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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

diode sy 710

Catalog Datasheet MFG & Type PDF Document Tags

diode sy 710

Abstract: sy 710 diode CURRENT TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE PART) 1 0° 2 3 5 710 5 2 3 4 5 7 TIME (si , TYPE ABSOLUTE MAXIMUM RATINGS Sy m b o l VCEX (SUSi VCEX V csc V ebo (c -1 c PC P a ra m e te r C o , torque - W e ig h t Ty p ica l va^ue î 1 00 ELECTRICAL CHARACTERISTICS Sy m b o i iCFX ic , r-e m ;ite r r e v e r s e v oltag e D C cu rre n t.g a in IC -3 0 Ö A (diode fo rw a rd voltage) !c= , COLLECTOR-EMITTER VOLTAGE 5 7103 VCE (V) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE
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diode sy 710

Abstract: sy 710 diode 16244A but has inverting outputs. QUICK REFERENCE DATA G ND = 0 V; Tamb = 25 °C ; tr = t> a 2.5 ns SY , , 23 24 SY M B O L 10Ë 1Y0 to 1Y3 G ND v cc 2Y0 to 2Y3 3Y0 to 3Y3 4Y 0 to 4Y3 4Ü E N A M E A N D FU NC , /line driver; inverting (3-State) 74LVC16240A RECOMMENDED OPERATING CONDITIONS LIM ITS SY M B O L , axim um Rating System (IEC 134) Voltages are referenced to G ND (ground = OV) LIMITS SY M B O L , diode current DC input voltage DC output diode current DC output voltage; output HIGH or LOW state DC
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diode sy 710 sy 710 diode DL 711 PHILIPS 74LVC

diode sy 710

Abstract: sy 710 diode Electrical Characteristics, at 7] = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current k Tc = 25 °C Inverse diode direct current,pulsed Tc = 25 °C Inverse diode forward voltage l^Gs = 0 V, /p = 5.4 A Reverse recovery time VR = 100 V, /F=% 6 if/d t = 100 , Forward characteristics of reverse diode f= C -f(Vbs) parameter: Vfcs = 0V, 1MHz /p = /( Vsd , ) parameter: /Dpute = 4A Drain-source breakdown voltage '''(BR)DSS = / ( 7j) 710 V 680 -60 -20
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buz77a C67078-S1320-A3

diode sy 710

Abstract: sy 710 diode mfn. Reverse Diode Inverse diode continuous forward current Is Tc = 25 °C Inverse diode direct current,pulsed 7b = 25 °C Inverse diode forward voltage Vos = 0 V, Ip = 8 A Reverse recovery time VR = 100 V, /F , . capacitances C = f {Vos) Forward characteristics of reverse diode h = /(^sd) parameter: 7j, ^ = 80 ps , ) parameter: /D !s = 7 A BUZ 90 T-, Drain-source breakdown voltage ^(BR)DSS = f( T \) 710 V , rrax. 0.0¿ 2) c^p -'"Tig 3) n c x . ` ¿.5 sy d'p fr r - 'r g sress b^rr n c x . 0.25 Semiconductor
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transistor buz 90 transistor buz 350 buz90 C67078-S1321-A2 D5155

diode sy 710

Abstract: sy 710 diode Rise Time tr 35 ns Turn-OFF Delay Time td(ofl) 115 ns Fall Time tf 95 ns Diode Forward , sy -3.0V â'" 2.8V " -2.6V -2.0 V -2.2V ( -2 -4 -6 -8 -10 , ) -0.1 3 F-1 .0 7-10 -8 -7 < -6 I -5 ID - VGS 3 o -4 -3 '3 a -i -i o i 0.7 a o. 6 i
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2SJ192

diode sy 710

Abstract: sy 710 diode M O S F E T sy m b o l sh o w in g the internal d evice ind u ctan ce s. V D D " 0 5 B V D S S ' ' d , Operation U NITR O D E CORPORATION . 5 FORBES ROAD LEXING TO N, MA 02173 TEL. (617) B61-6S40 TWX (710 , ing the integral reverse P-N junction rectifier. I3 M Pulse Source Current (Body Diode) O V so Diode Forward V o ltage ® Tc - 25«C. IS - 8.0A, VG S - OV TC - 2S«C, lS - 7.0A. V q s - OV T , ) UNtTRODE CORPORATION · 5 FORBES ROAD LEXINGTON, MA 02173 · TEL. (617) 861-6540 TWX (710) 326*6509 · TELEX
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FN121 V01T ufn120 UFN120 FN120 UFN122 UFN123 UFN121 67/D42Q

