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diode smd ED 68

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST C ZRB5926 ZRB5926 - C ZRB5956 ZRB5956 Voltage: 11 - , Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST 8 RATING AND CHARACTERISTIC CURVES , dividing the ac voltage drop across the device by the accurrent applied. The specifi ed limits are for IZ , : 510-657-8671 · Fax: 510-657-8921 · www.comchiptech.com Page 1 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST ELECTRICAL CHARACTERISTICS (TL=30°C unless otherwise noted) (VF=1.5Volts Max @ IF ... Comchip Technology
Original
datasheet

3 pages,
66.3 Kb

ZRB5956 Diode zener smd 152 1368 smd smd diode ED 46 diode smd ED 84 diode smd ED 68 ZRB5926 TEXT
datasheet frame
Abstract: manufacturable in SMD EcoSmart ­ Extremely Energy Efficient · Consumes typically only 50/80 mW in self-powered , discontinuous conduction mode. 3. Continuous conduction mode. 4. Packages: P: DIP-8B, G: SMD-8B. For lead-free , reference for the BYPASS and FEEDBACK pins. P Package (DIP-8B) G Package (SMD-8B) S 1 8 2 7 , emitting smoke, fire or incandescent material). 200 100 0 68 kHz 64 kHz 0 20 Time (us , of a The power processing stage is formed by the LinkSwitch-TN, freewheeling diode D1, output ... Power Integrations
Original
datasheet

16 pages,
857.84 Kb

PI-3751-121003 lnk304 flyback transformer pin PI-2240-012301 PI-3709-111203 PI-3754-112103 LNK305P lnk306 PI-3660-081303 LinkSwitch-TN isolation Application Note LNK304 PI-3492-111903 LNK304 PI-3757-112103 LNK302/304-306 PI-3752-121003 LNK302/304-306 PI-3755-121003 LNK302/304-306 LNK304 Application Note LNK302/304-306 LNK302 LNK302/304-306 diode smd ED 68 LNK302/304-306 LNK302/304-306 LNK302/304-306 TEXT
datasheet frame
Abstract: Resistance Parameter R&jc R&jc Rees Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD , I PD -9.16 68 A International IG R Rectifier Features pr elim ina r y IR G 4 Z Q 7 0 U , RECOVERY DIODE · U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies · IGBT co-packaged w ith , ighe st po w e r de nsity and e fficie n cy ava ila ble · H EXFR ED Diodes optim ized for perform ance , conditions · High input im p ed ance requires low gate drive po w e r · Less noise and interference ... OCR Scan
datasheet

10 pages,
184.95 Kb

ttp 916 transistor smd 4.z diode smd ED 68 TEXT
datasheet frame
Abstract: Diodes SMD Type Zener Diodes BZX585 BZX585 Series Features Total Power Dissipation: Max. 300mW , ( ) 5% (C) @ IZ = 1mA @ IZ = 5mA Temp. Coeff. SZ (mV/K) @ IZ = 5mA Diode Cap , 275 6.0 C0 F0 2% 5% www.kexin.com.cn 1 Diodes SMD Type BZX585 BZX585 Series , . Temp. Coeff. SZ (mV/K) @ IZ = 5mA Typ. Diode Cap. Non-repetitive peak reverse Cd (pF) current , EC HC 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25 ED ... Kexin
Original
datasheet

2 pages,
44.65 Kb

Zener diode smd marking e4 DIODE e5 SMD smd transistor marking f7 Zener diode smd marking f6 zener diode marking E7 DIODE H5 SMD SMD F5 DIODE bzx585 zener smd diode ED smd diode marking 325 smd diode h9 smd diode E7 BZX585 diode smd ED 84 BZX585 diode smd ED 68 BZX585 SMD F6 DIODE BZX585 Diode smd f6 BZX585 DIODE F7 SMD BZX585 smd marking H6 BZX585 smd diode F6 BZX585 smd diode MARKING F6 BZX585 BZX585 BZX585 TEXT
datasheet frame
Abstract: SILIICON PLANAR ZENER DIODES 3 CZMA3V9-47V CZMA3V9-47V SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = , 2 1 Dual Zener Diodes, Common Anode ABSOLUTE MAXIMUM RATINGS per diode (Ta=25° unless , ceramic alumna * Device mounted on an FR5 printed circuit board ELECTRICAL CHARACTERISTICS per diode , CZMA 4.3 CZMA 4.7 CZMA 5.1 CZMA 5.6 CZMA 6.2 CZMA 6.8 CZMA 7.5 CZMA 8.2 CZMA 9.1 CZMA 10 , -47V SOT-23 Formed SMD Package 3 Pin Configurat ion For Lead Free Parts, Device Part # will be ... Continental Device India
Original
datasheet

