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GBU8J GeneSic Semiconductor Inc DIODE BRIDGE 600V 8A GBU visit Digikey Buy
934068322116 NXP Semiconductors DIODE GEN PURP 600V 8A visit Digikey Buy
GBJ806-F Diodes Incorporated Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBJ, 4 PIN visit Digikey Buy
GBU806 Diodes Incorporated Bridge Rectifier Diode, 1 Phase, 8A, 600V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, GBU, 4 PIN visit Digikey Buy
DSR8F600 Diodes Incorporated Rectifier Diode, 1 Phase, 1 Element, 8A, 600V V(RRM), Silicon, TO-220AC, GREEN, PLASTIC PACKAGE-2 visit Digikey Buy
DSEI8-06AS-TUBE IXYS Corporation DIODE FRED 600V 8A TO-263 visit Digikey Buy

diode 8a 600v

Catalog Datasheet MFG & Type PDF Document Tags

CMPFCD86GN220

Abstract: CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) ORDERING INFORMATION Part Number Temperature Range Package , .2 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2010/05/21 Rev1.2 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V , Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and
Champion Microelectronic
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CMPFCD86GN220 UL94V-0 MIL-STD-202

diode 8a 600v

Abstract: CMPFCD86XN220 CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) ORDERING INFORMATION Part Number Temperature Range Package , Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2009/12/02 Rev1.1 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE , Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and (millimeters
Champion Microelectronic
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diode 8a 600v CMPFCD86XN220

diode 8a 600v

Abstract: CMPFCD86 CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V , Diode (8A/600V) TYPICAL CHARACTERISTICS 2010/10/28 Rev1.3 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION TO-220AC Dimensions in inches and , (8A/600V) TO-220FP Dimensions in inches and (millimeters) SMC Dimensions in inches and
Champion Microelectronic
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diode 8a 600v

Abstract: CMPFCD86 CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS 2009/04/30 Rev1.0 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) Application Circuit PACKAGE DIMENSION TO , CMPFCD86 PFC Diode (8A/600V) TO-220FP Dimensions in inches and (millimeters) SMC Dimensions in , CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves
Champion Microelectronic
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3 phase pfc diode cmc F 4
Abstract: CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr = 20ns , . 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V , Diode (8A/600V) TYPICAL CHARACTERISTICS 2011/09/13 Rev1.6 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION TO-220AC Dimensions in inches and , Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion Champion Microelectronic
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CM6805

Abstract: CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns , .7 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V) MAXIMUM RATINGS AND , Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS Figure 2. Typical Reverse , Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION 2013/12/06 Rev1.7 Champion Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion
Champion Microelectronic
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CM6805 CMPFCD86XN220FP CMPFCD86GN220FP CMPFCD86XN252 CMT14N60 CM65XX CM68XX

600V igbt dc to dc buck converter

Abstract: diode 8a 600v with Anti-Parallel Hyperfast Diodes 15A, 600V Stealth Diode 8A, 600V Stealth Diode Schottky Barrier , 2.5V Specified PowerTrench; BGA MOSFET 33A, 600V StealthTM; Diode NPN Multi-Chip General Purpose , Anti-Parallel Hyperfast Diode 600V SMPS Series N-Channel IGBT ISL9R1560PF2 ISL9R860PF2 MBRA3045N , , SMPS Series N-Channerl IGBT with Anti-Parallel Hyperfast Diode 600V; SMPS Series N-Channel IGBT 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V; SMPS Series N-Channel IGBT 600V
Fairchild Semiconductor
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600V igbt dc to dc buck converter FAN4803 24v output power supply 300khz 600V mosfet driver IC 600v 20 amp mosfet FQPF9N50C equivalent FQPF10N60C equivalent FS6X1220RT FSAT66 FDC796N/FDC3616N FDZ299P FXL34 QTLP673C-R/E/O/Y/IB/IC/IG

diode 8a 600v

Abstract: 4 pin optocoupler Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 15A, 600V StealthTM Diode 8A, 600V StealthTM Diode N-Channel Enhancement Mode Field Effect Transistor P-Channel 2.5V Specified PowerTrench® MOSFET , 400-V to 1000-V operation; 1.5-A to 8-A ratings Comprehensive New Product List Analog FAN1537 , Schottky Diode Integrated Load Switch 30V N-Channel Logic Level PowerTrench® MOSFET 30V N-Channel , PowerTrench® MOSFET P-Channel 2.5V Specified PowerTrench® MOSFET with Schottky Diode Dual N-Channel 2.5V
Fairchild Semiconductor
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4 pin optocoupler 4PIN optocoupler bidirectional optocoupler toshiba IGBT gate optocoupler driver for a buck converter logic level complementary MOSFET hma121 SE-171 247TM

