NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Samples | Ordering |
| PZU5.1BL,315 | NXP Semiconductors | Single Zener diodes; Package: SOD882 (SOD2); Container: Tape reel smd | 
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| PZU9.1BL,315 | NXP Semiconductors | Single Zener diodes; Package: SOD882 (SOD2); Container: Tape reel smd |
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| PZU11BL,315 | NXP Semiconductors | Single Zener diodes; Package: SOD882 (SOD2); Container: Tape reel smd |
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| PESD3V3X1BL,315 | NXP Semiconductors | Ultra low capacitance bidirectional ESD protection diode, SOD882 (SOD2), Tape reel SMD |
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| PESD5V0V1BL,315 | NXP Semiconductors | Very low capacitance bidirectional ESD protection diodes, SOD882 (SOD2), Tape reel smd |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: MBRS130LT3 MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited , reel Cathode Polarity Band Marking: 1BL3 MARKING DIAGRAM 1BL3 MAXIMUM RATINGS Rating , ) IFSM 40 A TJ 65 to +125 °C 1BL3 = Device Code Unit Operating Junction ... | Original |
4 pages, |
MBRS130LT3 marking CASE 403A 150 1BL3 MBRS130LT3 1BL3 marking code on 1bl3 marking code 1BL3 1bl3 diode 1bl3 MBRS130LT3 abstract |
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| Abstract: MBRS130LT3 MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in , Cathode Polarity Band AYWW 1BL3G G 1BL3 = Specific Device Code A = Assembly Location Y = Year ... | Original |
3 pages, |
on 1bl3 MBRS130LT3G 1bl3 schottky diode SMB marking code 120 MBRS130LT3 AS 031 diode 1bl3 MBRS130LT3 abstract |
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| Abstract: MOTOROLA Order this document by MBRS130LT3/D MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Schottky Power Rectifier MBRS130LT3 MBRS130LT3 Surface Mount Power Package . . . Employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency , Seconds · Shipped in 12 mm Tape and Reel, 2500 units per reel · Cathode Polarity Band · Marking: 1BL3 ... | Original |
4 pages, |
MBRS130LT3 403A-03 1bl3 motorola MBRS130LT3 marking 1BL3 diode 1bl3 MBRS130LT3/D MBRS130LT3/D abstract |
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| Abstract: MOTOROLA Order this document by MBRS130LT3/D MBRS130LT3/D SEMICONDUCTOR TECHNICAL DATA Designer's TM Data Sheet MBRS130LT3 MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package Motorola Preferred Device . . . Employs the Schottky Barrier principle in a large area metaltosilicon power diode. Stateoftheart geometry features epitaxial construction with oxide passivation and metal , : Notch in Plastic Body Indicates Cathode Lead · Marking: 1BL3 CASE 403A03 MAXIMUM RATINGS Rating ... | Original |
4 pages, |
schottky power rectifier MOTOROLA on 1bl3 MBRS130LT3 marking MBRS130LT3 1bl3 MBRS130LT3/D MBRS130LT3/D abstract |
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| Abstract: MBRS130LT3 MBRS130LT3 Preferred Device Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in , Purposes: · 260°C Max. for 10 Seconds Cathode Polarity Band AYWW 1BL3G G 1BL3 = Specific ... | Original |
6 pages, |
MBRS130LT3G MBRS130LT3 on 1bl3 diode 1bl3 1bl3 MBRS130LT3 abstract |
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| Abstract: MBRS130LT3 MBRS130LT3 Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount , Cathode Polarity Band AYWW 1BL3G G 1BL3 = Specific Device Code A = Assembly Location Y = Year ... | Original |
6 pages, |
MBRS130LT3G ON SEMICONDUCTOR MBRS130LT3G MBRS130LT3 1BL3 marking code 1bl3 on 1bl3 diode 1bl3 MBRS130LT3 abstract |
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| Abstract: MBRS130LT3G MBRS130LT3G, SBRS8130LT3G SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in , Purposes: Cathode Polarity Band 1BL3 A Y WW G = Specific Device Code = Assembly Location = Year = ... | Original |
5 pages, |
SBRS8130LT3G 1BL3 marking code MBRS130LT3G MBRS130LT3G abstract |
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| Abstract: b2045 u810 motorola u860 b2545 transistor manual U1615 u1640 U1620 aka USD1120 u1560 b2045 aka SWITCHMODE Power Rectifier OR'ing Function Diode . . . . . . . . . . 125 25 Amp, 35 Volt SWITCHMODE Power ... | Original |
578 pages, |
u1520 diode U3J PK MUR 460 U820 diode fast recovery diode ses5001 u860 diode u1560 DIODE U840 diode motorola motorola u860 diode DIODE u1560 DL151/D DL151/D abstract |
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