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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode t25 4 L5

Catalog Datasheet MFG & Type PDF Document Tags

diode t25 4 L5

Abstract: 09N70P 4 V gfs Forward Transconductance VDS=10V, ID=4.5A - 4.5 - S IDSS , A - - 1.5 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions Continuous Source Current (Body Diode) VD=VG=0V , VS=1.5V 1 Pulsed Source Current (Body Diode) Forward , junction temperature. o 2. Starting T=25 C , VDD=50V , L=6.8mH , RG=25â"¦ , IAS=9A. j 3. Pulse test - , =150 C 8 ID , Drain Current (A) T C =25 o C 6 4 4.5V 6 4 4.0V 2 2 V G =
Advanced Power Electronics
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diode t25 4 j5

Abstract: diode t25 4 c5 L2 C11 L5 C9 J5 Notes: 1. 2. 3. 4. 5. 6. 7. 8. 9. 10. 11. 12. 13. 14. 15. See PC , Figure vs. Frequency 10 8 NF (dB) NF (dB) Noise Figure vs. Bias Voltage 10 8 6 4 2 0 4.75 T=+25° C , . Pin Configuration Pin # 1 2, 4, 5 3 6, 7 8 Backside Paddle Symbol Vbias N/C RF_in RF_Out Iref RF , . Frequency Gain Input Return Loss Output Return Loss Output P1dB Output IP3 [See note 4] WCDMA Channel Power , Notes: 4. OIP3 is measured with two tones at an output power of 20 dBm/tone for 750 MHz, 22 dBm/tone for
TriQuint Semiconductor
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diode Zener t25 4 c5

Abstract: diode gp 434 250 mA 4 V VDS(ON) VGS = 10 V ID = 10 A 3 V 125 V 1.5 GFS VDS = 10 , ) C, CAPACITANCE (pF) 10000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C , 2.5 3 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE , =7 A 1.05 Id=11 A 1 0.95 Id=4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 , =2 x 250mA F=175Mhz 100 T=-20 °C 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq
STMicroelectronics
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RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz

Abstract: MARCON NH capacitor 1000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 , Id=4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 -25 0 25 50 75 , =175Mhz 100 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 0 0 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 Pin, INPUT
STMicroelectronics
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diode t25 4 L5

Abstract: 4 carbon wire resistor Resistor 6.6 V Zener Diode 10 nH Inductor 40 nH Inductor 70 nH Inductor SD2932 M244 (.400 x .860 4 , VGS = 20 V VDS = 0 V 5 µA VGS(Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS , (pF) 10000 Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C , 3.5 4 4.5 5 5.5 6 VGS, GATE-SOURCE VOLTAGE (V) VGS, GATE-SOURCE VOLTAGE , Id=11 A 1 0.95 Id=4 A 0.9 Id=1 A Id=2 A Id=.1 A 0.85 Id=.25 A 0.8 -25 0
STMicroelectronics
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diode t25 4 L5 4 carbon wire resistor ceramic capacitor 4.7 mf 50v variable resistor 4.7 k ohms diode L2.70 inductor vk200 1020876B

RG316-25

Abstract: 25 ohm semirigid (Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS = 10 V ID = 10 A 3 V IDS = , 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 5.5 6 , Temperature 1.15 1.1 Id=5 A Id=9 A Id=10 A Id=7 A 1.05 Id=11 A 1 0.95 Id=4 A 0.9 , Vdd=50 V 400 Vdd=40 V 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 T=-20 °C T=+25 °C
STMicroelectronics
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RG316-25 25 ohm semirigid 850 ohm potentiometer RF TRANSFORMER, PIN THRU MOUNT, 2-30 MHz VK200 INDUCTOR vk200 ferrite bead

NEOSId

Abstract: RG316-25 POWER (W) Pout, OUTPUT POWER (W) T=-20 °C T=+25 °C 500 400 300 200 100 0 0 2 4 6 8 10 12 14 16 , VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 5 480 190 18 1.5 Min. 125 5 5 4 3 Typ , , CAPACITANCE (pF) Vds=10 V T=-20 °C T=+25 °C 15 1000 Ciss Coss 10 T=+80 °C 100 5 Crss 10 0 10 20 30 40 50 0 2 2.5 3 3.5 4 4.5 5 5.5 6 VDS, DRAIN-SOURCE VOLTAGE (V) VGS , 1.1 Id=10 A Id=9 A Id=5 A Id=7 A 1.05 Id=11 A 1 0.95 Id=4 A 0.9 Id=2 A Id=.1 A Id=1 A
STMicroelectronics
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NEOSId 7163911B

