NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: capacitor C27 can change by double the value of one forward voltage of a diode, that is at least 1 V in , the diodes D26 and D27. The diode D27 is necessary to transform the AC current through the capacitor , winding of the transformer are rectified by the diode D24 and smoothed by the capacitor C24. The generated DC voltage is stabilized and limited by the Zener diode D25 to 2.7 V. The transistor T24 acts first as a diode with anode at C24 and kathode at pin 4. When the voltage drop at this diode is 0.7 V ... | Original |
45 pages, |
D051 fault finding all type of lcd tv file ICE1QS01G LCD TV SMPS circuit pro ctv circuit diagram R282 S4558 transformer winding formula step down zero crossing detector mosfet FLIPFLOP SCHEMATIC ICE1QS01 ICE1QS01 equivalent ICE1QS01 abstract |
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| Abstract: directly and the output voltages drop to the value which is determined by the Zener diode D62. Power , that the rectifier diode is only forward biased by the AC line voltage being higher than the voltage , a diode D, a resistor R, and a capacitor C. This snubber circuit cuts off the voltage overshoots at , inductor L, a diode D and a capacitor C. Fig. 8 shows the charge pump circuit which is connected between , switching transistor T. The bridge rectifier replaces the diode D1 in Fig. 6. The inductor L is put in to ... | Original |
57 pages, |
power factor correction wiring TDA 820 m siemens RC snubber SMPS CIRCUIT DIAGRAM USING TRANSISTORS E55/28/21 sem 2106 inverter diagram TDA 1060 f NEC 10F TRANSITOR tda16846 p TDA16846 str TV SMPS DIODE D29 1684X 1684X abstract |
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| Abstract: the MOSFET, and the IC is supplied only by the auxiliary winding of the transformer via the diode D62 , high-efficiency, ultrafast diode 2 D57,D62 BAV103 BAV103 General-purpose rectifier 4 D58,D59,D60,D61 , 68R D62 BAV103 BAV103 + C80 68uF 400V R84 33K 2W D67 12Vz R81 1R5 C84 10nF 400V , D50 STTH802CFP STTH802CFP STMicroelectronics high-efficiency, ultrafast diode 1 D52 STTH302 STTH302 STMicroelectronics high-efficiency, ultrafast diode 1 D53 STTH1L06 STTH1L06 STMicroelectronics ultrafast ... | Original |
30 pages, |
STTH302 .33K 275V-X2 T4 PC817 smps tl431 pc817 transistor SMD t01 SMD L31 NTC15 BD139 heat sink TDK VFD TRANSFORMER smd transistor L34 SMD l34 Transistor L6668 NTC16 AN2600 L6668 AN2600 abstract |
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| Abstract: characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD , energy, repetitive t AR1),2) E AR I D=6.2 A, V DD=50 V 0.5 Avalanche current, repetitive t , I D=6.2 A, V DS=480 V, T j=125 °C 50 V/ns V GS static ±20 V V GS AC (f >1 , T j, T stg -55 . 150 °C Reverse diode dv/dt 7) dv/dt 15 Rev. 1.5 Page 1 V , V (BR)DS V GS=0 V, I D=6.2 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.26 mA ... | Original |
11 pages, |
transistor smd marking ds transistor smd code marking tm SPD06N60C3 Q67040-S4630 marking code br 39 SMD T R TRANSISTOR SMD MARKING CODE DF marking code smd transistor 06N60 smd transistor marking g12 06N60C3 SPD06N60C3 abstract |
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| Abstract: characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD , energy, repetitive t AR1),2) E AR I D=6.2 A, V DD=50 V 0.5 Avalanche current, repetitive t , I D=6.2 A, V DS=480 V, T j=125 °C 50 V/ns V GS static ±20 V V GS AC (f >1 , , I D=6.2 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.26 mA 2.1 3 3.9 Zero , 480 V V DD=480 V, V GS=10 V, I D=6.2 A, R G=12 ns Gate Charge Characteristics V DD=480 ... | Original |
11 pages, |
