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diode smd ED 68

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Abstract: Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST C ZRB5926 ZRB5926 - C ZRB5956 ZRB5956 Voltage: 11 - , www.comchiptech.com Page 2 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST 8 RATING AND , dividing the ac voltage drop across the device by the accurrent applied. The specifi ed limits are for IZ , : 510-657-8671 · Fax: 510-657-8921 · www.comchiptech.com Page 1 Surface Mount Zener Diodes COMCHIP SMD DIODE SPECIALIST ELECTRICAL CHARACTERISTICS (TL=30°C unless otherwise noted) (VF=1.5Volts Max @ ... Original
datasheet

3 pages,
66.3 Kb

ZRB5956 Diode zener smd 152 diode smd ED 84 diode smd ED 68 ZRB5926 ZRB5926 abstract
datasheet frame
Abstract: manufacturable in SMD EcoSmart ­ Extremely Energy Efficient · Consumes typically only 50/80 mW in self-powered , discontinuous conduction mode. 3. Continuous conduction mode. 4. Packages: P: DIP-8B, G: SMD-8B. For lead-free , reference for the BYPASS and FEEDBACK pins. P Package (DIP-8B) G Package (SMD-8B) S 1 8 2 7 , emitting smoke, fire or incandescent material). 200 100 0 68 kHz 64 kHz 0 20 Time (µs , of a The power processing stage is formed by the LinkSwitch-TN, freewheeling diode D1, output ... Original
datasheet

16 pages,
857.84 Kb

ee series ferrite transformer buck converter AE PI-3751-121003 lnk304 flyback transformer pin isolation Application Note LNK304 PI-3904-020805 PI-3709-111203 PI-3754-112103 PI-2240-012301 LNK305P PI-3660-081303 LNK304 LNK302/304-306 LNK302/304-306 abstract
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Abstract: Resistance Parameter R&jc R&jc Rees Wt Junction-to-Case - IGBT Junction-to-Case - Diode SMD , I PD -9.16 68 A International IG R Rectifier Features pr elim ina r y IR G 4 Z Q 7 0 U , RECOVERY DIODE · U ltraFast IGBT op tim ize d fo r high sw itching frequ en cies · IGBT co-packaged w ith , ighe st po w e r de nsity and e fficie n cy ava ila ble · H EXFR ED Diodes optim ized for perform ance , conditions · High input im p ed ance requires low gate drive po w e r · Less noise and interference ... OCR Scan
datasheet

10 pages,
184.95 Kb

transistor smd 4.z datasheet abstract
datasheet frame
Abstract: 2002/96/EC 2002/96/EC DESCRIPTION The SFH615A SFH615A (DIP) and SFH6156 SFH6156 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode , a plastic DIP-4 or SMD package. The coupling devices are designed for signal transmission between , , DIP-4 SFH615A-4 SFH615A-4 CTR 160 % to 320 %, DIP-4 SFH6156-1 SFH6156-1 CTR 40 % to 80 %, SMD-4 SFH6156-2 SFH6156-2 CTR 63 % to 125 %, SMD-4 SFH6156-3 SFH6156-3 CTR 100 % to 200 %, SMD-4 SFH6156-4 SFH6156-4 CTR 160 % to 320 % ... Original
datasheet

9 pages,
129.12 Kb

SFH6156 optocoupler MARKING CODE SMD IC 633 optocoupler SFH615A-4 SFH615A-4x smd transistor 637 smd diode marking 9 ba transistor smd marking BA SMD TRANSISTOR MARKING ed smd diode eb SFH615A-2 transistor ba 752 SFH615A SFH6156 SFH615A abstract
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Abstract: band-switching diode in a small plastic SOD723A SMD package. Fig.1 Simplified outline (SOD723A) and , DISCRETE SEMICONDUCTORS DATA SHEET M3D319 M3D319 BA277-01 BA277-01 Band-switching diode Preliminary specification 2001 Sep 07 Philips Semiconductors Preliminary specification Band-switching diode BA277-01 BA277-01 PINNING FEATURES · Small plastic SMD package PIN DESCRIPTION · Continuous reverse , diode capacitance: max. 1.2 pF · Low diode forward resistance: max. 0.7 . APPLICATIONS · Low loss ... Original
datasheet

