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double match transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: (dB) f=2GHz 1.5 1.3 1.3 IP3, using bypassing to improve it Figure 1: transistor Double , wideband technology. Philips' fifth generation die technology uses a double polysilicon process with a , double poly silicon wideband technology (see figure 1) uses a steep emitter doped profile resulting in , carriers with a small offset in frequency. Due to transistor nonlinearities, these two carriers generate , product C Out BFG4xx the base-emitter and collector-emitter voltages of a transistor used in an Philips Semiconductors
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BFG410W BFG425W 2F1 SMD Transistor 2F2 SMD Transistor w2 smd transistor TRANSISTOR SMD w2 schematic diagram induction heating KV96-157 BFG400W
Abstract: . Transistor Output Model Freescale Semiconductor, Inc. Figure 9. Double Section Input Matching The , its advantages over a conventionally matched 800 MHz transistor. Also described will be the , power of current 800 MHz transistors does present a number of problems: larger transistor die would , in a RF transistor. This is to some degree offset by a larger die size but doubling the output power, assuming similar efficiency, will double the heat dissipation in the package. Making the Motorola
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AN1530 transistor j326 Inside the RF Power Transistor MRF898 Nippon capacitors TRANSISTOR D 1978 AN1530/D
Abstract: features of a function. 3.2 Single Match, Double Transition The SingleMatchDoubleTransition , ] TBSA[1] Microengine TBSB[0] TBSB[1] Capture A Match B ucode ERWA Comparator TBSA , MRLE Set Microengine Capture B Match A ERA Bus TBSB[2] ucode MRLE PDCM Rst , ODIS ucode TBSA[2:0] Trans.B IPACB to branch PSTI Rst ucode MTD Match Recognition Match Recognition IPACA Match A Channel Flags TDLB to branch TDLB ucode IPACA Freescale Semiconductor
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AN2933 solenoid injector MLRB TBS-B
Abstract: example of a Low Noise Amplifier with the new BFG403W Double Poly RF-transistor. The LNA is designed for , . Introduction: With the new Philips silicon bipolar double poly BFG400W series, it is possible to design low , performance: transistor: BFG403W Vce~0.9V, Ic ~1mA, VSUP~1.5V freq=900MHz Gain~16dB NF , pF Input match (input to base) C2 27 pF 900 MHz short (L1 to ground) C3 27 pF 900 MHz short (L2 to ground) C4 100 nF RF decoupling collector bias C5 1.2 pF Output match (collector to Philips Semiconductors
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0805CS 0805CS Series amplifier 900mhz RNR-T45-97-B-006 900MH
Abstract: Philips double polysilicon wideband transistor BFG480W, it is possible to design Low Noise Amplifiers , product The BFG480W is one of the Philips double polysilicon wideband transistors of the BFG400 series , , COMMENT SOT343R Philips 0603 Philips k RF transistor collector to base bias R2 39 , match (base coupling) C2 3.3 pF 0603 Philips output match (collector coupling) C3 , PCB FR4 r 4.6, d = 0.5 mm Table 2 output match Dimensions of the micro striplines uS1 Philips Semiconductors
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MGS629 transistor amplifier 3 ghz philips circuit diagram TRANSISTOR noise figure measurements
Abstract: 35ns â'¢ High performance, low power, CMOS double metal process â'¢ Single +5V (±10%) power supply , '¢ Fast match time: 15ns OPTIONS â'¢ Timing 12ns access 15ns access 20ns access 25ns access 30ns access , ] Vcc A6[ 2 23 ] A4 A7[ 3 22 ] A3 A8[ 4 21 ] A2 A9[ 5 20 ] Al A10[ 6 19 ] AO Al 1 [ 7 16 ] MATCH , 17 9 16 IO 15 11 12 14 13 A4 A3 A2 Al AO MATCH ] DQ4 ] DQ3 ] DQ2 ] DQ1 DJB § GENERAL DESCRIPTION The Micron SRAM family employs high speed, low power CMOS designs using a 4-transistor memory -
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MT5C6405 micron sram MT5C6405T 24L/300 DJ-25T EC-35T
