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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

diode smd ED 68

Catalog Datasheet MFG & Type PDF Document Tags

diode smd ED 68

Abstract: diode smd ED 84 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST C ZRB5926 - C ZRB5956 Voltage: 11 - , Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST 8 RATING AND CHARACTERISTIC CURVES , dividing the ac voltage drop across the device by the accurrent applied. The specifi ed limits are for IZ , : 510-657-8671 · Fax: 510-657-8921 · www.comchiptech.com Page 1 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST ELECTRICAL CHARACTERISTICS (TL=30°C unless otherwise noted) (VF=1.5Volts Max @ IF
Comchip Technology
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diode smd ED 68 diode smd ED 84 smd diode ED 46 Diode zener smd 152 1368 smd SMB/DO-214AA DO-214AA MIL-STD-750 VOLTAGE-10 DS020800

diode smd ED 68

Abstract: LNK302 manufacturable in SMD EcoSmart ­ Extremely Energy Efficient · Consumes typically only 50/80 mW in self-powered , discontinuous conduction mode. 3. Continuous conduction mode. 4. Packages: P: DIP-8B, G: SMD-8B. For lead-free , reference for the BYPASS and FEEDBACK pins. P Package (DIP-8B) G Package (SMD-8B) S 1 8 2 7 , emitting smoke, fire or incandescent material). 200 100 0 68 kHz 64 kHz 0 20 Time (µs , of a The power processing stage is formed by the LinkSwitch-TN, freewheeling diode D1, output
Power Integrations
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LNK302 LNK304 Application Note PI-3755-121003 PI-3752-121003 LNK304 PI-3757-112103 LNK302/304-306

diode smd ED 68

Abstract: transistor smd 4.z Resistance Parameter R&jc R&jc Rees Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD , I PD -9.16 68 A International IG R Rectifier Features pr elim ina r y IR G 4 Z Q 7 0 U , RECOVERY DIODE · U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies · IGBT co-packaged w ith , ighe st po w e r de nsity and e fficie n cy ava ila ble · H EXFR ED Diodes optim ized for perform ance , conditions · High input im p ed ance requires low gate drive po w e r · Less noise and interference
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OCR Scan
transistor smd 4.z ttp 916 IRG4ZC70UD SMD-10

smd diode MARKING F6

Abstract: smd diode F6 Diodes SMD Type Zener Diodes BZX585 Series Features Total Power Dissipation: Max. 300mW , ( ) 5% (C) @ IZ = 1mA @ IZ = 5mA Temp. Coeff. SZ (mV/K) @ IZ = 5mA Diode Cap , 275 6.0 C0 F0 2% 5% www.kexin.com.cn 1 Diodes SMD Type BZX585 Series , . Temp. Coeff. SZ (mV/K) @ IZ = 5mA Typ. Diode Cap. Non-repetitive peak reverse Cd (pF) current , EC HC 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25 ED
Kexin
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smd diode MARKING F6 smd diode F6 smd marking H6 DIODE F7 SMD Diode smd f6 SMD F6 DIODE
Abstract: SILIICON PLANAR ZENER DIODES 3 CZMA3V9-47V SOT-23 Formed SMD Package 3 Pin Configurat ion 1 = , 2 1 Dual Zener Diodes, Common Anode ABSOLUTE MAXIMUM RATINGS per diode (Ta=25° unless , ceramic alumna * Device mounted on an FR5 printed circuit board ELECTRICAL CHARACTERISTICS per diode , CZMA 4.3 CZMA 4.7 CZMA 5.1 CZMA 5.6 CZMA 6.2 CZMA 6.8 CZMA 7.5 CZMA 8.2 CZMA 9.1 CZMA 10 , -47V SOT-23 Formed SMD Package 3 Pin Configurat ion For Lead Free Parts, Device Part # will be Continental Device India
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C-120 010406E

ZENER DIODES DZ 6.2

Abstract: MM3ZB39 MM3Z2B4~MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES · Total power dissipation: max. 300 mW · Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter , MM3ZB33 MM3ZB36 MM3ZB39 1) 2) Marking Code Vznom V DN DP DR DX DY DZ Z0 EB EC ED EE , 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33
Semtech Electronics
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ZENER DIODES DZ 6.2 smd zener bp marking code EY SMD smd transistor marking code EY smd transistor marking ey smd diode code ED MM3ZB10 MM3ZB11 MM3ZB12 MM3ZB13 MM3ZB15 MM3ZB16

zener diode b27

Abstract: 5B1 zener diode MM3Z2B4~MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol , 4.99.5.21 130 5 2 1.5 -0.02.+0.02 MM3Z 5B6 ED 5.6 5 5.48.5.72 80 5 , 0.03.0.06 MM3Z 6B8 EF 6.8 5 6.66.6.94 30 5 0.5 3.5 0.03.0.07 MM3Z 7B5
Semtech Electronics
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zener diode b27 5B1 zener diode B20 zener diode smd 5b1 zener Diode B22 diode zener B16

