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diode M4

Catalog Datasheet Results Type PDF Document Tags
Abstract: Qgd RthJC 0.2 RthCS ° C/W ° C/W 0.05 Source-Drain Diode (M4 screws (4x) supplied , Avalanche Rated Fast Intrinsic Diode = 500 V = 52 A 85 m ns 200 4 2 1 Symbol Test , , SOT-227 B (IXFN) E153432 E153432 1 2 4 3 1 = Source 2 = Gate 3 = Drain / Diode anode 4 = Diode / Diode cathode Features l Fast intrinsic diode in boost configuration · International standard , drive and to protect Advantages l l Easy to mount Space savings Tightly coupled FRED diode High ... Original
datasheet

2 pages,
108.63 Kb

uc pfc diode m4 64N50 datasheet abstract
datasheet frame
Abstract: laser basis of custom designed attachments in diode modules and laser diode packages. , user to www.photonic-products.com laser diode solutions datasheet posts clamps mounts.qxd , Part Number Post dia 177-0433-00 12 55 M4 m & f 177-0434-00 12 55 M6 m / M4 f 177-0435-00 12 55 M6 m & f 177-0436-00 12 80 M6 m / M4 f 177-0437-00 12 80 M4 m & f 177-0438-00 12 80 M6 m & f 177-0439-00 12 100 M6 m / M4 ... Original
datasheet

2 pages,
245.03 Kb

m4 diode 0441 diode M4 7ba Diode datasheet abstract
datasheet frame
Abstract: 15697-1800 (724) 925-7272 Three-Phase Diode Bridge Modules 40 Amperes/1200-1600 Amperes/1200-1600 Volts A D J L P - DIA. (2 TYP.) G C Q - M4 THD. (5 TYP.) M K H H B E RM20TPM-24 RM20TPM-24, RM20TPM-2H RM20TPM-2H Three-Phase Diode Bridge Modules 40 Amperes/1200-1600 Amperes/1200-1600 Volts F Description: Powerex Three-Phase Diode , threephase bridge circuit. Each diode is electrically insulated from the mounting baseplate for easy , Ampere ThreePhase Diode Bridge Module. 20 H UPS 15 J 0.57 14.5 K 0.53 13.5 ... Original
datasheet

2 pages,
61.33 Kb

RM20TPM-2H RM20TPM-24 AC TO DC DIODE BRIDGE diode bridge Amperes/1200-1600 RM20TPM-24 abstract
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Abstract: ) 925-7272 Three-Phase Diode Bridge Modules 40 Amperes/800 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N E F RM20TPM-H RM20TPM-H Three-Phase Diode Bridge Modules 40 Amperes/800 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for , diode is electrically insulated from the mounting baseplate for easy mounting on a common heatsink , from the table below. Example: RM20TPM-H RM20TPM-H is an 800 Volt, 40 Ampere Three-Phase Diode Bridge Module. ... Original
datasheet

2 pages,
60.85 Kb

three phase bridge inverter RM20TPM-H peak m4 diode M4 diode bridge m4 diode Amperes/800 RM20TPM-H abstract
datasheet frame
Abstract: Three-PhaSe Diode Bridge Module 40 Amperes/1600 Amperes/1600 !ts Outline Drawing Dimension Inches Millimeters A 2.76 70 B , 10 M 0,31 8 RM20TPM-2H RM20TPM-2H Three-Phase Diode Bridge Module 40 Amperes/1600 Amperes/1600 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in applications requiring rectification of three-phase , complete three-phase bridge circuit. Each diode is electrically insulated from the mounting baseplate for , is a 1600 Volt, 40 Ampere Three-Phase Diode Bridge Module. Current Bating Voltage Type Amperes (x2 ... OCR Scan
datasheet

