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diode+104

Catalog Datasheet MFG & Type PDF Document Tags

diode 104

Abstract: b6 diode Chopper-IGBT DD B6U 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties , with Chopper-IGBT DD B6U 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties , 104 N 16 RR N B6 Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage , Diode Module with Chopper-IGBT BIP AM; R. Jörke DD B6U 104 N 16 RR 14. Dez 00 N Seite , Diode Module with Chopper-IGBT DD B6U 104 N 16 RR N Analytische Elemente des transienten
Eupec
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B6U 104

Abstract: ic vrm Chopper-IGBT DD B6U 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties , with Chopper-IGBT DD B6U 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties , 104 N 16 RR N B6 Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage , Diode Module with Chopper-IGBT BIP AM; R. Jörke DD B6U 104 N 16 RR 14. Dez 00 N Seite , Diode Module with Chopper-IGBT DD B6U 104 N 16 RR N Analytische Elemente des transienten
Eupec
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varactor diode for Colpitts oscillator

Abstract: varactor diode pcb design Application Note AN-104 Determining the tuning range for TLSI's high frequency VCXOs ­ T231 , Ctuning (External Varactor) Figure 1. Typical crystal/VCXO connection AN-104 Page 1 Revision , 631-755-7626 · www.tlsi.com AN-104 Adjusting VCXO tuning range The crystal may be modeled with the , , Ctuning_max. AN-104 Page 2 Revision 1.1, April 22, 2004 TLSI Incorporated, 770 Park Avenue, Huntington NY 11743 · (631) 755-7005 · Fax 631-755-7626 · www.tlsi.com AN-104 Adjusting VCXO tuning
TLSI
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7N65G

Abstract: 7N65L Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-104.I 7N65  Power MOSFET MARKING , CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW-R502-104.I 7N65  Power MOSFET , 62.5 0.88 UNIT °C/W θJC 2.6 °C/W 2.5 3 of 9 QW-R502-104.I 7N65  Power , μC 4 of 9 QW-R502-104.I 7N65  Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T , TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 9 QW-R502-104.I 7N65 Power MOSFET TEST CIRCUITS
Unisonic Technologies
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IN4001

Abstract: IN4001 NPN CAP150 CAP100 CAP100 Comment Battery Battery Battery Battery 103 47p 104 104 104 104 , IN4001 LED LED 7805 NPN NPN 100K 10K 75K 10 10 33 33 100K 100K Rt Rt 30K 30K 104 104 104 -
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HT48R062 IN4001 NPN VR1 7805 7805 diode capacitor pol 7805 VR IN-4001 HA0144T CAPNP120 F/25V F/16V HT48R062/18DIP

BAQ806

Abstract: diode 1407 Semiconductors Product specification AM PIN diode BAQ806 GRAPHICAL DATA MGG500 104 handbook, halfpage MGG501 104 handbook, halfpage IF (mA) 103 IF (mA) 103 102 102 10 10 , 2V 4 4 2 0 10 0 2 0 4 6 8 VR (V) 10 102 103 f (kHz) 104 , 25 °C 10 3 -40 °C 0 10 102 103 f (kHz) 2 10 104 VR = 0 V. Fig , . 1998 Aug 03 Fig.8 5 Diode capacitance as a function of frequency; typical values. 104
Philips Semiconductors
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diode 1407 diode 104 M3D168 DO-214AC MSA474 SCA60

B6U 160

Abstract: 4063 transistor Chopper-IGBT DD B6U 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties , with Chopper-IGBT DD B6U 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical properties , 104 N 16 RR N B6 Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage , Diode Module with Chopper-IGBT BIP AM; R. Jörke DD B6U 104 N 16 RR 14. Dez 00 N Seite , Diode Module with Chopper-IGBT DD B6U 104 N 16 RR N Analytische Elemente des transienten
Eupec
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B6U 160 4063 transistor

diode 104

Abstract: S G D S Packing Tube Tube Tube Tube Tube Tape Reel Tube 1 of 8 QW-R502-104 , SYMBOL θJA θJC RATINGS 62.5 0.88 2.6 2.5 UNIT °C/W °C/W 2 of 8 QW-R502-104 , A 320 2.4 ns μC 3 of 8 QW-R502-104.H 7N65  Power MOSFET TEST CIRCUITS AND , TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-104.H 7N65 Power MOSFET TEST CIRCUITS , ., LTD www.unisonic.com.tw 5 of 8 QW-R502-104.H 7N65 TYPICAL CHARACTERISTICS On-Resistance
Unisonic Technologies
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7N65L-TA3-T 7N65G-TA3-T 7N65L-TF1-T 7N65G-TF1-T 7N65L-TF2-T 7N65G-TF2-T

