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ISL6613CRZ-T Intersil Corporation Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features; DFN10; Temp Range: 0° to 70° visit Intersil Buy
ISL6612ECBZ-T Intersil Corporation Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6612CBZ Intersil Corporation Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6612CBZA-T Intersil Corporation Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6612CRZ Intersil Corporation Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy
ISL6612CRZ-T Intersil Corporation Advanced Synchronous Rectified Buck MOSFET Drivers with Protection Features; DFN10, SOIC8; Temp Range: See Datasheet visit Intersil Buy

esd protect mosfet

Catalog Datasheet MFG & Type PDF Document Tags

Tablet

Abstract: SI4925 -13L VEMI65AB-xxx 6-Channel EMI-Filter with ESD protect Vrrm= 5V, Low load cap Cin< 40pf IR< 1uA, Rs= 100 ohm , -13L VEMI65AC-xxx 6-Channel EMI-Filter with ESD protect Vrrm= 5V, Low load cap Cin< 20pf IR< 1uA, Rs= 100 ohm , -17L VEMI85AB-xxx 8-Channel EMI-Filter with ESD protect Vrrm= 5V, Low load cap Cin< 40pf IR< 1uA, Rs= 100 ohm , BiSy, Single-Line ESD Protect Diode Vrrm= 5V, load capacitance Cd= 0.3pf leakage curr. IR < 0.1uA , Features Package VCUT0505B-HD1 BiSy, Single-Line ESD Protect Diode Vrrm= 5V, Low load cap Cd
Vishay Intertechnology
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Tablet SI4925 QFN-10L QFN-16 A4444DJT SC-70 SC-70-6L S412DN-T1-GE3

maxim rs232 protection overvoltage

Abstract: 2.5V to 5.5V RS-232 Tranceivers thinking and suggests practical ways to protect electronic systems. The Laws of Physics and EOS/ESD We , and the number of ESD-damaged parts plummeted. EOS/ESD Protection in an IC How do we protect electronics from ESD and EOS? The ESD structures inside an IC are designed to protect the part before the , Mar 02, 2011 APPLICATION NOTE 4991 Oops.Practical ESD Protection vs. Foolhardy Placebos By: Bill Laumeister Abstract: Electrical overstress (EOS) and electrostatic discharge (ESD) are
Maxim Integrated Products
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maxim rs232 protection overvoltage 2.5V to 5.5V RS-232 Tranceivers abstract and introduction rs 422 j1708 convert to rs232 MAX3490 DIE esd protect mosfet S-422 MAX488 RS-485/RS-422 MAX491E MAX6397 MAX6398

suppressor 33v

Abstract: CAR ALTERNATOR active REGULATOR with leaded suppressors. To protect the output of the MOSFET, the ML suppressor is connected between , must be less than the minimum breakdown voltage of the MOSFET. For example, to protect against , the transient V-I curves of the ML data sheet, this will protect a MOSFET with a 60V minimum , PROTECTION Additionally an ML suppressor can be used to protect the input of a discrete MOSFET from the threat of an ESD transient. In the protection of a MOSFET driven with a 10V gate drive, the V14MLA1206
Littelfuse
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AN9108 AN9307 suppressor 33v CAR ALTERNATOR active REGULATOR Transient Voltage Suppression Devices, Harris CAR ALTERNATOR REGULATOR EMI suppressor AN9003 AN9312 DB450

AN9108

Abstract: AN9312 with leaded suppressors. To protect the output of the MOSFET, the ML suppressor is connected between , must be less than the minimum breakdown voltage of the MOSFET. For example, to protect against , the transient V-I curves of the ML data sheet, this will protect a MOSFET with a 60V minimum , PROTECTION Additionally an ML suppressor can be used to protect the input of a discrete MOSFET from the threat of an ESD transient. In the protection of a MOSFET driven with a 10V gate drive, the V14MLA1206
Littelfuse
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2.5kV ZENER DIODE Transient Voltage Suppressor diode application no V26MLA1206 V33MLA1206 V68MLA1206 varistor 103 2kv

varistor 103 2kv

Abstract: Transient Voltage Suppression Devices, Harris the MOSFET. For example, to protect against transients on a 28V ±10% supply, the V33MLA1206 ML , will protect a MOSFET with a 60V minimum breakdown from an approximate 10A transient pulse. TO LOAD , CMOS IC Additionally an ML suppressor can be used to protect the input of a discrete MOSFET from the threat of an ESD transient. In the protection of a MOSFET driven with a 10V gate drive, the V14MLA1206 or V14MLA1210 suppressor should be connected from gate to source. These devices will protect against ESD pulses
Harris Semiconductor
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24v vehicle ignition switches AN-910 Harris Semiconductor TRANSIENT SURGE SUPPRESSOR voltage suppressor 24V alternator load dump DIODE 1334 LM ISO9000 1-800-4-HARRIS

