NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
LP395Z/LFT1 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
LP395Z/LFT4 Texas Instruments Ultra Reliable Power Transistor 3-TO-92 ri Buy
TIP115 Texas Instruments PnP Darlington - Connected Silicon Power Transistors 3-TO-220 ri Buy

double match transistor

Catalog Datasheet Results Type PDF Document Tags
Abstract: /Inoren Part III Application Information and Technical Data Page Hybrid Couplers. Power Dividers. Input Match and Power Relationships 90° Hybrids For Transistor Power Amplifiers Effect of Hybrid Phase and Amplitude Balance on Amplifier Performance. Derivation of Output Expressions for 90° , Conversion. 95 Balanced & Double Balanced M ixers 95 Quadrature IF Mixers ... OCR Scan
datasheet

1 pages,
20.77 Kb

diplexer datasheet abstract
datasheet frame
Abstract: (dB) f=2GHz 1.5 1.3 1.3 IP3, using bypassing to improve it Figure 1: transistor Double , wideband technology. Philips' fifth generation die technology uses a double polysilicon process with a , double poly silicon wideband technology (see figure 1) uses a steep emitter doped profile resulting in , carriers with a small offset in frequency. Due to transistor nonlinearities, these two carriers generate , product C Out BFG4xx the base-emitter and collector-emitter voltages of a transistor used in an ... Original
datasheet

8 pages,
118.58 Kb

BFG403W 0805CS smd capacitor philips 0805 smd transistor W1 BFG410W BFG425 BFG520 Philips 0805 capacitors smd transistor w2 BFG425W APPLICATION 2 GHz LNA BFG425W schematic diagram induction heating KV96-157 KV96-157 abstract
datasheet frame
Abstract: • High performance, low power, CMOS double metal process • Single +5V (±10%) power supply • Easy memory expansion with CE and OE options • All inputs and outputs are TTL compatible • Fast match time , A7[ 3 22 ] A3 A8[ 4 21 ] A2 A9[ 5 20 ] Al A10[ 6 19 ] AO Al 1 [ 7 16 ] MATCH A12 [ a 17 ] DQ4 , 13 A4 A3 A2 Al AO MATCH ] DQ4 ] DQ3 ] DQ2 ] DQ1 DJB § GENERAL DESCRIPTION The Micron SRAM family employs high speed, low power CMOS designs using a 4-transistor memory cell. They are fabricated ... OCR Scan
datasheet

8 pages,
206.03 Kb

MT5C6405 micron sram MT5C6405T MT5C6405T abstract
datasheet frame
Abstract: performance, low power, CMOS double metal process · Single +5V (±10%) power supply · Easy memory expansion with CE and OE options · All inputs and outputs are TTL compatible · Fast match time: 15ns 16K X 4 , [ A13 [ CE[ A 2 A1 A0 MATCH -15 -20 -25 -30 -35 16 ] MATCH 17 ] DQ4 16 ] DQ3 15 ] DQ2 14 ] DQ! , employs high speed, low power CMOS designs using a 4-transistor memory cell. They are fabricated using double layer metal, double layer polysilicon technology. For flexibility in high speed memory ... OCR Scan
datasheet

8 pages,
372.85 Kb

MT5C6405T MT5C6405T abstract
datasheet frame
Abstract: product The BFG480W BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 BFG400 series. , Application information 2.4 GHz low noise amplifier with the BFG480W BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W BFG480W, it is possible to design Low Noise Amplifiers (LNAs) for high , Philips 0603 Philips k RF transistor collector to base bias R2 39 0603 Philips collector series bias; levelling hFE spread C1 5.6 pF 0603 Philips input match (base coupling ... Original
datasheet

5 pages,
23.71 Kb

TRANSISTOR noise figure measurements BFG400 0805CS transistor amplifier 3 ghz MGS629 BFG480W BFG480W abstract
datasheet frame
Abstract: example of a Low Noise Amplifier with the new BFG403W BFG403W Double Poly RF-transistor. The LNA is designed for , Introduction: With the new Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low , performance: transistor: BFG403W BFG403W Vce~0.9V, Ic ~1mA, VSUP~1.5V freq=900MHz Gain~16dB NF , Input match (input to base) C2 27 pF 900 MHz short (L1 to ground) C3 27 pF 900 MHz short (L2 to ground) C4 100 nF RF decoupling collector bias C5 1.2 pF Output match (collector to output) Coil_1 ... Original
datasheet