2 pages,
177.33 Kb

RM20TPM-2H Diode Bridge RM20TPM-2H abstract
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Abstract: Fast Recovery Single Diode Module 200 Amperes/1000 Amperes/1000 Volts Description: Powerex Fast Recovery Single Diode Modules are designed for use in applications requiring fast switching. The modules are , H N - DIA. J (3 TYP.) R - M4 THD (3 TYP.) L (2 TYP.) Q Features: K D , Recovery Single Diode Module. ? Dimension CS241020 CS241020 Fast Recovery Single Diode Module 200 , 7 R6 5.3 Dia. 5.3 P 0.177 4.5 Q 0.138 3.5 R M4 Metric M4 D-17 ... Original
datasheet

2 pages,
60.19 Kb

D-18 CS241020 Module, Diode 200A, 600V Single, Amperes/1000 CS241020 abstract
datasheet frame
Abstract: Three-Phase Diode Bridge Module 60 Amperes/800 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N F E MEB00806 MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in , diodes and the interconnect required to form a complete threephase bridge circuit. Each diode is , from the table below. Example: MEB00806 MEB00806 is an 800 Volt, 60 Ampere Three-Phase Diode Bridge Module. ... Original
datasheet

4 pages,
66.39 Kb

three phase ups MEB00806 diode bridge AC TO DC DIODE BRIDGE 7272 diode 009 D74 DIODE Amperes/800 MEB00806 abstract
datasheet frame
Abstract: Three-Phase Diode Bridge Module 60 Amperes/800 Amperes/800 Volts A D J L P - DIA. (2 TYP.) G Q - M4 THD. (5 TYP.) K C M H H B N F E MEB00806 MEB00806 Three-Phase Diode Bridge Module 60 Amperes/800 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in , diodes and the interconnect required to form a complete threephase bridge circuit. Each diode is , from the table below. Example: MEB00806 MEB00806 is an 800 Volt, 60 Ampere Three-Phase Diode Bridge Module. ... Original
datasheet

4 pages,
66.26 Kb

MEB00806 m4 diode 7272 Amperes/800 MEB00806 abstract
datasheet frame
Abstract: SanRex® Fast & Soft Recovery Diode DBA200UA60 DBA200UA60 IF(AV)= 2x100A, V RRM=600V, trr=150ns SanRex Fast & Soft Recovery Diode Module DBA200UA60 DBA200UA60 is designed for applications requiring fast switching and , (UPS) * Free Wheeling Diode in converters and motor control circuits Internal schematic diagram , (for fusing) Junction Temperature Conditions Tj = 25 C (unless otherwise noted) per diode , surge current Storage Temperature Isolation Voltage (R.M.S.) Mounting Mounting M4 Torque Terminal ... Original
datasheet

2 pages,
118.37 Kb

CIRCUIT DIAGRAM UPS power recovery diode DC chopper ups schematic diagram forward reverse schematic diagram UPS circuit diagram schematic diagram reverse forward motor welding machine diagram Fast Recovery Rectifier, 300V fast diode SOT-227 schematic diagram UPS Control plasma cutting DBA200UA60 DBA200UA60 DBA200UA60 abstract
datasheet frame
Abstract: SanRex® Fast & Soft Recovery Diode DBA200UA40 DBA200UA40 IF(AV)= 2x100A, V RRM=400V, trr=100ns SanRex Fast & Soft Recovery Diode Module DBA200UA40 DBA200UA40 is designed for applications requiring fast switching and , (UPS) * Free Wheeling Diode in converters and motor control circuits Internal schematic diagram , (for fusing) Junction Temperature Conditions Tj = 25 C (unless otherwise noted) per diode , surge current Storage Temperature Isolation Voltage (R.M.S.) Mounting Mounting M4 Torque Terminal ... Original
datasheet

2 pages,
119.14 Kb

schematic diagram UPS Control forward reverse schematic diagram DBA200UA40 SanRex SOT-227 Package schematic diagram reverse forward motor fast diode SOT-227 AC to DC smps circuit diagram DBA200UA40 abstract
datasheet frame

Datasheet Content (non pdf)

