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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

diode DLA 5.9

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY DLA LAND AND , ) . -0.5 V dc to VCC +0.5 V dc DC input diode current (IIK) . ± 20 mA DC output diode current (IOK , , derate linearly at 12 mW/°C. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO , . 24 MHz STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC Texas Instruments
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Abstract: 5 6 7 8 9 10 11 PMIC N/A PREPARED BY DLA LAND AND MARITIME COLUMBUS , voltage range (VOUT) . Clamp diode , diode current (per pin) (IOUT) . DC VCC or GND , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE , test circuit shall be as specified on figure 4. STANDARD MICROCIRCUIT DRAWING DLA LAND AND Texas Instruments
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Abstract: SHEET 1 2 3 4 5 6 7 8 9 10 11 12 PMIC N/A PREPARED BY DLA , . -0.5 V dc to VCC +0.5 V dc DC input diode current . ±20 mA DC output diode current , , derate linearly at 12 mW/°C. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO , -S Arlington, VA 22201-2107). STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO DEPARTMENT OF DEFENSE
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82m21a

Abstract: AUIRF3315STRR Operating Junction and Storage Temperature Range c Peak Diode Recovery dv/dt e c d Thermal , (0.25in.) from package and center of die contact VGS = 0V VDS = 25V = 1.0MHz, See Fig. 5 Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time , MOSFET symbol showing the integral reverse G D Ã S p-n junction diode. TJ = 25°C, IS = 43A, VGS =
International Rectifier
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Abstract: 9 10 11 12 13 14 PMIC N/A PREPARED BY DLA LAND AND MARITIME COLUMBUS, OHIO , ) . DC input diode current (IIK) (VIN < -0.5 V or VIN > VCC + 0.5 V). DC output diode current (IOK) (VOUT < -0.5 V or VOUT > VCC + 0.5 V) . , to 300 mW. STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE Texas Instruments
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Abstract: 2 3 4 5 6 7 8 9 10 11 12 13 14 PMIC N/A PREPARED BY DLA , ) . DC input diode current (IIK, for VIN < -0.5 V or VIN > VCC + 0.5 V) . DC output diode current (IOK, for VOUT < -0.5 V or VOUT > VCC + 0.5 V) . DC , DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE 5962-89953 , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE Texas Instruments
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Abstract: PREPARED BY DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 http://www.landandmaritime.dla.mil , ) . Clamp diode current (IIC , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE , test circuit shall be as specified on figure 4. STANDARD MICROCIRCUIT DRAWING DLA LAND AND , of supply in MIL-HDBK-103 (see 6.6 herein). The certificate of compliance submitted to DLA Land and Texas Instruments
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5962-R329-92 MIL-PRF-38535 5962-E215-13 MIL-STD-883 MIL-PRF-385 QML-38535
Abstract: from the DLA Standard Micro-circuit Drawing (SMD) 5962-89477. All devices are manufactured and tested on a MIL-PRF-38534 certified line and are included in the DLA Qualified Manufacturers List, QML , part number and DLA standard microcircuit drawing Manufactured and tested on a MIL-PRF-38534 certified , induced by ESD. Each unit contains a light emitting diode (LED), a threshold sensing input buffer IC , the circuitry and LED from a wide range of over-voltage and over-current transients while the diode Avago Technologies
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HCPL-576 QML-38534 HCPL-3700 5968-9404E 5988-3098EN AV02-3836EN
Abstract: Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Æ' = 1.0MHz, See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Ù â'"â'"â'" â'"â'"â'" â'"â'"â'" â'"â'"â'" h Units 82 A 280 VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery Time , the integral reverse G p-n junction diode. TJ = 25°C, IS = 43A, VGS = 0V f S TJ = International Rectifier
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AUIRF2807

AEC-Q101-005

Abstract: auirfp064n EAR dv/dt TJ TSTG à d 59 A 20 mJ 5.0 Peak Diode Recovery dv/dt e , Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge à Notes: Repetitive , Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25°C, IS = 59A, VGS = 0V
International Rectifier
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AEC-Q101-005 auirfp064n AEC-Q101-002 AEC-Q101-001 AUFP064N AEC-Q1010 AUIRFP064N
Abstract: Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature , , =1.0MHz VGS = 0V, VDS = 0V to 32V G D S g Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward , symbol G S D h à 640 1.3 94 250 V ns nC p-n junction diode. TJ = 25°C, IS = 95A, VGS = 0V TJ , Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com AUIRL1404S/L 160 International Rectifier
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AUIRL1404S AUIRL1404L

