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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode marking 74

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) Marking of conformity Approval mark Certification scheme CCA Protection class II DIODE S 100 V Voltage www.leister.com V~ 100 Leister Process Technologies Phone: +41 41 662 74 74 , PLASTIC WELDING, PROCESS HEAT, LASERSYSTEMS, MICROSYSTEMS Plastic Welding > Hand tools > DIODE S DIODE S Handy and powerful hot air welding tool with steplessly adjustable welding temperature and , mobile assembling applications when connected to the MINOR blower SPECIFICATIONS DIODE S 42 V Leister Process Technologies
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CSG3001-18A04

Abstract: thyristor BBC (5.12 kN) Code: 3AFE 5716 8480 Type marking S6475R F (kN) 5 d * h(mm) 45 * 20 3AFE 1000 , Plessey ABB Väst Type marking S6476R FG600AL-26-5620 WG6013/ZA DGT304SE13X2 YSG700 * F (kN) 7 , Westcode ABB Väst ABB Semic. Type marking S6425R S6723R FG1000AL-26-8830 WG9013A3A YSG1000 , SLZF 117 (11.25 kN) Code 3AFE 5741 9709 Type marking S6426R S6594R FG1000AL-26-1430 WG14013 F (kN) 20 14 14 17 d * h (mm) 93 * 26 75 * 26 56 * 18 74 * 26 Note: In the inverters
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CSG3001-18A04 thyristor BBC thyristor aeg BBC DSDI 35 WG15013B8C WG9017 540F575 870F575 630F660 1000F660 1370F690 400F415

7N65G

Abstract: 7N65L VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.4 A, dIF / dt = 100A , Tube Tube Tube Tube Tape Reel 1 of 9 QW-R502-104.I 7N65  Power MOSFET MARKING , CO., LTD www.unisonic.com.tw MARKING 2 of 9 QW-R502-104.I 7N65  Power MOSFET , Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A
Unisonic Technologies
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7N65G 7N65L 7N65L-TA3-T 7N65G-TA3-T 7N65L-TF3-T 7N65G-TF3-T 7N65L-TF1-T 7N65G-TF1-T
Abstract: RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum Continuous Drain-Source , 1 of 7 QW-R502-776.D 7N60K  Power MOSFET MARKING INFORMATION PACKAGE TO-220 TO , MARKING 2 of 7 QW-R502-776.D 7N60K  Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 , Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain , (Note 2) EAR 14.2 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220/TO-263 142 TO Unisonic Technologies
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7N60KL-TA3-T 7N60KG-TA3-T 7N60KG-TF3-T 7N60KL-TF1-T 7N60KG-TF1-T 7N60KL-TF2-T
Abstract: =520V, ID=7.4A Gate-Source Charge QGS VGS=10 V (Note 1, 2) Gate-Drain Charge QGD DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A Maximum , -770. D 7N65K  Power MOSFET MARKING INFORMATION PACKAGE MARKING TO-220 TO-220F TO , (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.2 mJ Peak Diode Recovery dv Unisonic Technologies
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7N65KL-TA3-T 7N65KG-TA3-T 7N65KL-TF3-T 7N65KG-TF3-T 7N65KL-TF1-T 7N65KG-TF1-T
Abstract: ) Gate-Drain Charge QGD 23 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 7.4 A 1.4 V Maximum Continuous Drain-Source Diode IS 7.4 A , -220F (3) L: Lead Free, G: Halogen Free MARKING INFORMATION PACKAGE MARKING TO-220 TO-220F TO , Avalanche Current (Note 2) IAR 7.4 A 7.4 A Continuous ID Drain Current Pulsed (Note 2) IDM 29.6 , Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns 142 TO-220 PD W Power Dissipation TO-220F/TO Unisonic Technologies
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7N65-M 7N65L-TF2-T 7N65G-TF2-T QW-R502-A28

diode marking 74

Abstract: BAV74 Silicon Switching Diode Array q For high-speed switching q BAV 74 Common cathode Type Marking Ordering Code (tape and reel) BAV 74 JAs Q62702-A693 Pin Configuration Package1) SOT-23 Maximum Ratings per Diode Parameter Symbol Values Unit Reverse voltage , epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BAV 74 Electrical Characteristics per Diode at TA = 25 °C, unless otherwise specified. Parameter Symbol Values Unit
Siemens
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diode marking 74 BAV74 DIODE BAV JS v

