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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358CDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4353IMS#TRPBF Linear Technology LTC4353 - Dual Low Voltage Ideal Diode Controller; Package: MSOP; Pins: 16; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4359HMS8#TRPBF Linear Technology LTC4359 - Ideal Diode Controller with Reverse Input Protection; Package: MSOP; Pins: 8; Temperature Range: -40°C to 125°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4364CDE-1#TRPBF Linear Technology LTC4364 - Surge Stopper with Ideal Diode; Package: DFN; Pins: 14; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4364CS-2#TRPBF Linear Technology LTC4364 - Surge Stopper with Ideal Diode; Package: SO; Pins: 16; Temperature Range: 0°C to 70°C visit Linear Technology - Now Part of Analog Devices Buy

diode t25 4 L0

Catalog Datasheet MFG & Type PDF Document Tags

DIODE T25 4 H5

Abstract: diode t25 4 L0 1200 SK 70 DH 12 1700 16C0 SK 70 DH 16 Symbol Conditions Values Units 'o T^-80 -C 63 A 'f SM 9 T^-25 "C; 10 ms 370 A T^ - 125 *C;10ms 280 A Pt T^-25 -C; 8.3 . 10 ms 686 A*$ T^- 125 -C; 8,3.10 ms 366 A*» VT T^-25 -C; 76A max 1,9 V VT(TO) V126 "ft 1 V t T^-126 -C 10 mil 'o:- 'rd V126'c:voo-WvR:>-vRay max. 10 mA V T^ - 25 -C; l0 - 1 A; di^'dt - 1 Afps 1 H5 V Vd-0.67VO3w 2 H5 (dv.'dtjç, T , T^-25 -C; d.c. min. 2 V â'¢or T^-25 -C; d.c. min. 100 mA voo T^ - 125 -C; d.c max. 0,26 V 'OD T
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DIODE T25 4 d0

Abstract: diode t25 4 L0 ,6 a Forward Transconductance g fs Id=2,5A Vds=25V 2,0 4,0 S Input Capacitance C 155 VDS=25V Vgs , L=100mH TC^-C 5,0 A Diode Forward On-Voltage V SD 1f=2XIdr VGS=0V Tch=25°C 0,95 1,45 V Reverse , ): 80ps pulse test Tc-25'C 40 £0 Drain-Source On-State Resistance Rum = *Ta); l0=2.5A Vos'lOV T . S 100 1S0 Typical Transfer Characteristics Id=1VgsI; act» pulse te&t; Vos=25V, T^=25*C 1 , r Typical Transconductance g*=f(l0); 80|js pulse test; Vos=25V; S2, 1 ê «D [Al Id [A] â'"Â
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diode t25 4 L0

Abstract: 2SK551 Driver (Dimensions in mm) (JEDEC TO-22QAB) ABSOLUTE MAXIMUM RATINGS (T.=25 °C) Item Symbol Rating , Current ÏOfmbe* 40 A Body-Drain Diode Reverse Drain Current lo. 10 A Channel Dissipation p,r 50 W , \ ELECTRICAL CHARACTERISTICS (T.=25 °C) SO 100 Cue Tonptruure 7c it) Item Symbol Test Condition min. typ , /i - 70 - ns Fall Time tf â'" 45 - ns Body-Drain Diode Forward Voltage Vo, I/=10A, VCJ=0 - 1.2 - V Body-Drain Diode /r=10A, VCJ=0 200 ns Reverse Recovery Time di,/dt=50A/ms â'¢Pulse Test
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BUK655-500A

Abstract: dlp afe 1000 N AMER PHILIPS/DISCRETE 2SE J> bbS3131 a020t.'i5 7 PowerMOS transistor Fast Recovery Diode , reversé diode, particularly suitable for motor control applications, eg. in full bridge configurations , on-state 1.3 1.5 1.7 a . resistance tâ'ž Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 = Gate 2 = Drain 3 = Source 4,5 max 1.3 0,9 max (3x) 2,54 2,54 5,9. min 15,8 max 0,6 2,4 3- Fig. 1 T0220AB; drain connected to mounting base. Notes 1
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BUK655-500A BUK655-500B BUK655-500C dlp afe 1000 S3131 T-37-/3 BUK655
Abstract: T25 IRF9540N Peak Diode Recovery dv/dt Test Circuit D.U.T* Circuit Layout Considerations â , 0 . 1 1 7 Q l0 = - 1 9 A Description Fifth Generation HEXFETs from International Rectifier , Diode Recovery dv/dt G > Operating Junction and Storage Temperature Range Soldering Temperature, for , -10V, Id = -11A ® 0.117 a â'" -4.0 v -2.0 Vds = Vgs. Id = -250pA Vqs = -50V, l0 = -11A 5.3 , - 20V nA -100 -VG = -20V S l0 =-11A 97 -S 15 nC VD = -80V -51 Vqs = -10V, See Fig -
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F1010 IRF1010 2BR9246

DIODE T25 4 ko

Abstract: diode t25 4 L0 '¢ Low On-Resistance Ros (on) S 0 Q45 Si. Vc 10 V, lD â'" 10 A 4 V, l0- 10 A ftDS (on) £ 0.065 Q, Vr,s â'¢ Capable of 4 V Gate Drive â'¢ Low Drive Current â'¢ High Speed Switching â'¢ High Density , Impulse»' 40 A Cody Drain Diode I IMI 10 A Reverse Drain Current Channel Dissipation Pch(Tc = 25t}" 28 W Channel Dissipation Pel." 4 w Channel Temperature Tch 150 "c Storage Temperature Tstg â ,  95 - IIS Turn-off Delay Time tdu>ffi Ri =3iJ - 300 - ns Fall Time tf - ]70 - lis Ko
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4AK17 2SK972 2SK1095 SP-10 DIODE T25 4 ko diode t25 4 L0

BUK100-50GS

Abstract: T0220AB ^£25 "C; VIS = 10 V - 60 A Po Total power dissipation T^.^25 -C - 40 W T$lg Storage temperature - -55 , clamping energy VIS = 0V T^S2S -C; Idm=15A; VDD < 20 V; inductive load Tmt> , protection circuits are functional. 4 The device is able to sefl-protect against a short circuit load , voltage Ve = 0 V; l0= 10 mA 50 - - V v(cl)dss loss 'oss Idss Drain-source clamping voltage Zero input , MOSFET 1.0 11 2.5 13 4 5.0 mA V kii 1 The short circuit load protection is able to save the device
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BUK100-50GS 00303M7 00303S4 WIIS25
Abstract: vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage ^ , Drain Qarreit [A] V æ , haracteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 'C) Continuous Drain Current (1^=100 'C , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (t= 2 5 "c) Linear Derating Factor , ±30 314 2.8 4 2.0 40 0.32 -5 5 to +150 Units V A A V mJ A mJ V/ns W PD W/'C c 300 , =0V,lD =250nA l0=250^A Vgs=30V V gs=-30V V ds=800V V ds=640V,Tc=1 25'C V gs=10V,Id=0.85A V ds=50V,Io -
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SSS4N80AS

diode t25 4 L0

Abstract: BUK655-500 10 100 1000 VDS/V Fig.4. Safe operating area. T^ = 25 'C l0 & Iqm = f(Vos); Iqm single pulse , \ \ / \ / \ ( \ 4 e IO/A 10 Fig.9. Typical transconductance, T-25 'C. 9fs = f(lo); conditions: Vos = 25 V RDS(ON , N AMER PHILIPS/DISCRETE 2SE » bbS3131 Q020t.'i5 7 PowerMOS transistor Fast Recovery Diode FET , mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reversé diode , resistance tâ'ž Diode reverse recovery time 250 250 250 ns Dimensions in mm Net Mass: 2g Pinning: 1 =
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BUK655-500 1c7s T0220 1E-01 IE-03
Abstract: , Gate-Scuroe \fc»ltage f\*3 Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Vottage , (Max ) @ Vos*400V Low Rqs(on) : 0.162 £2 (Typ.) S S H 2 5 N 4 0 A BV0SS = 400 V R ow , Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation , VG S =0V,VD S =25V,f =1MHz See Fig 5 VD D =200V. Id=25A, Re*5.3Û See Fig 13 VO S =320V, VG S =10V, l0=25A See Fig C & Fig 12 ® © ® © Source-Drain Diode Ratings and Characteristics Symbol Is Ism VS d % Qr -
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SSH25N40A SSH25BH0A
Abstract: (Max.) @ VD S = 800V Low R0S(0n> : 3.400 ft (Typ.) SSS4N80A BVdss = 800 V ^DS(on) = 4 .0 Î2 , Characteristic Drain-to-Source Voltage Continuous Drain Current (T^=25 c) Continuous Drain Current (Tc=100 c , Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (1^=25 'C) Linear Derating Factor , for 5-seconds © © 0 @ O Value 800 2.5 1.6 16 Ì 30 250 2.5 4 2.0 40 0.32 -5 5 to +150 Units V A A , VG S =0V,VD S =25V,f =1MHz pF See Fig 5 Voo=400V, l0=2A, ns Rg=16 i i See Fig 13 V ds=640V,Vgs -
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STH7NA80FI

Abstract: STH7NA80 T25 °c V0S = 15V OS(on) (0) 0 12 3 4 lp(a) Gate , uos _ DIODE 4- FAST G M-! X â² DIODE ; L=100^H âº8 1-»8 98 o 0 kl o.u.r. asn i 3.3 1000 , TRANSISTOR TYPE Vdss RoS(on) Id STH7NA80 STH7NA80FI 800 V 800 V < 1.9 n < 1.9 n 6.5 A 4 A . TYPICAL RDS(op , 20 kft) 800 V Vgs Gate-source Voltage ± 30 V Id Drain Current (continuous) at T0 = 25 °C 6.5 4 A Id Drain Current (continuous) at Tc = 100 °C 4 2.5 A Idm(») Drain Current (pulsed) 26 26 A
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ISOWATT218 STH7NA80/FI SC05970 EDD11

ISO 8015

Abstract: KF 520 JJL4 2.7 > Maximum Ratings and Characteristics 'L=0,277mH, Vcc=12V > Equivalent Circuit Item Symbol , Avalanche Capability 1 AV L = 100pH Tch=25°C 50 A Diode Forward On-Voltage V SD If=2xIdr Vgs=0V Tch , ; Tc-25'C Typical Forward Transconductance vs. ID !K=f(b); «Ops pulse test Voe=25V; T^=25*C nf Gate Threshold Voltage vs. Ta, VowrUT»); lo=1mA: Vos=Vrj r+f I 1 1 ; 4- rr+ . till trri- â  ""T! tf-l fifr â iiji 1 rn m»cT . 4{M -1 H- â â flft rt m
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2SK2688-01 US50A ISO 8015 KF 520

DIODE T25 4 Jo

Abstract: cd photo diode No. 1 2 3 4 5 6 7 8 Function TE cooler, negative T herm istor lead 1 T herm istor lead 2 Laser diode , SONY SLD322XT Package O utline Unit : mm High Pow er Density 0.5 W Laser Diode D escription The SLD 322X T is a high power, gain-guided laser diode produced by M O C VD m e th o d "1 . C om pared lo the SLD 300 Series, Ihis laser diode has a high brightness output with a doubted optical density which can be achieved by Q W -S C H stru ctu re "'. Tem perature of laser diode is controlled by
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DIODE T25 4 Jo cd photo diode
Abstract: speed 8MHz Latched data outputs CMOS compatible inputs Forward and reverse shifting options Diode to VP , package. 4. For operation above 25°C ambient, derate linearly to 70°C at 12mW/°C. 1. -0.5V to +16V , Current Leakage, any input l,L Current Leakage, any input HV Output Clamp Diode Voltage HV Output when , GND V dd = V dd max, fCLK = 8 MHz l0 = 100|iA l0 = 100|iA V|N = VD D V,N = 0 l0L = -100mA l0H = -20mA , ground. 2. Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4. Apply VPP -
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HV5308DJ HV5408DJ HV5308PJ HV5408PJ HV5308PG HV5408PG
Abstract: Forward and reverse shifting options â¡ Diode to VP allows efficient power recovery P These , total power dissipated in the package. 4. For operation above 25°C ambient, derate linearly to 70 , Register Output Voltage 1 l|H l|L V l0 = 100|jA V l0 = 100|oA Current Leakage, any , o HV Output Clamp Diode Voltage X I o o o > > > HV Output when Sourcing < o r â , . Apply VDD. 3. Set all inputs (Data, CLK, Enable, etc.) to a known state. 4. Apply VPP. Power-down -
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MIL-STD-883 HV5308X RBHV5308DJ HV5408X RBHV5408DJ HV53/HV54

