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Part Manufacturer Description Datasheet BUY
TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; QFN24; Temp Range: 0° to 70° visit Intersil
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments

diode SM 88A

Catalog Datasheet MFG & Type PDF Document Tags

diode SM 88A

Abstract: FQAF11N40 pn-diode in the MOSFET 'SM Pulsed-Source Current ® - - 35 VSD Diode Forward Voltage © - - 1.5 V Tj=25°C, ls=8.8A, VGS=0V trr Reverse Recovery Time - 240 - ns Tj=25°C, lF=11.4A, Vdd=320V diF/dt=100A/(j,s  , Avalanche Current ® 8.8 A Ear Repetitive Avalanche Energy ® 9.0 mJ dv/dt Peak Diode Recovery dv/dt  , 8.8A TO-3PF PAIRCHILD SEMICONDUCTOR tm © 1999 Fairchild Semiconductor Corporation REV. C 1 , Qgd Gate-Drain (Miller) Charge - 12.3 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol
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Abstract: Integral reverse pn-diode in the MOSFET 'sm Pulsed-Source Current © - - 35 v sd Diode Forward Voltage © - - 1.5 V TJ=25°C, ls=8.8A, VGS=0V Reverse Recovery Time , 8.8A ABSOLUTE MAXIMUM RATINGS Symbol â'¢d â'¢d m Value Units Drain-to-Source Voltage , ® 8.8 A Ear Repetitive Avalanche Energy ® 9.0 mJ Peak Diode Recovery dv/dt , ) ^d(off) tf Qg SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 's Min. Continuous -
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diode SM 88A

Abstract: FDS4435BZ_F085 FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A , Temperature Coefficient ID = -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS , = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance , Charge VDD = -15V, ID = -8.8A 20 ns ns 48 ns 22 ns 28 Fall Time VDD =
Fairchild Semiconductor
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diode SM 88A FDS4435BZ_F085 FDS4435BZ-F085

diode SM 88A

Abstract: FDS4435BZ FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A , -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S
Fairchild Semiconductor
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Abstract: FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Â" Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Â" Max rDS(on) = 35m: at VGS = -4.5V, ID , to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S Dynamic Fairchild Semiconductor
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Abstract: junction rectifier. / flâ'" 'SM Pulsed Source Current (Body Diode) © ALL â'" â'" 35 A Vs d Diode Forward Voltage © ALL - - 1.8 V T j » 25°C, lS - 8.8A, VeS = , high transconductance; superior reverse energy and diode recovery dv/dt capability. IRFP440 V DS R DS(on) 'd 500V 0.850 8.8A They are well suited for applications such as switching , . 450V 0.850 8.8A 500V 1.10 7.7A IRFP443 T he H E X FE T transistors also feature all -
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IRFP441 IRFP442 C-541 T-39-13 C-542 C-543
Abstract: FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Â" Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Â" Max rDS(on) = 35m: at VGS = -4.5V, ID = , Voltage Temperature Coefficient ID = -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 , -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward , -15V, ID = -8.8A ns 30 Fall Time ns 12 12 td(off) tf 20 6 VDD = -15V Fairchild Semiconductor
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Abstract: ® 5.5 mJ Peak Diode Recovery dv/dt ® 5.5 V/ns 55 0.44 w/°c V DSS â'¢d , 0.06 0.75 £ 2 VGS=10V, lD=8.8A © Forward Transconductance - 19 - S V ds=40V, Id=8.8A © Ciss Input Capacitance - 2400 3100 Coss Output Capacitance , =125°C nC ©© V q3=160V, Vgs=1 0V Id=34A See Fig 6 & Fig 12 © © SOURCE-DRAIN DIODE , Characteristics - 17.5 Units Test Conditions A Integral reverse pn-diode in the MOSFET 'sm -
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FQPF34N20

