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TPD4E004DSFR Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD3E001DRY Texas Instruments UNIDIRECTIONAL, SILICON, TVS DIODE visit Texas Instruments
TPD2E001YFPR Texas Instruments DIODE UNIDIRECTIONAL, SILICON, TVS DIODE, LEAD FREE, DSBGA-4, Transient Suppressor visit Texas Instruments
UC1610J/883B Texas Instruments SILICON, BRIDGE RECTIFIER DIODE visit Texas Instruments
UC3612DP Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments
UC3612J Texas Instruments SILICON, RECTIFIER DIODE visit Texas Instruments

diode BYW

Catalog Datasheet MFG & Type PDF Document Tags

74l500

Abstract: 74LS00 HCTL-1100 2 1 2 1 D1 DIODE BYW 98 C3 15 nF 2 2 2 6 10 11 1 2 SENSE D2 DIODE BYW 98 C1 15 nF 13 6 OPTICAL INCREMENTAL ENCODER SIGNALS 10 5 CH , DAC08 1 B3 B2 B1 COMP 16 VLC * D2 DIODE C2 1 2 0.1 µF 1 ­V R2 C4 0.1 , C4 2 2 ­15V VIN 1 R3 1 OHM ­15V +VR ­VR *D1 DIODE 4 U3 L165 B5
Hewlett-Packard
Original
M-024 74LS00 74l500 UF 407 Diode Encoder interface with HCTL-1100 74ls00 circuit diagram M109 B1 M-015 M-016 M-021 M-003 M-101

of ic 74ls00

Abstract: 74l500 74LS00 1 FROM HCTL-1100 D1 DIODE BYW 98 C3 15 nF 2 9 U1C 74LS00 6 GND U1D 74L500 C2 22 nF 2 2 6 D2 DIODE BYW 98 C1 15 nF 10 11 1 2 SENSE 13 , * D2 DIODE C2 1 2 0.1 µF 1 1 2 1 C4 ­V R2 C4 0.1 µF 3 5.0 K 1 C1 2 0.01 µF , DIODE 4 U3 L165 2 B5 B4 2 0.1 µF U2 B7 B6 OPTICAL INCREMENTAL ENCODER
Avago Technologies
Original
of ic 74ls00 datasheet of ic 74ls00 motorola byw 21 bridge rectifier diode u1d ON 74LS00 integrated circuit LOGIC OF 74L500 M-109 REF-01 5964-9816E 5965-3476E
Abstract: 0.3 0.36 0.9 - 1 V V V 4 V SOURCE DRAIN DIODE Vsd tâ'ž Forward ON Voltage Fig , : Normalized R d s (ON)at 25°C vs. Tem perature Typical Values t1B9L 6223-22 Figure 6a: Typical Diode Behaviour in Figure 6b: Typical Diode Behaviour in 0 -2 0 .6 1 .0 1 .4 v-sd.s/CS;^) Figure , ON STATE. Transitions Us As already seen above the transistors have an in­ trinsic diode between their source and drain that can operate as a fast freewheeling diode in switched mode -
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L6201 L6202-L6203 L6202 L6203 L6201-L6202-L6203

fast diode byw 98 200

Abstract: diode BYW I.C.; one diode (BYW 98) is connected be tween each power output pin and ground as well. The following , 0.3 0.36 0.9 4 V V V V Vsens Sensing Voltage SO URC E DRAIN DIODE Vsd Forward ON Voltage , perature Typical Values M89L6 2 2 3 - 2 2 Figure 6a: Typical Diode Behaviour in Figure 6b: Typical Diode Behaviour in Figure 7b: Typical Power Dissipation vs II 6 /1 5 SGS-THOMSON 3 76 , trinsic diode between their source and drain tl can operate as a fast freewheeling diode switched mode
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fast diode byw 98 200 diode BYW Stepper driver board with L297 L6203 l6203 motor driver byw 91 MULTIWATT11 L6203 CB00T1 L6201-L6202 L6201/2
Abstract: u t vo lta ­ ge (200V//¿sec is generally used). A diode (BYW 98) is connected between each , 25 30 35 40 45 \% ) 5 {V Fig. 4 - T ypica l diode behaviour in synchronous re ctifica tio n , trin sic diode between th e ir source and drain th a t can operate as a fast freewheeling diode in , when the voltage reaches the diode voltage it is clamped to its characteristic. When the E N A B L E in p u t is low, the POWER MOS is O FF and the diode carries all o f the recirculation current. The -
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100KH