6045h

Abstract: / APT5545HN MIN 600 Volts 550 16.5 Amps 15.5 0.40 Ohms 0.45 250 1000 ±100 2 4 nA TYP MAX UNIT b v , .]@25°C RG-1 .8 ß SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol *S Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current © (Body Diode) APT6040HN / APT5540HN , 334 5 668 10 Volts ns nc Amps UNIT *SM VSD »rr Q rr Diode Forward Voltage © (VQS = 0V, ls » -lD , 1 CC LU Q_ 16 ' g s 6V - c o T25 VDg, DRAIN-TO-SOURCE VOLTAGE (VOLTS) HGURE 3
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6045h APT6045HN APT5545HN550V15 5540HN 6040HN 554SHN 6045HN

diode t25 4 d7

Abstract: diode clamps to Vcc and ground. )6365 7 " ~ D j . ¿à?/- * / · Can perform as: Boolean , High-Drive-Current outputs: ( I o l = 2 4 mA ® V o l =0.5V) for direct bus interface · Inputs and outputs interface directly with TTL, NMOS and CMOS devices · Wide Qperating voltage range: 4.SV to 5.5V · Characterized for operation over industrial and military temperature ranges: . KS74HCTLS: - 4 0 ° C to + 85°C KS54HCTLS: - 5 5 , D5 D6 D7 W H DO D1 D2 D3 D4 D5 06 D7 PIN CONFIGURATION 03 C D2C 1 2 3 4 5 6 7 ; 16 15 14 13 12 11
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diode t25 4 d7 S4/74LS 90-XO

9010J

Abstract: CE-300 - 1 6 mA VOL VOL ·oh 0.1 (S0.4) V o d VI, V lp«16m A. Vc c * 4.5 V I0 »1.1 m A l0 = 2.4m A , ission rate and a high isolation resistance. They have a G a A IA s infrared emitting diode, optically co , not allow ed to ex cee d the maximum perm issible reference voltages. 016 (41 ).^ , \rn- 100(2 &4 , n mA Peak Forward , % tSlOO ms Delay Time (If =16 m A , Vc c =5 V, TA=25°C) High - Low SFH6135 (Rl =4. 1 kO) SFH6136 (Rl =
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SFH613 9010J CE-300 CE700 H6136 SFH6135/6136
Abstract: Diode Current DC Output Diode Current DC Output Source Sink Current Per Output Pin l0 K lo Icc , M54HC155 M74HC155 SGS-THOMSON m DUAL 2 TO 4 LINE DECODER 3 TO 8 LINE DECODER HIGHSPEED tpD = 12 ns (TYP.) AT Vcc = 5 V LOW POWER DISSIPATION Ice = 4 nA (MAX.) AT TA = 25 °C HIGH NOISE , IMPEDANCE | Ioh | = Iol = 4 mA (MIN.) BALANCED PROPAGATION DELAYS tP L H = tP H L WIDE OPERATING , dual 1-TO-4 line demultiplexers with indi­ vidual strobe inputs (1G and 2G), individual data in -
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54/74LS155 M54HC155F1 M74HC155M1 M74HC155B1R M74HC155C1R M54/74HC155
Abstract: m itte rC a th o d e 90 85 M ax 4 5 0 M a x. 5 0 0 04 0 M a x. V -T 1 -I- i 8 2 7.7 E , y Ì A T D e te c to r a 4 * LD ¿ í y .1. i J. T ¿ [ Í2) [D FEATURES · , m c a s e b o tto m ), (T c ) ^ * = 1 0 s 4 0 " to + 6 0 " C 40 to + 75 'C 2 6 0 "C /m in Laser Diode D ire c t F o rw a rd C u rre n t (IF u a x , Monitoring Diode R e v e rs e V o lta g e (V R UAX) 20 V PIN Diode R e v e rs e V o lta g e (V H MAX -
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Marking Code m sc70-6

Abstract: jedec SC-70-6 package Components Leader Tape 500mm minimum or 125 empty pockets July 1999, Rev. C m 3HbIìti7l4 Q0fc»2öö4 T25 , continuous, 0.65 A peak. Rdsiom, = 4 à @ VGS= 4.5 V, RDS(ON) = 5 Ã2 ( ! Vâ'žs= 2.7 V. Very low level , . m SC70-6 m S.p."i>OI " I! SO-8 SOT-223 SC70-6 The pinouts are symmetrical; pin 1 and 4 are , VGS = 0V, lD= 250 pA 25 V ABV^ATj Breakdown Voltage Temp. Coefficient l0 = 250 pA, Referenced to , 4.5V, Id = 0.22 A 2.6 4 £2 Tj =125°C 5.3 7 VGS = 2.7V, Id = 0.19A 3.7 5 'â¡(ON
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Marking Code m sc70-6 jedec SC-70-6 package SPI SC70-6 Marking Code m sc70-6 25 fdg6301n bb sc70-6 FDG6301N MIL-STD-883D RS-481 SC-70

4p1c

Abstract: samsung nand derating SAMSUNG SEMICONDUCTOR INC DE D e ( 7 ^ 4 1 4 2 DDDbEBS 5 | - T ~ < / < Z 'J 7 FEATURES · , High-Drive-Current outputs: ( I o l -2 4 mA @ Vol =0.SV) for direct bus Interface · Inputs and outputs interface , operation over industrial and military temperature ranges: KS74AHCT: -4 0 °C to +85°C KS54AHCT: -5 5 °C to , outputs are protected from damage due to static discharge by internal diode clamps to Vcc and ground , 19 P=Q 18 j Q 7 17 J P 7 16 3 0 6 15 3 P 6 14 I]Q 5 13 > 5 12 1 TM 11 ] P 4 OUTPUTS G2 X L X X H
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4p1c samsung nand derating 74ALS

74LS75

Abstract: 74 54 74 5 4 ,7 4 54 74 I MIN 4.5 4.75 -5 5 0 TYP 5.0 5.0 25 25 MAX 5.5 6.25 T25 70 - 0 , Q output until the Enable is perm itted to go HIGH. The S N 54 L S /7 4 L S 75 features com plem entary Q and Q output from a 4 -b it latch and in a v a ila b le in th e 16 -pin packages. For higher com ponent density applications the S N 54LS /74LS 77 4 -b it latch is available in the 14 -pin package w ith Q outputs omitted. 4-BIT D LATCH LOW POWER SCHOTTKY LO A D IN G (Note a) PIN N A M E S O1 - D
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74LS75 SN54LS/74LS75 SN54LS/74LS77
Abstract: Input Diode Current (l,K) V, < -0.5V Source Current (JEDEC Method 17) -20 mA V, > Vcc + 0.5V , -0.5V to Vcc +0.5V DC Output Diode Current (lOK) VQ < -0.5V -2 0 mA V0 Vcc + 0.5V +20 mA , Output Source or Sink Current (l0) ±500 mA 0V -V cc Output Voltage (VD) 0V -V Cc Operating Temperature (TA) ±12.5 mA -4 0 â'˜C to +85â'˜C Input Rise and Fall Time (tr/tf) DC , High Level Input Voltage 4 .5 -5 .5 V,L Low Level Input Voltage High Level Output Voltage -
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NC7ST86 MM74HCT NC7ST86M5 MA05B NC7ST86M5X US0121
Abstract: Leadforms â'¢ Also Available in Surface Mount D2PAK Package Pin 1. 2. 3. 4. 5. Voltage Feedback , Hz) Output Voltage Swing V High State (Isource = 75 VFB = 4 5 v ) Low State (Isink = 0-4 mA , TA, AMBIENT TEMPERATURE (°C) 100 125 Figure 4. Error Amp Output Saturation versus Sink , Pin 4 = Vcc Pin. 2,5 Open â'" Ta +25°C I 0 TA, AMBIENT TEMPERATURE (°C) b3Li72 , SUPPLY VOLTAGE (V) 40 T25 â  MOTOROLA ANALOG 1C DEVICE DATA MC34166 MC33166 Figure 13 -
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C34166 C33166 1N5822 I7225

SG7915 TO-3

Abstract: t25-4-10 j = 25°C V * .- 1 4 .5 V to-27V Power Pkgs: l0 = 5mA to 1,0A, P < 20W T - Pkg: l0 = 5mA Jo 500mA, P , 5mA SG7912A SG7912 Min. Typ. Max. Min. Typ. Max. -11.8 -12.Ö -1 Z 2 -11.5 -12.0 -t2»5 4 10 60 120 3 3 , 100 125 150 (°C ) 175 0 200 *0 0 600 800 1000 1200 1400 1600 (m A ) -6 0 -4 0 -2 0 0 20 ¿0 60 8 0 100 1 2 0 1 4 0 (°C ) AMBIENT TEMPERATURE - OUTPUT , VS V*. FIGURE 4 SHORTCIRCUIT CURRENT VS V1 M FIGURE 6 SHORT CIRCUIT CURRENT VS V.w 0 1
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SG7915 TO-3 t25-4-10 DIODE T25-4 SG7900A/SG7900AC SG7900/SG7900C SG7900A MIL-M38510/11501BXA JAN7905T MIL-M38510/11505BYA

VDE011

Abstract: 6343 opto GaAIAs infrared em itting diode, optically coupled with an integrated photodetector and a high speed , C learance. ¿4 mm , mA T a =25°C V Iq = 3 0 mA lp=16 mA. VCc = 4 5 V 0.15 0.5 Iq=2.4 mA T a =25°C ma , KQ Fig- Note JiS SFH6316 SFH6343 0 25 0 .8 10 T a =25°C Rl = 1 9 KQ i 4. 5 , =25°C R l =4.1 KQ 4, 5 SFH6316 SFH6343 0.5 0.8 1.0 T a =25°C Rl = 1.9 KQ C om m on M
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VDE011 6343 opto SFH6315-- HCPL0S00 SFH6316-- HCPL0501 SFH6343-- HCPL0453
Abstract: 02) 'm >T l E m itte r £ J (G N D ) .390 (9.91) .030 ( 0 .7 6 ) , .0 4 5 (1 .1 4 T .300 (7.62). -.031 (0.79) 4 ° ty p * 130 (3.30) 150 (3.81) D e s c rip tio n The SFH6325/6326 are dual channel optocouplers with a G aAIAs infrared em itting diode, o p ti­ cally coupled , o lta g e . 4.5 V Continuous Forward C u rre n t.25 , s TA=25°C t .230(5.8 4) 110 (2.79) .250(6.3 5) .130 (3.30) I u _ Parameter -
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SFH6325/6 E52744 6325/S SFH6326
Abstract: n t fo r H C P L 4 50 3 â'¢ High S p eed O p to c o u p ie r w ith o u t B ase C o n n e ctio n â , a t V CM= 1500 V â'¢ In su latio n T est Voltage: 5300 VACPK â'¢ /& K V D E 0 8 8 4 A v ailab le w ith O p tio n 1 â'¢ UL A p p ro val, File # E 5 2 7 4 4 A P P L IC A T IO N S â'¢ Data C o m m u n , 63 45 is an o p to co u p ie r w ith a G aA IA s infrared em ittin g diode, o p tica lly co u p le d , . 3 V DC Forw ard C u r re n -
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SFH6345
Abstract: to +t25 °C MAX MIN MAX UNIT Th Hold time D to CP 5 5 5 -4 -3 -2 5 5 5 ns 2.7 , AMERICA 74LV4094 N 74LV4094 D PKG. DWG. # SOT38-4 SOT109-1 PIN CONFIGURATION PIN DESCRIPTION PIN NUMBER 1 2 3 4, 5, 6, 7, 14, 13, 12, 11 8 9, 10 15 16 SYMBOL STR D CP QPo to QP7 FUNCTION Strobe , SYMBOL (IEEE/IEC) C2 CP STR O Si QS2 QPo QPi OP2 - 9 SRG8 - 10 - 4 - 5 - 6 - 7 7 qp4 EN3 > 01/ 10 JZ 2D 3 c 4 5 6 2 - 0 qp3 - 14 -
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74HC/HCT4094

OPA27E2

Abstract: hydrophone transducer | ±15 ±4 l0 = OmADC 3 ±22 ±15 ±4 3 ±22 ±15 ±4 3.3 ±22 VDC VDC mA | 4.7 4.7 5.7 -5 5 -2 5 +125 +85 -5 5 -2 5 +125 +85 -5 5 -4 0 +125 +85 +125 +85 °C °C °c °c °c , V1000 Planar Tunnel Diode 200ÌÌ 4 r ~~~ T 1 T -r ; 200Q 500pF FIGURE 19. RF Detector , 0.4 0 .6 ±6 ±12 ±100 ± 0 .2 0 .2 1 100 ±10 ±Vcc« 4 to 1 8 V ±VC C= 4 to 18V , * +5 OPA27, G * +1 OPA37, G * +5 5 45 8 63 5 45 8 63 5») 4 5 «I 8 63 MHz
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OPA27E2 hydrophone transducer OPA27F2 OPA27B2 THERMOPILE DETECTOR edo 6166 transducer OP-07 OP-05 AD510 AD517 OPA27/37 OP-27/OP-37

LT10541

Abstract: LT10S4 using bipolar switches. 4-30 SSlflMbfl 0 0 1 0 D 4 3 T25 XT LT1054 pm FuncTions OSC , 0 4 D 21b 4-27 LT1054 lCTRIC fll CHRRRCTCRISTICS PARAMETER Supply Current CONDITIONS load , 3.5V V in = 15V = Cout = 100pF Tantalum (Note 3) Iout = 10mA I out = 100mA = 10mA to 100mA (Note 4 , u t ), Note 4: Output resistance is defined as the slope of the curve, ( a V o u t vs for output , i/ERTER CONF GUR ATIC N C0UT=100 m F t a n t a l u m fosc = 25kHz l0 n = OmA 70 80 90 100
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LT10541 LT10S4 LTC1044/LTC7660 1N400

