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Part Manufacturer Description Datasheet BUY
TMS465169 Texas Instruments IC EDO DRAM, Dynamic RAM visit Texas Instruments
TMS416809 Texas Instruments IC EDO DRAM, Dynamic RAM visit Texas Instruments
TMS465409 Texas Instruments IC EDO DRAM, Dynamic RAM visit Texas Instruments
TMS416169 Texas Instruments IC EDO DRAM, Dynamic RAM visit Texas Instruments
TMS416169A-60DZ Texas Instruments 1MX16 EDO DRAM, 60ns, PDSO42 visit Texas Instruments
TMS465169P-40DGE Texas Instruments 4MX16 EDO DRAM, 40ns, PDSO50 visit Texas Instruments

edo ram 168

Catalog Datasheet MFG & Type PDF Document Tags

64mb edo dram simm

Abstract: 2mb 72-pin simm e s Go To D RAM 168 Pin Mod u l e s Go To Sy n ch ronous SRAM s Go To S RAM Mod u , 5.0V 3.3V Y Y EDO Fast Page IBM11M16730C DIMM 168 16M x 72 13/11 3.3V Y Fast Page IBM11M16735B DIMM 168 16M x 72 12/12 3.3V Y EDO IBM11M16735C DIMM 168 16M x 72 13/11 3.3V Y EDO IBM11M1720B DIMM 168 1M x 72 10/10 , 64 11/10 5.0V Y EDO IBM11M2645HB DIMM 168 2M x 64 11/10 3.3V Y
IBM
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64mb edo dram simm 2mb 72-pin simm simm72 DIMM 72 pin out ram 168 pin IBM11S43

SO DIMM 72-pin

Abstract: "simm 72 pin" Low Voltage Operation INDEX MENU QUIT s 64M Dynamic RAM with Self Refresh (EDO) Access , QUIT s 16M Dynamic RAM (EDO) Access time MAX. (ns) 50 60 70 50 60 70 50 60 70 60 70 60 70 Refresh , Voltage Operation INDEX MENU QUIT s 16M Dynamic RAM with Self Refresh (EDO) Access time MAX , 16M Dynamic RAM (EDO) Access time MAX. (ns) 50 60 70 50 60 70 50 60 70 50 60 70 50 60 70 Refresh , 16M Dynamic RAM with Self Refresh (EDO) Access time MAX. (ns) 50 60 70 50 60 70 50 60 70 50 60 70 50
NEC
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SO DIMM 72-pin uPD27C8000 MC-422000F32 edo dram 72-pin SO DIMM uPD23C16000 8K/64 4K/64 PD4264405 PD4265405 PD4264805 PD4265805

3524CP

Abstract: 2MX40 Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS Application Frame Memory Specific Memory SGRAM Video RAM DRAM Modules Memory Shortform, EDO DRAM Modules EDO DRAM Modules x 32 EDO DRAM Modules Organisation Partname Vcc Access Time (ns) Package Remark , Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous , 72 8M x 32 HB56U832 5V 2k cycles Memory Shortform, EDO DRAM Modules Organisation x 64 EDO
Hitachi Semiconductor
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3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 HB56U132 HB56H132 HB56U232 HB56H232 HB56U432 HB56U164
Abstract: -Bit Dynamic RAM 5 V EDO. 61 2 2 2 2 2 M M M M M x 32-Bit x 32 , RAM 5 V . 121 4 M x 32-Bit Dynamic RAM 5 V EDO , -Bit Dynamic RAM 5 V . 181 8 M x 36-Bit Dynamic RAM 5 V EDO , D O .389 16 M x 64-Bit Dynamic RAM 3.3 V EDO , -50/-60/-70 322035S/GS -50/-60/-70 1 M x 32-Bit Dynamic RAM 5 V -
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321160S/GS 321OOOS/GS 321005S/GS 322160S/GS 322OOOS/GS 322005S/GS

