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Part Manufacturer Description Datasheet BUY
LT1172CT#31 Linear Technology IC IC,SMPS CONTROLLER,CURRENT-MODE,BIPOLAR,ZIP,5PIN,PLASTIC, Switching Regulator or Controller visit Linear Technology - Now Part of Analog Devices
TMS45160L-80DZ Texas Instruments 256KX16 FAST PAGE DRAM, 80ns, PDSO40 visit Texas Instruments
TMS45160S-10DZ Texas Instruments 256KX16 FAST PAGE DRAM, 100ns, PDSO40 visit Texas Instruments
TMS45160-10DZ Texas Instruments 256KX16 FAST PAGE DRAM, 100ns, PDSO40 visit Texas Instruments
TMS45160S-80DZ Texas Instruments 256KX16 FAST PAGE DRAM, 80ns, PDSO40 visit Texas Instruments
TMS45160P-10DZ Texas Instruments 256KX16 FAST PAGE DRAM, 100ns, PDSO40 visit Texas Instruments

dram zip 256kx16

Catalog Datasheet MFG & Type PDF Document Tags

1mx8

Abstract: DPS 119 /2Mx16/1Mx32, 1 7 - 35ns, ZIP/SIM M . 29 1Mx8/512Kx16/256Kx32, 70- 150ns , , ZIP/SIM M . 73 1Mx9/512Kx18/256Kx36, 2 0 - 4 5 n s ,Z IP .79 2Mx8/1Mx16/512Kx32, 1 7 - 25ns, DRAM PRODUCTS , /256Kx16/128Kx32, 120 - 250ns, P G A . 121 1Mx8/512Kx16/256Kx32, 150-250ns, S IM
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OCR Scan

dram zip 256kx16

Abstract: , 2 0 -45ns, ZIP .37 D P S 2 5 6 S 8 A P , . 79 DRAM PRODUCTS DPD16MX8PH4 EPROM PRO DUCTS DPV12832VA DPV256S32W FLASH PRO DUCTS DPZ128X32VTP , . 85 . 128Kx32/256Kx16/512Kx8, 120- 250ns, P G A , .115 .128Kx32/256Kx16/512Kx8, P G A , -Pin SOJ 36-Pin SIP 64-Pin SIMM 64-Pin ZIP/SIMM 64-Pin ZIP 4&Pin DIP/CULL 34-Pin SOP 66-Pin PGA 64-Pin SIMM
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OCR Scan
dram zip 256kx16 DPS1MS16P/XP 24/512K 8/512K 16/256K DPS256S32W DPS256X32L/W

KMM584000B

Abstract: KM41C464 ZIP 16 Pin DIP 18 Pin PLCC 16 Pin ZIP 16 Pin DIP 18 Pin PLCC 16 Pin ZIP 18 Pin DIP 18 Pin PLCC 20 Pin ZIP 18 Pin DIP 18 Pin PLCC 20 Pin ZIP 18 Pin DIP 20 Pin SOJ 20 Pin ZIP 20 Pin TSOP-l(Forward) 20 Pin TSOP-l(Reverse) 20 Pin TSOP-ll(Forward) 20 Pin TSOP-ll(Reverse) 18 Pin DIP 20 Pin SOJ 20 Pin ZIP 20 Pin , SOJ 20 Pin ZIP 20 Pin TSOP-l(Forward) 20 Pin TSOP-l(Reverse| 20 Pin TSOP-ll(Forward) 20 Pin TSOP-ll(Reverse) 18 Pin DIP 20 Pin SOJ 20 Pin ZIP 20 Pin TSOP-HForward) 20 Pin TSOP-l(Reverse) 20 Pin TSOP-ll
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OCR Scan
KM41C464P KMM584000B KM41C464 KM424C256Z 4Mx1 nibble KMM591000B KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z

