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TLC320AD75CDL Texas Instruments 20-Bit Stereo Audio Codec, 104 dB SNR 56-SSOP 0 to 70 visit Texas Instruments
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diode 104

Catalog Datasheet MFG & Type PDF Document Tags

5V unipolar STEPPER MOTOR

Abstract: ic 7805 100uF/35V ecap 10uF mini ecap 100uF/63V ecap 1N4148 diode 104 mono Pins 4013 IC 4030 IC 4N25 IC
Quasar
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5V unipolar STEPPER MOTOR ic 7805 stepper motor using irfz44 7805 IC 6 pin unipolar stepper motor motor driver IRFZ44 BC547B IRFZ44 MTP2955

diode 104

Abstract: mv104 MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MV104/D S ilic o n Tuning Diode , application requiring back-to-back diode configurations for minimum signal distortion and detuning. · · · · , CAPACITANCE DIODE CASE 29-04, STYLE 15 TO-92 (TO-226AA) MAXIMUM RATINGS (EACH DIODE) Rating Reverse , /°C °C °C Pd Tj Tstg ELECTRICAL CHARACTERISTICS (T/v = 25°C unless otherwise noted) (EACH DIODE , Vdc) TA = 60°C Diode Capacitance Temperature Coefficient ( V r = 4.0 Vdc, f = 1.0 MHz) Cf, Diode
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diode 104 mv104 MV-104 CI 2904 TO226AA MV104 C3/C30

diode 104

Abstract: click 0819 Diode) 26 ISM Pulsed Source Current1 (Body Diode) 104 VSD Diode Forward Voltage2 , Drain Current 26 A IDM Pulsed Drain Current 1 104 A VGS Gate ­ Source Voltage , °C 85 125 tf Fall Time 56 112 RG = 1.8W pF nC ns SOURCE ­ DRAIN DIODE , [Cont.] IDS = ID [Cont.] , t = 1 Sec. Max. Unit 360 W 360 W 104 A THERMAL
Semelab
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SML5023BN click 0819
Abstract: Time td(off) pF Fall Time ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN 26 Continuous Source Current (Body Diode) ISM VSD Pulsed Source Current 1 (Body Diode) 104 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont , = 25°C 300 Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 104 -55 , t1 t2 Duty Factor D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 Advanced Power Technology
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APT5020SVR

M1570

Abstract: m3058 M 10 â'"dlp/dt(A/ns) 102 Fig.7 Maximum trr at Tj = 25 °C; per diode. 104 Vr (ns) 103 r- 03-21 , alongside other components without the need for additional insulators. QUICK REFERENCE DATA Per diode , Absolute Maximum System (IEC134). Voltages (per diode) Repetitive peak reverse voltage VppM Non , . 50 100 150 200 max. 55 110 165 220 Currents (per diode) Average forward current; switching losses , junction to mounting base per diode From junction to mounting base total From mounting base to heatsink
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BYV54V M1570 m3058 M m3058 BYV54-100 M3033 DIODE B91 T-03-Z BYV54V- 7Z95878A

APT5020BVR

Abstract: SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN 26 Continuous Source Current (Body Diode) ISM VSD Pulsed Source Current 1 (Body Diode) 104 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = , Watts Linear Derating Factor 2.4 W/°C VGSM PD TJ,TSTG 104 -55 to 150 Operating , /t2 Peak TJ = PDM x ZJC + TC 0.001 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE
Advanced Power Technology
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APT5020BVR
Abstract: nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 's Continuous Source Current (Body Diode) 26 'sM Pulsed Source Current © (Body Diode) 104 Diode Forward V o lta g e © (VQS = 0V, lg = -lDfContl) 1.3 UNIT V SD , Pulsed Drain Current © 104 Gate-Source Voltage Continuous ± 30 Gate-Source Voltage , " < à > cr LU V SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE -
OCR Scan
Abstract: nC ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN 's Continuous Source Current (Body Diode) 26 'sM Pulsed Source Current © (Body Diode) 104 Diode Forward V o lta g e © (VQS = 0V, lg = -lDfContl) 1.3 UNIT V SD , Drain-Source Voltage Continuous Drain Current @ Tc = 25°C 26 Pulsed Drain Current © 104 , SD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE FIGURE -
OCR Scan
Abstract: Reverse Transfer Capacitance MIN RG = 1.8Q Fall Time ns SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol Characteristic / Test Conditions MIN Continuous Source Current (Body Diode) 26 'sM Pulsed Source Current © (Body Diode) 104 ^S D Diode Forward V oltage© (VGg = 0V, lg , Voltage Volts Continuous Drain Current @ Tc = 25°C 26 ' dm Pulsed Drain Current © 104 , '"â'™ d ^ ^D S S â'™ * = ^ ® eC â'˜ Inductive Current Clamped MIN 310 Watts 310 104 -
OCR Scan
APT4020SN