hitachi hn27c256

Abstract: hm514280 HITACHI Memory Devices CONTENTS · · · · VOLATILE - Dynamic RAM ·Fast Page Mode ·EDO ·Synchronous - Dynamic RAM Modules - Static RAM 10 NON VOLATILE - EPROM - EEPROM / Flash - MaskROM 12 14 15 2 APPLICATION SPECIFIC - Video RAM - FIFO / LINE / Frame RAM / Cache RAM 16 17 LOW VOLTAGE 18 HITACHI Memory Devices 4M DRAM FAST PAGE MODE , - 19 - 60 80 EDO, 3.3V OPERATION 70 4K CYCLES / 64ms REFRESH -6 168 -8 -7
Hitachi Semiconductor
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hitachi hn27c256 hm514280 256K RAM HM62256 1M x 16-Bit x 4 Banks synchronous sRAM BLS 16K-X Hitachi 32k static RAM HM514100 HM514400 HM514800 HM51S4800 HM514900 HM514260
Abstract: EXTENDED-DATA-OUT DYNAMIC RAM MODULES S M M S 684A -A U G U S T 1997-R E V IS E D FEBRUARY 1998 Organization - , Bits Bits Bits Bits JEDEC 168-Pin Dual-ln-Line Memory Module (DIMM) Without Buffer for Use With , Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and Hidden Refresh Serial Presence Detect , ns EDO CYCLE tHPC MIN 20 ns 25 ns 30 ns 'xEPxxDxN-50 'xEPxxDxN-60 'xEPxxDxN-70 description The TM2EP64DPN is a 16M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of eight -
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TM2EP64DJN TM4EP64DPN TM4EP64DJN TM2EP72DPN TM2EP72DJN TM4EP72DPN
Abstract: -byte, 168-pin DIMM. The DIMM is composed of eighteen TMS464409, 16777216 x 4-bit 8K-refresh EDO dynamic , -byte, 168-pin DIMM. The DIMM is composed of eighteen TMS465409, 16777216 x 4-bit 4K-refresh EDO dynamic , -byte, 168-pin DIMM. The DIMM is composed of eighteen TMS464409,4194309 x 4-bit 8K-refresh EDO dynamic , -BIT EXTENDED-DATA-OUT DYNAMIC RAM MODULES _SMMS695A - AUGUST 1997 - REVISED NOVEMBER 1997 , -V Power Supply (±10% Tolerance) JEDEC 168-Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use -
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TM16EN64HPU TM16EN64LPU 64-BIT TM16EN72HPU TM16EN72LPU 72-BIT

TM2EP64DJN

Abstract: TM2EP64DPN -byte, 168-pin DIMM. The DIMM is composed of 18 TMS427809A, 2097152 × 8-bit 2K-refresh EDO DRAMs, mounted on , EXTENDEDDATAOUT DYNAMIC RAM MODULES SMMS684A - AUGUST 1997 - REVISED FEBRUARY 1998 D Organization D D D D D D D JEDEC 168-Pin Dual-In-Line Memory - TM2EP64DxN . . . 2 097 152 × 64 Bits - , LVTTL Interface Long Refresh Period: 32 ms (2 048 Cycles) 3-State Output Extended-Data-Out (EDO , EEPROM Ambient Air Temperature Range 0°C to 70°C Gold-Plated Contacts EDO CYCLE tHPC MIN 20 ns
Texas Instruments
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TM4EP72DJN 168-P TM2EP64D TM2EP72D TM4EP64D TM4EP72D
Abstract: ns 18 ns 70 ns 35 ns EDO CYCLE ` HPC MIN 20 ns 25 ns 30 ns JEDEC 168-Pin Duaf-ln-Line Memory , EXTENDED-DATA-OUT DYNAMIC RAM MODULES Organization - TM2EP64DxN . . . 2097152 x 64 Bits - TM2EP72DxN . . . 2097152 , Period: 32 ms (2 048 Cycles) 3-State Output Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR , 2EP64DPN is a 16M-byte, 168-pin, dual-in-line memory module (DIMM). The DIMM is composed of eight TMS427809A, 20 97 15 2 byte x 8-bit 2K-refresh EDO DRAMs, each in a 400-mil, 28-pin plastic TSOP (DGC suffix -
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TM2EP640PN TM2EP720JN 16M-B TM2EP640JN SMMS684

