NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PMP4501G T/R | NXP Semiconductors | NPN/NPN matched double transistors | 
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| BCM847BS T/R | NXP Semiconductors | NPN/NPN matched double transistors |
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| PMP5201G T/R | NXP Semiconductors | PNP/PNP matched double transistors |
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| PMP5501G T/R | NXP Semiconductors | PNP/PNP matched double transistors |
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| BCM857DS T/R | NXP Semiconductors | PNP/PNP matched double transistors |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: (dB) f=2GHz 1.5 1.3 1.3 IP3, using bypassing to improve it Figure 1: transistor Double , wideband technology. Philips' fifth generation die technology uses a double polysilicon process with a , double poly silicon wideband technology (see figure 1) uses a steep emitter doped profile resulting in , carriers with a small offset in frequency. Due to transistor nonlinearities, these two carriers generate , product C Out BFG4xx the base-emitter and collector-emitter voltages of a transistor used in an ... | Original |
8 pages, |
0805CS 2F1 SMD Transistor BFG403W BFG425W APPLICATION BFG520 smd capacitor philips 0805 smd transistor W1 BFG410W BFG425 BFG425W 2 GHz LNA smd transistor w2 schematic diagram induction heating KV96-157 KV96-157 abstract |
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| Abstract: • High performance, low power, CMOS double metal process • Single +5V (±10%) power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible • Fast match time , A7[ 3 22 ] A3 A8[ 4 21 ] A2 A9[ 5 20 ] Al A10[ 6 19 ] AO Al 1 [ 7 16 ] MATCH A12 [ a 17 ] DQ4 , 13 A4 A3 A2 Al AO MATCH ] DQ4 ] DQ3 ] DQ2 ] DQ1 DJB § GENERAL DESCRIPTION The Micron SRAM family employs high speed, low power CMOS designs using a 4-transistor memory cell. They are fabricated ... | OCR Scan |
8 pages, |
MT5C6405 MT5C6405T MT5C6405T abstract |
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| Abstract: product The BFG480W BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 BFG400 series. , Application information 2.4 GHz low noise amplifier with the BFG480W BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W BFG480W, it is possible to design Low Noise Amplifiers (LNAs) for high , Philips 0603 Philips k RF transistor collector to base bias R2 39 0603 Philips collector series bias; levelling hFE spread C1 5.6 pF 0603 Philips input match (base coupling ... | Original |
5 pages, |
TRANSISTOR noise figure measurements MGS629 BFG400 0805CS transistor amplifier 3 ghz BFG480W BFG480W abstract |
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| Abstract: fifth generation BFG425W BFG425W and BFG410W BFG410W Double Poly RF-transistors. The BB142 BB142 is a new varactor specially , Introduction: With the new Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low , noise at 60 kHz , Negative impedance Negative impedance DC-filter RF-bypass RF-bypass match between VCO and buffer RF-feed/output match Output match/filter Bias Bias Bias Bias Bias Better RF-stability (K>1 ... | Original |
6 pages, |
TRANSISTOR noise figure measurements tdk VCO BFG425W APPLICATION BFG425W BFG410W BB142 2K 0402 1K 1608 datasheet abstract |
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| Abstract: example of a Low Noise Amplifier with the new BFG403W BFG403W Double Poly RF-transistor. The LNA is designed for , Introduction: With the new Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low , performance: transistor: BFG403W BFG403W Vce~0.9V, Ic ~1mA, VSUP~1.5V freq=900MHz Gain~16dB NF , Input match (input to base) C2 27 pF 900 MHz short (L1 to ground) C3 27 pF 900 MHz short (L2 to ground) C4 100 nF RF decoupling collector bias C5 1.2 pF Output match (collector to output) Coil_1 ... | Original |
6 pages, |
BFG403W amplifier 900mhz 0805CS 0805CS Series datasheet abstract |
