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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

diode p600m

Catalog Datasheet MFG & Type PDF Document Tags

p600m DIODE

Abstract: diode P600A P600A ­ P600M WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features ! Diffused , Output Current (Note 1) @TA = 60°C P600D P600G P600J P600K P600M Unit 50 100 , reverse voltage of 4.0V D.C. P600A ­ P600M 1 of 4 © 2006 Won-Top Electronics 100 8 IF , Forward Surge Current 100 Fig. 4 Typical Junction Capacitance P600A ­ P600M 2 of 4 © 2006 , : plastic or metal. 2. Components are packed in accordance with EIA standard RS-296-E. P600A ­ P600M
Won-Top Electronics
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P600B p600m DIODE diode P600A diode P600M DC P-600 MIL-STD-202 P600J-T3 800/T P600K-T3
Abstract: P600A â'" P600M WTE POWER SEMICONDUCTORS Pb 6.0A STANDARD DIODE Features #21; Diffused , P600J P600K P600M Unit 50 100 200 400 600 800 1000 V VR(RMS) RMS , . Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. P600A â'" P600M 1 of 4 © 2006 , Junction Capacitance P600A â'" P600M 2 of 4 © 2006 Won-Top Electronics MARKING INFORMATION , packed in accordance with EIA standard RS-296-E. P600A â'" P600M 3 of 4 © 2006 Won-Top Won-Top Electronics
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P600M-T3 P600A-T3-LF

diode P600D

Abstract: P600D P600A, P600B, P600D, P600G, P600J, P600K, P600M www.vishay.com Vishay General Semiconductor , Package P600 Diode variations Single die Terminals: Matte tin plated leads, solderable J-STD , P600B P600D P600G P600J P600K P600M UNIT Max. repetitive peak reverse voltage , 100 A TA = 25 °C TA =100 °C IR P600A P600B P600D P600G P600J P600K P600M UNIT , , P600M www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 °C unless
Vishay General Semiconductor
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diode P600D 22-B106 J-STD-002 22-B102 2011/65/EU 2002/95/EC JS709A

diode IN4000

Abstract: in4000 GOLDENTECH DISCRETE SHh ESE D MOHbSTñ DQQQOQñ GOIDEHTECH DIKRETE ÃEmiCOflDUCTOR 1.0 AMPERES 3.0 DIODE 6.0 RECTIFIER s E R I E IN4000/IN5400/ P600 0041/D027/P600 Q IN4000 IN5400 P600 Dñwwiofis in inches MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 2S*C ambient temperature unless otherwise specified; resistive or Inductive toad at 60Hz. FOr capacltlv* load, derate current by , 1N5408 1N5408 P600A P600B peooo peooo P600J P600K P600M UNITS â'¢ Maximum RtoM PMk Rawtaa Voltage
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OCR Scan
1NS400 diode IN4000 1n4000 DIODE P600 diode 1N4004 or 1N5404 IN4000 diode 1N4001 1N4002 1N4003 1N4004 1N4005 1N4006

AL1510

Abstract: FL4010 1. Q U IC K R E F E R E N C E TABLE FOR R EC TIFIE R DIO D E 1-1 1 AMPERE TO 6 AMPERES GENERAL PURPOSE AXIAL LEAD SILICON RECTIFIER PIV(V) TYPE IN4001 I 1N4007 IN4001S I IN4007S IN5391 I IN5399 PS 150 1.5 PS 1510 PS200 I PS2010 IN5400 I IN5408 P600A i P600M 6.0 P600A P600D P600D P600G P600J P600K P600M , TRR PACKAGE PAGE 1 .5 W -5 .0 W SURFACE MOUNT ZENER DIODE WATTS 1.5 2.0 5.0 DEVICE TYPE B5921 ' , AXIAL LEAD ZENER DIODE WATTS 1.0 1.5 2.0 5.0 5.0 DEVICE TYPE Z 1 0 0 -Z 3 0 0 BZY97-C7V5 BZY97-C200 VZ
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OCR Scan
FL4010 AL1510 ag204 IN5822 diode ag208 IN4007 bridge rectifier ic IN5401 IN5402 IN5403 IN5404 IN5405 IN5406