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): P1 P2 P4 VEE REF OUT VCC M4 M2 M1 .SUBCKT LT1995 LT1995 LT1995 LT1995 1 2 3 4 5 6 7 8 9 10 RP1 1 203 4k RP2 2 203 2k 0.5p RM1 10 202 4k RFB 202 6 4k CFB 202 6 0.5p DP11 1 7 DIODE DP21 2 7 DIODE DP41 3 7 DIODE DM11 10 7 DIODE DM21 9 7 DIODE DM41 8 7 DIODE DP12 4 1 DIODE DP22 4 2 DIODE DP42 4 3 DIODE DM12 4 10 DIODE DM22 4 9 DIODE DM42 4 8 DIODE DREF1 5 7 DIODE DREF2 4 5 DIODE * INPUT RC1 7 80 5.6841E 6841E 6841E 6841E+02 BV=4.3200E 3200E 3200E 3200E+01) .MODEL DM3 D (IS=1.0000E-16 0000E-16 0000E-16 0000E-16) .MODEL DIODE D (KF=0 RS=1E-4) .ENDS LT1995 LT1995 LT1995 LT1995
www.datasheetarchive.com/files/linear/docs/software and simulation/lt1995.txt
Linear 28/02/2008 2.21 Kb TXT lt1995.txt
): P1 P2 P4 VEE REF OUT VCC M4 M2 M1 .SUBCKT LT1995 LT1995 LT1995 LT1995 1 2 3 4 5 6 7 8 9 10 RP1 1 203 4k RP2 2 203 2k 0.5p RM1 10 202 4k RFB 202 6 4k CFB 202 6 0.5p DP11 1 7 DIODE DP21 2 7 DIODE DP41 3 7 DIODE DM11 10 7 DIODE DM21 9 7 DIODE DM41 8 7 DIODE DP12 4 1 DIODE DP22 4 2 DIODE DP42 4 3 DIODE DM12 4 10 DIODE DM22 4 9 DIODE DM42 4 8 DIODE DREF1 5 7 DIODE DREF2 4 5 DIODE * INPUT RC1 7 80 5.6841E 6841E 6841E 6841E+02 BV=4.3200E 3200E 3200E 3200E+01) .MODEL DM3 D (IS=1.0000E-16 0000E-16 0000E-16 0000E-16) .MODEL DIODE D (KF=0 RS=1E-4) .ENDS LT1995 LT1995 LT1995 LT1995
www.datasheetarchive.com/files/linear/documents/d19260/lt1995.txt
Linear 09/02/2007 2.21 Kb TXT lt1995.txt
Repetitive peak forward current tp 3 10 m s 800 A I F(RMS) RMS forward current Per diode 140 A I F(AV) Average forward current Tc=80 5 C d = 0.5 Per diode 60 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 600 A Tstg Tj Storage and junction temperature range - 40 to + 150 - 40 ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 0.7 5 C/W Total
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2959-v1.htm
STMicroelectronics 02/04/1999 6.56 Kb HTM 2959-v1.htm
F(RMS) RMS forward current Per diode 70 A I F(AV) Average forward current Tc=55 5 C d = 0.5 Per diode 30 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 200 A Tstg Tj Storage cycle < 2 % * tp = 5 ms, duty cycle < 2 % ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS ) Junction to case Per diode 1.5 5 C/W Total 0.8 Rth (c) Coupling 0.1 5 C/W When the diodes 1 and 2 are used simultaneously : D Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE Symbol Test
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2956-v1.htm
STMicroelectronics 02/04/1999 6.36 Kb HTM 2956-v1.htm
Repetitive peak forward current tp 3 10 m s 800 A I F(RMS) RMS forward current Per diode 140 A I F(AV) Average forward current Tc=80 5 C d = 0.5 Per diode 60 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 600 A Tstg Tj Storage and junction temperature range - 40 to + 150 - 40 ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit trr RECOVERY CHARACTERISTICS Symbol Parameter Value Unit Rth (j-c) Junction to case Per diode 0.7 5 C/W Total
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2959-v2.htm
STMicroelectronics 14/06/1999 6.53 Kb HTM 2959-v2.htm
