NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: the LF356 LF356 op-amp and power it using +12V at Pin 7 and -12V at Pin4. Remember to use bypass , answer or do the following: 1. Construct a class A amplifier using a TIP30 TIP30 NPN transistor. These , power terminal to -12V. Make sure to place a heat sink on the TIP29 TIP29 transistor. Make sure to connect , of the op-amp and the transistor is useful as a power amplifier. 11. How much power is being , amplifier using the TIP29 TIP29 and TIP30 TIP30 transistors available in the lab. Use the transistor datasheets to ... | Original |
14 pages, |
lm741 audio power Lm358 as high pass filter TRANSISTOR LM741 LM741 single op-amp LM741 OPAMP audio preamplifier lab report ipod pinout what function the power transistor LM741 Audio Amplifier pin diagram of LM741 op-amp opamp Lm358 pin function assemble stereo amplifier datasheet abstract |
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| Abstract: Simple Melody Generator Features · 64-note ROM memory · 1.3V to 3.3V operating voltage and low power consumption · Packaged in inexpensive TO-92 package · OSC resistor is built-in. · One-shot mode to play and auto stop · Dynamic speaker can be driven with external NPN transistor. General Description The UM66T-19S UM66T-19S is a CMOS LSI designed melody generator IC for use in door bells , toys and other , performance. Produced by CMOS technology , the device results in very low power consumption. And with built-in ... | Original |
2 pages, |
melody generator IC 2SC9013 UM66T UM66* melody generator UM66T-19S UM66T-19S abstract |
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| Abstract: Simple Melody Generator Features · 64-note ROM memory · 1.3V to 3.3V operating voltage and low power consumption · Packaged in inexpensive TO-92 package · OSC resistor is built-in. · One-shot mode to play and auto stop · Dynamic speaker can be driven with external NPN transistor. General Description The UM66T-08S UM66T-08S is a CMOS LSI designed melody generator IC for use in door bells , toys and other , performance. Produced by CMOS technology, the device results in very low power consumption. And with built-in ... | Original |
2 pages, |
SImple Melody Generator UM66T 2SC9013 UM66* melody generator UM66T-08S UM66T-08S abstract |
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| Abstract: FEMTOCLOCKTMCRYSTAL-TO-LVCMOS/LVTTL CLOCK GENERATOR Typical Phase Noise at 125MHz 10 Gb Ethernet Filter Noise Power , FEMTOCLOCKTMCRYSTAL-TO-LVCMOS/LVTTL CLOCK GENERATOR Parameter Measurement Information 1.65V ± 5 Noise Power Phase , ICS840021 ICS840021 FEMTOCLOCKTMCRYSTAL-TO-LVCMOS/LVTTL CLOCK GENERATOR Application Information Power Supply , ICS840021 ICS840021 FEMTOCLOCKTM CRYSTAL-TO-LVCMOS/LVTTL CLOCK GENERATOR General Description Features The ICS840021 ICS840021 is a Gigabit Ethernet Clock Generator and a member of the HiPerClocksTM ... | Original |
14 pages, |
ICS840021AG 840021AG 840021AGLF HC49 HC49S ICS840021 021al 840021AGLFT ICS840021 abstract |
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| Abstract: LETE OBSO HV421 HV421 High Voltage 1 REN Ring Generator Ordering Information Package , is a high voltage ring generator designed to drive 1 North American REN (ringer equivalent number , to +120V Operating Temperature Range Storage Temperature Range SO-8 Power Dissipation 0°C to , HV421 HV421 Electrical Characteristics DC Characteristics Symbol RDS(ON) (VDD=5.0V, RRING=30M , of switching transistor Typ VPP 170 Output voltage on VPP 65 68 FRING Ring ... | Original |
5 pages, |
VP2110K1 VP2110 VN2110K1 VN2110 SOW-20 ring generator with power supply push-pull DC-dc converter zener 9.5v 220V DC circuits power control 220v to 5v cmos ic and gates datasheet DC to 220V AC converter DC converter 325V HV421 HV421LG HV421 abstract |
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| Abstract: memory *1.5V ~ 4.5V power supply and low power consumption *Dynamic speaker can be driven with external NPN transistor *OSC resistor hold mode *Power on reset: melody begins from the first note *Built , UM66TXXL UM66TXXL series are CMOS LSI designed for using in door bell, telephone and toy application. It is an , low power consumption. Since the UTC UM66TXXL UM66TXXL series include oscillation circuits a compact melody , ELECTRICAL CHARACTERISTICS (Vss=0V, Fosc=65536Hz, TJ=25°C, unless otherwise specified) PARAMETER Operating ... | Original |
3 pages, |
Music Generator IC musical FREQUENCY DIVIDER only love SDT-SS-112DM UM66T05 UM66T05L UM66TXXL-T92-B UM66T32L UM66T11L door bell ME 137 UM66TXXL rhythm ic UM66TXXL abstract |