IntelliFET

Abstract: '" adding intelligence Self-protected MOSFETâ'™s add intelligence to the standard MOSFET by incorporating : Over-voltage Protection Over-current Protection Over-temperature Protection Human B d ESD Protection H , ESD protection Over current Over-current protection Overtemperature protection. dV/dt limit Logic S Figure 2 â'" typical self protected MOSFET block diagram Project Next Step RS v18_Dr , Clamping 5V IN Over Current Over-Current Protection ESD Over-Temperature Protection S
Diodes
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IntelliFET ZXMS6004FFTA ZXMS6004FF ZXMS6004DG ZXMS6004SG ZXMS6004DT8

SCHEMATIC POWER SUPPLY WITH mosfet

Abstract: MOSFET ESD Rated from gate to source can protect the MOSFET from input transients. Choose a suppressor with a working voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , ://www.semtech.com Transient Protection of MOSFETS One of the most common causes of failure in MOSFET devices , cause transients which can force VDS to exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. Drain-Source
Semtech
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SCHEMATIC POWER SUPPLY WITH mosfet MOSFET ESD Rated the mosfet 652 diode TRANSIENT mosfet tvs-diode SI96-13
Abstract: from gate to source can protect the MOSFET from input transients. Choose a suppressor with a wotking voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , : 805-498-3804 Transient Protection of M O SFETS One of the most common causes of failure in MOSFET devices , can cause transients which can force VD to S exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche -
OCR Scan

SCHEMATIC POWER SUPPLY WITH mosfet

Abstract: TVS Diode from gate to source can protect the MOSFET from input transients. Choose a suppressor with a working voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , MOSFETS One of the most common causes of failure in MOSFET devices results from exceeding the maximum , VDS to exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. l Gate-Source Protection Transient on
Semtech
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TVS Diode MOSFET "CURRENT source" mosfet diagram power supply silicon diode load

SI96-13

Abstract: SCHEMATIC POWER SUPPLY WITH mosfet gate to source can protect the MOSFET from input transients. Choose a suppressor with a working voltage which exceeds the MOSFET input voltage. For suppression of ESD, a device rated at 300W (tp = 8 , recommended. One of the most common causes of failure in MOSFET devices results from exceeding the maximum , VDS to exceed the maximum breakdown voltage of the MOSFET. If the transient contains enough energy, the MOSFET will be destroyed if it begins to avalanche. Gate-Source Protection Transient on the
Semtech
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Switching Power Supply Schematic Diagram mosfet 300w TVS diode Application Note 300w power diode 10 A power MOSFET
Abstract: extra heat sink PMDP58UPE â'" Dual P-ch ESD protected MOSFET } ESD protected MOSFET of > 2 kV HBM , addition, a Zener or ESD protection diode can be placed in parallel to the battery to protect it against , / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL PESD24VF1BL PESD18VF1BSF , with integrated ESD protection PCMF2DFN1 PCMF3DFN1 DFN2520 DFN4020 11 Integrated or , highspeed TMDS lines PUSB3F96 DFN2510 12 SIM Card protection ESD protection diodes with and NXP Semiconductors
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PESD24VF1BSF DFN1006 DSN0603 IP4369CX4 IP4303CX4 IP4282CZ6

ld7535

Abstract: SG5848 protect the power MOSFET. RS2051 is offered in SOT-23-6L, SOT-8 and DIP-8 packages. Features Low Cost , soft clamp technology is introduced to protect the periphery power MOSFET from breaking down and , 16.5V VDD over voltage protect 25.6V Cycle-by-cycle current limiting Sense Fault Protect ion OTP , ) Latch mode After OLP&SCP High-Voltage CMOS Process with ESD Applications Switching AC/DC Adaptor , sense the MOSFET current Supply voltage pin Totem output to drive the external Power MOSFET
Orister
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DS-RS2051-02 ld7535 SG5848 OB2262 Chip-Rail SG6848 ob2278

SG6848

Abstract: "Application Note" and SG6848 driver that can drive a MOSFET gate directly. It is also equipped with a voltageclamping Zener diode to protect the MOSFET from damage caused by undesirable over-drive voltage. The output voltage is clamped , Pulse-by-pulse current limiting ensures safe operation even during short-circuit conditions. To protect the external power MOSFET from being damaged by excessive supply voltage, the output driver is clamped at 17V , smaller peak inductor currents than in DCM, allowing a small-sized transformer and a low-rated MOSFET to
Fairchild Semiconductor
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AN-6860 SG6860 start-up transformer current limiter DCM flyback transfer function SG6848 equivalent 90VAC 264VAC

