500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

Direct from the Manufacturer

Part Manufacturer Description PDF Samples Ordering
1N5222B_T50A Fairchild Semiconductor Corporation Zener Diode pdf Buy
1N5222B_T50R Fairchild Semiconductor Corporation Zener Diode pdf Buy
1N5224B_T50R Fairchild Semiconductor Corporation Zener Diode pdf Buy

Search Stock

Part Manufacturer Description Last Check Distributor Ordering
DIODE COMPENSATED DEVICES BULK BAG/SEC PKG/AXIAL 1 (Sep 2016) New Advantage Buy
DIODE Microsemi BULK BAG/SEC PKG/AXIAL 1 (Sep 2016) New Advantage Buy
DIODE / GLASS PKG / DO-213AA MICROSEMI BULK / SEC. PKG 20 (Sep 2016) New Advantage Buy
DIODE / MGRG2025D Knox Semiconductor TRAYS / ORG. PKG 19,257 (Sep 2016) New Advantage Buy
DIODE KIT Jameco 420 PIECE DIODE COMPONENT KIT 40 from $39.95 (Sep 2016) Jameco Electronics Buy
DIODESKITFS Fairchild Semiconductor KIT DIODE 10EA OF 10 VALUES 3 from $13.00 (Sep 2016) Digi-Key Buy

diode 4007

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: V 4 mm2 Type DLS 2 DLS 2 with wire link DLS 2 with diode 1 N 4007 DLS 2 with diode 1 N 4007 SAKR-D , wire link DLS 2 with diode 1 N 4007 DLS 2 with diode 1 N 4007 SAKR-D, TS 35 with DLS 2 054776 SAKR-D , N 4007 WSD 2.5 with diode 1 N 4007 WTR 2.5 D with WSD 2.5 105856 WTR 2.5 D with WSD 2.5 105846 WTR , 4007 WTR 2.5 D 8016820000 -H 0547760000 -w05477 60000 -w 1058460000 -Kb with diode 1 N , 4007 -Wwith test sockets and Diode 1 N 4007 WTR 2.5 D 10147 -H with test sockets and Diode 1 N ... OCR Scan
datasheet

1 pages,
535.19 Kb

diode "IN 4007" diode n 4007 KH 4007 diode N 4007 in 4007 diode IN 4007 diodes diode 4007 diode IN 4007 TEXT
datasheet frame
Abstract: Diode logic modules Di od M eL od og ule ic s 15 Index Logical signal conditioners , conditioners Diode modules Series 10 000, DIN 1-3 EB 4 D Spacing 18 mm .709" Diode module with common on anode Diode module with common on cathode EB 7 DA Diode module EB 7 DC Spacing 18 mm .709" Spacing 18 mm .709" Diodes 1 N 4007 Diodes 1 N 4007 Diodes 1 N 4007 Functions , 15 Logical signal conditioners Diode modules Series 11 000, DIN 1-3 EB 6 D Spacing 22.5 mm ... ABB Group
Original
datasheet

8 pages,
798.88 Kb

1SNA010135R1000 1SNA020023R1500 1SNA011056R1100 1SNA020265R0400 marking eB diode 1SNA020263R0200 n 4007 dc bfm 1SNA020025R1700 diode in 4007 diode 4007 1SNA020021R1300 1SNA010134R1700 diode N 4007 in 4007 diode din 4007 diode 4007 DATASHEET Diode BFM entrelec diode TEXT
datasheet frame
Abstract: BAS 40-07 Silicon Schottky Diode 3 · General-purpose diode for high-speed switching · , BAS 40-07 4 1 3 2 EHA07008 EHA07008 Type Marking BAS 40-07 47s Pin Configuration 1=C1 2=C2 3=A2 Package 4=A1 SOT-143 Maximum Ratings Parameter Symbol Diode reverse , -07-1999 BAS 40-07 Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Parameter , - AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = ... Infineon Technologies
Original
datasheet

