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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode sy 710

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diode sy 710

Abstract: sy 710 diode CURRENT TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE PART) 1 0° 2 3 5 710 5 2 3 4 5 7 TIME (si , TYPE ABSOLUTE MAXIMUM RATINGS Sy m b o l VCEX (SUSi VCEX V csc V ebo (c -1 c PC P a ra m e te r C o , torque - W e ig h t Ty p ica l va^ue î 1 00 ELECTRICAL CHARACTERISTICS Sy m b o i iCFX ic , r-e m ;ite r r e v e r s e v oltag e D C cu rre n t.g a in IC -3 0 Ö A (diode fo rw a rd voltage) !c= , COLLECTOR-EMITTER VOLTAGE 5 7103 VCE (V) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE
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diode sy 710

Abstract: sy 710 diode 16244A but has inverting outputs. QUICK REFERENCE DATA G ND = 0 V; Tamb = 25 °C ; tr = t> a 2.5 ns SY , , 23 24 SY M B O L 10Ë 1Y0 to 1Y3 G ND v cc 2Y0 to 2Y3 3Y0 to 3Y3 4Y 0 to 4Y3 4Ü E N A M E A N D FU NC , /line driver; inverting (3-State) 74LVC16240A RECOMMENDED OPERATING CONDITIONS LIM ITS SY M B O L , axim um Rating System (IEC 134) Voltages are referenced to G ND (ground = OV) LIMITS SY M B O L , diode current DC input voltage DC output diode current DC output voltage; output HIGH or LOW state DC
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diode sy 710 sy 710 diode DL 711 PHILIPS 74LVC

diode sy 710

Abstract: sy 710 diode Electrical Characteristics, at 7] = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current k Tc = 25 °C Inverse diode direct current,pulsed Tc = 25 °C Inverse diode forward voltage l^Gs = 0 V, /p = 5.4 A Reverse recovery time VR = 100 V, /F=% 6 if/d t = 100 , Forward characteristics of reverse diode f= C -f(Vbs) parameter: Vfcs = 0V, 1MHz /p = /( Vsd , ) parameter: /Dpute = 4A Drain-source breakdown voltage '''(BR)DSS = / ( 7j) 710 V 680 -60 -20
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buz77a C67078-S1320-A3

diode sy 710

Abstract: sy 710 diode mfn. Reverse Diode Inverse diode continuous forward current Is Tc = 25 °C Inverse diode direct current,pulsed 7b = 25 °C Inverse diode forward voltage Vos = 0 V, Ip = 8 A Reverse recovery time VR = 100 V, /F , . capacitances C = f {Vos) Forward characteristics of reverse diode h = /(^sd) parameter: 7j, ^ = 80 ps , ) parameter: /D !s = 7 A BUZ 90 T-, Drain-source breakdown voltage ^(BR)DSS = f( T \) 710 V , rrax. 0.0¿ 2) c^p -'"Tig 3) n c x . ` ¿.5 sy d'p fr r - 'r g sress b^rr n c x . 0.25 Semiconductor
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transistor buz 90 transistor buz 350 buz90 C67078-S1321-A2 D5155

diode sy 710

Abstract: sy 710 diode Rise Time tr 35 ns Turn-OFF Delay Time td(ofl) 115 ns Fall Time tf 95 ns Diode Forward , sy -3.0V â'" 2.8V " -2.6V -2.0 V -2.2V ( -2 -4 -6 -8 -10 , ) -0.1 3 F-1 .0 7-10 -8 -7 < -6 I -5 ID - VGS 3 o -4 -3 '3 a -i -i o i 0.7 a o. 6 i
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2SJ192

diode sy 710

Abstract: sy 710 diode M O S F E T sy m b o l sh o w in g the internal d evice ind u ctan ce s. V D D " 0 5 B V D S S ' ' d , Operation U NITR O D E CORPORATION . 5 FORBES ROAD LEXING TO N, MA 02173 TEL. (617) B61-6S40 TWX (710 , ing the integral reverse P-N junction rectifier. I3 M Pulse Source Current (Body Diode) O V so Diode Forward V o ltage ® Tc - 25«C. IS - 8.0A, VG S - OV TC - 2S«C, lS - 7.0A. V q s - OV T , ) UNtTRODE CORPORATION · 5 FORBES ROAD LEXINGTON, MA 02173 · TEL. (617) 861-6540 TWX (710) 326*6509 · TELEX
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FN121 V01T ufn120 UFN120 FN120 UFN122 UFN123 UFN121 67/D42Q