6 pages,
23.29 Kb

BFG403W amplifier 900mhz 0805CS 0805CS Series datasheet abstract
datasheet frame
Abstract: fifth generation BFG425W BFG425W and BFG410W BFG410W Double Poly RF-transistors. The BB142 BB142 is a new varactor specially , Introduction: With the new Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low , noise at 60 kHz , Negative impedance Negative impedance DC-filter RF-bypass RF-bypass match between VCO and buffer RF-feed/output match Output match/filter Bias Bias Bias Bias Bias Better RF-stability (K>1 ... Original
datasheet

6 pages,
54.98 Kb

TRANSISTOR noise figure measurements 1K 1608 2K 0402 BFG410W BFG425W APPLICATION tdk VCO 0402_PHILIPS BFG425W BB142 43p transistor datasheet abstract
datasheet frame
Abstract: Description of product BGA2003 BGA2003: RF transistor with internal bias circuit. Benefit is lower component count , supply. 1/20/00 1 Philips Semiconductors B.V. Abstract Philips' double poly fifth generation , transistor with integrated bias and control input. The application described here is specially intended as , decoupling Current setting RF-short to ground Input match, DC-decoupling Output match Output match see ... Original
datasheet

4 pages,
24.65 Kb

sot343r2 MLG1608 BGA2003 RNR-T45-98-B-0709 RNR-T45-98-B-0709 abstract
datasheet frame
Abstract: Transistor Output Model Freescale Semiconductor, Inc. Figure 9. Double Section Input Matching The , its advantages over a conventionally matched 800 MHz transistor. Also described will be the , power of current 800 MHz transistors does present a number of problems: larger transistor die would , in a RF transistor. This is to some degree offset by a larger die size but doubling the output power, assuming similar efficiency, will double the heat dissipation in the package. Making the ... Original
datasheet

9 pages,
300.7 Kb

uhf amplifier design Transistor TRANSISTOR D 1978 MRF898 Inside the RF Power Transistor AN1530 transistor j326 AN1530/D AN1530/D abstract
datasheet frame
Abstract: BFG425W BFG425W Double Poly RF-transistor. The LNA is designed for a frequency f=900MHz, VSUP~3.8V, ISUP=10mA. , the new Philips silicon bipolar double poly BFG400W BFG400W series, it is possible to design low noise , Designing the circuit: The circuit is designed to show the following performance: transistor: BFG425W BFG425W V , match (input to base) C2 27 pF 900 MHz short (L1 to ground) C3 27 pF 900 MHz short (L2 to ground) C4 100 nF RF decoupling collector bias C5 22 pF Output match (collector to output) C6 100 nF ... Original
datasheet

6 pages,
68.75 Kb

w2 smd transistor CMP203 CMP230 CMP231 CMP265 CMP286 CMP417 CMP418 0805CS L05 transistor smd transistor WW4 BFG400W BFG425W transistor smd Sb1 RNR-T45-96-B-1025 RNR-T45-96-B-1025 abstract
datasheet frame

Datasheet Content (non pdf)

Abstract Saved from Date Saved File Size Type Download
Over 1.1 million files (1986-2014): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer.
 
