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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC1611J/883B Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode in40

Catalog Datasheet MFG & Type PDF Document Tags

diode in40

Abstract: "3 way splitter", circuit diagram . An external protection circuit using an inexpensive anti-parallel diode pair can be used to protect , out1 to in_+25° out2 to in_+25° out3 to in_+25° out1 to in_-40° out2 to in_-40° out3 to in_-40° out1 to
M/A-COM
Original

diode in40

Abstract: LB1275 (6-unit DIP-14). · Protector diodes against negative input (V IN=­40 to +20V). · Spark killer , =10%, pulse width , low-level voltage output pin current=100µA ­35 to +1 Load inductance LL with protector diode , V IOUT Forward voltage at spark killer diode typ 1.4 Output current Ileak(s
SANYO Electric
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LB1275 LB1274 diode in40 Array Of Independent Diodes, Dip16 Current-100uA ENN790C 3006C-DIP16 DIP-16 DIP16

diode in40

Abstract: K2P0037-27-33 K2P0037-27-33 OKI electronic components OCS30 Optical PNPN Switches GENERAL DESCRIPTION The OCS30 is an optical sw itch form ed by com bining an infrared light em itting diode a n d a PN PN elem ent {photothyristor) that can w ith stan d high voltages. The device is encased in an 8-pin plastic package. The o u tp u t PN PN elem ent of the C JC S 3 0 form s a b rid g e configuration, giving , . In=40 mA / f / / / -· / AK- 2 1 0,5 0 .? 0,1 0,5 0.6 0.7 0,8 0,9 1.0
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E86831

diode in40

Abstract: 2SJ474-01L 90 tf 25 50 Reverse Diode Description Symbol Conditions min. typ. max. Unit Avalanche Capability Iav . L=100jyH Tch=25°C See Fig.1 and Fig.2 -7 A Diode Forward On-Voltage Vsd , BOTTOM VIEW in40-5 10 o 4.5±0.2* 2.7 ro O -H rO rat n T1"0-2 0 .l-o.i n /+0-2 OA o CONNECTION , Electric Co.,Ltd. I^y T Y 0257-R-003a Forward characteristic of reverse of diode IF=f (VSD) :80jWs pules
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2SJ474-01L 2SJ474-01S 2SJ474-01 0257-R-004 0257-R-003

3way splitter, circuit diagram

Abstract: MAAM-009450 anti-parallel diode pair can be used to protect the IC. Please reference application note AN3028 on http , to 3 GHz (power off) out1 to in_+25° out1 to in_-40° out1 to in_+85° out2 to in_+25° out2 to in_-40° out3 to in_-40° 0 out2 to in_+85° out3 to in_+25° out3 to in_+85° -10
M/A-COM
Original
MAAM-009450 S2083 3way splitter, circuit diagram 2 way rf splitter ic B82422A1102K100 M513 MAAM-009450-001SMB MAAM-009450-TR3000 MAAM-009450-TR1000

1N407S

Abstract: IN407 1N4057 thru Micro/semi Corp. 1N4085A The diode experts SANTA ANA, CA / SCOTTSDALE, AZ For more information call: (602) 941-6300 FEATURES . ZENER VOLTAGE 12.4V to 200V . TEMPERATURE COEFFICIENT RANGE: 0.005%/°C to 0.002%/°C MAXIMUM RATINGS See Electrical Characteristics Below DC Power Dissipation: Case CC: 1.5W At 25°C derate Case DD: 2W Linearly to Zero Case EE: 2.5W at + 150 , 00 90 005 002 2 15 86 55 to i 25 lo â'¢ 100 55 to , 25 to + 100 CC CC IN4068 IN40&8A â :/ 3/ 7 5 7
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1N4057A 1N4060A IN4061 IN4062 1N407S IN407 ANA 618 IN4067 ana 618 equivalent 1N406 1N40S7 1N40S8 IN4058A 1N40S9 1N40S9A