4 pages,
109.9 Kb

TEXT
datasheet frame
Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES · Total power dissipation: max. 300 mW · Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter , MM3ZB33 MM3ZB33 MM3ZB36 MM3ZB36 MM3ZB39 MM3ZB39 1) 2) Marking Code Vznom V DN DP DR DX DY DZ Z0 EB EC ED EE , 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 ... Semtech Electronics
Original
datasheet

3 pages,
219.52 Kb

diode ep sod 323 ep sod323 ez 724 marking code EZ marking code SMD zener MM3ZB33 semtech zener smd smd marking EY smd marking ez Diodes smd zener diode code bp MM3Z4B7 smd diode code ED smd zener bp MM3ZB39 smd transistor marking ey MM3ZB39 marking code diode Eb SMD MM3ZB39 marking code EY SMD MM3ZB39 smd transistor marking code EY MM3ZB39 mm3z4b3 MM3ZB39 MM3ZB39 MM3ZB39 ZENER DIODES DZ 6.2 TEXT
datasheet frame
Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol , 4.99.5.21 130 5 2 1.5 -0.02.+0.02 MM3Z 5B6 ED 5.6 5 5.48.5.72 80 5 , 0.03.0.06 MM3Z 6B8 EF 6.8 5 6.66.6.94 30 5 0.5 3.5 0.03.0.07 MM3Z 7B5 ... Semtech Electronics
Original
datasheet

3 pages,
239.57 Kb

planar transistor 5B1 b16 zener 5B1 smd transistor 6B2 marking code 6b2 zener diode B15 diode smd b18 Zener diode marking 3B3 b36 smd diode marking code diode Eb SMD smd transistor 5B1 smd transistor marking ey diode zener B16 MM3ZB39 zener Diode B22 MM3ZB39 smd diode code B12 MM3ZB39 zener smd marking EA MM3ZB39 smd 5b1 MM3ZB39 B20 zener diode MM3ZB39 5B1 zener diode MM3ZB39 zener diode b27 MM3ZB39 MM3ZB39 MM3ZB39 TEXT
datasheet frame
Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES · Total power dissipation: max. 300 mW · Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter , MM3ZB33 MM3ZB33 MM3ZB36 MM3ZB36 MM3ZB39 MM3ZB39 2) DN DP DR DX DY DZ Z0 EB EC ED EE EF EH EJ EK EM EN EP , 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 lZT for ... Semtech Electronics
Original
datasheet

3 pages,
220.7 Kb

transistor marking code EY diode smd ed 68 ez 724 marking code EZ diode ep sod 323 smd diode ED 08 smd marking EY smd marking ez Diodes smd zener diode code bp smd zener bp smd diode code ED smd code marking FH MM3ZB39 marking code DN SMD MM3ZB39 smd marking code fj MM3ZB39 MARKING FD ZENER DIODE MM3ZB39 MM3ZB39 MM3ZB39 smd transistor marking code EY smd transistor marking ey marking code diode Eb SMD marking code EY SMD TEXT
datasheet frame
Abstract: MM3Z2B4~MM3ZB39 MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol , 4.99.5.21 130 5 2 1.5 -0.02.+0.02 MM3Z 5B6 ED 5.6 5 5.48.5.72 80 5 , 0.03.0.06 MM3Z 6B8 EF 6.8 5 6.66.6.94 30 5 0.5 3.5 0.03.0.07 MM3Z 7B5 ... Semtech Electronics
Original
datasheet

