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Part Manufacturer Description Datasheet BUY
UC1612J Texas Instruments SILICON, RECTIFIER DIODE, CERDIP-8 visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70° visit Intersil
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments

diode 3L

Catalog Datasheet MFG & Type PDF Document Tags

HSMS High frequency detector diode

Abstract: hsch 3486 zero bias schottky diode low loss impedance matching network at the input to the diode(3l However, this is unfortunately not , m HEWLETT® PACKARD The Zero Bias Schottky Detector Diode Application Note 969 Introduction A conventional Schottky diode detector such as the Hewlett-Packard HSMS-8101 requires no bias for high level , often difficult to supply. A Schottky diode has been developed to eliminate this need for dc bias , current characteristics of the HSMS-8101 Schottky diode and two versions of zero bias diodes, HSMS
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HSMS-2850 HSCH-3486 HSMS High frequency detector diode hsch 3486 zero bias schottky diode Microwave detector diodes diode 3L McGraw-Hill HP87S3C HP8753C
Abstract: Module .E'( @: D VOO @W @7A X NH @W @:AK Y NGOO @ Inverse Diode 6= 3L D NPH I: 6=RS SK25GB12T4 6=RSD Q T 6=%,+ 6=KS .E D NO +'W 4C2J '/%& *CF& 3L D NHO I: Module 6 , Characteristics Symbol Conditions Inverse Diode )= ® Units 3L D GH I:(4/E2&F_ GB5 GB[G @ , IGBT @:AK 3L D GH I: 6: 3L D NPH I: Values Units @ QP ; 3' D PO I: QO ; PH ; U GO @ 3L D NHO I: NO Z' 3' D GH I: QO ; 3' D PO I: 6:RS SEMIKRON
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Abstract: (TO3P-3L, TO247) 0.2 °C/W Per diode Total Rth(j-c) 2.2 Junction to case (TO-3PF) Rth , DC Description A2 A1 K TO3P-3L STTH60AC06CP A2 A1 K TO-3PF STTH60AC06CPF K The STTH60AC06C, which uses ST Turbo 2 600 V technology, is suited as boost diode especially to use , intended for use as a free wheeling diode in power supplies and other power switching applications. A2 , 1 STTH60AC06C Characteristics Table 2. Absolute ratings (limiting values per diode at 25 °C STMicroelectronics
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STTH60AC06CW ID024886

2n7000

Abstract: 2N7000 MOSFET 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET TYPE VDSS , TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION This MOSFET is , -92 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH SWITCHING APPLICATIONS SOT23-3L TO-92 ORDER CODE , SOT23-3L TAPE & REEL April 2004 1/10 2N7000 - 2N7002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-92 VDS VDGR VGS ID Unit STO23-3L Drain-source Voltage (VGS = 0) 60
STMicroelectronics
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2N7000G 2N7000 MOSFET 2N7002 MARKING STO-23 2N7002 st ST2N transistor STMicroelectronics SOT23 Marking CODE STO23-3L
Abstract: 2N7000 2N7002 N-CHANNEL 60V - 1.8â"¦ - 0.35A SOT23-3L - TO-92 STripFETâ"¢II MOSFET TYPE VDSS , 2 TYPICAL RDS(on) = 1.8â"¦ @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L DESCRIPTION , reproducibility. TO-92 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH SWITCHING APPLICATIONS SOT23-3L , -92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL April 2004 1/10 2N7000 - 2N7002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-92 VDS VDGR VGS ID Unit STO23-3L STMicroelectronics
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Abstract: (TO3P-3L, TO247 LL) 0.2 °C/W Per diode Total Rth(j-c) 2.7 Junction to case (TO , A1 The STTH30AC06C uses ST Turbo 2 600 V technology It is suited as boost diode specially for , Table 1. Device summary Symbol IF(AV) A1 K A2 TO3P-3L STTH30AC06CP TO-247 LL , STTH30AC06C Characteristics Table 2. Absolute ratings (limiting values per diode at 25 °C, unless , 600 V IF(RMS) Forward rms current 30 A Per diode Surge non repetitive forward STMicroelectronics
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STTH30AC06CWL STTH30AC06CPF ID025011

