NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Catalog Datasheet Results | Type | Document Tags |
| Abstract: SMD Switching Diodes Arrays(Multiple Terminals) Peak Mark- Reverse ing Voltage Code Part No. Max. Reverse Current @ VR Max. Forward Voltage Drop @ IF SMD Diodes Max. Max. Diode Reverse CapaciPackRecovery tance Pinout age Time @1MHz Diag. 0V CT Trr 7" Reel (PF) (ns) VRRM (V) VF (V) IF (mA) IR (uA) VR (V) UB 85 1.2 100 0.5 80 4 3 , 1 TWG4148AC-128W TWG4148AC-128W S8 85 1.2 100 0.5 80 4 4 3 MMBD3004BRM MMBD3004BRM B34 ... | Original |
1 pages, |
TWG4148T-16WS smd ub TWG4148AC-128WS TWG4148AD-125W TWG4148AD-125WS TWG4148AD-56WS TWG4148CD-126W TWG4148CD-126WS TWG4148SD-99WS TWG4148CD-70WS TWG4148CD-128WT TWG4148CD-126WT TWG4148AC-128W datasheet abstract |
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| Abstract: Voss ±20 V Drain Current lo -2 A Drain Peak Current lotpaU -4 A Body-Drain Diode Reverse Drain , Delay Time Rt=15il _ 45 _ ns Fall Time t> - 35 - ns Body-Drain Diode Forward Voltage Vor /^=-lA. Vc,j=0 - -0.8 - V Body-Drain Diode Reverse Recovery Time u If=-1A. VOJ=0 rfi',/(W=100A/MS 300 - ns , Manufacturer 2SJ117 2SJ117 blE ]> â- 44Tb2DS DGlS^lb b34 - HITACHI/(OPTOELECTRONICS) _ IHIT4 TYPICAL CAPACITANCE , Vl s -12 3 4 e 12 16 211 Gate Charge Q I nel MAXIMUM BODY-DRAIN DIODE ... | OCR Scan |
3 pages, |
2SK310 2SJ117 11X1 diode t25 4 HO b34 diode diode b34 2SK310 abstract |
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| Abstract: Marking Code: B34 MAXIMUM RATINGS (Per Diode) TJ = 25°C Unless otherwise noted Rating Symbol , MMBD3004BRM MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES 4 5 High Reverse Voltage Rating 6 , Diode) Tj = 25°C Unless otherwise noted Symbol Conditions Min Typ Max Units V BR I ... | Original |
3 pages, |
MMBD3004BRM diode marking b34 b34 diode marking code B34 MMBD3004BRM abstract |
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| Abstract: phototransistor and an infrared emitting diode in a molded plastic housing. The phototransistor has an enhanced , ]. 260° C Input Diode Forward DC Current. 50 mA Peak , measured at the end of the arm is 1.5 grams max. b?TôSÛD 00030E1 00030E1 b34 Optek Technology, Inc. 1215 W. , noted) SYMBOL PARAMETER MIN MAX UNITS TEST CONDITIONS Input Diode Vf Forward Voltage 1.60 V If , Current vs Forward Voltage Input Diode Collector Dark Current vs Ambient Temperature Normalized Output ... | OCR Scan |
2 pages, |
ON B34 b34 diode Diode 133 B34 DIODE B34 OPB68O OPB68O abstract |
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| Abstract: 31 47 tf Fall Time 15 30 SOURCE - DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic Test Conditions Min. Typ. Max. Unit "s Continuous Source Current (Body Diode) 4.7 A 'sm Pulsed Source Current1 (Body Diode) 18.8 Vsd Diode Forward Voltage2 ^GS = 0V , Iq = - Iq [Cont. , Followed. Semelab pic. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. â- Ã"1331Ã"7 OODlSbb b34 â- ... | OCR Scan |
2 pages, |
BFC62 DIODE on B34 T0220-AC BFC62 abstract |
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| Abstract: High Speed Rectification 6 5 4 1 Marking Code: B34 2 3 MAXIMUM RATINGS (Per Diode , MMBD3004BRM MMBD3004BRM SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE ARRAY This device features two series-connected diode pairs which can be connected to form a full-wave bridge. It is housed in a very small SOT23-6L surface mount package. SOT23-6L FEATURES High Reverse Voltage Rating Fast Switching Speed Low , CHARACTERISTICS (Per Diode) Tj = 25°C Unless otherwise noted Parameter Breakdown Voltage (Note 1) Forward Voltage ... | Original |
3 pages, |
marking code B34 diode marking b34 SOT23-6L Marking Code MMBD3004BRM MMBD3004BRM abstract |
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| Abstract: internal source-drain diode can eliminate applications such as DC/DC converters and high the need for an external Zener diode transient efficiency switching circuits where fast switching, suppressor, low in-line , Charge 6 nC Gate-Drain Charge 14 nC DRAIN-SOURCE DIODE CHARACTERISTICS Is Maximum Continuos Drain-Source Diode Forward Current 52 A 'sM Maximum Pulsed Drain-Source Diode Forward Current 120 A vSD Drain-Source Diode Forward Voltage VGS=0V'IS =26 A (Notell 0.93 1.3 V Tj = 125°C 0.85 ... | OCR Scan |