4 pages,
84.37 Kb

VPS05178 diode 4007 TEXT
datasheet frame
Abstract: Diode Modules EMG .-DIO 1. Description Diode circuits carry out various tasks in electrical , valves, DC relays or similar. In order to meet these requirements, diode modules are available as "diode gates" with combined positive or negative polarity or as diodes that can be freely assigned , 12 00 www.phoenixcontact.com Diode Modules EMG 22-DIO 22-DIO 2. Technical Data for EMG 22-DIO 22-DIO 1 , electrical data is determined by the module. * * Description Diode Type With 4 or 7 diodes ... Phoenix Contact
Original
datasheet

5 pages,
183.18 Kb

5408 diode 1N5408 Diode 1N5408 7M 250 90-DIO17E 45-DIO8E-1N5408 22-DIO4P-1N5408 22-DIO IN 4007 diodes in 4007 diode 4M-1N5408 diode IN 4007 diode 4007 diode 22-DIO4E-1N5408 DIODE IN 5408 din 4007 45-DIO8M-1N5408 45-DIO8P-1N5408 22-DIO4M-1N5408 diode 1N5408 specifications TEXT
datasheet frame
Abstract: 1 _(•* 8 - 9 mm / 0.33 in 4-conductor diode terminal block with diode 1 N 4007 Circuit lf , diode 1 N 4007 Circuit lr grey 279-673/281 -410 Circuit II, grey 279-673/281 -411 100 100 , -conductor diode terminal block with diode 1 N 4007 Circuit 1, grey 279-815/281-410 Circuit II, grey 279-815 , Diode- and LED Terminal Blocks 22 Front-entry 0.08 - 1 .5 m m 2 | AW G 28 -1 6 UN 250 V ;U im 1000 V 1 N 4007 - 0.5 A Continuous current Terminal block width 4 mm / 0.157 in I_ 1* 8 - 9 mm ... OCR Scan
datasheet

2 pages,
111.16 Kb

TEXT
datasheet frame
Abstract: ) Diode Terminal color 1 N 4007 1 N 4007 1 N 4007 beige Ordering data Type Part No. Type Part , With diodes (other versions on request) DK 4 D WDK 2.5 D Diode terminal, i.e. as reverse , cross-section Conductor cross-section VDE rated data Voltage Diode reverse voltage Diode current Current of , . COMPONENTS Terminal Blocks With diodes (other versions on request) DK 4 D WDK 2.5 D Diode terminals for lamp test circuits DK 4 D WDK 2.5 D Diode terminals for lamp test circuits DK 4 D WDK 2.5 D ... OCR Scan
datasheet

2 pages,
1281.89 Kb

solenoid valves IN 4007 DC diode n 4007 diode N 4007 diode 4007 details TEXT
datasheet frame
Abstract: without components 50 DLS 2 0547660000 with wire link 50 DLS 2 0630160000 with diode 50 1 N 4007 DLS 2 0547760000 with diode 50 1 N 4007 SAKR-D, TS 32 0263660000 with DLS 2 25 054776 ­ , 0547660000 with wire link 50 DLS 2 0630160000 with diode 10 1 N 4007 DLS 2 0547760000 with diode , components ­ WSD 2.5 1058660000 with wire link ­ WSD 2.5 1058560000 with diode ­ 1 N 4007 WSD 2.5 1058460000 with diode ­ 1 N 4007 WTR 2.5 D 1013500000 with WSD 2.5 100 105856 WTR 2.5 D 1013600000 ... Weidmüller
Original
datasheet