CQY78

Abstract: cqy77 approximately 2 x 104 V/cm. Accordingly, a carrier requires approximately 50 ps to completely drift through a , Definition life = power drop to 50% 2 10-4 100 50 2 4 6 101 2 4 6 102 mA 101 I 102 103 104 105 h Time Figure 2.5 Light Current - diode Current Characteristic Figure 2.7 Radiated Power versus Operating Life uW 104 3. Measuring Technique e Detectors , ) ph fc 1 10-3 104 10.76 = = = = mlx 10-3 1 107 10760 10-4 10-7 1 1.076 x
Siemens
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CQY78 cqy77 SF-104 equivalent transistor phototransistor application lux meter solar cell transistor infrared BPW33

7n65f

Abstract: UTC7N65 8 QW-R502-104.G 7N65 ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified , QW-R502-104.G 7N65 ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) SYMBOL BVDSS , 1.2 R 1.2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 8 QW-R502-104.G 7N65 , ., LTD www.unisonic.com.tw 4 of 8 QW-R502-104.G 7N65 TEST CIRCUITS AND WAVEFORMS (Cont.) RL , QW-R502-104.G 7N65 TYPICAL CHARACTERISTICS Power MOSFET On-Resistance Variation vs. Drain
Unisonic Technologies
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7n65f UTC7N65 7n65 TO-220F2 7N65L-TF3-T 7N65G-TF3-T 7N65L-T2Q-T 7N65G-T2Q-T 7N65L-TQ2-R 7N65G-TQ2-R
Abstract: temperature. Fig.3 MGG500 104 handbook, halfpage Maximum permissible average forward current as a function of ambient temperature. MGG501 104 handbook, halfpage IF (mA) 103 IF (mA , ) 20 103 f (kHz) 104 Tj = 25 °C. (1) VR = 0. (2) VR = 2 V. f = 1 MHz; Tj = 25 °C. , Product specification AM PIN diode BAQ800 MGG504 104 handbook, halfpage MGG505 105 handbook, halfpage rD () rs (k) 103 104 102 103 10 102 1 10 102 103 Philips Semiconductors
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M3D119 MAM123 IEC134 SCA55

CM1000E3U-34NF

Abstract: ) Gate-Emitter Voltage (C-E SHORT) Collector Current DC (TC = 104°C)*6 Peak Collector Current (Pulse)*2 Emitter , ) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25 , CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, trr, (ns) 104 104 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 1000A VCC = 800V VCC = , RG = 0.47 Tj = 125°C Inductive Load 103 COLLECTOR CURRENT, IC, (AMPERES) 104 102 102 103
Powerex
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CM1000E3U-34NF

KA2418B

Abstract: KB2418B 18K 6V 104 < KB2418B APPLICATION CIRCUIT > TIP Ring L1 4.2mH L2 4.2mH 0.95uF/ R1 250V 4K7 0.47uF/ 250V R2 10K 4 1 Lamp 3 C3 104 2 Vcc R6 10K KA2418B 7 C4 104 2 8 R4 100 C5 224 R56 3K3 T1 32 1300:32 4 R3 36K TONE RINGER , SW4~SW7 Activation voltage Vcc (DC) OFF SW3-104 SW5 - Increase Vcc - Check out the oscillation starting voltage Activation voltage range Vcc (DC) ON SW3-104 SW5 - Increase
Samsung Electronics
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SW3-104