6 pages, |
NDP6030L NDB6030L DIODE B34 b34 diode NDP6030L/NDB6030L T0-220 NDP6030L/NDB6030L abstract |
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| Abstract: SEMICONDUCTOR SMAB34 SMAB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. 2 E FEATURES Low Profile Surface Mount Package. H A D Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free E Wheeling, and Polarity Protection Applications. APPLICATION 1 C Switching Power Supply. B DC/DC , Marking Type Name B34 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL ... | Original |
2 pages, |
SMAB34 diode schottky B34 DIODE ON SEMICONDUCTOR B34 diode marking b34 b34 diode NO b34 diode diode b34 b34 DIODE schottky marking B34 diode SCHOTTKY datasheet abstract |
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| Abstract: SEMICONDUCTOR SMBB34 SMBB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 1 Wheeling, and Polarity Protection Applications. A APPLICATION D Switching Power Supply. DC/DC Converter. , Range B34 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL MIN. TYP. ... | Original |
2 pages, |
diode schottky B34 diode marking b34 b34 MARKING b34 diode b34 DIODE schottky marking B34 diode SCHOTTKY diode b34 datasheet abstract |
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| Abstract: SEMICONDUCTOR SMCB34 SMCB34 TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATIONS. FEATURES Low Profile Surface Mount Package. B C Low Power Loss, High Efficiency. For Use in Low Voltage, High Frequency inverters, Free 2 Wheeling, and Polarity Protection Applications. 1 A APPLICATION D Switching Power Supply. DC/DC Converter. Telecommunication. F , B34 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL MIN. TYP. MAX. ... | Original |
2 pages, |
diode schottky B34 b34 diode 711 B34 b34 MARKING SMCB34 marking B34 diode SCHOTTKY b34 DIODE schottky diode b34 datasheet abstract |
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| # GHz S MA R 50 ! 12 Jul 1993 / 14:15:58 !BB914 BB914 BB914 BB914, Si Varicap Diode in SOT23 [b34V5u00] ! VR=4.50 V !f GHZ S11 ! MAG ANG .080 .99670 -70.2 .090 .99597 -76.9 .100 .99513 -83.0 .110 .99455 -88.7 .120 .99408 -93.9 .150 .99265 -107.3 .200 .99106 -123.8 .250 .98982 -135.6 .300 .98841 -144.4 .350 .98781 -151.3 .400 .98733 -156.9 .450 .98700 -161.6 .500 .98624 -165 www.datasheetarchive.com/files/siemens/ehdata/spar/bb914/b34v5u00.s1p |
Siemens | 13/07/1993 | 1.07 Kb | S1P | b34v5u00.s1p |
| # GHz S MA R 50 ! 12 Jul 1993 / 14:15:43 !BB914 BB914 BB914 BB914, Si Varicap Diode in SOT23 [b34V0u00] ! VR=4.00 V !f GHZ S11 ! MAG ANG .080 .99613 -74.4 .090 .99542 -81.2 .100 .99466 -87.4 .110 .99408 -93.1 .120 .99374 -98.3 .150 .99219 -111.5 .200 .99080 -127.6 .250 .98937 -138.9 .300 .98829 -147.3 .350 .98776 -153.9 .400 .98724 -159.2 .450 .98698 -163.6 .500 .98624 -167 www.datasheetarchive.com/files/siemens/ehdata/spar/bb914/b34v0u00.s1p |
Siemens | 13/07/1993 | 1.07 Kb | S1P | b34v0u00.s1p |
| Tuning/Tuner Type Category Function Application Category BB182B 34 BB182B BB182B BB182B BB182B VHF variable capacitance diode The BB182B BB182B BB182B BB182B is a planar technology variable capacitance diode in a SOD523 (SC-79 SC-79 SC-79 SC-79) package. The Varicap Varicap diodes Tuners Television and Video Systems Varicap diodes BB182B BB182B BB182B BB182B VHF variable capacitance diode 26-Nov-99 Product Specification 8 www.datasheetarchive.com/files/philips/pip/bb182b_2-v1.html |
Philips | 14/02/2002 | 7.64 Kb | HTML | bb182b_2-v1.html |
| Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100V T case = 100 o C for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100 V 0.2 0.2 5 5 mA mA mA mA I CEO Collector Cut-off Current (I B = 0) for BDX33B/34B V CB = 40 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 50V T case = 100 o C for BDX33B/34B V CB = 40 V 33B/34B for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C 80 100 V V V CER(sus) * Collector-emitter Sustaining Voltage (I B =0 R www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102-v1.htm |
STMicroelectronics | 02/04/1999 | 5.27 Kb | HTM | 4102-v1.htm |
| Parameter Test Conditions Min. Typ. Max. Unit I CBO Collector Cut-off Current (I E = 0) for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100V T case = 100 o C for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100 V 0.2 0.2 5 5 mA mA mA mA I CEO Collector Cut-off Current (I B = 0) for BDX33B/34B V CB = 40 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 50V T case = 100 o C for BDX33B/34B V CB = 40 V 33B/34B for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C 80 100 V V V CER(sus) * Collector-emitter Sustaining Voltage (I B =0 R www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102-v2.htm |
STMicroelectronics | 14/06/1999 | 5.23 Kb | HTM | 4102-v2.htm |
| E = 0) for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100V T case = 100 o C for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100 V 0 B/34B V CE = 40 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CE = 50V T case = 100 o C for BDX33B/34B V CE = 40 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CE = 50 V 0.5 0.5 10 10 m B/34B for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C 80 100 V V V CER(sus) * Collector-emitter Sustaining www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102-v3.htm |
STMicroelectronics | 25/05/2000 | 6.89 Kb | HTM | 4102-v3.htm |
| Collector Cut-off Current (I E = 0) for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100V T case = 100 o C for BDX33B/34B V CB = 80 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CB = 100 V 0.2 0.2 5 5 mA mA mA mA I CEO Collector Cut-off Current (I B = 0) for BDX33B/34B V CE = 40 V for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C V CE = 50V T case = 100 o C for BDX33B/34B V CE = 0) I C =100 mA for BDX33B/34B for BDX33C/34C BDX33C/34C BDX33C/34C BDX33C/34C 80 100 V V V CER(sus) * Collector www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/4102.htm |
STMicroelectronics | 20/10/2000 | 7.25 Kb | HTM | 4102.htm |
| ! SIEMENS Small Signal Semiconductors ! BB914 BB914 BB914 BB914 ! Si Tuning Diode in SOT23 ! VR = 4.5 V ! S-Parameters: July 1993 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.080 0.9967 -70.2 0.090 0.9960 -76.9 0.100 0.9951 -83.0 0.110 0.9946 -88.7 0.120 0.9941 -93.9 0.150 0.9927 -107.3 0.200 0.9911 -123.8 0.250 0.9898 -135.6 0.300 0.9884 -144.4 0.350 0.9878 -151.3 0.400 0.9873 -156.9 0.450 0.9870 -161.6 0.500 0.9862 -165.6 0.600 0.9855 -172.3 0 www.datasheetarchive.com/files/siemens/ehdata/spar/bb914/b34v5u00-v1.s1p |
Siemens | 08/08/1994 | 1.04 Kb | S1P | b34v5u00-v1.s1p |
| ! SIEMENS Small Signal Semiconductors ! BB914 BB914 BB914 BB914 ! Si Tuning Diode in SOT23 ! VR = 4 V ! S-Parameters: July 1993 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.080 0.9961 -74.4 0.090 0.9954 -81.2 0.100 0.9947 -87.4 0.110 0.9941 -93.1 0.120 0.9937 -98.3 0.150 0.9922 -111.5 0.200 0.9908 -127.6 0.250 0.9894 -138.9 0.300 0.9883 -147.3 0.350 0.9878 -153.9 0.400 0.9872 -159.2 0.450 0.9870 -163.6 0.500 0.9862 -167.5 0.600 0.9856 -173.9 0 www.datasheetarchive.com/files/siemens/ehdata/spar/bb914/b34v0u00-v1.s1p |
Siemens | 08/08/1994 | 1.03 Kb | S1P | b34v0u00-v1.s1p |
| ! SIEMENS Small Signal Semiconductors ! BB914 BB914 BB914 BB914 ! Si Tuning Diode in SOT23 ! VR = 4.5 V ! S-Parameters: July 1993 # GHz S MA R 50 ! f S11 ! GHz MAG ANG 0.080 0.9967 -70.2 0.090 0.9960 -76.9 0.100 0.9951 -83.0 0.110 0.9946 -88.7 0.120 0.9941 -93.9 0.150 0.9927 -107.3 0.200 0.9911 -123.8 0.250 0.9898 -135.6 0.300 0.9884 -144.4 0.350 0.9878 -151.3 0.400 0.9873 -156.9 0.450 0.9870 -161.6 0.500 0.9862 -165.6 0.600 0.9855 -172.3 0 www.datasheetarchive.com/files/infineon/ehdata/spar/bb914/b34v5u00.s1p |
Infineon | 17/02/1996 | 1.04 Kb | S1P | b34v5u00.s1p |