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ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
ISL58315CRTZ Intersil Corporation High Speed Triple Laser Diode Drivers; TQFN40; Temp Range: 0° to 70° visit Intersil Buy
ISL58303DRTZ-T7A Intersil Corporation 800mA Triple Output Laser Diode Driver; TQFN24; Temp Range: 0° to 70° visit Intersil Buy

diode byt 11600

Catalog Datasheet MFG & Type PDF Document Tags

diode byt 11600

Abstract: diode P600M DC R5 27K 5% 18 C2 100µF 450V 3 R11 R21 5.1K 1% C9 330nF 13 D5 BYT 11600 , 13 12 11 6 1 20 R13 STH/STW15NA50 Q1 15 5% C12 270pF 630V C3 D5 BYT 11600 1nF R4 2.7K 5% C4 1nF R16 24K 1% C6 1µF 16V R18 1.8K 4W R2 11K 1 , dissipative start-up circuit, a diode (D2) to speed-up the MOS start-off time and (even if a single resistor
STMicroelectronics
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L4981A L4981B L4981 DIP20 L4981X L4981XD diode byt 11600 diode P600M DC B1ET3411A STTA5 C12 IC GATE 5L

diode byt 11600

Abstract: fast diode byw 98 200 Kingdom - U.S.A 6/6 ® BYT 11-600 1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH , °2 PRINTED CIRCUIT Soldering BYT 11-600 1000 Figure 5. Peak forward current versus peak forward , BYT 01-200 400 FAST RECOVERY RECTIFIER DIODES FAST RECOVERY RECTIFIER VERY LOW REVERSE RECOVERY , DIODE IN CONVERTERS AND MOTORS CIRCUITS RECTIFIER IN S.M.P.S. F 126 (Plastic) ABSOLUTE RATINGS , Symbol BYT 01- Parameter Unit 200 300 400 VRRM Repetitive Peak Reverse Voltage
STMicroelectronics
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fast diode byw 98 200 BYW 200 fast diode ifm "40 A" transil 30 V diode byt 45 BYW 62 fast diode ifm if 40 A transil

flyback transformer 4kV

Abstract: morocco 9648 ,RING/GND, like : BYT 11-600 or BYW 100-200 for through hole assembly, STTB 106U or STPR 120A for SMD , flyback transformer. On the secondary side, the diode is reverse biased, thus the load is being supplied , . The diode is forward biased, and the stored energy is delivered to the output capacitor and than on , VPOS voltage. The STN4NF03L. with a VDS = 30V satisfies this parameter. At the same way, the diode , chosen. ­ a high efficiency fast recovery diode like the ST SMBYT01-400 showing a (Trr Max=35ns @ VF
STMicroelectronics
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AN2132 flyback transformer 4kV morocco 9648 TRAFO STEP UP MGPWG-00007 step down trafo ring generator SMD transformer STLC3075 AN2118 AN21132/0305

byt 78v

Abstract: INDUCTOR DE 100UH SMD PACKAGE VBAT/TIP,RING, TIP,RING/GND, like : BYT 11-600 or BYW 100-200 for through hole assembly, STTB 106U or , condition : energy from Vpos is stored in the inductor, diode reverse biased, load on VBAT powered by the , is delivered to the output capacitor and hence on the load, by the diode forward biased. An , an high efficiency fast recovery diode like the SMBYW01-200 showing a Trr Max=35ns @ VF = 1A ­ of
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AN2117 STLC3055N STLC3055Q byt 78v INDUCTOR DE 100UH SMD PACKAGE transistor smd za IRF9510S AN2117/1105

INDUCTOR DE 100UH SMD PACKAGE

Abstract: smd sttb : BYT 11-600 or BYW 100-200 for through hole assembly, STTB 106U or STPR 120A for SMD assembly. Also , turn-on condition : energy from Vpos is stored in the inductor, diode reverse biased, load on VBAT , in the inductor is delivered to the output capacitor and hence on the load, by the diode forward , , 100uH, ­ an high efficiency fast recovery diode like the SMBYW01-200 showing a Trr Max=35ns @ VF = 1A
STMicroelectronics
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smd sttb sm6t39a STPR120A IRF9510 ptc application note

AN2118

Abstract: INDUCTOR DE 100UH SMD PACKAGE : BYT 11-600 or BYW 100-200 for through hole assembly, STTB 106U or STPR 120A for SMD assembly. Also , , diode reverse biased, load on VBAT powered by the energy stored in the output capacitors CV. Mosfet in , load, by the diode forward biased. An internal circuit controls the duty-cycle of the gate signal so , made by Sumida type CDRH125, 100uH, ­ an high efficiency fast recovery diode like the SMBYW01
STMicroelectronics
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CV 360 K20 diode BYW 79

dzw*06

Abstract: l4981 AN628 5.1K 1% C9 330nF 13 D5 BYT 11600 1nF R4 2.7K 5% 0.07 2W C4 1nF R16 24K 1 , voltage is rectified by a diode bridge and the rectified voltage delivered to the boost converter. The , ), a boost diode (D), an output capacitor (CO) and, obviously, a control circuitry. Referring to the , ), switch (Q) and diode (D) currents PO I Lpk = I Qpk = I Dpk = 2 -V lpk 2) RMS inductor current , PO 16 V lpk I Qrms = - 2 ­ -V lpk 3 VO 4) Average diode current
STMicroelectronics
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dzw*06 l4981 AN628 220V ferrite core transformer 431w transistor stm12nm50 transformer winding formula 220v Ac to 110v Ac AN628 D95IN281B

l4981 AN628

Abstract: L4981 % C9 330nF 13 D5 BYT 11600 1nF R4 2.7K 5% 0.07 2W C4 1nF R16 24K 1% C6 , description. The A.C. line voltage is rectified by a diode bridge and the rectified voltage delivered to the , controlled power switch (Q), a boost diode (D), an output capacitor (CO) and, obviously, a control circuitry , current = 0): 1) Peak inductor (L), switch (Q) and diode (D) currents PO I L pk = I Qpk = I Dpk = 2 , VO 4) Average diode current IDavg = IO 5) RMS diode current PO 16 Vlpk ID rms = -
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200w power amplifier circuit diagram graetz bridge 100v 3a L4981 PFC 200w computer power supply Circuit diagram 220v 2a diode bridge 220V ac to 9V dc converter circuit

