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diode SM 88A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: pn-diode in the MOSFET 'SM Pulsed-Source Current ® - - 35 VSD Diode Forward Voltage © - - 1.5 V Tj=25°C, ls=8.8A, VGS=0V trr Reverse Recovery Time - 240 - ns Tj=25°C, lF=11.4A, Vdd=320V diF/dt=100A/(j,s  , Avalanche Current ® 8.8 A Ear Repetitive Avalanche Energy ® 9.0 mJ dv/dt Peak Diode Recovery dv/dt  , 8.8A TO-3PF PAIRCHILD SEMICONDUCTOR tm © 1999 Fairchild Semiconductor Corporation REV. C 1 , Qgd Gate-Drain (Miller) Charge - 12.3 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol -
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FQAF11N40
Abstract: Integral reverse pn-diode in the MOSFET 'sm Pulsed-Source Current © - - 35 v sd Diode Forward Voltage © - - 1.5 V TJ=25°C, ls=8.8A, VGS=0V Reverse Recovery Time , 8.8A ABSOLUTE MAXIMUM RATINGS Symbol â'¢d â'¢d m Value Units Drain-to-Source Voltage , ® 8.8 A Ear Repetitive Avalanche Energy ® 9.0 mJ Peak Diode Recovery dv/dt , ) ^d(off) tf Qg SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 's Min. Continuous -
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Abstract: FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A , -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S Fairchild Semiconductor
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Abstract: FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A , Temperature Coefficient ID = -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS , = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance , Charge VDD = -15V, ID = -8.8A 20 ns ns 48 ns 22 ns 28 Fall Time VDD = Fairchild Semiconductor
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FDS4435BZ_F085 FDS4435BZ-F085
Abstract: FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Â" Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Â" Max rDS(on) = 35m: at VGS = -4.5V, ID , to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S Dynamic Fairchild Semiconductor
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Abstract: junction rectifier. / flâ'" 'SM Pulsed Source Current (Body Diode) © ALL â'" â'" 35 A Vs d Diode Forward Voltage © ALL - - 1.8 V T j » 25°C, lS - 8.8A, VeS = , high transconductance; superior reverse energy and diode recovery dv/dt capability. IRFP440 V DS R DS(on) 'd 500V 0.850 8.8A They are well suited for applications such as switching , . 450V 0.850 8.8A 500V 1.10 7.7A IRFP443 T he H E X FE T transistors also feature all -
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IRFP441 IRFP442 C-541 T-39-13 C-542 C-543
Abstract: FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Â" Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Â" Max rDS(on) = 35m: at VGS = -4.5V, ID = , Voltage Temperature Coefficient ID = -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 , -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward , -15V, ID = -8.8A ns 30 Fall Time ns 12 12 td(off) tf 20 6 VDD = -15V Fairchild Semiconductor
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Abstract: ® 5.5 mJ Peak Diode Recovery dv/dt ® 5.5 V/ns 55 0.44 w/°c V DSS â'¢d , 0.06 0.75 £ 2 VGS=10V, lD=8.8A © Forward Transconductance - 19 - S V ds=40V, Id=8.8A © Ciss Input Capacitance - 2400 3100 Coss Output Capacitance , =125°C nC ©© V q3=160V, Vgs=1 0V Id=34A See Fig 6 & Fig 12 © © SOURCE-DRAIN DIODE , Characteristics - 17.5 Units Test Conditions A Integral reverse pn-diode in the MOSFET 'sm -