3 pages,
307.42 Kb

smd diode code ED marking B33 diode Zener B12 b18 Zener diode marking code diode Eb SMD diode zener B16 zener Diode B22 Zener Diode marking b27 smd 5b1 ZENER B18 smd diode code B12 zener b27 b16 zener MM3ZB39 b36 smd diode MM3ZB39 zener diode b27 MM3ZB39 smd diode b13 MM3ZB39 B20 zener diode MM3ZB39 zener diode 4B3 MM3ZB39 6b2 zener diode MM3ZB39 5B1 zener diode MM3ZB39 MM3ZB39 MM3ZB39 TEXT
datasheet frame
Abstract: mounted devices (SMD). 200 Ptot - Power Dissipation (mW) 150 Phototransistor 100 50 Diode , capacitance and high isolation voltage. This coupler has a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic SMD package. The , INFORMATION S F H 6 1 5 6 # CTR BIN # X 0 0 1 T TAPE AND REEL SMD-4 PART NUMBER PACKAGE OPTION > 8 mm AGENCY CERTIFIED/PACKAGE UL, cUL, BSI SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4, 100 mil ... Vishay Semiconductors
Original
datasheet

7 pages,
117.69 Kb

transistor ba 752 smd SFH6156 TEXT
datasheet frame

Archived Files

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No abstract text available
/download/92011529-169531ZC/igbtsip.zip ()
Infineon 07/09/2000 58.47 Kb ZIP igbtsip.zip
C Note 1 : For a surge greater than the maximum values, the diode will fail in short-circuit. IC's. January 1998 Ed: 3 Symbol Parameter Value Unit R th (j-l) Junction to leads 20 5 C/W R 9.2 68 13.4 298 5.7 4000 SMBJ6.0A-TR BUA SMBJ6.0CA-TR BBA 800 6.0 6.7 10 10.3 61 13.7 290 5.9 3850 59 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR BUM SMBJ30CA-TR SMBJ30CA-TR BBM 1 30 33.3 1 48.4 13 64.3 62 9.9 950 SMBJ33A-TR SMBJ33A-TR BUN , Type Code, Cathode Band (for unidirectional types only). FOOTPRINT DIMENSIONS (Millimeter) SMD
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5616-v3.htm
STMicroelectronics 25/01/2001 11.04 Kb HTM 5616-v3.htm
maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION devices such as MOS Technology and low voltage supplied IC's. January 1998 Ed: 3 Symbol Parameter Value A V A 10 -4 / 5 C pF SMBJ5.0A-TR BUZ SMBJ5.0CA-TR BBZ 800 5.0 6.4 10 9.2 68 13.4 298 5.7 4000 75 9.7 1075 SMBJ28A-TR SMBJ28A-TR BUL SMBJ28CA-TR SMBJ28CA-TR BBL 1 28 31.1 1 45.4 13.8 59 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR BUM DIMENSIONS (Millimeter) SMD Plastic. 1.52 2.75 2.3 1.52 Weight : 0.12 g ) SMBJxxxA-TR, CA-TR 6/6
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5616.htm
STMicroelectronics 20/10/2000 11.61 Kb HTM 5616.htm
during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in voltage supplied IC's. January 1998 Ed: 3 Symbol Parameter Value Unit R th (j-l) Junction to leads 20 5 5.0 6.4 10 9.2 68 13.4 298 5.7 4000 SMBJ6.0A-TR BUA SMBJ6.0CA-TR BBA 800 6.0 6.7 10 10.3 61 13.7 290 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR BUM SMBJ30CA-TR SMBJ30CA-TR BBM 1 30 33.3 1 48.4 13 64.3 62 9.9 950 SMBJ33A-TR SMBJ33A-TR BUN unidirectional types only). FOOTPRINT DIMENSIONS (Millimeter) SMD Plastic. 1.52 2.75 2.3 1.52 Weight : 0.12 g
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5616-v1.htm
STMicroelectronics 02/04/1999 8.75 Kb HTM 5616-v1.htm
