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diode zener ZD 260

Catalog Datasheet MFG & Type PDF Document Tags

diode zener ZD 260

Abstract: SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE , KDZ5.1VV *KDZ2.7VV ZD DY *KDZ3.0VV ZE *KDZ3.3VV Type No. Marking - Y , Impedance Zz ( ) Zener Voltage Vz (V) TYPE No. Grade Reverse Current IR ( A) 3.89 4.00 4.17 , 1000 5 2.50 5 2.60 - 100 5 2.40 1.0 2.60 Y 120 5 2.28 0.5 , 2/4 KDZ2.0VV~36VV ELECTRICAL CHARACTERISTICS (Ta=25 ) Dynamic Impedance Zz ( ) Zener
KEC
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9vv marking

Abstract: DIODE MARKING 9Y ±6%. 2 KDZ2.0VV~36VV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 1 D C , .2VV *KDZ2.4VV *KDZ2.7VV *KDZ3.0VV *KDZ3.3VV *KDZ3.6VV *KDZ3.9VV Marking ZA ZB ZC ZD ZE ZF ZG ZH Y AY , CHARACTERISTICS (Ta=25) Zener Voltage Vz (V) TYPE No. Grade Min. KDZ2.0VV Y KDZ2.2VV Y KDZ2.4VV Y KDZ2.7VV Y KDZ3 , 2.65 2.80 2.90 3.20 5 120 5 1000 0.5 50 1.0 2.40 2.50 2.60 2.90 5 110 5 1000 0.5 120 1.0 2.16 2.28 2.38 2.60 5 100 5 1000 0.5 120 1.0 1.95 2.05 2.15 2.38 5 100 5 1000 0.5 120 1.0 1.85 Max. 2.15 5 100 5 1000
KEC
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diode zener ZD 260

Abstract: KDZ12VV SEMICONDUCTOR KDZ2.0VV~36VV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE , .1VV *KDZ2.7VV ZD DY *KDZ3.0VV ZE *KDZ3.3VV Type No. Y Marking - KDZ9.1VV ZS , Impedance Zz ( ) Zener Voltage Vz (V) TYPE No. Grade Reverse Current IR ( A) 3.89 4.00 4.17 , 1000 5 2.50 5 2.60 - 100 5 2.40 1.0 2.60 Y 120 5 2.28 0.5 , 2/4 KDZ2.0VV~36VV ELECTRICAL CHARACTERISTICS (Ta=25 ) Dynamic Impedance Zz ( ) Zener
KEC
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KDZ16VV

Abstract: diode zener ZD 260 ±6%. 2 KDZ2.0VV~36VV ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK 1 D C , .2VV *KDZ2.4VV *KDZ2.7VV *KDZ3.0VV *KDZ3.3VV *KDZ3.6VV *KDZ3.9VV Marking ZA ZB ZC ZD ZE ZF ZG ZH Y AY , CHARACTERISTICS (Ta=25) Zener Voltage Vz (V) TYPE No. Grade Min. KDZ2.0VV Y KDZ2.2VV Y KDZ2.4VV Y KDZ2.7VV Y KDZ3 , 2.65 2.80 2.90 3.20 5 120 5 1000 0.5 50 1.0 2.40 2.50 2.60 2.90 5 110 5 1000 0.5 120 1.0 2.16 2.28 2.38 2.60 5 100 5 1000 0.5 120 1.0 1.95 2.05 2.15 2.38 5 100 5 1000 0.5 120 1.0 1.85 Max. 2.15 5 100 5 1000
KEC
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MM13400004

Abstract: IM13400 ( Ultra-Fast recovery diode ) 11. ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to , ( Ultra-Fast recovery diode ) 15. Q1 : NPN transistor 2N3904 16. U1 : Photo coupler TLP521 17. ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge destruction) UNLESS , =25 2.60 3.10 V V FWD forward voltage drop VF Tj =25, - IC = 20A,VCIN =5V - 1.90 , PAGE REV. A5 OF 14 Direct Input (without Photo-Coupler) Interface Example +5V +15V ZD
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IM13400 MM13400004 E204652

