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diode SM 88A

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: pn-diode in the MOSFET 'SM Pulsed-Source Current ® - - 35 VSD Diode Forward Voltage © - - 1.5 V Tj=25°C, ls=8.8A, VGS=0V trr Reverse Recovery Time - 240 - ns Tj=25°C, lF=11.4A, Vdd=320V diF/dt=100A/(j,s  , Avalanche Current ® 8.8 A Ear Repetitive Avalanche Energy ® 9.0 mJ dv/dt Peak Diode Recovery dv/dt  , 8.8A TO-3PF PAIRCHILD SEMICONDUCTOR tm © 1999 Fairchild Semiconductor Corporation REV. C 1 , Qgd Gate-Drain (Miller) Charge - 12.3 - SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol ... OCR Scan
datasheet

7 pages,
344.09 Kb

FQAF11N40 diode SM 88A TEXT
datasheet frame
Abstract: Integral reverse pn-diode in the MOSFET 'sm Pulsed-Source Current © - - 35 v sd Diode Forward Voltage © - - 1.5 V TJ=25°C, ls=8.8A, VGS=0V Reverse Recovery Time , 8.8A ABSOLUTE MAXIMUM RATINGS Symbol •d •d m Value Units Drain-to-Source Voltage , ® 8.8 A Ear Repetitive Avalanche Energy ® 9.0 mJ Peak Diode Recovery dv/dt , ) ^d(off) tf Qg SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Symbol 's Min. Continuous ... OCR Scan
datasheet

7 pages,
206.39 Kb

FQAF11N40 TEXT
datasheet frame
Abstract: FDS4435BZ FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A , -250PA -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S ... Fairchild Semiconductor
Original
datasheet

6 pages,
222 Kb

FDS4435BZ diode SM 88A TEXT
datasheet frame
Abstract: FDS4435BZ FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A , Temperature Coefficient ID = -250PA -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS , = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance , Charge VDD = -15V, ID = -8.8A 20 ns ns 48 ns 22 ns 28 Fall Time VDD = ... Fairchild Semiconductor
Original
datasheet

6 pages,
283.02 Kb

FDS4435BZ-F085 FDS4435BZ FDS4435BZ_F085 diode SM 88A TEXT
datasheet frame
Abstract: FDS4435BZ FDS4435BZ_F085 P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This „ Max rDS(on) = 35m: at VGS = -4.5V, ID , to 25°C 6 VGS = -10V, ID = -8.8A 16 20 rDS(on) Static Drain to Source On Resistance VGS = -4.5V, ID = -6.7A 26 35 VGS = -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward Transconductance -1 -2.1 mV/°C m: S Dynamic ... Fairchild Semiconductor
Original
datasheet

6 pages,
254 Kb

FDS4435BZ TEXT
datasheet frame
Abstract: junction rectifier. / fl— 'SM Pulsed Source Current (Body Diode) © ALL — — 35 A Vs d Diode Forward Voltage © ALL - - 1.8 V T j » 25°C, lS - 8.8A, VeS = , high transconductance; superior reverse energy and diode recovery dv/dt capability. IRFP440 IRFP440 V DS R DS(on) 'd 500V 0.850 8.8A They are well suited for applications such as switching , . 450V 0.850 8.8A 500V 1.10 7.7A IRFP443 IRFP443 T he H E X FE T transistors also feature all ... OCR Scan
datasheet

8 pages,
205.76 Kb

TEXT
datasheet frame
Abstract: FDS4435BZ FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: Features General Description „ Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A This „ Max rDS(on) = 35m: at VGS = -4.5V, ID = , Voltage Temperature Coefficient ID = -250PA -250PA, referenced to 25°C 6 VGS = -10V, ID = -8.8A 16 , -10V, ID = -8.8A, TJ = 125°C 22 28 VDS = -5V, ID = -8.8A 24 gFS Forward , -15V, ID = -8.8A ns 30 Fall Time ns 12 12 td(off) tf 20 6 VDD = -15V ... Fairchild Semiconductor
Original
datasheet

