NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: DOUBLE PLUG CONSTRUCTION SWITCHING DIODE Qualified per MIL-PRF-19500/193 MIL-PRF-19500/193 DEVICES QUALIFIED LEVELS 1N457 JAN MAXIMUM RATING AT 25°C Operating Temperature: Storage Temperature , NOTES: 1. 2. 3. Dimensions are in inches. Millimeters are given for general information only. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Type (DO-35 DO-35) (DO-7) Ltr , dimensions: TYPES: 1N457, 1N458 1N458, and 1N459 1N459 DESIGN DATA Case: Hermetically sealed glass package per ... | Original |
2 pages, |
BD 978 1N459 1N458 1N457 1N457 equivalent equivalent diode for 1n457 datasheet abstract |
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| Abstract: completed by 2 February 2010. PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, RECTIFIER TYPES 1N457, 1N458 1N458, AND 1N459 1N459, JAN Inactive for new design. This specification is approved for , Scope. This specification covers the performance requirements for silicon diode rectifiers. One level of , only. 3. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. TYPES 1N457, 1N458 1N458 , 1N459 1N459 4016 Reverse current 1N457 1N458 1N458 1N459 1N459 4016 See 4.2.2. Not required for end-point ... | Original |
9 pages, |
1N459 1N458 1N457 equivalent 1N457 equivalent diode for 1n457 SE 442 MIL-PRF-19500/193F MIL-PRF-19500/193E MIL-PRF-19500 MIL-PRF-19500/193F abstract |
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| Abstract: given for general information only. In accordance with ASME Y14.5M, diameters are equivalent to x , TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION SWITCHING DIODE Qualified per MIL-PRF-19500/193 MIL-PRF-19500/193 DEVICES , 0.46 25.40 38.10 3.30 7.62 0.58 38.10 FIGURE 1 Physical dimensions: TYPES: 1N457, 1N458 1N458 ... | Original |
2 pages, |
1N459 equivalent 1N459 1N458 1N457 1N457 equivalent equivalent diode for 1n457 datasheet abstract |
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| Abstract: DOUBLE PLUG CONSTRUCTION SWITCHING DIODE Qualified per MIL-PRF-19500/193 MIL-PRF-19500/193 DEVICES , NOTES: Dimensions are in inches. Millimeters are given for general information only. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. Ltr (DO-35 DO-35) BD BL LD , 38.10 FIGURE 1 Physical dimensions: TYPES: 1N457, 1N458 1N458, and 1N459 1N459 DESIGN DATA Case: Hermetically ... | Original |
2 pages, |
1N459 1N458 1N457 equivalent diode for 1n457 datasheet abstract |
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| Abstract: emitter voltage is lowest. 5. Puise conditions: length = 300 ¿is; duty cycle = 1%. 6. For produci famiiy , : iength = 300 fis; duty cycle = 1%. 6. For product famlly characteristic curves. refer to Curve Set T219. , collector to emitter voltage Is lowest. 5. Puise conditions: length = 300 ¡is: duty cycle = 1%. 6. For , Width = 1 s 1N456/A 1N456/A 1N457/A 1N458/A 1N458/A 1N459/A 1N459/A 25 V 60 V 125 V 175 V 200 mA 500 mA 600 mA 4.0 A 1.0 A PACKAGES 1N456 1N456 1N457 1N458 1N458 1N459 1N459 1N456A 1N456A 1N457A 1N457A 1N458A 1N458A 1N459A 1N459A FDLL456 FDLL456 FDLL457 FDLL457 FDLL458 FDLL458 FDLL459 FDLL459 FDLL456A FDLL456A ... | OCR Scan |
10 pages, |
Schlumberger IN486 IN462A equivalent 1n457 1n456 equivalent IN484B equivalent diode for 1n457 diode 483b PN5135/FTS05135 PN5136/FTS05136 PN5137/FTS05137 PN5135/FTS05135 abstract |
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| Abstract: 6. For product family characteristic curves, refer to Curve Set T145. * Package mounted on 99.5% , collector to emitter voltage is lowest. 5. Pulse conditions: length = 300 (is; duty cycle = 1%. 6. For , collector to emitter voltage Is lowest. 5. Pulse conditions: length = 300 /is; duty cycle = 1%. 6. For , (surge)Peak Forward Surge Current Pulse Width = 1 ¡is Pulse Width = 1 s 1N456/A 1N456/A 1N457/A 1N458/A 1N458/A 1N459/A 1N459/A 25 V 60 V 125 V 175 V 200 mA 500 mA 600 mA 4.0 A 1.0 A PACKAGES 1N456 1N456 1N457 1N458 1N458 1N459 1N459 ... | OCR Scan |
10 pages, |
PN5143 1N459a 1N46 FDLL483B FTS05135 1N458 ll-34 diode PN5135 PN5136 PN5137 in485b PN5142 1N4848 IN484B equivalent diode for 1n457 PN5135/FTS05135 PN5136/FTS05136 PN5135/FTS05135 abstract |
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| Abstract: Zero drift operation can be obtained by adding one extra resistor and a diode Applications for the , IBIAS component) and b2 5 mV C as the tempco of the diode (for best results this value should be , than 5% If the estimate for the tempco of the diode's forward voltage drop was off the tempco , example will show) For lowest tempco with a specific diode at the desired ISET however the circuit should , reduced If the resulting tempco is negative R2 should be increased The recommended diode for use in this ... | Original |
12 pages, |
to92 transistor pinout diode zener B16 LM134 LM234 LM234-6 LM234Z-3 LM234Z-6 LM334Z LM334 LM134-LM234 LM334 equivalent transistor equivalent diode for 1n457 1N457 tempco LM234 14 pin LM134 abstract |
