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SDURD530TR SMC Diode Solutions DIODE GEN PURP 300V DPAK visit Digikey Buy
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diode 300v

Catalog Datasheet MFG & Type PDF Document Tags

sa1 Zener diode

Abstract: diode 300v HITACHI 2SD2323- Silicon NPN Triple Diffused High Voltage Switching, Igniter Feature * Built-in I ligh voilage zener diode (300V) â'¢ High speed switching Absolute Maximum Ratings (Ta = 25°C) Item Symbol Hating Unit Collector to base voltage vceo 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Collector current ¡C 6 A Diode Current Id'1 6 A Collector peak current ic (peak) 10 A Collector power dissipation Pc1 30 W Junction temperature Tj 150 °C Storage
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OCR Scan
2SD2323 sa1 Zener diode diode 300v Scans-009514 igniter 2SD2323--

SC-67

Abstract: LOW LOSS SUPER HIGH SPEED RECTIFIER RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack , SUPER HIGH SPEED RECTIFIER(300V/12A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER(200V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER(300V/20A , max 12A max TO-3PF 3 300V max 12A max TO-3PF 3 200V max 20A max TO-3P(FE)/SC-65(EIAJ) 3
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ESAB92-02 ESAC92-02 ESAC93-02 ESAC93M-02R ESAC93M-03R ESAD92-02 SC-67 LOW LOSS SUPER HIGH SPEED RECTIFIER Diode 400V 20A fast recovery diode 400v 5A full wave rectifier diodes power Diode 200V 10A

Diode 400V 20A

Abstract: power Diode 400V 20A RECTIFIER(200V/20A) Low loss fast recovery diode (300V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW , DIODE LOW LOSS SUPER HIGH SPEED DIODE LOW LOSS SUPER HIGH SPEED DIODE 3 300V max 5A max T-pack , SUPER HIGH SPEED RECTIFIER(300V/12A) LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER LOW LOSS SUPER HIGH SPEED RECTIFIER(200V/20A) LOW LOSS SUPER HIGH SPEED RECTIFIER(300V/20A , max 12A max TO-3PF 3 300V max 12A max TO-3PF 3 200V max 20A max TO-3P(FE)/SC-65(EIAJ) 3
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PA905C6 power Diode 400V 20A Rectifier Diode 20A EIAJ SC67 diode 300v 20a low power loss rectifier ESAD92-03 ESAD92M-02R ESAD92M-03R KP923C2 KS923C2 MS906C2

10 AMP 1200V RECTIFIER DIODE

Abstract: 1200v diode to247 Ultrafast diode C3 Ultrafast common cathode diode 300V 300V 1200V 1200V 1200V 1200V 1200V 30A 2 x 30A , SML25EUZ06B Enhanced Ultrafast Recovery Diode 600 Volt, 25 Amp TECHNOLOGY The planar passivated and enhanced ultrafast recovery SML 25EUZ06B Back of Case Cathode diode features a triple , Parameters VR VF IF trr (max) (typ) (max) (max) 600V 2.2V 25A 35ns APPLICATIONS · Freewheeling Diode for , Clamping Diode · Snubber Diode · Fast Switching Rectification ABSOLUTE MAXIMUM RATINGS (Tcase = 25
Semelab
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10 AMP 1200V RECTIFIER DIODE 1200v diode to247 600V 25A Ultrafast Diode smps 450W ULTRA fast rectifier diode 30A 200V anode common ULTRA fast rectifier diode 30A 200V cathode common SML30SUZ03S SML30SUZ03SC SML30SUZ12B SML30SUZ12BC SML30SUZ12JD SML30SUZ12S
Abstract: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFH69N30P IXFT69N30P = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A 49mâ"¦ â , Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High , /W Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS , 20 30 VGS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 50 60 70 80 IXYS
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69N30P

