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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
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LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode t2d 05

Catalog Datasheet MFG & Type PDF Document Tags

T2D DIODE

Abstract: T2D 70 diode current Vr = 30 V /H - 50 nA Diode capacitance Vr= 10 V,/= 1 MHz Vr = 0 V,/= 100 MHz Ct - 0.55 0.35 0.5 , SIEMENS Silicon PIN Diode BA 389 â'¢ Current-controlled RF resistor for switching and attenuating ,   fl235b05 00fc,b5bM T2D â  Powered by ICminer.com Electronic-Library Service CopyRight 2003 BA 389 Forward characteristics If =/(Vf) Parallel conductance gt =/(Vr) Forward resistance /ï=/(/f) /= 100 MHz Diode capacitance Cr =/(Vr) -.3 BA 369 rf il 10"' 10° 101 mA 102 1.0 c pF t 0.9 | 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0
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t2d diode

Abstract: T2D 80 diode Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 8.0 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , :IR(nA) Tj=125°C 10000 Tj=150°C 1000 Tj=75°C 100 Tj=25°C 10 Tj=75°C 0.01 per diode
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t2d diode T2D 80 diode T2D 40 DIODE T2D 80_ diode RFN20 DIODE T2D DIODE 60 R1120A

T2D DIODE

Abstract: T2D DIODE 02 Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN16T2DFH Applications General , 5.0±0.2 RFN16 T2D â'  Construction Silicon epitaxial planer 1.2 1.3 14.0±0.5 13.5MIN , Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak , '«150 Duty≤0.5 Direct voltage ï'°C ï'°C Conditions Min. Typ. Max. Unit IF=8A ï , ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode www.rohm.com © 2011 ROHM Co., Ltd
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T2D DIODE 02

T2D 40 DIODE

Abstract: Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN20T2DFH Applications General , 12.0±0.2 14.0±0.5 1.2 1.3 0.8 13.5MIN 5.0±0.2 RFN20 T2D â'  Construction Silicon , ) Conditions Limits 200 200 Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one , V ï'­55 to ï'«150 Duty≤0.5 Direct voltage ï'°C ï'°C Conditions Min. Typ , Rth(j-c) junction to case ï¼ ï¼ 2.0 °C/W Thermal Resistance * per diode
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T2D DIODE

Abstract: T2D 16 DIODE RFN16T2D Data Sheet Super Fast Recovery Diode RFN16T2D Applications General rectification , Construction Silicon epitaxial planer RFN16 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 0.7±0.1 0.05 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD
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T2D 16 DIODE T2D DIODE 25 diode t2d 05 jc-115 diode t2d 80 T2d 30 diode

T2D diode

Abstract: diode t2d Data Sheet Super Fast Recovery Diode RFN16T2D Applications General rectification Dimensions , Silicon epitaxial planer RFN16 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 0.7±0.1 0.05 15.0±0.4 , A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle peak value, Tj , Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=8A VR=200V IF=0.5A,IR=1A,Irr=0.25×I R , =125°C 1 Tj=150°C Tj=25°C Tj=75°C 100 0.1 Tj=75°C 0.01 per diode 0.001 0 500 1000 1500 FORWARD
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diode t2d

T2D diode

Abstract: T2D 80 diode RFN20T2D Data Sheet Super Fast Recovery Diode RFN20T2D Applications General rectification , Construction Silicon epitaxial planer RFN20 T2D 8.0±0.2 12.0±0.2 14.0±0.5 13.5MIN 15.0±0.4 0.2 , 150 Unit V V A A C C Tc=100°C 1/2Io at per diode 60Hz half sin wave, Non-repetitive one cycle , current Reverse recovery time Thermal Resistance * per diode IR trr Rth(j-c) Conditions IF=10A VR , diode 0.001 0 500 1000 1500 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS per diode 1 0 50 100 150 200
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T2D 09 diode T2D 55 diode T2D 1 DIODE T2D 05 DIODE RFN-20 T2D 35

T2D DIODE 02

Abstract: T2D DIODE Data Sheet AEC-Q101 Qualified Super Fast Recovery Diode RFN10T2DFH Applications General , T2D â'  14.0±0.5 3)Low switching loss 8.0±0.2 12.0±0.2 Features 1)Cathode common , week factory) Conditions Limits 200 200 Tc=122°C 1/2Io at per diode 60Hz half sin wave , ï'­55 to ï'«150 Duty≤0.5 Direct voltage Unit V V ï'°C ï'°C Conditions Min , ns Rth(j-c) junction to case ï¼ ï¼ 2.5 °C/W Thermal Resistance * per diode
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T2D DIODE 16 RFN10

