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CD4007UBE Texas Instruments CMOS Dual Complementary Pair Plus Inverter 14-PDIP -55 to 125 ri Buy
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diode IN 4007

Catalog Datasheet Results Type PDF Document Tags
Abstract: disconnection DQS 2 = Diode plug for cross-connection mm (in.) mm (in.) 6.5 (.26) 8 (.31) 0.5.4 mm2 , V 4 mm2 Type DLS 2 DLS 2 with wire link DLS 2 with diode 1 N 4007 DLS 2 with diode 1 N 4007 SAKR-D , wire link DLS 2 with diode 1 N 4007 DLS 2 with diode 1 N 4007 SAKR-D, TS 35 with DLS 2 054776 SAKR-D , N 4007 WSD 2.5 with diode 1 N 4007 WTR 2.5 D with WSD 2.5 105856 WTR 2.5 D with WSD 2.5 105846 WTR , 4007 WTR 2.5 D 8016820000 -H 0547760000 -w05477 60000 -w 1058460000 -Kb with diode 1 N ... OCR Scan
datasheet

1 pages,
535.19 Kb

IN 4007 diodes n 4007 in 4007 diode diode N 4007 diode 4007 diode IN 4007 datasheet abstract
datasheet frame
Abstract: SUFA 4001 . SUFA 4007 Surface mount diode Ultrafast Avalanche Diode SUFA 4001.SUFA 4007 Forward Current: 1 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 08-03-2007 MAM © by SEMIKRON SUFA 4001 . SUFA 4007 Fig. 1 Forward characteristics (typical values) 2 Fig. 2 Rated forward current vs. temp. of the ... Original
datasheet

2 pages,
174.38 Kb

diode 4001 diode "IN 4007" diode IN 4001 IN 4007 diode data 4001 diode IN 4001 diode in 4007 diode diode IN 4007 diode 4007 datasheet abstract
datasheet frame
Abstract: SUF 4001 . SUF 4007 Surface mount diode Ultrafast silicon rectifier diodes SUF 4001 . SUF 4007 Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Forward Current: 1 A Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) Dimensions in mm 2) 3) 4) 1 05-03-2004 MAM © by SEMIKRON SUF 4001 . SUF 4007 Fig. 1 Forward characteristics ( typical values ) 2 Fig. 2 Rated forward current ... Original
datasheet

2 pages,
126.14 Kb

4001 diode IN 4007 diodes in 4007 diode diode "IN 4007" 4001 diodes 4001 4001 silicon diode 4007 SILICON DIODES diode 4007 diode IN 4007 diode 4001 in 4007 rectifier diode SUF 4007 datasheet abstract
datasheet frame
Abstract: 1N 4001.1N 4007, 1N 4007-1300 Axial lead diode Standard silicon rectifier diodes 1N 4001.1N 4007, 1N 4007-1300 Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Forward Current: 1 A Values Units Reverse Voltage: 50 to 1300 V Features Mechanical Data 1) 2) 3) 1 Dimensions in mm 13-02-2004 MAM © by SEMIKRON 1N 4001.1N 4007, 1N 4007-1300 Fig. 1 Forward characteristics ( typical values ) Fig. 2 Rated ... Original
datasheet

2 pages,
124.77 Kb

IN 4007 diodes 1N diode 4007 RECTIFIER DIODE 1N 40011n 1n 4007 diode in 4007 diode diode 1N 4001 diode 4007 diode IN 4007 datasheet abstract
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Abstract: UF 4001.UF 4007 Axial lead diode Ultrafast silicon rectifier diodes Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions UF 4001.UF 4007 Values Units Forward Current: 1 A Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) Dimensions in mm 3) 1 05-03-2004 MAM © by SEMIKRON UF 4001.UF 4007 Fig. 1 Forward characteristic ( typical values ) 2 Fig. 2 Rated forward current vs. ambient ... Original
datasheet

2 pages,
113.54 Kb

uf 4007 rectifier diode 4007 uf 4001 diode IN 4001 4007 4001 silicon diode diode 4007 diode 4001 diode IN 4007 diode UF-4007 datasheet abstract
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Abstract: SM 4001.SM 4007 Surface mount diode Standard silicon rectifier diodes SM 4001.SM 4007 Forward Current: 1 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 25-03-2004 SCT © by SEMIKRON SM 4001.SM 4007 Fig. 1 Forward characteristics ( typical values ) 2 Fig. 2 Rated forward current vs. temp. of the ... Original
datasheet