LX109

Abstract: Wide Load Current Range 700mA Guaranteed Output Current No Schottky Diode Required 35A Quiescent , does not require a schottky diode on the LX pin. At moderate to heavy loads, the converter operates in , 47pF R1 442k 1.8V COMP SY NC ADJ ILIM SC192 R2 309k C2 0.1uF C6 22uF TP6 SYNC R8 28k TP2 GND R3 100k R4 100k SY NC GND © 2007 Semtech Corp. 7 www.semtech.com SC192 POWER , R2 C5 47pF R1 442k VOUT COMP SY NC ADJ ILIM SC192 VIN 1 2 3 4 5 C1 4.7uF C3 0.1uF C4
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LX109 MLPD-10

diode sy 715

Abstract: SY 715 Schottky Diode Required 35µA Quiescent Current 100% Duty Cycle in Dropout 95% Efficiency Fast Transient , require a schottky diode on the LX pin. At moderate to heavy loads, the converter operates in the PWM , C4 470pF VIN BP PGND LX GND EN COMP SY NC ADJ ILIM TP5 VOUT 10 L1 , 100k TP2 GND C2 0.1uF C6 22uF TP6 SYNC SY NC R4 100k GND 2005 Semtech Corp , 3 4 5 C1 10uF C3 0.1uF VIN BP PGND LX GND EN COMP SY NC ADJ ILIM 10
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diode sy 715 SY 715 SC192EVB SC192IMLTR SC192IMLTRT

diode sy 710

Abstract: diode sy 715 Efficiency Over Wide Load Current Range 700mA Guaranteed Output Current No Schottky Diode Required 35A , an internal synchronous rectifier and does not require a schottky diode on the LX pin. At moderate , GND EN COMP SY NC ADJ ILIM TP5 VOUT 10 L1 9 1.8V 10uH 8 7 C5 47pF R1 442k 6 EN SC192 R2 309k R8 28k C2 0.1uF C6 22uF TP6 SYNC SY NC R3 , GND EN COMP SY NC ADJ C4 470pF ILIM 10 L1 9 VOUT 10uH 8 7 C5 47pF R1
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8-R 2R2
Abstract: Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A 2.7 7b = 25 °C Inverse diode direct current,pulsed few 7b = 25 °C 11 Inverse diode forward , diode C = f ( V DS) If = H V s d ) parameter: Vqs = OV, f = 1M H z parameter: 7¡, fp = 80 , ) parameter: lD pu|S = 4 A Rgs = 25 fí, L = 45.3 mH Drain-source breakdown voltage ^(BR)DSS = 710 , . '4 .5 sy dip iir r 'n g o^ess burr n a x . 0.05 Semiconductor Group 572 fl235bD5 OOÃ"MMl -
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sy 710 diode

Abstract: diode sy 715 Load Current Range 700mA Guaranteed Output Current No Schottky Diode Required 35µA Quiescent Current , LX 9 R1 V ou t = 0 .7 5 V to V in + C3 2 BP PGN D SY N C /PW M 10 7 R3 4 C5 C4 3 , synchronous rectifier and does not require a schottky diode on the LX pin. At moderate to heavy loads, the , J I LI M S C192 R2 30 9k C2 0. 1 uF C6 22 uF TP 6 SY N C R8 28 k TP 2 GN D R3 10 0k R4 10 0k SY N C GN D 2003 Semtech Corp. 7 www.semtech.com SC192 POWER MANAGEMENT
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MLP-10

diode sy 710

Abstract: MLPD-10 Output Current No Schottky Diode Required 35µA Quiescent Current 100% Duty Cycle in Dropout 95 , AD J + C3 R2 2 BP 10 PGN D 7 SY N C /PW M C4 Revision 6, April 07, 2004 , synchronous rectifier and does not require a schottky diode on the LX pin. At moderate to heavy loads, the , C192 R2 30 9k R8 28 k C2 0. 1 uF C6 22 uF TP 6 SY N C SY N C R3 10 0k TP 2 , Temperature Fosc (kHz) 760 755 750 Tem p = -40C 745 740 735 730 725 720 715 710 Tem p =
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C192

diode sy 710

Abstract: K685 1.54 V A W °C m fì mV mV/K 685 1.26 710 1.4 PINNING - SOT426 PIN DESCRIPTION PIN C O NF IG UR AT IO N SY M B O L 1 2 3 4 5 mb gate T1 (connected to mb) T2 source drain LIMITING , S = 0 V; Tj =175 °C 38 1.0 0.5 - 43 1.5 0.1 0.004 0.02 16 710 1.4 2.0 2.3 100 250 2 250 1 , VE RSE DIODE LIMITING VALUE S AND C H A R A C T E R IS T IC S Tj = 25 °C unless otherwise specified , Pulsed reverse drain current Diode forward voltage IF -20 A ; VG S- 0 V lF = 40 A ; VG S= 0 V -
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K685 BUK9120-48TC