6 pages,
91.42 Kb

smd marking code diode ME st smd diode marking code DE SOD723A BP317 BA277-01 "MARKING CODE M2" diode smd ed 68 diode smd ED 84 diode smd ED 74 M3D319 M3D319 abstract
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Abstract: ) and SFH6156 SFH6156 (SMD) feature a variety of transfer ratios, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a plastic DIP-4 or SMD package. The coupling devices are , SFH615A-4 SFH615A-4 CTR 160 % to 320 %, DIP-4 SFH6156-1 SFH6156-1 CTR 40 % to 80 %, SMD-4 SFH6156-2 SFH6156-2 CTR 63 % to 125 %, SMD-4 SFH6156-3 SFH6156-3 CTR 100 % to 200 %, SMD-4 SFH6156-4 SFH6156-4 CTR 160 % to 320 %, SMD ... Original
datasheet

10 pages,
153.34 Kb

optocoupler 634 optocoupler SFH615A SFH6156 SFH6156-2 vishay sfh6156-3 SFH615A SFH615A-4 SFH615A-1 SFH615A-2 SFH615A-3 transistor ba 752 smd diode smd ED 68 SFH615A optocoupler SFH615A abstract
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Abstract: : Planar high performance band-switching diode in a small plastic SOD523V SMD package. 22 Simplified , DISCRETE SEMICONDUCTORS DATA SHEET M3D739 M3D739 BA278 BA278 Band-switching diode Preliminary specification 2001 Jan 15 Philips Semiconductors Preliminary specification Band-switching diode BA278 BA278 PINNING FEATURES · Small plastic SMD package PIN ; · Continuous reverse voltage: max. 35 V DESCRIPTION 1 · Low diode capacitance: max. 1.2 pF · Low diode forward resistance ... Original
datasheet

5 pages,
79.17 Kb

diode smd marking ed diode ED 84 BP317 BA278 diode smd ED 84 diode smd ED 74 diode smd ED 68 M3D739 M3D739 abstract
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Abstract: Diodes SMD Type Zener Diodes BZX585 BZX585 Series Features Total Power Dissipation: Max. 300mW , ( ) 5% (C) @ IZ = 1mA @ IZ = 5mA Temp. Coeff. SZ (mV/K) @ IZ = 5mA Diode Cap. , 275 6.0 C0 F0 2% 5% www.kexin.com.cn 1 Diodes SMD Type BZX585 BZX585 Series , Temp. Coeff. SZ (mV/K) @ IZ = 5mA Typ. Diode Cap. Non-repetitive peak reverse Cd (pF) current , EC HC 21.56 22.44 20.90 23.10 60 250 20 55 18.4 60 1.25 ED ... Original
datasheet

2 pages,
44.65 Kb

diode smd E7 DIODE e5 SMD smd transistor marking f7 Zener diode smd marking e4 zener diode marking E7 DIODE H5 SMD SMD F5 DIODE bzx585 zener smd diode marking 325 smd diode ED smd diode h9 smd diode E7 BZX585 BZX585 abstract
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Abstract: V VDRM, Ift = 1.6 mA, DIP-6 400 mil VO4154D-X007 VO4154D-X007 400 V VDRM, Ift = 1.6 mA, SMD-6 VO4154H VO4154H , 400 V VDRM, Ift = 2 mA, SMD-6 VO4154M VO4154M 400 V VDRM, Ift = 3 mA, DIP-6 VO4154M-X006 VO4154M-X006 400 V VDRM, Ift = 3 mA, DIP-6 400 mil VO4154M-X007 VO4154M-X007 400 V VDRM, Ift = 3 mA, SMD-6 VO4156D VO4156D 600 V , 600 V VDRM, Ift = 1.6 mA, SMD-6 VO4156H VO4156H 600 V VDRM, Ift = 2 mA, DIP-6 VO4156H-X006 VO4156H-X006 600 V VDRM, Ift = 2 mA, DIP-6 400 mil VO4156H-X007 VO4156H-X007 600 V VDRM, Ift = 2 mA, SMD-6 600 V VDRM, Ift = 3 ... Original
datasheet

8 pages,
114.04 Kb

VO4156H-X006 VO4154M VO4154H-X007 VO4154H-X006 VO4154H VO4154D-X007 VO4154D-X006 VO4154D vishay EB VO4154/VO4156 VO4154/VO4156 abstract
datasheet frame
Abstract: 1.6 mA, SMD-6 VO4254H VO4254H 400 V VDRM, Ift = 2 mA, DIP-6 VO4254H-X006 VO4254H-X006 400 V VDRM, Ift = 2 mA, DIP-6 400 mil VO4254H-X007 VO4254H-X007 400 V VDRM, Ift = 2 mA, SMD-6 VO4254M VO4254M 400 V VDRM, Ift = 3 mA , , SMD-6 VO4256D VO4256D 600 V VDRM, Ift = 1.6 mA, DIP-6 VO4256D-X006 VO4256D-X006 600 V VDRM, Ift = 1.6 mA, DIP-6 400 mil VO4256D-X007 VO4256D-X007 600 V VDRM, Ift = 1.6 mA, SMD-6 VO4256H VO4256H 600 V VDRM, Ift = 2 mA, DIP-6 VO4256H-X006 VO4256H-X006 600 V VDRM, Ift = 2 mA, DIP-6 400 mil VO4256H-X007 VO4256H-X007 600 V VDRM, Ift = 2 mA, SMD ... Original
datasheet