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| Abstract: dependence. Zero drift operation can be obtained by adding one extra resistor and a diode. Applications for , diode (for best results, this value should be directly measured or obtained from the manufacturer of the , will show). For lowest tempco with a specific diode at the desired ISET, however, the circuit should , reduced. If the resulting tempco is negative, R2 should be increased. The recommended diode for use in , the diode (VD) is 0.6V, the voltage across R1 is 67.7mV (64 mV + 5.9% to account for IBIAS), and R2 ... | Original |
14 pages, |
M08A LM134 LM134/LM234/LM334 LM234 LM234-6 LM334 LM334M LM334SM LM334Z equivalent diode for 1n457 1N457 tempco LM334MX LM134/LM234/LM334 abstract |
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| Abstract: dependence. Zero drift operation can be obtained by adding one extra resistor and a diode. Applications for , diode (for best results, this value should be directly measured or obtained from the manufacturer of the , will show). For lowest tempco with a specific diode at the desired ISET, however, the circuit should , reduced. If the resulting tempco is negative, R2 should be increased. The recommended diode for use in , the diode (VD) is 0.6V, the voltage across R1 is 67.7mV (64 mV + 5.9% to account for IBIAS), and R2 ... | Original |
15 pages, |
M08A LM334SM LM334MX LM334M lm334 LM234-6 LM234 LM134 equivalent diode for 1n457 LM134/LM234/LM334 LM134/LM234/LM334 abstract |
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| Abstract: recommended diode for use in this circuit is the 1N457 because its tempco is centered at 11 times the tempco , dependence. Zero drift operation can be obtained by adding one extra resistor and a diode. Applications for , (which includes the IBIAS component), and -2.5 mV/°C as the tempco of the diode (for best results, this , estimate for the tempco of the diode's forward voltage drop was off, the tempco cancellation is still , accurate (as the following example will show). For lowest tempco with a specific diode at the desired ISET ... | Original |
14 pages, |
LM334 LM234-6 LM234 LM334M LM134 equivalent diode for 1n457 LM134/LM234/LM334 LM134/LM234/LM334 abstract |
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| ADJ R set R1* R set 10 D1 1N 457 V V i i V i V * Select ratio of R1 to R set to obtain zero drift i . For the LM134/LM234/LM334 LM134/LM234/LM334 LM134/LM234/LM334 LM134/LM234/LM334, the voltage on the control pin is 64mV at +25 o C and is directly propor resistor and a diode to the external circuit. PIN CONNECTIONS D SO8 (Plastic Micropackage) V + ADJ V - 2 1 currents. THERMAL EFFECTS Internal heating can have a significant effect on cur- rent regulation for an I set above 100 m A. For exam- ple, each increase of 1V in the voltage across the LM134 LM134 LM134 LM134 at I set = 1m www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2157-v2.htm |
STMicroelectronics | 14/06/1999 | 11.83 Kb | HTM | 2157-v2.htm |
| : Terminating Remote Sensor for Voltage Output ADJ R set R1* R set 10 D1 1N 457 V V i i V i V * Select ratio of rectifier and as a source of cur- rent in a.c. applications. For the LM134/LM234/LM334 LM134/LM234/LM334 LM134/LM234/LM334 LM134/LM234/LM334, the voltage on the . Zero drift can be obtained by adding an additional resistor and a diode to the external circuit. PIN - rent regulation for an I set above 100 m A. For exam- ple, each increase of 1V in the voltage across In certain applications, the 15pF value for the shunt capacitance should be reduced : - because of www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2157-v1.htm |
STMicroelectronics | 02/04/1999 | 11.92 Kb | HTM | 2157-v1.htm |
| : Terminating Remote Sensor for Voltage Output ADJ R set R1* R set 10 D1 1N 457 V V i i V i V .c. applications. For the LM134/LM234/LM334 LM134/LM234/LM334 LM134/LM234/LM334 LM134/LM234/LM334, the voltage on the control pin is 64mV at +25 o C and is directly adding an additional resistor and a diode to the external circuit. PIN CONNECTIONS D SO8 (Plastic effect on cur- rent regulation for an I set above 100 m A. For exam- ple, each increase of 1V in than 3. SHUNT CAPACITANCE In certain applications, the 15pF value for the shunt capacitance should www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2157.htm |
STMicroelectronics | 20/10/2000 | 14.59 Kb | HTM | 2157.htm |
| Voltage Output ADJ R set R1* R set 10 D1 1N 457 V V i i V i V * Select circuit to operate as a rectifier and as a source of cur- rent in a.c. applications. For the LM134/LM LM134/LM LM134/LM LM134/LM additional resistor and a diode to the external circuit. PIN CONNECTIONS D SO8 (Plastic heating can have a significant effect on cur- rent regulation for an I set above 100 m A. For , the 15pF value for the shunt capacitance should be reduced : - because of loading problems www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2157-v3.htm |
STMicroelectronics | 04/12/2000 | 13.71 Kb | HTM | 2157-v3.htm |