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LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

equivalent transistor tip31c

Catalog Datasheet MFG & Type PDF Document Tags

tip318

Abstract: tip318 transistor . REV 1 Motorola Bipolar Power Transistor Device Data 3-873 TIP31A TIP31B TIP31C TIP32A TIP32B , Transistor Device Data TIP31A TIP31B TIP31C TIP32A TIP32B TIP32C Q Ç ' 0.01 0.02 0.05 , (sus) = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C , 3.0 5.0 1.0 40 0.32 TIP31C TIP32C 100 100 Unit Vdc Vdo Vdc Ade Ade Watts W/-C Watts W/" C mj °C , Collector-Emitter Sustaining Voltage (1) (Iq - 30 mAdc, lB - 0) VCEO(sus) TIP31A, TIP32A TIP31B, TIP32B TIP31C
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tip318 tip318 transistor tip31C-tip32C equivalent transistor tip31c transistor tip 32C data tip318 TIP318

tip318

Abstract: tip318 transistor © Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 3­1 REV 1 Preferred , Rating Symbol TIP31A TIP32A TIP318 TIP32B TIP31C TIP32C Unit *MAXIMUM RATINGS · , (sus) = 100 Vdc (Min) - TIP31C, TIP32C · High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ , * PNP TIP31A TIP31B* TIP31C* . . . designed for use in general purpose amplifier and switching , Order this document by TIP31A/D MOTOROLA 3­2 Figure 2. Switching Time Equivalent Circuit RB
Motorola
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TIP32CR tip31c motorola TIP32A MOTOROLA MOTOROLA TIP31A

Texas Instruments TIP31C

Abstract: c2688 , TIP31C, TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS DECEMBER 1970 - REVISED OCTOBER 1984 , temperature (unless otherwise noted) TIP31 TIP31A TIP31B TIP31C Collector-base voltage 80 V 100V 120 V 140V , is based on the capability of the transistor to operate safely in the circuit in Figure 2. « , |flTtil75b DG3t7bl 5 ôôêÏ726^TEXÃ'S INSTR iUKTO) TIP31, TÃP31A, TIP31B, TIP31C, TIP31D, TIP31E , /°C. 4. This rating is based on the capability of the transistor to operate safety in the circuit in
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Texas Instruments TIP31C c2688 texas instruments tip31a tRANSISTOR c2688 Texas Instruments TIP31 TIP31c Texas Instruments 1500C 3S766 T--33-II

TIP31 NPN Transistor diagram

Abstract: TIP31 NPN Transistor TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary , Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C ·High Current Gain - Bandwidth Product , Unit Collector - Emitter Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C , TIP31C, TIP32C Emitter-Base Voltage Collector Current Continuous Peak Unclamped Inductive Load , , TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Î Î Î Î Î Î
ON Semiconductor
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TIP31 NPN Transistor diagram TIP31 NPN Transistor TIP32 PNP Transistor 10 amp npn power transistors TIP31CG TIP31 PNP Transistor

TIP32C

Abstract: tip318 Equivalent Circuit Figure 3. Turn­On Time http://onsemi.com 3 TIP31A TIP31B MJF31C TIP31C TIP32A , general purpose amplifier and switching applications. TIP31A TIP31B * MJF31C* TIP31C TIP32A * TIP32B , ) = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C , *MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC IB TIP31A TIP32A 60 60 TIP318 TIP32B 80 80 TIP31C TIP32C , Collector­Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) VCEO(sus) TIP31A, TIP32A TIP31B, TIP32B TIP31C
ON Semiconductor
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TIP32C equivalent tip32A application circuit MJF32C

tip318 transistor

Abstract: tip318 TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C High Current Gain - Bandwidth Product f j = 3.0 MHz (Min) @ Iq = 500 mAdc Compact T O -220 AB Package NPN TIP31B* TIP31C* PNP TIP32A TIP32B* TIP32C , TIP31A TIP32A 60 60 TIP318 TIP32B 80 80 5.0 3.0 5.0 1.0 TIP31C TIP32C 100 100 Unit Vdc Vdc , Sustaining Voltage (1) (I q = 30 mAdc, Ib = 0) v CEO(sus) TIP31 A, TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31 A, TIP32A TIP31B, TIP31C TIP32B, TIP32C TIP31 A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Iq Symbol
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tip32co TIP31 EQUIVALENT