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| Abstract: ~ 4.5V power supply and low power consumption *Dynamic speaker can be driven with external NPN transistor *OSC resistor hold mode *Power on reset: melody begins from the first note *Built in level hold , CMOS LSI designed for using in door bell, telephone and toy application. It is an on-chip ROM programmed for musical performance. Produced by CMOS technology, the device results in very low power , device reliably. ELECTRICAL CHARACTERISTICS (Vss=0V, Fosc=65536Hz, Tj=25°C, unless otherwise specified ... | Original |
3 pages, |
UM66TXXL Music Generator IC musical door bell UM66* melody generator UM66T Series UM66T05L UM66T11L UM66T19L UM66T32L musical FREQUENCY DIVIDER musical door bell circuit UM66T UM66TXXL abstract |
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| Abstract: *64-Note Rom memory *1.5V ~ 4.5V power supply and low power consumption *Dynamic speaker can be driven with external NPN transistor *OSC resistor hold mode *Power on reset: melody begins from the first , UTC UM66TXXL UM66TXXL series are CMOS LSI designed for using in door bell, telephone and toy application. It , results in very low power consumption. Since the UTC UM66TXXL UM66TXXL series include oscillation circuits a , device reliably. ELECTRICAL CHARACTERISTICS (Vss=0V, Fosc=65536Hz, TJ=25, unless otherwise specified ... | Original |
4 pages, |
UM66TXXL UM66* melody generator UM66T UM66T Series UM66T11L 65536HZ UM66T32L UM66T19 UM66T19L UM66T05L UM66 musical door bell ic list musical door bell musical bell UM66TXXL abstract |
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| Abstract: in using MOSFET devices in high power AC control applications where operational characteristics of , photovoltaic generator is an ideal match to the drive characteristics of a MOSFET. A modern power MOSFET , photovoltaic generator voltage, signifying that output transistor Q; should be turning off, enhancement mode , combines photovoltaic isolation with MOSFET power integrated circuit techniques. The International , applied electrical device, preceding in relay telegraph usage the electrical motor and the incandescent ... | OCR Scan |
6 pages, |
photo thyristor high power pulse generator with mosfet mosfet stack RF noise diode generator P-Channel Depletion Mosfets AN-104 photo thyristor application photovoltaic coupler 20DQ relay 6v 100 ohm relay 6v 200 ohm series connection of mosfet AN-104 abstract |
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| Abstract: P-N-P SILICON POWER TRANSISTOR a/ january 1972 - revised october 1984 • Designed for Complementary , TRANSISTOR electrical characteristics at 25°C case temperature parameter test conditions min typ max , (OPTO) 62C 37000 TIP2955 TIP2955 P-N-P SILICON POWER TRANSISTOR PARAMETER MEASUREMENT INFORMATION -w- , POWER TRANSISTOR 62C 37001 D ;f PARAMETER MEASUREMENT INFORMATION -@vCE MONITOR 2N4301 2N4301 «BB1 , 62C 37002 TIP2955 TIP2955 P-N-P SILICON POWER TRANSISTOR •-3g-*/ TYPICAL CHARACTERISTICS STATIC ... | OCR Scan |
6 pages, |
TIP2955 TIP3055 1n914 equivalent 2N4301 DG37G DG37 br c2688 c 2688 circuit tip2955 circuit use tip2955 TR TIP2955 transistor PNP TIP2955 L72B C-2688 TIP2955 abstract |
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| critical when the load is disconnected from the output of the RF power transistor, since, in this case MODEL. Figure 1: npn Bipolar Parasitic Transistor Under impedance mismatch conditions the RF power . VSWR, a characteristic ruggedness parameter for RF power transistors, is linked to the in EWS (Electrical Wafer Sort), can give useful information on the ruggedness of RF power devices output and load. Such an impedance mismatch generates a reflected wave towards the RF power www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7033.htm |
STMicroelectronics | 20/10/2000 | 10.33 Kb | HTM | 7033.htm |
| reflected wave towards the RF power transistor, making a much more stringent working environment for the transistor. Working conditions grow critical when the load is disconnected from the output of the RF power transistor, since, in this case, the reflected wave amplitude becomes comparable to the incident one. RF mismatch conditions the RF power transistor is subjected to a reflected wave with an amplitude that production phase. VSWR, a characteristic ruggedness parameter for RF power transistors, is linked www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7033-v1.htm |
STMicroelectronics | 27/07/2000 | 10.15 Kb | HTM | 7033-v1.htm |