tme 126

Abstract: HB56UW272E-7B/8B 2,097,152-Word x 72-Bit High Density Dynamic RAM Module 168-pin JEDEC Standard , main memory solution for 4 and 8 % te processor ^plications. The HB56UW272E is a 3VI x 72 dynamic RAM , -bit BiCMOS line driver (74LVT16244) sealed in TSSOP package. The HB56UW272E offers Extaided Ehta Out(EDO) Fkge Mode as a Ugh ^eed access mode An cutline cf theHB56UW272E is 168-pin socket Type package (dual , each TSOP on the its module board. Features · 168-pin socket type package (Dual lead out) - Lead
-
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tme 126 152-W HM51W17805BTT
Abstract: DYNAMIC RAM MODULES SMMS692 - AUGUST 1997 , Single 3.3-V Power Supply (±10% Tolerance) JEDEC 168-Pln Dual-ln-Line Memory Module (DIMM) Without Buffer , -State Output Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and Hidden Refresh , ES S TIME *CAC (MAX) 11 ns 13 ns 15 ns TIME ·a a (MAX) 20 ns 25 ns 30 ns EDO CYCLE tHPC (MIN) 20 ns 25 ns description TheTM 4EN 64KPU is a 32M-byte, 168-pin, dual-in-line memory module (DIMM). The -
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TM4EN64KPU TM4EN64NPU TM8EN64KPU TM8EN64NPU TM4EN64 TM8EN64

lg 15.6 pinout

Abstract: tp 147 VE16418165B,VE26418165B 1M.2M x 64-Bit Dynamic RAM Module_ Description The VE16418165B and VE26418165B are 1 M x 64-bit and 2 M X 64-bit dual-in-line dynam ic RAM m odules(DIM M ). It is mounted by 4/8 , : 2.59/2.45 W (Max) - Standby mode : 7.2m W (Max) · E xtended-data-out (EDO) page mode capability · LV , capability RAS only refresh, CAS before RAS refresh, and hidden refresh · 168 pin Dual in-line memory module , : 2.62/2.48 W (Max) - Standby mode : 14.4mW (Max) · E xtended-data-out (EDO) page mode capability · LVTTL
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lg 15.6 pinout tp 147 VG26V18165BB E16418165B 1G5-0063 18165B
Abstract: -byte, 168-pin DIMM. The DIMM is composed of eighteen TMS464409,4194 309 x 4-bit 8K-refresh EDO dynamic , TEN D ED -D ATA-O U T DYNAMIC RAM M O D ULES , -byte, 168-pin, duai-in-line memory module (DIMM). The DIMM is composed of sixteen TMS465409,16777216 x 4-bit 4K-refresh EDO dynamic random-access memories (DRAMs), each in a 400-mil, 32-pin plastic thin , data sheet (literature number SMKS895). The TM16EN64LPU is a 128M-byte, 168-pin DIMM. The DIMM is -
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16EN64LPU16777216 16EN72HPU PU-50 PU-60 128M- JEP-106E

upd23c8000

Abstract: uPD4504161 DIMM - Unbuffered type EDO,Fast Page Mode DRAM Module 168-pin 8 byte DIMM - Buffered type 144-pin 8 , Synchronous Graphics RAM Line Buffer Field Buffer MENU · 64M EDO Dynamic RAM Access Organization (words , -pin TSOP II (400 mil) Package Remarks µPD4265405 µPD4265805 µPD4265165 MENU · 64M EDO Dynamic RAM , 168-pin DIMM Socket type (Gold plated) EDO Package Remarks MENU · 144-pin 8 Byte SO DIMM (SO DIMM , MENU Dynamic RAM Dynamic RAM Module Static RAM Mask ROM Flash Memory COMBO Memory MCP(Flash memory
NEC
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upd23c8000 uPD4504161 uPD23C8000X upd4502161 MC-22100N MC-22101N MC-22102 MC-22103 MC-22000
Abstract: Data Out (EDO) Page Mode as a high speed access mode. An outline of the HB56U264EJN is 168-pin socket , HB56U264EJN Series 2,097,152-word x 64-bit High Density Dynamic RAM Module HITACHI Under , HB56U264EJN is a 2M X 64 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117805BJ) sealed in SOJ , are mounted beneath each SOJ on the module board. Features · 168-pin socket type package (Dual , (max) - Standby mode (TTL): 84 mW (max) - Standby mode (CMOS): 42 mW (max) · EDO page mode capability -
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24C02 HB56U264EJN-6B HB56U264EJN-7B HB56U264EJN-8B