SG6848

Abstract: "Application Note" and SG6848 safe operation even during short circuits. To protect the external power MOSFET from being damaged by , Gate Drive The SG6858's output stage is a fast totem-pole driver that can drive a MOSFET gate directly. It is also equipped with a voltage clamping Zener diode to protect the MOSFET from damage , inductor currents than in DCM; therefore, a small-sized transformer and a low-rated MOSFET can be applied , prevent oscillations at the MOSFET gate terminal. One side Primary aux winding Primary main
Fairchild Semiconductor
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AN-6858 an6858 sg6848 fairchild SOT26 PWM SG6858--

"Application Note" and SG6859

Abstract: SG6859A strictest power conservation requirements. To protect the external power MOSFET from being damaged by , equipped with a voltage clamping Zener diode to protect the MOSFET from damage caused by undesirable , low-rated MOSFET can be applied. On the secondary side of the transformer, the rms output current of DCM , proportional to the MOSFET current develops on the current-sensing resistor, RS. Each time the MOSFET is turned on, a spike induced by the diode reverse recovery and by the output capacitances of the MOSFET
Fairchild Semiconductor
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AN-6859A SG6859A SG6859 Green-Mode PWM Controller sot-26 TV flyback transformer

8038 DIP

Abstract: ic 8038 APPLICATIONS . It is also equipped with a voltage clamping Zener diode to protect the MOSFET from damage caused by , . The value of the biasing resistor Rb is determined as follows. To protect the external power MOSFET from being damaged by excessive supply voltage, the output driver is clamped at 17V. SG6859D , MOSFET can be applied. On the secondary side of the transformer, the rms output current of DCM can be , proportional to the MOSFET current develops on the current-sensing resistor, RS. Each time the MOSFET is
Fairchild Semiconductor
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8038 DIP ic 8038 APPLICATIONS of ic 8038 8038 ic lc 8038 8038 APPLICATIONS AN-8038

Transient Voltage Suppression Devices, Harris Sup

Abstract: 24V alternator load dump protector suppressors. To protect the output of the MOSFET, the ML suppressor is connected between the drain and , less than the minimum breakdown voltage of the MOSFET. For example, to protect against transients on a , transient V-I curves of the ML data sheet, this will protect a MOSFET with a 60V minimum breakdown from an , input of a discrete MOSFET from the threat of an ESD transient. In the protection of a MOSFET driven , source. These devices will protect against ESD pulses of 2kV to 25kV. Infrequent ±24V
Harris Semiconductor
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Transient Voltage Suppression Devices, Harris Sup 24V alternator load dump protector Transient Voltage Suppressor application notes transient voltage suppressor diode ZENER DIODE t2 6j Alternator regulator AN9002

transistor bjt 331

Abstract: 12v dc to dc mobile charger circuit polarity protection, ESD protection Abstract This application note illustrates how to protect a , rail-to-rail ESD protection device can be used to protect all the lines of a USB OTG port. USB connector , of protection devices in order to protect against ESD, overvoltage and reverse polarity at a charger , Semiconductors' low VCEsat (BISS) is less sensitive to ESD damage compared to the MOSFET without internal ESD , battery charger topologies, particularly with external bypass transistors and ways to effectively protect
NXP Semiconductors
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transistor bjt 331 12v dc to dc mobile charger circuit YDT1591-2006 PMV65XP PBSS304PX Drive Base BJT AN10910

LCDA05

Abstract: mosfet switch circuit diagram switches are high-side nchannel MOSFET switches with built-in overcurrent protection and low on-state , MOSFET switch with low R DS(ON) Short-circuit current protection Internal thermal shutdown , : Output MOSFET Drain. Connect to supply voltage. Power switch output: Output MOSFET Source. Connect to , ) This device is ESD sensitive. Use of standard ESD handling precautions is required. 3 © 2000 , MOSFET with a low on-state resistance for meeting USB voltage regulation requirements. It available
Semtech
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SC5826 SRDA05-4 LCDA05 SC5203 SC5205 MS-012AA mosfet switch circuit diagram
Abstract: rail-to-rail ESD protection device can be used to protect all the lines of a USB On-The-Go (OTG) port. USB , offers a wide range of protection devices in order to protect against ESD, overvoltage and reverse , transistor. NXP Semiconductorsâ'™ low VCEsat BISS is less sensitive to ESD damage compared to the MOSFET , ), overvoltage protection, reverse polarity protection, ESD protection Abstract This application note illustrates how to protect a mobile device charger port against overvoltage and reverse polarity and gives an NXP Semiconductors
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