| driving circuit and power stage on the same chip is possible with VI Power technology using a Power the Drive Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT). A , M. Melito ABSTRACT lGBT devices are increasingly used in power electronic equipment due their high power handling capability. The present paper deals with the problems that concern the transient condition tests are given, which clearly demonstrate the advantages of using the new driving www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3665-v1.htm |
STMicroelectronics | 25/05/2000 | 17.44 Kb | HTM | 3665-v1.htm |
| technology using a Power MOSFET output stage. It has not yet been accomplished using lGBT output Circuit Requirements for the Power Insulated Gate Bipolar Transistor (IGBT). A.R. Hefner, IEEE are increasingly used in power electronic equipment due their high power handling capability clearly demonstrate the advantages of using the new driving circuit. Finally, the suitability of the driving circuit for integration is analysed. 1. INTRODUCTION Recent developments in industrial power www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3665.htm |
STMicroelectronics | 20/10/2000 | 17.89 Kb | HTM | 3665.htm |
| ST | CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS Datasheet CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS TDA4605 TDA4605 TDA4605 TDA4605 MODE POWER SUPPLIES USING MOS TRANSISTORS April 1996 1 2 3 4 8 7 6 5 REGULATION INPUT PRIMARY CURRENT discharge of the gate capacitance of the power MOS transistor. 6 Supply voltage : Supply voltage input. From control of a MOS power transistor and all necessary regulation and monitoring functions. The serial www.datasheetarchive.com/files/stmicroelectronics/books/ascii/docs/1204.htm |
STMicroelectronics | 25/05/2000 | 14.13 Kb | HTM | 1204.htm |
| ST | CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS Datasheet CONTROL CIRCUIT FOR SWITCH MODE POWER SUPPLIES USING MOS TRANSISTORS MODE POWER SUPPLIES USING MOS TRANSISTORS April 1996 1 2 3 4 8 7 6 5 REGULATION gate capacitance of the power MOS transistor. 6 Supply voltage : Supply voltage input. From it are TDA4605 TDA4605 TDA4605 TDA4605 assumes control of a MOS power transistor and all necessary regulation and monitoring www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1204-v1.htm |
STMicroelectronics | 25/05/2000 | 13.44 Kb | HTM | 1204-v1.htm |
| diodes to the external power rails and eight P and eight N transistors. The transistors are specifically . The compiled cell generators construct custom cells, which are implemented using a special leaf cell transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I A with slew rate control, current spike suppression and impedance matching. Metallised generators to Sea of Gates time to market. May 1994 Fully independent power and ground configurations for inputs www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2626-v2.htm |
STMicroelectronics | 14/06/1999 | 31.32 Kb | HTM | 2626-v2.htm |
| diodes to the external power rails and eight P and eight N transistors. The transistors are specifically . The compiled cell generators construct custom cells, which are implemented using a special leaf cell transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2. Broad I A with slew rate control, current spike suppression and impedance matching. Metallised generators to Sea of Gates time to market. May 1994 Fully independent power and ground configurations for inputs www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2626-v1.htm |
STMicroelectronics | 02/04/1999 | 31.36 Kb | HTM | 2626-v1.htm |
| , polysilicide gates and thin metal oxide. 3.3 V optimized transistor with 5 V I/O interface capability 2 , current spike suppression and impedance matching. Metallised generators to support SPRAM and DPRAM time to market. May 1994 Fully independent power and ground configurations for inputs, core and corner pads are dedicated to internal and external power supplies. I/O pads may be configured for additional power. 5. Maximum I/O = total device pads minus power pads. Table 1. Product range 1 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2626-v3.htm |
STMicroelectronics | 25/05/2000 | 33.23 Kb | HTM | 2626-v3.htm |
| power distribution. The basic cell is made up of four N and four P type transistors that are transistor with 5 V I/O interface capability 2 - input NAND delay of 0.210 ns (typ) with fanout = 2 . Metallised generators to support SPRAM and DPRAM, plus an extensive embedded function library. Combines Standard Cell Features with Sea of Gates time to market. May 1994 Fully independent power and ground dedicated to internal and external power supplies. I/O pads may be configured for additional power. 5 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2626.htm |
STMicroelectronics | 20/10/2000 | 34.19 Kb | HTM | 2626.htm |