500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
WM8255SEFL Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
WM8255SEFL/R Cirrus Logic IC 12MSPS 16 BIT AFE WITH LED DR visit Digikey Buy
CDB4352 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz DAC w/LD visit Digikey Buy

diode a15

Catalog Datasheet MFG & Type PDF Document Tags

DIODE A16

Abstract: 97a6 Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , :+86-21-58341568 Transistor(pair) Part No. MAC VGT (V) Package 7 ≤1.5 ≤3 7 ≤1.5 TO-92 ≤5 10 ≤1.5 TO-220 ≤1.7/5A ≤10 25 ≤1.5 TO-220 ≤1.65/10A ≤10 25 ≤1.5 TO-220 ≤1.65/15A ≤25 50 ≤1.5 TO-220 ≥600/800 ≤1.55/20A ≤25 50 ≤1.5 TO-220 35 ≥600/800 ≤1.55/5A ≤10 25 ≤1.5
-
Original
DIODE A16 97a6 transistor A16 a15 diode BT131 BT134 BT136 BT137 BT138

97a6

Abstract: transistor A16 Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , ) Package 0.6 8 ≥400/600 ≤1.6/0.85A ≤3.5 7 ≤1.5 BT131 1 16 ≥500/600 ≤1.6/2A ≤3 7 ≤1.5 TO-92 BT134 4 25 ≥600 ≤1.7/5A ≤5 10 ≤1.5 TO-220 97A6 TO-92 BT136 80 YUNTAI RD,PUDONG AREA, SHANGHAI,P.R.CHINA , ‰¤1.7/5A ≤10 25 ≤1.5 TO-220 8 65 ≥600 ≤1.65/10A ≤10 25 ≤1.5
-
Original
BT139 BTB04 BTA06 BTA08 BTA10/BTB10 BTA12/BTB12

F206NIA

Abstract: 350 V VGE = ±15 V IC = 249 A Diode Figure 7 Typical reverse recovery energy loss as a , ±15 V IC = 249 A Diode Figure 11 Typical reverse recovery time as a function of , ZthJH = f(tp) 25/125 350 249 ±15 4 6 8 R gon (W) 10 °C V A V Diode , With an inductive load at Tj = 125 °C VCE = 350 V VGE = ±15 V IC = 251 A Diode , Temperature Tj=Tjmax Tj≤150°C VGE=15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC
Vincotech
Original
F206NIA F206NIA300SA-M106F F206NIA300SA

Solar Inverters

Abstract: ±15 8 12 R gon (W) 16 20 °C V A V Diode Figure 20 Diode transient , ±15 8 12 R gon (W) 16 °C V A V Diode Figure 20 Diode transient thermal , =15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC forward current VRRM Tj=25°C IF , Tjmax Tc=100°C 240 A Power dissipation per Diode Ptot Tj=Tjmax Th=80°C Tc , =80°C Tc=80°C Tjmax Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current VRRM
Vincotech
Original
Solar Inverters F206NIA200SG-M105F25 F206NIA200SG
Abstract: = 600 V; IC = 35 A VGE = ±15 V; RG = 15 â"¦ ns ns ns ns mJ mJ A Âus Internal diode - diagram see Fig. 18 Inductive load, TVJ = 125°C VCE = 600 V; IC = 35 A VGE = ±15 V; RG = 15 â , of series diode monolithically integrated, no external series diode required - soft reverse , Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) typ. External diode DSEP30 , 25 50 Fig. 3 Typical transfer characteristics 350 VCE = 600 V VGE = ±15 V 12 3 IXYS
Original
40N120 IXRH40N120
Abstract: =80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward current Dauergleichstrom Repetitive peak forward current Periodischer Spitzenstrom Power dissipation per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc=80°C tp limited by IF , Rgon=16 È f=1MHz È ns ±15 600 25 131 ±15 600 25 15 ±15 600 25 233 ±15 600 25 92 ±15 600 25 1,35 ±15 0 600 25 25 1,76 Vincotech
Original
V23990-P629-FXX-PM V23990-P629-F46-01-14 P629-F46 IRRM10 IRRM90 IRRM100

V23990-P629-F56-PM

Abstract: Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward , per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc , ±15 600 25 131 ±15 600 25 15 ±15 600 25 233 ±15 600 25 92 ±15 600 25 1,35 ±15 0 600 25 25 1,76 2,02 ns ns ns mWs mWs nF , thickness=76um RthJH V Kunze foil KU ALF5 Wärmewiderstand Chip-Kühlkörper pro Chip Diode
Vincotech
Original
V23990-P629-F56-PM V23990-P629-F56-01-14 P629-F56 V23990-P629F56