2 way rf splitter circuit diagram

Abstract: PQFN8 using an inexpensive anti-parallel diode pair can be used to protect the IC. Please reference , _+25° out2 to in_+25° out1 to in_-40° out2 to in_-40° out1 to in_+85° out2 to in_+85° -10 +25°C
M/A-COM
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MAAM-009879-TR3000 2 way rf splitter circuit diagram PQFN8 2 way splitter, circuit diagram PIN diode 12 GHz design CATV 2 way Splitter MAAM-009879 MAAM-009879-TR1000 MAAM-009879-001SMB

diode in40

Abstract: Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current , tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery , ) 10 100 Figure 10: Single Pulse Power Rating Junction-to8 Ambient (Note E) 8.5 0.0 In40
Alpha & Omega Semiconductor
Original
AON3408 GS10V

transistor sd 13003

Abstract: 4R7 inductor types) ±2.0% a transistor, a coil, a diode, and capacitors Duty ratio: 29% (PFM control) 29 to 100 , components Coil (L) Diode (SD) Output capacitor (COUT) Input capacitor (CIN) Transistor (PSW) Base , . MA2Q737 (Schottky diode) :Nichicon Corporation F93 (16 V, 47 F, tantalum) :Nichicon Corporation F93 (16 , kHz 4 % 4 4 Coil (L) :Sumida Corporation CDRH6D28-100 Diode (SD) :Matsushita Electric Inducstrial Co., Ltd. MA2Q737 (Schottky diode) Output capacitor (COUT) :Nichicon Corporation F93
Seiko Instruments
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S-8541 S-8540 transistor sd 13003 4R7 inductor sd 13003 transistor 13003 sd TRANSISTOR 13003 TRANSISTOR equivalent pnp 13003 transistor power supply circuits S-8540/8541 S8540

transistor sd 13003

Abstract: , selectable in 0.1V steps (A, C types) ±2.0% a transistor, a coil, a diode, and capacitors Duty ratio: 29 , External components Coil (L) Diode (SD) Output capacitor (COUT) Input capacitor (CIN) Transistor (PSW) Base , Electric Inducstrial Co., Ltd. MA2Q737 (Schottky diode) :Nichicon Corporation F93 (16 V, 47 F, tantalum , ) :Sumida Corporation CDRH6D28-100 Diode (SD) :Matsushita Electric Inducstrial Co., Ltd. MA2Q737 (Schottky diode) Output capacitor (COUT) :Nichicon Corporation F93 (16 V, 47 F, tantalum) Input capacitor (CIN
Seiko Instruments
Original

4R7 inductor

Abstract: transistor sd 13003 , selectable in 0.1V steps (A, C types) ±2.0% a transistor, a coil, a diode, and capacitors Duty ratio: 29 , VOUT fOSC VSENSE ISENSE VSH VSL ISH ISL tSS EFFI External components Coil (L) Diode , (Schottky diode) :Nichicon Corporation F93 (16 V, 47 F, tantalum) :Nichicon Corporation F93 (16 V, 47 F , Coil (L) :Sumida Corporation CDRH6D28-100 Diode (SD) :Matsushita Electric Inducstrial Co., Ltd. MA2Q737 (Schottky diode) Output capacitor (COUT) :Nichicon Corporation F93 (16 V, 47 F, tantalum) Input
Seiko Instruments
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S-8540A15FN-IAAT2G 8541a seiko 320 240 8541AX S8541

diode in48

Abstract: IN58 diode , D4, D5, D7, D8, D13, D14 14 3 D3, D6, D9 Diode SBR 3A 40V Power DI123 Diodes Inc
Texas Instruments
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diode in48 IN58 diode SBAU186 DDC264EVM DDC264 SBAS368 REG1117-5 SBVS001
Abstract: can see a value outside the absolute maximum ratings should be protected by Scholtky diode clamps , . Figure 9. shows he equivalent cir cuit for A in40 n AV dd -V W - 8 7 pF < } > s s. - T " " , ratings (AVqd or DVqq+0.5 V or AGND -0 .5 V) should be protected by diode clamps (HP5082-2835) from input -
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MP8795 694-3-R10 MP7226 MP7641

diode in40

Abstract: 1N3B digital inputs are protected from ESD by a 30V zener diode between the input and +Vsup, and can be driven , OUTb OUTA in40 in3b in2B 0.176'^ 4.47mm â  li 0.178" 4.52 mm GND N.C. Ai MAX368 INs OUT INÂ
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MAX369 1N3B MAX368CJN MAX368CWN MAX368EJN MAX368EPN MAX368EWN MAX368/369

