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UC1612J Texas Instruments SILICON, RECTIFIER DIODE, CERDIP-8 visit Texas Instruments
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diode smd m7

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M7 smd diode

Abstract: diode smd m7 DESCRIPTION Schottky barrier diode encapsulated in a SOT-23 small SMD package Single and double diodes with , SMALL SIGNAL SCHOTTKY DIODE FEATURES AND BENEFITS * Surface mount device * Extremely fast , (*) Mounted on ceramic substrate: 7 x 5 x 0.5 mm STATIC ELECTRICAL CHARATERISTICS (per diode for double , uA ) Diode Capacitance 70 V Cj Reverse Current ( VR = 50 V ) 2.0 pF IR ( VR , 0.64 K 0.085 0.18 PART NO. MAS70 MAS70C MAS70A MAS70S MARKING M7 M7C 		-
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M7 smd diode diode smd m7 smd diode M7 Diode marking m7 m7 smd diodes m7 diode

LM7805CV

Abstract: nec2501 SMD 0805 6 5 D1,D2,D3,D4,D5 M7 SMD DO-214AC 7 2 D6,D7 1N4148 Through , diode is needed to prevent electrolytic capacitor discharge through power supply. VDD 0.1uF C11 U5 , M7 + EC7 470uF/25V SCL SDA AT24C02 Figure 2-8 EEPROM Circuit and Brown Out Detect , 14 kV varistor is added to prevent over voltage. U1 N(Black) TP1 1 IN M7 C1 100nF , 78L05 1 2 T1 1 L(Yellow) 2 6 5 3 4 DB-JS-C4H D2 M7 D3 M7 D5 		Samsung Electronics
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LM7805CV nec2501 HS0038 HS0038 IR sensor S3F84U8 HS0038 ir circuit S3F84U8/UA NEC2501 ADE7755 24-SSOP 42-SDIP

LED Driver aplications

Abstract: HER107 US1M ; 400 V; pitch = 5 mm; axial - - D1 diode; 700 V; SMD M7 SIYU D2 diode; 700 V; SMD M7 SIYU D3 diode; 700 V; axial HER107 - D4 TVS diode; 3 W; 180 V; axial P6KE180A - D5 diode; 700 V; SMD US1M DIODES D6 diode; 700 V; axial HER107 - D7 diode; 700 V; SMD US1M DIODES D8 Zener diode; 0.5 W; 5 %; 33 V; SOD80 V; SMD , Semiconductors D10 diode; 700 V; SMD M7 SIYU IC1 controller IC; SO14; SMD SSL2103 NXP 		NXP Semiconductors
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LED Driver aplications HER107 US1M Dimming LED aplications UM10507

RPACK 10k x 9

Abstract: Zener diode smd marking code C24 U1 PE97042 TP11 +3_3V CLK_M6 M7 M8 A0 DMODE VDD_PRE E_WR_A1 A2 A3 FIN FIN , Zener Diode 3 Pin Header 8 Pin Header 2 Pin Header SMA Connector (Side Mount) 2 Pin Header, .100 4 , (2GHz-3.2GHz) 20MHz 10 Pin SIP Resistor AVX Chip Resistor 0603 SMD Resistor 0805 SMD Resistor 0805 SMD Resistor 0805 16 Pin SMD R-Pack SMD Resistor 0603 SMD Resistor 0603 SMD Resistor 0805 SMD Resistor 0603 AVX Chip Resistor 0603 SMD Resistor 0402 Low pass filter (with R8) Not on PCB REF Select 		-
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J502-ND LV142MLN RPACK 10k x 9 Zener diode smd marking code C24 R22D control PDU board PCB DIODE smd marking R14 R12-G R12-H R10-B R10-C R10-D R10-A

