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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode t85

Catalog Datasheet MFG & Type PDF Document Tags

diode t85

Abstract: 2N7805 DIODE TRANSISTOR CO INC 57 DF| HflMfiBSS OOGOCHB 7 | T'^-fcA GERMANIUM FNP HIGH POWER , T03 2N2146A T03 2N2834 T03 "X2N5438 T03 2N277 T036 X2N669 T03 2N2152 T85 2N2912 R74 2 N 5439 T03 2N278 T036 2N1011 T03 2N2152A T85 2 N4048 T036 '2N5440 T03 2N297A T03 2N1038 R122 2N2153 T85 2 N4049 T036 2N5887 T066 2N350 T03 2N1042 T6 2N2154 T85 2N4050 T036 2N5888 T066 2N351 T03 2N1073 T15 2N2155 T85 2N4051 T036 2N5889 T066 2N375 T03 2N1073A F15 2N2155A T85 2 N 4052 T036 2N5890 T066 2N376 T03
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2N2144A 2N1100 2N2157 2N4280 diode t85 2N7805 trf 510 transistor 32N03 transistor 45 f 122 t85 diode 2N58A 2N629 2N5436 2N143/13

FP-T85-660-1-C-F

Abstract: FLEXPOINT® Laser Modules for Operating Temperatures from -10°C to 85°C T85 Series The T85 series laser modules were specifically developed for higher operating temperatures. In addition to the incorporation of a special laser diode as well as a glass lens, the electronics were also particularly adjusted , 3959 5225, Fax: +33 1 3959 5350, info@lasercomponents.fr FLEXPOINT® T85 SERIES LASER MODULE ORDERING CODE FLEXPOINT T85 SERIES Series FP - T85 Wavelength (nm) - 660 Output Power
Laser Components
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FP-T85-660-1-C-F FP-T85-660-4

DIODE T25 4 io

Abstract: diode t85 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 0.5 1 1.5 2 Technical Note 2.0 Output V oltage (V ) 1.5 T=85 1.0 T=25 T=-40 T=85 T=25 T=-40 T=85 T=25 T=-40 0.5 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 , 0.3 0 0 200 400 Output Current (mA) 600 T=85 T=25 T=-40 T =-40 T=85 T=25 T=-40 Fig.4 Load , Voltage (V Output Voltage (V) 2 1.5 1 T=85 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Input Voltage (V) T , 0 0 0.5 1 1.5 2 Technical Note 2.81 2.8 2.79 T=85 T=25 T=-40 T=85 T=25 T=-40 2.5 3 3.5 4
ROHM
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DIODE T25 4 io DIODE T25 4 b1 BH30SA3WGUT 11020EAT10 VCSP60N1 R1120A

diode t85

Abstract: t85 diode International IO R Rectifier Fast Recovery Diodes \>£j Notes Fax on Demand Number Case Outline Key Port Number V * RM (V) I fAV@TC (A) (C) ·fsm 50 Hi 60Hi (A) (A) Vfm (V) R0)C(D£) (K/W) », (nS) Diode T70H FL100S05 T 8 5 H F L I0 S 0 2 T 8 5 H F L I0 S 0 5 T85 H FL20 S0 2 T 85 H FL20 S0 5 T S5H FL40S02 T85 H FL40 S0 5 T85 H FL60 S0 2 T85 H FL60 S0 5 T85 H FL80 S0 5 T 8 5 H FL100 S0 5 1000 ion i 00 200 200 400 400 600 600 800 1000 70 85 85 85 85 85 85 85 85 85 85 70
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1150I EL132-10S10 350QV

MV100

Abstract: BH18SA3WGUT 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 0.5 1 1.5 2 Technical Note 2.0 Output V oltage (V ) 1.5 T=85 1.0 T=25 T=-40 T=85 T=25 T=-40 T=85 T=25 T=-40 0.5 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 , 0.3 0 0 200 400 Output Current (mA) 600 T=85 T=25 T=-40 T =-40 T=85 T=25 T=-40 Fig.4 Load , Voltage (V Output Voltage (V) 2 1.5 1 T=85 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Input Voltage (V) T , 0 0 0.5 1 1.5 2 Technical Note 2.81 2.8 2.79 T=85 T=25 T=-40 T=85 T=25 T=-40 2.5 3 3.5 4
ROHM
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BH18SA3WGUT MV100 diode t40 EMP50
Abstract: 2 Technical Note 2.0 Output V oltage (V ) 1.5 T=85 1.0 T=25 T=-40 T=85 T=25 T=-40 T=85 , T=85 T=25 T=-40 T =-40 T=85 T=25 T=-40 Fig.4 Load Regulation Fig.5 IOUT - IGND Fig , 1 T=85 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Input Voltage (V) T=25 T=-40 2.77 0 1 2 3 4 5 Input , 2.81 2.8 2.79 T=85 T=25 T=-40 T=85 T=25 T=-40 2.5 3 3.5 4 4.5 5 5.5 Input Voltage (V) Fig , ) Gnd Current (uA) 2.82 2.81 2.8 2.79 2.78 2.77 2.76 2.75 0 50 100 150 Output Current (mA) T=85 T=25 T ROHM
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Abstract: 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0 0.5 1 1.5 2 Technical Note 2.0 Output V oltage (V ) 1.5 T=85 1.0 T=25 T=-40 T=85 T=25 T=-40 T=85 T=25 T=-40 0.5 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 , 0.3 0 0 200 400 Output Current (mA) 600 T=85 T=25 T=-40 T =-40 T=85 T=25 T=-40 Fig.4 Load , Voltage (V Output Voltage (V) 2 1.5 1 T=85 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 Input Voltage (V) T , 0 0 0.5 1 1.5 2 Technical Note 2.81 2.8 2.79 T=85 T=25 T=-40 T=85 T=25 T=-40 2.5 3 3.5 4 ROHM
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BH28SA3WGUT