replaceable. A variety of pH electrodes are available including double junction and Separate temperature sensors embedded in each electrode match the response to standard 9 V transistor battery. The easily accessible battery compartment is separated pH double junction electrode w/ATC $85
www.datasheetarchive.com/files/omega/newport/products/envnmntl/pocktpal.htm
Omega 31/03/2000 26.39 Kb HTM pocktpal.htm
structure called a Gilbert cell. An emitter-coupled transistor pair is used to switch the current path pass, while the match on the IF port is low pass, so the isolation of the overall structure can be HMMC-3040 HMMC-3040 HMMC-3040 HMMC-3040 : 20-43 GHz double ba,anced mixer and LO amplifier Related Topics
www.datasheetarchive.com/files/agilent/hprfhelp/products/rfics/f_mix.htm
Agilent 23/11/1999 14.71 Kb HTM f_mix.htm
Binary to BCD converter Double speed synchronous communication Divide by 3,5,7 Increased timer resolution across serial interface Twice the data for the same amount of clock periods Double Speed Synchronous Serial 16 bit data System Clock Double Rate Data Isolation nLOAD / SHIFT 16 bit data Receive data valid tolerance determined by a couple of major factors: Gate Oxide thickness Transistor scale CoolRunner-II CPLDs termination scheme works Watch your trace length / impedance! Resistor should be chosen to match with diode
www.datasheetarchive.com/files/xilinx/files/cpld _modules/adv_features1.pps
Xilinx 30/01/2004 594.5 Kb PPS adv_features1.pps
CVss Clean Vss 50 ohm pulldown transistor in output driver DVss Dirty Vss 15 ohm pulldown transistor in output driver IVss Isolated Vss Isolated pre-driver buffer output impedance, should match the line impedance. If this condition is met the voltage going will be double Vin or the original driving voltage. In a real 'digital' world a little overshoot (not
www.datasheetarchive.com/files/texas-instruments/sc/docs/dsps/hotline/4xcom_13.htm
Texas Instruments 20/12/1996 12 Kb HTM 4xcom_13.htm
Shield (TRIOS). Double Molded Package Offers Isolation Test Voltage 5300 VAC RMS . Underwriters Lab File Voltage from Double Molded Package, 5300 VAC RMS . High Input Sensitivity I FT =2 mA, PF=1.0 I FT =5 from Double Molded Package 5300 VAC RMS . Small 6-Pin DIP Package. Underwriters Lab File #E52744 E52744 E52744 E52744. VDE /dt >10 KV/msec. Very Low Leakage Voltage from Double Molded Package 5300 VAC RMS. Package, 6-Pln DIP. Underwriters Lab File #E52744 E52744 E52744 E52744 96 K
www.datasheetarchive.com/files/infineon/products/37/375.htm
Infineon 26/11/1998 42.87 Kb HTM 375.htm
Shield (TRIOS). Double Molded Package Offers Isolation Test Voltage 5300 VAC RMS . Underwriters Lab File Voltage from Double Molded Package, 5300 VAC RMS . High Input Sensitivity I FT =2 mA, PF=1.0 I FT =5 from Double Molded Package 5300 VAC RMS . Small 6-Pin DIP Package. Underwriters Lab File #E52744 E52744 E52744 E52744. VDE /dt >10 KV/msec. Very Low Leakage Voltage from Double Molded Package 5300 VAC RMS. Package, 6-Pln DIP. Underwriters Lab File #E52744 E52744 E52744 E52744 96 K
www.datasheetarchive.com/files/siemens/products/37/375.htm
Siemens 28/02/1998 42.56 Kb HTM 375.htm
, LM2930A LM2930A LM2930A LM2930A and LM2931A LM2931A LM2931A LM2931A are configured with a PNP series-pass transistor as shown in figure 4. The PNP transistor is connected in the common emitter con- figuration and can therefore operate in saturation Pass Transistor in Com- mon Emitter Configuration for very Low Drop Out Voltage Regulators. Figure 5 : NPN Series Pass Transistor in Emitter Follower Configuration. CURRENT CONSUMPTION/QUIESCENT CUR- RENT on). The base current of the output transistor flows into the load. In the Figure 4 circuit, in
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1691-v1.htm
STMicroelectronics 02/04/1999 21.11 Kb HTM 1691-v1.htm
, LM2930A LM2930A LM2930A LM2930A and LM2931A LM2931A LM2931A LM2931A are configured with a PNP series-pass transistor as shown in figure 4. The PNP transistor is connected in the common emitter con- figuration and can therefore operate in saturation Figure 4 : PNP Series Pass Transistor in Com- mon Emitter Configuration for very Low Drop Out Voltage Regulators. Figure 5 : NPN Series Pass Transistor in Emitter Follower Configuration. of the regulator (voltage reference, op amp and so on). The base current of the output transistor
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1691-v3.htm
STMicroelectronics 25/05/2000 22.91 Kb HTM 1691-v3.htm
, LM2930A LM2930A LM2930A LM2930A and LM2931A LM2931A LM2931A LM2931A are configured with a PNP series-pass transistor as shown in figure 4. The PNP transistor is connected in the common emitter con- figuration and can therefore operate in saturation Pass Transistor in Com- mon Emitter Configuration for very Low Drop Out Voltage Regulators. Figure 5 : NPN Series Pass Transistor in Emitter Follower Configuration. CURRENT CONSUMPTION/QUIESCENT CUR- RENT on). The base current of the output transistor flows into the load. In the Figure 4 circuit, in
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1691-v2.htm
STMicroelectronics 14/06/1999 21.07 Kb HTM 1691-v2.htm
series-pass transistor as shown in figure 4. The PNP transistor is connected in the common emitter con- at 500mA. APPLICATION NOTE 2/9 Figure 4 : PNP Series Pass Transistor in Com- mon Emitter Configuration for very Low Drop Out Voltage Regulators. Figure 5 : NPN Series Pass Transistor in Emitter the output transistor flows into the load. In the Figure 4 circuit, in contrast, the base current of the output transistor does not flow through the load and, particularly in saturation, depends
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/1691.htm
STMicroelectronics 20/10/2000 23.59 Kb HTM 1691.htm