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diode a15

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , :+86-21-58341568 Transistor(pair) Part No. MAC VGT (V) Package 7 ≤1.5 ≤3 7 ≤1.5 TO-92 ≤5 10 ≤1.5 TO-220 ≤1.7/5A ≤10 25 ≤1.5 TO-220 ≤1.65/10A ≤10 25 ≤1.5 TO-220 ≤1.65/15A ≤25 50 ≤1.5 TO-220 ≥600/800 ≤1.55/20A ≤25 50 ≤1.5 TO-220 35 ≥600/800 ≤1.55/5A ≤10 25 ≤1.5 -
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DIODE A16 97a6 transistor A16 a15 diode BT131 BT134 BT136 BT137 BT138
Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , ) Package 0.6 8 ≥400/600 ≤1.6/0.85A ≤3.5 7 ≤1.5 BT131 1 16 ≥500/600 ≤1.6/2A ≤3 7 ≤1.5 TO-92 BT134 4 25 ≥600 ≤1.7/5A ≤5 10 ≤1.5 TO-220 97A6 TO-92 BT136 80 YUNTAI RD,PUDONG AREA, SHANGHAI,P.R.CHINA , ‰¤1.7/5A ≤10 25 ≤1.5 TO-220 8 65 ≥600 ≤1.65/10A ≤10 25 ≤1.5 -
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BT139 BTB04 BTA06 BTA08 BTA10/BTB10 BTA12/BTB12
Abstract: 350 V VGE = ±15 V IC = 249 A Diode Figure 7 Typical reverse recovery energy loss as a , ±15 V IC = 249 A Diode Figure 11 Typical reverse recovery time as a function of , ZthJH = f(tp) 25/125 350 249 ±15 4 6 8 R gon (W) 10 °C V A V Diode , With an inductive load at Tj = 125 °C VCE = 350 V VGE = ±15 V IC = 251 A Diode , Temperature Tj=Tjmax Tj≤150°C VGE=15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC Vincotech
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F206NIA F206NIA300SA-M106F F206NIA300SA
Abstract: ±15 8 12 R gon (W) 16 20 °C V A V Diode Figure 20 Diode transient , ±15 8 12 R gon (W) 16 °C V A V Diode Figure 20 Diode transient thermal , =15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF , Tjmax Tc=100°C 240 A Power dissipation per Diode Ptot Tj=Tjmax Th=80°C Tc , =80°C Tc=80°C Tjmax Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current VRRM Vincotech
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F206NIA200SG-M105F25 F206NIA200SG
Abstract: = 600 V; IC = 35 A VGE = ±15 V; RG = 15 â"¦ ns ns ns ns mJ mJ A Âus Internal diode - diagram see Fig. 18 Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 â , of series diode monolithically integrated, no external series diode required - soft reverse , Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) typ. External diode DSEP30 , 25 50 Fig. 3 Typical transfer characteristics 350 VCE = 600 V VGE = ±15 V 12 3 IXYS
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40N120 IXRH40N120
Abstract: =80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc=80°C tp limited by IF , Rgon=16 È f=1MHz È ns ±15 600 25 131 ±15 600 25 15 ±15 600 25 233 ±15 600 25 92 ±15 600 25 1,35 ±15 0 600 25 25 1,76 Vincotech
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V23990-P629-FXX-PM V23990-P629-F46-01-14 P629-F46 IRRM10 IRRM90 IRRM100
Abstract: Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward , per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc , ±15 600 25 131 ±15 600 25 15 ±15 600 25 233 ±15 600 25 92 ±15 600 25 1,35 ±15 0 600 25 25 1,76 2,02 ns ns ns mWs mWs nF , thickness=76um RthJH V Kunze foil KU ALF5 Wärmewiderstand Chip-Kühlkörper pro Chip Diode Vincotech
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V23990-P629-F56-PM V23990-P629-F56-01-14 P629-F56 V23990-P629F56
Abstract: > Transistor(pair) Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series MOSFETs Unidirectional SCR Silicon Controlled Rectifiers with , ‰¥500/650 ≤1.75/23A 2-8 ≤1.5 TO-220 SHANGHAI,P.R.CHINA BT152 8 12 160 ≥500/650 ≤1.75/35A 2-8 ≤1.5 TO-220 TEL:+86-21-69919530 TYN616 12 10 190 ≥600/800/1000 ≤1.60/32A 3-15 ≤1.5 TO-220 FAX:+86-21-58341568 S8020R 16 13 -
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c106 1006 TO-92 C106 X0405 80/8A X0409 TS820 60/16A BT151
Abstract: Unit 1200 V Halfbridge IGBT Inverse Diode Repetitive peak reverse voltage VRRM Forward current per diode IFAV DC current Th=80° C Tc=80° C 14 19 A Repetitive peak , ° C Power dissipation per Diode Maximum Junction Temperature Ptot Halfbridge IGBT , Diode Peak Repetitive Reverse Voltage DC forward current Power dissipation per Diode Maximum , 31 46 A 140 A 61 92 W 150 ° C Tj≤150° C VGE=15V NP Inverse Diode Vincotech
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10-FY12NMA160SH01-M820F18 NF D 21-511 10-PY12NMA160SH01-M820F18Y M820-F M820-FY
Abstract: Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward , per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc , š Rgoff=16 Κ Rgon=16 Κ f=1MHz Κ ns ±15 600 25 128 ±15 600 25 13 ±15 600 25 224 ±15 600 25 79 ±15 600 25 1,7 ±15 0 600 25 25 , Diode H-bridge Diode H-Brücke Diode forward voltage VF DurchlaÃspannung Peak reverse recovery Vincotech
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V23990-P629-F54-01-14 P629-F54 V23990-P629F54