T03A

Abstract: BYV54-100 GOSSkGfl 7 â  T-oz.ai Fig.7 Maximum trr at Tj = 25 °C; per diode. 104 Vr (ns) 10: 102 10 10 -dlp , alongside other components without the need for additional insulators. QUICK REFERENCE DATA Per diode , Absolute Maximum System (IEC134) Voltages (per diode) Repetitive peak reverse voltage Non repetitive peak reverse voltage Currents (per diode) Average forward current; switching losses negligible up to 100 kHz , diode From junction to mounting base total From mounting base to heatsink with heatsink compound
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T03A M3029 TERMINAL M4 M3031 BYV5 M3Q34 S3T31

30d060

Abstract: 200v dc motor igbt IGBT 0.56 °C/W FWrt Diode 1.04 â I EH3ô7cÃS 0004553 555 â  This Material Copyrighted By , tr lc=30A 0.11 US Turn-off Time toFF VÅ"=+15V 0.30 tf Rg=8Ãà 0.35 Diode Forward
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30D-060 30d060 200v dc motor igbt igbt 30A V200V CIET 702708-D 0G04557

D74HC04C

Abstract: AVRL101A6R8GT AVR-M1608C120MT6AB 10­6 10­5 With Zener Diode 10­4 10­3 0 2 4 6 8 10 ESD voltage(kV) 12 , (1/10) (SMD) RoHS AVR AVR-M,AVRL Variable resistor 2 Zener diode - 2 Zener Diodes Current(A) 10­1 10­2 Zener diode /Vz:6.8V Positive direction 10­3 Chip varistor /V1mA:12V 10­4 A capacitance content 10­5 ­18 ­14 ­10 ­6 ­2 2 ­10­5 6 10 14 18 ­10­4 ­10­3 Negative direction ­10­2 ­10­1 Voltage(V) ESD
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D74HC04C AVRL101A3R3FT AVRL101A6R8GT smd diode 1410 AVRL101A1R1N AVR-M1005C6R8N AVRM1005C6R8N 2002/95/EC AVR-M1005/1608/2012 AVR-M14A2/0603/AVRL
Abstract: DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Symbol MIN 26 Continuous Source Current (Body Diode) IS ISM Pulsed Source Current 1 VSD Diode Forward Voltage 2 dv/ Peak Diode Recovery dt dv/ UNIT Amps (Body Diode) 104 (VGS = 0V, IS = - 26A , '¢ FAST RECOVERY BODY DIODE D G â'¢ Popular SOT-227 Package S MAXIMUM RATINGS Symbol VDSS , PD TJ,TSTG 104 -55 to 150 Operating and Storage Junction Temperature Range TL Lead Advanced Power Technology
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APT12040JVFR E145592

APT11044B2FLL

Abstract: APT11044JFLL Diode) ISM VSD dv/ Characteristic / Test Conditions UNIT Amps Pulsed Source Current 1 (Body Diode) 104 Diode Forward Voltage 2 (VGS = 0V, IS = -26A) 1.3 Volts 10 V/ns , Easier To Drive · Popular T-MAXTM or TO-264 Package · FAST RECOVERY BODY DIODE MAXIMUM RATINGS , Factor 5.56 W/°C PD TJ,TSTG 104 Operating and Storage Junction Temperature Range TL , Capacitance Qg MAX µJ 1812 VDD = 733V VGS = 15V ID = 22A, RG = 5 899 SOURCE-DRAIN DIODE
Advanced Power Technology
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APT11044B2FLL APT11044LFLL APT11044JFLL APT30DF120