6R130G

Abstract: 120 A diode FUJI [ITUMÃ'ÏMIÃ' 6-Pack Diode 600/800 V 30 A POWER DIODE MODULE â  Outline Drawings , . The diode chips are coated with a glass of zinc oxide, making them highly resistant to temperature and humidity variation. 6 diode chips are connected to the 3-phase bridge rectifying circuit inside the , voltage Vrsm 1320 1760 V Average output current lo 50/60 Hz Sinewave.Tr = 88°C 30 A Surge current l|~SM Rated load conditions 320 A I2, I2, Rated load conditions 400 A2s Junction
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6R130G 120 A diode newave power R601 IMRM 6RI30E-060/080 30E-060/080

diode SM 88A

Abstract: Recovery Charge, Qrr â'¢ Soft Reverse Recovery Body Diode â'¢ Enables Highly Efficiency in Synchronous , EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) (TC = 25oC , Resistance - 2.91 3.5 mΩ gFS Forward Transconductance VGS = 10V, ID = 88A VDS = 10V, ID = 88A - 176 - S Dynamic Characteristics Ciss Input Capacitance Coss , ) VDD = 30V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4) f = 1MHz Drain-Source Diode
Fairchild Semiconductor
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FDPF035N06B

a514

Abstract: ba 513 diode TS808C06(3oa) SCHOTTKY BARRIER DIODE i Features Surface mount device. Super high speed switching. High reliability by planer design : Applications High speed power switching. : Outline Drawings CD II S 4.5 lot OB» n 1.32 I 0.4 0 2.7 JEDEC EIAJ ¡roc Connection Diagram , VRSM tw = 500ns, duty = % 60 V Â¥ Kj tt )] t im, Average Output Current Io #Ã",duty = y2, Tc=88°C Square wave 30* A - *J lì iJfc Surge Current IK SM illii'ià Sine wave 10ms 'aLmVtftikt&M 200 A té ft
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a514 ba 513 diode H125
Abstract: SCHOTTKY BARRIER DIODE 22a / 9o~ ioov 'j g â"¢ « c l S ï î ^ n î S u ! f S f o , conduction Tc = 88°C Full sinusoidal wave conduction Tc = 96°C Average Rectified Output Current RMS , lF(RMS) ! f SM 50Hz full sine wave 1 cycle, non-repetitive Recommended torque (GCH,FCH , Forward Voltage VFM IFM =10A Tj =25°C per diode leg 0.88 V Peak Reverse Current ÃRM VRM = VRRM Tj =25°C per diode leg 2 mA ^th(j-c) Junction to Ceise Rth(c-0 Case -
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C20T-Q C20T-Q-11A T0-220AB GCH20A- FCH20A C20T09Q

H125

Abstract: TS808C06 TS808C06(3oa) SCHOTTKY BARRIER DIODE i Features Surface mount device. Super high speed switching. High reliability by planer design : Applications High speed power switching. : Outline Drawings CD II S 4.5 lot OB» n 1.32 I 0.4 0 2.7 JEDEC EIAJ ¡roc Connection Diagram , VRSM tw = 500ns, duty = % 60 V Â¥ Kj tt )] t im, Average Output Current Io #Ã",duty = y2, Tc=88°C Square wave 30* A - *J lì iJfc Surge Current IK SM illii'ià Sine wave 10ms 'aLmVtftikt&M 200 A té ft
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FQPF*9n25c

Abstract: diode SM 88A Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note , 40 180 190 140 35 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.8 A Drain-Source Diode Forward Voltage Reverse Recovery , junction temperature 2. L = 5.9mH, IAS = 8.8A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 8.8A, di/dt
Fairchild Semiconductor
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FQP9N50C FQPF9N25C FQPF*9n25c FQPF9N50C FQP9N25C
Abstract: greased Free air operation A 1.8 970 ns 8.9 liC Source Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) (Note 3) 's 'SM , â'¢ 7.7A and 8.8A, 400V - 500V â'¢ ros(on) = 0.851"! and 1.1 SI â'¢ Single Pulse Avalanche Energy , >D 1 1 â'" â'" I p- ] 'â'¢ ) â'¢S Diode Forward Voltage (Note 2) T j = +25°C, Is = 8.8A, VGS = OV - Reverse Recovery Time VSD trr T j = +25°C, Ip = 8.0A, dlp/dt = 100A/(is -
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IRFP440R IRFP441R IRFP442R IRFP443R RFP440R RFP442R

