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Part Manufacturer Description Datasheet BUY
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

equivalent transistor

Catalog Datasheet MFG & Type PDF Document Tags

ERI - 35 - 2 YE 0515

Abstract: transistor 2SC2458 ] Quick Selector Guide 3. Quick Selector by Package Internal Equivalent Transistor : 2SA1832 M a , Internal Equivalent Transistor : 2SC4116 VCE (sat) max. fT TYP. Vc e Cob TYP. VCB M arking ÏC (V , Equivalent Transistor : 2SA1586 V C E (sat) MAX. !C (V) - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 , .1 -0 .1 -0 .1 - Internal Equivalent Transistor : 2SA1873 V c E (s a t) MAX. ic (V) - 0 .3 - 0 , Internal Equivalent Transistor : HN1C01FU v C E (sat) MAX. ic (V) 0.3 0-3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
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ERI - 35 - 2 YE 0515 transistor 2SC2458 2SC3326 MQ SC-62 2SA1314 diode marking YF 80MIN 120-4O RN1001 RN2001 RN1002 RN2002

FeRAM

Abstract: PTSC0007 Flexibility MPG - PTSC0007 - 009 - 3 ® Floating Gate Transistor Equivalent transistor Id Floating gate transistor Neutral Vcg Gate coupling ratio g = Cpp / Ctot Vfg = g x Vcg Id , oxide field ® Double Poly EEPROM Cell Double Poly ­ Two transistor cell Programming and Erasing , limitation will come soon due to high voltage transistor cell Multi-value cell capability Short programming time (~10ms) But Cell transistor must withstand high voltages Very high programming current
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FeRAM BUT 11 Transistor stmicroelectronics eeprom world transistor equivalent and data equivalent transistor

Marcon capacitor Co

Abstract: CACFM ^F), Marcon Electric Co., Ltd. or equivalent. Transistor: 2SC3279, Toshiba Corp. or equivalent. 6 , : CACFM1A220M (22 ¿/F), Marcon Electric Co., Ltd. or equivalent. Transistor: 2SC3279, Toshiba Corp. or , . Transistor: 2SC3279, Toshiba Corp. or equivalent. 7 STEP-UP SWITCHING REGULATORS S-8435/8436 Series_ 11 , . Transistor: 2SC3279, Toshiba Corp. or equivalent. 12. S-8436FF-YK-X (Unless otherwise specified : Ta = 25 , ), Marcon Electric Co., Ltd. or equivalent. Transistor: 2SC3279, Toshiba Corp. or equivalent. 8 STEP-UP
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2SK1112 Marcon capacitor Co CACFM D1N54 2SC3279 equivalent CACFM 1A220M S-8435 RCH654 RCH855 47//H

gummel

Abstract: small signal high frequency bipolar transistor matrix is derived for a relative simple equivalent transistor circuit (see figure 1). The intrinsic , ®0 Cb V2 Figure 1: Small signal equivalent transistor circuit for deriving the common emitter , the current gain ¡3 is due to high injection in the base. With decreasing transistor dimensions the , already to determine the cut off frequency fT of the bipolar transistor. From the same measurements we can , can be extracted. Experimental results of an NPN transistor in the QUBiC3 process [4] are shown and
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gummel small signal high frequency bipolar transistor IC sequential DATA BASE Y parameters of transistors in high frequency transistor RBV 60Ghz ED-31 2048/J

smd transistor h2a

Abstract: H2A SMD transistor Fairchild: MMBT3906 or equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2-4.000MHZ-D or Citizen , -323 Q1 1 3906 Fairchild: MMBT3906 or equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2 , equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2-4.000MHZ-D or Citizen: CS20-4.000MABJ-UT or , protrusions shall not exceed .010â' (0.254mm) per side. JEDEC Equivalent: MS-013 Drawing No. C04 , Value Unit C1 5 0.1 uF Panasonic: ECJ-1VB1E104K or equivalent CAP .1UF 25V CERAMIC
Microchip Technology
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smd transistor h2a H2A SMD transistor SMD Transistor Y8 transistor smd H2A H2A transistor SMD HSA2-040SAA/A2320ATR VER20 RS-232 RC0603JR-075K6L 1/10W RC0603JR-07150KL LTST-C190GKT

D913

Abstract: UNELCO MICA CAPACITORS . EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal , VK200/4B Ferrite Choke or Equivalent, 3.0 (iH L2 - Ferrite Bead(s), 2.0 (iH R1, R2 - 51 0/1.0 W Carbon , . Figure 7. Series Equivalent Impedance RFC2 RF OUTPUT C1, C2, C8 - Arco 463 or equivalent C3 - , Unelco J101 C9 - Arco 262 or equivalent C10 - 0.05 nF Ceramic C11 - 15 (iF, 60 WV Electrolytic D1
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D913 UNELCO MICA CAPACITORS VK200 MRF150 RF150

TH 2267

Abstract: equivalent transistor . EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor , Products Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted , Frequency versus Drain Current MRF154 2-264 MOTOROLA RF DEVICE DATA Figure 8. Series Equivalent , Electrolytic C6, C7 - 0.1 fiF Ceramic, (ATC 200/823 or Equivalent) D1 - 28 V Zener, 1N5362 or Equivalent D 3
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TH 2267 broadband transformers

arco capacitors 262

Abstract: MRF140 equivalent gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 , Equivalent, 3.0 L2 - Ferrite Bead(s), 2.0 nH 01, R2 - 51 £2/1.0 W Carbon R3 - 1.0 £2/1.0 W Carbon or , output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC1 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 nF, Ceramic C5 -
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arco capacitors 262 MRF140 equivalent MRF140