AS27C256

Abstract: 27c eeprom , 5V & 3.3V FPM / EDO / DRAM 4MEG MCM (128k x 32, 5V, 3.3V) 1 MEG (128K x 8 5V & 3.3V) 4 , DENSITY (KBITS) CONFIG. FEATURES PART # SMD # 5962- SPEED (NS) DRAM 256 256K x 1 FPM AS4C1259 DRAM 256 64K x 4 OE/FPM AS4C4067 DRAM 1,024 1M x 1 FPM AS4C1024 DRAM 1,024 256K x 4 FPM AS4C4256 90617 4,096 1M x 4 FPM MT4C4001J 90847 DRAM 4,096 4M x 1 FPM MT4C1004J EEPROM 1,024 128K x 8 128 Byte Page
Austin Semiconductor
Original
AS27C256 27c eeprom 92132 eeprom dip 36 uv 256Kx4 ZIP FLASH MEMORY 29F 16MEG MIL-STD-883 1250C MIL-PRF-38534 MIL-PRF-38535

HM62V8512LFP

Abstract: M51419 Memories Dynamic RAMs DRAM Access time (ns) -16Mx1 -4Mx4 -3.3V operation60 70 80 J F.P. 4k , -operation I- 512kx9 4M 256kx16 HHM51W4800ATT i H M51W4800CTT H H M514900AJ/ATT .512 _ cycles 2CAS , : S O J, Z : ZIP, TT : TSOP-II (Normal bend), RR : TSOP-II (Reversed bend) F .P .: Fast page, E , DRAM Cycle time (ns) 2M 4M 16M -64kx16x2 banks- -128kx16x2 banks-2Mx4x2 banks-1Mx8x2 banks - , : ZIP, TT : TSOP-II (Normal bend), RR : TSOP-II (Reversed bend) F.P. : Fast page, EDO : Extended
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OCR Scan
HN62318EP HM62V8512LFP M51419 HM53861J 16M dram m514280 HM63021P HM5116100AS/ATS HM5116400AS/ATS 1HM51W16400AS/ATS 1HM5117400AS/ATS HM51W17400ATS HM5117800BJ/BTT

I8833C

Abstract: dram zip 256kx16 . 227 2Meg 256Kx8 4Meg 256Kx16 ¿EDI8F16257C. < 2 3 5 4Meg 256KX16 ÆDI8M16256C. , . 332 High Density ZIP, Superior Vertical Package , . 337 Test Enable Function for 1Mx1 DRAM
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OCR Scan
I8833C

dram zip 256kx16

Abstract: DRAM 64kx16 Changed Point in '96 DRAM Databook (Compared with '95 databook) Changed Point in '96 DRAM databook - Remove TSOP ll(reverse) package General - Remove 80ns version in 5V product - Remove SC Mode, WPB , - 512Kx8. 256Kx16 Generation Change - 16Mx1, 4Mx4, 2Mx8 - 1Mx16 - 16Mx4, 8Mx8 - 4Mx16 1M in '95 , '96 - Add 5V 64M DRAM : x4(4K) and x8(K) - Add 128Kx8(FP/EDO), 64Kx16(2WE, FP/EDO) - Add EDO Quad CA5 product 4M C-ver - Remove DIP and ZIP package - Remove SC, WPB Mode product 4M B/W 16M
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OCR Scan
DRAM 64kx16

128-QFP

Abstract: M5M410092 A -MITSUBISHI ELECTRIC L-31004-0C New Product / Under Development ASM Function Memory cap Organization Type name Supply Voltage(V) Access time (ns) Synchronous DRAM 4M 4M Synchronous Graphic RAM 16M Cached DRAM 4M 256KX16 3D-RAM 10M 320KX32 16M 1MX16 10M 320KX32 M5M410092C 3.3V+5% 8 10 TBD TBD 128QFP CMOS 0.35pm '98/7 2bankxl28Kxl6 , technology Sample '98/10 Already availability H P = DIP , J = SMD , L = ZIP , VP = TSOP type I ,TP=TSOP
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OCR Scan
128-QFP M5M410092 m5m4v4169c M5M4V4S40C M5M4V4S40DTP M5M4V16G50D M5M4V4169C M5M4V16169D M5M410092B