diode SM 88A

Abstract: marking cd sot-353 DF SU FFIX 5-LEAD SOT-353 PACKAGE SC-88A CASE 419A-01 PRO PO SED DT SU FFIX 5-LEAD TSSO P PACKAGE , MC74HC1G04DFT1 MC74HC1G04DTT1 Technology HC1G HC1G Tape and Reel Suffix T1 T1 Package Type SC-88A TSOP5 , haracteristics DC Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC , Conditions. tDerating - SC-88A Package: -3 mW/°C from 65° to 125°C - TSOP5 Package: -6 m W rC from 65° to , -353 PACKAGE SC-88A CASE 419A-01 ISSU E B NOTES: 1. DIMENSIONING ANO TOtERANCING PER ANSI Y145M, 1982. 2
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marking cd sot-353 MC74HC1G04/D MC74HC1G04 MC74HC SC-88A
Abstract: Time â  s SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current 22 â  sm Pulse Source Current2 88 V SD Diode Forward Voltage trr nC 21 VDD = 50V 145 , Continuous Drain Current (VGS = 0 , Tcase = 100°C) 13.9A â'¢dm Pulsed Drain C u rre n t1 88A , dv/dt Peak Diode Recovery 3 5.5V/ns T j > T"stg Operating and Storage Temperature Range -
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IRF140SM T0-220SM S1331S7

HC1G02

Abstract: DIODE MARKING code UG 45 · V ery sm all 5 pins package · O utput capability: standard. tpHL, tPLH C| CpD 74HC1G02 , SC -88A SC -88A MATERIAL plastic plastic CODE SO T353 SO T353 MARKING HB TB inB |~i , DC supply vo lta g e DC input diode current DC output diode current DC output source or sin k current , SOT353 REFERENCES I EC JEDEC EIAJ SC-88A EUROPEAN PROJECTION ISSUE DATE ^30 97-02-28 , follow ed by a sm ooth lam inar w ave) soldering technique should be used. · T he longitudinal axis of
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HC1G02 DIODE MARKING code UG 45 74HCT1G02 SCA60
Abstract: , JEDEC MO-178, 1.6mm 5-Lead SC70, EIAJ SC-88a, 1.25mm Wide 6-Lead MicroPak, 1.0mm Wide Supplied As 3k , VCC VIN VOUT IIK Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current @ VIN < ­0.5V @ VIN > 6V DC Output Diode Current @ VOUT < ­0.5V @ VOUT > 6V, VCC = GND DC Output Current DC VCC , -Lead SC70, EIAJ SC-88a, 1.25mm Wide Package drawings are provided as a service to customers considering , ® FACT FAST® FastvCoreTM FlashWriter® * FPSTM F-PFSTM FRFET® SM Global Power Resource Green FPSTM Fairchild Semiconductor
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NC7SZ04 NC7SZ04M5X NC7SZ04P5X NC7SZ04L6X MA05B MAA05A
Abstract: MAC06A Package Code Top Mark V04 F7 Package Description 5-Lead SC70, EIAJ SC-88a, 1.25mm Wide 6 , ±50mA ­65°C to +150°C 150°C 260°C 150mW 130mW IIK IOK DC Input Diode Current @ VIN < 0V DC Output Diode Current VOUT < 0V VOUT > VCC DC Output Source/Sink Current DC VCC or Ground Current per Supply Pin , ® ULP-A Inverter Physical Dimensions RECOMMENED LAND PATTERN Figure 3. 5-Lead SC70, EIAJ SC-88a , Quiet SeriesTM ® FACT ® FAST FastvCoreTM ®* FlashWriter ® ® FPSTM F-PFSTM ® FRFET SM Global Power Fairchild Semiconductor
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NC7SV04 NC7SV04P5X NC7SV04L6X
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