NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| BAW56M | NXP Semiconductors | DIODE 0.15 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, Signal Diode | 
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| BAW56M,315 | NXP Semiconductors | DIODE 0.15 A, 90 V, 2 ELEMENT, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, Signal Diode |
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| BAT54CM,315 | NXP Semiconductors | DIODE 0.2 A, 2 ELEMENT, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, Signal Diode |
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| BAV70M | NXP Semiconductors | DIODE 0.75 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, Signal Diode |
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| BAV70M,315 | NXP Semiconductors | DIODE 0.75 A, 100 V, 2 ELEMENT, SILICON, SIGNAL DIODE, 1 X 0.60 MM, 0.50 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, SC-101, 3 PIN, Signal Diode |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: ) 1 per diode both diodes 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 , squire-wave pulse; = 0.5 ; Tmb 104 °C; both diodes conducting; see Figure 1; see Figure 2 - - 16 , ; Tmb 104 °C; both diodes conducting; see Figure 1; see Figure 2 - 16 A IFRM , junction to mounting base with heatsink compound; both diodes conducting; see Figure 3 - - ... | Original |
11 pages, |
BYQ30E BYQ30E-200/H BYQ30E-200 BYQ30E200 BYQ30E-200 abstract |
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| Abstract: polarity. CURRENT vs. VOLTAGE CHARACTERISTICS Current(A) EQUIVALENT CIRCUIT 2 Zener Diodes 10Â1 10Â2 , content Â18 Â14 Â10 Â6 Â2 2 Â10Â5 Â10Â4 Â10Â3 Â10Â2 Â10Â1 6 10 14 18 , FREQUENCY CHARACTERISTICS 10000 15pF 6.8pF 3.3pF 10Â1 V1mA:8V V1mA:12V 1000 30pF 10Â2 ... | Original |
11 pages, |
diodes 101 datasheet abstract |
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| Abstract: Absorption Coefficient (cm-1) The physics of silicon detector diodes 10-1 104 100 Si 103 101 102 102 101 103 100 0.4 94 8595 0.6 0.8 1.0 Penetration Depth (um) Silicon Photodiodes (PN and PIN Diodes) 105 104 1.2 Wavelength (nm) Fig. 8 - Absorption and , Infrared emitting diodes (IREDs) can be produced from a range of different III-V compounds. Unlike the , Similarly, phototransistors are also more sensitive. Finally, the frequency bandwidth of pin diodes is ... | Original |
8 pages, |
TSUS540 TSHF5410 TSHA550 TSFF5410 TSAL6200 detect radiation photodiode ge datasheet abstract |
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| Abstract: , dual) Bridge Superectifier® Sinterglass Avalanche Diodes IR Emitters and Detectors, and IR , Infrared Data Transceiver Modules Custom Products High-Power Diodes and Thyristors High-Power Fast-Recovery Diodes Phase-Control Thyristors Fast Thyristors Small-Signal Diodes Schottky and , Zener and Suppressor Diodes ICs Power ICs Analog Switches RF Transmitter and Receiver Modules ICs for Optoelectronics Modules Power Modules (contain power diodes, thyristors ... | Original |
557 pages, |
smd transistor 337 osram tube PPAP MANUAL vishay 0805 SMD resistors mttf BPW20 all led ligth project schematic diagram TEPT5700 TEMT6200FX01 BPw104 BPV11F* input id BPW41N PHOTO TRANSISTOR BPW77 APPLICATION NOTE BpW77 datasheet abstract |
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| Abstract: A E G-AKTIENGESELLSCHAFT 17E » 002^15 DGDT33S DGDT33S 7 MAEÛG Kleindioden Lower power diodes Diodes de , 2) 175 1 101 061 400 1200 1600 800 1400 100 6 /100 150 3 102 1) If - Ir -1 o mA 2) If = 10A, Ir- , Cathode =SP ♦ in * SJ5""1 I-*17-|j -62J5 -62J5 SI «â- l 100 Lawinendioden Controlled avalanche diodes Diodes à avalanche contrôlée Typ Type Vrrm Vbr Ifsm t=10ms *vj = •vjmax 'favkz tA= 45°C tyjmax G , Kathode 4 cathode 1 f h » t -a 25-- t A»'-5 1 --225 -- 101 L1L rT r 102 44 ... | OCR Scan |
1 pages, |
S1600 OA61 D2S 56 DGDT33S DGDT33S abstract |
