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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
LMV393QPWR Texas Instruments IC DUAL COMPARATOR, 9000 uV OFFSET-MAX, 450 ns RESPONSE TIME, PDSO8, TSSOP-8, Comparator visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode b6 k 450

Catalog Datasheet MFG & Type PDF Document Tags

Q1NC45

Abstract: D2NC45 Drain-source Voltage (VGS = 0) 450 V Drain-gate Voltage (RGS = 20 k) 450 V Gate- source , STD2NC45-1 STQ1NC45 s s s s s VDSS RDS(on) ID Pw 450 V 450 V < 4.5 < 4.5 1.5 , ) Tj Tstg A Peak Diode Recovery voltage slope 3 V/ns -65 to 150 -65 to 150 , Rating VDS = Max Rating, TC = 125 °C IGSS Min. V(BR)DSS Max. 450 Unit V 1 50 , ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Forward On Voltage ISD = 1.5 A
STMicroelectronics
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D2NC45 Q1NC45 STQ1NC45-AP d2nc

PSKD 250

Abstract: diode b6 k 450 PSKD 250 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet = 2x 450 A = 2x 290 A , Transient thermal impedance junction to case (per diode) 30° DC K/W ZthJC RthJC for various , junction to heatsink (per diode) K/W ZthJK 1 2 3 ti (s) 0.0035 0.0165 0.1091 i , sine sine Maximum Ratings 450 A 290 A Md 50/60 Hz, RMS IISOL 1 mA t = 1 min t , calculations only TVJ = TVJM RthJC per per per per RthJK 11 000 11 700 9000 9600 diode
POWERSEM
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PSKD 250 diode b6 k 450 str 380 ZY 250 brass terminal bridge rectifier STR 456
Abstract: 6/10 Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD260N 450 DC , to ambient R thCA 1800 P tot [W] 0,040 0,030 B6 R thCA [ K/W] 3~ 0,060 1400 , Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD260N Key Parameters , 0,68 mâ"¦ RthJC 0,164 K/W Base plate 50 mm For type designation please refer to , Datenblatt / Data sheet Netz-Dioden-Modul Rectifier Diode Module DD260N DD260N Elektrische Infineon Technologies
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PSKD 220

Abstract: STR 456 PSKD 220 Diode Modules IFRMS IFAVM VRRM Preliminary Data Sheet = 2x 450 A = 2x 270 A , to case (per diode) 30° DC K/W ZthJC RthJC for various conduction angles d: d 0.10 , sine sine Maximum Ratings 450 A 270 A Md 360 340 280 260 A A A A 000 000 , only TVJ = TVJM RthJC per per per per diode; DC current module diode; DC current module , K/W K/W K/W K/W QS IRM TVJ = 125°C, IF = 400 A; -di/dt = 50 A/µs 760 275 µC A
POWERSEM
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PSKD 220

Q1NC45R

Abstract: Q1NC45 STQ1NC45R Drain-source Voltage (VGS = 0) 450 V Drain-gate Voltage (RGS = 20 k) 450 V , STD2NC45-1 STQ1NC45R s s s s s V DSS R DS(on) ID Pw 450 V 450 V < 4.5 < 4.5 , Derating Factor dv/dt (1) Tj Tstg Peak Diode Recovery voltage slope 3 V/ns -65 to 150 -65 , Max Rating V DS = Max Rating, TC = 125 °C IGSS Min. V(BR)DSS Max. 450 Unit V 1 , 12 18 ns ns ns SOURCE DRAIN DIODE Symbol Parameter ISD ISDM (2) Source-drain
STMicroelectronics
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Q1NC45R STQ1NC45R-AP low vgs mosfet to-92

74HCT

Abstract: HCT245 DC input diode current, l|K ± 100mA DC output diode current, lOK ± 100mA Short circuit output , 74HCT 54HCT Unit min typ max min typ max vcc Supply voltage 4.50 5.00 5.50 4.50 5.00 5.50 V V , HCT245 Pin Configurations BO B1 B2 B3 B4 17 v_/ 16 _ _ 1_ ul B5 B6 H < B7 I io VSS A7 , A3 A4 A5 A6 20 I VCC TTjl 18 I BO TT| Bi 16] b2 Iii B3 V4~| B4 If] B5 TT| B6 TT1 B7
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74HCT245P 74HCT245D 54HCT245D RB54HCT245D 74HCT245C 54HCT245C RB54HCT245C 64HCT

CHN 747

Abstract: DIODE RK 306 thyristor(diode); DC current < 0.129 K/W per module £ 0.065 K/W R»k (DC) per thyristor(diode); DC current s 0.169 K/W per module < 0.0845 K/W a, TVJ=125°C; l,-400A; -di/dt-50A/|ls S 760 HC In.  , diode) Rmjc for various conduction d R»jc(K/W) DC 0.129 180° 0.133 120" 0.136 60' 0.145 30 , 4bflb52b 000171a 471 MIIXY niXYS Diode Modules Symbol MDD220 lTAV = 2 x 270 A VRRM = , : Type ZY 250, material brass Test conditions Maximum Ratings IfRMS T.J-T.ju 450 A I,.« Tc
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OCR Scan
MDD220-06N1 MDD220-08N1 MDD220-12N1 MDD220-14N1 MD0220-16N1 CHN 747 DIODE RK 306 CHN 450 oms 450 E72873