168pin dram socket

Abstract: Hitachi DSA00164 Out (EDO) Page Mode as a high speed access mode. An outline of the HB56U264EJN is 168-pin socket type , HB56U264EJN Series 2,097,152-word × 64-bit High Density Dynamic RAM Module Under development , a 2M × 64 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117805BJ) sealed in SOJ package , mounted beneath each SOJ on the module board. Features · · · · · · 168-pin socket type , mode: 5.1/4.7/4.2 W (max) - Standby mode (TTL): 84 mW (max) - Standby mode (CMOS): 42 mW (max) EDO
Hitachi Semiconductor
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168pin dram socket Hitachi DSA00164
Abstract: Out (EDO) Page Mode as a high speed access mode. An outline of the HB56U264EJN is 168-pin socket type , HB56U264EJN Series 2,097,152-word × 64-bit High Density Dynamic RAM Module Under development , a 2M × 64 dynamic RAM module, mounted 8 pieces of 16-Mbit DRAM (HM5117805BJ) sealed in SOJ package , mounted beneath each SOJ on the module board. Features â'¢ â'¢ â'¢ â'¢ â'¢ â'¢ 168 , ): 42 mW (max) EDO page mode capability 2,048 refresh cycle: 32 ms Note: This document contains Hitachi Semiconductor
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MT41LC256K32D4

Abstract: BEDO RAM TM Burst EDO DRAMs TECHNOLOGY, INC. 1 What are Burst EDO DRAMs? Burst EDO (BEDO) DRAMs , EDO DRAMs that contain a pipeline stage and a 2-bit burst counter t Bond option on standard DRAMs t Same package, pinout and die as Fast Page Mode (FPM) and Extended Data-Out (EDO) DRAMs , TECHNOLOGY, INC. 2 Burst EDO vs. Synchronous DRAM BEDO is Technologically Superior 66 MHz Design , get the cost down on the pipelined SDRAMs because the die size is larger.the burst EDO approach
Micron Technology
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MT41LC256K32D4 BEDO RAM MT4C16270 Matsushita fp-m MT4LC4M4G6 Matsua fp-m

4Mx64

Abstract: VIS · EDO Page Mode Early Write Cycle Preliminary VE46417405C 4M x 64- Bit Dynamic RAM Module , VIS Description Preliminary VE46417405C 4M x 64- Bit Dynamic RAM Module The VE46417405C is 4Mx64-bit dual-in-line dynamic RAM modules (DIMM). It is mounted by 16 pieces of 4Mx4(VG26V17405C , (EDO) page mode capability · LV TTL compatible I/O levels · 2048 refresh cycles during a 32 ms period · Multiple refresh modes capability RAS only refresh, CAS before RAS refresh, and hidden refresh · 168
Vanguard International Semiconductor
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4Mx64 VS26417801A VS46417801A 1G5-0103 VG25V17405C S208B

TEXAS 77261

Abstract: 77261 TM16ER72HP16777216 BY 72-BIT TM16ER72LP16777216 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM , TM16ER72LP-XX . . . 16777216 x 72 Bits Single 3.3-V Power Supply (±10% Tolerance) JEDEC 168-Pin Dual-In-Line , -State Output Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and Hidden Refresh Ambient , ns 25 ns 30 ns EDO CYCLE *HPC (MIN) 16 ris 20 ns 25 ns description The TM16ER72HP is a 128M-byte, 168-pin, buffered dual-in-line memory module (DIMM). The DIMM is composed of eighteen TMS465409
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TEXAS 77261 77261 texas instruments 77261 SMMS694 TM16ER72HP-XX TM16ER72XP-XX 64M-BH 400-M TM16ER72LP
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