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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR visit Texas Instruments
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN visit Intersil

equivalent transistor bc 172 b

Catalog Datasheet MFG & Type PDF Document Tags

HALL EFFECT 21E

Abstract: thyristor aeg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Transistor Equivalent Circuit . . . , chosen as the reference point. 94 9315 B Example: NPN transistor in common-emitter, commonbase , TELEFUNKEN Semiconductors Transistor Equivalent Circuit Transistor characteristics can be explained with , Y (g ­Y ) ) Y ) Y be bc bc m bc bb bc Cb'c Ib b Ibb' gb'e b , Capacitances C 22e The transistor equivalent circuit (see chapter `Transistor Equivalent Circuit') shows
Temic Semiconductors
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Pnp transistor smd ba rn

Abstract: transistor marking code 12W SOT-23 equivalent, slight electrical differences. B* SM Exact electrical and mechanical. Exact electrical equivalent , BC817 B C 817.16 B C 817.25 B C 817.40 BC818 B C 818.16 B C 818.25 BC 818.40 BC846 BC846A BC846B BC847 , BC860B BC 860C BC868 BC869 * Special O rde r CE SE (Continued) Industry Part N u m b er B C F29 B C , BCV47 BC V48 BC V49 BCV71 BCV72 B C W 29 B C W 30 BCW 31 B C W 32 B C W 33 B C W 60 BC W 60A BC W 60B B C W 60C B C W 60D BCW61 BC W 61A BC W 61B B C W 61C B C W 61D BC W 65 BC W 65A BC W 65B B C W 65C B
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Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru Q9001-1994 CMSH1-20ML CMSH2-20L CMSH3-20L CSHD5-25L CSHD10-45L

schematic diagram dc-ac inverter sg3525

Abstract: sg3525 application note . 30 Appendix B Product technical specification . . . . . . . . . . . . . . . . . . . . . . . . . . , windings by the conduction of a transistor, the reflected voltage across the other primary winding puts the drain of the off state transistor at twice the input voltage with respect to ground. This is the , by an internal P-channel DMOS transistor and few external components. In this way, it is possible to , equivalent flat topped input current: Equation 7 Ipft = Iin 55.55 = = 61.72 A 2Dmax 0.9
STMicroelectronics
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AN2794 schematic diagram dc-ac inverter sg3525 sg3525 application note DC-AC inverter sg3525 schematic diagram battery charger sg3525 sg3525 STP160N75F3

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres 100_295 *BCT07A TO-18 300 45 125-260 2 0,95 100/5 300 §_297 *BC 107 B TO-18 300 45 240-500 2 0,95 100/5 , page *BC 108 A TO-18 300 20 125-260 2 0,95 100/5 300 S 297 *BC 108 B TO-18 300 20 240-500 2 0,95 100/5 300 § 297 *BC 108 C TO-18 300 20 450-900 2 0,95 100/5 300 § 297 BC 109 B TO-18 300 20 240-500 2 0 , 1000/100 50 307 *BC 182 F 139 B 300 50 100-480 2 0,6 100/5 280 § 327 BC 183 F 139 B 300 30 100-850 2 0,6 100/5 280 § 327 BC 184 F 139 B 300 30 250- 2 0,6 100/5 280 s 327 BC
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catalogue des transistors bipolaires de puissance brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 3154-S

GU47

Abstract: tba 940 COPPER AREA 3i> Fig. 1(3-Example of TCA940E with external heatsink rtATSINK B,h,B-C/W 468 TCA 040 E , plastic package, intended for use as a low frequency class B amplifier. The TCA 940E provides 6.5W output , safe operating area of the power transistors. The TCA 940E is pin to pin equivalent to the TBA 810S , Dimensions in mm â  - - 11.78. .j JIclE. Ìl. I II n g liFTJ O1 £08 ' _ÌÃ'Ì6~ 17.2 , Voltage for input saturation 250 mV V, Input sensitivity PD = 5.4W Vs = 18V Rl=8îî f =1 kHz 110 mV B
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GU47 tba 940 G1241 G1242 GH68 equivalent transistor bc 172 b 940EE