D74HC04C

Abstract: AVRL101A1R1N Zener Diode 10­4 10­3 0 2 4 6 8 10 ESD voltage(kV) 12 14 CMOS: D74HC04C ESD , (1/10) SMD RoHS AVR AVR-MAVRL Variable resistor 2Zener diode - 2 Zener Diodes Current(A) 10­1 10­2 Zener diode /Vz:6.8V Positive direction 10­3 Chip varistor /V1mA:12V 10­4 A capacitance content 10­5 ­18 ­14 ­10 ­6 ­2 2 ­10­5 6 10 14 18 ­10­4 ­10­3 Negative direction ­10­2 ­10­1 Voltage(V) ESD, Surge
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AVR-M1608c390k AVRM1608C390K AVRL161A1R1N avrl101a3r3f AVRL161A6R8G AVRM0603C120M

APT12040JVR

Abstract: bd 426 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol IS Characteristic / Test Conditions MIN 26 Continuous Source Current (Body Diode) ISM VSD Pulsed Source Current 1 (Body Diode) 104 Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) 1.3 t rr Reverse Recovery Time (IS = , 5.6 W/°C VGSM PD TJ,TSTG 104 -55 to 150 Operating and Storage Junction Temperature , D = t1/t2 Peak TJ = PDM x ZJC + TC 0.001 0.0005 10-5 t1 10-4 10-3 10-2 10-1 1.0
Advanced Power Technology
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APT12040JVR bd 426

BD 143

Abstract: bd 426 Diode) ISM VSD Pulsed Source Current 1 (Body Diode) 104 Diode Forward Voltage 2 , 5.6 W/°C VGSM PD TJ,TSTG 104 -55 to 150 Operating and Storage Junction Temperature , Capacitance Qg MIN RG = 0.6W Fall Time nC ns SOURCE-DRAIN DIODE RATINGS AND , Peak TJ = PDM x ZJC + TC 0.001 0.0005 10-5 t1 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR , , SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE SOT-227 (ISOTOP
Advanced Power Technology
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BD 143 h 033

MC1696

Abstract: MC1600 , C, Cq are external components. Cn is a varactor diode. |â'"COMPARATOR- MC 1650 MC1651 Dual A/D , 11,14 - - 8 1,5 Tuning Ratio Test t TR - - - 3.1 4.5 - - - - 11,14 - - 8 1,5 â'¢Germanium diode 10.4 drop! forward biased from 11 to 14 (11 -H 14). CI = 0.01 j*F connected from pin 12 to Gnd. "Germanium diode (0.4 drop) forward biased from 14 to 11 (11 -14). C2 = 0.001 «F connected from pin 13 to
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MC1650 MC1600 MC1696 mc1658 MC1678 MC1668 motorola ceramic dual in-line case MC1658

PD-91840

Abstract: irl110 symbol showing the integral reverse p-n junction diode. T j = D / Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) © 104© A 416 1.3 126 V ns I [* "] Is m , Avalanche Rated 0.008Q lD = 104 A © Description Fifth Generation HEXFETsfrom International , eter lD @ Tc = 25°C lD @ T c = 100°C Id m Max. 104© 74© 416 2.4 167 1.1 ±16 340 62 17 5.0 -55 to , Gate-to-Source Voltage Single Pulse Avalanche Energy©© Avalanche Current© Repetitive Avalanche Energy© Peak Diode
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PD-91840 irl110 IRL1104S IRL1104L

D74HC04C

Abstract: AVRM1608C390K AVR-M1608C120MT6AB 10­6 10­5 With Zener Diode 10­4 10­3 0 2 4 6 8 10 ESD voltage(kV) 12 , Zener diode of two series connection. Therefore, do not have polarity. CURRENT vs. VOLTAGE CHARACTERISTICS EQUIVALENT CIRCUIT 2 Zener Diodes Current(A) 10­1 10­2 Zener diode /Vz:6.8V Positive direction 10­3 Chip varistor /V1mA:12V 10­4 A capacitance content 10­5 ­18 ­14 ­10 ­6 ­2 2 ­10­5 6 10 14 18 ­10­4 ­10­3 Negative direction ­10­2
TDK
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VARISTOR 6.2V Zener Diode zener diode chip 3R3F 1005 attenuator avr mp3 vs
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