diode d39 PG-TO-220-3-1 Q67040-S4629 06n60c SPP06N60C3 TRANSISTOR SMD MARKING CODE G12 smd transistor marking G12 T R TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE df transistor smd marking ds 06N60 SMD TRANSISTOR MARKING code DD DF marking code smd transistor SPP06N60C3 abstract |
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| Abstract: 1700V-Types ,038 D60 SKM 75 GAL 123 D 1200 75 3,2 400 0,30 0,05 D62 SKM 100 GAL 123 D 1200 100 3,2 625 0,20 0,05 D62 ¡T SKM 100 GAL 163 D 1600 100 3,8 625 0,20 0,05 D62 T â- SKM 150 GAL 123 D , data apply to one single IGBT element 5> Option enlarged diode, add suffix "1" ^ Option collector ... | OCR Scan |
1 pages, |
SKM400GA123D GAL 200 gb js 1200 Semitrans Semitrans* IGBT skm 100 SKM4 skm 50 gd 123 d GB173 GB-123 SKM 300 CIRCUIT SKM 75 GAL 123 IGBT datasheet abstract |
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| Abstract: characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD , energy, repetitive t AR1),2) E AR I D=6.2 A, V DD=50 V 0.5 Avalanche current, repetitive t , I D=6.2 A, V DS=480 V, T j=125 °C 50 V/ns V GS static ±20 V V GS AC (f >1 , T j, T stg -55 . 150 °C Reverse diode dv/dt 7) dv/dt 15 Rev. 1.4 Page 1 V , V (BR)DS V GS=0 V, I D=6.2 A Gate threshold voltage V GS(th) V DS=V GS, I D=0.26 mA ... | Original |
11 pages, |
SPD06N60C3 Q67040-S4630 infineon marking TO-252 06N60C3 SMD TRANSISTOR MARKING code DD 06N60 SPD06N60C3 abstract |
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| Abstract: SPP06N60C3 SPP06N60C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=6.2 A , energy, repetitive t AR1),2) E AR I D=6.2 A, V DD=50 V 0.5 Avalanche current, repetitive t , diode dv/dt Rev. 1.4 50 V/ns static ±20 V AC (f >1 Hz) ±30 P tot 8) I D=6.2 A, V DS=480 V, T j=125 °C V GS Operating and storage temperature A V GS Power , uA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.2 A Gate threshold voltage V ... | Original |
11 pages, |
SPP06N60C3 smd transistor marking G12 Q67040-S4629 06N60C3 06N60 SPP06N60C3 abstract |
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| Abstract: characteristics of reverse diode V GS=f(Q gate); I D=6.2 A pulsed I F=f(V SD) parameter: V DD , AS I D=3.1 A, V DD=50 V 200 Avalanche energy, repetitive t AR1),2) E AR I D=6.2 A, V , Gate source voltage A mJ 6.2 A I D=6.2 A, V DS=480 V, T j=125 °C 50 V/ns V GS , Operating and storage temperature T j, T stg -55 . 150 °C Reverse diode dv/dt 5) dv/dt , uA Avalanche breakdown voltage V (BR)DS V GS=0 V, I D=6.2 A Gate threshold voltage V ... | Original |
11 pages, |
SPA06N60C3 PG-TO220-3-31 06N60C3 06N60 SPA06N60C3 abstract |
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| Abstract: °C Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 70 mJ Reverse diode dv , (on) V GS=-10 V, I D=-6.2 A - 221 300 m Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-6.2 A 2.4 4.8 - S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with , , f =1 MHz V DD=-30 V, V GS=10 V, I D=-6.2 A, R G=6 pF ns Gate Charge Characteristics V DD=-48 V, I D=-8.8 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current ... | Original |
8 pages, |
SPB08P06PG SPB08P06P 08P06P SPB08P06P abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
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| Schottky Diode 40V Low V F Low I R SOD923 NSR0140P2/D (62.0kB) 1 100 B) 4 100 100V, 60A SWITCHMODE Power Rectifier MBR60H100CT/D (62.0k © Package 1PMT5920B/D (62.0kB) 3 100 3.2 Watt Plastic Surface Mount POWERMITE® Package 1PMT5920BT3/D (62.0kB) 3 100 30 B) 4 100 Overvoltage Transient Suppressors MR2535L/D (62.0k www.datasheetarchive.com/files/on-semiconductor/taxonomy/diodes.htm |
On Semiconductor | 28/09/2007 | 80.98 Kb | HTM | diodes.htm |