TA8435

Abstract: toshiba ta8435h tO *2 *3 *4 *5 t7 t8 tg ti0 tn ti2 ti3 ti4 ti5 tig tiy ti8 tig t2Q t2i t22 t23 t24 t25 t26 t27 t28 , shottky diode is connected between Output pin and GND): P = VCC x ICC + VM x IM + l0 (t0N x VSAT-U + , FUNCTIONAL DESCRIPTION 1 SG Signal GND. 2 RESET L : RESET. 3 ENABLE L : ENABLE, H : OFF. 4 ose Chopping , supply terminal. 25 NC No connection. 1999-08-05 4/25 TOSHIBA TA8435H OUTPUT CIRCUIT DECODER 'REF , . TYP. MAX. UNIT Output Saturation Voltage Upper Side VSAT U1 4 l0UT - 1-5A â'" 2.1 2.8 V Lower
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TA8435 toshiba ta8435h DIODE T28 HZIP25-P-1.27 diode w1 3GWJ42 HZIP25-P HZIP25-P-1 980910EBA1 76TYP 2-575TYP 36-5MAX

buk100-30gs

Abstract: BUK100-50GS on-state drain current T.^25 'C; V|S = 10 V - 60 A Pd Total power dissipation Tmb , clamping energy VIS = 0V Tmb£25 'C;IDM= 15 A; VDD < 20 V; inductive load TmbS95 *C; lDM = 4 A; VDD < 20 V , circuits are functional. 4 The device is able to self-protect against a short circuit load providing the , power MOSFET - 4 - k£2 1 The short circuit load protection is able to save the device providing the , minimum l0 ensures this condition. 3 The input voltage below which the overload protection circuits will
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buk100-30gs

SK 18751

Abstract: ALC269 P1 Trace Length Limit - L0 Point-to-Point with parallel termination Ground 55 +/- 15% Inner Layer : 4 , ANPEC LR CN24 1 2 3 D55 DIODE ZENER GLZ6.2B 6.2V 20mA MINI-MELF 2PIN PSI LR C496 14 2 35 4 5 5VDDM , 5 4 3 2 1 D First International Computer,Inc Portable Computer Group HW , : 0.1 D 1. Schematic Page Description : 2. PCI & IRQ & DMA Description : 3. Block Diagram : 4. Nat , LAN Circuit check by: A A Audio Circuit check by: Title Size C Date: 5 4 3 2 First
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SK 18751 ALC269 RR0510S-80R6-FN TRANSISTOR SMD K27 FIC CW0A0 smd transistor g28 945GMS 1/16W SMT0402 1/10W SMT0603 NTC017-BA1G-A160T

BEL 100N TRANSISTOR PIN DIAGRAM

Abstract: BEL 100N TRANSISTOR Line Driver with Load Impedance Conversion Pinout DIP & SOIC Voi 1 Vinvl 2 Vnon-inv1 3 VEE 4 , current sourced or sunk by the CLC418 can exceed the maximum safe output current limit. 2 bSDHE!4 01034^ T3D Typical Performance Characteristics , A»*1o|i= H,=200 ¡ 02 ^=4 4 ft F =953 ñi , , \\ 4 ov w w w 1M 10M 100M Frequency (Hz) PSRR and CMRR 60 50 en
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SD101ACT-ND BEL 100N TRANSISTOR PIN DIAGRAM BEL 100N TRANSISTOR BEL 100N T3D DIODE clamp bel 100n pinout diagram 130MH CLC418AJP CLC418AJE CLC418AJE-TR CLC418AJE-TR13

transistor schottky model spice

Abstract: . 10.13: Types T3, T12, TLN1, T25 and T50 Diodes . 10.14: Type T3S Schottky Diode , . 10.17: Type T50S Schottky Diode. 10.18: Types T3, T12, TLN1, T25, and T50 , . 3.7 Modeling the Lateral PNP Transistor. 2-18 4. DIODES AND CAPACITORS 4.1 , .2-19 4.3 Schottky Overlap and Guard-Ring Geometries. 2-20 4.4 Schottky Diode Parasitic Elements , .2-22 4.7 Diode Models and Parameters. 2-22 4.8 Zener Diodes
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transistor schottky model spice VJ800 T-H2-21

TT 2188 transistor

Abstract: -V Flxed-Output and Adjustable Versions Very Low-Dropout V o ltage. . . Maximum of 32 mV at l0 « 100 mA (TPS7150 , Applications Power Good (PG) Status Output D OR P PACKAGE (TOP VIEW) GND [ EN [ IN [ IN [ 1 2 3 4 8 ] PG 7 j , B * 16 ] NC 15 ] S E N S E t 14 ] O U T 13 ] O U T 12 ] NC 11 ] N C GND [ 2 GND [ 3 NC[ 4 NC [ 5 , 4 currant u ofpuDUcaton dal». Product« conform to «pacffleatfont par tha tarma ol of T a wm it , ASSIGNMENTS IN - ^ TPS71xx (6) (4) (7) SENSET FB * OUT PG l< 1 ) GND CHIP THICKNESS: 15 MILS TYPICAL
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TT 2188 transistor TPS7101Q TPS7133Q TPS7148Q TPS7150Q TPS7101Y TPS7133Y

PAA 737

Abstract: CLC408 Performance Characteristics , rl=ioo. vcc=+5v, t=25 c, clcwsaj: umess specified , V k I 0.1 ovâ'ž > 2.oVâ'ž A 4. ov , / \ H7 " i t 4 r I 0 1 2 3 4 5 Output Amplitude (Vpp) 3rd Harmonic Distortion, Rl = 100Q 0 12 3 4 Output Amplitude (Vpp) 1M 10M Frequency (Hz) 100M 1M 10M Frequency , Distortion, Rl = 100Q -20 -30 m 40 13 e o S Q -50 0 1 2 3 4 5 Output Amplitude (Vpp) 2nd Harmonic
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CLC408 PAA 737 CLC408AJE CLC408AJE-TR CLC408AJP CLC426 S01124

a7710

Abstract: intel 915 motherboard circuit diagram . 51 7.1 4 Layout and Routing Guidelines , Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 Application Note Low-Power , 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 , - PIO Mode 4 transfers - PCI IDE bus master support · Integrated Universal Serial Bus (USB , Technology ­ AT Attachment with Packet Interface Extension (ATA/ATAPI-4) ftp://fission.dt.wdc.com/pub
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a7710 intel 915 motherboard circuit diagram intel 915 motherboard schematic RSMRST STR application 443BX

MR030

Abstract: h48 diode zener non-DDR2 Package Length P1 Trace Length Limit - L0 Escape 4/4/12 7/4/16 8/5/15 Data group : SA_DQ[63.0 , 5 4 3 2 1 D First International Computer,Inc Portable Computer Group HW , 4. Nat name Description : 5. Board Stack up Description : 6. Schematic modify Item and History : 7 , : Title Size C Date: 5 4 3 2 5FL.,NO.300,Yang Guang St.,NeiHu 114 TAIPEI, TAIWAN ,ROC (886-2)8751-8751 , GM965+ICH8M Document Number Title Wednesday, October 17, 2007 1 8 7 6 5 4 3 2 1
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MR030 h48 diode zener MR030 ver 0.6 zener diode H48 UniOhm chip resistor FW3227 MR030T DTSGF-61N-V-T/R GPIO17 MR040T

G990P11U

Abstract: FW3227 Isolation Spacing to non-DDR2 Package Length P1 Trace Length Limit - L0 Escape 4/4/12 7/4/16 8/5/15 Data , [7.0],SB_DQS[7.0]# GMCH P1 Escape 4/4/8 4/4/12 5/5/10 SO-DIMM L0 L0 L1 L1 L2 L2 S1 , 5 4 3 2 1 D First International Computer,Inc Portable Computer Group HW , Description : 2. PCI & IRQ & DMA Description : 3. Block Diagram : 4. Nat name Description : 5. Board Stack up , : Title Size C Date: 5 4 3 2 5FL.,NO.300,Yang Guang St.,NeiHu 114 TAIPEI, TAIWAN ,ROC (886-2)8751-8
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G990P11U transistor u6h diode Aa42 ZENER h48 TRANSISTOR C2328 smd transistor L44 MY031 12PIN 87151-1207L

h48 diode zener

Abstract: MR030 non-DDR2 Package Length P1 Trace Length Limit - L0 Escape 4/4/12 7/4/16 8/5/15 Data group : SA_DQ[63.0 , 8 7 6 5 4 3 2 1 3. Block Diagram : D CLK SLG8SP512TTR Reset Circuit , 6 5 4 3 2 Size C MR030>Merom+Crestline GM965+ICH8M Document Number Block Diagram Monday, September 03, 2007 Sheet 1 Rev 0.1 Date: 3 of 58 8 7 6 5 4 3 2 1 4. Nat name Description : Voltage Rails D DCIN PMU5V PMU3V 5VDDA 3VDDA 3VDDS 5VDDS 3VDDM 5VDDM
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BOSCH 281 005 019 A1250WV-S-03P Bosch hfm 6 C529 DIODE H48 zener diode G784 I1392CNU RTS5158-GR 88E8055 I3531A RJ-45 CX20561

0PA37

Abstract: OPA27CZ ±12.8 70 25 ±12 ±10 60 ±13.8 ±12.8 70 25 60 < B > V V a mA I ±15 ±4 l0 = OmADC 3 J ±22 4.7 ±4 ±15 ±22 4.7 ±4 ±15 ±22 5.7 VDC VDC mA | 3 i 3.3 I Specification A, B, C (J , - u u h h I 2 .6 P D S -4 6 6 K 1 7 3 1 3b S 0 0 2 ^ 0 Or, Call Customer , Average Drift1 3 1 Long Term Stability|4 ) Supply Rejection 5.5 4.5 3.8 0.18 4.0 2.3 06 35 3.1 3.0 0.08 , , OPA27/37G MIN TYP MAX UNfTS I 3.1 2.9 2.7 0.07 1.7 1.0 0.4 0.6 ±Vcc= 4 to 1 8 V ±Vcc= 4 to 18V
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0PA37 OPA27CZ P-27/O DG188 OPA37E2 F/20V 17313L

sil1364

Abstract: Sil1364A non-DDR2 Package Length P1 Trace Length Limit - L0 Escape 4/4/12 7/4/16 8/5/15 Data group : SA_DQ[63.0 , geometries for GMCH break-out region) Escape 4/4/12 7/4/16 8/5/15 SO-DIMM L0 L0 MS L1 , Escape 4/4/8 4/4/12 5/5/10 SO-DIMM L0 L0 L1 L1 L2 L2 S1 S1 Breakin MS Differential Pair , 5 4 3 2 1 D D Inventec Corporation R&D Division Board name : Mother Board , Size C Date: 5 4 3 2 Document Number M11D (Merom+Crestline+ICH8M) Rev Title A02 Sheet 1
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ITE8512F sil1364 Sil1364A Inventec PZ4782K foxconn fds8884 88E8055B0 ALC262/AMP 25VS/1 S1001 S1002

sil1364

Abstract: PZ4782K Isolation Spacing to non-DDR2 Package Length P1 Trace Length Limit - L0 Escape 4/4/12 7/4/16 8/5/15 Data , ],SB_DQS[7.0]# GMCH P1 Escape 4/4/8 4/4/12 5/5/10 SO-DIMM L0 L0 L1 L1 L2 L2 S1 S1 , 5 4 3 2 1 D D Inventec Corporation R&D Division C C Board name , District, Taipei 111, Taiwan TEL:+886-2-2881-0721 Title Size C Date: 5 4 3 2 M11D , 4 3 2 1 Schematic Page Description Santa Rosa Schematic Ver : 0.1 D C 1. Title 2
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am4825p G784P81U G545B1P8U IT8305E 654V M11D Santa Rosa 1/16W-0402 6012B0159201 NTC031-EA1G-A160T 6026B0001202 6012B0112702

AX381

Abstract: MAX381MJE 1 9 -0 3 0 0 , R e v 0 ; 9 /9 4 P re c is io n , L o w -V o lta g e A n a lo g S w itc h e s , ' C to +70 "C 16 Plastic DIP MAX381EPE - 4 c r c to + 8 5 " C _ A p p licatio , 4 0 t o +85' C 16 CERD IP" Communication Systems Test Equipment M AX381MJE -55°C to + 125 'C 16 CERD , -0.3V to +17V COM_, NO_, NC_. IN. . (V- - 2V) to (V+ 4 2V) or 30mA, wl :chevor occurs first C , Power D issipation (T a := +70°C) Plastic DIP (derate l0 .5 3 m W /l,C a b o v e + 7 0 c,C
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AX385 AX381 MAX381MJE X381/M AX383/M MAX381 401/DG403/DG AX383

LSISAS1068E

Abstract: TX6-RX6 x4 connector or into a x8 connector that is wired as a x4 connector 4 of 30 DB08 , , including the L0, L0s, and L1 states, by placing links in a power-savings mode during times of no link , · Provides 4 Kbytes of PCI Configuration address space per device Supports posted and nonposted , Diode Input Output Input Output TDIODE_VSS Cathode Connection of the Thermal Diode Power and , . Figure 4 provides a BGA pinout diagram. LSISAS1068E PCI Express to 8-Port Serial Attached SCSI
LSI Logic
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TX6-RX6 pinout scsi sata epbga SFF-8485 VDDIO33 DIODE M7 SMP DB08-000274-03