6A10 DIODE

Abstract: 6A4 DIODE Axial Diode Series DIODE RECTIFIERS (GENERAL PURPOSE) Maximum Peak TYPE Reverse Maximum Maximum Average Rectified Maximum Forward Peak Reverse Current at Half-wave Resistive Surge Current Current at load 50HZ Voltage 50HZ PRV and Maximum Forward Voltage at TA=25°C Package Superimposed TA=25°C PRV Io at TA IFSM IR IFM VFM V A °C A µA , R-6 P600K 800 6.0 75 400 10 6.0 0.95 R-6 P600M 1000 6.0 75
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6A10 DIODE 6A4 DIODE diode rl207 diode RL205 diode 6a6 diode 6a4 DO-41 1N5391 DO-15 1N5392 1N5393 1N5394

diode a15a

Abstract: diode A14A | Standard Recovery Diodes | Thyristors | Transient Voltage | Suppressors | Triacs DIODE RECTIFIER , / P60OG 6A6/ P600J 6A8/ P600K 6AlO/ P600M 50 100 200 400 600 800 1000 6.0 6.0 6.0 6.0 , G3 DIODE RECTIFIER S (FAST RECOVERY) A i.SA - VA FR101 FR102 FR103 FR104 FR105 FR106 , /elite/diodes.htm (3 of 6)1/2/2005 6:38:08 PM Elite Semiconductor Products | Diodes DIODE
Elite Semiconductor Products
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diode a15a diode A14A 6A4 rectifier diode A14F diode 6AO5 6A8 RECTIFIER DIODE 1N5395 1N5396 1N5397 1N5398 1N5399 BR10W

PV-Module

Abstract: PV-Module Table of Contents Concentrators, Bypass Diode , direct mounting on the ceramic substrate. page 2 PV-Module : Concentrators, Bypass Diode Bypass Diode Product Name Status Description Features Package MURS360 NEW SMD Ultrafast , PV-Module : Crystalline, Junction Box Bypass Diode Product Name Status Description Features , -220AB PowerPack page 4 PV-Module : Crystalline, Module Integration Bypass Diode Product Name Status
Vishay Intertechnology
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PV-Module SS15P3S V15P45S GP30M DO-201AD

diode a15a

Abstract: diode 6a6 . DIODE RECTIFIER (General Purpose) / 1A * 1.5A * 2A * 3A * 6A http://elitesemi.com/templates/elite , 6AlO/ P600M 50 100 200 400 600 800 1000 6.0 6.0 6.0 6.0 6.0 6.0 6.0 60 60 60
Elite Semiconductor Products
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DO-203AB 70HF120 85hf120 1N4004 bridge rectifier 25F60 25F80 A14P 1N1183A 1N1184A 1N1185A 1N1186A 1N1187A 1N1188A

6AO5

Abstract: diode A14A . DIODE RECTIFIER (General Purpose) / 1A * 1.5A * 2A * 3A * 6A http://elitesemi.com/templates/elite , / P600J 6A8/ P600K 6AlO/ P600M 50 100 200 400 600 800 1000 6.0 6.0 6.0 6.0 6.0 6.0
Elite Semiconductor Products
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73HF40 6F40 diode al5N A14F DO-203AB Package Diode 40HF120 1N1189 1N1189A 1N1190A 1N2128A 1N2129A 1N2130A 1N2131A

L4981 PFC

Abstract: L4981 120kQ 1/2W 5% R16 30k£2 1/4W 5% R17 1 8k£i 4W 1% R21 5.1k£! 1/4W 1% BRIDGE = 4x P600M C1 , /4W 5% R17 1 8kil 4W 1% R21 5.1kiî 1/4W 1% R22 1.1MÌÌ 1/4W 1% BRIDGE = 4x P600M C1 470nF , dissipative start-up circuit, a diode (D2) to speed-up the MOS start-off time and (even if a single resistor
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OCR Scan
L4981A L4981B L4981 L4981X L4981XD DIP20 L4981 PFC 3kw pfc l49818 larcet power supply L4981A-