m7 smd diodes

Abstract: smd diode E17 M3 M4 M5 M6 M7 M8 M9 M10 M11 5 VDAC INJECTS THE CONTROL VOLTAGE FROM THE LTC2978 INTO , M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R37 43.2 1W 10K R15 R36 43.2 1W 3.3V , L11 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R18 R45 20 1W 10K COUT11 100uF 6.3V , L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R46 20 1W , L2 L3 L4 L5 L6 L7 L8 L9 L10 L11 M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 R49 20 1W 		Linear Technology
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smd diode E17 smd diode E7 DC1613A H12 smd transistor manual substitution FREE DOWNLOAD transistor manual substitution DC1540A DC1360A DC1361A LTM4603EV LTC29

smd transistor marking code XC

Abstract: XC SMD MARKING Diode Inverse diode continuous forward current A k . r A = 25 -C 0.12 Inverse diode direct current,pulsed . r A = 2 5 -C Inverse diode forward voltage 0.36 V ^SD . \/GS = 0 , G13377b 06.99 " M7 GehäusemaÃbilder Package Outlines I nf ineon technologies P-T0263 , , trays etc. are contained in our Data Book â' Package Inform ationâ' . SMD = Surface Mounted Device 		-
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smd transistor marking code XC XC SMD MARKING Q67000-S322 BSS169 P-T0252-3-1 G13377 P-T0263-3-2/D2PAK Q133777

SMD SOT23 XC

Abstract: smd transistor marking code XC Parameter Unit Values min. typ. max. . . 0.1 Reverse Diode Inverse diode continuous forward current A k rA = 2 5 -c Inverse diode direct current,pulsed ku . 7- = 25-C a Inverse diode forward voltage 0.3 V 'â 'S D 0.8 VGS = 0V, Ip = 0.3 A 1.3 , G13377b "M7 06.99 GehäusemaÃbilder Package Outlines Infine on technologies P-T0263 , in our Data Book â'Package Informationâ' . SMD = Surface Mounted Device Data Book 1060 â 		-
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SMD SOT23 XC Q67000-S321 SQT-89 D13377 D13377T

diode U1J

Abstract: smd diode u1j SEMICONDUCTOR CO., LTD. The professional manufacturer of Diode, Bridge and SMD Rectifiers you are looking for. l a i r STANDARD RECOVERY RECTIFIERS: Surface Mount Glass Passivated Rectifiers: SM4001 thru SM4007, M1 thru M7, General Purpose Plastic Rectifiers: T r 1N4001S thru 1N4007S, 1N4001 thru 1N4007, 1N5391 thru 1N5399, 1N5400 thru 1N5408, Glass Passivated Rectifiers: ew v riom.t 1N4001G thru 1N4007G, 1N5319G thru 1N5399G, GR201G thru GR207G, 1N5400G thru 1N5408G, GR301G 		-
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DB107GS diode U1J smd diode u1j 5 amp diode rectifiers 10 amp diode rectifiers bridge rectifier 1N4007 1N5822 SMD GR307G RL251 RL257 SM5817 SM5819 SGL41-20
Abstract: Avalanche energy, periodic limited by 7jmax Ear 4 Reverse diode dv/df dv/dt 6 Vgs  , , leded ftthJA - - 100 SMD version, device on PCB: % |JA @ min. footprint - - , Reverse Diode Inverse diode continuous forward current 7C = 2 5 'C Inverse diode direct current,pulsed r c = 25 â'™ C Inverse diode forward voltage Vgs = 0 V , /f = 16.8 A Reverse recovery time VH = , Forward characteristics of reverse diode C = /(V DS) ï = f(Vso) parameter: 7 j, fp = 80 (js -
OCR Scan
08N10 SPD08N10 P-T0252 Q67040-S4126 SPU08N10 P-T0251
Abstract: Ear 17.5 Reverse diode dv/dt dv/dt 6 Gate source voltage Mss ±20 V Power , resistance, junction - ambient f î thJA - - 62 SMD version, device on PCB: ñ thJA @ , yDD = 80 V, lD = 47 A, VGS = 0 to 10 V Gate plateau voltage VDD = 80 V, /D = 47 A Reverse Diode Inverse diode continuous forward current Tc = 25 -C Inverse diode direct current,pulsed Tc = 25 *C Inverse diode forward voltage l/GS = 0 V , /F = 94 A Reverse recovery time VR = 50 V, lf = ls , d if/d -
OCR Scan
47N10 SPP47N10 P-T0220-3-1 Q67040-S4183 SPB47N10 P-T0263-3-2