TYN616

Abstract: c106 1006 > Transistor(pair) Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS Package Series MOSFETs Unidirectional SCR Silicon Controlled Rectifiers with , ‰¥500/650 ≤1.75/23A 2-8 ≤1.5 TO-220 SHANGHAI,P.R.CHINA BT152 8 12 160 ≥500/650 ≤1.75/35A 2-8 ≤1.5 TO-220 TEL:+86-21-69919530 TYN616 12 10 190 ≥600/800/1000 ≤1.60/32A 3-15 ≤1.5 TO-220 FAX:+86-21-58341568 S8020R 16 13
-
Original
c106 1006 TO-92 C106 X0405 80/8A X0409 TS820 60/16A BT151

10-FY12NMA160SH01-M820F18

Abstract: NF D 21-511 Unit 1200 V Halfbridge IGBT Inverse Diode Repetitive peak reverse voltage VRRM Forward current per diode IFAV DC current Th=80° C Tc=80° C 14 19 A Repetitive peak , ° C Power dissipation per Diode Maximum Junction Temperature Ptot Halfbridge IGBT , Diode Peak Repetitive Reverse Voltage DC forward current Power dissipation per Diode Maximum , 31 46 A 140 A 61 92 W 150 ° C Tj≤150° C VGE=15V NP Inverse Diode
Vincotech
Original
10-FY12NMA160SH01-M820F18 NF D 21-511 10-PY12NMA160SH01-M820F18Y M820-F M820-FY
Abstract: Th=80°C Tc=80°C Tj=Tjmax VGE=15V VCC=360V Diode H-bridge Diode H-Brücke DC forward , per Diode Verlustleistung pro Diode max. Chip temperature max. Chiptemperatur Th=80°C, Tc , š Rgoff=16 Κ Rgon=16 Κ f=1MHz Κ ns ±15 600 25 128 ±15 600 25 13 ±15 600 25 224 ±15 600 25 79 ±15 600 25 1,7 ±15 0 600 25 25 , Diode H-bridge Diode H-Brücke Diode forward voltage VF DurchlaÃspannung Peak reverse recovery Vincotech
Original
V23990-P629-F54-01-14 P629-F54 V23990-P629F54
Abstract: 27 A 75 A 67 W Input Rectifier Diode Peak repetitive reverse voltage VRRM IFAV , I2t-value I2t Power dissipation per diode Ptot Maximum junction temperature Tj=Tjmax Th , Symbol Value Unit 1200 V 21 A 50 A 37 W 175 °C Inverter Diode , peak forward current IFRM tp limited by Tjmax Power dissipation per diode Ptot Tj=Tjmax , °C Brc Diode Peak repetitive reverse voltage DC forward current 1200 VRRM IF Tj=Tjmax Vincotech
Original
V23990-P589-A31-PM

TO202 package

Abstract: transistors C106 Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , -220 TEL:+86-21-69919530 BT151 ã'' 7.5 120 ≥500/650 ≤1.75/23A 2-8 ≤1.5 TO-220 FAX:+86-21-58341568 BT152 8 12 160 ≥500/650 ≤1.75/35A 2-8 ≤1.5 TO-220 TYN616 12 10 190 ≥600/800/1000 ≤1.60/32A 3-15 ≤1.5 TO-220 S8020R 16 13 255 ≥600/800 ≤1.60/41A 5-35 ≤1.5 TO-220 E-mail: sales@thinkisemi.com ã
-
Original
TO202 package transistors C106 S8025R 60/50A S8040R 80/80A

