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Part Manufacturer Description Datasheet BUY
LT1460GCZ-2.51460 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LM385BZ-1.2 Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.235 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LM385BZ-2.5 Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LT1460GIZ-2.5#TR1460 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 2.5 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LT1460GCZ-10#TR1460 Linear Technology IC 1-OUTPUT THREE TERM VOLTAGE REFERENCE, 10 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices
LM385Z-1.2 Linear Technology IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 1.235 V, PBCY3, PLASTIC, TO-226, TO-92, 3 PIN, Voltage Reference visit Linear Technology - Now Part of Analog Devices

diode 226

Catalog Datasheet MFG & Type PDF Document Tags

QM20HA-HB

Abstract: V3F diode CHARACTERISTIC (DIODE) 2-26 A iW , collector reverse current ¡forward diode current} Junction temperature Storage temperature isolation voltage , open DC DC (forward diode current) Tc= 25ftC DC Peak value of one cycle of 60HU ,'half wavei R atng s , 0 A {diode forward voltage) lc*2 0 A . VcE=2.0V - " 1 1.5 `2 2.0 0.8 2.2 M S X /W JC/W "C/W J.IS _ Vcc=300V, tc=20A, IB i=120m A, -lB2=400m A -Transistor part Diode part Conductive grease
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lnk306pn

Abstract: RF1141 Department Document Number DER-226 Date February 16, 2010 Revision 1.0 Summary and , Jose, CA 95138 USA. Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER-226 5 V, 12 V , 9200 Fax: +1 408 414 9201 www.powerint.com Page 2 of 24 16-Feb-10 DER-226 5 V, 12 V Cooktop , Power Integrations Tel: +1 408 414 9200 Fax: +1 408 414 9201 www.powerint.com DER-226 5 V, 12 V , : +1 408 414 9201 www.powerint.com 0 105 o C Page 4 of 24 16-Feb-10 DER-226 5 V
Power Integrations
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diode BY 226

Abstract: DIODE RING QUAD PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style
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MA40430

Abstract: MA40483 PARASITICS FOR BROAD BAND DESIGNS Single Barrier Ring Quads Each Schottky barrier diode quad consists of , individual diode is in beam-lead form. The beam-lead construction assures minimum junction capacitance , The cross-over quad is a single barrrier ring quad where the leads are crossed-over within the diode package. The diodes used are four closely matched medium barrier Schottky diode chips. M/A-COM , available in five case styles which are compatible with microstrip assembly techniques. The 226 case style
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MA40435

Abstract: diode BY 226 BROAD BAND DESIGNS Single Barrier Ring Quads Each S chottky barrier diode quad consists of fou r , individual diode is in beam -lead form . The beam-lead construction assures m inim um junctio n capacitance , ith m icrostrip assem bly techniques. The 226 case style is herm etically sealed and should be used in , close to the physical size of the 226 case style. The sm aller case style, 227, is physically sm aller , Quads MA40430 MA40431 MA40432 MA40439 MA40433 MA40434 MA40437 MA40435 MA40436 MA40438 MA40284 226 227
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diode BY 226 MA40446

diode marking 226

Abstract: diode BY 226 Copyright © 2008 Unisonic Technologies Co., Ltd 1 of 4 QW-R502-226.A UT3418 Power MOSFET , Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V mâ"¦ A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55 4 5 22
Unisonic Technologies
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diode marking 226 UT3418L UT3418-AE3-R UT3418L-AE3-R QW-R502-226

diode marking 226

Abstract: diode BY 226 QW-R502-226.B UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25°, unless otherwise specified , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN 15 V m A 226 39 29 270 pF pF pF 2.6 3.2 14.5 2.1 3 1.4 0.55
Unisonic Technologies
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all diodes ratings UT3418G UT3418G-AE3-R