transistor 2SB618

Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , 120 TO-92 TOP-3A 80 6 120 8 140 10 MT200 230 17 12 TOP-3L , 120 8 2SB883 TOP-3L 180 15 12 60 3 2SB885 80 4 160 1.5 250 , 180 NPN 2SB880 150 TO-126 PNP 2SD970 100 TOP-3L PNP NPN 2SD1190 60 TOP-3L PNP NPN 2SD845 100 TOP-3A NPN 2SD768 200 150 PNP 2SD1031 130
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transistor 2SB618 2SA733 2SC1815 2SA970 2SC2240 2SA988 2SC1841
Abstract: ds313.fm Page 1 Thursday, September 15, 2005 11:39 AM 0 Spartan-3L Low Power FPGA Family , Spartanâ"¢-3L Field-Programmable Gate Arrays (FPGAs) consume less static current than corresponding members of the standard Spartan-3 family. Spartan-3L devices provide the identical function, features , feature set taken together with low selling prices and reduced quiescent current levels make the Spartan-3L , benefit of the Spartan-3L family beyond static current reduction is the Hibernate mode, which lowers Xilinx
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DS313 DS099 DS099-4 DS099-1 DS099-2 DS099-3

SPARTAN-3

Abstract: DS099 ds313.fm Page 1 Thursday, September 15, 2005 11:39 AM 0 Spartan-3L Low Power FPGA Family , SpartanTM-3L Field-Programmable Gate Arrays (FPGAs) consume less static current than corresponding members of the standard Spartan-3 family. Spartan-3L devices provide the identical function, features, timing , taken together with low selling prices and reduced quiescent current levels make the Spartan-3L family , of the Spartan-3L family beyond static current reduction is the Hibernate mode, which lowers device
Xilinx
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SPARTAN-3 XCF00S FGG900 SSTL18

DS099-2

Abstract: DS099 ds313.fm Page 1 Wednesday, November 3, 2004 5:48 PM 0 Spartan-3L Low Power FPGA Family R DS313 (v1.0) November 3, 2004 0 0 Introduction · SpartanTM-3L Field-Programmable Gate , . Spartan-3L devices provide the identical function, features, timing, and pinout of the original Spartan , reduced quiescent current levels make the Spartan-3L family the first choice for power-sensitive consumer electronic applications. Another power-saving benefit of the Spartan-3L family beyond static current
Xilinx
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FGG320

ST2N

Abstract: 2N7002 2N7000 2N7002 N-channel 60 V, 1.8 , 0.35 A, SOT23-3L, TO-92 STripFETTM Power MOSFET Features , ) 0.20 A 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Application , therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram SOT23-3L , 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November 2008 Rev 9 1/14 , SOT23-3L Drain-source voltage (VGS = 0) 60 V Drain-gate voltage (RGS = 20 k) 60 V ±
STMicroelectronics
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ST2N 2n7000 equivalents 2n7000 equivalent DSS SOT23 23 sot23 JESD97

DMG1012

Abstract: ZVN4206GV packages such as TO252-3L. The breadth of the Diodes Incorporated MOSFET portfolio, now incorporating , N-channel Part Number Configuration ESD Diode (Y/N) VDS (V) VGS (±V) IDS (A) PD (W , 17 8.9 27 40 - 857 9.1 TO252-3L DMN2075U Single N 20 ±8 4.2 , /10 11:52 Page 5 20V P-channel Part Number ESD Configuration Diode (Y/N) VDS (V , Configuration Type Diode (Y/N) N Y a DMG1016UDW a Complementary VDS (V) ±6 a a Y
Diodes
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DMG1012 ZVN4206GV DMP2066 zxmhc3f381n8 ZXMS6004FFTA DMN2075 D-81541 A1103-04

XCF00S

Abstract: spartan 3a ds313.fm Page 1 Friday, April 18, 2008 10:26 AM 0 Spartan-3L Low Power FPGA Family R , purchases and replacement products. Introduction Spartan®-3L Field-Programmable Gate Arrays (FPGAs) consume less static current than corresponding members of the standard Spartan-3 family. Spartan-3L , (DCMs), and Multiplier blocks. Another power-saving benefit of the Spartan-3L family beyond static , power-saving modes. The three-member Spartan-3L family ranges in density from one to four million system
Xilinx
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XCN07010 spartan 3a

marking BS SOT23

Abstract: 2N7000 circuits 2N7000 2N7002 N-channel 60 V, 1.8 â"¦, 0.35 A, SOT23-3L, TO-92 STripFETâ"¢ Power MOSFET , < 5 â"¦(@10V) 0.20 A 3 (s) ct 2 1 â  Low Qg â  Low threshold drive SOT23-3L , SOT23-3L bs O Table 1. TO-92 Device summary Order codes Marking Package Packaging 2N7000 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape and reel November , W ro P Value Unit TO-92 SOT23-3L 125 357.1 (1) °C/W Operating junction
STMicroelectronics
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marking BS SOT23 2N7000 circuits

