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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HS0-6254RH-Q Intersil Corporation 5 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, DIE-16 visit Intersil

equivalent transistor

Catalog Datasheet MFG & Type PDF Document Tags

ERI - 35 - 2 YE 0515

Abstract: transistor 2SC2458 ] Quick Selector Guide 3. Quick Selector by Package Internal Equivalent Transistor : 2SA1832 M a , Internal Equivalent Transistor : 2SC4116 VCE (sat) max. fT TYP. Vc e Cob TYP. VCB M arking ÏC (V , Equivalent Transistor : 2SA1586 V C E (sat) MAX. !C (V) - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 .3 - 0 , .1 -0 .1 -0 .1 - Internal Equivalent Transistor : 2SA1873 V c E (s a t) MAX. ic (V) - 0 .3 - 0 , Internal Equivalent Transistor : HN1C01FU v C E (sat) MAX. ic (V) 0.3 0-3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3
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ERI - 35 - 2 YE 0515 transistor 2SC2458 2SC3326 MQ SC-62 2SA1314 diode marking YF 80MIN 120-4O RN1001 RN2001 RN1002 RN2002

FeRAM

Abstract: PTSC0007 Flexibility MPG - PTSC0007 - 009 - 3 ® Floating Gate Transistor Equivalent transistor Id Floating gate transistor Neutral Vcg Gate coupling ratio g = Cpp / Ctot Vfg = g x Vcg Id , oxide field ® Double Poly EEPROM Cell Double Poly ­ Two transistor cell Programming and Erasing , limitation will come soon due to high voltage transistor cell Multi-value cell capability Short programming time (~10ms) But Cell transistor must withstand high voltages Very high programming current
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FeRAM BUT 11 Transistor stmicroelectronics eeprom world transistor equivalent and data equivalent transistor

Marcon capacitor Co

Abstract: CACFM ^F), Marcon Electric Co., Ltd. or equivalent. Transistor: 2SC3279, Toshiba Corp. or equivalent. 6 , : CACFM1A220M (22 ¿/F), Marcon Electric Co., Ltd. or equivalent. Transistor: 2SC3279, Toshiba Corp. or , . Transistor: 2SC3279, Toshiba Corp. or equivalent. 7 STEP-UP SWITCHING REGULATORS S-8435/8436 Series_ 11 , . Transistor: 2SC3279, Toshiba Corp. or equivalent. 12. S-8436FF-YK-X (Unless otherwise specified : Ta = 25 , ), Marcon Electric Co., Ltd. or equivalent. Transistor: 2SC3279, Toshiba Corp. or equivalent. 8 STEP-UP
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2SK1112 Marcon capacitor Co CACFM D1N54 2SC3279 equivalent CACFM 1A220M S-8435 RCH654 RCH855 47//H

gummel

Abstract: small signal high frequency bipolar transistor matrix is derived for a relative simple equivalent transistor circuit (see figure 1). The intrinsic , ®0 Cb V2 Figure 1: Small signal equivalent transistor circuit for deriving the common emitter , the current gain ¡3 is due to high injection in the base. With decreasing transistor dimensions the , already to determine the cut off frequency fT of the bipolar transistor. From the same measurements we can , can be extracted. Experimental results of an NPN transistor in the QUBiC3 process [4] are shown and
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gummel small signal high frequency bipolar transistor IC sequential DATA BASE Y parameters of transistors in high frequency transistor RBV 60Ghz ED-31 2048/J

smd transistor h2a

Abstract: H2A SMD transistor Fairchild: MMBT3906 or equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2-4.000MHZ-D or Citizen , -323 Q1 1 3906 Fairchild: MMBT3906 or equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2 , equivalent TRANSISTOR GP PNP AMP SOT-23 Abracon: ABC2-4.000MHZ-D or Citizen: CS20-4.000MABJ-UT or , protrusions shall not exceed .010â' (0.254mm) per side. JEDEC Equivalent: MS-013 Drawing No. C04 , Value Unit C1 5 0.1 uF Panasonic: ECJ-1VB1E104K or equivalent CAP .1UF 25V CERAMIC
Microchip Technology
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smd transistor h2a H2A SMD transistor SMD Transistor Y8 transistor smd H2A TSHARC A2 HSA2-040SAA/A2320A VER20 RS-232 RC0603JR-075K6L 1/10W RC0603JR-07150KL LTST-C190GKT