diode BYW 66

Abstract: by 244 dioda the value VrwM< The BYW 07-150 A diode is able to withstand acci« dental reverse overvoltagef in the , S G Sâ'"THOMSON O THOMSON-CSF DIVISION SEMICONDUCTEURS DISCRETS BYW 07- BYW G7 15QA HIGH , ABSOLUES D'UTILISATION BYW 07*50 BYW 07-100 BYW 07-150 BYW 07-200 BYW ^ 07-150 A Avafenche Repetitive , BYW 07-50 200 - BYW 07-150 A 59C 02211 üT- ELECTRICAL CHARACTERISTICS . CARACTÉRISTIQUES , =25°C 30 mA T(vjj = 150 °C V-VnilM BYW 07-60 150 V 40 BYW 07-200 V VF 0,84 V T(vj( = 150 °C ' IF
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diode BYW 66 by 244 dioda BYW 90 diode BYW 85 diodes byw diode BYW 60 CB34I 0DQE51S 07CAN

Diode LT 9250

Abstract: diode BYW 92 rv v M * The BYW 92*150 A diode is able to w ithstand accl* dental reverse overvoltages in the , SEM ICONDUCTEURS DISCRETS BYW 92-50^200, (R) BYW 92-150 A f (R) HIGH EFFICIENCY FAST RECOVERY , * Junction temperature Température de /on ctio n BYW 92-50, (R) BYW 82-100, m i BYW 92-156, (R) BYW 92-200, (R) BYW 92-150/U H ) avilincfce \ Vrrm V RSM p RSM(1i f FRM 1FIRMS) ·F(A V ) fsm , ) BYW 92-1S0 A (tp = 80 p i lin u s o lt& l) July 19831/6 50, rue Jean-Pierre Timbaud * B.P. 5 F ·
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Diode LT 9250 diode BYW 92 LT 9250 diode lt 0236 5 amp diode byw 92-200 diode BYW 92-200 00G2252 CB-33 D0G53S7 CB-34 CB-197 7T5TE37

diode BYW 92

Abstract: 5 amp diode byw 92 SUPERSWITCH BYW 92-50-^200, (R) BYW 92-150 A, (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , LIMITES ABSOLUES D'UTILISATION BYW 92-59, IR) BYW 82*100, IB) BYW 92-150, (RI BYW 92-200, IR) BYW 92-150 , (1) BYW 92-150 A Up s 80 pi unufolthl) Controlled avalanche type 50, rue Jean-Pierre Timbaud - B.P , 4 BYW 92-50 ->- 200 - BYW 92-160 A 59C 02254 0T'03't7 0 to 20 30 40 IF(AV) FIGURE 1 : Pow , JF(A) 287 S G Sâ'"THOMSON SIC D | 7121237 D0022SS b I BYW 92-50 200 - BYW 92-150 A. 1B0 170 160
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5 amp diode byw 92 SA 9259 diode puissance 30 amp rms p2f diode P2F 6286s 0DG2252 7T2C1537 0QQ22S7

77150

Abstract: diode puissance 30 amp in excess of the value Vrwm- The BYW 77-150 A diode is able to withstand acci-.dental reverse , SUPERSWITCH BYW 77-50â'"200, (R) BYW 77-150 A, (R) high efficiency fast recovery rectifiers REDRESSEURS , ABSOLUES D'UTILISATION BYW 77H.IR) BYW 77-1(1, (RI BYW 77-150, (R) BYW 77-2M, (R) BYW 77-1HA.IR) inlmdw , ) BYW 77-160 A (tp s 80 jii sinusoidal) Controlled waltneh* typ« 50,' rue Jean-Pierre Timbaud - B.P. 5 , St-THOMSON 1 5TC D 1 7^237 Q00c?22ti 5 BYW 77:50-* 200 - BYW 77-150 A-Ve . s a . . 59C 02229 D T'O^'XÃ
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77150 diode BYW 76 BYW 77 high efficiency fast recovery diode byw BYW77 diodes byw 86 PIAVI51 BVW77

