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diode TA 20-08

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diode TA 20-08

Abstract: P-channel Trench MOSFET Schottky Diode ELECTRICAL CHARACTERISTICS (TA=25 Unless otherwise noted) Parameter Symbol , SPC4703 P-Channel Trench MOSFET with Schottky Diode DESCRIPTION The SPC4703combines the Trench , minimize on-state resistance and provide superior switching performance. The Schottky diode is provided , SPC4703 P-Channel Trench MOSFET with Schottky Diode PIN DESCRIPTION Pin Symbol Description 1 , SPC4703 SPC4703DF8RGB : Tape Reel ; Pb ­ Free ; Halogen ­ Free ABSOULTE MAXIMUM RATINGS (TA
SYNC Power
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diode TA 20-08 P-channel Trench MOSFET MOSFET with Schottky Diode schottky diode 100A DIODE marking 8L MOSFET 20V 100A

SLUA271

Abstract: diode TA 20-08 Typical values for TA = 25°C IF: Forward current applied to bootstrap diode. IREV: Reverse current applied , On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay , of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side , and turn-off of each other. An on-chip bootstrap diode eliminates the external discrete diodes , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA =
Texas Instruments
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SLUA271 UCC27200-Q1 UCC27201-Q1 SLUS822A UCC27200/1
Abstract: Typical values for TA = 25°C IF: Forward current applied to bootstrap diode. IREV: Reverse current applied , On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay , of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side , and turn-off of each other. An on-chip bootstrap diode eliminates the external discrete diodes , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA = Texas Instruments
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UCC27201QDDARQ1

Abstract: UCC27200 diode turn-off time (1) (2) 20 ns Typical values for TA = 25°C IF: Forward current applied , VLO, VHO - Output Voltage - V TA - Temperature - oC Figure 18. Figure 19. DIODE CURRENT , Voltage 120 V · Maximum VDD Voltage 20 V · On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 , include a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control , controlled and matched to 1 ns between the turn-on and turn-off of each other. An on-chip bootstrap diode
Texas Instruments
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UCC27201QDDARQ1 UCC27200 UCC2720x UCC27200QDDARQ1 UCC27201
Abstract: Typical values for TA = 25°C IF: Forward current applied to bootstrap diode. IREV: Reverse current applied , On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay , of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side , and turn-off of each other. An on-chip bootstrap diode eliminates the external discrete diodes , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA = Texas Instruments
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ISO/TS16949

UCC2720x

Abstract: UCC27200 diode turn-off time (1) (2) 20 ns Typical values for TA = 25°C IF: Forward current applied , VLO, VHO - Output Voltage - V TA - Temperature - oC Figure 18. Figure 19. DIODE CURRENT , Voltage 120 V · Maximum VDD Voltage 20 V · On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 , include a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control , controlled and matched to 1 ns between the turn-on and turn-off of each other. An on-chip bootstrap diode
Texas Instruments
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UCC27200-Q1

Abstract: 27201Q Typical values for TA = 25°C IF: Forward current applied to bootstrap diode. IREV: Reverse current applied , On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay , of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side , and turn-off of each other. An on-chip bootstrap diode eliminates the external discrete diodes , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA =
Texas Instruments
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27201Q
Abstract: ns Typical values for TA = 25° C IF: Forward current applied to bootstrap diode. IREV: Reverse , VLO, VHO - Output Voltage - V TA - Temperature - oC Figure 18. Figure 19. DIODE CURRENT , Diode â'¢ Greater than 1 MHz of Operation â'¢ 20-ns Propagation Delay Times â'¢ 3-A Sink, 3-A Source , high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with , . An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided Texas Instruments
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Abstract: = 0.5 A (1) (2) Bootstrap diode turn-off time (1) (2) 20 ns Typical values for TA = , VLO, VHO - Output Voltage - V TA - Temperature - oC Figure 18. Figure 19. DIODE CURRENT , Diode â'¢ Greater than 1 MHz of Operation â'¢ 20-ns Propagation Delay Times â'¢ 3-A Sink, 3-A Source , high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with , . An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided Texas Instruments
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diode TA 20-08

Abstract: Typical values for TA = 25°C IF: Forward current applied to bootstrap diode. IREV: Reverse current applied , On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay , of high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side , and turn-off of each other. An on-chip bootstrap diode eliminates the external discrete diodes , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA =
Texas Instruments
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Abstract: = 0.5 A (1) (2) Bootstrap diode turn-off time (1) (2) 20 ns Typical values for TA = , VLO, VHO - Output Voltage - V TA - Temperature - oC Figure 18. Figure 19. DIODE CURRENT , Diode â'¢ Greater than 1 MHz of Operation â'¢ 20-ns Propagation Delay Times â'¢ 3-A Sink, 3-A Source , high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with , . An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided Texas Instruments
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A1HB