BAR74

Abstract: tr bar BAR 74 Silicon Switching Diode 3 · For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking BAR 74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 , 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 1 Oct-05-1999 BAR 74 , Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 20 MHz
Infineon Technologies
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BAR74 tr bar EHN00015 EHB00011 EHB00012 EHB00013 EHB00014 EHB00015

marking CODE n3 6PIN

Abstract: MOSFET TRANSISTOR SMD MARKING CODE nh ) PNP Use 20 Marking Indication Zener diode and resistance built-in Transistor , ordering for products which are listed at the small signal transistor and diode data book, specify the type , classification TRBS08D Resistance built-in transistor,Diode,BS08Dblank No. Standard No. 12 12 , TRBS08E Resistance built-in transistor,Diode,BS08Eblank Direction of electrode in the reel. No , G:Ze1ATR (F)No. 12SC-59Micro type Standard No. Zener diode and resistance built-in transistor 1A
Isahaya Electronics
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marking CODE n3 6PIN MOSFET TRANSISTOR SMD MARKING CODE nh INK0001AC RT8H 2SA798 equivalent 2SC2259 2SA1235 SC-70 SC-59 SC-62SOT-89 SC-75A SC-90
Abstract: SuperFET® II MOSFET 600 V, 7.4 A, 600 m Features · 650 V @TJ = 150°C · Max. RDS(on) = 600 m · Ultra Low Gate Charge (Typ. Qg = 20 nC) · Low Effective Output Capacitance (Typ. Coss.eff = 74 pF) · 100 , Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , ) (Note 3) (f > 1 Hz) 7.4 4.7 22.2 135 1.5 0.89 20 100 28 0.22 FCP600N60Z FCPF600N60Z 600 ±20 ±30 7.4* 4.7 , www.fairchildsemi.com FCP600N60Z / FCPF600N60Z N-Channel MOSFET Package Marking and Ordering Information Device Fairchild Semiconductor
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USFZ4.3V~36V

Abstract: H 48 zener diode .3V~36V ZENER DIODE SILICON EPITAXIAL PLANAR DIODE B A G H C 1 CATHODE MARK E D C MAXIMUM , + _ 0.1 0.6 + 2. CATHODE USF Marking Type Name Lot No. CATHODE MARK. Type No. USFZ4.3V USFZ4.7V USFZ5.1V USFZ5.6V USFZ6.2V USFZ6.8V Marking 43 47 51 56 62 68 Type No. USFZ7.5V USFZ8.2V USFZ9.1V USFZ10V USFZ11V USFZ12V Marking 75 82 91 10 11 12 Type No. USFZ13V USFZ15V USFZ16V USFZ18V USFZ20V USFZ22V Marking 13 15 16 18 20 22 Type No. USFZ24V USFZ27V USFZ30V USFZ33V
KEC
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USFZ4.3V~36V H 48 zener diode 3.6v zener diode USFZ5.1V MARKING 75 usfz USFZ36V

s2mc

Abstract: SiF912EDZ Temperature Source-Drain Diode Forward Voltage VGS = 4.5 V ID = 7.4 A 1.2 1.0 0.8 0.6 -50 , 5 S2 4 G2 2.6 kW G1 G1 G2 Marking Code MCXYZ Ordering Information , _C)a TA = 25_C TA = 85_C Pulsed Drain Current (VGS = 8 V) 10.7 7.4 7.7 5.3 IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa ID TA = 85 , VDS = 5 V, VGS = 4.5 V 40 A VGS = 4.5 V, ID =7.4 A Drain-Source On State Drain Source
Vishay Siliconix
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s2mc SiF912EDZ F912EDZ F912EDZ-T1--E3 S-50131--R
Abstract: Forward Current - - 74 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 296 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 74 A - - , FDB120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ Features Description â'¢ RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild , Current IDM Drain Current EAS Peak Diode Recovery dv/dt A 52 (Note 1) 296 A Fairchild Semiconductor
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diode marking 74

