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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode T B 8A

Catalog Datasheet MFG & Type PDF Document Tags

k08t120

Abstract: k08t12 E = 15V, I C = 8A T j = 25 ° C T j = 12 5 ° C T j = 15 0 ° C Diode forward voltage VF V G E = 0V, I F = 8A T j = 25 ° C T j = 12 5 ° C T j = 15 0 ° C Gate-emitter threshold voltage Zero gate voltage , recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T , recovery current Diode peak rate of fall of reverse recovery current during t b trr Qrr Irrm di r r / d t T , (off) tf Eon Eoff Ets T j = 25 ° C, V C C = 6 00V, I C = 8A , V G E = 0/ 1 5V , RG=81, L 2 ) = 180nH
Infineon Technologies
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diode 8a 600v

Abstract: diode T B 8A FFP08S60S 8A, 600V, STEALTHTM II Diode Electrical Characteristics T Parameter VF 1 C = 25 , Corporation FFP08S60S Rev. B 2 www.fairchildsemi.com FFP08S60S 8A, 600V, STEALTHTM II Diode , FFP08S60S 8A, 600V, STEALTHTM II Diode January 2007 FFP08S60S Features · Stealth recovery , High Reliability · Avalanche Energy Rated · RoHS Compliant tm 8A, 600V, STEALTHTM II Diode The , Fairchild Semiconductor Corporation 3 www.fairchildsemi.com FFP08S60S Rev. B FFP08S60S 8A, 600V
Fairchild Semiconductor
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diode 8a 600v diode T B 8A
Abstract: Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b di r r / d t ns mJ Anti-Parallel Diode Characteristic 1) 2) ns Allowed number of , A Diode peak rate of fall of reverse recovery current during t b di r r / d t - 320 , Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 8A V G , - 13 - A - 420 - A/µs Ets T j = 25° C, V C C = 6 00V, I C = 8A , V G Infineon Technologies
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IKW08T120 BUP305D K08T120 PG-TO-247-3-1 Q67040-S4514

STTA806DI

Abstract: STTA806D : "FREEWHEEL" MODE. SWITCHING TRANSISTOR IL DIODE: TURBOSWITCH "A" VR t T F = 1/T = t/T , t I dI F /dt DIODE Turn-off losses (in the diode) : ta tb V t I RM P3 = , STTA806D(I) ® TURBOSWITCH TM "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO "FREEWHEEL MODE" OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST
STMicroelectronics
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STTA806DI

k08T120

Abstract: A Diode peak rate of fall of reverse recovery current during t b dirr/dt - 420 - , 8A , - 2.3 - µC Diode peak reverse recovery current Irrm d i F /d t= 600A/ µs - 20 - A Diode peak rate of fall of reverse recovery current during t b dirr/dt - , voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C = 8A V G E = 0V , I F = 8 , Total switching energy ns - 0.7 - Ets T j = 25°C , V C C = 60 0 V, I C = 8A , V G E
Infineon Technologies
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PG-TO-247-3
Abstract: VDS=5V, ID=8A 30 VSD Diode Forward Voltage IS=1A,VGS=0V 0.45 IS Maximum , Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 3.5 ns 19 , ) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 , AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary Alpha & Omega Semiconductor
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1E-05

transistor s68

Abstract: s66 transistor 1 t i 1 1 , 0.4 0.8 1.2 1.6 2.0 2.4 DIODE FORWARD VOLTAGE, VFM, (VOLTS) COMMON , 8A lB = 3A _ 'b ' = 1A B = 0 I.5A- lB = 0.2A , 2 lu 200 Ti = 125°C 1 'B 2 = -16A I 1 \ 'S2 = -8A- ft M , Outline Drawing Dimensions Inches Millimeters A 4.449 Max. 113 Max. B 3.661 ± 0.012 93 ± 0.3 C 3.543 , P 0.610 15.5 Q 0.709 18 R 0.354 9 S 0.394 10 T 0.276 7 U 0.177 4.5 V 0.866 22 w 1.063 27 X
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OCR Scan
KS621K40 transistor s68 s66 transistor transistor S67 powerex ks62 KS621K4