D913

Abstract: UNELCO MICA CAPACITORS . EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , -E ffect Transistor N-Channel Enhancement-Mode . . . designed primarily for linear large-signal , VK200/4B Ferrite Choke or Equivalent, 3.0 (iH L2 - Ferrite Bead(s), 2.0 (iH R1, R2 - 51 0/1.0 W Carbon , . Figure 7. Series Equivalent Impedance RFC2 RF OUTPUT C1, C2, C8 - Arco 463 or equivalent C3 - , Unelco J101 C9 - Arco 262 or equivalent C10 - 0.05 nF Ceramic C11 - 15 (iF, 60 WV Electrolytic D1
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D913 UNELCO MICA CAPACITORS VK200 MRF150 RF150

arco capacitors 262

Abstract: MRF140 equivalent gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 , Equivalent, 3.0 L2 - Ferrite Bead(s), 2.0 nH 01, R2 - 51 £2/1.0 W Carbon R3 - 1.0 £2/1.0 W Carbon or , output power, voltage and frequency. NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC1 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 nF, Ceramic C5 -
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arco capacitors 262 MRF140 equivalent MRF140

TH 2267

Abstract: equivalent transistor . EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor , Products Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent unless otherwise noted , Frequency versus Drain Current MRF154 2-264 MOTOROLA RF DEVICE DATA Figure 8. Series Equivalent , Electrolytic C6, C7 - 0.1 fiF Ceramic, (ATC 200/823 or Equivalent) D1 - 28 V Zener, 1N5362 or Equivalent D 3
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TH 2267 broadband transformers

MRF150

Abstract: MOTOROLA circuit for mrf150 external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , /100 V Electrolytic L1 - VK200/4B Ferrite Choke or Equivalent, 3.0 (iH L2 - Ferrite Bead(s), 2.0 uH , . Figure 7. Series Equivalent Impedance RFC2 < +50 Vdc BIAS 0-12 V > W V - » t RF OUTPUT rA -4- -4^ RF INPUT C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - 0.1 nF
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MOTOROLA circuit for mrf150 mrf150 equivalent

MOTOROLA circuit for mrf150

Abstract: UNELCO MICA CAPACITORS gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 , Leads C10 - 10 nF/100 V Electrolytic L1 - VK200/4B Ferrite Choke or Equivalent, 3.0 uH L2 - , MRF150 4.2-127 NOTE: Gate Shunted by 25 Ohms. Figure 7. Series Equivalent Impedance RFC2 < + 5 0 Vdc BIAS 0 -12 V > w v RF OUTPUT RF INPUT C1, C2, C8 - Arco 463 or equivalent
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motorola MRF150 BH Rf transistor Unelco J101 2-12S
Abstract: drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur , Chip or Equivalent C7 - 10 |iF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 jiH ) L2 - Ferrite Bead(s), 2.0 nH R1, R2 - 200 Q, 1/2 W Carbon R3 - 4.7 -
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MRF148
Abstract: drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR , M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode Designed primarily for linear large-signal output stages up to 150 MHz frequency , . Figure 7. Series Equivalent Impedance RFC1 C 1 , C2. C 8 - A rco 463 or equivalent C 3 - 25 pF , nelco J101 C9 - A rco 262 or equivalent C 10 - 0.05 ^F, C e ram ic C11 - 15 jiF, 35 W V E lectrolytic -
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MRF138