dlp afe 1000

Abstract: diode IN47 IN22 IN23 IN24 IN25 IN26 IN27 IN28 IN29 IN30 IN31 IN32 IN33 IN34 IN35 IN36 IN37 IN38 IN39 IN40 IN41 , of pixels. Each pixel consists of a photo diode and Thin Film Transistor switch. All of the pixels in , light intensity. This charge is sampled in self capacitance of the photo diode. The columns are scanned one by one and the AFE0064 converts an individual photo diode charge into a proportional voltage. Pixel TFT Switch Photo Diode AFE0064 EXTC Internal 1.69 V 1 mF FLAT PANEL DETECTOR ADC
Texas Instruments
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dlp afe 1000 diode IN47 AFE 1000 DLP IN2-3IN24 SLAS672

CHN 920 diode

Abstract: IN22 IN23 IN24 IN25 IN26 IN27 IN28 IN29 IN30 IN31 IN32 IN33 IN34 IN35 IN36 IN37 IN38 IN39 IN40 IN41 , of pixels. Each pixel consists of a photo diode and Thin Film Transistor switch. All of the pixels in , light intensity. This charge is sampled in self capacitance of the photo diode. The columns are scanned one by one and the AFE0064 converts an individual photo diode charge into a proportional voltage. Pixel TFT Switch Photo Diode AFE0064 EXTC Internal 1.69 V 1 mF FLAT PANEL DETECTOR ADC
Texas Instruments
Original
CHN 920 diode
Abstract: IN22 IN23 IN24 IN25 IN26 IN27 IN28 IN29 IN30 IN31 IN32 IN33 IN34 IN35 IN36 IN37 IN38 IN39 IN40 IN41 , of pixels. Each pixel consists of a photo diode and Thin Film Transistor switch. All of the pixels in , light intensity. This charge is sampled in self capacitance of the photo diode. The columns are scanned one by one and the AFE0064 converts an individual photo diode charge into a proportional voltage. Pixel TFT Switch Photo Diode AFE0064 EXTC Internal 1.69 V 1 mF FLAT PANEL DETECTOR ADC Texas Instruments
Original
ISO/TS16949

CHN 920 diode

Abstract: diode in40 IN38 IN39 IN40 IN41 IN42 IN43 IN44 IN45 IN46 IN47 1 2 3 4 5 6 7 8 9 10 11 12 13 , of pixels. Each pixel consists of a photo diode and Thin Film Transistor switch. All of the pixels , light intensity. This charge is sampled in self capacitance of the photo diode. The columns are scanned one by one and the AFE0064 converts an individual photo diode charge into a proportional voltage. Pixel TFT Switch Photo Diode AFE0064 EXTC Internal 1.69 V 1 mF FLAT PANEL DETECTOR
Texas Instruments
Original
AFE0064IPBK AFE0064IPBKR IN17 REF5025 OPA2376
Abstract: IN38 IN39 IN40 IN41 IN42 IN43 IN44 IN45 IN46 IN47 1 2 3 4 5 6 7 8 9 10 11 12 13 , of pixels. Each pixel consists of a photo diode and Thin Film Transistor switch. All of the pixels , light intensity. This charge is sampled in self capacitance of the photo diode. The columns are scanned one by one and the AFE0064 converts an individual photo diode charge into a proportional voltage. Pixel TFT Switch Photo Diode AFE0064 EXTC Internal 1.69 V 1 mF FLAT PANEL DETECTOR Texas Instruments
Original

CHN 920 diode

Abstract: AFEXR0064 IN38 IN39 IN40 IN41 IN42 IN43 IN44 IN45 IN46 IN47 1 2 3 4 5 6 7 8 9 10 11 12 13 , of pixels. Each pixel consists of a photo diode and Thin Film Transistor switch. All of the pixels , light intensity. This charge is sampled in self capacitance of the photo diode. The columns are scanned one by one and the AFE0064 converts an individual photo diode charge into a proportional voltage. Pixel TFT Switch Photo Diode AFE0064 EXTC Internal 1.69 V 1 mF FLAT PANEL DETECTOR
Texas Instruments
Original
AFEXR0064 CHN 920 circuit diagram of Zigbee Based Wireless Electron TFT source driver
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