marking code EY SMD

Abstract: marking code diode Eb SMD MM3Z2B4~MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES · Total power dissipation: max. 300 mW · Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25 OC) Parameter , MM3ZB33 MM3ZB36 MM3ZB39 2) DN DP DR DX DY DZ Z0 EB EC ED EE EF EH EJ EK EM EN EP , 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 lZT for
Semtech Electronics
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marking code diode Eb SMD smd marking code fj MARKING FD ZENER DIODE marking code DN SMD smd code marking FH ez 724 MM3ZB18 MM3ZB20 MM3ZB22 MM3ZB24 MM3ZB27 MM3ZB30

5B1 zener diode

Abstract: 6b2 zener diode MM3Z2B4~MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol , 4.99.5.21 130 5 2 1.5 -0.02.+0.02 MM3Z 5B6 ED 5.6 5 5.48.5.72 80 5 , 0.03.0.06 MM3Z 6B8 EF 6.8 5 6.66.6.94 30 5 0.5 3.5 0.03.0.07 MM3Z 7B5
Semtech Electronics
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6b2 zener diode zener diode 4B3 smd diode b13 b16 zener b36 smd diode zener b27

transistor ba 752 smd

Abstract: diode smd ED 68 mounted devices (SMD). 200 Ptot - Power Dissipation (mW) 150 Phototransistor 100 50 Diode , capacitance and high isolation voltage. This coupler has a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic SMD package. The , INFORMATION S F H 6 1 5 6 # CTR BIN # X 0 0 1 T TAPE AND REEL SMD-4 PART NUMBER PACKAGE OPTION > 8 mm AGENCY CERTIFIED/PACKAGE UL, cUL, BSI SMD-4, 100 mil, pitch VDE, UL, cUL, BSI SMD-4, 100 mil
Vishay Semiconductors
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transistor ba 752 smd SFH6156 2002/95/EC 2002/96/EC VDE0805 UL1577 E52744

smd 5b1

Abstract: smd transistor 5B1 MM3Z2B4~MM3ZB39 (±2%) SILICON PLANAR ZENER DIODES FEATURES Total power dissipation: max. 200 mW Small plastic package suitable for surface mounted design DESCRIPTION Silicon planar zener diode in a small plastic SMD SOD-323 package Absolute Maximum Ratings (Ta = 25oC) Symbol , 4.99.5.21 130 5 2 1.5 -0.02.+0.02 MM3Z 5B6 ED 5.6 5 5.48.5.72 80 5 , 0.03.0.06 MM3Z 6B8 EF 6.8 5 6.66.6.94 30 5 0.5 3.5 0.03.0.07 MM3Z 7B5
Semtech Electronics
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smd transistor 5B1 planar transistor 5B1 B15 diode smd DIODE B36 smd diode code B12 3b3 zener diode

Solar Charge Controller mppt ic

Abstract: mppt Charge Controller design and circuit DI P4 TDO TRST T_L ED 26 27 28 55 56 57 58 59 61 62 29 30 33 34 35 36 1 , BAT_L ED DEBUG_L ED1 DEBUG_L ED2 DEBUG_L ED3 DEBUG_L ED4 T_Battery VSL ED_F ault T_Driv er VL ED IL ED GND 100nF BAT46 BAT46 GND C61 12V 1uF C15 0.1E 0.1E 0.1E 0.1E 0.1E 0.1E Fuse1 GND 47K R11 10K Q9 2 VL ED D31 GND Charger Therm al C69 100nF D34 IL ED D33 2 Green 100nF BAT46 BAT46 GND VDD C63 2 Blue 2 Blue 2 Blue
STMicroelectronics
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Solar Charge Controller mppt ic mppt Charge Controller design and circuit solar charger schematic 12V Solar Charge Controller mppt Solar mppt schematic schematic diagram 12V solar charge controller UM0512 STEVAL-ILL022V1 STM32F101R