RG316-25

Abstract: diode Zener t25 4 c8 = 20 V VDS = 0 V 250 nA VGS(Q) VDS = 10 V ID = 250 mA 4 V VDS(ON) VGS , Ciss Coss 100 Crss 10 T=-20 °C Vds=10 V T=+25 °C 15 T=+80 °C 10 5 0 0 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 2 2.5 3 3.5 4 4.5 5 , . Case Temperature 1.15 1.1 Id=5 A Id=9 A Id=10 A Id=7 A 1.05 Id=11 A 1 0.95 Id=4 , 500 T=+25 °C 400 T=+80 °C 300 200 Vdd=50V Idq=2 x 250mA F=175Mhz 100 0 0 0 2
STMicroelectronics
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diode Zener t25 4 c8 T20 88 DIODE Fair-Rite ATC MF variable CAPACITOR 50v T20 56 diode RESISTOR AXIAL

diode T25 4 F8

Abstract: diode t25 4 L5 !"# SRV05-4 Features · · · · · ESD Protection for High-Speed Data Lines Low Capacitance Low , Rating 94V-0 300W Low Capacitance TVS Diode Array SOT-23-6L Absolute maximum Ratings Symbol PPK , to 2 Reverse Leakage Current @VRWM=5V, T=25, Pin 5 to 2 Forward Voltage Drop @If=10mA Clamping , ground Pin Capacitance to ground, Pins1,3,4,6,VR=0V, f=1MHz Pin Capacitance Pin 5 to 2,VR=0V, f=1MHz Min , 1.80 2.00 2.82 3.02 -0.10 1.05 1.15 0.30 0.60 0.10 0.20 NOTE CJ (Top View) Marking : L5
Micro Commercial Components
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diode T25 4 F8 T25 4 F8 SRV05-4 IEC6100-4-2
Abstract: Voltage Single Pulse Avalanche Energy © Peak Diode Recovery dv/dt ® Junction and Storage Temperature , )* Junction-to-Ambient Min. â'" Typ â'" â'" * When mounted on 1" square PCB (FR-4 or G-10 Material). For , Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) © Diode Forward Voltage , ¡ MOSFET symbol showing the / I , integral reverse G\ p s p-n junction diode. Tj=25°C, ls=14A, Vqs , °C 1440 , â  4 0 5 5 4 5 2 O D IS'ibO I S b â  IN R i^Ri_IRLR024 -
OCR Scan
IRLU024 46S5452 T0-251AA 150KQ

SD2932

Abstract: ST40 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 , . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . , SD2932 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static (per section
STMicroelectronics
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ST40 diode Zener t25 4 c5 SD2932 reference 200B 700B RG316

inductor vk200

Abstract: 10A ferrite bead . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 , . . 4 3 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . , SD2932 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static (per section
STMicroelectronics
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10A ferrite bead ZENER MARKING C8 ST VK200 FERRITE MARKING code mf stmicroelectronics resistor 220 ohm SURFACE MOUNT rf TRANSFORMER

ZENER MARKING C8 ST

Abstract: CAPACITOR 64 680 4J characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Static . . . , 4 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 4 Impedance data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , oC 2.1 Static Table 4. Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS VGS (1) Static (per , VDS = 50 V VDS = 50 V VDS = 50 V f = 1 MHz f = 1 MHz f = 1 MHz 480 190 18 5 200 1.5 Min 125 50 250 4 3
STMicroelectronics
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SD2932W CAPACITOR 64 680 4J diode marking 100b
Abstract: . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Static . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.2 Dynamic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 , . . . . . 5 4 Typical performances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , SD2932 Electrical characteristics TCASE = +25 oC 2.1 Static Table 4. Static (per section STMicroelectronics
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diode t25 4 H9

Abstract: diode t25 4 B8 J2 J1 J6 J5 K4 K3 K2 K1 K9 J8 K6 K5 K8 K7 L3 L2 L5 L4 K2 K1 K9 J8 K6 K5 K8 K7 L3 L2 L5 L4 L7 L6 L8 M6 M7 L7 L6 L8 M6 M7 M4 M5 M4 M5 N6 N7 , N19 N27 P27 P26 P25 P23 R23 R24 T32 T31 R25 R26 T30 T29 T28 T27 T25 N5 M2 N4 , R26 T28 U27 T21 T22 U26 U25 T19 T20 V27 V28 T23 T24 R19 V26 V25 T26 T25 W28 W27 , PLL6_OUT0n PLL6_OUT0p AD17 AA19 AG16 AB18 AH16 AD16 Y18 AF16 AE16 V18 W18 AA18 Page 4 of
Altera
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diode t25 4 H9 diode t25 4 B8 diode t25 4 G9 diode t25 4 k6 diode t25 4 H8 diode t25 4 e9 EP1S25 PT-EP1S25-3