T511 012

Abstract: dc gear motor 24v inductance kgm2 (GD2/4) (lbin2 ) 0.0047×10-3 (16.06×10-3) 0.0084×10-3 (28.70×10-3) Armature winding resistance , Minimum load resistance RL k 10 Rotor inertia JTG kgm2 (GD2/4) (lbin2 ) 0.0011×10-3 (3.76×10-3 , IB A Resistance RB Inertia JB kgm2 (GD2/4) (lbin2 ) Mass WB kg (lbs) Open , based on the use of a test circuit illustrated below. 4) The values in the above table were measured , ) Lead wire length 1000mm (39.37inch) 4 Built-in optical encoder Standard specifications
SANYO DENKI
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T511 012 dc gear motor 24v inductance T402-011 G1030 ENCODER OPTICAL 5310 T730-012EL8 PP038 500P/R F-95958

UA317

Abstract: Fairchild dtl catalog .7-33 J/A3303, MA3403, ¿1A3503 . 7-40 Section 4 C L A S IC , M 2 4 8 X , MA248XR S e rie s . 5-23 y.A 2 4 8 0 , /¿ jiA 3 4 8 6 . , (UA75154. 9-45 jiA 7 5 4
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UA317 Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA725HM MA339PC S-11743 S-16308 CH-1218

RB80526PZ733256

Abstract: RB80526PY600256 .13 2.5.4 HALT/Grant Snoop State-State 4 , . 57 6.1.2 Thermal Diode , . 59 7.1 7.2 Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 AGTL Bus , . 50 4 Datasheet Contents Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 , .57 Thermal Diode Interface
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RB80526PZ733256 RB80526PY600256 KC80526GY850256 KC80526LY400256 PC MOTHERBOARD 440bx circuit diagram RB80526PZ866256 512KB 512-K 440MX AC-97 440BX

Diode KD 514

Abstract: B30C250 * * Planar-Z-Diode, LED » Leuchtdiode (auch Infrarot), C = Kapazitäts diode, Tu * Tunneldiode, Di = Diac; Spalte 4: G , NThy T25-100010 S BY 100 SY 210 BY 122 SB 1PM 4 SB 1 m 4 BY 123 BY 126 S SY 360/14 BY 127 £ SY 360/14 , 320/10, SY 210 SY 320/l0, SY 210 SY 210 SY 320/10, SY360/1 4 ;134-Gew.K=Geto. ; M4-Gew.A«=Geh. BYX30 , Verwendbarkeit zu prüfen sind. Ein Beispiel hierfür ist der Ersatz der Diode 1 N 914 und 1 N 4148. Statt des , sollte der billigste verweidbare Typ bestellt werden z. B. SY 360/1 statt SY 360/4* Es wurden möglichst
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Diode KD 514 B30C250 GD507A DIODE OA-172 kyx 28 SY360
Abstract: .13 2.5.4 HALT/Grant Snoop State-State 4 , . 57 6.1.2 Thermal Diode , . 59 7.1 7.2 Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 AGTL Bus , . 50 4 Datasheet Contents Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 , .57 Thermal Diode Interface Intel
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intel pentium 4 motherboard schematic diagram

Abstract: intel 775 motherboard diagram .13 2.5.4 HALT/Grant Snoop State-State 4 , . 57 6.1.2 Thermal Diode , . 67 Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 4 AGTL Bus Topology , . 50 Datasheet Contents Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17
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intel pentium 4 motherboard schematic diagram intel 775 motherboard diagram intel pentium 3 motherboard schematic diagram intel Socket 775 VID VTT i486 PC MOTHERBOARD CIRCUIT diagram

M21 M23

Abstract: 27367 .13 2.5.4 HALT/Grant Snoop State-State 4 , . 57 6.1.2 Thermal Diode , . 59 7.1 7.2 Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 AGTL Bus , . 50 4 Datasheet Contents Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 , .57 Thermal Diode Interface
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M21 M23 27367

thx 203

Abstract: thx 203 h t Mode 12 illli hnb=2078 MODES 4 -* -* -l0 -1 2 : «>U 1>4>LA3-4>LA$M>L1 «·lA2»>M-A*»4>LAS , |imxl4|un photomos with 100% aperture Image zone: 28,67mmx28,67mm Frame readout through 1,2 or 4 outputs Data rates up to 4 x 20MHz (compatibility with 15 frames/second) Possible binning 2x2 pixels (format , Transfer gait vo s OTA 4
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7899M thx 203 thx 203 h THX7899M PD44 diode TB 25 Abc 3200K

via vn800

Abstract: EQUIVALENT transistor 18751 R634 1K 1% 1/16W SMT0402 LR VCCP H_BSE L0 B C 1 1 TR NPN MMBT2222A_NL , 5 4 3 2 1 D First International Computer,Inc Protable Computer Group HW , : 2. PCI & IRQ & DMA Description : 3. Block Diagram : 4. Nat name Description : 5. Board Stack up , Drawing by : Richard Wang Total confirm by: LAN Circuit check by: Audio Circuit check by: 5 4 3 2 A , , May 19, 2006 1 Rev 0.2 Sheet 1 of 56 8 7 6 5 4 3 2 1 1. Schematic Page
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LM13W VT1631 via vn800 EQUIVALENT transistor 18751 DIODE SMD AE22 audio power sb 18751 VT8237R layout VN800 VT8237R VT8237 15PIN

foxconn ls 36 motherboard manual

Abstract: USER GUIDE FW82443BX MOTHERBOARD . 57 7.1 7.2 7.3 7.4 4 Resistor Values , .155 Design Guide 5 Contents Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 , .116 Design Guide 7 Contents Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 , MHz, 3.3 V device support · Integrated IDE controller with Ultra DMA/33 support - PIO Mode 4 , Power/440BX AGPset 2.2.1 System Bus Interface The 82443BX supports a maximum of 4 Gbytes of
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foxconn ls 36 motherboard manual USER GUIDE FW82443BX MOTHERBOARD foxconn LS 36 manual foxconn LS 36 front panel pinout AC POWER SWITCH foxconn ls 36 C277C 82371EB PLD22V10N

2B2 bridge rectifier ic

Abstract: foxconn ls 36 motherboard manual . 47 7.1 7.2 7.3 7.4 4 Clocking System Overview , . 137 Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 , .98 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 , with Ultra DMA/33 support - PIO Mode 4 transfers - PCI IDE bus master support · Integrated , AGPset Design Guide 2.2.1 System Bus Interface The 82443BX supports a maximum of 4 Gbytes of
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2B2 bridge rectifier ic siemens ferrite n22 p14 foxconn motherboard ls 36 Motherboard Intel fw82443bx W16 marking code sot 23 8155 intel microcontroller pin diagram

T flip flop CMOS IC

Abstract: blf 188 (see Tables 1 and 2) Up to 98,304 RAM bits; 4,096 bits per EAB, all of which can be used without , ,000 2,880 10 40,960 254 EPF10K100ß 100,000 158,000 4,992 12 24,576 191 Altera Corporation , (LEs) EABs Total RAM bits M aximum user I/O pins EPF1OKI00E 100,000 257,000 4,992 12 49,152 338 , with 144 to 672 pins, including the innovative FineLine BGATM packages (see Tables 3 and 4) SameFrameTM , ), (3) Device 144-Pin TQFP 102 102 102 20 8-Pin PQFP 147 147 147 147 147 2 4 0 -Pin PQFP
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T flip flop CMOS IC blf 188 FLEX10KE 256-P 484-P 672-P EPF10K30E EPF10K50E

transistor c1417

Abstract: via vn896 5 4 3 2 1 D First International Computer,Inc Portable Computer Group HW , : 2. PCI & IRQ & DMA Description : 3. Block Diagram : 4. Net name Description : 5. Board Stack up , Drawing by : Richard Wang Total confirm by: LAN Circuit check by: Audio Circuit check by: 5 4 3 2 A , , November 13, 2006 1 Rev 0.3 Sheet 1 of 56 8 7 6 5 4 3 2 1 1. Schematic Page Description : VA250 Schematic Ver : 0.3 D C 1. Title 2. Schematic Page Description 3. Block Diagram 4
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VN896 VT8237A VT1634AL transistor c1417 via vn896 c1417 transistor via VT8237A EEFSX0D221ey T0603 2SJ-A373-402 100MH

VN896

Abstract: VT8237A 5 4 3 2 1 D First International Computer,Inc Portable Computer Group HW , : 2. PCI & IRQ & DMA Description : 3. Block Diagram : 4. Net name Description : 5. Board Stack up , Drawing by : Richard Wang Total confirm by: LAN Circuit check by: Audio Circuit check by: 5 4 3 2 A , , December 10, 2006 1 Rev 0.4 Sheet 1 of 56 8 7 6 5 4 3 2 1 1. Schematic Page Description : VA250 Schematic Ver : 0.3 D C 1. Title 2. Schematic Page Description 3. Block Diagram 4
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c1568 npn transistor transistor C732 Va-250 a019 di tp nu apm4307 c743 diode MLB-160808-0600A-N2

sAMSUNG CK 5081 T MANUAL

Abstract: 64 bit carry-select adder verilog code . 3­8 Temperature Sensing Diode . 3­12 Chapter 4. DC & Switching Characteristics Operating Conditions , Testing Revised: April 2003 Part number: S51003-1.0 Chapter 4. DC & Switching Characteristics Revised , . Configuration & Testing Chapter 4. DC & Switching Characteristics Revision History Chapter 1 , information. Added the "Maximum Input & Output Clock Rates" section. 4 May 2003 v1.1 Updated
Altera
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sAMSUNG CK 5081 T MANUAL 64 bit carry-select adder verilog code intel 915 MOTHERBOARD pcb CIRCUIT diagram inverter PURE SINE WAVE schematic diagram mercury motherboards regulator ic AW 55 IC
Abstract: if desired. The back-panel bracket is shown below. Figure 4. Back Panel Drawing 4 LatticeECP3 , the configuration memory or FPGA directly. Table 4. Standard ispVM Programming Cable Configuration Pin 1 VCC Pin 2 TDO Pin 3 TDI Pin 4 TMS Pin 5 GND Pin 6 TCK After , Guide Table 5. ispVM JTAG Connector (see Appendix A, Figure 21) 6 5 4 3 2 1 Note , PWR Red 2 TDO Brown 3 TDI Orange 4 TMS Purple 5 GND Black 6 Lattice Semiconductor
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LFE3-95EAFN672 DDR2-SDRAM-84FBGA MT47H16M16BG-37E CY2304-1 CY2304SXC-1 CTS-CB3LV-3C100

T78 5VDC

Abstract: T72 5VDC 0 25 mV T24 GAIN UP (F) 4 1 ,45S 45 8.6 11.6 14.6 dB T25 GAIN UP , 4 ) CO U T is - - 1 © - 2 - © - 3 - o( 5 - O O 2- SONY Pin Description CXA1992BR -3 - SONY CXA1992BR -4 - SONY CXA1992BR Pin No. Symbol I , input. 38 39 PD1 PD2 RF l-V amplifier inverted input. Connect these pins to the photo diode A + , amplifier E gain adjustment. (When not using automatic balance adjustment) 44 V ee - ^4
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T78 5VDC T72 5VDC E97216A84 52PIN LQFP-52P-L01 LQFP052-P-1010

FR3709Z

Abstract: T24C08A 1 2 3 4 5 6 7 8 EW3 CPU CORE Page:25 +12V VCC_CORE CLOCK GEN CYPRESS , Page:9,10 Page:4,5,6 CHRONTEL CH7011A Page : 13 B IDE-HDD Page:15 1.5V_S5 1.5V , Page:21 FLASH Page:20 FAN Page:21 SYSTEM 4 USB PORT Page:19 USB2,3,5 MINI-USB Page: 19 USB4 D PCI ROUTING TABLE REQ0# / GNT0# REQ1# / GNT1# REQ3# / GNT3# 1 2 3 4 IDSEL AD18 AD20 AD17 , Sheet 1 8 Rev B3 of 30 A B C D E +3V U25A 4 HA#[3.31] H A#[3.31] HA#3 HA#4 HA
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NS0013 FR3709Z T24C08A c1470 toshiba c670 IC NS0013 fr3707z CY28346-2 IC91718 400MHZ NV34M 266MHZ 82852GM

socket am2 pinout

Abstract: PGA370 pinout State-State 4 .16 2.2.5 Sleep State-State , .55 4.1.2 Thermal Diode , .79 7.1 7.2 4 Alphabetical Signals Reference , 0.13 µ process List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 , process List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
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PGA370 socket am2 pinout PGA370 pinout socket pga370 SL5XS schematic diagram of TV memory writer 256KB
Abstract: 4-tap FIR filter. If both filters are cascaded, an 8-tap filter can be implemented. The LF43168 , output can be rounded from 8 to 19 bits. B l o c k D ia g r a m Video Imaging Products 1 0 4 /2 9 /9 7 -L D S .4 3 1 6 8 -F LF43168 DEVICES INCORPORATED F ig u r e 1 . Dual 8-Tap FIR Filter L F 4 3 1 6 8 F u n c t io n a l B l o c k D ia g r a m ill ] 0 Q / xnw | w -
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HSP43168 LF43168GC30 LF43168GC22 LF43168GC15 LF43168GMB39 LF43168GMB30

socket AM2 pinout

Abstract: schematic diagram of TV memory writer State-State 4 .14 2.2.5 Sleep State-State , . 77 7.1 7.2 4 FC-PGA2 Mechanical Specifications , . 52 4.1.2 Thermal Diode , 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 , .76 5 Pentium® III Processor with 512KB L2 Cache at 1.13GHz List of Tables 1 2 3 4 5 6
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AP-585 AP-589 Pentium III Developer

socket AM2 pinout

Abstract: celeron pga370 MOTHERBOARD CIRCUIT diagram State-State 4 .16 2.2.5 Sleep State-State , .54 4.1.2 Thermal Diode , .77 7.1 7.2 4 Alphabetical Signals Reference , µ process List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 , process List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
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celeron pga370 MOTHERBOARD CIRCUIT diagram motherboard agtl layout manual CK-408 socket M vid pinout AK28 DIODE celeron d 2.4 GHz

