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diode a15

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , :+86-21-58341568 Transistor(pair) Part No. MAC VGT (V) Package 7 ≤1.5 ≤3 7 ≤1.5 TO-92 ≤5 10 ≤1.5 TO-220 ≤1.7/5A ≤10 25 ≤1.5 TO-220 ≤1.65/10A 65/10A ≤10 25 ≤1.5 TO-220 ≤1.65/15A 65/15A ≤25 50 ≤1.5 TO-220 ≥600/800 ≤1.55/20A 55/20A ≤25 50 ≤1.5 TO-220 35 ≥600/800 ≤1.55/5A 55/5A ≤10 25 ≤1.5 ... Original
datasheet

1 pages,
244.92 Kb

a15 diode 97a6 TEXT
datasheet frame
Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , ) Package 0.6 8 ≥400/600 ≤1.6/0.85A ≤3.5 7 ≤1.5 BT131 BT131 1 16 ≥500/600 ≤1.6/2A ≤3 7 ≤1.5 TO-92 BT134 BT134 4 25 ≥600 ≤1.7/5A ≤5 10 ≤1.5 TO-220 97A6 TO-92 BT136 BT136 80 YUNTAI RD,PUDONG AREA, SHANGHAI,P.R.CHINA , ‰¤1.7/5A ≤10 25 ≤1.5 TO-220 8 65 ≥600 ≤1.65/10A 65/10A ≤10 25 ≤1.5 ... Original
datasheet

1 pages,
237.19 Kb

transistor A16 97a6 TEXT
datasheet frame
Abstract: 350 V VGE = ±15 V IC = 249 A Diode Figure 7 Typical reverse recovery energy loss as a , ±15 V IC = 249 A Diode Figure 11 Typical reverse recovery time as a function of , ZthJH = f(tp) 25/125 350 249 ±15 4 6 8 R gon (W) 10 °C V A V Diode , With an inductive load at Tj = 125 °C VCE = 350 V VGE = ±15 V IC = 251 A Diode , Temperature Tj=Tjmax Tj≤150°C VGE=15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC ... Vincotech
Original
datasheet

24 pages,
1806.92 Kb

F206NIA300SA-M106F TEXT
datasheet frame
Abstract: ±15 8 12 R gon (W) 16 20 °C V A V Diode Figure 20 Diode transient , ±15 8 12 R gon (W) 16 °C V A V Diode Figure 20 Diode transient thermal , =15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF , Tjmax Tc=100°C 240 A Power dissipation per Diode Ptot Tj=Tjmax Th=80°C Tc , =80°C Tc=80°C Tjmax Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current VRRM ... Vincotech
Original
datasheet

24 pages,
1779.47 Kb

F206NIA200SG-M105F25 TEXT
datasheet frame
Abstract: = 600 V; IC = 35 A VGE = ±15 V; RG = 15 Ω ns ns ns ns mJ mJ A Âus Internal diode - diagram see Fig. 18 Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 â , of series diode monolithically integrated, no external series diode required - soft reverse , Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) typ. External diode DSEP30 DSEP30 , 25 50 Fig. 3 Typical transfer characteristics 350 VCE = 600 V VGE = ±15 V 12 3 ... IXYS
Original
datasheet

5 pages,
104.31 Kb

40N120 TEXT
datasheet frame
Abstract: =80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc=80°C tp limited by IF ,  Rgon=16 ȍ f=1MHz ȍ ns ±15 600 25 131 ±15 600 25 15 ±15 600 25 233 ±15 600 25 92 ±15 600 25 1,35 ±15 0 600 25 25 1,76 ... Vincotech
Original
datasheet

11 pages,
259.24 Kb

V23990-P629-FXX-PM V23990-P629-F46-01-14 TEXT
datasheet frame
Abstract: Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward , per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc , ±15 600 25 131 ±15 600 25 15 ±15 600 25 233 ±15 600 25 92 ±15 600 25 1,35 ±15 0 600 25 25 1,76 2,02 ns ns ns mWs mWs nF , thickness=76um RthJH V Kunze foil KU ALF5 Wärmewiderstand Chip-Kühlkörper pro Chip Diode ... Vincotech
Original
datasheet