FTR-F3PA012V

Abstract: F3PA012V (without bounce, no diode) Max. 10ms (without bounce, no diode) Min. 1,000MOhm at 500VDC 750VAC (50/60Hz , FTR-F3PA(.)V, FTR-F3AA(.)V 3A 30VDC, 5A 250VAC/30VDC T85 3/40A 250VAC, 5/40A 250VAC T85 FTR-F3PA(.)T, FTR-F3AA(.)T 3A 250VAC/30VDC, 5A 30VDC T85 3/51A 125VAC, 3/30A 250VAC T85 CSA C22.2 No. 14 LR 40304
Fujitsu
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FTR-F3PA012V F3PA012V t85 type 26 ftr-f3

NJW1110

Abstract: diode t85 ) High level ! Low level : In addition, Schottky barrier diode (SBD) influences a Low level at the , Voltage ICC vs Supply Voltage No signal, T=85,50,25,-20,-40oC 10 No signal 10 5 -40oC , Voltage [V] V =9V, THD=1%, I/O: INA1-1Aout 50 C 20 V+=9V, THD=1%,I/O: INA1-1Aout,T=85,50,25 , =1kHz, VOL=0dB, I/O: INA1-1Aout ,T=85,50,25,-20,-40oC V+=9V, Vin=1Vrms f=1kHz, I/O: INA1-1Aout, T=85,50 , :10-22kHz(f=100Hz), 400-30kHz(f=1kHz, 10kHz), I/O: INA1-1Aout, T=85,50,25,-20,-40oC 10 I/O: INA1
New Japan Radio
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NJW1110 NJW1110V SSOP32 INA13456789-1A
Abstract: level #21; High level : (b) High level #21; Low level : In addition, Schottky barrier diode (SBD , Voltage No signal, T=85,50,25,-20,-40oC 10 No signal 10 5 -40oC VREF[V] ICC [mA , Frequency V+=9V, THD=1%,I/O: INA1-1Aout,T=85,50,25,-20,-40oC + V =9V, THD=1%, I/O: INA1 , -1Aout ,T=85,50,25,-20,-40oC f=1kHz, I/O: INA1-1Aout, T=85,50,25,-20,-40oC V+=9V, Vin=1Vrms 4 8 , =100Hz), 400-30kHz(f=1kHz, 10kHz), I/O: INA1-1Aout, T=85,50,25,-20,-40oC I/O: INA1-1Aout, T=85,50,25,-20,-40oC New Japan Radio
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FTR-F3PA012V

Abstract: f3pa012v (without bounce, no diode) Max. 10ms (without bounce, no diode) Min. 1,000MOhm at 500VDC 750VAC (50/60Hz , 30VDC, 5A 250VAC/30VDC T85 3/40A 250VAC, 5/40A 250VAC T85 FTR-F3PA(.)T, FTR-F3AA(.)T 3A 250VAC/30VDC, 5A 30VDC T85 3/51A 125VAC, 3/30A 250VAC T85 CSA C22.2 No. 14 LR 40304 VDE IEC/EN61810
Fujitsu
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T85 marking FTR-F3P 250VA

250v 3 terminal voltage regulator

Abstract: t85 diode and/or humid environment, according to the optic quantities decrease of luminescent diode output , times rating 0.1A 250V AC 90446 - 90446 5 × 104 times rating 2A 250V AC (T85) - 5 × 104 times rating 0.1A 250V AC (T85) 9421091 - 415647 - 5 × 104 times rating 0.1A 250V AC (T85 , 250V AC 2A 30V DC 6168 104 times rating (T85) 5A 250V~ 9711097 9750138 104 times rating (T85) 5A 250V~ E35901 6 × 103 times rating 0.1A 30V DC 105 times rating 0.1A 30V DC
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AHF21 LR23413 250v 3 terminal voltage regulator 125V T105 enec t105 T105 switch 115 2a 250v hp 3101 pin AHF22 AHF23