LX109

Abstract: Wide Load Current Range 700mA Guaranteed Output Current No Schottky Diode Required 35A Quiescent , does not require a schottky diode on the LX pin. At moderate to heavy loads, the converter operates in , 47pF R1 442k 1.8V COMP SY NC ADJ ILIM SC192 R2 309k C2 0.1uF C6 22uF TP6 SYNC R8 28k TP2 GND R3 100k R4 100k SY NC GND © 2007 Semtech Corp. 7 www.semtech.com SC192 POWER , R2 C5 47pF R1 442k VOUT COMP SY NC ADJ ILIM SC192 VIN 1 2 3 4 5 C1 4.7uF C3 0.1uF C4
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LX109 MLPD-10

diode sy 715

Abstract: SY 715 Schottky Diode Required 35µA Quiescent Current 100% Duty Cycle in Dropout 95% Efficiency Fast Transient , require a schottky diode on the LX pin. At moderate to heavy loads, the converter operates in the PWM , C4 470pF VIN BP PGND LX GND EN COMP SY NC ADJ ILIM TP5 VOUT 10 L1 , 100k TP2 GND C2 0.1uF C6 22uF TP6 SYNC SY NC R4 100k GND 2005 Semtech Corp , 3 4 5 C1 10uF C3 0.1uF VIN BP PGND LX GND EN COMP SY NC ADJ ILIM 10
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diode sy 715 SY 715 SC192EVB SC192IMLTR SC192IMLTRT

diode sy 710

Abstract: diode sy 715 Efficiency Over Wide Load Current Range 700mA Guaranteed Output Current No Schottky Diode Required 35A , an internal synchronous rectifier and does not require a schottky diode on the LX pin. At moderate , GND EN COMP SY NC ADJ ILIM TP5 VOUT 10 L1 9 1.8V 10uH 8 7 C5 47pF R1 442k 6 EN SC192 R2 309k R8 28k C2 0.1uF C6 22uF TP6 SYNC SY NC R3 , GND EN COMP SY NC ADJ C4 470pF ILIM 10 L1 9 VOUT 10uH 8 7 C5 47pF R1
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8-R 2R2
Abstract: Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current A 2.7 7b = 25 °C Inverse diode direct current,pulsed few 7b = 25 °C 11 Inverse diode forward , diode C = f ( V DS) If = H V s d ) parameter: Vqs = OV, f = 1M H z parameter: 7¡, fp = 80 , ) parameter: lD pu|S = 4 A Rgs = 25 fí, L = 45.3 mH Drain-source breakdown voltage ^(BR)DSS = 710 , . '4 .5 sy dip iir r 'n g o^ess burr n a x . 0.05 Semiconductor Group 572 fl235bD5 OOÃ"MMl -
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sy 710 diode

Abstract: diode sy 715 Load Current Range 700mA Guaranteed Output Current No Schottky Diode Required 35µA Quiescent Current , LX 9 R1 V ou t = 0 .7 5 V to V in + C3 2 BP PGN D SY N C /PW M 10 7 R3 4 C5 C4 3 , synchronous rectifier and does not require a schottky diode on the LX pin. At moderate to heavy loads, the , J I LI M S C192 R2 30 9k C2 0. 1 uF C6 22 uF TP 6 SY N C R8 28 k TP 2 GN D R3 10 0k R4 10 0k SY N C GN D 2003 Semtech Corp. 7 www.semtech.com SC192 POWER MANAGEMENT
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MLP-10

diode sy 710

Abstract: MLPD-10 Output Current No Schottky Diode Required 35µA Quiescent Current 100% Duty Cycle in Dropout 95 , AD J + C3 R2 2 BP 10 PGN D 7 SY N C /PW M C4 Revision 6, April 07, 2004 , synchronous rectifier and does not require a schottky diode on the LX pin. At moderate to heavy loads, the , C192 R2 30 9k R8 28 k C2 0. 1 uF C6 22 uF TP 6 SY N C SY N C R3 10 0k TP 2 , Temperature Fosc (kHz) 760 755 750 Tem p = -40C 745 740 735 730 725 720 715 710 Tem p =
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C192

diode sy 710

Abstract: K685 1.54 V A W °C m fì mV mV/K 685 1.26 710 1.4 PINNING - SOT426 PIN DESCRIPTION PIN C O NF IG UR AT IO N SY M B O L 1 2 3 4 5 mb gate T1 (connected to mb) T2 source drain LIMITING , S = 0 V; Tj =175 °C 38 1.0 0.5 - 43 1.5 0.1 0.004 0.02 16 710 1.4 2.0 2.3 100 250 2 250 1 , VE RSE DIODE LIMITING VALUE S AND C H A R A C T E R IS T IC S Tj = 25 °C unless otherwise specified , Pulsed reverse drain current Diode forward voltage IF -20 A ; VG S- 0 V lF = 40 A ; VG S= 0 V -
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K685 BUK9120-48TC