aod606

Abstract: AOD606L Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s Maximum Junction-to-Ambient A Steady-State Maximum , =6A Forward Transconductance VDS=5V, ID=8A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous , the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case , On-Resistance VGS=-4.5V, ID=-4A Forward Transconductance VDS=-5V, ID=-8A IS=-1A,VGS=0V Diode Forward Voltage , Electrical Characteristics (T J=25°C unless otherwise noted) 10 VDS=-20V ID=-8A Capacitance (pF) 1200 1000
Alpha & Omega Semiconductor
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AOD606L aod606 AOD606

ULTRAFAST RECTIFIER 16A 600V vf 1.7

Abstract: APT6038BLL (nC) 400 T = 125°C J V = 400V R 350 16A 300 250 8A 200 150 4A 100 50 , Recovery Charge vs. Current Rate of Change 1.2 16A 80 8A 4A 60 40 20 14 T = 125°C J , 600V 8A APT8DQ60K3CT APT8DQ60K3CTG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES · Anti-Parallel Diode -Switchmode Power Supply -Inverters · Free Wheeling Diode -Motor Controllers -Converters -Inverters ·
Advanced Power Technology
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ULTRAFAST RECTIFIER 16A 600V vf 1.7 APT6038BLL

ao4914

Abstract: = 8A (VGS=10V) rectifier combination for use in DC-DC converters. A R DS(ON) , Drain-Source On-Resistance VGS=4.5V, ID=4A Forward Transconductance Diode Forward Voltage VDS=5V, ID=8A IS , AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary Q2(N-Channel) 30V 8A (VGS=10V) RDS(ON) , Dissipation B TA=70° C Junction and Storage Temperature Range Parameter Reverse Voltage Continuous Forward
Alpha & Omega Semiconductor
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Abstract: =10V, VDS=15V, RL=1.8â"¦, RGEN=3â"¦ 19 ns 3.5 ns IF=8A, dI/dt=500A/µs 8 Body Diode , VGS=10V, VDS=5V VGS=10V, ID=8A V 5 gFS Forward Transconductance VSD Diode Forward , Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 Qrr Body Diode Reverse , AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary , charge. The two MOSFETs VDS= 30V make a compact and efficient switch and synchronous ID= 8A (VGS Alpha & Omega Semiconductor
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D608S

Abstract: diode ed 8a -Pulsed ID 70 C b Drain-Source Diode Forward Current a Maximum Power Dissipation a Ta= 25 , 8A VGS =10V 2 S T U/D608S E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted , ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 144 20.0 , 0.6 0.9 1.2 1.5 V S D , B ody Diode F orward V oltage (V ) F igure 7. On-R es is tance vs . G ate-S ource V oltage F igure 8. B ody Diode F orward V oltage V ariation with S ource C
SamHop Microelectronics
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D608S diode ed 8a STU/D608S

transistor 45 f 122

Abstract: AOD606 Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s , ns 13.2 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 18.3 ns nC A: The , maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T , (Note B) 10 ZJA Normalized Transient Thermal Resistance 50 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA
Alpha & Omega Semiconductor
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transistor 45 f 122 NAV70 mj5025

AOD604

Abstract: MJ5025 Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s , ns 13.2 ns 3.5 ns trr Body Diode Reverse Recovery Time IF=8A, dI/dt=100A/µs 22.9 Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs 18.3 ns nC A: The , maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T , Characteristics (T J=25°C unless otherwise noted) 1200 10 VDS=-20V ID=-8A 1000 Capacitance (pF) -VGS
Alpha & Omega Semiconductor
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AOD604 AOD604L