diode t25 4 L8

Abstract: diode t25 4 j6 (Table 1) and the recommended values. P2 DIS4 DIS2 ALARM OUT1 ALARM OUT3 1 3 5 2 4 6 DIS3 DIS1 L5 ALARM , Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers · CWDM/WWDM 4-Channel Parallel Links · , channel and modulating currents from 3mA to 50mA per channel. RF3764 may be used in 4-fiber or 4 , Bias Current Control Range Ch 2 LD Ch 3 LD Ch 4 LD 2UGHULQJ ,QIRUPDWLRQ RF3764 Quad-Channel Edge Emitting Laser Driver (4x3.125Gbps) Failure Alarm FA 1 FA 2 FA 3 FA 4
RF Micro Devices
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diode t25 4 L8 diode t25 4 j6 diodes t25 4 l7 FR4 dielectric constant 4.6 diode t25 4 j8 RO4003

diode t25 4 j6

Abstract: t25 4 j6 Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4. Transient Current of Laser Diode , Board (Table 1) and the recommended values. DIS4 DIS2 ALARM OUT1 ALARM OUT3 1 3 5 P2 2 4 6 DIS3 DIS1 L5 , ALARM OUT1 ALARM OUT3 1 3 5 P2 2 4 6 DIS3 DIS1 L5 ALARM OUT2 ALARM OUT4 P1 1 2 C2 10 nF C3 10 nF C1 10 , Transceivers · CWDM/WWDM 4-Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4-fiber or 4-wavelength quad-channel fiber optic transceiver applications operating in excess
RF Micro Devices
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t25 4 j6 DFB laser bare die Edge-Emitting Diode
Abstract: 3 4 DIS1 ALARM OUT1 5 6 ALARM OUT2 Ferrite ALARM OUT4 R13 75 â"¦ L5 , Applications â'¢ Quad-Channel Gigabit and 10Gigabit Ethernet Optical Transceivers â'¢ CWDM/WWDM 4 , in 4-fiber or 4-wavelength quad-channel fiber optic transceiver applications operating in excess of , Quiescent Current Ch 1 LD Ch 2 LD Ch 3 LD Ch 4 LD â'¢ Common Anode Laser Driver â , Information RF3764 Failure Alarm FA 1 FA 2 FA 3 FA 4 Functional Block Diagram Rev RF Micro Devices
Original

DFB laser bare die

Abstract: diode t25 4 j6 Digital 1 Digital 0 IBias + IMod IBias + (IMod/2) IBias Figure 4. Transient Current of Laser Diode , Board (Table 1) and the recommended values. DIS4 DIS2 ALARM OUT1 ALARM OUT3 1 3 5 P2 2 4 6 DIS3 DIS1 L5 , ALARM OUT1 ALARM OUT3 1 3 5 P2 2 4 6 DIS3 DIS1 L5 ALARM OUT2 ALARM OUT4 P1 1 2 C2 10 nF C3 10 nF C1 10 , Transceivers · CWDM/WWDM 4-Channel Parallel Links Product Description The RFW3764 is a quad-channel integrated , used in 4-fiber or 4-wavelength quad-channel fiber optic transceiver applications operating in excess
RF Micro Devices
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IC LM3

diode t25 4 H9

Abstract: diode t25 4 L9 C1 D2 E3 E4 K4 K3 F3 F4 F1 F2 G5 G6 H8 G1 G2 G3 G4 K6 K5 H3 H4 L3 L2 L5 L4 C1 D2 E3 E4 K4 K3 F3 F4 F1 F2 G5 G6 H8 G1 G2 G3 G4 K6 K5 H3 H4 L3 L2 L5 L4 , Y10 AA10 W10 V26 V25 T26 T25 W28 W27 U19 U20 W26 W25 U24 U23 Y28 Y27 U21 U22 Y26 , Y26 Y25 Y24 Y23 U22 U21 T21 T20 T25 T24 T19 R19 AE25 AF22 AF24 AE22 AB22 AE23 AC23 , Y26 Y25 Y24 Y23 U22 U21 T21 T20 T25 T24 T19 R19 T23 T22 T23 T22 R22 R23 V20
Altera
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diode t25 4 L9 diode t25 4 k8 diode t25 4 B9 diode t25 4 g8 diode t25 4 F7 diode AA19 EP1S10 PT-EP1S10-3 EP1S10F484
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