TIS43

Abstract: BF257 Texas . 192 8C 325 BC 326 BC 3 B 2 .202 BC 383 BC 384 . , between an e m itte r and a c o lle c to r o f a base (B, b) transistor and in to w h ic h m in o , The Transistor and Diode Data Book for Design Engineers (Volume II) Northern European , . T IL has made every e ffo rt to ensure th e accuracy o f this Oata Bo ok, b u t cannot accept lia b , Texas Instrum ents Lim ited THE TRANSISTOR AN D DIO DE D A T A BOOK VO LUME II Since 1954 when
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TIS43 BF257 Texas equivalent of transistor bc214 BF195 equivalent is920 equivalent BF178 BS9300-C-738 BS9300-C-669 CV7671 BS9300-C-671 BS9300-C-670 V7672

uhf amplifier design

Abstract: 2N6136 100-B-10-M-MS or equivalent L1, L2, L3 ­ 5 turns #20 Closewound 3/16" I.D. L4, L5, L6 ­ 0.15 µh molded choke L7, L8 ­ Ferroxcube VK 200 20/4B or equivalent Ferrite beads are Ferroxcube 56 590 65/3B or equivalent Figure 1. Schematic Diagram of 25 W UHF Amplifier REV 0 MOTOROLA SEMICONDUCTOR , copper foil through the transistor mounting hole as shown in Figure 6. BCP = (BC ­ BD) (Yo) = (2.4 ­ , width as the transistor leads (0.225 inch) produces a reasonable characteristic impedance (Zo) of
Motorola
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AN548A uhf amplifier design 2N6136 2N5945 Motorola ARCO 465 Compression Trimmer Capacitor j411 Motorola motorola an-282a application AN548A/D

APC UPS CIRCUIT DIAGRAM rs 1500

Abstract: APC UPS es 500 CIRCUIT DIAGRAM complementary PNP types are respectively the BC 177, B C178 and BC179. ABSOLUTE MAXIMUM RATINGS VcBO VCEO , 40V T am b = 150 °C for BC 108 - BC 109 VCb = 20 V VCb = 20 V T am b = 150 °C 15 nA 15 (j,A 15 nA 15 [J.A V ( b r )c b o Collector-base breakdown voltage dE = 0) lc = 10 p.A for BC 107 for , 1 0 mA for BC 107 for BC 108 for BC 109 45 20 20 V V V V (br ie b o Emitter-base breakdown , BC 107 for BC 107 Gr. for BC 107 Gr. for BC 108 for BC 108 Gr. for BC 108 Gr. for B C 108 Gr. for BC
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APC UPS CIRCUIT DIAGRAM rs 1500 APC UPS es 500 CIRCUIT DIAGRAM APC UPS 650 CIRCUIT DIAGRAM schematic diagram APC back ups XS 1000 TAA550 APC UPS CIRCUIT DIAGRAM AF106

2N6136

Abstract: uhf amplifier design Microwave capacitor ATC type 100-B-10-M-MS or equivalent L1, L2, L3 ­ 5 turns #20 Closewound 3/16" I.D. L4, L5, L6 ­ 0.15 µh molded choke L7, L8 ­ Ferroxcube VK 200 20/4B or equivalent Ferrite beads are Ferroxcube 56 590 65/3B or equivalent Figure 1. Schematic Diagram of 25 W UHF Amplifier RF Application , transistor leads (0.225 inch) produces a reasonable characteristic impedance (Zo) of 40.65 ohms. The value , described. The complex series equivalent input and output impedances as taken from the data sheets are
Motorola
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AN-282A 2N5946 Transistor 2274 Nippon capacitors AN555 motorola cm 340 a transistor