NTC 5D-15

Abstract: NTC 5D15 , 600V, SuperFET 1W, 18V, Zener Diode 1A, 400V Glass Passivated High-Efficiency Rectifier 1A, 100V Small-Signal Diode 1A, 100V Small-Signal Diode 8A, 600V, General-Purpose Rectifier 3A, 600V, General-Purpose , ,68m F,630Vdc TH101 ,5D15 D105 600V 8A DC OUTPUT R113 3.9M R109 47 Q101 FCPF 20N60 R108 D103 , /250V NTC 5D-15 Bridge Diode 15A, 600V Line Filter 23mH Transformer EER3124 ZNR 10D471 Ae , rating of the power switch or diode. This can seriously damage the power switch and result in burn down
Fairchild Semiconductor
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FAN7930C NTC 5D-15 NTC 5D15 fan7930 ZNR101 EER3124N FAN7930 MS-012 SOIC127P600X175-8M M08AREV13

FAN7930B

Abstract: NTC 5D-15 1N4148 Note 20A, 600V, SuperFET 1W, 18V, Zener Diode 1A, 400V Glass Passivated High-Efficiency Rectifier 1A, 100V Small-Signal Diode 1A, 100V Small-Signal Diode 8A, 600V, General-Purpose Rectifier 3A, 600V, General-Purpose Rectifier Diode IC101 FAN7930B CRM PFC Controller Fuse Box , 5D-15 Bridge Diode 15A, 600V Line Filter © 2010 Fairchild Semiconductor Corporation FAN7930B · Rev , current, that exceeds the current rating of the power switch or diode. This can seriously damage the power
Fairchild Semiconductor
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capacitor .33uf 250v polyester FAN7530 schematic diagram fan7530 znr 10d471 zener diode 1N4746 znr 10k 112

Triac to220

Abstract: Thyristor purpose thyristor, 600V, 8A, TO-220 package General purpose thyristor, 600V, 8A, TO-220F package Thyristor , inductive load, 600V, 8A, TO-220 package Triac for inductive load, 600V, 8A, TO-220F package Page 64 64 , , 600V, 5A×4 circuits , SIP12Pin package Triac array, 400V, 1.2A×3 circuits, SIP8Pin package Triac array , purpose thyristor, 400V, 3A, TO-220F package General purpose thyristor, 600V, 3A, TO-220 package High sensitivity thyristor, 600V, 3A, TO-220 package General purpose thyristor, 600V, 3A, TO-220F package General
Sanken Electric
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Triac to220 Thyristor triac 400v 16a triac 600v 25a TRIAC 25a 600v Triac 3a 600v ET013 ET015 ET020 SLA0201 STA203A STA221A

diode 8a 600v

Abstract: FFP08D60L2 8A, 600V, DeuxpeedTM Diode June 2009 FFP08D60L2 Features · Duexpeed Recovery , or separate heatsink. 8A, 600V, DeuxpeedTM Diode Applications · Boost Diode in Continuous Mode , www.fairchildsemi.com FFP08D60L2 8A, 600V, DeuxpeedTM Diode Electrical Characteristics TC = 25oC unless otherwise , Rev. B 2 www.fairchildsemi.com FFP08D60L2 8A, 600V, DeuxpeedTM Diode Typical Performance , www.fairchildsemi.com FFP08D60L2 8A, 600V, DeuxpeedTM Diode Mechanical Dimensions Dimensions in Millimeters
Fairchild Semiconductor
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F08D60L2

f08s60sn

Abstract: diode 8a 600v FFP08S60SN 8A, 600V, STEALTHTM II Diode May 2008 FFP08S60SN Features · Stealth recovery Trr , Reliability · Improved dv/dt Capability · RoHS Compliant tm 8A, 600V, STEALTHTM II Diode The FFP08S60SN , www.fairchildsemi.com FFP08S60SN 8A, 600V, STEALTHTM II Diode Mechanical Dimensions TO220 2L Dimensions in , FFP08S60SN 8A, 600V, STEALTHTM II Diode www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation , Semiconductor Corporation FFP08S60SN Rev. A 1 www.fairchildsemi.com FFP08S60SN 8A, 600V, STEALTHTM II
Fairchild Semiconductor
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f08s60sn