IM14400

Abstract: 600v 30a : 600V/1A ( Ultra-Fast recovery diode ) 11. ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge destruction) UNLESS OTHERWISE SPECIFIED TOLERQNCES ON X = ± X.X = , ( Ultra-Fast recovery diode ) 15. Q1 : NPN transistor 2N3904 16. U1 : Photo coupler TLP521 17.ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge destruction) UNLESS , . Max. Unit - Condition VCC=VB1S1,B2S2,B3S3=15V, IC =30A, VCIN = 0V, Tj=25 2.60 3.10
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IM14400 MM14400008 600v 30a diode zener c2 6 ac drive circuit diagram diode zener ZD 103

KDZ20VV

Abstract: . · Normal Voltage Tolerance about ± 6 % . KDZ2.0W -36W ZENER DIODE SILICON EPITAXIAL PLANAR DIODE , ZB ZC ZD ZE ZF ZG ZH Y AY BY CY DY EY FY GY HY Marking T pe No . Marking T pe No . KDZ4 , =25°C) Zener Voltage Vz (V) TYPE No. Grade Min. KDZ2.0VV Y KDZ2.2VV Y KDZ2.4VV Y KDZ2.7VV Y KDZ3.0VV Y KDZ3 , 1000 0.5 20 1.0 2.65 2.80 2.90 3.20 5 120 5 1000 0.5 50 1.0 2.40 2.50 2.60 2.90 5 110 5 1000 0.5 120 1.0 2.16 2.28 2.38 2.60 5 100 5 1000 0.5 120 1.0 1.95 2.05 2.15 2.38 5 100 5 1000 0.5 120 1.0 1.85 Max
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OCR Scan
KDZ20VV KDZ10VV KDZ11VV KDZ12VV KDZ13VV KDZ15VV KDZ16VV

IM14400-E

Abstract: MM14400E09 . C5 : 0.22 ~ 2F ( Ceramic ) 10. D1 : 600V/1A ( Ultra-Fast recovery diode ) 11. ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge destruction) UNLESS OTHERWISE , : Photo coupler TLP521 17.ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent , . Max. Unit - Condition VCC=VB1S1,B2S2,B3S3=15V, IC =30A, VCIN = 0V, Tj=25 2.00 2.60 , (without Photo-Coupler) Interface Example +15V ZD R1 R2 R2 R2 R2 R2 C2 4 3 VS1
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IM14400-E MM14400E09 IM14400E 2500V

IM15400

Abstract: diode zener ZD 260 : 0.22 ~ 2F ( Ceramic ) 10. D1 : 600V/1A ( Ultra-Fast recovery diode ) 11. ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge destruction) UNLESS OTHERWISE SPECIFIED , coupler TLP521 17.ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge , =25 2.60 3.10 V V FWD forward voltage drop VF Tj =25, - IC = 40A,VCIN =5V - 1.90 , Photo-Coupler) Interface Example +5V +15V ZD R1 R2 R2 R2 R2 R2 C2 4 3 VS1 VB1 2
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IM15400 MM15400002 diode zener ZD 260

MM13400E05

Abstract: fin heat sink igbt : 0.22 ~ 2F ( Ceramic ) 10. D1 : 600V/1A ( Ultra-Fast recovery diode ) 11. ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge destruction) UNLESS OTHERWISE SPECIFIED , coupler TLP521 17.ZD : 24V/1W Zener diode ( It is recommended to insert a Zener diode to prevent surge , =25 2.00 2.60 V V FWD forward voltage drop VF Tj =25, - IC = 20A,VCIN =5V - 1.90 , Photo-Coupler) Interface Example +5V +15V ZD R2 R2 R2 R2 R2 C2 4 3 VS1 VB1 2 VCC
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MM13400E05 fin heat sink igbt IM13400-E

diode zener ZL 27

Abstract: diode zener ZD 260 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B Features C A Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±5% D , BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical Characteristics Ta = 25 , Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener Breakdown Characteristics , 0.091 0.106 C 0.25 0.40 0.010 0.016 High temperature soldering guaranteed: 260 °C
Taiwan Semiconductor
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diode zener ZL 27 diode zener smd zk Zener diode zf 2.7 smd diode MARKING ZK diode zener ZD 15 diode zd 329 MIL-STD-202 BZT52C