107 J117 surface mount TRANSISTOR

Abstract: MRF1570FT1 C38 B5 B6 C34 MRF1570T1 C3 C19 C18 C17 B2 C16 C14 R2 C5 C15 Figure 22. 450 ­ 520 MHz , C15 C44 C43 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 , C27 C21 C25 C43 B5 B6 C39 MRF1570T1 L6 L5 B3 B4 C33 VDD GND C28 C36 C35 C34 L7 C30 C31 C32 , C5 DUT Z19 C22 R4 Z4 C6 R2 Z6 Z8 C8 Z10 Z12 L6 B5 C16 C15 C42 B6 C41 C40 C39 Z14 Z16 C26 L2 L4 C28 Z18 C24 C31 C30 VGG C20 C19 C18 B2 + C17 + VDD C38 B1, B2, B3, B4, B5, B6 C1, C9
Motorola
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MRF1570FT1 107 J117 surface mount TRANSISTOR z15 Diode glass zener diode z7 b2 C35 zener MRF1570T1/D

transistor c36

Abstract: J117 surface mount TRANSISTOR B5 Z22 Z21 Z19 C31 VGG C15 C44 C43 B6 C42 C41 C40 + VDD C39 B1, B2, B3, B4, B5, B6 C1, C32, C37, C43 C2, C20, C21 C3 C4, C5 C6, C7 C8, C9 C10, C15 C11, C16, C33, C39 , C24 C26 C27 C21 C25 C43 B5 B6 C39 MRF1570T1 L6 L5 B3 B4 C33 VDD GND C28 C36 C35 C34 L7 C30 , Z6 Z8 C8 Z10 Z12 L6 B5 C16 C15 C42 B6 C41 C40 C39 Z14 Z16 C26 L2 L4 C28 Z18 C24 C31 C30 VGG C20 C19 C18 B2 + C17 + VDD C38 B1, B2, B3, B4, B5, B6 C1, C9, C15, C32 C2, C3 C4 C5, C6 C7, C8
Motorola
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transistor c36 J117 surface mount TRANSISTOR zener diode c25 c25 mosfet c38 transistor

TG-UTB01527S

Abstract: SL4X30MW100T C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead,2.5 k/100 MHz. Murata Q1 , , COG Murata C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k/100 MHz , -31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k/100 MHz Murata Q1 RF transistor , B6 Ferrite bead, 2.5 k/100 MHz Murata Q1 RF transistor, 2SC9018 ETC R34 Resistor , ) Stereo LED on conditions Total R to GND (k, 1%) Band1 FM1 87­108 MHz 50 µs Separation
Silicon Laboratories
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TG-UTB01527S SL4X30MW100T si4844 SL8X50MW70T UMEC TG-UTB01526 TG-UTB01526 AN602 AN610

12V6GT

Abstract: 6V6GT .Octal T-9 Base .Octal 6 or 7 Pin, B6-81 B6-84, B7-7 or B7-59 Basing , Grid No. 1 to Plate . Input: gl to (h + k + g2 + g3) . Output: p to (h + k + g2 + g3) . RATINGS (Design Maximum Rating , . â'" Zero Signal Plate Current . 49.5 T9 6V6GTA 6.3 Volts 450 Ma 11 Seconds 200 , required to protect the tube in the absence of excitation. DAMPER 6W4GT 25W4GT 4CG Heater-Cathode Diode
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12V6GT 6V6GT B585 12V6-GT 6V6GTA 6v6gta tube data B6-81 B6-84 B5-82 B5-85
Abstract: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , . 8 Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 , impedance junction to heatsink (per thyristor or diode) K/W 0.25 ZthJK RthJK for various , = TVJM VR = 0 òi2dt 450 250 6 7 1 MCD Features International standard package , /97-115 Nm/lb.in. 750 g q q Data according to IEC 60747 and refer to a single thyristor/diode IXYS
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MCC255 MCD255

ZY180L

Abstract: 25518I MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 RthJC for various conduction , (per thyristor or diode) K/W 0.25 ZthJK RthJK for various conduction angles d: 0.20 d , TVJM VR = 0 òi2dt 450 250 6 7 1 MCD Features International standard package Direct , /diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
IXYS
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ZY180L 25518I ixys mcc 255