8 pages,
120.45 Kb

VO4254M diode smd ED 74 OPTOCOUPLER for SCR optocoupler smd 16 pin phototriac Phototriac zero voltage crossing VO4254D VO4254D-X006 VO4254D-X007 VO4254H VO4254H-X006 VO4254H-X007 diode smd ED 68 VO4254/VO4256 VO4254/VO4256 abstract
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maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION devices such as MOS Technology and low voltage supplied IC's. January 1998 Ed: 3 Symbol Parameter Value A V A 10 -4 / 5 C pF SMBJ5.0A-TR BUZ SMBJ5.0CA-TR BBZ 800 5.0 6.4 10 9.2 68 13.4 298 5.7 4000 75 9.7 1075 SMBJ28A-TR SMBJ28A-TR SMBJ28A-TR SMBJ28A-TR BUL SMBJ28CA-TR SMBJ28CA-TR SMBJ28CA-TR SMBJ28CA-TR BBL 1 28 31.1 1 45.4 13.8 59 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR BUM (Millimeter) SMD Plastic. 1.52 2.75 2.3 1.52 Weight : 0.12 g ) SMBJxxxA-TR, CA-TR 6/6
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5616-v1.htm
STMicroelectronics 02/04/1999 8.75 Kb HTM 5616-v1.htm
: For a surge greater than the maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM IC's. January 1998 Ed: 3 Symbol Parameter Value Unit R th (j-l) Junction to leads 20 5 C/W R 9.2 68 13.4 298 5.7 4000 SMBJ6.0A-TR BUA SMBJ6.0CA-TR BBA 800 6.0 6.7 10 10.3 61 13.7 290 5.9 3850 59 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR BUM SMBJ30CA-TR SMBJ30CA-TR SMBJ30CA-TR SMBJ30CA-TR BBM 1 30 33.3 1 48.4 13 64.3 62 9.9 950 SMBJ33A-TR SMBJ33A-TR SMBJ33A-TR SMBJ33A-TR BUN , Type Code, Cathode Band (for unidirectional types only). FOOTPRINT DIMENSIONS (Millimeter) SMD
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5616.htm
STMicroelectronics 20/10/2000 11.61 Kb HTM 5616.htm
maximum values, the diode will fail in short-circuit. ABSOLUTE MAXIMUM RATINGS (T amb = 255C) DESCRIPTION devices such as MOS Technology and low voltage supplied IC's. January 1998 Ed: 3 Symbol Parameter Value A V A 10 -4 / 5 C pF SMBJ5.0A-TR BUZ SMBJ5.0CA-TR BBZ 800 5.0 6.4 10 9.2 68 13.4 298 5.7 4000 75 9.7 1075 SMBJ28A-TR SMBJ28A-TR SMBJ28A-TR SMBJ28A-TR BUL SMBJ28CA-TR SMBJ28CA-TR SMBJ28CA-TR SMBJ28CA-TR BBL 1 28 31.1 1 45.4 13.8 59 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR BUM (Millimeter) SMD Plastic. 1.52 2.75 2.3 1.52 Weight : 0.12 g ) SMBJxxxA-TR, CA-TR 6/6
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5616-v2.htm
STMicroelectronics 14/06/1999 8.71 Kb HTM 5616-v2.htm
5 C Note 1 : For a surge greater than the maximum values, the diode will fail in Technology and low voltage supplied IC's. January 1998 Ed: 3 Symbol Parameter Value Unit R th SMBJ5.0CA-TR BBZ 800 5.0 6.4 10 9.2 68 13.4 298 5.7 4000 SMBJ6.0A-TR BUA SMBJ6.0CA-TR BBA 800 6.0 6.7 10 10.3 SMBJ28CA-TR SMBJ28CA-TR SMBJ28CA-TR SMBJ28CA-TR BBL 1 28 31.1 1 45.4 13.8 59 68 9.8 1000 SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR SMBJ30A-TR BUM SMBJ30CA-TR SMBJ30CA-TR SMBJ30CA-TR SMBJ30CA-TR BBM 1 30 33.3 1 48.4 13 64.3 , Cathode Band (for unidirectional types only). FOOTPRINT DIMENSIONS (Millimeter) SMD Plastic. 1.52
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5616-v3.htm
STMicroelectronics 25/01/2001 11.04 Kb HTM 5616-v3.htm