mikroelektronik ddr

Abstract: Halbleiterbauelemente DDR o 705 o u 710 o u 711 0 u u 821 VK VK VQ u u u u u u u u u u u u u u u u u 107 108 109 111 , SS SSY ST X ST SU SU SY SY SY SY SY SY SY SY SY SY SY SY SY SY SY SY SY SZ X SZX X SZX SZX SZY SZY , collector cut-off current a t the em itter diode biased in the reserve direction high collector current low , Coding 52 IT r O il OZ [ 01 C DO [ 12 ]57 77 ]S2 lOUUt 'cc SY m RD Cl CZ v ~ n ZVE
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mikroelektronik ddr Halbleiterbauelemente DDR VEB mikroelektronik vqb 71 A910D diode sy-170 DDR-1026

d773

Abstract: diode sy 710 X IN G T O N , MA 02173 · T E L . (6171 861-6540 TW X (710) 326-6509 · T E L E X 95-1064 2-321 , A R A CTER ISTICS Ig Continuous Source Current (Body Diode) UFN820 UFN821 UF^822 UFN823 *SM Pulse Source Current (Body Diode) ® UFN820 UFN821 UFN822 UFN823 V$d Diode Forward V o ltage© UFN820 UFN821 , < 3 (X V $, Duty Cycle < 2 % . Fig. 1 - Typical Output Characteristics Sy|>. 3V 1 a w- V , ) 861-6540 TW X (710) 326*6509 · T E L E X 95-1064 2-322 PR IN TED IN U .S .A . UNITRODE CORP
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d773 UFN02O UFN022
Abstract: comparison is made. Reduced DV/DT on commutation - no snubber networks required No blocking diode , 34 ] N/C 33 ] N/C 32 ] R EVCLK 31 ] SY S C LK 30 ] R RAMP 29 ] V CC 28 ] SEN SE4 VM3 [ 11 , Schottky blocking diode to prevent current flow from the spinning motor to the power supply. During , feedback to the microprocessor on motor activity. 7-10 SSI 32M7011 Hal l-Sensor less Motor Speed , UNITS Fmax, S Y SC LK 1.0 2.0 4.5 MHz Twh, Twl, SY SC LK width high or low 40 -
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sy 710 diode

Abstract: IC 6757 greased F re e A ir O p e ra tio n BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS 's 'S M V) > *rr °R R , * 9 .0 * 12 15 1 .5 0 * A - M o d ifie d M O S F E T sy m b o l sh o w in g th e in tegral , ) 861-6540 TW X {710) 326-6509 T E L E X 95-1064 o - 1 .6 0 * 500 T j - 1 5 0 ° C , Ip = Ig M , ) 861-6540 TW X (710) 326*6509 · T E L E X 95-1064 2-50 P R IN T E D IN U .S A . 2N6757 JAN, JANTX , F O R B E S ROAD L E X IN G T O N , MA 02173 · T E L . (617) 861-6540 TW X (710) 326-6509 · T E L E
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2N6758 IC 6757 IL-S-19500/542A

AD712

Abstract: LT1057 , P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 Twx: 710/394-6577 , ±20 +36 ±50 mA Current Limit 'sc to Ground -33 Supply Current 'sY No Load Vo = 0V - 5.6 7.0 , Ground ±10 - ±60 ±18 - ±60 ±18 - ±60 mA Supply Current 'sY No Load V0 = OV - 5.6 7.0 - 5.6 7.0 - , Limit 'sc Output Shorted to Ground ±18 - ±60 mA Supply Current 'sY No Load Vo = 0V - 5.6 7.0 mA , Shorted to Ground ±20/±60 mAM IN/MAX Supply Current 'sY No Load v0 = ov 7.0 mA MAX Slew Rate SR Rl =
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OP-249 AD712 LT1057 OP-215 TL072 MC34082 OP-42 10OOV/

MIL-STD-83

Abstract: 9k22 *062-9106, U.S.A. Tel: 617/329-4700 Fax: 617/326-8703 Twx: 710/304-6577 Telex: 924491 Cable: ANALOG , OV. 2. The digital control inputs arc diode protected; however, permanent damage Cpay occur on , diode protected; however, permanent damage may occur on unconnected devices subject to high energy , ) LEAD HO 1 letHTTFICD SY Oar or mqtch leads ine soimr. on nN.nxreo köva* on auqy « 16-Pin Cerdip (Q
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AD7501 AD7503 AD7502 MIL-STD-83 9k22 cjj z5 AD750I 170X1 AD7501/AD7S03 AD75Q3
Abstract: internal diodes. Limit forward diode current to maximum current rating. 7-10 DG308A/DG309 caloric CORPORATION V ELECTRICAL CHARACTERISTICS3 LIM ITS SY M B O L 1 = 2 S °C 2 = 125, 8 5 , 70°C 3 = , . Limit forward diode current to maximum current ratings TEST CIRCUITS Figure 1. Switching Time with -
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