diode byw 81 200

Abstract: Diode BYW 59 SUPERSWITCH BYW 81-50-200, (R) BYW 81-150 A, (R) high efficiency fast recovery rectifiers REDRESSEURS , toc ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION BYW â'¢1-5*. (Kl BYW ihm. im BYW imh.ffl) BYW iimffli â YW ti-iNA.ni antenata S Repetitive peak reverte voltage Tension , -40+160 -40 + 160 -40 + 160 -40 + 160 -40+160 OC ) 111 BYW 81-150 A ( tp = 80 fit-slnusolMal I Contrail , ¡5247 7 BYW 81-50 -+ 200.- BYW 81-150 A f; 59 C 02 24f D ~T'03 '/ 7 electrical characteristics -
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1200C diode byw 81 200 Diode BYW 59 Diode BYW 56 Q002 diode BYW 81 8150 diode D04IC8
Abstract: BYW 27-50.BYW 27-1000 Axial lead diode Standard silicon rectifier diodes Absolute Maximum Ratings Symbol Conditions Values Units Characteristics Symbol Conditions BYW 27-50.BYW 27-1000 Values Units Forward Current: 1 A Reverse Voltage: 50 to 1000 V Features Mechanical Data 1) 2) Dimensions in mm 3) 1 10-04-2006 SCT © by SEMIKRON BYW 27-50.BYW 27-1000 Fig. 1 Forward characteristics ( typical values ) Fig. 2 Rated forward current vs. ambient SEMIKRON
Original

Diode BYW 56

Abstract: diode BYW 19 value Vrw m * BYW 81-150 A diode is able to withstand ac«t> dental reverse overvoltages in the avalanche , DISCRETS BYW 81-50- 200, (R) BYW 81-150 A. (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , da /onction VRRM BYW 11-51,01} 50 56 >rw BYW 11-IU.tR) 160 165 BYW BYW S12f»,(M H , Junctfon-caw thermal resistance Résistance thermittue jonction boîtier V {1} BYW 81-150 A ( tp = 80 p» - , \T H O M S O N S G S-THQMSON . SIC D I I 7151537 2247 7 BYW'81'60 -» 200.- BYW 81* 15ÒA "
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diode BYW 19 0224S byw+36+v 2791T CB-227 7151S37 CB-428 CB-425 CB-262 CB-19

BYW 90

Abstract: dioda repetitive turget In excett of tha value Vrvvm- The BYW 78-150 A diode it able to withttand accidental revena , SUPERSWITCH 59C BYW 78-50+200, (R) BYW 78-150 A, (R) HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS , ABSOLUTE RATINGS (LIMITING VALUES) VALEURS LIMITES ABSOLUES D'UTILISATION BYW 71-50,1111 â YW 7t-1M,(RI , * ¡onction boithr â"¢x "thll-cl 1 1 1 1 1 s KM V (11 BYW 78-160 AI tp a 80 M« - tlnutoWel I , 268 S G S-THOMSON SIC D I 712=1537 []a0223b 2 BYW 78-50 -» 200 - BYW 78-150 A FIGURE 1 : Powir I
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dioda l200c soae ZTF 160 I71H1237

diode BYW 31 200

Abstract: 77150 avoid all repetitive surges In excess of the value VpvVM' The BYW 77*150 A diode i* able to , DISCRETS BYW 77-50-200, (R) BYW 77-150 A, (R) HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF , resistance Résistance therm ique /onction b o îtie r V (1) BYW 77-150 A (tp s 80 j ii BYW 77-M.tR) BYW 77-1H.fR) BYW 77*150, IR) BYW 77-2M, (R) BYW 7M 5UM R} ·vtlM dw \ Vrrm V rsm pRSM m *FRM , S-THOMSON S'îC D TTETEB? Ü002230 1 r 59C 0 2 2 30 Dt - o j & ï BYW 77-60 - 2 0 0
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diode BYW 31 200 QGGE22 000E35 CB-244

transistor S 8050

Abstract: 8A273 rvVM* The BYW 80*150 A diode is able to withstand eed* dental reverse overvoltages in the avalanche , SEMICONDUCTEURS DISCRETS BYWB05Q 200 BYW 80 150A HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S , Dissipation de puissance CB* Junction temperature T (vj> Tampérature de /onction V BYW 80-50 BYW ' 80-100 BYW 60-160 BYW 80-200 BYW 80-150 A avalanche 160 - 450 100 20 12 100 20 \ 60 56 , J Junction-cata thermal resistance Résistance thermique ¡onction boîtier U l BYW 80-160 A (tp s
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transistor S 8050 8A273 BYW60 ggqb2 150TV transistor 8050 d 130OC

