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diode 300v

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Abstract: HITACHI 2SD2323- Silicon NPN Triple Diffused High Voltage Switching, Igniter Feature * Built-in I ligh voilage zener diode (300V) â'¢ High speed switching Absolute Maximum Ratings (Ta = 25°C) Item Symbol Hating Unit Collector to base voltage vceo 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current ¡C 6 A Diode Current Id'1 6 A Collector peak current ic (peak) 10 A Collector power dissipation Pc1 30 W Junction temperature Tj 150 °C Storage -
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2SD2323 sa1 Zener diode Scans-009514 igniter 2SD2323--
Abstract: RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack , SUPER HIGH SPEED RECTIFIER(300V/12A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER(200V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER(300V/20A , max 12A max TO-3PF 3 300V max 12A max TO-3PF 3 200V max 20A max TO-3P(FE)/SC-65(EIAJ) 3 -
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ESAC93-02 ESAC93M-03R ESAD92-02 ESAD92-03 ESAD92M-03R KP923C2 SC-67 LOW LOSS SUPER HIGH SPEED RECTIFIER Diode 400V 20A full wave rectifier diodes power Diode 200V 10A fast recovery diode 400v 5A ESAB92-02 ESAC92-02 ESAC93M-02R
Abstract: RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack , SUPER HIGH SPEED RECTIFIER(300V/12A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER(200V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER(300V/20A , max 12A max TO-3PF 3 300V max 12A max TO-3PF 3 200V max 20A max TO-3P(FE)/SC-65(EIAJ) 3 -
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ESAD92M-02R PA905C6 power Diode 400V 20A Rectifier Diode 20A EIAJ SC67 diode 300v 20a high voltage rectifier diode KS923C2 MS906C2 MS906C3 PA905C4
Abstract: Ultrafast diode C3 Ultrafast common cathode diode 300V 300V 1200V 1200V 1200V 1200V 1200V 30A 2 x 30A , SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B Back of Case Cathode diode features a triple , Parameters VR VF IF trr (max) (typ) (max) (max) 600V 2.2V 25A 35ns APPLICATIONS · Freewheeling Diode for , Clamping Diode · Snubber Diode · Fast Switching Rectification ABSOLUTE MAXIMUM RATINGS (Tcase = 25 Semelab
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10 AMP 1200V RECTIFIER DIODE 600V 25A Ultrafast Diode 1200v diode to247 smps 450W ultrafast diode 10a 300v 1200v 30A to247 SML30SUZ03S SML30SUZ03SC SML30SUZ12B SML30SUZ12BC SML30SUZ12JD SML30SUZ12S
Abstract: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A 49mâ"¦ â , Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High , /W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS , 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 IXYS
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69N30P
Abstract: Switching Diode 300V DIODE SUPER FAST 1A 400V SMA MOSFET N-CH 600V 4A DPAK TVS Bidirectional Diode 600W Diodes
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AL9910EV10 120VAC AL9910
Abstract: IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A 49m 200ns , Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy , RthJC RthCS TO-247 (IXFH) Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test , Voltage Drop of Intrinsic Diode 50 60 70 80 90 Fig. 10. Gate Charge 10 180 9 IXYS
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Abstract: Switching Diode 300V DIODE SUPER FAST 1A 400V SMA MOSFET N-CH 600V 4A DPAK TVS Bidirectional Diode 600W Diodes
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230VAC
Abstract: IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A 40m , Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance , Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD , Diode Fig. 10. Gate Charge 240 10 VDS = 150V 200 I D = 44A 8 160 VGS - Volts IXYS
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88N30P 88N30
Abstract: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = = ï'£ ï'£ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A 73m  200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to , -247 & PLUS220) 0.25 Source-Drain Diode TJ = 25ï'°C Unless Otherwise Specified) IS ISM VSD QRM , . Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 160 10 VDS = 150V 9 140 I IXYS
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PLUS220SMD 52N30P
Abstract: Diode Ultra-fast Diode, 300V 2X60A ISOTOP Ultra-fast Diode, 300V 2X100A ISOTOP High Frequency Secondary Rectifier Ultra-fast Diode, 300V 2X15A TO-247 Ultra-fast Diode, 300V 2X30A TO-247 Ultra-fast Diode, 300V 2X30A ISOTOP Ultra-fast Diode, 300V 8A TO-220AC Electronic Circuit Breaker 15V Triple , . Z: Zener diode to set the threshold voltage. D: Diode for reverse conduction. R: 2kresistor , mains is stored into the capacitor C. For that, the AC voltage is rectified by the diode Ds. Phase 2 STMicroelectronics