F(RMS) RMS forward current Per diode 70 A I F(AV) Average forward current Tc=55 5 C d = 0.5 Per diode 30 A I FSM Surge non repetitive forward current tp=10ms sinusoidal Per diode 200 A Tstg Tj Storage cycle < 2 % * tp = 5 ms, duty cycle < 2 % ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS ) Junction to case Per diode 1.5 5 C/W Total 0.8 Rth (c) Coupling 0.1 5 C/W When the diodes 1 and 2 are used simultaneously : D Tj(diode 1) = P(diode) x Rth(Per diode) + P(diode 2) x Rth(c) THERMAL RESISTANCE Symbol Test
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/2956-v2.htm
STMicroelectronics 14/06/1999 6.33 Kb HTM 2956-v2.htm
Datasheet DIODE / THYRISTOR MODULE 3032 01/07/1995 7 Raw Text Format MDS35 MDS35 MDS35 MDS35 DIODE / THYRISTOR MODULE April (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode (I) 4 : Diode Anode(A) Symbol V (RMS) FEATURES DESCRIPTION The MDS35 MDS35 MDS35 MDS35 family are constitued of one rectifier diode and general ELECTRICAL CHARACTERISTICS (DIODE) Symbol Test Conditions Value Unit I GT V D =12V (DC) R L =33 W
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3032-v1.htm
STMicroelectronics 20/10/2000 10.91 Kb HTM 3032-v1.htm
(Thyristor or Diode) MDS50 MDS50 MDS50 MDS50 5/7 K L G M O OJ / OI / OI / H B A D E F screw H M4 C P PACKAGE MECHANICAL DATA MDS50-1000 MDS50-1000 MDS50-1000 MDS50-1000 MDS50-1200 MDS50-1200 MDS50-1200 MDS50-1200 MDS50-800 MDS50-800 MDS50-800 MDS50-800 MDS50 MDS50 MDS50 MDS50 DIODE / THYRISTOR MODULE Document Number following formats: Portable Document Format and Raw Text Format MDS50 MDS50 MDS50 MDS50 DIODE / THYRISTOR MODULE PIN CONNECTIONS 1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode (I) 4 : Diode Anode(A) Symbol Parameter MDS50 MDS50 MDS50 MDS50 Unit -800 -1000 -1200 V DRM V RRM Repetitive peak
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3033.htm
STMicroelectronics 02/04/1999 8.64 Kb HTM 3033.htm
Datasheet DIODE / THYRISTOR MODULE 3033 01/07/1995 7 Raw Text Format MDS50 MDS50 MDS50 MDS50 DIODE / THYRISTOR MODULE April (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode (I) 4 : Diode Anode(A) Symbol 2500 V (RMS) FEATURES DESCRIPTION The MDS50 MDS50 MDS50 MDS50 family are constitued of one rectifier diode and THERMAL RESISTANCES ELECTRICAL CHARACTERISTICS (DIODE) Symbol Test Conditions Value Unit I GT V D
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3033-v1.htm
STMicroelectronics 20/10/2000 10.89 Kb HTM 3033-v1.htm
(Thyristor or Diode) MDS50 MDS50 MDS50 MDS50 5/7 K L G M O OJ / OI / OI / H B A D E F screw H M4 C P PACKAGE MECHANICAL DATA MDS50-1000 MDS50-1000 MDS50-1000 MDS50-1000 MDS50-1200 MDS50-1200 MDS50-1200 MDS50-1200 MDS50-800 MDS50-800 MDS50-800 MDS50-800 MDS50 MDS50 MDS50 MDS50 DIODE / THYRISTOR MODULE Document Number following formats: Portable Document Format and Raw Text Format MDS50 MDS50 MDS50 MDS50 DIODE / THYRISTOR MODULE PIN CONNECTIONS 1 : Thyristor Gate (G) 2 : Thyristor Cathode (K) 3 : Thyristor Anode/Diode Cathode (I) 4 : Diode Anode(A) Symbol Parameter MDS50 MDS50 MDS50 MDS50 Unit -800 -1000 -1200 V DRM V RRM Repetitive peak
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3033-v2.htm
STMicroelectronics 14/06/1999 8.61 Kb HTM 3033-v2.htm