2 pages,
103.18 Kb

sm 4007 DIODE sm 4007 datasheet in 4007 rectifier diode 4007 4001 silicon diode 4001 4001 diode diode IN 4007 DIODE 4007 datasheet abstract
datasheet frame
Abstract: SAM 4001 . SAM 4007 Surface mount diode Standard Avalanche Diodes SAM 4001 . SAM 4007 Forward Current: 1 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 05-03-2007 MAM © by SEMIKRON SAM 4001 . SAM 4007 Fig. 1 Forward characteristics (typical values) 2 Fig. 2 Rated forward current vs. temp. of the ... Original
datasheet

2 pages,
134.29 Kb

IN 4007 diodes diode 4001 diode "IN 4007" 4001 in 4007 diode diode IN 4007 diodes in 4007 diode 4007 datasheet abstract
datasheet frame
Abstract: UF 4001.UF 4007, UF 4007-1200 Axial lead diode Ultrafast silicon rectifier diodes UF 4001.UF 4007, UF 4007-1200 Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Forward Current: 1 A Values Units Reverse Voltage: 50 to 1200 V Features Mechanical Data 1) 2) 3) 1 Dimensions in mm 12-04-2005 TGR © by SEMIKRON UF 4001.UF 4007, UF 4007-1200 Fig. 1 Forward characteristic ( typical values ) 2 Fig. 2 ... Original
datasheet

2 pages,
113.66 Kb

uf 4007 UF 4001 4001 in 4007 rectifier diode diode UF-4007 4007 in 4001 rectifier diode in 4007 diode diode IN 4001 diode 4001 IN 4007 diode data 4007 uf 1200 diode 4007 UF 4007 Diode datasheet abstract
datasheet frame
Abstract: Diode Modules EMG .-DIO 1. Description Diode circuits carry out various tasks in electrical and, in particular, electronic control systems, such as: ­ Electrical decoupling of messages in alarm , valves, DC relays or similar. In order to meet these requirements, diode modules are available as , * * Description Diode Type With 8 or 14 diodes Module width 45 mm (1.772 in.) U [V] [mm2 , width 90 mm (3.543 in.) Diode modules with 32 diodes With positive polarity (common cathode) With ... Original
datasheet

5 pages,
183.18 Kb

1A DIODE 1N 4E-1N5408 5408 diode 7M 250 90-DIO17E 1N5408 Diode 1N5408 1N 4007 diode 45-DIO8E-1N5408 22-DIO 22-DIO4P-1N5408 45-DIO8P-1N5408 4M-1N5408 din 4007 diode 4007 datasheet abstract
datasheet frame
Abstract: I [A] 26 U [V] 500 ) 1 2 [mm ] solid Connection data 0.2-4 Diode type fitted 1N 4007 , integrated diode 1N 4007, conducting direction from top to bottom Terminal block, with integrated diode 1N 4007, conducting direction from bottom to top Terminal block, with two integrated diodes 1N 4007 , Height (NS 35:7.5 / NS 35:15 / NS 32 / NS 15) Technical data in accordance with IEC/ DIN VDE Maximum load ... Original
datasheet