Abstract: performance, low power, CMOS double metal process · Single +5V (±10%) power supply · Easy memory expansion with CE and OE options · All inputs and outputs are TTL compatible · Fast match time: 15ns 16K X 4 , [ A13 [ CE[ A 2 A1 A0 MATCH -15 -20 -25 -30 -35 16 ] MATCH 17 ] DQ4 16 ] DQ3 15 ] DQ2 14 ] DQ , employs high speed, low power CMOS designs using a 4-transistor memory cell. They are fabricated using double layer metal, double layer polysilicon technology. For flexibility in high speed memory -
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Scans-053 28L/LCC
Abstract: Description of product BGA2003: RF transistor with internal bias circuit. Benefit is lower component count , supply. 1/20/00 1 Philips Semiconductors B.V. Abstract Philips' double poly fifth , high frequency transistor with integrated bias and control input. The application described here is , FR4 Comment Supply decoupling Current setting RF-short to ground Input match, DC-decoupling Output match Output match see figure below R ~ 4.6, H = 0.5 mm Stripline and via dimensions 1 Philips Components
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MLG1608 sot343r2 RNR-T45-98-B-0709 1998-O
Abstract: v v v Double superhet architecture for high degree of image rejection Easily extended to , preferred superheterodyne configuration is double conversion where MIX1 and MIX2 are driven by the internal , by the VCO2, which is mainly a bipolar transistor that can be configured as a varactor-tuned VCO , LC filter at IF1 and/or by low-crosstalk design). By configuring the TH7110 for double conversion and , input, approx. 1k single-ended VCO2 output, emitter of bipolar transistor VCO2 input, base of bipolar Melexis
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315/433MH LQFP44 315MH 433MH SFE10 SFECA10
Abstract: v v v Double superhet architecture for high degree of image rejection Easily extended to , RSSI-based demodulation The preferred superheterodyne configuration is double conversion where MIX1 and , be generated by the VCO2, which is mainly a bipolar transistor that can be configured as a , LC filter at IF1 and/or by low-crosstalk design). By configuring the TH7111 for double conversion and , bipolar transistor VCO2 input, base of bipolar transistor positive supply of general bias system and OA OA Melexis
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TH7010 868/915MH 868MH 915MH SFECV10
Abstract: example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for , Philips silicon bipolar double poly BFG400W series, it is possible to design low noise amplifiers for , . Designing the circuit: The circuit is designed to show the following performance: transistor: BFG425W Vce , improve IP3-performance Input match. 2GHz short. 2GHz short. RF-short Output match. To improve , low frequency decouple network at the base of the bipolar transistor (figure 1: R5 and C6). The Philips Semiconductors
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RNR-T45-96-B-773 BFG425 2 GHz LNA 100KH
Abstract: Buffer-Amplifier with the new BFG410W Double Poly RFtransistor. The buffer is designed for a frequency f , Philips silicon bipolar double poly BFG400W series, it is possible to design buffer-amplifiers for high , circuit: The circuit is designed to show the following performance (target): transistor: BFG410W Vce , . Input match. Output match. Better RF-stability (K>1). 2GHz short. RF-short Emitter induction Philips Semiconductors
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RNR-T45-97-B-375
Abstract: fifth generation BFG425W and BFG410W Double Poly RF-transistors. The BB142 is a new varactor specially , : With the new Philips silicon bipolar double poly BFG400W series, it is possible to design low phase , noise at 60 kHz , Negative impedance Negative impedance DC-filter RF-bypass RF-bypass match between VCO and buffer RF-feed/output match Output match/filter Bias Bias Bias Bias Bias Better RF-stability (K>1 Philips Semiconductors
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43p transistor 0402_PHILIPS tdk VCO BFG425W APPLICATION 2K 0402 1K 1608 RNR-45-98-B-0827 IS-95