3866S

Abstract: BF247 equivalent 182 BC 183 BC 184 BC190A, B BC 211 BC 211 A BC 212 BC 213 BC 214 BC 215 B BC 237 BC 238 BC 239 BC 264 , page V o lr p tg t *B C 108 A *B C 108 B *B C 108 C BC 109 B BC 109 C TO-18 TO-18 TO-18 TO-18 TO , cl. 16 TO-39 BC 141 cl .6 TO-39 750 750 750 750 BC 141 c l.10 TO-39 BC 141 c l.16 TO-39 *B C 182 BC 183 BC 184 F 139 B F 139 B F 139 B 300 300 300 50 30 30 100-480 100-850 250- 2 2 2 0,6 0,6 0,6 100/5 100/5 100/5 BC 190 A BC 190 B TO-18 TO-18 300 300 64 64
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3866S BF247 equivalent Triac GK transistor bc 564 TI Small Signal FET Catalogue BC547E SP309

equivalent transistor bc 172 b

Abstract: BA033CC0WFP > Terminal B, while it operates as a parasitic transistor when the electric potential relationship is , terminal. Transistor (NPN) (Pin B) C B Resistor (Pin B) (Pin A) E B GND P+ N N , Number: BADD0 bc Symbol Package bc Symbol Details Output Voltage Designation Output , -3 b c b c Switch:"With W" :Shutdown switch included "Without W":Shutdown switch not included , .26 Input / Output Equivalent Circuit Diagrams < BADD0 Series > < BACC0 Series > Vcc Vcc 10k
ROHM
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BA033CC0WFP BA033CC0WT BA33CC0WT BA33DD0WT BA50DD0WT ROHM 200V 200mA DIODE 11021ECT01 R1120A

BA33CC0WT

Abstract: BA33DD0WT TO220FP-5 HRP5 TO220FP-3 Part NumberBADD0 bc © 2009 ROHM Co., Ltd. All rights reserved. 15 1/9 Symbol a b c bc Details Output Voltage Designation Output Voltage(V , > Terminal B, while it operates as a parasitic transistor when the electric potential relationship is , terminal. Transistor (NPN) B E Reverse current CTL Fig. 36:Bypass diode (Pin B) B N P , NumberBACC0 a Symbol a b c a Details Output Voltage Designation Output Voltage(V
ROHM
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HRP-5 hrp5 to252-3-11 09021EAT01 R0039A

MJ 15007 transistor

Abstract: MJ 15007 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES_ · HIGH DYNAMIC RANGE · , Sll>JK _ O Ï B * I 10 0, 0 NE46134 RTH (J-A) '312.5'C/W 1 WITH INFIN HE 1 ! .HEATSINK , ) 3-46 Collector Current, Ic (mA) Rs = R l = 50 i i Untuned b*4E7525 QQbSbBD 41b NE46100 , 0.99 GHz o O O Q Q Q a: z z C OO JO J f - 2 x 1 9 0 MHz * 2 0 0 MHz " IM 2 : V o « 105 d B n V , -102 -135 -162 -169 -172 -174 -176 -177 -178 -180 177 174 170 167 0.16 0.36 0.75 0.91 1.02 1.08 1.17
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NE41634 MJ 15007 transistor MJ 15007 NE46134 equivalent transistor XM SOT-89 Transistor 33735 NE461 7100D

axial zener diodes marking code c3v6

Abstract: ZENER DIODES CODE ID CHART | /| V CE sat ' c ' B 'c at [mA| TO 18 300 20 BC* RO110 109 2 1 20 , 178 BC 204 BC 205 f Preamp, driver and general use 20 V -V I-A -B 1 ROl 10 Preamp , large number of units manufactured meet CCTU specification (the equivalent of the UK CV Spec.). The , , â'¢ ~ |2m A â'¢ â'¢ â'¢ â'¢ â'¢ I* Ir,M f .1 .1 9 BSX 51 B 2N2480 , TRANSISTORS VC B O (A) TYPE z a. n- z . z a. 30i V, 5 I 2 (V) c T (MHz
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axial zener diodes marking code c3v6 ZENER DIODES CODE ID CHART H 48 zener diode diode zener ph c5v6 diode zener BZX 61 C 10 74151N BR705A BR71A BR72A BR74A BR76A BR78A