UPS APC 800 CIRCUIT

Abstract: APC UPS CIRCUIT BOARD Laser Diode Products for the OEM INTRODUCTORY INFORMATiON Who we are & what we do , kManufacturer of OEM laser diode products for analytical, biomedical, & industrial applications have been , diode is essential. Effective thermal management extends the life of a diode and promotes stability of , diode to produce a circular, diffraction-limited beam without correcting prisms. We also offer several , . 4 Symbol Key- NEW in g ! Com soon New product ANALOG Analog modulation up to
Power Technology
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UPS APC 800 CIRCUIT APC UPS CIRCUIT BOARD collimated LED 670 nm Laser Diode 808 2 pin 1000 mw APC back UPS RS 800 1550nm 5mw laser diode N-3441

Ps3 MOTHERBOARD CIRCUIT diagram

Abstract: CC5F . 35 4 Electrical, Power, and Thermal , ) .51 Thermal Diode and Analog to Digital Converter (ADC , .81 4 Intel® 6400/6402 Advanced Memory Buffer Datasheet 8 Clocking , . 201 14.6 Implementation Specific DDR Initialization and Calibration Registers (Function 4 , Memory Address Definition, BL=4. 114
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Ps3 MOTHERBOARD CIRCUIT diagram CC5F CSR BC5 diode A14A surface mount csr bc4 CSR BC6

ms 14531

Abstract: CSR BC8 . 43 2 3 4 Intel® 6400/6402 Advanced Memory Buffer Datasheet 3 4.1 4.2 4.3 4.4 , ) .57 Thermal Diode and Analog to Digital Converter ( , .87 6 7 4 Intel® 6400/6402 Advanced Memory Buffer Datasheet 7.1.5 8 SMBus Resets , . 207 14.6 Implementation Specific DDR Initialization and Calibration Registers (Function 4 , Memory Address Definition, BL=4. 120
Intel
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ms 14531 CSR BC8 SMA diode marking e7 Interconnect BIST 3130* intel WL4 DIODE MARKING

cm .02m z5u 1kv

Abstract: BPW22A speed: 4/t SLM high speed: 3/r SLM standard/high speed package availability SystemGate: 2p. DLM , diodes Backward diode Gunn effect diodes Impatt diodes Multiplier varactor diodes Special purpose , for tv applications 437 439 440 441 442 Television assemblies Tuners (with diode tuning , handbook 48 4 Mullard data base 450 Mullard distribution 452 * Registered Trade Mark for , AD2274/T8 AD2274/T15 AD2274/T25 0 S S S D D D D 0 D 441 441 442 441 441 441
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cm .02m z5u 1kv BPW22A pin configuration of BFW10 la4347 B2X84 fx4054 core BS9000 D3007 HE4000B

maxim 8770

Abstract: e600 MPC8641D. © Freescale Semiconductor, Inc., 2009. All rights reserved. 1. 2. 3. 4. 5. 6. 7. 8 , Enhanced TSEC Controller 10/100/1Gb RMII, GMII, MII, RGMII, TBI, RTBI [ x1/x2/x4/x8 PCI Exp (4 GB , Integrated Host Processor Hardware Specifications, Rev. 2 4 Freescale Semiconductor Overview · , DUART - Two 4-wire interfaces (SIN, SOUT, RTS, CTS) - Programming model compatible with the original , LVDD ­0.3 to 3.63 V V 4 ­0.3 to 2.75 V V 4 ­0.3 to 3.63 V V 4 ­0.3 to
Freescale Semiconductor
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MPC8641DEC MPC8641 maxim 8770 e600 MC8641 PC16550D

MPC8640D

Abstract: MPC8640 MPC8640D. © Freescale Semiconductor, Inc., 2009. All rights reserved. 1. 2. 3. 4. 5. 6. 7. 8 , Enhanced TSEC Controller 10/100/1Gb RMII, GMII, MII, RGMII, TBI, RTBI [ x1/x2/x4/x8 PCI Exp (4 GB , RapidIO interface unit - Supports RapidIO Interconnect Specification, Revision 1.2 - Both 1× and 4 , , ×2, ×4, and ×8 link widths - 2.5 Gbaud, 2.0 Gbps lane Four enhanced three-speed Ethernet , Hardware Specifications, Rev. 3 4 Freescale Semiconductor Overview · · · · · ·
Freescale Semiconductor
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MPC8640 powerpc dhrystone mips MPC8640D MIPS SSTL-18 MPC8640DEC

NIKKO NR 9600

Abstract: Triac bt 808 600cw  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , 3.289 m 4 Alphanumeric Listing of Thyristors and Triacs A-Z 4.003 $ fmmm 1 . 4.151 1 other , volume deals with diodes, rectifiers, emitters, thyristors, triacs, 3 and 4 layer diodes and similar , drawings are in Section 8. These drawings are referenced from the numbers in column 'O' of Sections 3 and 4. For the Buyer The buyer of semiconductors will find the right-hand column (P) of Sections 3 and 4
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NIKKO NR 9600 Triac bt 808 600cw GDS C25/0 BT135 2U12 sony KSM 213 DCP
Abstract: there are two cores on the MPC8640D. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18 , [ x1/x2/x4/x8 PCI Exp (4 GB/s) AND 1x/4x SRIO (2.5 GB/s) ] OR [2-x1/x2/x4/x8 PCI Express (8 GB/S , 4× LP-Serial link interfaces - Transmission rates of 1.25-, 2.5-, and 3.125-Gbaud (data rates of , Supports ×1, ×2, ×4, and ×8 link widths - 2.5 Gbaud, 2.0 Gbps lane Four enhanced three-speed Ethernet , Specifications, Rev. 2 4 Freescale Semiconductor Overview · · · · · · · · - Allows Freescale Semiconductor
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Abstract: Freescale Semiconductor Document Number: MPC8640D Rev. 4, 05/2014 Technical Data MPC8640 , . 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22 , Enhanced TSEC Controller 10/100/1Gb RMII, GMII, MII, RGMII, TBI, RTBI [ x1/x2/x4/x8 PCI Exp (4 GB , MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 4 2 Freescale , MPC8640 and MPC8640D Integrated Host Processor Hardware Specifications, Rev. 4 Freescale Semiconductor Freescale Semiconductor
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SMD fuse P110

Abstract: 74c914 4 3 Figure 1: 2 1 ML300 CPU Table 1: ML300 CPU Virtex-II Pro Based , Fiber (Quad) Serial ATA (Dual) Sheet 1: Sheet 2: Sheet 3: Sheet 4: Sheet 5: Sheet 6 , Configuration/Debug Diagram FPGA Banking Diagram Index of Primary Component BOM (1 of 4) BOM (2 of 4) BOM (3 of 4) BOM (4 of 4) Net Classes (1 of 2) Sheet Sheet Sheet Sheet Sheet Sheet Sheet , FPGA Bank 2 - PMC Gen Purp, Audio, PCI, IIC FPGA Bank 3 - PMC Gen Purp, Audio, PCI, IIC FPGA Bank 4 -
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SMD fuse P110 74c914 transistor b733 EPSON C691 MAIN transistor SMD p113 npn transistor smd w19 AD1885 RP326 RP324 RP340 RP341
Abstract: . 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22 , , RTBI [ x1/x2/x4/x8 PCI Exp (4 GB/s) AND 1x/4x SRIO (2.5 GB/s) ] 10/100/1Gb 10/100/1Gb RMII , MPC8641 and MPC8641D Integrated Host Processor Hardware Specifications, Rev. 3 4 Freescale , integrity checked with preamble signature and CRC DUART â'" Two 4-wire interfaces (SIN, SOUT, RTS, CTS) â , 1.98 V V 3 LVDD â'"0.3 to 3.63 V V 4 â'"0.3 to 2.75 V V 4 â'"0.3 to 3.63 Freescale Semiconductor
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LF352

Abstract: 97C11 ADD3500 3-1/2 Digit DVM with 59 Multiplexed 7-Segment Output ADD3701 3 3/4-Digit DVM with 69 , LM134 3-Terminal Adjustable Current Sources LM136 Reference Diode LM199 Precision Reference LM199A , â'" (RR) RAMP REFEREN CE 2~5 â'" 18 â'" GNO 2- 4 J £ 1? (P0L/SD0) P0LARITY , $ s = 4 .7 5 V , I o h = 100 PA Logic â' 0 " Output Voltage Auto Cycle 3.8 0.4 5/f V sec 4/f Prop. Delay COMP to EO C V V V S S = 5.25V , Io l = â'"1.6 mA Width of EOC
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LF352 97C11 DM8123 ADB1200 ADB4500 ADC0800 ADC0816/ADC0817 ADC1210/ADC1211 ADC3511/ADC3711

PC8572E

Abstract: microprocessor Supporting DES, 3DES, MD-5, SHA-1/2, AES, RSA, RNG, Kasumi F8/F9 and ARC-4 Encryption Algorithms â , Gb eTSE C 4-Channel DMA Controller External control 4-Channel DMA Controller External , designed for embedded applications. Supports 4-Kbyte-4-Gbyte page sizes â'" Enhanced hardware and , transaction types (stashing) â'" 1, 2, or 4 ways can be configured for stashing only â'" Eight-way , processor â'" SRAM features include the following: â'" 1, 2, 4, or 8 ways can be configured as SRAM â'" I
e2v semiconductors
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PC8572E microprocessor IT 8572E F-91572 0934B

11AK12

Abstract: 4062XLA and XC4000X Series (D escrip tion only) file, v1.4 (11/97) on the Xilinx W EBLINX at: http://w w w , (Logic and RAM)* 10,000 -3 0 ,0 0 0 13,000 -4 0 ,0 0 0 18,000 -5 0 ,0 0 0 22,000 - 65,000 27,000 - 80,000 33,000 - 100,000 40,000 - 130,000 55,000 - 180,000 75,000 - 235,000 100,000 -3 0 0 ,0 0 0 130,000 -4 0 0 ,0 0 0 180,000 -5 0 0 ,0 0 0 Num ber of Flip-Flops 1,536 2,016 2,560 3,168 3,840 4,576 5,376 7 , 1,215,368 1,433,864 1,924,992 2,686,136 3,373,448 4,551,056 5,433,888 Device XC 4013XLA XC
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11AK12 4062XLA Trans Metrics P100 xilinx HQ240 AD 690 4044XL XC4000XLA/XV 4000XLA 4000X XC4000E XC40250XV BG432
Abstract: . LEVEL 2 CACHE D EC OU PLING . 10 4.2.4. HALT/GRANT SNOOP STATE â'" STATE 4 , ) .90 8.1.38. REQ[4:0]# (I/O ).91 8.1.39. RESET# (I , ).86 8.1.48. SLP# ( I ) . 92 4 6/10/98 2 , ) .93 8.1.60. VID_L2[4:0], V ID _ C O R E [4:0 ](0 ).93 8.1.61. WP ( I , Insertion Pressure P o in ts .65 Figure 4. BCLK, PICCLK, TC K -
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IT 8572E

Abstract: 8572E -1/2, AES, RSA, RNG, Kasumi F8/F9 and ARC-4 Encryption Algorithms ­ Integrated PME (Regular Expression , C Controller eTSEC 10/1 00/1 Gb eTSEC 10/1 00/1 Gb eTSE C 10/ 100/ 1G b eTSE C 10/ 100/ 1G b FEC 4-Channel DMA Controller External control 4-Channel DMA Controller External control Serial RapidIO Messaging , designed for embedded applications. Supports 4-Kbyte-4-Gbyte page sizes. ­ Enhanced hardware and software , (stashing). ­ 1, 2, or 4 ways can be configured for stashing only. ­ Eight-way set-associative cache
e2v semiconductors
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8572E Ceramic Capacitors 104 m30 M21 diode

MPSC16

Abstract: 256K-4M device depth - 1-4 banks supported directly â'¢ AD bus device controller - 4 chip selects - , . 18 1 18 18 19 20 20 20 20 20 21 21 21 21 4. Address Space 4.1 4.2 4 .3 4.4 22 , DRAM Address Space, Offset: 0 x 0 0 0 . 4 .4 .1 .2 Device 0 Address Space, Offset: 0 x 0 0 4 . 4 .4 .1 .3 Device 1 Address Space, Offset: 0 x 0 0 8
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MPSC16 GT-96010 10/20-M D0D13Q4

"ESP"

Abstract: RGMII SGMII a preliminary document, and contains information which is subject to change. 1. 2. 3. 4. 5. 6. 7 , designed for embedded applications. Supports 4-Kbyte­4-Gbyte page sizes. - Enhanced hardware and software , (stashing). ­ 1, 2, or 4 ways can be configured for stashing only. - Eight-way set-associative cache , features include the following: ­ 1, 2, 4, or 8 ways can be configured as SRAM. ­ I/O devices access SRAM , Express OceaN Switch Fabric Serial RapidIO Messaging Unit 4-Channel DMA Controller 4-Channel DMA
Freescale Semiconductor
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RGMII SGMII APU FCM MPC8572EEC MPC8572E