MRF150

Abstract: UNELCO MICA CAPACITORS external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , /100 V Electrolytic L1 - VK200/4B Ferrite Choke or Equivalent, 3.0 (iH L2 - Ferrite Bead(s), 2.0 uH , . Figure 7. Series Equivalent Impedance RFC2 < +50 Vdc BIAS 0-12 V > W V - » t RF OUTPUT rA -4- -4^ RF INPUT C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 nF
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MOTOROLA circuit for mrf150 mrf150 equivalent

MOTOROLA circuit for mrf150

Abstract: UNELCO MICA CAPACITORS gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 , Leads C10 - 10 nF/100 V Electrolytic L1 - VK200/4B Ferrite Choke or Equivalent, 3.0 uH L2 - , MRF150 4.2-127 NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 < + 5 0 Vdc BIAS 0 -12 V > w v RF OUTPUT RF INPUT C1, C2, C8 - Arco 463 or equivalent
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motorola MRF150 BH Rf transistor Unelco J101 2-12S
Abstract: drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur , Chip or Equivalent C7 - 10 |iF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 jiH ) L2 - Ferrite Bead(s), 2.0 nH R1, R2 - 200 Q, 1/2 W Carbon R3 - 4.7 -
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MRF148
Abstract: drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR , M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency , . Figure 7. Series Equivalent Impedance RFC1 C 1 , C2. C 8 - A rco 463 or equivalent C 3 - 25 pF , nelco J101 C9 - A rco 262 or equivalent C 10 - 0.05 ^F, C e ram ic C11 - 15 jiF, 35 W V E lectrolytic -
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MRF138

Abstract: MCM 2128 gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF138 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed fo r power am plifier applications in industrial , te Shunted By 100 n Figure 9. Large-Signal Series Equivalent Input/Output Impedance, Zjnt , Z q l , the small signal unity current gain frequency at a given drain current level. This is equivalent to f
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MCM 2128 Variable Capacitors Arco

mrf138

Abstract: ARC-2 M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , nF Ceramic Chip or Equivalent C7 - 10 |.iF, 100 V Electrolytic C8 - 10 pF Dipped Mica C9 - 68 pF , versus Drain Current Figure 8. DC Safe Operating Area Figure 9. Larg e-S ig nal Series Equivalent , frequency at a given drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector .
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ARC-2

D1115

Abstract: Arco 262 capacitor gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Equivalent, 3.0 jiH L2 - Ferrite Bead(s), 2.0 jiH R1, R2 - 51 n/1.0 W Carbon R3 - 1.0 iJ/1.0 W Carbon or , . Series Equivalent Impedance R FC 1 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - , - Arco 262 or equivalent C10 - 0.05 |iF, Ceramic C11 - 15 fiF, 35 WV Electrolytic L1 - 3/4 , frequency at a given drain current level. This is equivalent to f j for bipolar transistors. Gate Voltage
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D1115 Arco 262 capacitor

CMD333UBC

Abstract: CMD333UGC 2 Manufacturer & Part # MICROSEMI LX1990ILM ON SEMI MMBT2222LT1 or equivalent Chicago Miniature Lamp CMD333UGC or equivalent Chicago Miniature Lamp CMD383UBC or equivalent Transistor, NPN
Microsemi
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LX1990 CMD383UGC CMD333UBC LX190 1/16W
Abstract: drain current level. This is equivalent to fy for bipolar transistors. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF148 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial , . C 1, C2, C3, C4, C5, C6 - 0.1 nF Ceramic Chip or Equivalent C7 - 10 fiF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 uH) L2 - Ferrite Bead(s), 2.0 -
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mrf154 amplifier

Abstract: MRF154 LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor , ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test C ircu it , SOLUTIONS DEVICE DATA MRF154 4.2-143 Figure 8. Series Equivalent Impedance C1 - 1000 pF Ceramic , Ceramic, (ATC 200/823 or Equivalent) D1 - 28 V Zener, 1N5362 or Equivalent D3 - 1N4148 IC1 - MC1723 L1
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mrf154 amplifier Mrf154 M

175mhz

Abstract: , an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , Chip or Equivalent C7 - 10 jiF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 nH) L2 - Ferrite Bead(s), 2.0 |iH R1, R2 - 200 Q, 1/2 W Carbon R3 - 4.7 Q , represents the small signal unity current gain frequency at a given drain current level. This is equivalent
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175mhz MRFT48

0.1 mF ceramic disc capacitor

Abstract: Fair-Rite ATC comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C o lle ctor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field Effect Transistor , : 2 Each, Fair-Rite Products Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent , Note: To determine Z o l*. use formula - 2~P^- = ^ OL* Figure 10. Sériés Equivalent , , Mounted Under T2 01 - 1N5357A or Equivalent 02, D3 - 1N4148 or Equivalent. IC1 - MC1723 (723) Voltage
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MRF157 0.1 mF ceramic disc capacitor Fair-Rite ATC keystone carbon
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