TO-252-3

Abstract: 882 to252 -3 Package TO220FP-5 HRP5 TO220FP-3 Part NumberBADD0 bc © 2010 ROHM Co., Ltd. All rights reserved. 15 1/9 Symbol a b c bc Details Output Voltage Designation , > Terminal B, while it operates as a parasitic transistor when the electric potential relationship is , terminal. Transistor (NPN) B E Reverse current CTL Fig. 36:Bypass diode (Pin B) B N P , NumberBACC0 a Symbol a b c a Details Output Voltage Designation Output Voltage(V
ROHM
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TO-252-3 882 to252 TO220FP-5V5 10021EBT01 R1010A

dc cdi schematic diagram

Abstract: DD139 basic cell contains three uncommitted transistor pairs (1.5 equivalent gates) and interconnect paths for ,   From 3,528 to 21,336 equivalent 2-input gates. â  Double level metal used for global and intracell , performance family of HCMOS devices ranging in complexity from 3,528 to 21,336 equivalent 2-input gates , with the active transistor area, significantly reducing wiring capacitance while allowing large transistor sizes for increased performance. This technique allows high component utilization, and yields die
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dc cdi schematic diagram DD139 cdi schematic Newmarket Microsystems Newmarket Transistors cdi schematic diagram CSB8000 D-6050 11-87/P

IGBT tail time

Abstract: igbt simulation breakover voltage is much higher of the p-n-p transistor, than Case B. This is because the which is , . Fig. 6(b) shows the characteristics before proton irradiation (equivalent to Case A of simulation , Terms-Insulated gate bipolar transistor, power semiconductor. A. Comparison Between PT and NPT IGBTs I , that were developed in order to achieve better characteristics than the NPT IGBT. B. Breakover Voltage is equivalent to the The IGBT's breakover voltage under an open base condition and it p-n-p
Powerex
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IGBT tail time igbt simulation NATIONAL IGBT local lifetime mitsubishi igbt cm Semiconductor Group igbt

AO4L

Abstract: AO16A ) D+C*B+A D+C*B+A !(B*A+C*B+C*A) !B*!A+C*B+C*!A B*!A+C*B+C*!A !(B*A+C*B+C*A) B*A+C*B+C*A B*A+C*B+C*A !(A*B+C) !(!A*B+C) !A*B+C C*!A+C*!B 15 MTC-35000 Cell name Functional description , AO8L AO8N AO8NL AO9 AO9L AO9N AO9NL !C*!A+C*!B !(A*B+C) A*B+C A*B+C !(C*B+C*A) !C*B+C*!A C*B+C*!A C+!A*!B !C+!A*!B !(C*B+C*A) C*B+C*A C*B+C*A !(B*A*C+D) !(B*A*C+D) B*A*C+D B*A*C+D , megacells - Maximum gross gate count of 1,000,000 - NAND gate equivalent density (unrouted): 6060 gate
Alcatel
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AO4L AO16A AO15A ld3p FD3S AO23L MTC-350
Abstract: . 390100288201 Rev 003 The device is delivered in a Thin Small Outline Transistor (TSOT) for surface mount , - 17.2 UA Package (TO-92 flat , magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor , specifications Test Conditions Operating B < BRP IOUT = 20mA, B > B OP B < BRP, VOUT = 24V RL = 1k2, CL = , Conditions (UA) OUT (UA) South pole B < BRP High B > BOP Low North pole B > BOP Low B < BRP High Melexis
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US2882 AAA-000 US288 882ESE-AAA-000-RE CDC8EA4F6348233C 53672894EA4E

pin diagram for IC cd 1619 fm receiver

Abstract: ml 1136 triac (amplifier):. 17.2, 17.7ff, 17.29 . A,17.2 Bidirectional (WiFi , :.3.40, 9.20 Class:. 3.30, 5.23, 17.2, 17.7ff, 17.29 Common-emitter/base/collector , ):.3.32 Field-effect transistor , :.3.5 , 17.2 Load line
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pin diagram for IC cd 1619 fm receiver ml 1136 triac Transistor 337 DIODE 2216 yagi-uda Antenna bistable multivibrator using ic 555
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