Offline High Brightness

Abstract: Switching Diode 300V DIODE SUPER FAST 1A 400V SMA MOSFET N-CH 600V 4A DPAK TVS Bidirectional Diode 600W
Diodes
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Offline High Brightness AL9910EV10 120VAC AL9910

diode 300v

Abstract: IXFH69N30P IXFH69N30P IXFT69N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 69A 49m 200ns , Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy , RthJC RthCS TO-247 (IXFH) Outline TO-247 0.21 °C/W Source-Drain Diode Symbol Test , Voltage Drop of Intrinsic Diode 50 60 70 80 90 Fig. 10. Gate Charge 10 180 9
IXYS
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Abstract: Switching Diode 300V DIODE SUPER FAST 1A 400V SMA MOSFET N-CH 600V 4A DPAK TVS Bidirectional Diode 600W Diodes
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230VAC

88N30

Abstract: IXFH88N30P IXFT88N30P IXFH88N30P IXFK88N30P PolarTM HiPerFETTM Power MOSFET VDSS ID25 = = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 88A 40m , Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance , Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) IS VGS = 0V ISM VSD , Diode Fig. 10. Gate Charge 240 10 VDS = 150V 200 I D = 44A 8 160 VGS - Volts
IXYS
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88N30P 88N30
Abstract: PolarTM Power MOSFETs HiPerFETTM IXFV52N30P IXFV52N30PS IXFH52N30P VDSS ID25 = = ï'£ ï'£ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V 52A 73m  200ns PLUS220 (IXFV) Symbol Test Conditions VDSS VDGR TJ = 25°C to , -247 & PLUS220) 0.25 Source-Drain Diode TJ = 25ï'°C Unless Otherwise Specified) IS ISM VSD QRM , . Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 160 10 VDS = 150V 9 140 I IXYS
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PLUS220SMD 52N30P

bul49d equivalent

Abstract: 12B1 ZENER Diode Ultra-fast Diode, 300V 2X60A ISOTOP Ultra-fast Diode, 300V 2X100A ISOTOP High Frequency Secondary Rectifier Ultra-fast Diode, 300V 2X15A TO-247 Ultra-fast Diode, 300V 2X30A TO-247 Ultra-fast Diode, 300V 2X30A ISOTOP Ultra-fast Diode, 300V 8A TO-220AC Electronic Circuit Breaker 15V Triple , . Z: Zener diode to set the threshold voltage. D: Diode for reverse conduction. R: 2kresistor , mains is stored into the capacitor C. For that, the AC voltage is rectified by the diode Ds. Phase 2
STMicroelectronics
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AVS10CB1 bul49d equivalent 12B1 ZENER 10A triac control PWM battery Charger thyristor battery charger 24v ST62T10B6_HWD AMST62APPST/1 AVS1ACP08 BUL49D EFS11 EFS21
Abstract: PolarTM HiPerFETTM Power MOSFET VDSS ID25 IXFT88N30P IXFH88N30P IXFK88N30P = = ≤ ≤ RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 300V , Standard Packages Fast Intrinsic Diode Avalanche Rated Low RDS(ON) and QG Low Package Inductance , -247 TO-264 0.21 0.15 °C/W °C/W Source-Drain Diode Symbol Test Conditions (TJ = 25 , Intrinsic Diode Fig. 10. Gate Charge 240 10 VDS = 150V 200 I D = 44A 8 160 VGS - IXYS
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Abstract: J-TYPE, LED-LN1251C-RED PANASONIC, LN1251C-TR 10 2 D2, DLED3 DIODE, 300V, 250mA, SOD523 DIODES/ZETEX, BAS521-7 11 1 D1 DIODE, ZENER, 68V, 1.5W, SMA-DIODE CENTRAL SEMI., CMZ5945B , DEMO MANUAL DC2027A LTC4364HDE-1, 2 12V Surge Stopper with Ideal Diode Description Demonstration circuit 2027A showcases the LTC®4364 surge stopper with ideal diode in a 12V, 1A application , an ideal diode. Further, the output is protected against backfeeding. The output may be driven â Linear Technology
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ISO-7637-2 LTC4364 LTC4364-1 DC2027A-A LTC4364-2 DC2027A-B