GM76C256all

Abstract: GMM794000BS70 DRAM (Continued) Capacity M ax Access Time O r* Type No tRAC 4M Bit 256KX16 GM71C4170AJ/AZ/AT/AR , FUNCTION GUIDE DRAM Capacity Org Type No Max Access Time tRAC tCAC tA A Current (mA) Active , 512cydes/8ms 18DIP(300) 20(26) SOJ (300) 20ZIP(400) 20DIP(300) 20(26) SOJ (300) 20 ZIP (400) NOW 1 , ) Fast Page Mode 1024 cycles/16ms 20(26) SOJ NOW (300) 20 ZIP (400) 5V + 10% 20(26)TSOPII Fast Page Mode -NORMAL 1 1024 cydes/128ms -REVERSE (200uA) (300) (Lo* Power) 1 20(26) SOJ NOW (300) 20 ZIP (400
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OCR Scan
LR-80 GM23C410 GM23C810QA-12 GM76C256all GMM794000BS70 GM71C18160A GM23C400 GM71C1000B/BJ/BZ-60 GM71C10008/BJ/BZ-70 GM71C GM71C10006UBLJ/BLZ-60 GM71C10006UBLJ/BLZ-70 GM71C10006UBLJ/BLZ-80

KM44C1003

Abstract: KM48C2100AL MEMORY ICs 2. PRODUCT GUIDE (DRAM) Density 1M bil FUNCTION GUIDE Org. 1Mx1 Power , /70/80 Fast Page J:20 Pin SOJ Z:20 Pin ZIP 4 M b it 4Mx1 5V±10% KM41C4000C , Page Z:20 Pin ZIP T:20 Pin TSOP-II (Forward) TR:20 Pin TSOP-II (Reverse; 3.3V±0.3V KM41V4000C , % KM49C512B# KM49C512BL# 256Kx16 5V±10% KM416C256B# KM416C256BL# KM416C254B# KM416C254BL# 50/60/70/80 Fast , TSOP-ll(Forward) 4M B/W 256KX16 3.3V±0.3V KM416V256B# KM416V256BL# KM416V254B# KM416V254BL# 256KX18
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OCR Scan
KM44C1003 KM48C2100AL KM416C254 KM418C256 KM44V4100AL KM41C1000D KM41C10OOD-L KM44C256D KM44C256D-L KM41C4000CL KM41C4002C

GM76C88AL FW

Abstract: 71C4260 FUNCTION GUIDE DRAM Capacity (>rg Type No Max Access Tim e tftAC 1M Bit 1Mx1 GM71C1000B/BJ/BZ , 512cydes/64ms 5V f 10% (Lew Power) Fast Page Mode (300) 20 ZlP(400) 20 DIP (300) 20(26) SOJ (300) 20 ZIP , 60 70 80 Fast Page Mode 20 ZIP(400) 20(26) TSOP 1 1 -NORMAL 1024 cydes/128ms -REVERSE (300 , DRAM (Continued) M a x Access Tim e Capacity (>rg tRAC tCAC 15 20 25 15 20 25 15 20 25 15 20 25 15 , ) Fast Page Mode 1024 cydes/16ms 20(26) SO I (300) 20 ZIP (400) '96 3Q 20(26) TSOPII -NORMAL
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OCR Scan
GM76C88AL FW 71C4260 Tlr8 GM23C32000 HR80 GM71G GM71C1000B/BJ/BZ-70 GM71C1Q0 B/BJ/BZ-80 GM71C1000BL/BLJ/BLZ-60 GM71C1OOOBL/BLJ/BLZ- GM71C1000BL/BIJ/BLZ-80