during 10 s. 260 5 C Note 1 : For a surge greater than the maximum values, the diode will fail in voltage supplied IC's. January 1998 Ed: 3 Symbol Parameter Value Unit R th (j-l) Junction to leads 20 5 5.0 6.4 10 9.2 68 13.4 298 5.7 4000 SMBJ6.0A-TR BUA SMBJ6.0CA-TR BBA 800 6.0 6.7 10 10.3 61 13.7 290 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR BUM SMBJ30CA-TR SMBJ30CA-TR BBM 1 30 33.3 1 48.4 13 64.3 62 9.9 950 SMBJ33A-TR SMBJ33A-TR BUN unidirectional types only). FOOTPRINT DIMENSIONS (Millimeter) SMD Plastic. 1.52 2.75 2.3 1.52 Weight : 0.12 g
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5616-v2.htm
STMicroelectronics 14/06/1999 8.71 Kb HTM 5616-v2.htm
WITH HYSTERESIS n BROWNOUT PROTECTION (SMD PACKAGE ONLY) MAIN APPLICATIONS n WALL PLUG POWER limiting, latched output overvoltage protection, mains undervolt- age protection (SMD version only) and 16 V D1 BZW06-154 BZW06-154 D3 1N4148 1N4148 D4 BYW100-100 BYW100-100 IC1 C9 100 mF 16 V R1 68 W R4 1.5 k W D2 1 IC2 TL431 TL431 R3 2.43 k W R4 2.43 k W R5 2 k W 3 1 5 4 6, 7, 8 L6590 L6590 IC1 R6 6.8 k connect- ed between pin Vcc (3) and ground and makes its voltage rise linearly. As the Vcc voltage
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5751-v3.htm
STMicroelectronics 03/10/2000 29.1 Kb HTM 5751-v3.htm
BROWNOUT PROTECTION (SMD PACKAGE ONLY) MAIN APPLICATIONS n WALL PLUG POWER SUPPLIES UP TO 15 W n AC-DC cycle-by-cycle current limiting, latched output overvoltage protection, mains undervolt- age protection (SMD mF 16 V R1 68 W R4 1.5 k W D2 STTA106 STTA106 L1 4.7 mH T1 C1 22 mF 400 V C7 2.2 nF Y C6 10 nF BD1 DF06M DF06M R4 2.43 k W R5 2 k W 3 1 5 4 6, 7, 8 L6590 L6590 IC1 R6 6.8 k W L6590 L6590 12/23 Figure 28. Test Board (2 ed between pin Vcc (3) and ground and makes its voltage rise linearly. As the Vcc voltage reaches
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5751.htm
STMicroelectronics 20/10/2000 30.72 Kb HTM 5751.htm
through-hole diode and the second one is in SMD package. The sale types in italic are p-n diodes, the others inductors). At the secondary side, the catch diode is reverse- biased, thus the load is being supplied by transferred to the secondary by magnetic coupling. The catch diode is forward-biased, and the stored energy is overvoltage V cc IC supply voltage V F Secondary diode forward drop V BF Bridge Rectifier + EMI filter voltage on the secondary diode. It should be set based on experience, using numbers of similar converters as
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7310.htm
STMicroelectronics 20/10/2000 95.66 Kb HTM 7310.htm
the L6590D L6590D is housed in SO16W SO16W package for SMD assembly. Devices' pinout in both package versions is available in the SMD version L6590D L6590D. Thermal properties All of the ground pins (6, 7 and 8 in MINIDIP, 9 a zener diode. Its breakdown voltage tracks the Over- voltage protection threshold. The internal ) R1 R2 2 . 5 V R F1 AN1261 AN1261 APPLICATION NOTE 16/25 ed again. The result is an intermittent 1N4148 1N4148 D7 1N4148 1N4148 D8 BZX79C12 BZX79C12 C7 10 mF 25V C9 330 nF R5 4.7 k W 4 3 R6 0.1 W R10 6.8 k W
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7309-v1.htm
STMicroelectronics 03/10/2000 46.24 Kb HTM 7309-v1.htm