5pgm

Abstract: Transient thermal impedance junction to case (per thyristor or diode) K/W ZthJC RthJC for various , heatsink (per thyristor or diode) K/W RthJK for various conduction angles d: 0.25 ZthJK d , WESTCODE SEMICONDUCTORS Thyristor Modules Thyristor/Diode Modules VRSM VDSM VRRM ITRMS = 2 x 450 A ITAVM = 2 x 250 A VRRM = 1200 - 1800 V 3 Type VDRM V 1200 1400 1600 , = 0 (di/dt)cr 450 250 TVJ = TVJM VR = 0 i2dt 3 Maximum Ratings q q Simple
Westcode Semiconductors
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5pgm

diode b6 k 450

Abstract: MCC 255 MCD 255 Thyristor Modules Thyristor/Diode Modules ITRMS = 2x 450 A ITAVM = 2x 250 , impedance junction to case (per thyristor or diode) K/W ZthJC 0.20 RthJC for various conduction , (per thyristor or diode) K/W 0.25 ZthJK RthJK for various conduction angles d: 0.20 d , TVJM VR = 0 òi2dt 450 250 6 7 1 MCD Features International standard package Direct , /diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions
IXYS
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75AFC

Abstract: L56A o w > 0 0 Ip 50 100 A 150 Fig. 18 Diode turn-off energy dissipation per pulse B6-44 0796 © by , 20 k ii T ca se= 25/80 °C T ca se= 25/80 °C; tp - 1 ms per V a lu e s U nits 1200 1200 1 0 0 /7 , . D1N 40 040 V V A A V W "C V S K M 100 G B 123 0 S K M 100 G A L 123 D S K M 1 0 0 G A R 1 2 3 D 6) DINIEC68T.1 Inverse Diode If= - lc T c a se-25/80 CC IfM= - IC M T ca se-25/80 C; tp - , 30 70 450 70 10 8 2,0(1,8) 2,25(2,05) 12 27(40) 3(10) 1,85(1,6) 2,0(1,8) 9 30(45) 3,5(11) -
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75AFC L56A b644 us25x 100GB CASED61 B6-46

WPT 250-16

Abstract: thyristor t 380 . 8 Transient thermal impedance junction to case (per thyristor or diode) 30° DC K/W RthJC , diode) K/W 30° DC ZthJK RthJK for various conduction angles d: 0.15 d DC 180°C 120 , WESTCODE SEMICONDUCTORS ITRMS = 2 x 450 A ITAVM = 2 x 287 A VRRM = 800 - 1800 V Thyristor Modules Thyristor/Diode Modules VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 , 3 450 287 A A t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 9000 9600 7800 8500
Westcode Semiconductors
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WPT 250-16 thyristor t 380 WPT+250-16 Westcode uk

2SC9018

Abstract: 2sc9018 transistor , ±5%, COG Murata C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead,2.5 k , Murata C30-31 Capacitor, 33 nF, ±5%, COG Murata B6 Ferrite bead, 2.5 k/100 MHz Murata , B6 Ferrite bead, 2.5 k/100 MHz Murata Q1 RF transistor, 2SC9018. ETC R34 , B6 Ferrite bead, 2.5 k/100 MHz Murata Q1 RF transistor, 2SC9018 ETC R34 Resistor , recommended for the pin 15 RST. Pull-up resistor R3 of 10 k is necessary for pin 16 SDIO. VR1 (100 k / 10
Silicon Laboratories
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2sc9018 transistor 2sc9018 equivalent z5u transistor Z5U diode

2SC2930

Abstract: ETG36-040D applications Device type Vcbo Votts VcEÃ Volts VcgO (sus) Volts le Pe cont. Amps. Watts hfe min. k Amps. VCE , Equivalent 'ciifui* ; . Page 40 â'¢ ETG36-040C 500 500 400 20 175 50 10 5 0.8 2.5 1.0 TO-3 17 Fig. B6 ETG36 , i.e. with built-in fast recovery diode or without. Please select the version best suited for your , 2SD2350 300 300 300 6 40 500 4 2 â'" â'" â'" TO-220F 2.5 Fig. B8 2SD1071 450 450 300 6 40 500 4 2 3 15 10 , ET386 300 250 250 4 40 1000 2 2 â'" â'" â'" TO-220F 2.5 Fig. B1 ET365 450 450 300 8 40 500 4 2 â'" â
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OCR Scan
ETG36-040D 2SD1797 2SD833 2SD916 2SD1726 2SD834 2SC2930 diode B4 B4 diode 2SD1073

WPT 72-12

Abstract: WPT 72-16 Modules Thyristor/Diode Modules VRSM VRRM VDSM VDRM V V 900 1300 1500 1700 1900 , 1640 A A TVJ = 45°C VR = 0 t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 14 450 13 , TVJ = 25°C; tP = 10 µs; VD = 6 V IG = 0.45 A; diG/dt = 0.45 A/µs 450 TVJ = 25°C; VD = 6 V; RGK , a per thyristor/diode; DC current per module per thyristor/diode; DC current per module 1 , TVJ = 25°C µC A 0.3 0.15 0.5 0.25 K/W K/W K/W K/W 12.7 9.6 50 mm mm m/s2
Westcode Semiconductors
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WPT 72-12 WPT 72-16 56us
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