3524CP

Abstract: 2MX40 CP;TTP 5.0 DRAM FPM 256kx16 70;80 40 CP;TTP 5.0 nnd 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 1k refresh HM514270D 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 512 refresh HM514260C/CL 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 nnd HM514260D 4Mbit DRAM FPM 256kx16 60;70;80 40;44 CP;TTP 5.0 HM514265C 4Mbit DRAM EDO 256kx16 60;70;80
Hitachi Semiconductor
Original
3524CP 2MX40 RAM128KX8 DIP HM624256 16Mbit FRAM HM62832 HB56U132 HB56H132 HB56U232 HB56H232 HB56U432 HB56U832

1004CL

Abstract: KM48V2104B CMOS DRAM 2. Product Guide General Information D e iifty 1M bit m » 1Mx1 iJ P P N M I , Pin DIP (256Kx4) 60/70/80 Fast Page J:20 Pin SOJ Z:20 Pin ZIP 55/60/70 Fast Page J:24 Pin SOJ , CMOS DRAM General Information D e b a tte t . PmiHW r; KM416C256B# KM416C256BL# KM416C254B , Fast Page J:40 Pin SOJ T:40 Pin TS O P-ll(Forw ard) 4M B/W 256Kx16 5V±10% 16M bit 16Mx1 , ) EDO(4K) 22 e l e c t r o n ic s CMOS DRAM General Information D ih ity 16M bit Org
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OCR Scan
1004CL KM48V2104B KM44V16104AK 44v16104 4M DRAM EDO KM48V2100B KM41C1000D-L KM48C128 KM48C124 KM416C60 KM416C64 KM41V4000CL

KM424C256Z

Abstract: KM41C464 Page Page 16 Pin 18 Pin 16 Pin 16 Pin 18 Pin 16 Pin 16 Pin 18 Pin DIP PLCC ZIP DIP PLCC ZIP DIP , Now 16 Pin ZIP 18 Pin DIP 18 Pin PLCC 20 Pin ZIP 18 Pin DIP 18 Pin PLCC 20 Pin ZIP 18 Pin DIP 20 Pin SOJ 20 Pin ZIP 20 Pin TSOP-l(Forward) 20 Pin TSOP-l(Reverse) 20 Pin TSOP-ll(Forward) 20 18 20 20 Pin Pin Pin Pin TSOP-ll(Reverse) DIP SOJ ZIP 1M bit KM41C1000CP KM41C1Ü00CJ KM41C1000CZ , 20 Pin SOJ 20 Pin ZIP 20 Pin TSOP-l(Forward) 20 Pin TSOP-l(Reverse) 20 Pin TSOP-ll(Forward) 20 Pin
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OCR Scan
PB20 KM64258 64k 30-pin SIMM KM23C2 KM41C4000BJ KM68512 KM41C255J KM41C258Z KM41C25BP KM41C258J KM41C464J KM41C464Z
Abstract: DRAM (1) DRAM - Normal Voltage Versions (CMOS) Vcc= +5V±10%, Ta=0°C to +70°C Organization ( Wx b ) Part Number Access Time max. (ns) 6 0 [1 5 ]'1 70[20]*1 60[15]' 1 70[20]"1 60[15]"1 70[20]"1 6 0 [1 5 ]'1 7 0 [ 2 0 j'1 6 0 [1 5 ¡' 1 70[20]*1 6 0 (1 5 ]'1 70[20]' 1 60[15]' 1 70[20]' 1 6 , ) Power Consumption max. (mW) Operating Standby Mod« (CMOS level) Packages SOJ ZIP TSOP M B 8 1 4 1 , 2 6 0 -7 0 M B 8 1 4 2 6 0 S -6 0 L M B 8 1 4 2 6 0 S -7 0 L 256Kx16 M B 8 1 4 2 6 5 -6 0 M B 8 1 4 -
OCR Scan