11 pages,
283.2 Kb

V23990-P629-F56-PM V23990-P629-F56-01-14 TEXT
datasheet frame
Abstract: > Transistor(pair) Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series MOSFETs Unidirectional SCR Silicon Controlled Rectifiers with , ‰¥500/650 ≤1.75/23A 75/23A 2-8 ≤1.5 TO-220 SHANGHAI,P.R.CHINA BT152 BT152 8 12 160 ≥500/650 ≤1.75/35A 75/35A 2-8 ≤1.5 TO-220 TEL:+86-21-69919530 TYN616 TYN616 12 10 190 ≥600/800/1000 ≤1.60/32A 60/32A 3-15 ≤1.5 TO-220 FAX:+86-21-58341568 S8020R S8020R 16 13 ... Original
datasheet

1 pages,
226.81 Kb

TO-92 C106 TEXT
datasheet frame
Abstract: Unit 1200 V Halfbridge IGBT Inverse Diode Repetitive peak reverse voltage VRRM Forward current per diode IFAV DC current Th=80° C Tc=80° C 14 19 A Repetitive peak , ° C Power dissipation per Diode Maximum Junction Temperature Ptot Halfbridge IGBT , Diode Peak Repetitive Reverse Voltage DC forward current Power dissipation per Diode Maximum , 31 46 A 140 A 61 92 W 150 ° C Tj≤150° C VGE=15V NP Inverse Diode ... Vincotech
Original
datasheet

26 pages,
2939.76 Kb

NF D 21-511 10-FY12NMA160SH01-M820F18 10-PY12NMA160SH01-M820F18Y TEXT
datasheet frame
Abstract: Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward , per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc , š Rgoff=16 Κ Rgon=16 Κ f=1MHz Κ ns ±15 600 25 128 ±15 600 25 13 ±15 600 25 224 ±15 600 25 79 ±15 600 25 1,7 ±15 0 600 25 25 , Diode H-bridge Diode H-Brücke Diode forward voltage VF Durchlaßspannung Peak reverse recovery ... Vincotech
Original
datasheet

11 pages,
298.63 Kb

V23990-P629-FXX-PM V23990-P629-F54-01-14 TEXT
datasheet frame

Archived Files

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No abstract text available
/download/34452206-198327ZC/960hxpga.zip ()
Intel 13/01/1997 58.74 Kb ZIP 960hxpga.zip
No abstract text available
/download/27395636-198335ZC/960hxpq2.zip ()
Intel 13/01/1997 58.55 Kb ZIP 960hxpq2.zip
ST | LOW CAPACITANCE DIODE ARRAY Datasheet LOW CAPACITANCE DIODE ARRAY DALC208SC6 DALC208SC6 Document Format WITH THE FOLLOWING STANDARDS : PROTECTION OF 4 LINES PEAK REVERSE VOLTAGE: V RRM = 9 V per diode VERY LOW CAPACITANCE PER DIODE: C < 5 pF VERY LOW LEAKAGE CURRENT: I R < 1 m A FEATURES SOT23-6L (SC74) FUNCTIONAL DIAGRAM I/O 1 I/O 2 I/O 3 I/O 4 REF 2 REF 1 LOW CAPACITANCE DIODE ARRAY Application Specific
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6477.htm
STMicroelectronics 20/10/2000 17.17 Kb HTM 6477.htm
ST | LOW CAPACITANCE DIODE ARRAY Datasheet LOW CAPACITANCE DIODE ARRAY DALC208SC6 DALC208SC6 Document Format 9 V per diode n VERY LOW CAPACITANCE PER DIODE: C < 5 pF n VERY LOW LEAKAGE CURRENT: I R < 1 m CAPACITANCE DIODE ARRAY Application Specific Discretes A.S.D. TM Where ESD and/or over and undershoot APPLICATIONS The DALC208SC6 DALC208SC6 diode array is designed to protect components which are connected to data and
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6477-v3.htm
STMicroelectronics 19/01/2001 16.05 Kb HTM 6477-v3.htm
No abstract text available
/download/10315627-173553ZC/400bvibs.zip ()
Intel 08/10/1996 32.08 Kb ZIP 400bvibs.zip
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/download/89524519-267602ZC/200bvibs.zip ()
Intel 08/10/1996 32.12 Kb ZIP 200bvibs.zip
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/download/97123420-267638ZC/400bvibs.zip ()
Intel 08/10/1996 32.08 Kb ZIP 400bvibs.zip
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/download/87851494-267577ZC/16scibis.zip ()
Intel 08/10/1996 45.12 Kb ZIP 16scibis.zip
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/download/59317094-267547ZC/04scibis.zip ()
Intel 08/10/1996 45.17 Kb ZIP 04scibis.zip
No abstract text available
/download/3324306-173382ZC/04scibis.zip ()
Intel 08/10/1996 45.17 Kb ZIP 04scibis.zip