HYSTERESIS n BROWNOUT PROTECTION (SMD PACKAGE ONLY) MAIN APPLICATIONS n WALL PLUG POWER SUPPLIES UP TO limiting, latched output overvoltage protection, mains undervolt- age protection (SMD version only) and 16 V D1 BZW06-154 BZW06-154 BZW06-154 BZW06-154 D3 1N4148 1N4148 1N4148 1N4148 D4 BYW100-100 BYW100-100 BYW100-100 BYW100-100 IC1 C9 100 mF 16 V R1 68 W R4 1.5 k W D2 1 IC2 TL431 TL431 TL431 TL431 R3 2.43 k W R4 2.43 k W R5 2 k W 3 1 5 4 6, 7, 8 L6590 L6590 L6590 L6590 IC1 R6 6.8 k connect- ed between pin Vcc (3) and ground and makes its voltage rise linearly. As the Vcc voltage
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5751.htm
STMicroelectronics 20/10/2000 30.72 Kb HTM 5751.htm
DISSIPATIVE BUILT-IN START-UP CIRCUIT n THERMAL SHUTDOWN WITH HYSTERESIS n BROWNOUT PROTECTION (SMD cycle-by-cycle current limiting, latched output overvoltage protection, mains undervolt- age protection (SMD BYW100-100 BYW100-100 BYW100-100 BYW100-100 IC1 C9 100 mF 16 V R1 68 W R4 1.5 k W D2 STTA106 STTA106 STTA106 STTA106 L1 4.7 mH T1 C1 22 W 3 1 5 4 6, 7, 8 L6590 L6590 L6590 L6590 IC1 R6 6.8 k W L6590 L6590 L6590 L6590 12/23 Figure 28. Test Board the transformer and the drain pin. Most of this current charges the bypass capacitor connect- ed
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/5751-v3.htm
STMicroelectronics 03/10/2000 29.1 Kb HTM 5751-v3.htm
of the flyback transformer (actually, two coupled inductors). At the secondary side, the catch diode catch diode is forward-biased, and the stored energy is delivered to the output capacitor and the load. Leakage inductance overvoltage V cc IC supply voltage V F Secondary diode forward drop V BF the secondary diode. It should be set based on experience, using numbers of similar converters as a least 50V is recommended to take the forward recovery of the diode of the clamp circuit and param- eter
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7310.htm
STMicroelectronics 20/10/2000 95.66 Kb HTM 7310.htm
, while the L6590D L6590D L6590D L6590D is housed in SO16W SO16W SO16W SO16W package for SMD assembly. Devices' pinout in both package versions the error amplifier and brownout protection are available in the SMD version L6590D L6590D L6590D L6590D. Thermal values by a zener diode. Its breakdown voltage tracks the Over- voltage protection threshold. The 5 V R F1 AN1261 AN1261 AN1261 AN1261 APPLICATION NOTE 16/25 ed again. The result is an intermittent mF 25V C9 330 nF R5 4.7 k W 4 3 R6 0.1 W R10 6.8 k W R7 620 W R11 11.8 k
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/7309-v1.htm
STMicroelectronics 03/10/2000 46.24 Kb HTM 7309-v1.htm
through-hole assembly, while the L6590D L6590D L6590D L6590D is housed in SO16W SO16W SO16W SO16W package for SMD assembly. Devices' pinout in both available in the SMD version L6590D L6590D L6590D L6590D. Thermal properties All of the ground pins (6, 7 and 8 in MINIDIP, 9 a zener diode. Its breakdown voltage tracks the Over- voltage protection threshold. The internal ) R1 R2 2 . 5 V R F1 AN1261 AN1261 AN1261 AN1261 APPLICATION NOTE 16/25 ed again. The result is an intermittent 1N4148 1N4148 1N4148 1N4148 D7 1N4148 1N4148 1N4148 1N4148 D8 BZX79C12 BZX79C12 BZX79C12 BZX79C12 C7 10 mF 25V C9 330 nF R5 4.7 k W 4 3 R6 0.1 W R10 6.8 k W
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STMicroelectronics 20/10/2000 48.06 Kb HTM 7309.htm
ROM Window (corresponding to the offset in the 64-byte block in program memory) has to be load- ed
www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4563-v3.htm
STMicroelectronics 02/02/2001 188.6 Kb HTM 4563-v3.htm