VBUS054B-HSF

Abstract: zener diode U3 Marking knowledge: A Zener- or Avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or , 260 °C/10 s at terminals Absolute Maximum Ratings Rating Test condition Pin 1, 3, 4 or 6 to Pin 2 , transients will be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS , current-voltage-curve of such diodes, these diodes are generally called "Z-Diode" (= Zener or Avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to
Vishay Semiconductors
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VBUS054B-HSF zener diode U3 Marking marking dC LLP75-6L 2002/95/EC 2002/96/EC VBUS054B-HSF-GS08 J-STD-020

diode zener ZD 15

Abstract: diode zener ZD 260 -May-08 VBUS054B-HS3 Vishay Semiconductors Background knowledge: A zener- or avalanche diode is an ideal device for , V-0 MSL level 1 (according J-STD-020) 260 °C/10 s at terminals Device name VBUS054B-HS3 , be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin , generally called "Z-diode" (= zener or avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short current in the pulse to ground without
Vishay Semiconductors
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LLP75-6A ZD 260 zener diode marking code 15 VBUS054B-HS3-GS08 D-74025

smd zm diode

Abstract: BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode SOD-323F B C Features A ­Wide zener voltage range selection : 2.4V to 75V ­VZ Tolerance Selection of ±5% D , : D10 BZT52C2V4S-BZT52C75S 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Electrical , 200mW, 5% Tolerance SMD Zener Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Zener , guaranteed: 260 °C/10s D 1.60 1.80 0.063 0.071 ­Polarity : Indicated by cathode band E
Taiwan Semiconductor
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smd zm diode

LLP1010-5L

Abstract: pndiode I V E R 2 IC D2GND 21507 Background knowledge: A zener- or avalanche diode is an , (according J-STD-020) 260 °C/10 s at terminals Absolute Maximum Ratings Rating Test conditions , of such diodes, these diodes are generally called "Z-diode" (= zener or avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short , the silicon chip (crystal). The bigger the active area the higher the current that the diode can
Vishay Semiconductors
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LLP1010-5L pndiode 21505 d2zd DAP 011 diode zener ZD 150 VBUS054DD-HF4 VBUS054DD-HF4-GS08

VBUS054B-HS3-GS08

Abstract: marking code U6 -0 Moisture sensitivity level MSL level 1 (according J-STD-020) Soldering conditions 260 °C/10 s at terminals , working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The high speed , . 1.4, 07-Oct-08 VBUS054B-HS3 Vishay Semiconductors Background knowledge: A zener- or avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage transients down to low , current-voltage-curve of such diodes, these diodes are generally called "Z-diode" (= zener or avalanche diodes). An
Vishay Semiconductors
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marking code U6 2011/65/EU
Abstract: Vishay Semiconductors BACKGROUND KNOWLEDGE: A zener- or avalanche diode is an ideal device for , called "Z-diode" (= zener or avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short current in the pulse to ground without being , SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE , be clamped close above the 5 V working range. An avalanche diode clamps the supply line (VBUS at pin Vishay Semiconductors
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IEC61000-4-2

diode marking code U6

Abstract: LLP75-6A , 26-Apr-07 VBUS054B-HS3 Vishay Semiconductors Background knowledge: A Zener- or Avalanche diode , (according J-STD-020) 260 °C/10 s at terminals Device name VBUS054B-HS3 Absolute Maximum Ratings , positive transients will be clamped close above the 5 V working range. An avalanche diode clamps the , such diodes, these diodes are generally called "Z-Diode" (= Zener or Avalanche diodes). An equally important parameter for a protection diode is the ESD- and surge-power that allows the diode to short
Vishay Semiconductors
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diode marking code U6
Abstract: SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE , working range. An avalanche diode clamps the supply line (VBUS at pin 5) to ground (pin 2). The high speed , , 21-Oct-10 VBUS054B-HSF 4-Line BUS-port ESD-Protection BACKGROUND KNOWLEDGE: A zener- or avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage transients down to , current-voltage-curve of such diodes, these diodes are generally called "Z-diode" (= zener or avalanche diodes). An Vishay Semiconductors
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zener diode U3 Marking

Abstract: z-diode marking code : A Zener- or Avalanche diode is an ideal device for "cutting" or "clamping" voltage spikes or voltage , LLP75-6L U3 4.2 mg UL 94 V-0 260 °C/10 s at terminals Thermal Data Parameter Operating , range. An avalanche diode clamps the supply line (VBUS at Pin 5) to ground (Pin 2). The high speed data , generally called "Z-Diode" (= Zener or Avalanche diodes). An other important parameter of a protection diode (Z-diode made for over voltage protection) is the ESD- and surge-power the diode can short to
Vishay Semiconductors
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z-diode marking code
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