Eudyna Devices power amplifiers

Abstract: eudyna GaAs FET Amplifier FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , . Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a , Tch +175 °C Eudyna recommends the following conditions for the reliable operation of GaAs , CASE STYLE: IU Edition 1.8 October 2004 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET , Dissipation (mW) 200 FLL1200IU-2 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER VDS = 12V
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Eudyna high power

FLL1500

Abstract: fujitsu l-band power fets FLL1500IU-2C L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , class AB operation. DESCRIPTION The FLL1500IU-2C is a 150 Watt GaAs FET that employs a push-pull , Power GaAs FET ACPR vs. OUTPUT POWER VDS = 12V IDS = 4.0A fo = 2.14GHz W-CDMA Single Signal , 44 add (%) -25 IMD vs. OUTPUT POWER -35 FLL1500IU-2C L-Band High Power GaAs FET , push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier
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fujitsu l-band power fets

FLL600IQ-3

Abstract: Push-Pull S-Parameter amplifier designs. 3 FLL600IQ-3 L-Band Medium & High Power GaAs FET 2 , FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers , Power GaAs FET OUTPUT POWER & add vs. INPUT POWER 140 50 49 120 VDS = 12.0V IDS = 4.0A f , CURVE FLL600IQ-3 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER -28 -32 VDS = 12V
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Eudyna Devices power amplifiers

Abstract: C4727 FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration , Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , October 2004 G.C.P.: Gain Compression Point 1 FLL400IP-2 L-Band Medium & High Power GaAs FET , FLL400IP-2 L-Band Medium & High Power GaAs FET IMD (dBc) IMD vs. OUTPUT POWER -12 -14 -16 -18 , Medium & High Power GaAs FET Case Style "IP" Metal-Ceramic Hermetic Package 2-1 (0.039) 3 6
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C4727

FLL1200IU-2

Abstract: FLL1200IU-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull , . Suitable for class AB operation. DESCRIPTION The FLL1200IU-2 is a 120 Watt GaAs FET that employs a , CASE STYLE: IU Edition 1.8 October 2004 1 FLL1200IU-2 L-Band Medium & High Power GaAs FET , Dissipation (mW) 200 FLL1200IU-2 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER VDS = 12V , push-pull FET. These parameters should be used to determine the calculated Push-Pull S-Parameter amplifier
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L-Band

Abstract: Eudyna Devices power amplifiers FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High , operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers , +175 Unit V V W °C °C Eudyna recommends the following conditions for the reliable operation of GaAs , -3 L-Band Medium & High Power GaAs FET POWER DERATING CURVE 140 OUTPUT POWER & add vs. INPUT POWER 50 , FLL600IQ-3 L-Band Medium & High Power GaAs FET IMD vs. OUTPUT POWER -28 -32 -36 -40 -44 -48 -52 -56 -60
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