T2D 24 DIODE

Abstract: T2d 43 diode DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current Is Drain-Source Diode Forward Voltage V so 0 VGS= Reverse Recovery Time V V - , Threshold Variation with Temperature. NDT455N Rev.F 34^74 OQBSnS T2D Typical Electrical Characteristics -50 -25 50 75 100 25 T j , JUNCTION TEMPERATURE (°C) 125 150 0.2 0.5 V 1 2 5 0.2 0.4 0.6 0.8 1 1.2 VSD, BOOY DIODE FORWARD VOLTAGE (V) Figure
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T2D 24 DIODE T2d 43 diode T2D 65 DIODE T2d 61 diode T2D DIODE 42 T2D 04 DIODE

T2D 22 diode

Abstract: T2D 56 DIODE max. 50 W Junction temperature Ti max. 150 °C D.C. current gain - I C = 0.5 , ) Collector current (d.c.) - V ebo - 'c Collector current (peak value) - ' cm Reverse diode , A; â'"V CE â' 3 V Diode, forward voltage l F = 1,5 A Switching times (between 10% and 90 , multiplying factor at the 496 Y March 1986 bbSBTBl DDBMbbS T2D tp (s) V q EO max
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T2D 22 diode T2D 56 DIODE T2D 70 diode BDT60 BDT60B BDT61 BDT61A BDT61B BDT61C

T2D 96 diode

Abstract: T2D 78 diode Symbol Unit -0 .5 to 7 Supply Voltage v cc V V V| DC Input Voltage â'"0.5 to Vqq + 0.5 Vo DC Output Voltage -0 .5 to V c c + 0 5 V l|K DC Input Diode Current ± 20 mA â'¢ok DC Output Diode Current ± 20 mA 'o DC Output Source Sink Current , CHARACTERISTICS T2D â  S ^ Parameter Vcc V|H High Level Input Voltage 2.0 4.5 6.0 1.5 , 4.2 â'" â'" â'" 1.5 3.15 4.2 â'" 0.5 1.35 1.8 â'" â'" â'" 0.5 1.35 1.8
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T2D 96 diode T2D 78 diode T2D 44 diode t2d 76 diode value T2D 19 diode T2D DIODE 29 M54HC365/366 M74HC365/366 HC365 HC366 M54/74HC365 M54/74HC366

T2D DIODE

Abstract: T2D DIODE 64 Vcc DC supply voltage -0.5 to +4.6 V l|k DC input diode current V| , 2.0 2.2 VCc = 2.7V; Iql = 100nA 0.1 0.2 VCC = 2.7V; Iol = 24mA 0.3 0.5 Vol Low-level output voltage Vcc = 3.0V; Iol= 16mA 0.25 0.4 V VCC = 3.0V; l0L = 32mA 0.3 0.5 Vcc = 3.0V; Iql
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T2D DIODE 64 T2D DIODE 32 T2D DIODE 46 t2d 63 diode IN T2D DIODE T2D DIODE 63 74LVT273 LVT273 74LVT

T2D DIODE 34

Abstract: Diode T2D od -2 P T.2D h -0 . -o . °b -Qb ha- 1.2D 'Oc-he^" 'Od-hd - -Oe -ö c -Od , Characteristics Symbol Min V|H V|L VCD VOH Input HIGH Voltage Input LOW Voltage Input Clamp Diode Voltage Output , 2.5 2.7 0.5 0.5 20.0 5.0 100 7.0 250 50 2.0 0.8 - 1 .2 54F/74F Typ Max V V V Min Recognized as a HIGH
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T2D DIODE 34 Diode T2D od T2D 75 diode T2D 95 diode T2D 85 diode T2D DIODE 06 54F/74F398 54F/74F399 74F398PC 54F398DM 74F398SC 54F398FM

T2D DIODE 46

Abstract: T2D DIODE 48 Voltage .-0.5 V to + 7.0V DC Output Current (Maximum Sink Current/Pin) . 120 mA , Diode Voltage Vrr=Min. I[N=-1« mA -0.7 -1.2 V Ii Input 1IIOH Current V{ ('=Maxâ'ž V!N=V{'( 5 H-A , Current ( ITL inputs) VCc=Max., V1N=3.4V,I81 fi =0, Outputs Open 0.5 2.0 mA Uri) Dynamic Power Supply , C'Y74Fi,T74()('":TSOr S5 20-1 ead (300-Mil) Molded SOIT ( Y74FC T240CTQC 05 20-Lead (150-Mil) QSOP 4.7 , ( â'¢Y74KC,r240TQC; Q5 20-Lead (150-Mil) QSOP Qil ( 'YSdRf T2d(ITn\/TR ni, mi.
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T2D DIODE 48 T2D 78 T2D DIODE 41 T2D 41 DIODE T2D 47 DIODE diode 78 t2d CY54/74FCT240T CY54/74FCT244T FCT240T FCT244T Y54FC T240ATLMB