MA40483

Abstract: A4049 Styles Description Single Barrier Ring Quads Each Schottky barrier diode quad consists of four , stripline case styles which are compatible with microstrip assembly techniques. The 226 case style is her , 228 case style is a low-cost package of similar size to the 226 case style. Case style 227 is , current in mA. 4. All of these parts are available in case styles 226, 227, 228, 264, 963 and 1008. To , = 0V and f = 1 MHz. Cj is comprised of fhe capacitance of two diode junctions in series. 2. Rs is
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MA40483 A4049 A beam lead ring quad of four Schottky diodes

si1420

Abstract: 40446 sty les w hich are co m p atib le with m icrostrip asse m b ly tech n iqu es. T h e 226 c a se style , 226 c a se style. C a se style 227 is su g g e ste d for eith er high freq u en cy or w id e ban dw , is the forward current in mA. All of these parts are available in case styles 226, 227, 228, 264, 963 , VR = OV and f = 1 MHz. Cj is comprised of the capacitance of two diode junctions in series. 2. R s is the diode series resistance which is the dynamic resistance, RT, minus the junction resistance, Rj
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si1420 40446
Abstract: " 226" 26+ 2"6 2+6 2: 2I6! 6I 6: +6 6+ I6= =26 =" =: " ""6+ "I += +I6+ " : :6+ I !" 2" 22=6+ 2= 2" 2+26+ 2:6+ 2I! #& # 6I !6+ 26 226 26: 2=6I 2+6I 26! 2! 262 =6 +6= I6" !6+ =26: ="6I =I "2 " "!6+ +" +! , > Values + : = 2 Units 5 # D05 D05 @ ' < > 6 C Surface mount diode , + 6+ 6+ 6+ 6+ 6+ 6+ 6+ #B # $ J 6! J :6 J I6" J !62 J !6! J 226+ J 26 J 2=6: J 2+6 J 26: J 2I6 J 6 , 9B H3 #B # Surface mount diode Zener silicon diodes Z5 SMC 1 . Z5 SMC 200 Maximum Power SEMIKRON
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Abstract: Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.D UT3418 Ì Power MOSFET ABSOLU T E M AX I , nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 270 pF pF pF , QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/ s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN Unisonic Technologies
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diode BY 226

Abstract: MVAM2 characteristics by eliminating the point-contact diode presently used in many applications. Motorola has the , 250 2504 200s 200s 2006 2006 2007 2007 TV. 182.02 TO-92 226 MINI-L 182.03 TO-92 182.03 TO-92 182.02 TO-92 226 MINI-L 182.02 TO-92 226 MINI-L Pin Switching . designed for VHF band switching and , ) 3.0 3.0 3.0 6.0 3.0 ^ 3.0 ) 226 MINI-L 226 MINI-L 226 MINI-L 182-03 TO-92 226 MINI-L ^ 226 MINI-L , 1 Ct @Vr = 20 V, f - 100 MHz. Cases s s CASE 226 CASE 182 CASE 29-02 TO-92 6-4
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MVAM115 MVAM125 MBD101 MBD102 MBD301 MBD502 MVAM2 diode 226 MPN3401 MPN3403 mbd201 PN3404 MBD201
Abstract: www.unisonic.com.tw Copyright © 2009 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-226.E UT3418  Power , 101 1.8 60 70 155 V mâ"¦ mâ"¦ mâ"¦ A 226 39 29 270 pF pF pF 2.6 3.2 , DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/μs Body Diode Reverse , of 3 QW-R502-226.E UT3418  Power MOSFET TYPICAL CHARACTERISTICS 300 Drain Current Unisonic Technologies
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diode marking 226

Abstract: diode BY 226 Technologies Co., Ltd 1 of 3 QW-R502-226.D UT3418 Power MOSFET ABSOLUTE MAXIMUM RATINGS (Ta = 25 , UNIT 1 100 V µA nA 1.4 43 52 101 1.8 60 70 155 V m m m A 226 39 29 , Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=1A, VGS=0V Maximum Body-Diode Continuous Current IS Body Diode Reverse Recovery Time tRR IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD
Unisonic Technologies
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diode BY 226