Abstract: 27 A 75 A 67 W Input Rectifier Diode Peak repetitive reverse voltage VRRM IFAV , I2t-value I2t Power dissipation per diode Ptot Maximum junction temperature Tj=Tjmax Th , Symbol Value Unit 1200 V 21 A 50 A 37 W 175 °C Inverter Diode , peak forward current IFRM tp limited by Tjmax Power dissipation per diode Ptot Tj=Tjmax , °C Brc Diode Peak repetitive reverse voltage DC forward current 1200 VRRM IF Tj=Tjmax Vincotech
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V23990-P589-A31-PM
Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , -220 TEL:+86-21-69919530 BT151 ã'' 7.5 120 ≥500/650 ≤1.75/23A 2-8 ≤1.5 TO-220 FAX:+86-21-58341568 BT152 8 12 160 ≥500/650 ≤1.75/35A 2-8 ≤1.5 TO-220 TYN616 12 10 190 ≥600/800/1000 ≤1.60/32A 3-15 ≤1.5 TO-220 S8020R 16 13 255 ≥600/800 ≤1.60/41A 5-35 ≤1.5 TO-220 E-mail: sales@thinkisemi.com ã -
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TO202 package transistors C106 S8025R 60/50A S8040R 80/80A
Abstract: Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , BT151 ã'' 7.5 120 ≥500/650 ≤1.75/23A 2-8 ≤1.5 TO-220 FAX:+86-21-58341568 BT152 8 12 160 ≥500/650 ≤1.75/35A 2-8 ≤1.5 TO-220 Contact Us , ≤1.5 TO-220 S8020R 16 13 255 ≥600/800 ≤1.60/41A 5-35 ≤1.5 TO-220 S8025R 16 16 310 ≥600/800 ≤1.60/50A 5-40 ≤1.5 TO-220 S8040R 20 25 -
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100-6 scr Transistor 2p4m
Abstract: 600 V VGE = ±15 V 3 V Fig. 20 Typ. forward characteristics of free wheeling diode 4 , ) min. typ. max. (per diode) IXYS reserves the right to change limits, test conditions and , °C 52 36 A A ICM VCEK RBSOA; VGE = ±15 V; RG = 39 â"¦; TVJ = 125°C Clamped inductive load; L = 100 ÂuH 70 VCES A tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 39 â"¦; TVJ = 125 , - D16 Rectifier Diode (typ. at TJ = 125°C) V0 = 0.83 V; R0 = 11 mâ"¦ Free Wheeling Diode (typ IXYS
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MUBW3512E7
Abstract: Diode Repetitive peak reverse voltage VRRM IF Tj=Tjmax Maximum repetitive forward current IFRM Power dissipation per Diode Ptot Maximum Junction Temperature Th=80° C Tc=80° C , Reverse Voltage VRRM DC forward current IF Tj=Tjmax Diode maximum forward current IFM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Th=80° C Maximum , Point Inverse Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Maximum Vincotech
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30-FT12NMA200SH-M660F08 30-FT12NMA200S M660F08
Abstract: specified C, Parameter Condition Symbol Value Unit 600 V Buck & Boost Inv. Diode , =80° C Tc=80° C tp limited by Tjmax Forward current per diode Tj=25° C IFRM 20 A , I2t Power dissipation per Diode Ptot Maximum Junction Temperature 15 Tj=Tjmax Th , Creepage distance min 12,7 mm Clearance min 12,7 mm Buck Diode Peak Repetitive Reverse , Non-repetitive Peak Surge Current IFSM 60Hz Single Half-Sine Wave Power dissipation per Diode Ptot Vincotech
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10-FZ06NRA060FU-P967F08 10-PZ06NRA060FU-P967F08Y 10-PZ06NRA06 P967F08 P967F08Y
Abstract: Diode Repetitive peak reverse voltage VRRM Th=80° C Tc=80° C 17 IF Tj=Tjmax IFRM tp=10ms 14 A I2t-value I2t Tj=Tjmax 40 A 2s Power dissipation per Diode , dissipation per Diode Th=80° C Maximum Junction Temperature Th=80° C C Tc=80° Neutral Point , =15V Neutral Point Inverse Diode Peak Repetitive Reverse Voltage DC forward current Maximum repetitive forward current Power dissipation per Diode Maximum Junction Temperature IF IFRM Ptot Tj=Tjmax Vincotech
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30-FT12NMA160SH-M669F08 M669F08
Abstract: 25°C, unless otherwise specified) min. typ. max. (per diode) IXYS reserves the right to , TC = 25°C TC = 80°C 52 36 A A ICM VCEK RBSOA; VGE = ±15 V; RG = 39 â"¦; TVJ = 125°C Clamped inductive load; L = 100 ÂuH 70 VCES A tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 39 , °C TVJ = 125°C IF = 30 A; diF/dt = -1100 A/Âus; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.37 V; R0 = 62 mâ"¦ Free Wheeling Diode (typ. at IXYS
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T 3512 H diode E72873
Abstract: area Buck Diode Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current IFRM tp limited by Tjmax Tc=100°C 450 A Power dissipation per Diode Ptot , off safe operating area Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current , dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Boost Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Th=80°C Tc Vincotech
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10-F106NIA150SA-M136F M136F
Abstract: Temperature Tj=Tjmax Tj≤150°C VGE=15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC , Diode Ptot Tj=Tjmax Th=80°C Tc=80°C 158 239 W 175 °C Maximum Junction , Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Boost Inverse Diode Peak Repetitive , =80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Boost Diode Peak Repetitive Vincotech
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F206NIA200SA-M105F F206NIA200SA
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