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| Abstract: AEG CORP Kleindioden Lower power diodes Diodes de faible puissance 17E D 005145b 0001335 3 T-oi-ei Typ Type D 1,5/ D2S D3/ D3S 061 Vrrm 200 400 600 800 1000 100 200 400 800 200 400 600 , 150 0,5 MaGbild Outline Figure 98 100 100 101 102 1)lF-lR-10mA 2)lF = 10A,lR=»6A,-dlF/dt-15A , avalanche diodes Diodes à avalanche contrôlée Typ VflRM Vbr Ifsm 'faw Ivjmax G Maßbild Type t=10ms 'v , 150 3 102 Kathode cathode * 101 mm 102 44 ... | OCR Scan |
1 pages, |
OA61 datasheet abstract |
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| Abstract: POWER PIN DIODES WWW . Microsemi .C OM 102 THETA = 15 C/W MAX. 101 -UM7100 -UM7100 , UM7000 UM7000 / UM7100/UM7200 UM7100/UM7200 HIGH POWER PIN DIODES KEY FEATURES DESCRIPTION performance, for each , UM7000 UM7000 / UM7100/UM7200 UM7100/UM7200 HIGH POWER PIN DIODES ELECTRICAL PARAMETERS @ 25°C (unless otherwise specified , => 100 MHz ELECTRICALS ELECTRICALS 0 100 101 102 103 Vr (V) Copyright 2005 Rev. 0, 2005-09-08 Microsemi Page 2 UM7000 UM7000 / UM7100/UM7200 UM7100/UM7200 HIGH POWER PIN DIODES WWW . ... | Original |
11 pages, |
High Power PIN Diodes UM7000 UM7001 UM7002 UM7006 UM7010 UM7100 UM7101 UM7102 UM7200 UM7108 UM7100/UM7200 UM7000 abstract |
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| Abstract: MITSUBISHI LASER DIODES ML9XX11 ML9XX11 SERIES InGaAsP DFB LASER DIODES TYPE NAME ML925B11F ML925B11F , diodes emitting light beam around 1550nm. They are well suited for light source in long distance , 0.2 0.4 ns p SMSR Im tr,tf MITSUBISHI ELECTRIC MITSUBISHI LASER DIODES ML9XX11 ML9XX11 SERIES InGaAsP DFB-LASER DIODES OUTLINE DRAWINGS (Dimension:mm) 5.6 +0 -0.03 ML925B11F ML925B11F 4.25 3.55±0.1 (0.25) 2-90º (3) Case (0.25) (2) (4) 1±0.1 0.25±0.03 ... | Original |
4 pages, |
ML9XX11 ML925J11F ML925B11F ML920J11S InGaAsP 1550nm light emitting diode ML9XX11 abstract |
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| Abstract: s ' / CB 18 (CB 2) CB 89 Tungsten point contact germanium diodes assemblies Montages de diodes , ImA) max DRS 75 page SFAI 101 CB 18 Doubler Doubleur 50 , matched diodes Deux diodes appariées 50 30 1 7,5(3) 639 Gold bounded germanium diodes assemblies Montages de diodes au germanium à pointe d'or SF M 204 CB 18 Single phase bridge Pont monophase 15 , antichoc 50 1 50 543 Planar silicon diodes assemblies Montages de diodes pianar au silicium ESM ... | OCR Scan |
1 pages, |
silicon diode and germanium sf diode center tap diodes Germanium Germanium bridge rectifier bridge rectifier 206 pont germanium rectifier germanium diodes PONT DIODE germanium rectifier diode pont de diode datasheet abstract |
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| Abstract: PIN PIN PHOTO DIODES HP333 HP333 /I L /V F /I SC /E V A 0 VR=5V 200lX 15 Ta=25 103 300lX 500lX 30 45 Id Dark current ISC Short circuit current 101 400lX IL Light current nA 102 Ta=25 100lX 102 101 0 0.1 0.2 0.3 0.4 100 0.5V 100 10-1 1,000lX 60 75 /Id/Ta A 101 102 103 VF Forward voltage , 50 -80 Id Dark current 10-1 0 -6 80 60 100 Ta=25 -2 40 100 S ... | Original |
2 pages, |
HP333 HP333 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| SIGPIN &F Seite &P AF PIN Diodes 101.0 97.0 102.0 101.0 97.0 99.0 101.0 101.0 98.0 102.0 103.0 99 functions J 4.0 safety approval K 5.0 power dissipation max L M N 5.0 rated temperature max O 16.0 diode -rep peak forward current max AK AL 19.0 rep peak reverse voltage max AM 19.0 diode forward resistance AN AO specification AU 16.0 frequency band AV 16.0 diode technology AW 16.0 modulation method AX 16.0 nearest convential type AY 17.0 diode capacitance AZ BA BB BC BD BE 4.0 current max BF BG 16.0 forward current max BH www.datasheetarchive.com/download/77035153-169546ZC/sigpin.zip (d_sigpin.xls) |
Infineon | 07/09/2000 | 42.63 Kb | ZIP | sigpin.zip |
| SIGSCHOT &F Seite &P RF Schottky Diodes 101.0 97.0 102.0 101.0 97.0 99.0 101.0 101.0 98.0 102 temperature max O 16.0 diode application P 16.0 reverse current max Q R S T 16.0 reverse voltage max U V W 16 max AI AJ 18.0 non-rep peak forward current max AK AL 19.0 rep peak reverse voltage max AM 19.0 diode .0 CECC specification AU 16.0 frequency band AV 16.0 diode technology AW 16.0 modulation method AX 16.0 nearest convential type AY 17.0 diode capacitance BA BB BC BD BE 4.0 current max BF BG 16.0 forward www.datasheetarchive.com/download/45906812-169547ZC/sigschot.zip (d_sigsch.xls) |