K934

Abstract: CSP1034 From Zetex SXTA42 From Siemens SXTA42 16V Zener Diode SOT-23 Diode 300V SOT-23 From Central , From Zetex ZTX857 From Samsung KSC2330 16V Zener Diode Diode 300V 1N4004 Cap 0.1uF 50V -20/+80% , and Caller ID circuit can be built using low cost surface mount (SOT-23) 300V transistors. The , ²952C SSOP-28 K²934L or K²935U SMD1206 Sidactor 300V SMD From Teccor Electronics P2600SB NPN 300V , Samsung KST42 PNP 300V Transistor 330mW SOT-23 From Motorola MMBTA92L From Zetex FMMTA92 From
Krypton Isolation
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73M2901 K934 CSP1034 Krypton isolation TRANSISTOR SMD MARKING CODE R8 k952 smd diode code GU 950G/K 950GU 90/56K K2934L UL1950 K2935U/

Diode 400V 5A

Abstract: lm1083 BSS71CSM NPN LCC1 200V 0.5A 40 250 10V / 30mA 50MHz 0.5W BSS73CSM NPN LCC1 300V 0.5A 40 250 , 90MHz 0.5W BSX36CSM PNP LCC1 40V 0.5A 40 10V / 10mA 100MHz 0.36W FMMT42CSM NPN LCC1 300V , PNP LCC1 300V 0.5A 25 10V / 30mA 50MHz 0.65W HP5082-0180CSM LCC1 V / 0mA HP5082-2800CSM LCC1 V / 0mA SMLA42CSM NPN LCC1 300V 0.5A 40 10V / 30mA 50MHz 0.35W ZT284CSM PNP LCC1 45V , 45V 45V 45V 45V 40V 45V 25V 32V 160V 250V 300V 60V 160V 200V 300V 150V 0.05A 0.1A
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2C444 Diode 400V 5A lm1083 transistor 2n1208 bc109 spice BZY55C IRF9024 2C415 2C425 2C746 2N1131L 2N1132

diode 300v 20a

Abstract: SF20LC30SM required, Shindengen has focused on high-speed and soft recovery in the 300V low-loss diode introduced , package details Password Vol.03-21-e Commercialization of a Ultra-high Speed 300V Low-loss Diode for , 0 0.5 1 1.5 V F (V) SF20LC30SM (20A 300V low-loss diode, new product) SF20LC30 (20A 300V low-loss diode, previous product) Figure. 1 Comparison of forward characteristics Password Vol.03-21-e 0.001 0 50 100 150 200 250 300 V R (V) SF20LC30SM (20A 300V low-loss diode, new
Shindengen Electric
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SF10LC30SM shindengen m df20lc30 FTO-220 DF10LC30S STO-220 DF20LC30S
Abstract: forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, tp = 10ms , 300V VGE = ±15V, RG = 6,8, Tvj = 25°C td,on VGE = ±15V, RG = 6,8, Tvj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 30A, VCC = 300V VGE = ±15V, RG = 6,8, Tvj = 25°C tr , (inductive load) IC = 30A, VCC = 300V VGE = ±15V, RG = 6,8, Tvj = 25°C td,off VGE = ±15V, RG = 6,8, Tvj = 125°C Fallzeit (induktive Last) fall time (inductive load) IC = 30A, VCC = 300V VGE = ±15V Eupec
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op 9115

Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage tP= 1ms T C= 45°C T C= 25°C tP= 1ms, T C , / Characteristic values Transistor / Transistor IC= 200A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on , = 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 1,5, T vj= 25°C VGE= ±15V, RG= 1,5, T vj= 125°C IC= 200A, VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time
Eupec
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op 9115
Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage tP = 1 ms T C = 70°C T C = 25 °C tP = 1 ms , on delay time (inductive load) IC = 30A, VCC = 300V VGE = ±15V, RG = 6,8, T vj = 25°C VGE = ±15V, RG = 6,8, T vj = 125°C Anstiegszeit (induktive Last) rise time (inductive load) IC = 30A, VCC = 300V , . Last) turn off delay time (inductive load) IC = 30A, VCC = 300V VGE = ±15V, RG = 6,8, T vj = 25°C VGE = Eupec
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Abstract: forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode I2t - value, Diode Isolations-Prüfspannung insulation test voltage tP= 1ms T c= 75°C T c= 25°C tP= 1ms, T c , IC= 75A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 3,0, T vj= 25°C VGE= ±15V, RG= 3,0, T vj= 125°C IC= 75A, VCC= 300V Anstiegszeit (induktive , , VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE= ±15V, RG= 3,0 Eupec
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