DIODE D29 -08

Abstract: 1-13GHz . 4 Revision History . 4 Processor System Bus and VREF , 2.2.4 HALT/Grant Snoop State-State 4 . 8 2.2.5 , 4.1.2 Thermal Diode , . 76 7.1 7.2 4 Datasheet Intel® Pentium® III Processor with 512KB L2 Cache at 1.13GHz to
Intel
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DIODE D29 -08 1-13GHz l440gx manual BX80526U600256E RB80526PY650256 80526PZ600256 BX80526C600256E RB80526PZ600256 600EMH

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: 2SK1058 MOSFET APPLICATION NOTES . 60 Section 4 Precautions in Handling , . 120 5.8 Source-Drain Diode Characteristics , ent 4. C ircuitry and other exam ples described herein are m eant m erely to indicate the , itachi sales offices w hen planning to use the products in M EDICAL APPLICATIO NS. 4 Index S , . .1037 4AK26. 1163 2SK2059 (L). .1040 4 AM11
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APC UPS es 500 CIRCUIT DIAGRAM 2SK1058 MOSFET APPLICATION NOTES sk 100 gale 065 tf UPS APC rs 500 CIRCUIT diagram transistor bf 175 2SK2264 ADE-408 50502C

TRANSISTOR ST25A

Abstract: ST25A transistor u m b er: 2 4 3 7 7 0 -0 02 9/30/98 12:32 PM 24377002.DOC INTEL CONFIDENTIAL (until October , , or other Intel literature, m ay be obtained by calling 1 -8 0 0 -5 4 8 -4 7 2 5 or by visiting Intel , . 38 4.2.3. STOP-G RANT STATE- STATE 3 .39 4.2.4. HALT/GRANT SNOOP S T A T E STATE 4 , ).86 8.1.37. REQ[4:0]# (I/O ). 88 8.1.38. RESET# ( I , ) .90 8.1.58. TRST# ( 8.1.59. VID L2[4:0], V ID
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TRANSISTOR ST25A ST25A transistor ST25A Pentium II Xeon intel 4362 al microprocessor superset system design wintel

intel pentium 3 motherboard schematic diagram

Abstract: 243565 2.2.4 HALT/Grant Snoop State-State 4 . 8 , . 4 Revision History . 4 BCLK/BCLK# & PICCLK Signal Quality Specifications and Measurement Guidelines37 AGTL Signal , . 76 7.1 7.2 4 FC-PGA2 Mechanical Specifications , . 47 4.1.2 Thermal Diode
Intel
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243565 motherboard agtl layout manual components motherboard PCB diagram PGA370 socket

SL5XS

Abstract: RB80526RX600128 State-State 4 .13 2.2.5 Sleep State-State , 4.1.2 Thermal Diode , .70 7.1 7.2 4 Datasheet Intel® Celeron® Processor for the PGA370 Socket up to 1.30 GHz on 0.13 µ process List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 16 17 15 18 19 20 21 22 23 24 25 26 , ® Processor for the PGA370 Socket up to 1.30 GHz on 0.13 µ process List of Tables 1 2 3 4 5 6 7 8 9 10 11
Intel
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RB80526RX600128 BX80524R300128 RB80526RY900128 298596 RK80530RY001256 intel celeron 633 128 66 1.65v 128-KB BX80526F766128 BX80526F733128 BX80526F700128 BX80526F667128 BX80526F633128

intel celeron 633 128 66 1.65v

Abstract: PGA370 pinout /Grant Snoop State-State 4 .16 2.2.5 Sleep , Diode .56 Thermal , .79 7.1 7.2 4 Datasheet 298596-002 Intel® Celeron® Processor for the PGA370 Socket up to 1.30 GHz on 0.13 µ process List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 , on 0.13 µ process List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Intel
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FV80524RX366128 BX80526F566128 BX80524P533128 BX80524P500128 BX80524P466128 BX80524P433128 BX80524P400128
Abstract: Stateâ'"State 4 .14 2.2.5 Sleep Stateâ'"State , . 77 7.1 7.2 4 FC-PGA2 Mechanical Specifications , . 52 4.1.2 Thermal Diode , List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 , Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 Intel
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intel 775 motherboard diagram

Abstract: socket AM2 pinout State-State 4 .14 2.2.5 Sleep State-State , . 77 7.1 7.2 4 FC-PGA2 Mechanical Specifications , . 52 4.1.2 Thermal Diode , Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 , 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
Intel
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IOx32 775 MOTHERBOARD CIRCUIT diagram intel 810 MOTHERBOARD pcb CIRCUIT diagram pentium MOTHERBOARD CIRCUIT diagram Socket am2 Processor Functional Data Sheet T48 regulator

8086 microprocessor kit manual

Abstract: ATC 25V 0603 CAPACITOR 2.2.4 HALT/Grant Snoop State-State 4 . 8 , . 4 Revision History . 4 BCLK/BCLK# & PICCLK Signal Quality Specifications and Measurement Guidelines37 AGTL Signal , . 76 7.1 7.2 4 FC-PGA2 Mechanical Specifications , . 47 4.1.2 Thermal Diode
Intel
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8086 microprocessor kit manual ATC 25V 0603 CAPACITOR 64 pin zif connector

800MH

Abstract: l440gx manual /Grant Snoop State-State 4 .14 2.2.5 Sleep , Diode. 53 Thermal , . 77 7.1 7.2 4 Datasheet Intel® Pentium® III Processor with 512KB L2 Cache at 1.13GHz to 1.40GHz List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 , List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
Intel
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800MH 80526PZ866256 BX80526F850256E 600BMH 512-KB 600MH 550EMH 256-KB 550MH

all type of motherboard 775 socket

Abstract: socket AM2 pinout State-State 4 .14 2.2.5 Sleep State-State , . 76 7.1 7.2 4 FC-PGA2 Mechanical Specifications , . 52 4.1.2 Thermal Diode , micron process List of Figures 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 , List of Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
Intel
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all type of motherboard 775 socket 775 motherboard Intel Pentium 4 Socket 775 PIN diagram FC-PGA2 370 am2 socket pin diagram pinout diagram for AM2 processor socket core
Abstract: _ 55 4 3.0. TCP PINOUT 3.1. Pentium® Processor with Voltage Reduction Technology Differences , which allow 2-Mbyte and 4-Mbyte page sizes. The Pentium processors have added significant data , Figure 1. Pentium® Processor Block Diagram 5 4fl2L>17S â¡ 1 7 4 2 Iì2 Ã'SE PENTIUM , # 296 BUSCHK# 288 HLDA 311 PRDY 318 AHOLD 14 CACHE# 21 HOLD 4 PWT , Control BF 186 CLK 272 4 fl2 bl ? 5 QITMER? 334 STPCLK# 181 intei PENTIUM -
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815X100 735X90 610X75 75-MH 50-MH 90-MH

P40 transistor

Abstract: asus 5 4 3 2 1 A3H CONTEXT 01_BLOCK DIAGRAM 02_REVISION LIST 03_DOYHAN CPU(1) 04 , (4) 10_ALVISO GND(5) 11_GMCH STRAPPING/LVDS TRANS 12_ICH6M_SATA,LPC,IDE(1) 13_ICH6M_USB,PCI/E,PMIO(2 , DOTHAN PAGE 3,4 D FSB 533MHz LVDS PAGE 16 D Parallel Port PAGE 28 CRT PAGE 15 , DIAGRAM Engineer: Howard Tu Rev 1.0 Sheet 1 A3H Date: Thursday, June 30, 2005 5 4 3 2 1 of , SMCLK_BAT1 TOP/BOT 4 mils +3.3V IO IN1/IN3 3.5 mils IO +3.3V SMDATA_BAT1 Differential SUSB# +3.3V O 70 OHM
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P40 transistor asus lcd inverter test schematic F02JK2E 915GM IT8510 ICS954213 IT8510E ALC880 RTL8100CL RJ11/45 R5C841

intel G31 circuit diagram

Abstract: diode RGP 20 Compliant - Instruction/Data Cache: 32 KByte, 4-way Set Associative, NRU Replacement Algorithm, Lockable - , Integrated SRAM Memory Controller (1 MB) Address Translation Unit - 2 KB or 4 KB Outbound Read Queue - 4 KB Outbound Write Queue - 4 KB Inbound Read and Write Queue Two Programmable 32-bit Timers and Watchdog Timer , and Transmit FIFOs - 4 pin Master/Slave Capable Peripheral Bus Interface - 8-, 16-bit Data Bus with , Application DMA Controller - Three Independent Channels Connected to the MCU and the South Internal Bus - 4
National Semiconductor
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intel G31 circuit diagram diode RGP 20 3150* intel 33DM 128-E PC3200 PC4300 315039-001US 81342--E

ap11a21

Abstract: TMS 3812 cross reference ® processors - 800 MHz or 1.2 GHz - ARM* V5TE Compliant - Instruction/Data Cache: 32 KByte, 4-way Set , FIFOs - 4 pin Master/Slave Capable Peripheral Bus Interface - 8-, 16-bit Data Bus with Two Chip , Datasheet 3 Intel® 413808 and 413812Contents Figures 1 2 3 4 5 6 7 8 9 10 11 12 14 15 , Intel® 413808 and Intel® 413812 I/O Controllers Datasheet 4 October 2006 Order Number: 315040-001US ContentsIntel® 413808 and 413812 Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
Intel
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ap11a21 TMS 3812 cross reference AA10 M66EN PAR64 REQ64

3150* intel

Abstract: KByte, 4-way Set Associative, NRU Replacement Algorithm, Lockable - Unified Level 2 Cache: 512 KByte , Controller (1 MB); dedicated to the SAS transport Address Translation Unit - 2 KB or 4 KB Outbound Read Queue - 4 KB Outbound Write Queue - 4 KB Inbound Read and Write Queue Application DMA Controller - Three Independent Channels Connected to the MCU and the South Internal Bus - 4 KByte Data Transfer , port Three I2C Bus Interface Units Two UART (16550) Units - 64 Byte Receive and Transmit FIFOs - 4
Intel
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315038-001US 81348--E

81348

Abstract: 3150* intel processors - 667 MHz, 800 MHz and 1.2 GHz - ARM* V5TE Compliant - Instruction/Data Cache: 32 KByte, 4 , ); dedicated to the SAS transport Address Translation Unit - 2 KB or 4 KB Outbound Read Queue - 4 KB Outbound Write Queue - 4 KB Inbound Read and Write Queue Application DMA Controller - Three Independent Channels Connected to the MCU and the South Internal Bus - 4 KByte Data Transfer Queue - CRC 32C , (16550) Units - 64 Byte Receive and Transmit FIFOs - 4 pin Master/Slave Capable Peripheral Bus
Intel
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81348 315038-002US

G34 package processors

Abstract: 3150* intel Compliant - Instruction/Data Cache: 32 KByte, 4-way Set Associative, NRU Replacement Algorithm, Lockable - , Memory Controller (1 MB) Address Translation Unit - 2 KB or 4 KB Outbound Read Queue - 4 KB Outbound Write Queue - 4 KB Inbound Read and Write Queue Two Programmable 32-bit Timers and Watchdog Timer , and Transmit FIFOs - 4 pin Master/Slave Capable Peripheral Bus Interface - 8-, 16-bit Data Bus with , Application DMA Controller - Three Independent Channels Connected to the MCU and the South Internal Bus - 4
Intel
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G34 package processors 315039-002US

1357-ball

Abstract: 81348 ® processor(s) - 800 MHz and 1.2 GHz - ARM* V5TE Compliant - Instruction/Data Cache: 32 KByte, 4-way Set , Transmit FIFOs - 4 pin Master/Slave Capable Peripheral Bus Interface - 8-, 16-bit Data Bus with Two Chip , ® 413812 I/O Controllers Datasheet 3 Intel® 413808 and 413812Contents Figures 1 2 3 4 5 6 7 8 9 10 , Intel® 413808 and Intel® 413812 I/O Controllers Datasheet 4 October 2006 Order Number: 315040-001US ContentsIntel® 413808 and 413812 Tables 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26
Intel
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1357-ball intel G31 circuit diagram free intel G31 maintenance AH31 ESL rating

bc946

Abstract: MAX8743EEI 5 4 3 2 1 D DOTHAN 533MHZ PAGE 3,4 CPU D FSB 533MHz LVDS PAGE 25 , Title : BLOCK DIAGRAM Engineer: Size Custom 5 4 3 2 Miller Liu Rev 1.1 Project Name A3V Sheet 1 Date: Tuesday, August 02, 2005 1 of 55 5 4 3 2 1 P.51 P , , CLK_PWR_GD# VR_VID0 - VR_VID5, STP_CPU#, PM_DPRSLPVR, PM_PSI# A Title : Engineer: Size Custom 5 4 3 , , August 02, 2005 2 of 55 5 4 3 2 1 H_D#[0.63] 6 H_A#[16.3] D 6 U48B
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MAX8743EEI bc946 Q104B Socket AM2 BT238 capacitor C0402 533MH M24/26P LPC47N217 L78L05 LM4040BIM MIC5233BM5