16 pages,
481.52 Kb

IEC 947-7-1 terminal block 0383560000 1166560000 EW-15 CORE EW NPN PT-100 temperature 5k potentiometer 0395860 PT-100 temperature sensor 8109130000 n 4007 insulation monitoring device diode 4007 details 102330 053886 1027700000 SAKT E/35 KRG dk qb TEXT
datasheet frame
Abstract: 063016 mit Diode 50 1 N 4007 DLS 2 054776 mit Diode 50 1 N 4007 SAKR-D, TS 32 026366 mit DLS 2 , 063016 mit Diode 10 1 N 4007 DLS 2 054776 mit Diode 50 1 N 4007 SAKR-D, TS 35 029956 mit DLS 2 , ohne Einbau ­ WSD 2.5 105866 mit Drahtbrücke ­ WSD 2.5 105856 mit Diode ­ 1 N 4007 WSD 2.5 105846 mit Diode ­ 1 N 4007 WTR 2.5 D 101350 mit WSD 2.5 100 105856 WTR 2.5 D 101360 mit WSD , mit Prüfbuchsen ­ und WSD 2.5 105866 Typ WTR 2.5 D mit Diode 1 N 4007 WTR 2.5 D 801682 ... Original
datasheet

14 pages,
767.2 Kb

056-95 102260 WDK 2.5 35x7 801694 ad 3x15 DK 4 D 046798 033650 038340 048270 101360 033470 abiso* transform* 35 115 056956 dk qb n 4007 053886 102350 052640 TEXT
datasheet frame
Abstract: Module no:2800567 LabelId:2800567 Operator:Phoenix 17:52:53, Donnerstag, 28. Juni 2001 MBKKB 2,5 DIO with integrated diodes Terminal width 5.2 (IEC) rigid flexible stranded AWG 0.2-2.5 24-12 I [A] 26 U [V] 500 ) 1 2 [mm ] solid Connection data 0.2-4 Diode type fitted 1N 4007 , integrated diode 1N 4007, conducting direction from top to bottom Terminal block, with integrated diode 1N 4007, conducting direction from bottom to top Terminal block, with two integrated diodes 1N 4007 ... Phoenix Contact
Original
datasheet

3 pages,
99.19 Kb

MBKK diode 4007 diode in 4007 diode diode IN 4007 din 4007 TEXT
datasheet frame
Abstract: SUFA 4001 . SUFA 4007 Surface mount diode Ultrafast Avalanche Diode SUFA 4001.SUFA 4007 Forward Current: 1 A Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions Values Units Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) 3) 4) 1 Dimensions in mm 23-04-2009 MAM © by SEMIKRON SUFA 4001 . SUFA 4007 Fig. 1 Forward characteristics (typical values) 2 Fig. 2 Rated forward current vs. temp. of the ... SEMIKRON
Original
datasheet