Abstract: UCC27200 diode turn-off time (1) (2) 20 ns Typical values for TA = 25°C IF: Forward current applied , VLO, VHO - Output Voltage - V TA - Temperature - oC Figure 18. Figure 19. DIODE CURRENT , Voltage 120 V · Maximum VDD Voltage 20 V · On-Chip 0.65-V VF, 0.6- RD Bootstrap Diode · Greater than 1 , include a 120-V bootstrap diode and high-side/low-side driver with independent inputs for maximum control , controlled and matched to 1 ns between the turn-on and turn-off of each other. An on-chip bootstrap diode
Texas Instruments
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A1HB
Abstract: , 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay Times · 3-A Sink , high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with , . An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA = , power dissipation at ambient temperature: PD = (150 ­ TA)/JA (unless otherwise noted) PACKAGE DDA (1 Texas Instruments
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SLUS822
Abstract: , 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay Times · 3-A Sink , high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with , . An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA = , power dissipation at ambient temperature: PD = (150 ­ TA)/JA (unless otherwise noted) PACKAGE DDA (1 Texas Instruments
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smd glass zener diode color codes

Abstract: 2l TRANSISTOR SMD MARKING CODE . Diode Zener Diodes 1. Zener Diode Characteristics Generally, when a junction is reverse biased , Characteristics A typical zener diode voltage-current characteristic is shown in figure 1.1. There are , area I z Figure 1.1 Zener Diode Voltage-Current Characteristics 1.1.1 Forward Biased Area The forward characteristics of a zener diode are essentially identical with an ordinary rectifier (figure 1.2). The voltagecurrent curve follows the basic diode equation. 10­2 Example of HZ6B2 10­4
Renesas Technology
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smd glass zener diode color codes 2l TRANSISTOR SMD MARKING CODE smd zener color codes smd zener diode color code zener diodes color coded smd zener diode 5v REJ27G0012-0300/R
Abstract: , 0.6- RD Bootstrap Diode · Greater than 1 MHz of Operation · 20-ns Propagation Delay Times · 3-A Sink , high-frequency N-channel MOSFET drivers include a 120-V bootstrap diode and high-side/low-side driver with , . An on-chip bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided , ­5 V to 120 V ­0.3 V to 120 V ­0.3 V to 20 V ­40°C to 150°C ­65°C to 150°C Soldering, 10 seconds TA = , power dissipation at ambient temperature: PD = (150 ­ TA)/JA (unless otherwise noted) PACKAGE DDA (1 Texas Instruments
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Abstract: diode, which should be connected to the node requiring transient voltage protection. The anode of the , -08DE ELECTRICAL OPERATING CHARACTERISTICS (NOTE 1) SYMBOL PARAMETER CONDITIONS MIN TYP MAX TA = 25°C, 0VDC, 1MHz; Note 2 Î"CIN Differential Channel I/O to GND Capacitance TA = 25°C, 2.5VDC, 1MHz; Note 2 VRSO Reverse Stand-off Voltage IR=10μA, TA = 25°C 5.5 V IR=1mA, TA = 25°C 6.1 V 0VDC, 1MHz 7 pF 15 0.19 pF pF VSIG VESD RD Small California Micro Devices
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CM1248-08DE MO-229C

N P CHANNEL dual POWER MOSFET

Abstract: marking code dual gate mos Mode MOSFET 8.5A for N Channel / -7.2A for P Channl ABSOULTE MAXIMUM RATINGS (Ta = 25 unless , VGSS +/-20 V ID A IDM -7.2 -5.6 -20 Continuous Source Current (Diode Conduction , Current (Diode Conduction) IS 2.3 A Power Dissipation PD W TJ 2.5 1.6 -55/150 , Gate-Source Voltage Continuous Drain Current TA=25 TA=70 Pulsed Drain Current TA=25 TA , Continuous Drain Current TA=25 TA=70 Pulsed Drain Current TA=25 TA=100 Operation Junction
Stanson Technology
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STC4516 STC5416 N P CHANNEL dual POWER MOSFET marking code dual gate mos MOSFET dual SOP-8 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR P channel MOSFET 50A SOP8 mos n STC4516S8RG STC4516S8TG

diode TA 20-08

Abstract: KID65003AP (External) General Purpose KID65002AP/AF Zener Diode 7V+10.5k 14 25V P-MOS KID65003AP/AF , (Ta=25 CHARACTERISTIC , unless otherwise noted) SYMBOL RATING UNIT VCE(SUS) 50 V , Output Sustaining Voltage -0.5 +30 V Clamp Reverse Voltage VR 50 V Diode , ~KID65004AP/AF RECOMMENDED OPERATING CONDITIONS (Ta=-40 85 CHARACTERISTIC ) SYMBOL CONDITION MIN , KID65001AP/AF 0 - 5 mA Clamp Diode Reverse Voltage VR - - 50 V Clamp Diode
KEC
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KID65003AP KID65004AP Zener Diode Glass 50v DIP16 Cu50 probe KID65001AP DIP-16P FLP-16P

TS16949

Abstract: ZXMN3F318DN8 Drain Current VGS=10V; TA=25°C (b) ID 7.3 6 A VGS=10V; TA=70°C (b) 5.9 4.8 VGS=10V; TA=25°C (a) 5.7 4.6 Pulsed Drain Current (c) IDM 33 25 A Continuous Source Current (Body Diode) (b) IS 3.5 3.3 A Pulsed Source Current (Body Diode) (c) ISM 33 25 A Power Dissipation at TA =25°C (a) (d) PD 1.25 10 Linear Derating Factor Operating and Storage Temperature Range Tj, Tstg W 17 PD Power Dissipation at TA =25°C (b) (d
Zetex Semiconductors
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ZXMN3F318DN8 ZXMN3F318DN8TA TS16949 3F318 D-81541 TX75248
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