6 pages,
212.37 Kb

FDS4435BZ TEXT
datasheet frame
Abstract: ® 5.5 mJ Peak Diode Recovery dv/dt ® 5.5 V/ns 55 0.44 w/°c V DSS •d , 0.06 0.75 £ 2 VGS=10V, lD=8.8A © Forward Transconductance - 19 - S V ds=40V, Id=8.8A © Ciss Input Capacitance - 2400 3100 Coss Output Capacitance , =125°C nC ©© V q3=160V, Vgs=1 0V Id=34A See Fig 6 & Fig 12 © © SOURCE-DRAIN DIODE , Characteristics - 17.5 Units Test Conditions A Integral reverse pn-diode in the MOSFET 'sm ... OCR Scan
datasheet

6 pages,
188.77 Kb

FQPF34N20 TEXT
datasheet frame
Abstract: FUJI [ITUMËÏMIË 6-Pack Diode 600/800 V 30 A POWER DIODE MODULE ■ Outline Drawings , . The diode chips are coated with a glass of zinc oxide, making them highly resistant to temperature and humidity variation. 6 diode chips are connected to the 3-phase bridge rectifying circuit inside the , voltage Vrsm 1320 1760 V Average output current lo 50/60 Hz Sinewave.Tr = 88°C 30 A Surge current l|~SM Rated load conditions 320 A I2, I2, Rated load conditions 400 A2s Junction ... OCR Scan
datasheet

3 pages,
161.95 Kb

R601 newave power IMRM 120 A diode 6R130G TEXT
datasheet frame
Abstract: Recovery Charge, Qrr • Soft Reverse Recovery Body Diode • Enables Highly Efficiency in Synchronous , EAS Single Pulsed Avalanche Energy dv/dt Peak Diode Recovery dv/dt (Note 3) (TC = 25oC , Resistance - 2.91 3.5 mΩ gFS Forward Transconductance VGS = 10V, ID = 88A VDS = 10V, ID = 88A - 176 - S Dynamic Characteristics Ciss Input Capacitance Coss , ) VDD = 30V, ID = 100A VGS = 10V, RGEN = 4.7Ω (Note 4) f = 1MHz Drain-Source Diode ... Fairchild Semiconductor
Original
datasheet

10 pages,
351.02 Kb

diode SM 88A FDPF035N06B TEXT
datasheet frame

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Spice Models 29/07/2012 388.92 Kb ZIP icap4winliblist.zip
commutation Title Date AN 3Q TRIACS: Three quadrant triacs bring major benefits to OEMs 1999-05-17 AN SM T AND Date AN SM T AND T: Surface Mounted Triacs and Thyristors 1999-07-01 APPCHP6: Power Control with Date AN SM T AND T: Surface Mounted Triacs and Thyristors 1999-07-01 APPCHP6: Power Control with quadrant triacs bring major benefits to OEMs 1999-05-17 AN SM T AND T: Surface Mounted 38 1 0 /catalog Applicationnotes for Zener diodes Title Date AN ZENBLOCK: Zenblock : integrated zener and blocking diode 1999-03-09
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diode / transistor mod Title Date AN10117 AN10117 1.pdf: Medium Power Transistors and Rectifiers for Power TRIACS.pdf: Three quadrant triacs bring major benefits to OEMs 1999-05-17 AN SM T AND T.pdf: Surface Mounted : Horizontal deflection transistors for 17, 70 kHz monitors 1999-12-13 AN SM T AND T.pdf: Surface Mounted bring major benefits to OEMs 1999-05-17 AN SM T AND T.pdf: Surface Mounted 57 1 0 /catalog/appnotes /appnotes/28803.html Applicationnotes for Diode Amplifier and Laser Supply Title Date AN96017 AN96017 1.pdf: Outline
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Philips 16/06/2005 2589.32 Kb TXT docindex-v1.txt
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