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| Abstract: Description of product BGA2003 BGA2003: RF transistor with internal bias circuit. Benefit is lower component count , supply. 1/20/00 1 Philips Semiconductors B.V. Abstract Philips' double poly fifth generation , transistor with integrated bias and control input. The application described here is specially intended as , decoupling Current setting RF-short to ground Input match, DC-decoupling Output match Output match see ... | Original |
4 pages, |
MLG1608 BGA2003 RNR-T45-98-B-0709 RNR-T45-98-B-0709 abstract |
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| Abstract: Transistor Output Model Freescale Semiconductor, Inc. Figure 9. Double Section Input Matching The , its advantages over a conventionally matched 800 MHz transistor. Also described will be the , power of current 800 MHz transistors does present a number of problems: larger transistor die would , in a RF transistor. This is to some degree offset by a larger die size but doubling the output power, assuming similar efficiency, will double the heat dissipation in the package. Making the ... | Original |
9 pages, |
uhf amplifier design Transistor TRANSISTOR D 1978 MRF898 AN1530 transistor j326 AN1530/D AN1530/D abstract |
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| Abstract: CMOS Process Options CMOS Selection Guide ® June 1995 * Process Code description Mitel CMOS processes cover a wide range of Operating Voltages from 1.2 Volts up to 15 Volts. All processes are available with double poly and double metal layers, and high accuracy/low TCR resistance option. , match your requirements. CS 1 1 CP 2 1 1 2 2 2 C*152 1.5 1.2 , L-Eff N / P [um] 5.0 Transistor 1.2 [Volts] C*120 [um] Starting Material, Well ... | Original |
2 pages, |
WELL datasheet abstract |
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| Abstract: example of a Low Noise Amplifier with the new BFG425W BFG425W Double Poly RF-transistor. The LNA is designed for , Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low noise amplifiers for , Designing the circuit: The circuit is designed to show the following performance (target): transistor , C1 3.3 pF Input match (input to base) C2 8.2 pF 1.5GHz short (L1 to ground) C3 8.2 pF 1.5GHz short (L2 to ground) C4 1 nF RF decoupling collector bias C5 82 pF Output match (collector to ... | Original |
6 pages, |
w2 smd transistor BFG425W BFG425W APPLICATION CMP230 CMP231 CMP250 CMP263 CMP264 CMP265 CMP286 CMP287 philips satellite systems 0805CS 0805CS Series RNR-T45-97-B-0584 RNR-T45-97-B-0584 abstract |
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| Abstract: BFG425W BFG425W Double Poly RF-transistor. The LNA is designed for a frequency f=900MHz, VSUP~3.8V, ISUP=10mA. , the new Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low noise , Designing the circuit: The circuit is designed to show the following performance: transistor: BFG425W BFG425W V , match (input to base) C2 27 pF 900 MHz short (L1 to ground) C3 27 pF 900 MHz short (L2 to ground) C4 100 nF RF decoupling collector bias C5 22 pF Output match (collector to output) C6 100 nF ... | Original |
6 pages, |
w2 smd transistor BFG425W CMP230 CMP231 CMP265 CMP286 CMP417 CMP418 0805CS L6 PHILIPS RNR-T45-96-B-1025 RNR-T45-96-B-1025 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| the LNA's first transistor input stage. Noise figure (NF) serves as a figure of merit for transistor (the Giacoleto model-see Figure 2 ) helps in understanding how this noise is generated. The . Figure 2. This detailed npn-transistor model (the Giacoleto model) simplifies the analysis of base resistance (Rbb´) in a transistor is Vn(f) = 4kTRbb´, where Vn(f) equals the voltage -biasing current, q is one electron charge (1.6 . 10 -19 coulombs), and b is the transistor's DC current gain www.datasheetarchive.com/files/maxim/0008/view_047.htm |
Maxim | 04/04/2001 | 22.14 Kb | HTM | view_047.htm |
| CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS .400 6LFL (M169) epoxy sealed . REFRACTORY/GOLD METALLIZATION . DOUBLE STEP INPUT/OUTPUT MATCH . 850-960 MHz CLASS AB LINEAR . COMMON ST | CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS SD1650 SD1650 SD1650 SD1650 characteristics. Double-section internal input/output matching re- sult in terminal impedance levels easily www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2842.htm |