23N05

Abstract: s = 25 £2 Avalanche energy, periodic limited by 7imax Reverse diode dv/df 6 kV/ps % = 22 , SMD version, device on PCB: fith J A @ min. footprint - - 75 @ 6 cm2 cooling area1 , a u ) 22 A Reverse Diode Inverse diode continuous forward current Tc = 25 -C Inverse diode direct current,pulsed 7b = 25 *C Inverse diode forward voltage Vq S = 0 V, /F = 44 A Reverse recovery , parameter : Iq = 16 A, Vqs = 10 V SPD23N0S Typ. capacitances Forward characteristics of reverse diode 		-
OCR Scan
23N05 SPD23N05 Q67040-S4152 SPU23N05 Q67040-S4132-A2

Transistor SMD SM 942

Abstract: energy, periodic limited by r jmax Reverse diode dv/d t 6 kV/|js Is = 30 A, \/DS = 24 V, d/7d , Thermal resistance, junction - ambient, leded ñ thJA - SMD version, device on PCB: ñ thJA , = 0 to 10 V Gate plateau voltage ^(plateau) V Vdd = 24 V, lD = 30 A Reverse Diode Inverse diode continuous forward current Tc = 25 Inverse diode direct current,pulsed Tc = 25 A "C 'C Inverse diode forward voltage V G S = 0 V , /F = 6 0 A Reverse recovery time 		-
OCR Scan
Transistor SMD SM 942 30N03 67040-S

kd smd transistor

Abstract: /dt ±20 V Plot Reverse diode dv/dt 7.5 ^GS Avalanche energy, periodic limited by , - 100 SMD version, device on PCB: f f thJA @ min. footprint - - 75 @ 6 cm2 , Diode Inverse diode continuous forward current Tc = 25 *C Inverse diode direct current,pulsed Tq = 25 -C Inverse diode forward voltage 1/qs = 0 V, lF = 56 A Reverse recovery time UR = 15 V, /F=/s , : /D = 28 , 1qs = 4 5 V / Typ. capacitances Forward characteristics of reverse diode c = f 		-
OCR Scan
kd smd transistor 28N03L SPD28N03L Q67040-S4139-A2 P-T0251-3-1 Q67040-S4142-A2 SPU28N03L

smd diode K7

Abstract: plcc68 socket C10 100pF VDD GND M0 M1 M2 M3 M4 M5 M6 M7 M8 A0 A1 A2 A3 DIRECT PRE_EN NC C9 , Zener Diode LED 0805/1206 0603 Jumper 0603 Jumper Loop Filter Low pass filter (with R22) Low , SMD Resistor 0603 16 Pin SMD R-Pack DO NOT INSTALL DO NOT INSTALL 27 28 29 30 31 32 , (2GHz-3.2GHz) 20MHz VCO3 (6.5 GHz-6.63GHz) SMD Resistor 0603 SMD Resistor 0603 SMD Resistor 0603 2 dB pad 2 dB pad SMD Resistor 0805 SMD Resistor 0805 AVX Chip Resistor 0603 SMD Resistor 0805 SMD 		Peregrine Semiconductor
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MW520 smd diode K7 plcc68 socket SMD diode S4 59 C26-C43 smd diode S6 41 S6 SMD zener diode PLCC68 IDCMATE26 AD797 ED80012-ND M3500-2032
Abstract: , periodic limited by 7|max e ar 12 Reverse diode dw/df d v/di 6 Gate source voltage ^GS , , junction - ambient, leded Thermal resistance, junction - case ñ thJA - - 62 SMD version , 24 V, lD = 46 A, 1/qS = 0 to 10 V Gate plateau voltage VDD = 24 V, /D = 46 A Reverse Diode Inverse diode continuous forward current Tc = 25 "C Inverse diode direct current,pulsed Tc = 25 -C Inverse diode forward voltage l/GS = 0 V, Ip = 9 2 A Reverse recovery time 1/r = 15 V, /p=/g , d/p/di = -
OCR Scan
46N03 G13371