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FQPF34N20
Abstract: FUJI [ITUMÃ'ÏMIÃ' 6-Pack Diode 600/800 V 30 A POWER DIODE MODULE â  Outline Drawings , . The diode chips are coated with a glass of zinc oxide, making them highly resistant to temperature and humidity variation. 6 diode chips are connected to the 3-phase bridge rectifying circuit inside the , voltage Vrsm 1320 1760 V Average output current lo 50/60 Hz Sinewave.Tr = 88°C 30 A Surge current l|~SM Rated load conditions 320 A I2, I2, Rated load conditions 400 A2s Junction -
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6R130G 120 A diode IMRM newave power R601 6RI30E-060/080 30E-060/080
Abstract: Recovery Charge, Qrr â'¢ Soft Reverse Recovery Body Diode â'¢ Enables Highly Efficiency in Synchronous , EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) (TC = 25oC , Resistance - 2.91 3.5 mΩ gFS Forward Transconductance VGS = 10V, ID = 88A VDS = 10V, ID = 88A - 176 - S Dynamic Characteristics Ciss Input Capacitance Coss , ) VDD = 30V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4) f = 1MHz Drain-Source Diode Fairchild Semiconductor
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FDPF035N06B
Abstract: TS808C06(3oa) SCHOTTKY BARRIER DIODE i Features Surface mount device. Super high speed switching. High reliability by planer design : Applications High speed power switching. : Outline Drawings CD II S 4.5 lot OB» n 1.32 I 0.4 0 2.7 JEDEC EIAJ ¡roc Connection Diagram , VRSM tw = 500ns, duty = % 60 V Â¥ Kj tt )] t im, Average Output Current Io #Ã",duty = y2, Tc=88°C Square wave 30* A - *J lì iJfc Surge Current IK SM illii'ià Sine wave 10ms 'aLmVtftikt&M 200 A té ft -
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a514 ba 513 diode H125
Abstract: SCHOTTKY BARRIER DIODE 22a / 9o~ ioov 'j g â"¢ « c l S ï î ^ n î S u ! f S f o , conduction Tc = 88°C Full sinusoidal wave conduction Tc = 96°C Average Rectified Output Current RMS , lF(RMS) ! f SM 50Hz full sine wave 1 cycle, non-repetitive Recommended torque (GCH,FCH , Forward Voltage VFM IFM =10A Tj =25°C per diode leg 0.88 V Peak Reverse Current ÃRM VRM = VRRM Tj =25°C per diode leg 2 mA ^th(j-c) Junction to Ceise Rth(c-0 Case -
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C20T-Q C20T-Q-11A T0-220AB GCH20A- FCH20A C20T09Q
Abstract: TS808C06(3oa) SCHOTTKY BARRIER DIODE i Features Surface mount device. Super high speed switching. High reliability by planer design : Applications High speed power switching. : Outline Drawings CD II S 4.5 lot OB» n 1.32 I 0.4 0 2.7 JEDEC EIAJ ¡roc Connection Diagram , VRSM tw = 500ns, duty = % 60 V Â¥ Kj tt )] t im, Average Output Current Io #Ã",duty = y2, Tc=88°C Square wave 30* A - *J lì iJfc Surge Current IK SM illii'ià Sine wave 10ms 'aLmVtftikt&M 200 A té ft -
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Abstract: Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) (Note , 40 180 190 140 35 - ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 8.8 A Drain-Source Diode Forward Voltage Reverse Recovery , junction temperature 2. L = 5.9mH, IAS = 8.8A, VDD = 50V, RG = 25 , Starting TJ = 25°C 3. ISD 8.8A, di/dt Fairchild Semiconductor
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FQP9N50C FQPF9N25C FQPF*9n25c FQPF9N50C FQP9N25C