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR o 705 o u 710 o u 711 0 u u 821 VK VK VQ u u u u u u u u u u u u u u u u u 107 108 109 111 , SS SSY ST X ST SU SU SY SY SY SY SY SY SY SY SY SY SY SY SY SY SY SY SY SZ X SZX X SZX SZX SZY SZY , collector cut-off current a t the em itter diode biased in the reserve direction high collector current low , Coding 52 IT r O il OZ [ 01 C DO [ 12 ]57 77 ]S2 lOUUt 'cc SY m RD Cl CZ v ~ n ZVE
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mikroelektronik ddr Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D diode sy-170 DDR-1026

d773

Abstract: diode sy 710 X IN G T O N , MA 02173 · T E L . (6171 861-6540 TW X (710) 326-6509 · T E L E X 95-1064 2-321 , A R A CTER ISTICS Ig Continuous Source Current (Body Diode) UFN820 UFN821 UF^822 UFN823 *SM Pulse Source Current (Body Diode) ® UFN820 UFN821 UFN822 UFN823 V$d Diode Forward V o ltage© UFN820 UFN821 , < 3 (X V $, Duty Cycle < 2 % . Fig. 1 - Typical Output Characteristics Sy|>. 3V 1 a w- V , ) 861-6540 TW X (710) 326*6509 · T E L E X 95-1064 2-322 PR IN TED IN U .S .A . UNITRODE CORP
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d773 UFN02O UFN022
Abstract: comparison is made. Reduced DV/DT on commutation - no snubber networks required No blocking diode , 34 ] N/C 33 ] N/C 32 ] R EVCLK 31 ] SY S C LK 30 ] R RAMP 29 ] V CC 28 ] SEN SE4 VM3 [ 11 , Schottky blocking diode to prevent current flow from the spinning motor to the power supply. During , feedback to the microprocessor on motor activity. 7-10 SSI 32M7011 Hal l-Sensor less Motor Speed , UNITS Fmax, S Y SC LK 1.0 2.0 4.5 MHz Twh, Twl, SY SC LK width high or low 40 -
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sy 710 diode

Abstract: IC 6757 greased F re e A ir O p e ra tio n BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS 's 'S M V) > *rr °R R , * 9 .0 * 12 15 1 .5 0 * A - M o d ifie d M O S F E T sy m b o l sh o w in g th e in tegral , ) 861-6540 TW X {710) 326-6509 T E L E X 95-1064 o - 1 .6 0 * 500 T j - 1 5 0 ° C , Ip = Ig M , ) 861-6540 TW X (710) 326*6509 · T E L E X 95-1064 2-50 P R IN T E D IN U .S A . 2N6757 JAN, JANTX , F O R B E S ROAD L E X IN G T O N , MA 02173 · T E L . (617) 861-6540 TW X (710) 326-6509 · T E L E
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2N6758 IC 6757 IL-S-19500/542A

AD712

Abstract: LT1057 , P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 Twx: 710/394-6577 , ±20 +36 ±50 mA Current Limit 'sc to Ground -33 Supply Current 'sY No Load Vo = 0V - 5.6 7.0 , Ground ±10 - ±60 ±18 - ±60 ±18 - ±60 mA Supply Current 'sY No Load V0 = OV - 5.6 7.0 - 5.6 7.0 - , Limit 'sc Output Shorted to Ground ±18 - ±60 mA Supply Current 'sY No Load Vo = 0V - 5.6 7.0 mA , Shorted to Ground ±20/±60 mAM IN/MAX Supply Current 'sY No Load v0 = ov 7.0 mA MAX Slew Rate SR Rl =
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OP-249 AD712 LT1057 OP-215 TL072 MC34082 OP-42 10OOV/

MIL-STD-83

Abstract: 9k22 *062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 Twx: 710/304-6577 Telex: 924491 Cable: ANALOG , OV. 2. The digital control inputs arc diode protected; however, permanent damage Cpay occur on , diode protected; however, permanent damage may occur on unconnected devices subject to high energy , ) LEAD HO 1 letHTTFICD SY Oar or mqtch leads ine soimr. on nN.nxreo köva* on auqy « 16-Pin Cerdip (Q
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AD7501 AD7503 AD7502 MIL-STD-83 9k22 cjj z5 AD750I 170X1 AD7501/AD7S03 AD75Q3
Abstract: internal diodes. Limit forward diode current to maximum current rating. 7-10 DG308A/DG309 caloric CORPORATION V ELECTRICAL CHARACTERISTICS3 LIM ITS SY M B O L 1 = 2 S °C 2 = 125, 8 5 , 70°C 3 = , . Limit forward diode current to maximum current ratings TEST CIRCUITS Figure 1. Switching Time with -
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