T2D 85 diode

Abstract: FBC 320 THREE-STATE BUFFER 4 * I bu T 2 c/ bU T2D CONTROL LOGIC - LATCH D ^ dacd , ±1/8 ±1/2 ±1/2 ±1/4 ±1/4 ±1/8 ±1/8 Gain Error (% FSR) ±1.8 ±0.9 ±0.5 ±1.8 ±0.9 ±0.5 ±1.8 ±0.9 ±0.5 ±1.8 ±0.9 ±0.5 ±1.8 ±1.8 ±0.9 ±0.9 ±0.5 ±0.5 PIN CONFIGURATIONS buT A 1 V REFA Vdd , % FSR ± 0.8 ± 1.8 ±0.9 ±0.5 ±2 ppm/°C ppm/% Using Internal Rp ? Digital Inputs - V r,i , . +7 V Digital Input Voltage to GND (2) . G ND-0.5 to V d d +0 5 V lo im .lo U T 2 to G N D (2
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FBC 320 MP7628

T2D 24 DIODE

Abstract: T2d 43 diode utput D Current Output D 31 32 l0U T2D 30 31 CS Chip Select Current Output D , â'" 0.5 to Vqq +0.5 Any V REp to A G N D , should be protected by Schottky diode clamps (H P5082-2835) from input pin to the supplies. A ll inputs
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MP7680 P7680 QDQ741Q

diode t2d 77

Abstract: T2D 21 diode DBO DB1 DB2 DB3 DB4 DB5 DB6 DB7 A/B RAN D 3T DSS V refo R fbd !o UT1D lO U T 2 C / ,O U T2D , . +7 V Digital Input Voltage to G N D (2) . GND - 0 .5 to V dd +0.5 V bun. I0 U T 2 Storage , ) . G N D -0 .5 to V DD+0.5 V V REF: to GND , by Schottky diode clamps (H P5082-2835) from input pin to the supplies. 2 ^ TM 4-213
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diode t2d 77 T2D 21 diode FBC 320 a BA 4213 T2D 27 diode T2D 77 MP7529B P7628

T2D 87 diode

Abstract: T2D 49 DIODE ) mJ dv/dt Peak Diode Recovery dv/dt ® 55 (See Fig. 30) V/ns Tj t STG Operating , /iA V q s â' 05 x Max. Rating, V q s * 0V VDS x 0£ x Max. Rating V q s - 0V, T j - 125*C -20V V q s - 12V, lD - 14A nC V q s - 0.5 x Max. Rating See Fig. 23 and 31 VDD - 50V, lD - 14A, Rq , - pF V q s - OV, VDS - 25V f = 1.0 MHz See Fig. 22 Source-Drain Diode Ratings and Characteristics © Parameter Min. Typ. Max. â s Continuous Source Current (Body Diode) â
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T2D 87 diode T2D 49 DIODE Rectifier t2d IRHM7130 IRHM8130 1X106 4A55452 IRHM7130D IRHM7130U

T2D DIODE

Abstract: T2D 79 diode Rating -0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 37.5 10:1 -40 to +85 -55 to +150 Unit V DC , =+85 °C, VCC=2.7V, VAPC1 2 = 2.6V At Po u t , m a x . V Cc = 3 - 5 V A t p OUT,MAX> V CC= 3 .0 V PoU T=+2°d , , m a x p o u t < p o u t , m a x -5 dB 4.5-j3.9 2.6 0.2 2.5 0.2 0.5 2.6 0.5 2.85 Q , common inductance. Control input for the PIN diode. The purpose of the PIN diode is to attenuate the RF , match when the bias of the input stage is turned off. When this pin is "high" the PIN diode control is
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T2D 79 diode Diode T2D 79 t2d 68 diode value t2d 17 diode DCS1800 DCS1900 F2140 1700M F2138 RF2140

T2D 79 diode

Abstract: T2D diode Rating -0.5 to +6.0 -0.5 to +3.0 -0.5 to +3.0 1500 +13 37.5 10:1 -40 to +85 -55 to +150 Unit V DC , = 3 .0 V PoU T=+2°d B m POUT=+10dBm RBW =100kHz, 1805MHz to 1880MHz and 1930MHz to 1990MHz , u t < p o u t , m a x p o u t < p o u t , m a x -5 dB 4.5-j3.9 2.6 0.2 2.5 0.2 0.5 2.6 0.5 , ground slug. Control input for the PIN diode. The purpose of the PIN diode is to attenuate the RF input , when the bias of the input stage is turned off. When this pin is "high" the PIN diode control is turned
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T2D DIODE 79 diode T2D series T2D 26 diode
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