Abstract: 1N4106 1N4106 Nom zener voltage:12.0V; low level zener diode low current: 250uA - low noise . Page 1 of , Thyristors Part Number: 1N4106 1N4106 Nom zener voltage:12.0V; low level zener diode low current , Products Search for Parts Request a Quote In Stock 443 Brand New Available from $ 2.26 Manufacturer , FAQs $ 2.26 $ 0.57 Company Testimonials Store Policies Contact Us Americanmicrosemi Total Price $ 2.26 Quantity to Order: 1 SHOP WITH CONFIDENCE All Parts are Brand New! 100% Secure
American Microsemiconductor
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Abstract: Designs MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad consists , that each individual diode is in beam lead form. The beam lead construction assures minimum junction , style. The available packages are 226, 227, 228 or 963. To order a beam lead part add "-906". Notes , . High speed switching, a necessary sampling requirement, is accom plished with the Schottky diode , enable the designer to select a diode with an appropriate barrier such that the RF sig nal input to the -
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MA4E400L MA4E400M MA4E400H
Abstract: · · · MA4E400 Series V3.00 Case Styles Description Each Schottky barrier diode quad , each individual diode is in beam lead form. The beam lead construction assures minimum junction , a low barrier bridge quad housed in the 228 case style. The available packages are 226, 227, 228 or , Package -6 5 °C to + 1 50 °C (Case Style 226) Beam Strength 2g (Case Style 906) 75 mW / junction Absolute , Schottky diode. Schottky diodes have switching sp eeds in the picosecond range. The four closely m atched -
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igbt sinewave inverter

Abstract: three phase bridge inverter in 180 degree and 120 qualified IGBT, Diode components, modules â'¢ Influence over IGBT, module roadmap â'¢ Ability to , 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248 0.87 239 0.77 226 , 1.571 1.745 1.920 2.094 sin scaled 255 0.87 239 0.77 226 0.64 210 0.50 192 0.34 172 , 106 0.00 128 0.17 150 0.34 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 , 172 0.50 192 0.64 210 0.77 226 0.87 239 0.94 248 0.98 254 1.00 256 0.98 254 0.94 248
Freescale Semiconductor
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igbt sinewave inverter three phase bridge inverter in 180 degree and 120 toyota Speed Sensor squirrel cage induction generator 140HP 110VAC

zener diode voltage list

Abstract: diode BY 226 1N4102 Nom zener voltage:8.7V; low level zener diode low current: 250uA - low noise 2. Page 1 of , Thyristors Part Number: 1N4102 1N4102 Nom zener voltage:8.7V; low level zener diode low current: 250uA , Products Search for Parts Request a Quote In Stock 388 Brand New Available from $ 2.26 Manufacturer , FAQs $ 2.26 $ 0.57 Company Testimonials Store Policies Contact Us Americanmicrosemi Total Price $ 2.26 Quantity to Order: 1 SHOP WITH CONFIDENCE All Parts are Brand New! 100% Secure
American Microsemiconductor
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zener diode voltage list

2SC1675L

Abstract: 2N2161 tg:~~ TO-39 TO-39 TO-92 TO-98var TO-236 TO-92 TO-226 TO-226 TO-226 TO-226 TO-18 TO-18 TO-5 TO-18 TO , -92var TO-92var TO-92var TO-92 TO-106 TO-92 TO-18 TO-18 TO-18 TO-226 TO-226 TO-98 TO-98 TO-5 TO-5 TO , 2N2159 Elec Trans Semitronics 2N2159A 2N2160 Semitronics TexslnstLtd Unitex 2N2161 2N2162 Inti Diode Semicoa 2N2163 Inti Diode Semicoa 2N2164 Inti Diode Semicoa 2N2165 Inti Diode Semicoa 2N2166 Inti Diode Semicoa 2N2167 IntI Diode Motorola SiliconTran CSR Indus SGS-Ates Solitron CSR Indus PPC Product RCA Corp
Space Power Electronics
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2SC1675L 2N2214 2N2196 TL3643 2n2222 to92 2sc1675-k 2N2222 2N2222A
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