| DFN Package NUF8401MN/D (62.0kB) 4 100 Low Capacitance Thyristor Surge Protectors MMT05A230T3/D (62.0kB) 5 100 Two Protection +4 ESD Diodes NUF4105FCT1/D NUF4105FCT1/D NUF4105FCT1/D NUF4105FCT1/D (82.0kB) 1 100 4 Channel /D (52.0kB) 0 100 Bidirectional ESD Protection Diode in SOD-523 Protection NZMM7V0T4/D (55.0kB) 6 100 ESD Protection Diodes In www.datasheetarchive.com/files/on-semiconductor/taxonomy/circuitprotection.htm |
On Semiconductor | 28/09/2007 | 28.53 Kb | HTM | circuitprotection.htm |
| Matte Tin Plating for Pb-Free Devices TND312/D (62.0kB) 1 100 Application Hints for Transient Voltage Suppression Diode Circuits AND8230/D AND8230/D AND8230/D AND8230/D (442.0kB) 0 DC-DC Converter for Driving High-Intensity Light-Emitting Diodes with the SEPIC Circuit AND (99.0kB) 0 100 FET Current Regulators - Circuits and Diodes the Performance of TVS Diodes AND8232/D AND8232/D AND8232/D AND8232/D (282.0kB) 0 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/others.htm |
On Semiconductor | 30/11/2007 | 21.62 Kb | HTM | others.htm |
| 6f4f6f 05866664c0052273856b2 da73ba7731f76c861650dc6e374bd8f a978e94c36773adbaefbc4a97d www.datasheetarchive.com/download/85961324-920482ZC/snam113.zip (LME49810.lib) |
Texas Instruments | 09/09/2012 | 28.23 Kb | ZIP | snam113.zip |
| 100 20V 3A LOW VCE(sat) PNP High Current Transistor NSS20300MR6T1G/D (62 NSS30071MR6T1G/D (62.0kB) 0 100 30V 700mA LOW VCE(sat) PNP /D (62.0kB) 2 100 Bipolar Power Transistors MMJT9410/D MMJT9410/D MMJT9410/D MMJT9410/D Complementary Silicon Plastic Power Transistors MJE2955T/D (62.0kB) 7 100 100 Driver Transistor NPN MMBTA05LT1/D (62.0kB) 3 100 www.datasheetarchive.com/files/on-semiconductor/taxonomy/bipolartransistors.htm |
On Semiconductor | 28/09/2007 | 122.37 Kb | HTM | bipolartransistors.htm |
| b396ebc7f900147 072134dfb536d62fd293e8dc9c8a36 f7f6c9cb4c0890477 $CDNENCFINISH .ENDS NAND3_0C2 *$ .SUBCKT NAND3_1C2 1 2 www.datasheetarchive.com/download/75716090-919555ZC/slum032.zip (ucc28c40.lib) |
Texas Instruments | 06/08/2011 | 101.86 Kb | ZIP | slum032.zip |
| ac5c 0657 $CDNENCFINISH .ENDS *$ .SUBCKT DIODE 1 2 $CDNENCSTART eee8c5c7a2bc4b01f045f303678664e7916da0bae22 2484f8b72bd3ce0b3acaef2327b70d96db191b0b $CDNENCFINISH .ENDS DIODE *$ www.datasheetarchive.com/download/97843354-922820ZC/tps54383_pspice_average_model.zip (tps54x8xpavg.lib) |
Texas Instruments | 11/08/2011 | 115.53 Kb | ZIP | tps54383_pspice_average_model.zip |
| c952445ecc85692ba0055d457f2992b352e 8591678a www.datasheetarchive.com/download/56288934-920955ZC/snom332.zip (lmh7324.lib) |
Texas Instruments | 03/07/2012 | 39.93 Kb | ZIP | snom332.zip |
| Interrupts 68HC05X4MSE2 68HC05X4MSE2 68HC05X4MSE2 68HC05X4MSE2 68HC05X16 68HC05X16 68HC05X16 68HC05X16 D62J A CAN Sensing Diode, Sample-and-Hold Capacitor, SIOP Interrupt 68HC05JJ6MSE1 68HC05JJ6MSE1 68HC05JJ6MSE1 68HC05JJ6MSE1 Temperature Sensing Diode, Sample-and-Hold Capacitor, SIOP Interrupt 68HC05JP6MSE1 68HC05JP6MSE1 68HC05JP6MSE1 68HC05JP6MSE1 www.datasheetarchive.com/files/motorola/docs/mse/hc05/hc05mse.htm |
Motorola | 15/02/2000 | 36.53 Kb | HTM | hc05mse.htm |
| 68HC05X4MSE2 68HC05X4MSE2 68HC05X4MSE2 68HC05X4MSE2 68HC05X16 68HC05X16 68HC05X16 68HC05X16 D62J A CAN 68HC05X16MSE1 68HC05X16MSE1 68HC05X16MSE1 68HC05X16MSE1 68HC05X32 68HC05X32 68HC05X32 68HC05X32 D53J D69J A CAN 68HC Diode, Sample-and-Hold Capacitor, SIOP Interrupt 68HC05JJ6MSE1 68HC05JJ6MSE1 68HC05JJ6MSE1 68HC05JJ6MSE1 68HC05JP6 68HC05JP6 68HC05JP6 68HC05JP6 0H96J 0H96J 0H96J 0H96J 1H96J 1H96J 1H96J 1H96J 2H96J 2H96J 2H96J 2H96J 3H96J 3H96J 3H96J 3H96J I I A I LPO Nominal Frequencies, LVI Hysteresis, Internal Temperature Sensing Diode, Sample www.datasheetarchive.com/files/motorola/cdcsic2/web/techhelp/mse/mse.htm |
Motorola | 23/04/1998 | 24.44 Kb | HTM | mse.htm |