Abstract: MCM 2128 gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF138 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed fo r power am plifier applications in industrial , te Shunted By 100 n Figure 9. Large-Signal Series Equivalent Input/Output Impedance, Zjnt , Z q l , the small signal unity current gain frequency at a given drain current level. This is equivalent to f
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MCM 2128 Variable Capacitors Arco

mrf138

Abstract: ARC-2 M OTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor , nF Ceramic Chip or Equivalent C7 - 10 |.iF, 100 V Electrolytic C8 - 10 pF Dipped Mica C9 - 68 pF , versus Drain Current Figure 8. DC Safe Operating Area Figure 9. Larg e-S ig nal Series Equivalent , frequency at a given drain current level. This is equivalent to f j for bipolar transistors. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY Collector .
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ARC-2

D1115

Abstract: Arco 262 capacitor gate-to-source. If gate protection is required, an external zener diode is recommended. EQUIVALENT TRANSISTOR , Equivalent, 3.0 jiH L2 - Ferrite Bead(s), 2.0 jiH R1, R2 - 51 n/1.0 W Carbon R3 - 1.0 iJ/1.0 W Carbon or , . Series Equivalent Impedance R FC 1 C1, C2, C8 - Arco 463 or equivalent C3 - 25 pF, Unelco C4 - , - Arco 262 or equivalent C10 - 0.05 |iF, Ceramic C11 - 15 fiF, 35 WV Electrolytic L1 - 3/4 , frequency at a given drain current level. This is equivalent to f j for bipolar transistors. Gate Voltage
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D1115 Arco 262 capacitor

CMD333UBC

Abstract: CMD333UGC 2 Manufacturer & Part # MICROSEMI LX1990ILM ON SEMI MMBT2222LT1 or equivalent Chicago Miniature Lamp CMD333UGC or equivalent Chicago Miniature Lamp CMD383UBC or equivalent Transistor, NPN
Microsemi
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LX1990 CMD383UGC CMD333UBC LX190 1/16W
Abstract: drain current level. This is equivalent to fy for bipolar transistors. EQUIVALENT TRANSISTOR , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF148 RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for power amplifier applications in industrial , . C 1, C2, C3, C4, C5, C6 - 0.1 nF Ceramic Chip or Equivalent C7 - 10 fiF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 uH) L2 - Ferrite Bead(s), 2.0 -
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mrf154 amplifier

Abstract: MRF154 LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistor , ATC type 100/200 chips or equivalent unless otherwise noted. Figure 1. 30 MHz Test C ircu it , SOLUTIONS DEVICE DATA MRF154 4.2-143 Figure 8. Series Equivalent Impedance C1 - 1000 pF Ceramic , Ceramic, (ATC 200/823 or Equivalent) D1 - 28 V Zener, 1N5362 or Equivalent D3 - 1N4148 IC1 - MC1723 L1
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mrf154 amplifier Mrf154 M

175mhz

Abstract: , an external zener diode is recommended. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C ollector , Chip or Equivalent C7 - 10 jiF, 100 V Electrolytic C8 - 100 pF Dipped Mica L1 - VK200 20/4B Ferrite Choke or Equivalent (3.0 nH) L2 - Ferrite Bead(s), 2.0 |iH R1, R2 - 200 Q, 1/2 W Carbon R3 - 4.7 Q , represents the small signal unity current gain frequency at a given drain current level. This is equivalent
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175mhz MRFT48

0.1 mF ceramic disc capacitor

Abstract: Fair-Rite ATC comparable LC matching networks. EQUIVALENT TRANSISTOR PARAMETER TERMINOLOGY C o lle ctor , MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Power MOS Line Pow er Field Effect Transistor , : 2 Each, Fair-Rite Products Corp. #2667540001 All capacitors ATC type 100/200 chips or equivalent , Note: To determine Z o l*. use formula - 2~P^- = ^ OL* Figure 10. Sériés Equivalent , , Mounted Under T2 01 - 1N5357A or Equivalent 02, D3 - 1N4148 or Equivalent. IC1 - MC1723 (723) Voltage
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MRF157 0.1 mF ceramic disc capacitor Fair-Rite ATC keystone carbon
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