81348

Abstract: 3150* intel processors - 800 MHz or 1.2 GHz - ARM* V5TE Compliant - Instruction/Data Cache: 32 KByte, 4-way Set , Transmit FIFOs - 4 pin Master/Slave Capable Peripheral Bus Interface - 8-, 16-bit Data Bus with Two Chip , Datasheet 3 Intel® 413808 and 413812-Contents Figures 1 2 3 4 5 6 7 8 9 10 11 12 14 15 13 16 17 18 , Datasheet 4 May 2007 Order Number: 315040-002US Contents-Intel® 413808 and 413812 Tables 1 2 3 4 , description in Table 4. 002 Updated Table 18 for Cgp, Cpcix, and Lpin values. Revised Table 17 for Tcase (Tc
Intel
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G86 770 A2

Abstract: nvidia g86-730 P23 P22 T24 R24 L25 T25 N25 L26 M26 N24 U39B D[0]# D[1]# D[2]# D[3]# D[4]# D[5]# D[6]# D[7]# D[8]# , 5 4 3 2 1 PCB STACK UP LAYER 1 : TOP LAYER 2 : SGND1 LAYER 3 : IN1 LAYER 4 : SVCC , CPU Merom 478P (uPGA)/35W PAG 3,4 CPU THERMAL SENSOR PAG 30 CLK_CPU_BCLK,CLK_CPU_BCLK , Rails VCC_CORE VCCP B Bluetooth ON S5 Ctl Signal VR_ON MAINON MAINON MAINON MAINON 4 6 7 8 9 , /L0 PB2/NB8M-SE Infineon MB:31PB2MB0040 /J0 PB2/NB8M-SE Hynix A Quanta Computer Inc. PROJECT
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ICS9LPR363DGLF NB8P-SE-256M G86 770 A2 nvidia g86-730 u4614 g86 630 a2 thyristor t24 MAX8736 MAX8734 TPS51116 R5C832 318MH

xgold 118

Abstract: .39 Intel® Atomâ"¢ Processor S1200 Product Family for Microserver Datasheetâ'"Volume 1 of 2 4 , . 46 4 Power Management , .85 5.5 Thermal Diode , .89 5.11.1 Thermal Diode Offset Register , . 158 Ball Map - Part 4 of 8
Intel
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xgold 118

53C720SE

Abstract: 53C770 -bit host interface should be enabled in this mode. Finally, Bus M ode 4 closely resembles the 80386D X interface. Bus M odes 1, 2 and 4 support both the Big and Little Endian byte ordering schemes and Bus M ode , (Chapter 2, C hapter 4, C hapter 6) D M A FIFO increased to 96 bytes (C hapter 2) SCSI offset increased to 16 levels (Chapter 4, SXFER register description) Internal SC R IPTS RAM (C hapter 2, C hapter 4) Expanded tim ers (C hapter 4, STIMEO and STIM E1 register descriptions) Expanded SLPAR register
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53C770 53C7X SYM53C770 53C720SE 53C700 53C720SE data 53C710 53C8X 80386SX

2N5070

Abstract: 2N5591 MOTOROLA . 2 -3 M R F 4 0 6 . M R F 4 2 1 . 2 -8 2 -1 2 M R F 4 3 2 , . M R F 4 6 0 , ( E B - 3 2 ) . 2 -4 7 B roa dban d T ra n s fo rm e
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2N5070 2N5591 MOTOROLA motorola hep cross reference Motorola transistors MRF 947 2N5644 siemens semiconductor manual

PC MOTHERBOARD CIRCUIT diagram intel 810

Abstract: intel 810 MOTHERBOARD pcb CIRCUIT diagram Design Guide iii 4 Layout and Routing Guidelines , Display Cache (Topology 4 PCI Connectors .4-25 , Diode Circuit to Connect RTC External RTCRESET , Display Cache Routing (Topology 4) .4-10 AC
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82801AA PC MOTHERBOARD CIRCUIT diagram intel 810 intel 810 MOTHERBOARD pcb CIRCUIT zoran dvd 82810e CK810 intel 810e pcb 82810E IRQ14

evic vt 60w

Abstract: LM1040 . CD4529BC Dual 4-Channel or 8-Channel Analog Data E lection , 4-Channel Analog Multiplexer , /MM74HC4052 Dual 4-Channel Analog M ultiplexer. * MM54HC4053/MM74HC4053 , . ADC0833 8-Bit Serial I/O A /D Converter with 4-Channel M u ltiplexer , . Section 4 3-3 3-4 3-7 3-16 3-48 3-59 3-70 3-81 3-91 3-107 3-115 3-140 3-158 3-171 3-188
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evic vt 60w LM1040 Transistor Shortform Datasheet & Cross References LMC835 lm331 equivalent lm567 equivalent

HMXR-5001

Abstract: HP 5082 7000 , CA 95050 (408) 988-7234 Microwave Semiconductor Diode and Transistor Designers Catalog 1984-85 , and microwave products. This catalog is divided into 4 product sections: Silicon Bipolar Transistors , -4166 Beam Lead PIN Diode â'¢â'¢â'¢.â'¢â'¢.â'¢â'¢â'¢.â'¢.â'¢.â'¢.â'¢â'¢.â'¢.â'¢â'¢.â'¢â'¢.â'¢.â'¢â'¢â'¢â'¢â'¢â'¢.â'¢â'¢â'¢â'¢ 222 Beam Lead PIN Diode .â'¢â'¢.â'¢.â'¢â'¢â'¢â'¢â'¢â'¢â'¢â'¢â'¢â'¢â'¢.â'¢.â'¢â'¢â'¢.â'¢â'¢â'¢â'¢.â'¢.â'¢.â'¢.â'¢. 224 Beam Lead PIN Diode
Hewlett-Packard
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HMXR-5001 HP 5082 7000 33150A 2N6838 5082-0825 13001 YF 09 TRANSISTOR

HCL G28 CP

Abstract: ufc 101 vc 1 2 3 4 5 6 7 8 OA8 BLOCK DIAGRAM A CPU THERMAL SENSOR MAX6648MUA CPU BANIAS/DOTHAN 478 Pins (micro FC-BGA) PAGE 4, 5 BANIAS / Montara-GME / ICH4-M DOTHAN CPU VRM PAGE 33 A PAGE 4 BATT CHARGER SYSTEM POWER CLOCK GEN CY28346 or ICS950810 PAGE 29 , ) Ethernet port KB/Mouse,Seri al port USBx3(3,4,5), Paral l el port B 66MHZ PG 33 33MHZ, 3.3V PCI , TPA0312 PAGE 22 CARDBUS S L OT PAGE 18 MEDIA PAGE 17 4 IN1 1394 SLOT C O NN PAGE 18 SIO
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HCL G28 CP ufc 101 vc LP141 fw 2602 cap 220p quanta 4X100MHZ 266MH R5C593 82562ET PC87391 PC87591

RGMII SGMII

Abstract: PWB 826 service manual Freescale Semiconductor Technical Data Document Number: MPC8572EEC Rev. 4, 06/2010 MPC8572E , reserved. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21 , designed for embedded applications. Supports 4-Kbyte­4-Gbyte page sizes. - Enhanced hardware and , transaction types (stashing). ­ 1, 2, or 4 ways can be configured for stashing only. - Eight-way , processor. - SRAM features include the following: ­ 1, 2, 4, or 8 ways can be configured as SRAM. ­ I/O
Freescale Semiconductor
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MPC8548 PWB 826 service manual marking code AVN CRC-32 SHA-256 SHA-384

transistor C639-c640

Abstract: BJT C828 Guide 3 ® Intel 830M Chipset Family 3.4. 3.5. 3.6. 3.7. 3.8. 4. 4.2. 4.3. 4.4 , . 53 6.1. 6.2. 6.3. 4 System Memory Two SO-DIMM Layout Guidelines , .19 Figure 4. PSB Routing Topology 1 , . 110 Figure 57. A Diode Circuit to Connect RTC External Battery
Intel
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transistor C639-c640 BJT C828 c828 npn transistor datasheet KBC 1091 NU kbc 1091 pin configuration NPN transistor c828 830MP R1593 R1592 MAX1718 R1579

CK810

Abstract: intel 810 MOTHERBOARD pcb CIRCUIT .3-1 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4 About This Design Guide , Display Cache (Topology 4) .4-9 , .4-23 PCI Bus Layout Example for 4 PCI Connectors .4-24 , Diode Circuit to Connect RTC External Battery .4-26 RTCRESET , Display Cache Routing (Topology 4) .4-9 AC
Intel
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saa7102a 805 avx schematic diagram 21v crt tv sharp intel 430 chipset schematic smd transistor nc 61 IC Ensemble 810A3 82810A3

intel chipset g31 motherboard repair

Abstract: l7251 . 4 t t n e e r c m e u S c c Do 2. System View and Disassembly , . id f n o C 4. Definition & Location of Major Components , . 4 1.2 System Hardware Parts , MODEM, 4 USB ports, S-Video and audio line out, external microphone function. The memory subsystem , Bridge integrates a high performance CPU interface for Intel Pentium 4 / Pentium-M 4 8666 N/B
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PN800 intel chipset g31 motherboard repair l7251 mitac 8666 diode 25PH 800 g31 motherboard repair VT8235CE 0603D PR511 PC503 PC504 PD501
Abstract: architecture combined with an external crystal and varactor diode, the LMK04000 family provides sub , crystal oscillator with an external crystal and a varactor diode. When used with a very narrow loop , LVC M 0S OUTPUTS vco LMK04000BISQ BiCMOS 3 4 1185 to 1296 MHz LVDS OUTPUTS LMK04001 BISQ BiCMOS 3 4 1430 to 1570 MHz LMK04002BISQ BiCMOS 3 4 1600 to 1750 , . 26 14.6 CLKout DIVIDE (CLKoutX_DIV, X = 0 to 4 -
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K04000 K04001 K04002 K04010 LMK04011 LMK04031
Abstract: . © 2008-2011, 2014 Freescale Semiconductor, Inc. All rights reserved. 1. 2. 3. 4. 5. 6. 7 , applications. Supports 4-Kbyte to 4-Gbyte page sizes. â'" Enhanced hardware and software debug support â , types (stashing). â'" 1, 2, or 4 ways can be configured for stashing only. â'" Eight-way , processor. â'" SRAM features include the following: â'" 1, 2, 4, or 8 ways can be configured as SRAM. â , â'" Four banks of memory supported, each up to 4 Gbytes, for a maximum of 16 Gbytes per controller Freescale Semiconductor
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MPC8572EL

Abstract: SGMII PCIE bridge reserved. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21 , designed for embedded applications. Supports 4-Kbyte to 4-Gbyte page sizes. - Enhanced hardware and , transaction types (stashing). ­ 1, 2, or 4 ways can be configured for stashing only. - Eight-way , processor. - SRAM features include the following: ­ 1, 2, 4, or 8 ways can be configured as SRAM. ­ I/O , memory supported, each up to 4 Gbytes, for a maximum of 16 Gbytes per controller - DRAM chip
Freescale Semiconductor
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MPC8572EL SGMII PCIE bridge DDR3 pcb layout ethernet phy sgmii SHA-512

"ESP"

Abstract: RGMII SGMII Key Features 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18. 19. 20. 21. 22. 23 , Especially designed for embedded applications. Supports 4-Kbyte­4-Gbyte page sizes. - Enhanced hardware and , (stashing). ­ 1, 2, or 4 ways can be configured for stashing only. - Eight-way set-associative cache , features include the following: ­ 1, 2, 4, or 8 ways can be configured as SRAM. ­ I/O devices access SRAM , SDRAM - 64-bit data interface per controller - Four banks of memory supported, each up to 4 Gbytes
Freescale Semiconductor
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Abstract: . All rights reserved. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18 , Especially designed for embedded applications. Supports 4-Kbyte to 4-Gbyte page sizes. â'" Enhanced , memory ranges or special transaction types (stashing). â'" 1, 2, or 4 ways can be configured for , , 2, 4, or 8 ways can be configured as SRAM. â'" I/O devices access SRAM regions by marking , SDRAM â'" 64-bit data interface per controller â'" Four banks of memory supported, each up to 4 Gbytes Freescale Semiconductor
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DDR3 DIMM 240 pinout

Abstract: 240 pin DIMM DDR3 connector . All rights reserved. 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. 16. 17. 18 , for embedded applications. Supports 4-Kbyte­4-Gbyte page sizes. - Enhanced hardware and software , transaction types (stashing). ­ 1, 2, or 4 ways can be configured for stashing only. - Eight-way , processor. - SRAM features include the following: ­ 1, 2, 4, or 8 ways can be configured as SRAM. ­ I/O , memory supported, each up to 4 Gbytes, for a maximum of 16 Gbytes per controller - DRAM chip
Freescale Semiconductor
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DDR3 DIMM 240 pinout 240 pin DIMM DDR3 connector AM3 Processor Functional Data Sheet DDR2 sdram pcb layout guidelines DDR3 "application note" DDR3 DIMM footprint

MIC710

Abstract: XC6875 . 3-1 3-2 3-3 Data Sheets (See page 3-2 for page numbers.) C H A P T E R 4 - V O L T A G E R E G U , .5-71 AC-Coupled 4-Channel Sense Am plifier , . 5-71 AC-Coupled 4-Channel Sense Am plifier , .3-122 1/4-Watt Audio Amplifier , ).4-B4 Positive Voltage Regulator (100m A
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MIC710 XC6875 MC1741L MC7B12C MC3390 LF355AN MC3401 110-E77-20