28N05L

Abstract: 140 Avalanche energy, periodic limited by 7imax e ar 7.5 Reverse diode d v/dt dv/dt , 100 SMD version, device on PCB: f î thJA @ min. footprint - - 75 @ 6 cm2 cooling , /bD = 40 V, /D = 28 A Reverse Diode Inverse diode continuous forward current Tc = 25 â'˜C Inverse diode direct current,pulsed 7C = 25 -C Inverse diode forward voltage 1qs = 0 V, /f = 56 A , characteristics of reverse diode C = f (VDS) /f = '(V sd ) parameter: 7 f, tp = 80 |js 0 10 20 		-
OCR Scan
28N05L SPD28N05L SPU28N05L Q67040-S4122 Q67040-S4114-A2
Abstract: , VDD = 25 V, Rqs = 25 Q Reverse diode dv/df 6 kV/ps /s = 2.9 A, VDS = 20 V, d/7df = 200 A , point (Pin 4) flthJS SMD version, device on PCB: fithJA K/W K/W @ min. footprint - , 0 V , lD = 2 .9 â  V A Reverse Diode Inverse diode continuous forward current A TA = 25 â'™C Inverse diode direct current,pulsed TA = 25 "C Inverse diode forward , gs Typ. capacitances Forward characteristics of reverse diode C = f(Vbs) Â¥ = f (v s d -
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BSP320S Q67000-S4001

diode gee a9

Abstract: mJ /d = 47A , Vdd = 25 V, Rgs = 25 Q Avalanche energy, periodic limited by 7jmax Reverse diode , , junction - case ñ thJA - - 62 SMD version, device on PCB: f l thJA @ min. footprint , Reverse Diode Inverse diode continuous forward current Tc = 25 'C Inverse diode direct current,pulsed Tc = 25 *C Inverse diode forward voltage yGS = 0 V , /F = 94 A Reverse recovery time VR = 50 V , reverse diode C = f (Vos) f (VSd) parameter: VGS = 0 V, / = 1 MHz parameter: 7 j, /p = 80 ps 		-
OCR Scan
diode gee a9 47N10L SPP47N10L SPB47N10L Q67040-S4177 Q67040-S4176 D1337M2
Abstract: Timax £ ar 4 Reverse diode dv/df dv/di 6 Gate source voltage ^GS ±20 V , Thermal resistance, junction - ambient, leded fithJA SMD version, device on PCB: ^hJA 3.1 - , VDD = 160 V ,/D = 7 A Reverse Diode Inverse diode continuous forward current 7c = 2 5 °C Inverse diode direct current,pulsed Tc = 25 â'˜ C Inverse diode forward voltage l/GS = 0 V , l F = 1 4 , diode C = f(V DS) l f = f(Vso) parameter: Vqs = 0 V, f = 1 MHz p a ra m e te r: 7 f , fp = 8 -
OCR Scan
07N20
Abstract: 0.18 mJ Reverse diode dvldt dv/dt 6 Gate source voltage ^GS ±20 V Power , resistance, junction - soldering point (Pin 4) flthJS SMD version, device on PCB : fiihJA K/W K , Reverse Diode Inverse diode continuous forward current TA = 25 "C Inverse diode direct current,pulsed Ta = 25 â'˜ C Inverse diode forward voltage VGS = 0 V , /F = 5.2 A Reverse recovery time Vr = 30 , Forward characteristics of reverse diode C = 1 (V DS) /F = '(V SD) Ã235bü5 Data Book -
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BSP318S Q67000-S127 G133D17
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