TYN616

Abstract: 100-6 scr Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS , BT151 ã'' 7.5 120 ≥500/650 ≤1.75/23A 2-8 ≤1.5 TO-220 FAX:+86-21-58341568 BT152 8 12 160 ≥500/650 ≤1.75/35A 2-8 ≤1.5 TO-220 Contact Us , ≤1.5 TO-220 S8020R 16 13 255 ≥600/800 ≤1.60/41A 5-35 ≤1.5 TO-220 S8025R 16 16 310 ≥600/800 ≤1.60/50A 5-40 ≤1.5 TO-220 S8040R 20 25
-
Original
100-6 scr SCR 2P4M Transistor 2p4m
Abstract: 600 V VGE = ±15 V 3 V Fig. 20 Typ. forward characteristics of free wheeling diode 4 , ) min. typ. max. (per diode) IXYS reserves the right to change limits, test conditions and , °C 52 36 A A ICM VCEK RBSOA; VGE = ±15 V; RG = 39 â"¦; TVJ = 125°C Clamped inductive load; L = 100 ÂuH 70 VCES A tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 39 â"¦; TVJ = 125 , - D16 Rectifier Diode (typ. at TJ = 125°C) V0 = 0.83 V; R0 = 11 mâ"¦ Free Wheeling Diode (typ IXYS
Original
MUBW3512E7
Abstract: Diode Repetitive peak reverse voltage VRRM IF Tj=Tjmax Maximum repetitive forward current IFRM Power dissipation per Diode Ptot Maximum Junction Temperature Th=80° C Tc=80° C , Reverse Voltage VRRM DC forward current IF Tj=Tjmax Diode maximum forward current IFM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Th=80° C Maximum , Point Inverse Diode Peak Repetitive Reverse Voltage DC forward current IF Tj=Tjmax Maximum Vincotech
Original
30-FT12NMA200SH-M660F08 30-FT12NMA200S M660F08
Abstract: specified C, Parameter Condition Symbol Value Unit 600 V Buck & Boost Inv. Diode , =80° C Tc=80° C tp limited by Tjmax Forward current per diode Tj=25° C IFRM 20 A , I2t Power dissipation per Diode Ptot Maximum Junction Temperature 15 Tj=Tjmax Th , Creepage distance min 12,7 mm Clearance min 12,7 mm Buck Diode Peak Repetitive Reverse , Non-repetitive Peak Surge Current IFSM 60Hz Single Half-Sine Wave Power dissipation per Diode Ptot Vincotech
Original
10-FZ06NRA060FU-P967F08 10-PZ06NRA060FU-P967F08Y 10-PZ06NRA06 P967F08 P967F08Y
Abstract: Diode Repetitive peak reverse voltage VRRM Th=80° C Tc=80° C 17 IF Tj=Tjmax IFRM tp=10ms 14 A I2t-value I2t Tj=Tjmax 40 A 2s Power dissipation per Diode , dissipation per Diode Th=80° C Maximum Junction Temperature Th=80° C C Tc=80° Neutral Point , =15V Neutral Point Inverse Diode Peak Repetitive Reverse Voltage DC forward current Maximum repetitive forward current Power dissipation per Diode Maximum Junction Temperature IF IFRM Ptot Tj=Tjmax Vincotech
Original
30-FT12NMA160SH-M669F08 M669F08

T 3512 H diode

Abstract: 25°C, unless otherwise specified) min. typ. max. (per diode) IXYS reserves the right to , TC = 25°C TC = 80°C 52 36 A A ICM VCEK RBSOA; VGE = ±15 V; RG = 39 â"¦; TVJ = 125°C Clamped inductive load; L = 100 ÂuH 70 VCES A tSC (SCSOA) VCE = 900 V; VGE = ±15 V; RG = 39 , °C TVJ = 125°C IF = 30 A; diF/dt = -1100 A/Âus; TVJ = 125°C VR = 600 V; VGE = 0 V (per diode) T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.37 V; R0 = 62 mâ"¦ Free Wheeling Diode (typ. at
IXYS
Original
T 3512 H diode E72873

Solar Inverters

Abstract: area Buck Diode Peak Repetitive Reverse Voltage DC forward current Repetitive peak forward current IFRM tp limited by Tjmax Tc=100°C 450 A Power dissipation per Diode Ptot , off safe operating area Boost Inverse Diode Peak Repetitive Reverse Voltage DC forward current , dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Boost Diode Peak Repetitive Reverse Voltage DC forward current VRRM IF Tj=25°C Th=80°C Tc
Vincotech
Original
10-F106NIA150SA-M136F M136F

Solar Inverters

Abstract: Temperature Tj=Tjmax Tj≤150°C VGE=15V Tjmax Buck Diode Peak Repetitive Reverse Voltage DC , Diode Ptot Tj=Tjmax Th=80°C Tc=80°C 158 239 W 175 °C Maximum Junction , Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Boost Inverse Diode Peak Repetitive , =80°C Repetitive peak forward current IFRM tp limited by Tjmax Power dissipation per Diode Ptot Tj=Tjmax Maximum Junction Temperature Th=80°C Tc=80°C Tjmax Boost Diode Peak Repetitive
Vincotech
Original
F206NIA200SA-M105F F206NIA200SA
Showing first 20 results.