ULTRAFAST RECTIFIER 16A 600V vf 1.7

Abstract: transistor 4242 MAX IF = 16A Forward Voltage TYP IF = 8A VF MIN 053-4242 Rev B Symbol , . Current Rate of Change 1.2 16A 80 8A 4A 60 40 20 14 T = 125°C J V = 400V 16A , 600V 8A APT8DQ60K3 APT8DQ60K3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. ULTRAFAST SOFT RECOVERY RECTIFIER DIODE (K3) PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS · Anti-Parallel Diode -Switchmode Power Supply -Inverters · Free Wheeling Diode -Motor
Advanced Power Technology
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transistor 4242 4242 transistor D 4242 diode 400V 4A PT6038BLL

AOD604

Abstract: complementary MOSFET TO252 Junction-to-Ambient Steady-State Maximum Junction-to-Case B t 10s Maximum Junction-to-Ambient A Steady-State Maximum , =6A Forward Transconductance VDS=5V, ID=8A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous , the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case , ) Figure 13: Power De-rating (Note B) 10 8 6 4 2 0 0 25 50 75 100 125 150 175 T CASE (°C) Figure 14 , are electrically identical. TO-252 D-PAK Features n-channel p-channel -40V VDS (V) = 40V ID = 8A
Alpha & Omega Semiconductor
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complementary MOSFET TO252

k860p3

Abstract: mosfet 600V 600A circuit ISL9K860P3 January 2002 ISL9K860P3 8A, 600V StealthTM Dual Diode General Description The ISL9K860P3 is a StealthTM dual diode optimized for low loss performance in high frequency hard switched , under typical operating conditions. This device is intended for use as a free wheeling or boost diode in , the diode may be operated without the use of additional snubber circuitry. Consider using the StealthTM diode with an SMPS IGBT to provide the most efficient and highest power density design at lower
Fairchild Semiconductor
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k860p3 mosfet 600V 600A circuit TA49409
Abstract: .#2;2.2,#2;#2;2013-12-16 IDP08E65D1 Emitter#2;Controlled#2;Diode#2;Rapid#2;1#2;Series vGE(t) 90% VGE a a 10% VGE b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on , t2 t3 t4 10 t Rev.#2;2.2,#2;#2;2013-12-16 IDP08E65D1 Emitter Controlled Diode Rapid 1 , Diode Rapid#2;Switching#2;Emitter#2;Controlled#2;Diode IDP08E65D1 Emitter#2;Controlled#2;Diode#2;Rapid , Key#2;Performance#2;and#2;Package#2;Parameters Type IDP08E65D1 Vrrm If Vf,#2;Tvj=25°C Tvjmax Marking Package 650V 8A Infineon Technologies
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E08ED1 PG-TO220-2-1
Abstract: § V ds=400V,Vgs=1 0V, nC Id=8A See Fig 6 & Fig 12 © © w Source-Drain Diode Ratings and , A in the MOSFET T j= 2 5 °C ,I s=8A,V gs=0V - ns T j=25°C ,If=8A - nc diF , © L=18mH, Ias=8A, V dd=50V, R G 2 7 i2 , Starting T J=25 °C = © lS < 8A, di/dt < 1 60 A /|is, V D < B V DSS, Starting T j= 2 5 °C D D (D Essentially Independent of Operating Temperature , ( Driver ) T Gate Pulse Period 10V Ipjrt , Body Diode Forward Current Forward Voltage Drop -
OCR Scan
IRF840A

SEC IRF 640

Abstract: Recovery Time - Orr Reverse Recovery Charge - A V T iI=25°C,Is=8A,V gs=0V 370 - ns T j=25°C,If=8A 3.9 - nc diF /dt=100A/ns (1) Repetitive Rating: Pulse Width Limited by M aximum Junction Tem perature (3) lS < 8A, di/dt < 160A /|is, V D < BVDSS, Starting T, =25°C , , T V a in -ftiim a T fcitage FAIRCHILD SEMICONDUCTORâ"¢ [V] Q, , T b tal Gäbe Charge , Pulse Width T Gate Pulse Period 10V Ipjyj, Body Diode Forward Current Forward Voltage
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OCR Scan
SEC IRF 640 IRF840S
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