transistor buz 104

Abstract: Low on-resistance · 175°C operating temperature · also in TO-220 SMD available k BUZ 104 Type BUZ 104 Vbs 50V b 17.5 A ^bS(on) 0.1 Û Package TO-220 AB Ordering Code C67078-S1353-A2 , Values typ. max. BUZ 104 Unit V pA nA ma nA n Semiconductor Group 745 07.96 , 104 Values typ. max. Unit £hs 4 Qss 350 C0ss 140 Crss 60 tj(on) 90 210 470 7.5 S pF , =/Si 6 i f l d t = 100 A/ps W sd Ism BUZ 104 Values typ. max. Unit A 17.5 70 V 1.15 1.8 ns
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OCR Scan
transistor buz 104
Abstract: (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 104 103 6 IC = 400A IC = 1000A 2 4 8 12 16 Tj = 25°C Tj = 125°C 102 0.5 1.0 20 1.5 2.0 2.5 3.0 3.5 104 tf , COLLECTOR CURRENT, IC, (AMPERES) 104 REVERSE RECOVERY TIME, trr, (ns) td(off) td(on) 102 Cres 100 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 104 103 Coes EMITTER-COLLECTOR , CHARGE, VGE 104 103 100 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 102 104 20 Powerex
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INFINEON TVS diode process

Abstract: ESD TVS ESD TVS Diodes Agilent ADS Design Kit Manual Revision: 1.0.4 - October 7, 2011 RF a n d P r o , Rev. 1.0.4 - October 7, 2011 ESD TVS Diodes Agilent ADS Design Kit Manual 1 Introduction , Bi-directional Low Capacitance TVS Diode Infineon Technologies AG Page 4 of 8 Rev. 1.0.4 - October 7 , Figure 3: Unzip design kit. Infineon Technologies AG Page 5 of 8 Rev. 1.0.4 - October 7, 2011 , Rev. 1.0.4 - October 7, 2011 ESD TVS Diodes Agilent ADS Design Kit Manual Figure 6: Placement
Infineon Technologies
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INFINEON TVS diode process ESD TVS ESD5V3L1B-02LS advanced design system agilent ads TSSLP21
Abstract: Forward Current IFSM 2000 Amperes I2t 1.66 x 104 A2s VISO 2500 Volts (1 , 1.0 2.0 3.0 102 101 4.0 REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 104 REVERSE RECOVERY TIME, trr (ns) REVERSE RECOVERY CURRENT, Irr (AMPERES) 104 101 103 102 , VRM = 600V IF = 400A Tj = 25°C Inductive Load Irr trr 101 102 103 104 103 102 , CHARGE, di/dt, (A/μs) 104 100 101 102 103 FORWARD CURRENT, IF, (AMPERES) TRANSIENT Powerex
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RM400DY-24S

GE thyristor

Abstract: thyristor 800A with Chopper-IGBT TD B6HK 104 N 16 RR N B6 Elektrische Eigenschaften / Electrical , 1600 V 60 A Ausgangsstrom output current TC = 85°C Id 104 A , Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 104 N 16 RR N B6 , Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 104 N 16 RR N B6 , Thyristor Module with Chopper-IGBT BIP AM; R. Jörke TD B6HK 104 N 16 RR 19. Dez 00 N Seite
Eupec
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GE thyristor thyristor 800A thyristor rectifier 600v 100a 600V 100 A THYRISTOR B6HK thyristor 25A
Abstract: Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current DC (TC = 104°C)*2 Peak Collector , CHARACTERISTICS (TYPICAL) 104 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 103 Tj = 25°C Tj = 125°C VGE = 0V Cies SWITCHING TIME, (ns) 104 102 103 td(off) td(on) tf , COLLECTOR CURRENT, IC, (AMPERES) 104 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER , , (AMPERES) GATE CHARGE, VGE 104 REVERSE RECOVERY TIME, trr, (ns) 104 104 20 GATE-EMITTER Powerex
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CM1000DUC-34NF CM1000DUC-24NF
Abstract: °C Start, VRM = 0V) I2t Current Square Time for Fusing 1.66 x 104 A2s (t w = 8.3ms, Tj = , RECOVERY CHARACTERISTICS (TYPICAL) 103 104 REVERSE RECOVERY TIME, trr (ns) REVERSE RECOVERY CURRENT, Irr (AMPERES) 104 101 103 102 REVERSE RECOVERY CURRENT, Irr (AMPERES) 103 103 , Load Irr trr 101 102 103 104 103 102 VRM = 600V IF = 400A Tj = 125°C Inductive , 10-1 100 10-2 103 RATE OF CURRENT CHARGE, di/dt, (A/μs) 104 10-3 100 101 102 Powerex
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