AM97C11CN

Abstract: AM9711CN Transistor/Diode Arrays 11 Appendices/Physical Dimensions 12 Introduction NEW DATA BOOK FORMAT , 3, 4, or 5 Digit Number Suffix Indicators: A â'" Improved Electrical Specification C â , system, i.e. L M 7 4 1/L M 7 4 1C or L M 1 4 1 4 /L M 1 5 1 4 . Parts are generally listed in the table , . 2-5 LM113 Reference Diode , . 3-213 INSTRUMENTATION AMPLIFIERS - SECTION 4 Definition of Terms
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AM97C11CN AM9711CN LM378 equivalent SVI 3102 b LM1850 LM747A

XZ132

Abstract: F10K25 Includes R JE X 10 K A FLEX 10K ,u r v Embedded Programmable Logic Family May 1999, ver. 4 , , R evision 2.2 FLEX 10KA devices include pull-up clamping diode, selectable on a pin-by-pin basis for , ,000 69,000 1,728 216 6 12,288 246 EP F10 K 4 0 EP F10 K 5 0 EP F10 K 5 0 V 50,000 116,000 2,880 360 10 , F10 K 10 0 EP F10 K 10 0 A 100,000 158,000 4,992 624 12 24,576 406 EP F10 K 13 0 V E P F 10 K 2 5 0 A , 600 pins (see Table 4) Pin-compatibility with other FLEX 10K devices in the same package FineLine
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XZ132 F10K25 Clock Management with ClockLock & ClockBoost Features White Paper EPF10K
Abstract: t, o r o th e r Intel lite ra tu re m a y be o b ta in e d b y c a llin g 1-8 0 0 5 4 8 -4 7 2 5 o r , . 42 4.1.1 Thermal Diode , .13 2.2.4 HALT/Grant Snoop Stateâ'" State 4 , . 35 3.1 4 .0 Terminology , . 90 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Second Level -
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500MH

link budget calculation

Abstract: K32C30 -1/2, AES, RSA, RNG, Kasumi F8/F9 and ARC-4 Encryption Algorithms ­ Integrated PME (Regular Expression , Gb eTSE C 10/ 100/ 1G b eTSE C 10/ 100/ 1G b FEC 4-Channel DMA Controller 4-Channel DMA Controller , Especially designed for embedded applications. Supports 4-Kbyte-4-Gbyte page sizes ­ Enhanced hardware and , (stashing) ­ 1, 2, or 4 ways can be configured for stashing only ­ Eight-way set-associative cache , include the following: ­ 1, 2, 4, or 8 ways can be configured as SRAM ­ I/O devices access SRAM regions by
e2v semiconductors
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link budget calculation K32C30 PC8572/E 0934C

isl 6251 schematic

Abstract: smd transistor A4S pF trr ­ ­ 4 ns µA AC characteristics Diode capacitance VR = 0 V, f = 1 MHz , (TA) Semiconductor Group 4 Silicon Switching Diode q BAS 16 For high-speed switching , BAS 40 . Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 4 BAS 40 . , BAS 70 . Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 4 BAS 70 . , Group 4 Silicon Switching Diode Array BAV 99 For high-speed switching q Connected in
Siemens
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isl 6251 schematic smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Q62702-A772 Q62702-A731 Q62702-A773

XCV300PQ240

Abstract: g31k Internal 3-state bussing - IEEE 1149.1 boundary-scan logic - Die-temperature sensor diode · · · , approximately 6.5 V. When PCI 3.3 V compliance is required, a conventional clamp diode is connected to the , " on page 4. There are optional pull-up and pull-down resistors at each input for use after , standards can be used in close proximity to each other. See I/O Banking" on page 4. An optional weak-keeper , standards are shown in Table 4. GTL and GTL+ appear under all voltages because their open-drain outputs do
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XCV300PQ240 g31k DS003 66-MH

6414a

Abstract: LQFP144 4-channel PWM unit + 4-channel XPWM 2 CAN 2.0B interfaces operating on 1 or 2 CAN busses (64 , Oscillator watchdog On-chip bootstrap loader Clock generation ­ On-chip PLL with 4 to 8 MHz , Functional description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 4 , . . . . . . . . . . . . . 91 20.7 4/9 Input filter . . . . . . . . . . . . . . . . . . . . , ST10F272M Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table
STMicroelectronics
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PQFP144 LQFP144 6414a ST10 ST10F272E st10 Bootstrap

ST10F273

Abstract: t308 equivalent / compare units 4-channel PWM unit + 4-channel XPWM PQFP144 (28 x 28 x 3.4mm , watchdog timer ­ Oscillator watchdog On-chip bootstrap loader Clock generation ­ On-chip PLL and 4 , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4 Memory organization . , . . . . . . . . . . . . . . . . . . . . . . . . 105 21.1 21.2 4/179 Idle mode . . . . . . . , ST10F273 List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6
STMicroelectronics
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t308 equivalent ST10F276E 10MHz Real Time Clock transistor w1P transistor w1P 83 W1P 51

LQFP144

Abstract: PQFP144 On-chip PLL with 4 to 8 MHz oscillator ­ Direct or prescaled clock input Real time clock and 32 , multi-functional general purpose timer units with 5 timers Two 16-channel capture / compare units 4-channel PWM unit + 4-channel XPWM Idle, power down and stand-by modes A/D converter , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 4 Memory organization . , . . . . . . . . . . . . . . . . . . . . . . . . . 103 21.1 4/173 Idle mode . . . . . . . . .
STMicroelectronics
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ST10F271 ST10F271Z1Q3 ST10F271Z1T3 ST10F272

000D04

Abstract: Controller ST10F272 PRODUCTION DATA SYMBOL timer units with 5 timers Two 16-channel capture / compare units 4-channel PWM unit + 4 , watchdog On-chip bootstrap loader Clock generation ­ On-chip PLL with 4 to 8 MHz oscillator , description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4 Memory , . . . . . . . . . . . . . . . . . . . . . . . . 106 21.1 4/179 Idle mode . . . . . . . . . . , tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table
STMicroelectronics
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000D04 Controller ST10F272 PRODUCTION DATA SYMBOL st10f269 boot diode T35 12H ST10F269 ST10F272Z2Q3

4k2k Scaler

Abstract: 4K2K resolutions bootstrap loader Clock generation ­ On-chip PLL with 4 to 8 MHz oscillator ­ Direct or prescaled , 15.6ns A/D converter ­ 24-channel 10-bit ­ 3 µs minimum conversion time 4-channel PWM unit + 4-channel XPWM July 2006 Rev 1 1/180 www.st.com 1 Contents ST10F271B , . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 4 Memory organization . . . . . . . , modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106 21.1 4/180 Idle
STMicroelectronics
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ST10F271E TQFP144 4k2k Scaler 4K2K resolutions TQFP144 DIMENSION

ST10F273 CEG

Abstract: w1p 59 / compare units 4-channel PWM unit + 4-channel XPWM PQFP144 (28 x 28 x 3.4mm , and 4 to 12 MHz oscillator ­ Direct or prescaled clock input Real time clock and 32 kHz on-chip , . . . . . . . . . . . . 21 4 Memory organization . . . . . . . . . . . . . . . . . . . . . . . , modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 21.1 21.2 4/179 , ST10F273E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6
STMicroelectronics
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ST10F273 CEG w1p 59 F273-CEG-P F273-CEG-P-TR F273-CEG-T F273-CEG-T-TR

W1P 82

Abstract: W1P 83 timers Two 16-channel capture / compare units I 4-channel PWM unit + 4-channel XPWM I I I , watchdog On-chip bootstrap loader Clock generation â'" On-chip PLL and 4 to 12 MHz oscillator â , . . . . . . 21 4 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , modes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105 21.1 21.2 4/179 , ST10F273E List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6
STMicroelectronics
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W1P 82 W1P 83 W1p 76

6414a

Abstract: st10 Bootstrap -bit, accuracy ± 5 LSB ­ 4.85 µs minimum conversion time 4-channel PWM unit + 4-channel XPWM 2 CAN , generation ­ On-chip PLL with 4 to 8 MHz oscillator ­ Direct or prescaled clock input Real-time , . . . . . . 20 4 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 20.7 4/176 Input filter , 6/176 ST10F272M Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8
STMicroelectronics
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3170B AN23

laptop motherboard circuit diagram P4

Abstract: intel chipset g31 motherboard repair . 34 2.3.7 PCI Express Port 4 , 3.11.2 Intel VT-d Memory Mapped Registers . 256 4 , 271 4 Intel® 5400 Chipset MCH Datasheet 4.3 4.4 4.5 4.6 4.7 5 4.2.3 Expansion , . 368 5.8.4 FB-DIMM Thermal Diode Overview , .68 Device 16, Function 4: On-Die Throttling
Intel
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laptop motherboard circuit diagram P4 SF 0010 g31 m7 te MOTHERBOARD CIRCUIT diagram 631xESB ESI 296 hp laptop motherboard datasheet

HB-1M1608

Abstract: HB-1M2012-601JT VID0 VID1 VID2 VID3 1 2 3 4 1 1 1 R57 @0 RP1 8 7 6 5 L@8P4R-0 2 R69 L@0 2 1 2 1 R68 LN_0 2 U27 2 R58 , # GT_SUSTAT1# CPUINIT# NMI INTR SMI# 2 9 10 11 12 13 14 15 16 8 7 6 5 4 3 2 1 L@16P8R-0 1 2 R448 L@0 1 2 , DOCUMENT uPGA2 COPPERMINE with Geyserville 3 4 4 Compal Electronics, inc. Title THIS SHEET OF , 33 Gerserville Tech. page 6 Coppermine (uPGA2) CPU HCLK_CPU page 3,4,5 HA#(3.31) HD , ) PCLK_SIO ISA BUS Super IO 37N869 page 27 page 28 4 14M_5V RESET CKT page 32 KeyBoard
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HB-1M1608 HB-1M2012-601JT smd diode f4 4d HB-1M2012 N32N la733 LA-733 318MHZ 440ZXM PR181

TRANSISTOR ED203

Abstract: inverter LS600 . T IL6 4 P h o to tra n s is to r , .99 T IX L7 4 Silicon Avalanche Photodetector M o d u le , . T IL2 4 Gallium Arsenide E m i t t e r , . T IX L1 4 Gallium Arsenide E m i t t e r , . Injection Laser Diode Fundamentals
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TRANSISTOR ED203 inverter LS600 Germanium itt Vidicon deflection yoke germanium TUNNEL DIODE spice model 1N2175 SDA17

Horizontal Transistor TT 2246

Abstract: CA3098 equivalent : (4 0 7 ) 724-3937 See S ectio n 12 fo r D ata S h eets A vailab le on A nsw erFA X EUROPEAN ,   * Comparators 3 * Sample and Hold Amplifiers * Differential Amplifiers * Transistor and Diode Arrays , . 5-3 CA3039 Diode A rra y , . 2-123 CA3141 High-Voltage Diode Array For Commercial, Industrial & Military Applications , t. 2-270 CD22100 CMOS 4 x 4 Crosspoint Switch with Control Memory High-Voltage Type (20VR a
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Horizontal Transistor TT 2246 CA3098 equivalent ICL8038 applications advantages disadvantages ca3080 spice vogt transformer 406 69 ICL8038 spice HFA1105 HFA1115 350MH 225MH HFA1106 HFA1135

Electro SEX

Abstract: ge cr21 100 1r0 -Bit Parallel Structure 8 + 2 Byte Structure Multiplexed Pixel Input Ports; 1:1, 2:1, 4:1 + 5 V CMOS M onolithic , ADV7151 is capable of 1:1, 2:1 and 4:1 multiplexing. The on-board palette priority select inputs enable , V m in V m ax |j.A m ax p F tvp V IN = 0 .4 V or 2 .4 V V aa V aa - 1 .0 - 1 .6 V m in V m ax jjlA ±10 10 m ax V IN = 0 .4 V or 2 .4 V p F typ 2 .4 0 .4 20 20 V m in V m ax jjlA I s o u r c e = 4 0 0 |J-A I s i n k = 3.2 m A m ax p F typ 15 22 m A m in m
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Electro SEX ge cr21 100 1r0 RS-343A/RS-170 100-L C1694 S-100
Abstract: to approximately 6.5 V. When 5-V compliance is not required, a conventional clamp diode may be , shown in Table 4. GTL and GTL+ appear under all voltages because their open-drain outputs do not depend on V c c o . Table 4: Compatible Output Standards v cco 3.3 V 2.5 V 1.5 V Compatible Standards PCI , building block of the Virtex CLB is the logic cell (LC). An LC includes a 4-input function generator, carry , slices, as shown in Figure 4. Figure 5 shows a more detailed view of a single slice. In addition to the -
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CS144 TQ144 PQ240 HQ240 BG256 BG352

LM1808

Abstract: LM1800 Circuits Transistor/Diode Arrays Analog Switches New Products Physical Dimensions/Def. of Terms , 3, 4, or 5 Digit Number S uffix indicators: - DEVICE F A M ILY DEVICE FA M ILY AH â'" Analog , Voltage Comparators/Buffers Functional Blocks Consumer Circuits Transistor/Diode Arrays Analog , , P, T, MP o â'" F j H |1 TO-202 (D -4 0 , Durawatt) P {Packa ge 37) S , FUNCTIONAL BLOCKS - SECTION 4 LM 122/LM222/LM322 Precision T i m e r
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LM1808 LM1800 LM3018AH ks2 6k LM375 MC7812CP MIL-M-38510 M-38510/ 10101BCC L-M-38510
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