KMCJ532512

Abstract: KM28C64B KM49C512B-8 KM49C512BL-6 H KM49C512BL-7 KM49C512BL-8 KM49C512BLL-6 256Kx16 KM416C256B , ELECTRONICS MEMORY ICs 4M B/W 256KX16 KM416C254B-5 - KM416C254B-6 FUNCTION GUIDE - KM416C254B-7 - , -17 KM684002-20/L-20 KM684002-25/L-25 - 256KX16 KM6164002-20/L-20 KM6164002-25/L-25 KM6164002 , Pin DIP J:20 Pin SOJ Z:20 Pin ZIP V:20 Pin TSOP-I (Forward) 256Kx4 5V±10% KM44C256C , # KM41C4002C# 50/60/70/80 Fast Page P:20 Pin DIP J:20 Pin SOJ Z:20 Pin ZIP Static Column 60/70/80 Fast
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OCR Scan
KM41C4000C-6 KMCJ532512 KM28C64B KM23C1000-20 30-pin simm memory "8m x 8" SIMM 1Mx9 30-pin simm memory "16m x 8" KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6

256kx16 ucas zip

Abstract: (V)16256 has conventional DRAM mode which is selectable by a timing setting when RAS falls. The MSM5416256 has conventional two CAS type 256KX16 DRAM compatible pinout. FEATURES Selectable function mode; Burst mode and DRAM mode Hyper page mode _ Byte wide control: 2 CAS control Write-per-bit ( not persistent write-per-bit) 262,144 words by 16 bits organization Pin compatible with 2 CAS type 256KX16 DRAM , GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration
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OCR Scan
256kx16 ucas zip MSM5416256/MSM54V16256 MSM54 MSM5416256-10 MSM5416256-12 MSM5416256-15 MSM5416256-20

mb87020

Abstract: tag 9335 . 1 Memory Products DRAMs SGRAMs Synchronous DRAMs (SDRAMs) DRAM Modules SDRAM Modules pg , Display pg. 27 pg. 27 Part Number Guide 1 Megabit-A DRAMs 4 Megabit DRAMs DRAM Modules SDRAM , assembly plant in Dublin, Ireland, since 1980, and in 1991 a fully automated DRAM module assembly line was installed to help cater to the massive demand for DRAM modules for the PC upgrade market , Time Max Organization (ns) MB81C1000A -60 -70 1M CMOS DRAM FPM* 1M x 1 MB81C4256A
Fujitsu
Original
mb87020 tag 9335 MB87086 MB87086A FPF21C8060UA-92 2M X 32 Bits 72-Pin Flash SO-DIMM SD-SG-20342-9/96

AA 170 circit diagram

Abstract: 256KX16 DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance graphics applications. In addition to the burst mode, the MSM54(V)16256 has conventional DRAM mode which is selectable by a timing setting when RAS falls. The MSM5416256 has conventional two CAS type 256KX16 DRAM compatible pinout. FEATURES â'¢ Selectable function mode; Burst mode and DRAM mode â'¢ Hyper page mode _ , words by 16 bits organization â'¢ Pin compatible with 2 CAS type 256KX16 DRAM â'¢ Single +5V Supply, Â
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OCR Scan
AA 170 circit diagram MSM5416256 ucas zip DQ8-15 72M2M0 7S424D
Abstract: M IC R O N SEMICONDUCTOR. MC 512K X 8 MT4C8512/3 WIDE DRAM WIDE DRAM FEATURES · , NONPERSISTENT MASKED WRITE access cycle (MT4C8513 only) 512K X 8 DRAM FAST-PAGE-MODE PIN ASSIGNMENT (Top View) 28-Pin SOJ (SDB-1) Vcc C 28-Pin ZIP (SD;V1 ) OE 005 007 Vss 1 2 3 5 7 4 CÄS 006 1 28 , mil) Plastic TSOP (400 mil) Plastic ZIP (375 mil) MARKING - 6* -7 -8 8512 8513 DJ TG , 8 WIDE DRAM FUNCTIONAL BLOCK DIAGRAM M T 4 C M 1 2 /3 REV. 7/Ä3 2 Micron SeflMconducKx -
OCR Scan
MT4C8512 MT4C16256 MT4C16257 MT4C16258 MT4C16259 MT4C16258L
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