PFC 3kw

Abstract: L4981A 1N4148 18V BYT11-600 STH/STW15NA50 R17 R21 1.8k 4W 5.1k 1/4W BRIDGE = 4 x P600M 1% 1 , 4 x P600M 5% 5% 5% 1% 1% 1% 5% 5% 1% 5% 5% 1% 1% 1% T= primary: 88 turns of 12 x , board has been designed using: a faster not dissipative start-up circuit, a diode (D2) to speed-up the
STMicroelectronics
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PFC 3kw L4981A APPLICATION NOTES SO20

diode byt 11600

Abstract: diode P600M DC 1% FUSE = 4A/250V BRIDGE = 4 x P600M T= primary: 88 turns of 12 x 32 AWG (0.2mm) secondary , 1.8k 4W 1% 5.1k 1/4W 1% R13 R22 1.1M 1/4W BRIDGE = 4 x P600M D5 1/2W , dissipative start-up circuit, a diode (D2) to speed-up the MOS start-off time and (even if a single resistor
STMicroelectronics
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diode byt 11600 B1ET3411A STTA5 C12 IC GATE 5L NTC 1.8K 100uF 400V capacitor
Abstract: VRMS isolation voltage â'¢ VCEO up to 70 V 4 Features â'¢ #7; Ultrafast diode with high , RECTIFIERS diodes mosfets VSB2045Y/VFT3045BP/ P600M SMP TVS SiR846ADP 400 W SMP TranSzorb Vishay Intertechnology
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AEC-Q200 ITO220 VMN-MS6761-1212
Abstract: isolation voltage â'¢ VCEO up to 70 V Features â'¢ Ultrafast diode with high softness for reduced EMI , = 10 mA, Ic = 2 mA RECTIFIERS DIODES MOSFETs VSB2045Y/VFT3045BP/ P600M SMP TVS Vishay Intertechnology
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VMN-MS6792-1304-AESO

L4981A

Abstract: larcet % R21 5.1k 1/4W 1% FUSE = 4A/250V BRIDGE = 4 x P600M T= primary: 88 turns of 12 x 32 , P600M T= primary: 88 turns of 12 x 32 AWG (0.2mm) secondary: 9 turns of # 27AWG (0.15mm) core , using: a faster not dissipative start-up circuit, a diode (D2) to speed-up the MOS start-off time and
STMicroelectronics
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larcet 501 200w

PFC 3kw

Abstract: L4981A BRIDGE = 4 x P600M T= primary: 88 turns of 12 x 32 AWG (0.2mm) secondary: 9 turns of # 27AWG (0.15mm , % 5.1k 1/4W 1% R13 R22 1.1M 1/4W BRIDGE = 4 x P600M D5 1/2W BYT11-600 MOS , : The evaluation board has been designed using: a faster not dissipative start-up circuit, a diode (D2
STMicroelectronics
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12v to Amplifier 200w circuit diagrams Zener 5.1V 200w power amplifier circuit diagram 3KW GENERATOR Datasheet L4981 STTA506D

L4981A APPLICATION NOTES

Abstract: L4981B 1/4W 1% R21 STH15NA50 FUSE = 4A/250V BRIDGE = 4 x P600M T= primary: 88 turns of 12 x , % D4 18V D5 25V BYT11-600 MOS 1/2W STH15NA50 FUSE = 4A/250V BRIDGE = 4 x P600M , dissipative start-up circuit, a diode (D2) to speed-up the MOS start-off time and (even if a single resistor
STMicroelectronics
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774kHz

diode P600M DC

Abstract: B1ET3411A BRIDGE = 4 x P600M T= primary: 88 turns of 12 x 32 AWG (0.2mm) secondary: 9 turns of # 27AWG (0.15mm , % 5.1k 1/4W 1% R13 R22 1.1M 1/4W BRIDGE = 4 x P600M D5 1/2W BYT11-600 MOS , : The evaluation board has been designed using: a faster not dissipative start-up circuit, a diode (D2
STMicroelectronics
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200w power amplifier PCB layout core i3 diode p600m PFC controller dip-20

Modules A

Abstract: Information 87 Diode Rated Current 1N4007 or equivalent 1A 1N5408 or equivalent 3A P600M or , .6-9 Diode Modules & Component Carriers .10-14 Wire to RJ45 , terminal blocks. Altechâ'™s electronic modules include Diode, Fuse, Varistor, Optocoupler (I/O), Relay , DIODE MODULES & COMPONENT CARRIERS Compact and reliable transitions between high density connectors and high quality screw-cage clamp terminal blocks. Use our Diode Modules to build lamp test
Altech
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Modules A 410-112013-5M UL508 TS35/
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