STMicroelectronics | 20/10/2000 | 7.29 Kb | HTM | 2842.htm |
| RF & MICROWAVE TRANSISTORS .400 6LFL (M169) epoxy sealed . REFRACTORY/GOLD METALLIZATION . DOUBLE STEP INPUT/OUTPUT MATCH . 850-960 MHz CLASS AB LINEAR . COMMON EMITTER . P OUT = 60 W ST | CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS Datasheet CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS applications, the SD1650 SD1650 SD1650 SD1650 exhibits high collector efficiency with excellent thermal characteristics. Double www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2842-v3.htm |
STMicroelectronics | 25/05/2000 | 6.9 Kb | HTM | 2842-v3.htm |
| TRANSISTORS .400 6LFL (M169) epoxy sealed . REFRACTORY/GOLD METALLIZATION . DOUBLE STEP INPUT/OUTPUT MATCH ST | CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS SD1650 SD1650 SD1650 SD1650 CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2842 Date Update: 8/4/94 Pages: 5 The document is available in the following formats: Portable efficiency with excellent thermal characteristics. Double-section internal input/output matching re- sult in www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2842-v1.htm |
STMicroelectronics | 02/04/1999 | 5.09 Kb | HTM | 2842-v1.htm |
| TRANSISTORS .400 6LFL (M169) epoxy sealed . REFRACTORY/GOLD METALLIZATION . DOUBLE STEP INPUT/OUTPUT MATCH ST | CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS SD1650 SD1650 SD1650 SD1650 CELLULAR BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS Document Number: 2842 Date Update: 8/4/94 Pages: 5 The document is available in the following formats: Portable efficiency with excellent thermal characteristics. Double-section internal input/output matching re- sult in www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2842-v2.htm |
STMicroelectronics | 14/06/1999 | 5.05 Kb | HTM | 2842-v2.htm |
| replaceable. A variety of pH electrodes are available including double junction and . Separate temperature sensors embedded in each electrode match the response to . 9 VOLT BATTERY The DspH operates on a standard 9 V transistor battery. The easily stick pH double junction electrode w/ATC $85 www.datasheetarchive.com/files/omega/newport/products/envnmntl/pocktpal.htm |
Omega | 31/03/2000 | 26.39 Kb | HTM | pocktpal.htm |
| double-balanced active mixer based on the Gilbert cell that is capable of accepting RF inputs the LO rate and to achieve the desired double-balanced mixer characteristics. The uses a double-balanced Gilbert cell architecture with single-ended RF and LO inputs and transistors in the Gilbert cell to conduct, otherwise the desired switching action will increased, the simple bias scheme allows the transistors to turn on harder. The gain of the mixer www.datasheetarchive.com/files/maxim/0003/anjlq01.htm |
Maxim | 04/04/2001 | 34.11 Kb | HTM | anjlq01.htm |
| Name Conneted to CVss Clean Vss 50 ohm pulldown transistor in output driver DVss Dirty Vss 15 ohm pulldown transistor in output driver IVss Isolated Vss Vdd Non bus output driver pullup transistors GADVdd Global address dirty Vdd Global address bus pullup transistors GDDVdd Global address dirty Vdd Global data bus pullup transistors GADVdd Local address dirty Vdd Local address bus pullup transistors GDDVdd Local data www.datasheetarchive.com/files/texas-instruments/sc/docs/dsps/hotline/4xcom_13.htm |
Texas Instruments | 20/12/1996 | 12 Kb | HTM | 4xcom_13.htm |
| new family of pre-FET (field-effect transistor) drivers and power double-diffused metal oxide silicon match the load requirements. Usually, a single-chip solution is utilized in automotive www.datasheetarchive.com/files/texas-instruments/data/sc/docs/news/1996/96068a.htm |
Texas Instruments | 08/02/1999 | 7.18 Kb | HTM | 96068a.htm |
| new family of pre-FET (field-effect transistor) drivers and power double-diffused metal oxide silicon match the load requirements. Usually, a single-chip solution is utilized in automotive www.datasheetarchive.com/files/texas-instruments/sc/docs/news/1996/96068a.htm |
Texas Instruments | 18/11/1996 | 6.51 Kb | HTM | 96068a.htm |