Abstract: BAV74 BAV 74 Silicon Switching Diode Array 3 · For high-speed switching applications · Common cathode 2 1 VPS05161 3 1 2 EHA07004 Type Marking BAV 74 JAs Pin , Diode reverse voltage VR 50 Peak reverse voltage VRM 50 Forward current IF 200 , 1 Oct-11-1999 BAV 74 Electrical Characteristics at TA = 25°C, unless otherwise specified , µA VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR =
Infineon Technologies
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EHN00019 EHB00069 EHB00070 EHB00071 EHB00072 EHB00073

zener diode 1N52

Abstract: zener voltage for diode 1N5231B 1N52 SERIES 500mW Zener Diode .022(0.56) .018(0.46) 1.024(26.0) 0.984(25.0) .177(4.5) Max , 1N52 SERIES 500mW Zener Diode 500 mWatt Zener Diodes / DO-35 DO 35 Max. Reverse Leakage Current IR @ , Marking Code VZ @ IZT 1N5221B 1N5222B 1N5223B 1N5224B 1N5225B 1N5226B 1N5227B 1N5228B 1N5229B 1N5230B , 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 74 7.4 7.0 6.6 6.2 5.6 5.2 50 5.0 4.6 4.5 4.2 3.8 , 49.0 58.0 70.0 mA 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 20 9.5 9.0 8.5 7.8 74
ERIS Technology
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zener diode 1N52 zener voltage for diode 1N5231B 1N5231B 1N5232B 1N5233B 1N5234B 1N5235B 1N5236B

FCD600N60Z

Abstract: FCD600N60Z N-Channel MOSFET March 2013 FCD600N60Z N-Channel SuperFET® II MOSFET 600 V, 7.4 , nC) · Low Effective Output Capacitance (Typ. Coss.eff = 74 pF) · 100% Avalanche Tested · ESD Improved , Repetitive Avalanche Energy Peak Diode Recovery dv/dt MOSFET dv/dt Power Dissipation (TC = 25oC) - Derate , ) (Note 1) (Note 3) (f > 1 Hz) FCD600N60Z 600 ±20 ±30 7.4 4.7 22.2 135 1.5 0.89 20 100 89 0.71 -55 to +150 , www.fairchildsemi.com FCD600N60Z N-Channel MOSFET Package Marking and Ordering Information Device Marking
Fairchild Semiconductor
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Abstract: Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 74 , Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 74 A - - 1.3 V trr Reverse , FDP120N10 N-Channel PowerTrench® MOSFET 100 V, 74 A, 12 mΩ Features Description â'¢ RDS(on) = 9.7 mΩ (Typ.) @ VGS = 10 V, ID = 74 A This N-Channel MOSFET is produced using Fairchild , Current IDM Drain Current EAS Peak Diode Recovery dv/dt A 52 (Note 1) 296 A Fairchild Semiconductor
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zener diode cross reference

Abstract: Zener Diode marking 3a the serviceability of the diode may be impaired. NOTES: 1) These ratings are based on a maximum , information only. Rev. H4 Product Folder - Fairchild P/N 1N748A - 3.9V, 0.5W Zener Diode SEARCH , Products groups 3.9V, 0.5W Zener Diode Analog and Mixed Request samples Signal Datasheet Dotted line , Cross-reference search Product Product status Pricing* Package type Leads Package marking Packing method technical , Production $0.04 DO-35 2 1N748ATR Full Production $0.04 DO-35 2 $Y 1N 74 8A $Y 1N 74 8A STD CATHODE BAN
Fairchild Semiconductor
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1N749A zener diode cross reference Zener Diode marking 3a zener diode cross reference 3.9 12v zener diode JEDEC 1N 12V 6A Zener Diode HOW TO FIND ZENER CURRENT 1N746A 1N759A 1N747A 1N750A 1N751A
Abstract: BAL 74 Silicon Switching Diode 3 For high-speed switching applications #1; 2 1 3 VPS05161 2 EHA00001 Type Marking BAL 74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 , -02-2001 BAL 74 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol , VR = 50 V Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V Infineon Technologies
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EHN00013 EHB00001 EHB00002 EHB00003 EHB00004 EHB00005

diode marking 74

Abstract: BAL74 BAL 74 Silicon Switching Diode 3 · For high-speed switching applications 2 1 3 VPS05161 2 EHA00001 Type Marking BAL 74 JCs Pin Configuration 1 = n.c. 2=A Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 , 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu 1 Oct-04-1999 BAL 74 , Reverse current VR = 50 V, TA = 150 °C AC characteristics Diode capacitance VR = 0 V, f = 20 MHz
Infineon Technologies
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BAL74
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