Abstract: greased Free air operation A 1.8 970 ns 8.9 liC Source Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) (Note 3) 's 'SM , â'¢ 7.7A and 8.8A, 400V - 500V â'¢ ros(on) = 0.851"! and 1.1 SI â'¢ Single Pulse Avalanche Energy , >D 1 1 â'" â'" I p- ] 'â'¢ ) â'¢S Diode Forward Voltage (Note 2) T j = +25°C, Is = 8.8A, VGS = OV - Reverse Recovery Time VSD trr T j = +25°C, Ip = 8.0A, dlp/dt = 100A/(is -
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IRFP440R IRFP441R IRFP442R IRFP443R RFP440R RFP442R
Abstract: DF SU FFIX 5-LEAD SOT-353 PACKAGE SC-88A CASE 419A-01 PRO PO SED DT SU FFIX 5-LEAD TSSO P PACKAGE , MC74HC1G04DFT1 MC74HC1G04DTT1 Technology HC1G HC1G Tape and Reel Suffix T1 T1 Package Type SC-88A TSOP5 , haracteristics DC Supply Voltage DC Input Voltage DC Output Voltage Input Diode Current Output Diode Current DC , Conditions. tDerating - SC-88A Package: -3 mW/°C from 65° to 125°C - TSOP5 Package: -6 m W rC from 65° to , -353 PACKAGE SC-88A CASE 419A-01 ISSU E B NOTES: 1. DIMENSIONING ANO TOtERANCING PER ANSI Y145M, 1982. 2 -
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marking cd sot-353 MC74HC1G04/D MC74HC1G04 MC74HC SC-88A
Abstract: Time â  s SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current 22 â  sm Pulse Source Current2 88 V SD Diode Forward Voltage trr nC 21 VDD = 50V 145 , Continuous Drain Current (VGS = 0 , Tcase = 100°C) 13.9A â'¢dm Pulsed Drain C u rre n t1 88A , dv/dt Peak Diode Recovery 3 5.5V/ns T j > T"stg Operating and Storage Temperature Range -
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IRF140SM T0-220SM S1331S7
Abstract: · V ery sm all 5 pins package · O utput capability: standard. tpHL, tPLH C| CpD 74HC1G02 , SC -88A SC -88A MATERIAL plastic plastic CODE SO T353 SO T353 MARKING HB TB inB |~i , DC supply vo lta g e DC input diode current DC output diode current DC output source or sin k current , SOT353 REFERENCES I EC JEDEC EIAJ SC-88A EUROPEAN PROJECTION ISSUE DATE ^30 97-02-28 , follow ed by a sm ooth lam inar w ave) soldering technique should be used. · T he longitudinal axis of -
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DIODE MARKING code UG 45 HC1G02 74HCT1G02 SCA60
Abstract: , JEDEC MO-178, 1.6mm 5-Lead SC70, EIAJ SC-88a, 1.25mm Wide 6-Lead MicroPak, 1.0mm Wide Supplied As 3k , VCC VIN VOUT IIK Supply Voltage DC Input Voltage DC Output Voltage DC Input Diode Current @ VIN < ­0.5V @ VIN > 6V DC Output Diode Current @ VOUT < ­0.5V @ VOUT > 6V, VCC = GND DC Output Current DC VCC , -Lead SC70, EIAJ SC-88a, 1.25mm Wide Package drawings are provided as a service to customers considering , ® FACT FAST® FastvCoreTM FlashWriter® * FPSTM F-PFSTM FRFET® SM Global Power Resource Green FPSTM Fairchild Semiconductor
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NC7SZ04 NC7SZ04M5X NC7SZ04P5X NC7SZ04L6X MA05B MAA05A
Abstract: MAC06A Package Code Top Mark V04 F7 Package Description 5-Lead SC70, EIAJ SC-88a, 1.25mm Wide 6 , ±50mA ­65°C to +150°C 150°C 260°C 150mW 130mW IIK IOK DC Input Diode Current @ VIN < 0V DC Output Diode Current VOUT < 0V VOUT > VCC DC Output Source/Sink Current DC VCC or Ground Current per Supply Pin , ® ULP-A Inverter Physical Dimensions RECOMMENED LAND PATTERN Figure 3. 5-Lead SC70, EIAJ SC-88a , Quiet SeriesTM ® FACT ® FAST FastvCoreTM ®* FlashWriter ® ® FPSTM F-PFSTM ® FRFET SM Global Power Fairchild Semiconductor
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NC7SV04 NC7SV04P5X NC7SV04L6X
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