TIP32 NPN Transistor

Abstract: TIP32 equivalent .0 TIP31, TIP32 High Power Bipolar Transistor Maximum Ratings Symbol TIP31A TIP32A TIP31C TIP32C , Bipolar Transistor Figure - 3 Turn-On Time Figure - 2 Switching Time Equivalent Circuit Figure - 5 , TIP31, TIP32 High Power Bipolar Transistor Features: · Collector-Emitter sustaining voltage VCEO(sus) = 60V (Minimum) - TIP31A, TIP32A = 100V (Minimum) - TIP31C, TIP32C. · Collector-Emitter , Transistor Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol
Multicomp
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TIP32 NPN Transistor TIP32 equivalent 1462, TRANSISTOR TIP31c PNP Transistor transistor 7333 TRANSISTOR TIP31

TIP31 NPN Transistor diagram

Abstract: TIP31C TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon , 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C , Collector - Emitter Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCEO 40 60 , , TIP32B TIP31C, TIP32C Emitter-Base Voltage Collector Current Continuous Peak Operating and , September, 2005 - Rev. 10 1 Publication Order Number: TIP31A/D TIP31, TIP31A, TIP31B, TIP31C
ON Semiconductor
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TIP31AG TIP32 applications TIP32CG

TIP31 NPN Transistor diagram

Abstract: darlington tip31 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon , Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C High Current Gain - Bandwidth Product fT = , TIP31C, TIP32C TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Continuous Peak Symbol VCEO , 1 Publication Order Number: TIP31A/D TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A , Sustaining Voltage (Note 2) (IC = 30 mAdc, IB = 0) TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C
ON Semiconductor
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darlington tip31 transistors TIP32 6 pin to-220 power switching ic TIP31C EQUIVALENT TIP32AG TIP31BG

tip318

Abstract: tip318 transistor TIP31A, TIP31B, TIP31C, (NPN), TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power , TIP31C, TIP32C · High Current Gain ­ Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc 3 AMPERE , ÎÎÎÎÎÎÎÎ ÎÎÎ MAXIMUM RATINGS Rating Symbol VCEO VCB VEB IC TIP31A TIP32A 60 60 TIP318 TIP32B 80 80 TIP31C , 3.125 TIP31A, TIP31B, TIP31C, (NPN), TIP32A, TIP32B, TIP32C, (PNP) ELECTRICAL CHARACTERISTICS (TC , , TIP32A TIP31B, TIP32B TIP31C, TIP32C TIP31A, TIP32A TIP31B, TIP31C TIP32B, TIP32C 60 80 100 ­ ­ ­ ­ ­
ON Semiconductor
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TIP31A On Semiconductor

TIP31 NPN Transistor diagram

Abstract: TIP32 Application Note TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon , ) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C High Current Gain , , TIP32B TIP31C, TIP32C Collector-Base Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C , 62.5 _C/W _C/W RqJC 3.125 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP , , TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCEO(sus) 40 60 80 100 - - - - - - - - - - -
ON Semiconductor
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TIP32 Application Note transistor marking MH

TIP318

Abstract: marking CJD TIP31A, TIP31B, TIP31C, (NPN), TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power , TIP31C, TIP32C · High Current Gain ­ Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc MARKING , Total Power Dissipation @ TA = 25_C Derate above 25_C Unit IC Base Current TIP31C TIP32C , TIP31B, TIP31C TIP32B, TIP32C Collector Cutoff Current (VCE = 60 Vdc, VEB = 0) (VCE = 80 Vdc, VEB = 0) (VCE = 100 Vdc, VEB = 0) TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C ICES ICEO
ON Semiconductor
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marking CJD

TIP31 NPN Transistor diagram

Abstract: TIP32A TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon , Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C · High Current Gain - Bandwidth , TIP31B, TIP32B TIP31C, TIP32C VCEO 40 60 80 100 Vdc VCB 40 60 80 100 Vdc VEB , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector-Base Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C , , TIP32B TIP31C, TIP32C ICES Collector Cutoff Current (VCE = 30 Vdc, IB = 0) TIP31, TIP32, TIP31A
ON Semiconductor
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TIP31 NPN Transistor diagram