diode 8a 600v

Abstract: diode T B 8A FFP08S60S 8A, 600V, STEALTHTM II Diode January 2007 FFP08S60S Features · Stealth recovery , High Reliability · Avalanche Energy Rated · RoHS Compliant tm 8A, 600V, STEALTHTM II Diode The , FFP08S60S 8A, 600V, STEALTHTM II Diode Electrical Characteristics T Parameter VF 1 C = 25°C unless otherwise noted Conditions IF = 8A IF = 8A VR = 600V VR = 600V IF =1A, di/dt = 100A/µs, VR , Corporation FFP08S60S Rev. B 2 www.fairchildsemi.com FFP08S60S 8A, 600V, STEALTHTM II Diode
Fairchild Semiconductor
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diode T B 8A

k08t120

Abstract: k08t12 function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) diF/dt, DIODE CURRENT SLOPE Figure 24. Typical reverse recovery charge as a function of diode current slope (VR=600V, IF=8A , reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in , current as a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) Power , E = 15V, I C = 8A T j = 25 ° C T j = 12 5 ° C T j = 15 0 ° C Diode forward voltage VF V G E = 0V, I
Infineon Technologies
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k08t120 k08t12 BUP30 IKW08T120 BUP305D K08T120 PG-TO-247-3-1 Q67040-S4514
Abstract: diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) TJ=25°C 20A 15A , Figure 25. Typical reverse recovery current as a function of diode current slope (VR=600V, IF=8A , of reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test , Collector-emitter saturation voltage VCE(sat) Diode forward voltage VF V V G E = 15V, I C = 8A V G , - 200 - ns Diode reverse recovery charge Qrr V R = 6 00V, I F = 8A, - 2.3 Infineon Technologies
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k08T120

Abstract: a function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) 400A/µs , function of diode current slope (VR=600V, IF=8A, Dynamic test circuit in Figure E) 5A TJ , fall of reverse recovery current as a function of diode current slope (VR=600V, IF=8A, Dynamic test , voltage VCE(sat) Diode forward voltage VF V V G E = 15 V, I C = 8A V G E = 0V , I F = 8 , °C , - 80 - ns Diode reverse recovery charge Qrr V R = 60 0 V , I F = 8A , - 1.0
Infineon Technologies
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PG-TO-247-3

solar inverter circuit

Abstract: Solar inverter power module Part ­No Voltage Boost H Bridge Application FZ06BIA045FH 600V 45m 16A SiC diode 45m 75A 8A SiC diode non-isolated solar FZ06BIA045FH01 600V 45m 16A SiC diode 45m , Application FZ06BIA045FH02 600V 45m 16A SiC diode 45m 75A 8A SiC diode non-isolated solar Part ­No Voltage Boost H Bridge Application FZ06BIA083FI 600V 45m 16A SiC diode , Application FZ06RIA045FH 600V fast 45m 75A 8A SiC diode isolated solar (secondary
Vincotech
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solar inverter circuit Solar inverter power module 3kw inverter solar inverter pcb diode bridge 16A 600v 75a FZ06RIA045FH01 ISO9001 TS16949
Abstract: 20V â'" 200V Diode Schottky 30A 20V â'" 45V Diode Schottky 40A 20V â'" 200V Diode Superfast 8A 200V â'" 600V Diode Superfast 8A 200V â'" 600V Diode Superfast 10A 200V â'" 600V Diode Superfast 16A 200V â'" 600V Diode Superfast 16A 200V â'" 600V Diode Superfast 30A 200V â'" 600V Diode Superfast , ) MSL Rating 1 Description Diode Schottky 8A 20V â'" 200V Diode Schottky 8A 20V â'" 200V Diode Schottky 10A 20V â'" 200V Diode Schottky 10A 20V â'" 200V Diode Schottky 16A 20V â'" 200V Diode Schottky Won-Top Electronics
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SB820D SB8200D SB820DC SB8200DC SB1020D SB10200D
Abstract: Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) IC = 800A, VCE = 600V VGE = ±15V, RG = 1,"¦, Tvj = 25°C td,on VGE = ±15V, RG = 1,"¦, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 800A, VCE = 600V VGE = ±15V, RG = 1,"¦, Tvj = 25°C tr VGE =  , ) IC = 800A, VCE = 600V VGE = ±15V, RG = 1,"¦, Tvj = 25°C td,off VGE = ±15V, RG = 1, , Grenzlastintegral der Diode I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C Isolations-Prüfspannung Eupec
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