diode smd ED 74

Abstract: diode smd ED 84 band-switching diode in a small plastic SOD723A SMD package. Fig.1 Simplified outline (SOD723A) and symbol , DISCRETE SEMICONDUCTORS DATA SHEET M3D319 BA277-01 Band-switching diode Preliminary specification 2001 Sep 07 Philips Semiconductors Preliminary specification Band-switching diode BA277-01 PINNING FEATURES · Small plastic SMD package PIN DESCRIPTION · Continuous reverse , diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 . APPLICATIONS · Low loss
Philips Semiconductors
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diode smd ED 74 st smd diode marking code DE BA277 BP317 smd marking code diode ME SOD723A MAM405
Abstract: diode wit h DC rat ed current equal t o t he input current t o allow an adequat e m argin for safe use , wafer- level chip scale package ( WLCSP) and is rat ed over t he - 40°C t o + 85°C t em per at ure , induct or bet ween LX and input supply ( VI N) ; Schot tky rect ifi er anode is connect ed bet ween LX pin while cat hode is connect ed t o out put capacit or. Supply input for t he I C. Connect a 4.7Π, m ainly relat ed t o t he out put capacit or valued. See t he Capacit or Select ion sect ion in t Advanced Analogic Technologies
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AAT1403
Abstract: : Planar high performance band-switching diode in a small plastic SOD523V SMD package. 22 Simplified , DISCRETE SEMICONDUCTORS DAT M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES â'¢ Small plastic SMD package PIN ; â'¢ Continuous reverse voltage: max. 35 V DESCRIPTION 1 â'¢ Low diode capacitance: max. 1.2 pF â'¢ Low diode forward resistance Philips Semiconductors
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MBK258 MAM399

diode smd ED 68

Abstract: diode smd ED 74 : Planar high performance band-switching diode in a small plastic SOD523V SMD package. 22 Simplified , DISCRETE SEMICONDUCTORS DATA SHEET M3D739 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 PINNING FEATURES · Small plastic SMD package PIN ; · Continuous reverse voltage: max. 35 V DESCRIPTION 1 · Low diode capacitance: max. 1.2 pF · Low diode forward resistance: max
Philips Semiconductors
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sc793 diode smd marking ed diode ED 84 smd 816

sc08440

Abstract: smd diode L30 current (VGS = 0) VDS = 30 V, Tc = 125 °C IGSS Min. nA 1 V VGS = 10 V, ID= 13.5 A SMD version 0.015 0.014 0.020 0.019 VGS = 4.5 V, ID= 13.5 A SMD version 0.021 0.020 , (Figure 15 and Figure 20) Source drain diode Parameter Test conditions Source-drain current , impedance for TO-220 AM03897v1 ID (A) is rea s a S(on) thi RD in ion max rat pe ed by O it , for DPAK, IPAK AM03898v1 ID (A) is rea s a on) thi RDS( in ion max rat y pe ed b O
STMicroelectronics
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STD27N3LH5 STP27N3LH5 sc08440 smd diode L30 STU27 SMD mosfet MARKING code TC STU27N3LH5 27N3LH5

sc08440

Abstract: STU27 current (VGS = 0) VDS = 30 V, Tc = 125 °C IGSS Min. nA 1 V VGS = 10 V, ID= 13.5 A SMD version 0.015 0.014 0.020 0.019 VGS = 4.5 V, ID= 13.5 A SMD version 0.021 0.020 , 10 V (Figure 15 and Figure 20) Source drain diode Parameter Test conditions Source-drain , max rat pe ed by O it Lim 100 10 100µs 1ms 1 10ms Tj=175°C Tc=25°C 0.1 , pe ed b O it Lim 100 10 100µs 1ms 1 10ms Tj=175°C Tc=25°C 0.1 Sinlge
STMicroelectronics
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Part Marking TO-220 STMicroelectronics

TXS2-12V

Abstract: TXS2-24V resistance Surge withstand between open contacts: 1,500V 10×160µs (FCC part 68) Surge withstand between , nominal voltage) Release time (without diode) [Reset time]*3 (at 20°C)(at nominal voltage) Temperature , 500 V DC) 750 Vrms for 1min. 1,000 Vrms for 1min. 1,800 Vrms for 1min. 1,500V (FCC Part 68) 2 , side TX-S TYPES AND COIL DATA (at 20°C 68°F) 1) Standard PC board terminal type and , -1.5V TXS2-L2-3V TXS2-L2-4.5V TXS2-L2-6V TXS2-L2-9V TXS2-L2-12V TXS2-L2-24V Notes: 1. Speci ed v alue of
Panasonic
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TXS2-12V TXS2-24V TXS2-H-12V TXS2-H-24V TXS2-L-12V TXS2-L-24V

transistor ba 752 smd

Abstract: diode smd ed 68 2002/96/EC DESCRIPTION The SFH615A (DIP) and SFH6156 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode , a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between , , DIP-4 SFH615A-4 CTR 160 % to 320 %, DIP-4 SFH6156-1 CTR 40 % to 80 %, SMD-4 SFH6156-2 CTR 63 % to 125 %, SMD-4 SFH6156-3 CTR 100 % to 200 %, SMD-4 SFH6156-4 CTR 160 % to 320 %
Vishay Semiconductors
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SFH615A-2 SMD IC marking 632 smd optocoupler marking 1 633 smd optocoupler marking vishay sfh6156 optocoupler transistor ba 752 smd diode eb SFH615A-1
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