220v generator power booster

Abstract: 3kw pfc using l4981 application note 450V 3 R11 R21 5.1K 1% C9 330nF 13 D5 BYT 11600 1nF R4 2.7K 5% C4 1nF , fig. 2) can be summarized in the following description. The A.C. line voltage is rectified by a diode , The section consists of a boost inductor (L), a controlled power switch (Q), a boost diode (D), an , ), switch (Q) and diode (D) currents PO ILpk = IQpk = IDpk = 2 Vlpk 2) RMS inductor current 2 , Vlpk 8) RMS high frequency capacitor current 2 - 316 V lpk V O 4) Average diode
STMicroelectronics
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220v generator power booster 3kw pfc using l4981 application note sawtooth generator using op-amp APPLICATION L4981 5tta5060 Generator 12V 220V 50Hz

220v generator power booster

Abstract: 3kw pfc using l4981 application note 450V 3 R11 R21 5.1K 1% C9 330nF 13 D5 BYT 11600 1nF R4 2.7K 5% C4 1nF , fig. 2) can be summarized in the following description. The A.C. line voltage is rectified by a diode , The section consists of a boost inductor (L), a controlled power switch (Q), a boost diode (D), an , ), switch (Q) and diode (D) currents PO ILpk = IQpk = IDpk = 2 Vlpk 2) RMS inductor current 2 , current 3) RMS switch current IQrms = PO Vlpk 2 - 316 V lpk V O 4) Average diode
STMicroelectronics
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rac 16a 400v thomson Ferrite Materials b50 2500 12v 200w amplifier thomson ferrites b50 amp mosfet schematic circuit 200w full controlled ac-dc converter

MGPWG-00007

Abstract: AN2132 are: te le BYT 11-600 or BYW 100-200 for through hole assembly STTB 106U or STPR , transformer. On the secondary side, the diode is reverse biased, thus the load is being supplied by the , diode is forward biased, and the stored energy is delivered to the output capacitor and then on the , 30 V satisfies this parameter. In the same way, the diode SMBYT01-400 with a VRRM of 400 V is able , . For this reason the power Mos STN4NF03L has been chosen. a high efficiency, fast recovery diode
STMicroelectronics
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STLC3055

SM6T39A

Abstract: AN2118 diodes are: BYT 11-600 or BYW 100-200 for through hole assembly STTB 106U or STPR 120A for , , diode is reverse biased, and the load on VBAT is powered by the energy stored in the output capacitors , output capacitor and hence on the load, by the forward biased diode. An internal circuit controls the , SMD coil made by Sumida (type CDRH125, 100 µH), with a high efficiency fast recovery diode like the
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PC00335

bux transient voltage suppressor

Abstract: BDX54F equivalent -400 BYT230PIV-600 BYT230PIV-EO0 BYT231PIV 1000 BYT?31PIV-200 BYT231PIV 300 BYT231P1V-400 BYT231PIV
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bux transient voltage suppressor BDX54F equivalent EF68B50 2N4895 ua776mh IMSC012

NIKKO NR 9600

Abstract: SEMICON INDEXES  SEMiCON INDEX O' i i< I § VOLUME 2 INTERNATIONAL DIODE and THYRISTOR INDEX 17th Edition , DICKSON ELECTRONICS CORPORATION* DIX ABB-IXYS SEMICONDUCTOR GmbH IXY DIODE TRANSISTOR I NC. DIT ABB , Division AEI CMI, INC.* GENERAL DIODE CORP. GED COLLMER SEMICONDUCTOR INC. COL GE / GENERAL ELECTRIC , INTERNATIONAL COMPONENTS CORPORATION INC INTERNATIONAL DIODE CORPORATION IND INTERNATIONAL RECTIFIER CORP. IRG , POWER SEMICONDUCTORS OPT OPTO DIODE CORP. OPD OPTRON, INC.' OSHINO LAMPS LTD. OSH OXLEY
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NIKKO NR 9600 SEMICON INDEXES varicap serie kv diode SR360 BL diodo ZO 150 69 Diode Equivalent 1ss99

irf 1507 data sheet

Abstract: 30F132 .119 INTERNATIONAL RECTIFIER Diode Fast , since 1969. Facilitates accurate substitution when used with the diode D.A.T.A. Book. 81F3803. Type XR
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irf 1507 data sheet 30F132 2wL1 TMS7020 agastat 7022 PK International Rectifier Mexico 9240 part C03-1534

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 . Mica Washers, Transistor and Diode Microswitches . Modules, Radar , ) Diode Characteristics. Equivalents and Substitutes
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THERMISTORS nsp 037 Thyristor TAG 9118 a1273 y k transistor ICA 0726 0148 Transformer AM97C11CN transistor SK A1104 200X300X360