Abstract: of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a , Semiconductors B.V. Introduction: With the new Philips silicon bipolar double poly BFG400W series, it is , following performance (target): transistor: BFG425W V SUP=3.6V, ISUP~30mA freq=2GHz Power Gain: ~15dB , Bias. DC-decoupling. Input match. Output match. 2GHz short. 2GHz short. RF Decoupling micro Philips Semiconductors
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RNR-T45-97-B-0787 transistor bipolar driver schematic 2Ghz amplifier b0787
Abstract: example of a Driver-Amplifier with the new BFG425W Double Poly RFtransistor. The driver is designed for a , new Philips silicon bipolar double poly BFG400W series, it is possible to design driver-amplifiers , ): transistor: BFG425W V SUP=3V, ISUP~10mA freq=900MHz Power Gain: >12dB VSWRi , 3.3 k 150 150 pF 150 pF 27 pF 1 nF (next table) Comment: Bias. Input match. Output match Philips Semiconductors
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RNR-T45-97-B-0686 Z048
Abstract: interface circuits. The close match in transistor parameters for devices fabricated on the same chip also , NPN Cell Transistor (2x) B All array cells and some peripheral components use double base/double , Material Copyrighted By Its Respective Manufacturer COMPONENT PERFORMANCE Transistor Performance , transistor. This device is called a lateral PNP because the emitter current flows sideways from the P emitter , Respective Manufacturer THE MACROCHIP Macrochip Components All Macrochips offer transistor and resistor -
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op amp 741 model PSpice pnp transistor 3609 pnp npn dual emitter connected plessey capacitor MM-10004 me 4946 492KQ 69X81 89X81 1080K 602858F PS2314
Abstract: micro­ power amplifiers to computer interface circuits. The close match in transistor parameters for , Pada Array Cell» Total Total Transistor* Restatane* Die Size (Mila) MMA 14 2 , OOllb'ifi T T-42-21 COMPONENT PERFORMANCE Transistor Performance Parameter Small NPN, 1X, 2X , Macrochips. This device is fabricated with the same process steps used for the NPN transistor. This device , â  T-42-21 THE MACROCHIP Macrochip Components All Macrochips offer transistor and resistor -
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Abstract: micro­ power amplifiers to computer interface circuits. The close match in transistor parameters for , COMPONENT PERFORMANCE Transistor Performance Small NPN, 1X, 2X Parameter Useful Current Range Current , Macrochips. This device is fabricated with the same process steps used for the NPN transistor. This device , temperature coefficient. 3 THE MACROCHIP Macrochip Components All Macrochips offer transistor and , available for circuit designers Small NPN Cell Transistor (2x) g ra H w le °i P e l -
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chip die npn transistor MM1007 69X56
Abstract: , one of the Philips double polysilicon wideband transistors of the BFG400W series. · Application area , Semiconductors 900 MHz low noise amplifier with the BFG480W INTRODUCTION With the Philips double polysilicon wideband transistor BFG480W, it is possible to design Low Noise Amplifiers (LNAs) for high frequency , k RF transistor collector to base bias R2 10 0603 Philips improvement RF , pF 0603 Philips input match (base coupling) C2 27 pF 0603 Philips output match Philips Semiconductors
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MGS731 MGS732 BP317
Abstract: example of a Low Noise Amplifier with the new BFG425W Double Poly RF-transistor. The LNA is designed for , Philips silicon bipolar double poly BFG400W series, it is possible to design low noise amplifiers for , . Designing the circuit: The circuit is designed to show the following performance (target): transistor , hFE spread C1 3.3 pF Input match (input to base) C2 8.2 pF 1.5GHz short (L1 to ground) C3 8.2 pF 1.5GHz short (L2 to ground) C4 1 nF RF decoupling collector bias C5 82 pF Output match Philips Semiconductors
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CMP409 CMP250 Philips npo 0805 5Ghz lna transistor datasheet CMP286 CMP287 philips satellite systems RNR-T45-97-B-0584 CMP408 CMP358 CMP394 CMP197 CMP18
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