AUIRF2807

Abstract: Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range , VGS = 0V VDS = 25V = 1.0MHz, See Fig.5 f Ãf D G S Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode , integral reverse G S D h à 280 1.2 150 610 V ns nC p-n junction diode. TJ = 25°C, IS = 43A , ) VDS , Drain-toSource Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8
International Rectifier
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diode DLA 5.9

Abstract: AUF2807 Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating , , See Fig.5 Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode , symbol 280 ­­­ Units A VSD (Body Diode) Diode Forward Voltage trr Reverse Recovery , Forward Turn-On Time V showing the integral reverse D G p-n junction diode. TJ = 25°C, IS , Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage
International Rectifier
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diode DLA 5.9 AUF2807
Abstract: to + 150 °C Max. Units 62.5 °C/W c g g Continuous Source Current (Diode , Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage , 0V VDS = -25V Æ' = 1.0MHz,See Fig.5 fà f Diode Characteristics Parameter IS Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse , p-n junction diode. TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C,IF = -1.7A di/dt = 100A/μs f International Rectifier
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AUIRF7316Q

asme

Abstract: 200V AUTOMOTIVE MOSFET g g Continuous Source Current (Diode Conduction) Power Dissipation Power Dissipation Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , ,See Fig.5 fà f Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse , nC Conditions MOSFET symbol showing the integral reverse G D à S p-n junction diode. TJ =
International Rectifier
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asme 200V AUTOMOTIVE MOSFET AUIRF7316QTR 96365B
Abstract: dv/dt TJ TSTG 110 ™ Ù d A 59 A 20 mJ 5.0 ™ Peak Diode , Reverse Transfer Capacitance Diode Characteristics Parameter IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse , V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25 , military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and International Rectifier
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Abstract: to + 150 °C Max. Units 62.5 °C/W c g g Continuous Source Current (Diode , Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage , "¦ VGS = 0V VDS = -25V Æ' = 1.0MHz,See Fig.5 fà f Diode Characteristics Parameter IS Continuous Source Current ISM VSD trr Qrr (Body Diode) Pulsed Source Current (Body Diode) Diode , p-n junction diode. TJ = 25°C, IS = -1.7A, VGS = 0V TJ = 25°C,IF = -1.7A di/dt = 100A/μs f International Rectifier
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5962R8961002VXC

Abstract: 5962R8961002VHA PREPARED BY RICK OFFICER STANDARD MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO , -55°C to +125°C Circuit function Voltage reference diode Voltage reference diode 1.2.3 Device , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE , conditions as specified in MIL-STD-883, method 1019, condition A . STANDARD MICROCIRCUIT DRAWING DLA , MICROCIRCUIT DRAWING DLA LAND AND MARITIME COLUMBUS, OHIO 43218-3990 DSCC FORM 2234 APR 97 SIZE
Linear Technology
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GDFP1-F10 5962R8961002VXC 5962R8961002VHA 5962-8961001XA MTLT1009QH M38510/14802BXA LT1009MH/883 5962-8961001XC

IRF3205 application

Abstract: Avalanche Energy e Peak Diode Recovery dv/dt eh TJ Operating Junction and TSTG Storage , Diode Characteristics Parameter Min. Typ. Max. Units IS Continuous Source Current â'"â'"â'" â'"â'"â'" 64 ISM (Body Diode) Pulsed Source Current â'"â'"â'" â'"â'"â'" 390 VSD trr Qrr ton (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge , junction diode. TJ = 25°C, IS = 34A, VGS = 0V TJ = 25°C, IF = 59A di/dt = 100A/μs fh Intrinsic
International Rectifier
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IRF3205 application AUIRFI3205

IRF3205 application

Abstract: irf3205 DRIVER Diode Recovery dv/dt eh Operating Junction and ch dh Storage Temperature Range Soldering , 1.0MHz fh ns fh D G S nH pF h D Diode Characteristics Parameter IS ISM VSD trr Qrr ton Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward , the integral reverse G Ã S p-n junction diode. TJ = 25°C, IS = 34A, VGS = 0V TJ = 25°C, IF = , ) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area www.irf.com
International Rectifier
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irf3205 DRIVER Mosfet IRF3205 IRF3205 IR
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