Infineon | 07/09/2000 | 61.98 Kb | ZIP | sigschot.zip |
| SIGSWIT &F Seite &P Signal Diodes 101.0 97.0 102.0 101.0 97.0 99.0 101.0 101.0 98.0 102.0 103.0 99 functions J 4.0 safety approval K 5.0 power dissipation max L M N 5.0 rated temperature max O 16.0 diode -rep peak forward current max AK AL 19.0 rep peak reverse voltage max AM 19.0 diode forward resistance AO AP AU 16.0 frequency band AV 16.0 diode technology AW 16.0 modulation method AX 16.0 nearest convential type AY 17.0 diode capacitance BB BC BD BE 4.0 current max BF BG 16.0 forward current max BH 3 www.datasheetarchive.com/download/37991786-169548ZC/sigswit.zip (d_sigswi.xls) |
Infineon | 07/09/2000 | 64.12 Kb | ZIP | sigswit.zip |
| cur &F Seite &P FRED High-Speed Diodes 101.0 97.0 102.0 99.0 97.0 103.0 103.0 103.0 101.0 101 approval K 5.0 power dissipation max L M N 5.0 rated temperature max O 16.0 diode application P 16 -rep peak reverse power dis max AD AE AF 19.0 diode function AG 20.0 clamping voltage max AH AI AJ 17 band AN 16.0 diode technology AO 16.0 modulation method AP 16.0 nearest convential type AQ 17.0 diode .0 terminal pitch BP 66.0 shape/size code BSI BQ 16.0 diode package BR 52.0 number of terminals BS standard www.datasheetarchive.com/download/8331448-169527ZC/fredsip.zip (d_fredsi.xls) |
Infineon | 07/09/2000 | 24.71 Kb | ZIP | fredsip.zip |
| BAW101 - High voltage double diode BAW101S - High voltage double diode Product listing for High voltage switching diodes Products listing Product name PIP BAS19 BAS19 BAS19 BAS19 - General purpose diodes BAS20 BAS20 BAS20 BAS20 - General purpose diodes www.datasheetarchive.com/files/philips/catalog/listing/41748-v2.html |
Philips | 01/06/2005 | 6.28 Kb | HTML | 41748-v2.html |
| BAW101S_1 Product information page BAW101S; High voltage double diode General info The BAW101S is a high-speed switching diode array with two separate dice, fabricated : 300 V Electrically insulated diodes. Applications High voltage switching Publication releasedate Datsheet status Page count File size BAW101S High www.datasheetarchive.com/files/philips/pip/baw101s_1.html |
Philips | 06/06/2005 | 2.8 Kb | HTML | baw101s_1.html |
| * ; 300V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101S D ( IS=74.8n RS=0.288 BV=300 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) www.datasheetarchive.com/files/diodes-inc/spice-model/6178.mod |
Diodes, Inc. | 04/09/2012 | 0.17 Kb | MOD | 6178.mod |
| * ; 325V 0.250A 50.0ns DIODES Switching Diode .MODEL BAW101V D ( IS=74.8n RS=0.288 BV=325 IBV=150n + CJO=700f M=0.333 N=2.41 TT=72.0n ) www.datasheetarchive.com/files/diodes-inc/spice-model/6179.mod |
Diodes, Inc. | 04/09/2012 | 0.17 Kb | MOD | 6179.mod |
| BAW101_1 Product information page BAW101; High voltage double diode General info The BAW101 is a high-speed switching diode array with two separate dice, fabricated : 300 V Electrically insulated diodes. Applications High voltage switching Publication releasedate Datsheet status Page count File size BAW101 High www.datasheetarchive.com/files/philips/pip/baw101_1.html |
Philips | 06/06/2005 | 2.49 Kb | HTML | baw101_1.html |
| Product listing BAS19 BAS19 BAS19 BAS19 - General purpose diodes BAS20 BAS20 BAS20 BAS20 - General purpose diodes BAS21 BAS21 BAS21 BAS21 - General purpose diodes BAS221 BAS221 BAS221 BAS221 - General purpose diode BAS321 BAS321 BAS321 BAS321 - General purpose diode BAV100 BAV100 BAV100 BAV100 - General purpose diodes BAV101 - General purpose diodes BAV102 BAV102 BAV102 BAV102 - General purpose diodes BAV103 BAV103 BAV103 BAV103 - General purpose diodes BAV20 BAV20 BAV20 BAV20 - General purpose diodes BAV21 BAV21 BAV21 BAV21 - General purpose www.datasheetarchive.com/files/philips/catalog/listing/41748-v1.html |
Philips | 17/02/2002 | 4.4 Kb | HTML | 41748-v1.html |