diode BYW 66

Abstract: DIODE DO-220 network would avoid all repetitive surges in excess of the value Vrwm- The BYW 80-150 A diode is able to , SUPERSWITCH BYW SO SO - BYW80150A HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A HAUT , values) VALEURS LIMITES ABSOLUES D'UTILISATION BYW 80-50 BYW ' 80-100 BYW 80-160 BYW 80-200 BYW 80-160 A , ! Tél. : (1) 788-50-01 Telex '610560 F ♦ «^wi^ÃnHw s G S-THQMSQN SIC D I 7=12^53? QQGazm BYW 80-50 -* 200 - BYW 80-150 A 59C 02241 D~T*03*n electrical characteristics-caractéristiques Ã
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DIODE DO-220 BYW 26 8050 2D C ICB227I QQQ2243 C 8050 d Q00S2M5

Diode BYW 56

Abstract: tfk 731 BYW 52 E8 BYW 56 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter , StoÃstrombellastbarkeit Die elektrischen Daten entsprechen den Dioden: BYW 52 1 N 5059 BYW 53 1 N 5060 BYW 54 1 N 5061 BYW 55 1 N 5062 Features: â'¢ Controlled avalanche characteristics â'¢ Hermetically sealed glass , current loading Electrically data resemble the diodes: BYW 52 1 N 5059 BYW 53 1 N 5060 BYW 54 1 N 5061 BYW 55 1 N 5062 Abmessungen in mm Dimensions in mm 2-FARBRING 2.COLOUR RING KATHODE 1. FARBRING
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BYW52 tfk 731 BYW56 BYW 56 V BYW 52 TFK 03 diodes N5059 561/0875A

diode BYW 85

Abstract: diodes byw 86 BYW 82 ST BYW 86 Silizium-Mesa-Dioden Silicon-Mesa-Diodes Anwendungen: Leistungsgleichrichter , loading Die elektrischen Daten entsprechen den Dioden: Electrically data resemble the diodes: BYW 82 1 N 5624 BYW 82 1 N 5624 BYW 83 1 N 5625 BYW 83 1 N 5625 BYW 84 1 N 5626 BYW 84 1 N 5626 BYW 85 1 N 5627 BYW 85 1 N 5627 Abmessungen in mm Dimensions in mm 2.FARBRING Absolute Grenzdaten Absolute , voltage Fig. 1 BYW 82 BYW 83 BYW 84 BYW 85 BYW 86 ^R = ^RRM ^R = ^RRM UR = ^RRM ^R = ^RRM ^R = ^RRM
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BYW89 N5626 813BB diode BYW 200 BYW 89 N5625

BYW 64 bridge rectifier

Abstract: diode BYW 64 BYW 27-50.BYW 27-1000 Silizium Gleichrichter Silicon Rectifier 1A Nominal current Nennstrom 50. 1000 V Repetitive peak reverse voltage Periodische Spitzensperrspannung DO , Spitzensperrspannung VR M [V] R Type Typ BYW BYW BYW BYW BYW BYW BYW Surge peak reverse voltage , auf Umgebungstemperatur gehalten werden 24 â  1001^54 ODGÃIBE SDÃ â  BYW 27-50.BYW , [mm]) Diode MiniMelf 0 1.6x3.5 Diode Melf 0 2.5x5 Diode Fiatpack 3.7 x 5.4 x 2.3
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BYW 64 bridge rectifier diode BYW 64 DO-41 UL94V-0 R0D1RS14 000017S

aval

Abstract: ) C o ntrolled Avalancha type mex R th ll-c) BYW 07*50 BYW 07*100 BYW 07-150 BYW 07-200 BYW 07-150 A Avalanche A Vrrm V rsm Pr S M ÎIÏ *FRM >F(RMSÏ >F(AV) fsm P 50 55 - 100 110 , S G S-THOMSON S^C D 11 7 ^ 2 3 7 ÜQQE511 f l BYW 07-50 -> 200 - BYW 07-150 A 59C 0 2 2 1 , NDITIO NS DE MESURE T ( v i ï = 2 5 oC ^ -V rrM byw lR 07-50 150 V BYW 07-200 V T(vj( = 150 , -# 2 ,/ BYW 07-50 -* 200 - BYW 07-150 A FIG U R E 1 *, Power losw * versus » «fa g« currant F
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aval CB-101
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