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AVS10CB1 bul49d equivalent 12B1 ZENER 10A triac control PWM battery Charger thyristor battery charger 24v 220v ac to 5v dc 100w smps AMST62APPST/1 AVS1ACP08 BUL49D EFS11 EFS21
Abstract: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V , Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance , -247 TO-264 0.21 0.15 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25 , Intrinsic Diode Fig. 10. Gate Charge 240 10 VDS = 150V 200 I D = 44A 8 160 VGS - IXYS
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Abstract: J-TYPE, LED-LN1251C-RED PANASONIC, LN1251C-TR 10 2 D2, DLED3 DIODE, 300V, 250mA, SOD523 DIODES/ZETEX, BAS521-7 11 1 D1 DIODE, ZENER, 68V, 1.5W, SMA-DIODE CENTRAL SEMI., CMZ5945B , DEMO MANUAL DC2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC®4364 surge stopper with ideal diode in a 12V, 1A application , an ideal diode. Further, the output is protected against backfeeding. The output may be driven â Linear Technology
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ISO-7637-2 LTC4364 LTC4364-1 DC2027A-A LTC4364-2 DC2027A-B
Abstract: From Zetex SXTA42 From Siemens SXTA42 16V Zener Diode SOT-23 Diode 300V SOT-23 From Central , From Zetex ZTX857 From Samsung KSC2330 16V Zener Diode Diode 300V 1N4004 Cap 0.1uF 50V -20/+80% , and Caller ID circuit can be built using low cost surface mount (SOT-23) 300V transistors. The , ²952C SSOP-28 K²934L or K²935U SMD1206 Sidactor 300V SMD From Teccor Electronics P2600SB NPN 300V , Samsung KST42 PNP 300V Transistor 330mW SOT-23 From Motorola MMBTA92L From Zetex FMMTA92 From Krypton Isolation
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73M2901 K934 CSP1034 Krypton isolation k952 TRANSISTOR SMD MARKING CODE R8 smd diode code GU 950G/K 950GU 90/56K K2934L UL1950 K2935U/
Abstract: BSS71CSM NPN LCC1 200V 0.5A 40 250 10V / 30mA 50MHz 0.5W BSS73CSM NPN LCC1 300V 0.5A 40 250 , 90MHz 0.5W BSX36CSM PNP LCC1 40V 0.5A 40 10V / 10mA 100MHz 0.36W FMMT42CSM NPN LCC1 300V , PNP LCC1 300V 0.5A 25 10V / 30mA 50MHz 0.65W HP5082-0180CSM LCC1 V / 0mA HP5082-2800CSM LCC1 V / 0mA SMLA42CSM NPN LCC1 300V 0.5A 40 10V / 30mA 50MHz 0.35W ZT284CSM PNP LCC1 45V , 45V 45V 45V 45V 40V 45V 25V 32V 160V 250V 300V 60V 160V 200V 300V 150V 0.05A 0.1A -
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2C444 Diode 400V 5A lm1083 transistor 2n1208 BZY55C bc109 spice IRF9024 2C415 2C425 2C746 2N1131L 2N1132
Abstract: required, Shindengen has focused on high-speed and soft recovery in the 300V low-loss diode introduced , package details Password Vol.03-21-e Commercialization of a Ultra-high Speed 300V Low-loss Diode for , 0 0.5 1 1.5 V F (V) SF20LC30SM (20A 300V low-loss diode, new product) SF20LC30 (20A 300V low-loss diode, previous product) Figure. 1 Comparison of forward characteristics Password Vol.03-21-e 0.001 0 50 100 150 200 250 300 V R (V) SF20LC30SM (20A 300V low-loss diode, new Shindengen Electric
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SF10LC30SM df20lc30 shindengen m FTO-220 DF10LC30S STO-220 DF20LC30S
Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage tP= 1ms T C= 45°C T C= 25°C tP= 1ms, T C , / Characteristic values Transistor / Transistor IC= 200A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on , = 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 1,5, T vj= 25°C VGE= ±15V, RG= 1,5, T vj= 125°C IC= 200A, VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time Eupec
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op 9115
Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage tP = 1 ms T C = 70°C T C = 25 °C tP = 1 ms , on delay time (inductive load) IC = 30A, VCC = 300V VGE = ±15V, RG = 6,8, T vj = 25°C VGE = ±15V, RG = 6,8, T vj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 30A, VCC = 300V , . Last) turn off delay time (inductive load) IC = 30A, VCC = 300V VGE = ±15V, RG = 6,8, T vj = 25°C VGE = Eupec
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Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage tP= 1ms T c= 75°C T c= 25°C tP= 1ms, T c , IC= 75A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,0, T vj= 25°C VGE= ±15V, RG= 3,0, T vj= 125°C IC= 75A, VCC= 300V Anstiegszeit (induktive , , VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE= ±15V, RG= 3,0 Eupec
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Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tP= 1ms TC= 35°C TC= 25°C tP= 1ms, TC , / Characteristic values Transistor / Transistor IC= 10A, V CC= 300V Einschaltverzögerungszeit (ind. Last) turn on , = 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 56 , Tvj= 25°C VGE= ±15V, RG= 56 , Tvj= 125°C IC= 10A, V CC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time Eupec
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