3 pages,
99.19 Kb

MBKK in 4007 diode diode IN 4007 din 4007 datasheet abstract
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diode configurations Single diode packages: SOD323, SCD80 SCD80 SCD80 SCD80 Diode arrays in SOT363, SOT23, SOT143 BAS 40-07 Silicon AF Schottky diode for BAS 140W Silicon AF Schottky diode for BAS 170W Silicon AF Schottky diode for BAS 40 Silicon AF Schottky diode for
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1839.htm
Infineon 26/10/2000 62.13 Kb HTM pro~1839.htm
diode configurations Single diode packages: SOD323, SCD80 SCD80 SCD80 SCD80 Diode arrays in SOT363, SOT23, SOT143 BAS 40-07 Silicon AF Schottky diode for BAS 140W Silicon AF Schottky diode for BAS 170W Silicon AF Schottky diode for BAS 40 Silicon AF Schottky diode for
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1465.htm
Infineon 26/10/2000 61.6 Kb HTM pro~1465.htm
diode configurations Single diode packages: SOD323, SCD80 SCD80 SCD80 SCD80 Diode arrays in SOT363, SOT23, SOT143 BAS 40-07 Silicon AF Schottky diode for BAS 140W Silicon AF Schottky diode for BAS 170W Silicon AF Schottky diode for BAS 40 Silicon AF Schottky diode for
www.datasheetarchive.com/files/infineon/wwwinf~1.com/produc~1/pro~1896.htm
Infineon 26/10/2000 61.6 Kb HTM pro~1896.htm
05.95 BAS 40 BAS 40-04 (Dual) BAS 40-05 (Dual) BAS 40-06 (Dual) BAS 40-07 (Dual) HiRel mixing 144 K 02.96 BAS 40-07W General-purpose diode for high-speed switching. Circuit 04.98 BAS 70-04S 70-04S 70-04S 70-04S General-purpose diode for high-speed switching. Circuit protection. General-purpose diode for high-speed switching. Circuit protection. Voltage clamping. High-level detecting and diode for high-speed switching. Circuit protection. Voltage clamping. High-level detecting and mixing.
www.datasheetarchive.com/files/infineon/products/35/35211.htm
Infineon 26/11/1998 8.87 Kb HTM 35211.htm
144 K 02.96 BAS 40-07 (Dual) General-purpose diodes for high-speed switching. Circuit 60A Rectifier Schottky diode with extreme low V F drop for mobile communication. For power supply. For clamping and protection in low voltage applications. For detection and step-up-conversion. 30 K 06.97 BAT 60B Rectifier Schottky diode for mobile communication. Low voltage high inductance. For power supply. For clamping and protection in low voltage applications. For
www.datasheetarchive.com/files/siemens/products/35/35211.htm
Siemens 26/02/1998 10.66 Kb HTM 35211.htm
forward secondary diode that anticipate the Q1 turn-on time. In fact, when the floating mos, Q2, turns- associated energy is delivered to the secondary. Fig 4 shows the current in the forward diode and Q1 gate Date Update: 20/12/97 Pages: 10 The document is available in the following formats level, 150W, the single transistor forward converter represents, in addi - tion to the high frequency 50% duty cycle barrier, typical of this topology, reaching in some cases the 70% of max. duty cycle.
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4744-v2.htm
STMicroelectronics 14/06/1999 15.71 Kb HTM 4744-v2.htm
forward secondary diode that anticipate the Q1 turn-on time. In fact, when the floating mos, Q2, turns- associated energy is delivered to the secondary. Fig 4 shows the current in the forward diode and Q1 gate Date Update: 20/12/97 Pages: 10 The document is available in the following formats level, 150W, the single transistor forward converter represents, in addi - tion to the high frequency 50% duty cycle barrier, typical of this topology, reaching in some cases the 70% of max. duty cycle.
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4744-v1.htm
STMicroelectronics 02/04/1999 15.75 Kb HTM 4744-v1.htm
secondary. Fig 4 shows the current in the forward diode and Q1 gate voltage; it is also possible to see represents, in addi - tion to the high frequency operation, the best so - lution. Moreover, with the help , reaching in some cases the 70% of max. duty cycle. TOPOLOGY OVERVIEW The single switch forward ultrafast high voltage diode is requested too. The second method is a dissipative clamp, with power losses level shifter driver, driving a source floating power Mos transistor, with the clamp capacitance in
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4744.htm
STMicroelectronics 20/10/2000 18.51 Kb HTM 4744.htm
Fig 4 shows the current in the forward diode and Q1 gate voltage; it is also possible to see that forward converter represents, in addi - tion to the high frequency operation, the best so - lution. , typical of this topology, reaching in some cases the 70% of max. duty cycle. TOPOLOGY OVERVIEW The well coupled to the primary winding. An ultrafast high voltage diode is requested too. The second floating power Mos transistor, with the clamp capacitance in series to the drain. A level shifter
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4744-v3.htm
STMicroelectronics 25/05/2000 17.58 Kb HTM 4744-v3.htm
96 BAS 40-07 (Dual) Mai 91
www.datasheetarchive.com/files/siemens/img/text
Siemens 27/02/1997 189.62 Kb text