Abstract: TIP31CG TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary , = 60 Vdc (Min) - TIP31A, TIP32A = 80 Vdc (Min) - TIP31B, TIP32B = 100 Vdc (Min) - TIP31C, TIP32C , Rating 1 Symbol Value Unit TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCEO 40 60 80 100 Vdc TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C VCB , , 2008 - Rev. 12 1 Publication Order Number: TIP31A/D TIP31, TIP31A, TIP31B, TIP31C, (NPN
ON Semiconductor
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equivalent to220

tip318

Abstract: tip318 transistor TIP31A, TIP31B*, TIP31C, (NPN), TIP32A*, TIP32B*, TIP32C, (PNP) *Preferred Devices , = 100 Vdc (Min) ­ TIP31C, TIP32C · High Current Gain ­ Bandwidth Product MARKING DIAGRAMS , ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Symbol TIP31A TIP32A TIP318 TIP32B TIP31C TIP32C Unit , TIP31B, TIP32B TIP31C, TIP32C ICES TIP31A, TIP32A TIP31B, TIP31C TIP32B, TIP32C Collector , , TIP32A TIP31B, TIP32B TIP31C, TIP32C Collector­Emitter Sustaining Voltage (Note 2) (IC = 30 mAdc
ON Semiconductor
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tip31c application

TIP31AG

Abstract: TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary , 100 Vdc (Min) â' TIP31C, TIP32C High Current Gain â' Bandwidth Product fT = 3.0 MHz (Min) @ IC = , TIP31B, TIP32B TIP31C, TIP32C VCEO 40 60 80 100 VCB 40 60 80 100 Vdc VEB 5.0 , COLLECTOR EMITTER COLLECTOR Vdc TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C 2 , September, 2011 â' Rev. 13 1 Publication Order Number: TIP31A/D TIP31, TIP31A, TIP31B, TIP31C
ON Semiconductor
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220AB

transistor tip 31c

Abstract: TIP 29 transistor TYPES TIP31. TIP31A. TIP31B. TIP31C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR , TIP31B TIP31C Collector-Base V 60 V 80 V 100 V , /° C. 5. This rating is based on the capability of the transistor to operate safely in the circuit , Instruments 2-177 TYPES TIP31, TIP31A, TIP31B, TIP31C N-P-N SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS electrical characteristics at 25° C case temperature PARAMETER TEST CONDITIONS TIP31 TIP31A TIP31B TIP31C
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transistor tip 31c TIP 29 transistor TIP 31 Transistor tip 31 TIP 31 EQUIVALENT transistor DA 2688

tip 31c

Abstract: til 31a TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M ESA SILICON POWER TRANSISTORS 3JCDH , C ollector C urrent 40 40 V V TIP31A 60 V 60 V TIP31B 80 V 80 V TIP31C 100 V 100 V ^ , based on th e c a p a b ility o f th e transistor to o perate safely in th e c irc u it o f Figure 2 . L , A S . T E X A S 7S 22 2 5.327 " TYPES TIP31, TIP31A, TIP31B. TIP31C N-P-N SINGLE-DIFFUSED M , values show n are n om inal; exact values vary slightly w ith transistor param eters. 1 270 5.328
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tip 31c til 31a texas instruments tip32

tip 31

Abstract: c2688 L 5V 3A 5A 1A See Figure 4 40 W 2W 32 mJ -6 5°C to 150°C 2 5 0 °C TIP31B 1 20 V 80 V TIP31C 140 V 1 00 , /°C. This rating is based on the capability of the transistor to operate safely In the circuit in , This rating is based on the capability of the transistor to operate safely in the circuit in Figure 2 , 0.3 0.3 TIP31B MIN TYP MAX 80 100 TIP31C . MIN TYP MAX UNIT V rrtA v CE = 80 V , Ic e s Vc e = , , TIP31C, TIP31D, TIP31E, TIP31F N-P-N SILICON POWER TRANSISTORS D electrical characteristics at 2 5
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c2688 L tip 120 TRANSISTOR equivalent DA 2688 T1P31D T0-22DAB C-2688

MJ-12003

Abstract: BU108 3­874 Figure 3. Turn­On Time Motorola Bipolar Power Transistor Device Data TIP31A TIP31B TIP31C , ) - TIP31C, TIP32C · High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc · Compact TO­220 AB Package *MAXIMUM RATINGS Rating TIP31A TIP31B* TIP31C* TIP32A TIP32B* TIP32C , TIP32A 60 60 TIP318 TIP32B 80 80 TIP31C TIP32C 100 100 Unit Vdc Vdc Vdc Adc Adc Collector­Emitter Voltage , overall value. REV 1 Motorola Bipolar Power Transistor Device Data 3­873
Motorola
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MJ-12003 BU108 2N6285 equivalent TIP32C 329 BD679 BDT64B MJ15012 MJE15030 2N6339 2N6341 2N6497 MJ15011
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