2N7805

Abstract: gw 340 diode Material Copyrighted By Its Respective Manufacturer DIODE TRANSISTOR CO INC 2? DF| EflHfl352 D0G0DT3 7 , X2N669 T03 2N2152 T85 2N2912 R74 2 N 5439 T03 2N278 T036 2N1011 T03 2N2152A T85 2 N4048 T036 '2N5440 T03 2N297A T03 2N1038 R122 2N2153 T85 2 N4049 T036 2N5887 T066 2N350 T03 2N1042 T6 2N2154 T85 2N4050 T036 2N5888 T066 2N351 T03 2N1073 T15 2N2155 T85 2N4051 T036 2N5889 T066 2N375 T03 2N1073A F15 2N2155A T85 2 N 4052 T036 2N5890 T066 2N376 T03 2N1099 T036 2N2156 T85 2 N 4053 T036 2N5891 T066 2N379 T03
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gw 340 diode t03 package transistor pin configuration DTG2400 DTG-2400 2N126 2N1100 Power Transistor CY7C1339 100-MH 166-MH 133-MH 10IC/ TC20IAC

INCOMING RAW MATERIAL INSPECTION

Abstract: INCOMING RAW MATERIAL INSPECTION method Storage Life HTSL Transfer time , TS HUM PC HTSL LTSL OPL HTRB Switching Diode Schottky Diode Zener Diode Bipolar , junction-ambient o o TH=70 C/45min, TL=0 C/45min Transfer time
Diodes
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INCOMING RAW MATERIAL INSPECTION INCOMING RAW MATERIAL INSPECTION method JESD22-A102-B 101D 202F 208G QS-9000

CK005

Abstract: (no frost) 15ms (no bounce included) 5ms (no diode, no bounce included) 1,000MOhm at 500VDC Open , , 0700, 0860 16A, 250VAC, cosØ=1, T85 8/120A, 250VAC, T85 (NO) FTR-K1 SERIES FTR-K1-KS SERIES
Fujitsu
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CK005 000VAC UL1446 FTR-K1CK005T-KS K1CK005T-KS 440VAC 000VA

diode t87

Abstract: £ -i K /D io d es 1SS245 1S S 245 Silicon Epitaxial Planar High-Voltage Switching Diode â'¢ Dimensions (U n it: mm) 1) ra H U T' < -5 o fc 2) 3) /MS! (D O -3 5 )? * 3 0 t :-4AV(. 4) # 7 : * t W : ? * 3 0 â'¢ Features High dielectric strength. High reliability. Small size (DO-35). Glass seal. Type 1st Color Band 2nd Color Band 1SS245 Brite Blue â , JU ? b # Cond. 1 000 T-73 T-77 T-80 T-80A T-84 T-83 T-85 T-87 5
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diode t87

FTR-K1KS

Abstract: led diode partnumber ) Max. 5ms (no diode, without bounce) Resistance (initial) Min. 1,000MOhm at 500VDC Insulation , , 0631, 0700, 0860 16A, 277VAC resistive TV-8, 120VAC (NO) 16A, 250VAC, cos=1, T85 8/120A, 250VAC, T85 (NO) 3 FTR-K1 SERIES FTR-K1-KS SERIES n DIMENSIONS l Dimensions l PC board mounting
Fujitsu
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FTR-K1KS led diode partnumber RELAYS FUJITSU

diode t87

Abstract: t77 c.3 ROHM CO LTD K/Diodes 40E D TflaûTTT QODbSlS b IRHM 1S 1SS245 v i; â¡ > x t° $ 4 y T j i> 7° - -tm mm s. * < ? * > ? < - k Silicon Epitaxial Planar High-Voltage Switching Diode 1) ¡tiHEET'$>3o 2) 3)/JvS! (DO-35) T'&'So â'¢ Features 1) High dielectric strength. 2) High reliability. 3) Small size (DO-35). 4) Glass seal. â'¢ Applications High-voltage switching. fl-JFi\j"j£EI , -72 T-73 T-77 T-80 T-80A T-84 T-83 T-85 T-87 «a) 1 000 5 000 5 000 5 000 2 500 2 500 2 500 2 500 2
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SC-40 t77 c.3 DO-35 BLUE CATHODE ROHM 1SS245 diode T-77 diode COLOR BAND

QL5010

Abstract: QL5010S Ratings T=85,module T=50,module TVJ=45 t=10ms (50HZ),sine VR =0 TVJ=45 t=10ms (50HZ),sine 25 35 , =25 VR= VRRM TVJ=TVJM VR= VRRM IFM=45A TVJ=25 per diode;DC current Per module only for caculating
Greegoo Electric
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QL5010 QL5010S MT3516W MT3514W 50a rectifier circuit single phase bridge QL5010 50A, 1000V BRIDGE-RECTIFIER VRRM1000V 20PCS/ MT3506W

BL514

Abstract: T85 diode Transmission In 2nd and 3rd Optical Window Laser Diode with Multi-quantum Well Structure Suitable for Bit Rates , Bandwidth PIN Diode Hermetically Sealed Subcomponents, Similar to TO 18 With Single Mode Fiber Pigtail , . 26CPC Laser Diode Forward Current OFmax , (VRmax) . Monitor Diode Forward Current OFmax , Characteristics, All optical data refer to the optical port Parameter Laser Diode Optical Output Power S Bl51414x
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BL514 10-35* DIODE SBL51414G SBM51414G SBH51414G SBL/M/H51414 SBL/M/H5M14
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