2N7000 MOSFET

Abstract: 2n7000 equivalents 2N7000 2N7002 N-channel 60V - 1.8 - 0.35A - SOT23-3L / TO-92 STripFETTM Power MOSFET General , ) 0.20 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Description This MOSFET , reproducibility. Internal schematic diagram Applications Switching application SOT23-3L TO , 2N7002 STN2 SOT23-3L Tape & reel June 2006 Rev 7 1/14 www.st.com 14 Contents , maximum ratings Symbol Parameter Value TO-92 VDS VDGR VGS ID Unit SOT23-3L
STMicroelectronics
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2N7002 MARKING

Abstract: 2N7002 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General , reproducibility. APPLICATIONS s HIGH SWITCHING APPLICATIONS SOT23-3L TO-92 Figure 2: Internal Schematic Diagram SOT23-3L TO-92 Table 2: Order Codes SALES TYPE 2N7000 2N7002 MARKING 2N7000G ST2N PACKAGE TO-92 SOT23-3L PACKAGING BULK TAPE & REEL Rev. 2 April 2005 1/11 2N7000 - 2N7002 Table 3 , (pulsed) Total Dissipation at TC = 25°C 0.35 1.4 1 60 60 ± 18 0.20 1 0.35 Value SOT23-3L V V V A A W Unit
STMicroelectronics
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codes marking st2n 2N7002 di 7110469/A

ST2N

Abstract: 2n7000 equivalents 2N7000 2N7002 N-channel 60V - 1.8 - 0.35A - SOT23-3L / TO-92 STripFETTM Power MOSFET Features , ) 0.20 3 2 1 Low Qg Low threshold drive SOT23-3L TO-92 Application , therefore a remarkable manufacturing reproducibility. Figure 1. Internal schematic diagram SOT23-3L , 2N7000G TO-92 Bulk 2N7002 ST2N SOT23-3L Tape & reel September 2007 Rev 8 1/14 , SOT23-3L Drain-source voltage (VGS = 0) 60 V Drain-gate voltage (RGS = 20 k) 60 V ±
STMicroelectronics
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Abstract: 2N7000 2N7002 N-CHANNEL 60V - 1.8â"¦ - 0.35A SOT23-3L - TO-92 STripFETâ"¢II POWER MOSFET , SOT23-3L DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique , HIGH SWITCHING APPLICATIONS SOT23-3L TO-92 ORDERING INFORMATION SALES TYPE MARKING PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL , -92 VDS VDGR VGS ID Unit STO23-3L Drain-source Voltage (VGS = 0) 60 V Drain-gate STMicroelectronics
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ST2N

Abstract: STO-23 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII POWER MOSFET , 2N7000 2N7002 2 TYPICAL RDS(on) = 1.8 @10V LOW Qg LOW THRESHOLD DRIVE 3 1 SOT23-3L , reproducibility. TO-92 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH SWITCHING APPLICATIONS SOT23-3L , -92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL February 2004 1/7 2N7000 - 2N7002 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value TO-92 VDS VDGR VGS ID Unit STO23-3L
STMicroelectronics
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transistor 2n7002 2N7002 SOT23 2n7000+complement

2N7002

Abstract: 2N7002 MARKING 2N7000 2N7002 N-CHANNEL 60V - 1.8 - 0.35A SOT23-3L - TO-92 STripFETTMII MOSFET Table 1: General , reproducibility. APPLICATIONS HIGH SWITCHING APPLICATIONS 3 2 1 SOT23-3L TO-92 Figure 2: Internal Schematic Diagram SOT23-3L TO-92 Table 2: Order Codes SALES TYPE MARKING PACKAGE PACKAGING 2N7000 2N7000G TO-92 BULK 2N7002 ST2N SOT23-3L TAPE & REEL Rev. 3 , TO-92 VDS VDGR VGS ID IDM ( ) PTOT Unit SOT23-3L Drain-source Voltage (VGS = 0
STMicroelectronics
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transistor ST2N
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