2 pages,
174.37 Kb

TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
BAS 40-07  Silicon AF Schottky diode for high-speed Features: Single, double, triple and quadruple diode configurations Single diode packages: SOD323, SCD80 SCD80 Diode arrays in SOT363, SOT23, SOT143, SOT343, SOT323 BAS 140W  Silicon AF Schottky diode for high-speed BAS 170W  Silicon AF Schottky diode for high-speed
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~1896.htm
Infineon 26/10/2000 61.6 Kb HTM pro~1896.htm
BAS 40-07  Silicon AF Schottky diode for high-speed Features: Single, double, triple and quadruple diode configurations Single diode packages: SOD323, SCD80 SCD80 Diode arrays in SOT363, SOT23, SOT143, SOT343, SOT323 BAS 140W  Silicon AF Schottky diode for high-speed BAS 170W  Silicon AF Schottky diode for high-speed
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~1465.htm
Infineon 26/10/2000 61.6 Kb HTM pro~1465.htm
BAS 40-07  Silicon AF Schottky diode for high-speed Features: Single, double, triple and quadruple diode configurations Single diode packages: SOD323, SCD80 SCD80 Diode arrays in SOT363, SOT23, SOT143, SOT343, SOT323 BAS 140W  Silicon AF Schottky diode for high-speed BAS 170W  Silicon AF Schottky diode for high-speed
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~1839.htm
Infineon 26/10/2000 62.13 Kb HTM pro~1839.htm
mixing. 144 K 05.95 BAS 40 BAS 40-04 (Dual) BAS 40-05 (Dual) BAS 40-06 (Dual) BAS 40-07 (Dual mixing 144 K 02.96 BAS 40-07W General-purpose diode for high-speed switching. Circuit 04.98 BAS 70-04S 70-04S General-purpose diode for high-speed switching. Circuit protection. Voltage clamping. High-level detecting and mixing. 47 K 11.98 BAS 70-06S 70-06S General-purpose diode for CECC quality assessment. 48 K 11.98 BAS 70-07W General-purpose diode for high-speed
/datasheets/files/infineon/products/35/35211.htm
Infineon 26/11/1998 8.87 Kb HTM 35211.htm
BAS 40-07 (Dual) General-purpose diodes for high-speed switching. Circuit protection. Voltage 07.94 BAT 60A Rectifier Schottky diode with extreme low V F drop for mobile communication. step-up-conversion. 30 K 06.97 BAT 60B Rectifier Schottky diode for mobile communication. Low voltage Schottky rectifier diode. For low-loss, fast-recovery rectification, meter protection, bias isolation and (Dual) Low-power Schottky rectifier diode. For low-loss, fast-recovery rectification, meter
/datasheets/files/siemens/products/35/35211.htm
Siemens 26/02/1998 10.66 Kb HTM 35211.htm
  1N5929D 1N5929D   PartID: 4007 |  Rev: 1/4/99   Datasheet  |   Scottsdale     Part Type: Zener Voltage Regulator Diode Package: DO-41 DO-41 (STD-Thru Hole)       1.5 Watts 15 Volts
/datasheets/files/microsemi/products/4007.htm
Microsemi 04/01/1999 6.17 Kb HTM 4007.htm
1N5929D 1N5929D   (#4007)   Zener Voltage Regulator Diode Division Scottsdale Datasheet SA5-57 SA5-57.PDF Mil-Spec (none) Prod-Class (none) Shipping TR12\4000cnt Qual Data (none) Absolute Maximum Ratings  Symbol  Max  Unit Power Dissipation   Power  1.5  W
/datasheets/files/microsemi/products/4007-v1.htm
Microsemi 08/12/1999 9.25 Kb HTM 4007-v1.htm
primary winding. An ultrafast high voltage diode is requested too. The second method is a dissipative of Vdss at which Q1 turns-on, but also by the conduction start time of the forward secondary diode the polar - ity, directly biasing the secondary diode D3. The current flowing into the primary winding secondary. Fig 4 shows the current in the forward diode and Q1 gate voltage; it is also possible to see that forward diode current (400mA/div) Time: 100ns/div APPLICATION NOTE 4/10 Fig 7 shows the schematic diagram
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4744.htm
STMicroelectronics 20/10/2000 18.51 Kb HTM 4744.htm
very well coupled to the primary winding. An ultrafast high voltage diode is requested too. The conduction start time of the forward secondary diode that anticipate the Q1 turn-on time. In fact, when the diode D3. The current flowing into the primary winding starts to discharge the Q1 Coss reducing its forward diode and Q1 gate voltage; it is also possible to see that the current increase before Q1 turn efficiency goes up. Figure 4: CH1: Main Mos gate signal (5V/div) CH2: Secondary forward diode
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4744-v3.htm
STMicroelectronics 25/05/2000 17.58 Kb HTM 4744-v3.htm
coupled to the primary winding. An ultrafast high voltage diode is requested too. The second method is a of Vdss at which Q1 turns-on, but also by the conduction start time of the forward secondary diode the polar - ity, directly biasing the secondary diode D3. The current flowing into the primary winding secondary. Fig 4 shows the current in the forward diode and Q1 gate voltage; it is also possible to see that forward diode current (400mA/div) Time: 100ns/div APPLICATION NOTE 4/10 Fig 7 shows the schematic diagram
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/4744-v2.htm
STMicroelectronics 14/06/1999 15.71 Kb HTM 4744-v2.htm